CN100587953C - 光电装置的接垫结构及其制造方法 - Google Patents

光电装置的接垫结构及其制造方法 Download PDF

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CN100587953C
CN100587953C CN200710102320A CN200710102320A CN100587953C CN 100587953 C CN100587953 C CN 100587953C CN 200710102320 A CN200710102320 A CN 200710102320A CN 200710102320 A CN200710102320 A CN 200710102320A CN 100587953 C CN100587953 C CN 100587953C
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connection pad
electrooptical device
district
substrate
insulating barrier
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CN101221948A (zh
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王凯芝
刘芳昌
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VisEra Technologies Co Ltd
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VisEra Technologies Co Ltd
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Abstract

本发明涉及一种光电装置的接垫结构，其包括承载基板，承载基板具有接垫区及光电装置区。绝缘层设置于承载基板上且具有开口对应于接垫区。至少一接垫嵌入于开口下方的绝缘层中，以露出接垫的上表面。装置基板设置于绝缘层上且对应于光电装置区。上盖层覆盖装置基板及开口之外的绝缘层。导电缓冲层设置于开口中且与接垫直接接触。本发明还涉及该接垫结构的制造方法。

Description

光电装置的接垫结构及其制造方法
技术领域
本发明涉及一种光电装置，特别是涉及一种适用于光电装置的接垫结构。
背景技术
数字影像器件被广泛运用于诸如数字相机、数字影像记录器、具有影像拍摄功能的手机、以及监视器。而数字影像感测器通常包括光电装置芯片，例如电荷耦合器件(charge-coupled device，CCD)影像感测芯片及CMOS影像感测芯片。
上述影像感测芯片通常包括用于像素元件(picture element)的电极以及用于与外部电路电性连接的接垫(bonding pad)的金属结构。上述金属结构可通过已知的镶嵌工艺与镀金属(metallization)工艺形成。通常阻障层会在金属填入之前形成。即，阻障层形成于金属结构的底部表面及侧壁。然而，阻障层的原子可能会在制造装置所进行的热加工期间扩散至金属结构的底部表面及侧壁。
在背发光(back-illuminated)的影像感测器中，影像感测芯片包括微电子装置形成其上的装置基板，其反向组装在承载基板或是保护基板上。由于装置基板反向放置，故必须去除部份的装置基板，以露出用于后续接线(wiringbonding)加工中作为接垫的金属结构。然而，当装置基板反置于承载基板且局部去除以露出接垫时，接线会与具有扩散自阻障层的杂质的接垫表面接触，扩散的杂质会造成接线与接垫之间的附着力不佳。接线与接垫之间不佳的附着力将降低封装可靠度并导致装置失效。
因此，有必要寻求一种光电装置的接垫结构，其可强化接垫的附着力。
发明内容
有鉴于此，本发明的目的在于提供一种光电装置的接垫结构及其制造方法，以增加接线与接垫之间的附着力。
本发明提供一种光电装置的接垫结构，包括：承载基板、绝缘层、至少一接垫、装置基板、上盖层、以及导电缓冲层。承载基板具有接垫区及光电装置区。绝缘层设置于承载基板上且具有开口对应于接垫区。接垫嵌入于开口下方的绝缘层中，以露出接垫的上表面，该接垫由金属层及形成于其表面的阻碍层所构成。装置基板设置于绝缘层上且对应于光电装置区。上盖层覆盖装置基板及开口之外的绝缘层。导电缓冲层设置于开口中且与接垫直接接触。
本发明又提供一种光电装置的接垫结构制造方法。将光电装置反置于承载基板上，其中承载基板具有接垫区及光电装置区，且光电装置包括：装置基板、绝缘层、以及至少一接垫。绝缘层设置于承载基板与装置基板之间。至少一接垫，嵌入于绝缘层中且对应于接垫区，该接垫由金属层及形成于其表面的阻碍层所构成。去除对应于接垫区的装置基板。在对应于光电装置区的装置基板上及对应于接垫区的绝缘层上形成上盖层。依序蚀刻上盖层及其下方的绝缘层，以形成开口而露出接垫。在开口中形成导电缓冲层，以与接垫直接接触。
附图说明
图1A至1C为根据本发明实施例的用于背发光的光电装置接垫结构制造方法的剖面示意图；
图2A至2E为根据本发明另一实施例的用于背发光的光电装置接垫结构制造方法的剖面示意图；以及
图3A及3B为图1A或2A的接垫剖面放大图。
【主要部件符号说明】
10～接垫区；20～光电装置区；100～装置基板；101～接垫；101a～阻障层；101b～金属层；102、104、106、108～介电层；103、107～导电插塞；105、109～金属层；111～内连线；200～承载基板；202～上盖层；204～开口；206、208～导电缓冲层；210～接线。
具体实施方式
以下说明本发明实施例的制作与使用。然而，可轻易了解本发明所提供许多可应用的发明概念可实施于广泛多样化的特定背景。而特定的实施例仅用于说明以特定方法制作及使用本发明，并非用以局限本发明的范围。
本发明涉及一种光电装置的接垫结构及其制造方法。图1C为根据本发明实施例用于光电装置的接垫结构，例如用于背发光影像感测器的接垫结构。接垫结构包括承载基板200，例如硅基板，其具有接垫区10及光电装置区20。绝缘层，设置于承载基板200上，其具有开口204对应于接垫区10。在本实施例中，绝缘层可包括依序设置于承载基板100上的介电层108、106、104、及102。
接垫101，嵌入于开口204下方的介电层102中，以露出其上表面。再者，多层内连线111，可选择性地嵌入于接垫101下方的绝缘层中，其包括：分别嵌入于介电层104及106的金属层105及109、电性连接接垫101与金属层105的导电插塞103、以及电性连接金属层105及109的导电插塞107。
装置基板100，例如硅基板，设置于绝缘层上，且对应于光电装置区20。
图1A至1C为根据本发明实施例的用于背发光的光电装置接垫结构制造方法剖面示意图。请参照图1A，提供光电装置，例如背发光影像感测器。光电装置反向组装于承载基板200上。承载基板200具有接垫区10及光电装置区20。在本实施例中，承载基板200可由硅或其他半导体材料所构成。再者，光电装置可包括装置基板100，例如硅基板或其他半导体基板。装置基板100可具有不同元件，例如晶体管、电阻、及其他已知的半导体元件。装置基板100也可具有导电层、绝缘层或隔离结构。导电层通常为金属层，例如铜，常于半导体工业中使用于连接基板上或基板内分离的光电装置，例如影像感测器。为了简化图式，此处仅表示出平整基板。绝缘层，设置于装置基板100上。在本实施例中，绝缘层包括依序形成于装置基板100上的介电层102、104、106、及108。介电层102可由氧化硅或其他低介电常数(low k)材料所构成，，例如氟硅玻璃(FSG)、掺杂碳的氧化物、甲基硅酸盐类(MSQ)、含氢硅酸盐类(HSQ)、或氟四乙基硅酸盐(fluorine tetra-ethyl-orthosilicate，FTEOS)，且作为层间介电(interlay dielectric，ILD)层。其他的介电层104、106、及108可由相同或类似于介电层102的材料所构成，且作为金属层间介电(inter-metaldielectric，IMD)层。接垫101，形成于介电层102中。再者，多层内连线111，形成于接垫101下方，其包括：分别形成于介电层104及106的金属层105及109、电性连接接垫101与金属层105的导电插塞103、以及电性连接金属层105及109的导电插塞107。在本实施例中，接垫101可仅由金属层101b所构成，例如铜或铝，其表面没有形成阻障层，如图3A所示。
请参照图1B，通过已知蚀刻工艺去除对应于接垫区10的装置基板100，以露出ILD层102。接着，蚀刻露出的ILD层102，以在其中形成开口204并露出接垫101，如图1C所示。如此一来，本发明的接垫结构即完成。之后，可通过已知接线加工方法将接线210直接形成在接垫101上。
根据本实施例的接垫结构，由于接垫上并没有形成阻障层，因此可避免阻障层所产生的扩散问题，进而防止接垫101与接线210之间的附着力变差。因此，封装可靠度得以增加。
图2E为根据本发明另一实施例的光电装置接垫结构，其中与图1C中相同的部件使用相同的标号并省略其说明。上盖层202覆盖装置基板100以及开口204以外的介电层102。
导电缓冲层208顺应性设置于开口204的底部及侧壁，以与露出的接垫101直接接触，用以电性连接接线210与接垫101。在本实施例中，导电缓冲层208可由金属所构成，例如铜、铝、金，或是由导电胶构成，例如金胶或银胶，其用于提供接触面，以取代与接线接触的接垫102。
图2A至2E为根据本发明另一实施例的用于光电装置接垫结构制造方法剖面示意图，其中与图1A至1C中相同的部件使用相同的标号并省略其说明。请参照图2A，提供光电装置，例如背发光影像感测器。光电装置反向组装于承载基板200上。不同于图1A至1C的实施例，接垫101可由金属层101b以及形成于其表面的阻障层101a所构成，如图3B所示。同样地，接垫101也可只由表面没有形成阻障层的金属层101b所构成，如图3A所示。
请参照图2B，通过已知蚀刻加工去除对应于接垫区10的装置基板100，以露出ILD层102。接着，通过已知沉积技术，例如化学气相沉积(CVD)，在装置基板100上以及露出的介电层102上形成上盖层202。在本实施例中，上盖层202可由绝缘层所构成，例如氧化物或抗反射材料。
请参照图2C，依序蚀刻对应于接垫区10的上盖层202及ILD层102，以在其中形成开口204而露出接垫101。
请参照图2D，在上盖层202上以及开口204的底部及侧壁顺应性形成导电缓冲层206，以与露出的接垫101直接接触。在本实施例中，导电缓冲层206可由金属所构成，例如铜、铝、或金，且可通过溅镀、CVD、或其他沉积技术形成。在其他实施例中，导电缓冲层206可由导电胶所构成，例如金胶或银胶，并通过涂布法形成。
请参照图2E，图案化导电缓冲层206，以在开口204的底部表面及侧壁留下一部份的导电缓冲层208，其局部延伸至对应于接垫区10的上盖层202上表面。如此一来，本发明的接垫结构即完成。之后，可通过已知接线加工方法将接线210直接形成于接垫101上。
根据本实施例的接垫结构，接线210与接垫101之间的附着力得以通过设置于其间的额外的导电层而增加，进而提升封装可靠度。
虽然本发明已以较佳实施例公布如上，但并非用以限定本发明，任何本领域技术人员，在不脱离本发明的精神和范围内，当可作更动与修饰，因此本发明保护范围当视后附的申请专利范围所界定者为准。

Claims (6)

1.一种光电装置的接垫结构，包括：
承载基板，具有接垫区及光电装置区；
绝缘层，设置于该承载基板上且具有开口对应于该接垫区；
至少一接垫，嵌入于该开口下方的该绝缘层中，以露出该接垫的上表面，该接垫由金属层及形成于其表面的阻障层所构成；
装置基板，设置于该绝缘层上且对应于该光电装置区；
上盖层，覆盖该装置基板及该开口之外的该绝缘层；以及
导电缓冲层，设置于该开口中且与该接垫直接接触。
2.如权利要求1所述的光电装置的接垫结构，其特征在于该导电缓冲层由金属或导电胶所构成。
3.如权利要求1所述的光电装置的接垫结构，其特征在于该光电装置还包括多层内连线，设置于该接垫下方的该绝缘层中，且与该接垫电性连接。
4.一种光电装置的接垫结构制造方法，包括：
将光电装置反置于承载基板上，其中该承载基板具有接垫区及光电装置区且该光电装置包括：
装置基板；
绝缘层，设置于该承载基板与该装置基板之间；以及
至少一接垫，嵌入于该绝缘层中且对应于该接垫区，该接垫由金属层及形成于其表面的阻障层所构成；
去除对应于该接垫区的该装置基板；
在对应于该光电装置区的该装置基板上及对应于该接垫区的该绝缘层上形成上盖层；
依序蚀刻该上盖层及其下方的该绝缘层，以形成开口而露出该接垫；以及
在该开口中形成导电缓冲层，以与该接垫直接接触。
5.如权利要求4所述光电装置接垫结构制造方法，其特征在于该导电缓冲层由金属或导电胶所构成。
6.如权利要求4所述的光电装置接垫结构制造方法，其特征在于该光电装置还包括多层内连线，设置于该接垫下方的该绝缘层中，且与该接垫电性连接。
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