CN100587951C - 包括集成电路和电容元件的电子设备 - Google Patents

包括集成电路和电容元件的电子设备 Download PDF

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CN100587951C
CN100587951C CN200580024482A CN200580024482A CN100587951C CN 100587951 C CN100587951 C CN 100587951C CN 200580024482 A CN200580024482 A CN 200580024482A CN 200580024482 A CN200580024482 A CN 200580024482A CN 100587951 C CN100587951 C CN 100587951C
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CN1989615A (zh
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J·范拉默伦
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Sheng Investment Co Ltd
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Abstract

一种电子设备(ICD)，包括集成电路(AIC)和电容元件(PIC)。集成电路(AIC)提供多个电路接触对(CI)。电容元件(PIC)提供多个电容接触对(CC)。电容存在于至少部分电容接触对(CC)中的每一个之间。多个电容接触对(CC)面对多个电路接触对(CI)。至少部分电容接触对(CC)与至少部分电路接触对(CI)以对到对的方式电气耦合连接。

Description

包括集成电路和电容元件的电子设备
技术领域
本发明的一个方面涉及一种包括集成电路和电容元件的电子设备。该电子设备可以构成例如具有模拟和数字信号处理电路的信号处理器。本发明的另一方面涉及一种制造这种电子设备的方法，一种包括这种电子设备，集成电路和电容元件等的信号处理装置。
背景技术
集成电路可能需求一个或多个所谓的去耦电容，例如用于数字集成电路中的电源电压去耦。去耦电容防止可能引起集成电路故障的相对强的寄生信号的出现。去耦电容具有例如与集成电路的电容相类似的形式，一般为平面。由F.Roozeboom等在微电路和电子封装国际期刊(International Journal Microcircuits and Electronic Packaging)24(3)(2001)pp.182-196中公开的文章“High density，Low-Loss MOS capacitors forIntegrated RF Decoupling”，描述了一种去耦电容。该去耦电容由以6-英寸大孔硅晶片制造的高密度MOS电容形成。
此外，US-A 6,222,260披露了具有数字电路的集成电路与去耦合电容器的结合，其配置中去耦电容器面对该集成电路。
发明内容
根据本发明的一个方面，电子设备包括：集成电路，提供多个电路接触对；和电容元件，提供多个电容接触对，去耦电容存在于至少部分电容接触对中的每一个之间，多个电容接触对面对多个电路接触对，至少部分电容接触对与至少部分电路接触对以对到对的方式电气耦合连接，其中，集成电路包括与模拟电路分离的逻辑电路，并且该电路接触对仅与该逻辑电路连接；其中，所述电容接触对基本均匀地分布在电容元件的表面区域上，形成输入和输出的棋盘图形；并且其中，至少部分电容接触对中每一个电容接触对之间的去耦电容由深槽电容器形成。
根据本发明的另一方面，一种信号处理装置，包括上述电子设备，和将电子设备耦合连接到信号处理装置的其它部件的衬底。
根据本发明的又一方面，一种制造以如下为基础的电子设备的方法：集成电路，具有多个电路接触对，集成电路包括与模拟电路分离的逻辑电路，并且该电路接触对仅与该逻辑电路连接；和电容元件，提供多个电容接触对，去耦电容存在于至少部分电容接触对的每一个电容接触对之间，其中，所述电容接触对基本均匀地分布在电容元件的表面区域上，形成输入和输出的棋盘图形；并且其中，至少部分电容接触对中每一个电容接触对之间的去耦电容由深槽电容器形成，所述方法包括：制造步骤，其中彼此分离地制造集成电路和电容元件；定位步骤，其中将该多个电容接触对形成来面向所述多个电路接触对；和耦合连接步骤，其中将至少部分电容接触对与至少部分电路接触对以对到对的方式电气耦合连接。
根据本发明的又一方面，一种电容元件，提供多个电容接触对，集成电路包括与模拟电路分离的逻辑电路，集成电路提供多个电路接触对并且电路接触对仅与该逻辑电路连接，去耦电容存在于至少部分电容接触对的每一个电容接触对之间，将电容接触对配置为与集成电路的电路接触对以对到对的方式电气耦合连接，其中，所述电容接触对基本均匀地分布在电容元件的表面区域上，形成输入和输出的棋盘图形。
根据本发明的又一方面，一种集成电路，提供多个电路接触对，集成电路包括与模拟电路分离的逻辑电路，集成电路提供多个电路接触对并且该电路接触对仅与该逻辑电路连接，将电路接触对配置为与电容元件的电容接触对以对到对的方式电气耦合连接，其中，所述电容接触对基本均匀地分布在电容元件的表面区域上，形成输入和输出的棋盘图形，并且其中，去耦电容存在于至少部分电容接触对的每一个电容接触对之间。
本发明考虑了以下几个方面。集成电路一般包括相对多的子电路，例如逻辑门、驱动器或放大器等。每一个子电路占据集成电路内的不同位置。子电路的高频性能取决于将子电路耦合连接到去耦电容的电气路径。该电气路径的阻抗越低，于电路的高频性能会越好。如果电气路径相对短或者如果电气路径相对宽或者如果电气路径又短又宽，那么电气路径具有相对低的阻抗。对于距离去耦电容相对近的子电路，电气路径相对短。但是，也可以存在一个或多个距离去耦电容相对远的子电路。对于这些子电路，电气路径可以做得相对宽以便具有足够低的阻抗。然而，相对宽的电气路径需要可观数量的表面区域，这在集成电路中不总是可得到的，并且成本也相对较高。
根据以上描述的本发明的一个方面，集成电路具有各种面对电容接触对的电路接触对，电容存在于电容接触对之间。电路接触对与电容接触对以对到对为基础电气耦合连接。因此，在电容元件中的各个电容分别在小区域中与集成电路耦合连接，因此，集成电路中存在相对多的与电容相对近的子电路，这可用于去耦的目的。这样，对于将子电路耦合连接到去耦电容的电气路径，使其具有相对适度的平均长度是可能的。这使得集成电路具有令人满意的高频特性。优选采用焊接连接尤其优选采用焊接凸点来建立耦合连接。作为焊接材料，可以采用由铅基或锡基的常用焊料制成，但是也可以采用例如金、铜等金属制成。特别是，采用包括在锡或铟合金的基础上并提供在铜、镍等的凸点下镀金属的浸没焊接层的凸点，可以获得较好的结果。这种凸点可提供很高的间距，高达不小于10微米。由于电容元件和集成电路采用具有至少可比的热膨胀系数的半导体衬底，所以在电容元件和集成电路之间的距离会比较小不是问题。
在一特定实施例中，集成电路包括模拟电路、存储器和逻辑电路，并且电容只与逻辑电路耦合连接。优选的是，电容元件覆盖逻辑电路的整个区域。
在适当的实施例中，如在上述提到的文章中所披露的，采用深槽电容器制成。深槽电容器具有很小的表面区域。另外，发现可以将接合垫直接提供在电容器上方。因此可以提供用于连接到集成电路的很密排列的凸点。为了提供低欧姆连接和耦合，为集成电路提供从垂直投影来看与晶体管基本上重叠的接触垫。这种布局本质上被称作“有源区上接合垫(bond pads on active)”布局。尽管对凸点的粘附没有明确地要求，在此优选接合垫存在于集成电路的钝化层的上方。
在大多数适当的实施例中，电容接触对基本上均匀的分布在电容元件的表面区域。因此，通过最有效的分布和深槽电容器的使用，形成的结构具有输入和输出的棋盘图形。一般来讲，输入是信号垫(Vss)，而输出是接地垫(Vdd)。可以理解，在集成电路和电容元件之间的凸点将具有相同的图形。在这种布局中，凸点的排列具有同轴结构，同轴结构是一种类型的传输线并具有很低的寄生阻抗。
优选的是，在与集成电路分离的电容元件中提供仅仅去耦电容的一部分。适当的是，电容的30-60％，优选大约50％存在于电容元件中。
可以采用各种方式与集成电路结合提供电容元件：作为分离元件或者作为载体或另一设备的一部分。
在第一实施方式中，电容元件具有比集成电路的表面区域小的表面区域。然后在以常规方式封装电子设备之前，将电容元件置于集成电路的上方。在该实施方式中，逻辑电路的形状尽可能为矩形，并且如果存在任何其它电路，例如模拟电路和存储器，则其应设计在另一区域中，这些电路可以减少逻辑电路的有效填充因素，从而使又大又更昂贵的电容元件成为必要。不同类型的电路的分离需要常规的数字集成电路的设计的改进。
在一可替换实施方式中，电容元件形成插入器的一部分，并且可以是用于集成电路的载体。该载体横向延伸出集成电路并进一步包括例如电阻器、互连等功能是合适的。在这种情况下，电容和各个连接最好仍然限于逻辑电路的区域。
在进一步的实施例中，在分离芯片中不仅存在电容元件，而且还存在存储器。在节约存储器的成本来看和采用层叠管芯配置来看，具有将存储器电路与逻辑电路分离并且将其置入分离的设备中的倾向，其后将所述设备与逻辑电路组装。由于深槽电容器适合用于存储器中，因此存储器能与去耦电容集成入一个设备中。
本发明的另一个优点涉及以下方面。根据本发明，可以在组装前分离地制造根据本发明的电子设备的集成电路和电容元件。因此，对于集成电路，可以采用成本高效的技术制造集成电路，对于电容元件，可以采用成本高效的不同技术制造电容元件。例如，可以采用标准技术制造集成电路，而根据在上文中引证的文章所描述的技术来制造电容元件，与采用相对复杂的技术来制造包括去耦电容的集成电路的方法相比，该方法更加成本高效。由于这些原因，本发明实现了成本高效。
本发明的这些和其它方面将在以下结合附图进行更详细的描述。
附图说明
图1是图解说明电视接收机的方框图。
图2是图解说明电视接收机的集成电路设备的截面图。
图3是图解说明集成电路设备的有源集成电路的俯视图。
图4是图解说明可替换有源集成电路的俯视图。
图5是图解说明集成电路设备的无源集成电路的截面图。
具体实施例
图1图解说明了电视接收机TV。电视接收机TV包括接收器REC和显示设备DPL。接收器REC包括印刷电路板PCB，在该印刷电路板PCB上安装集成电路设备ICD和其它部件。集成电路设备ICD形成从射频输入信号RF得到视频信号VID的信号处理链的一部分。显示设备DPL显示视频信号VID。
图2图解说明了集成电路设备ICD。图2是集成电路设备ICD的截面图。该集成电路设备ICD包括安装在引线框LFR上的有源集成电路AIC和无源集成电路PIC。模塑化合物(Mold compound)MLD覆盖有源集成电路AIC和无源集成电路PIC以便提供机械保护。引线框LFR包括管芯(die)垫DPD，无源集成电路PIC安装在该管芯垫DPD上。引线框LFR还包括各种电引线LD，用来将集成电路设备ICD与其它部件电气耦合连接。信号接地引线LD1和电源电压引线LD2分别将集成电路设备ICD耦合连接到信号地GND和电源电压VCC。
有源集成电路AIC包括逻辑电路LGC、存储器电路MEM、电源电压垫VP、信号地垫GP和耦合连接到信号地垫GP的导电屏蔽SHD。焊接连接SC1将信号地垫GP电气耦合连接到引线框LFR的信号地引线LD1。另一个焊接连接SC2将电源电压垫VP电气耦合连接到引线框LFR的电源电压引线LD2。因此，逻辑电路LGC和存储器电路MEM可以通过例如存在于图1所示的印刷电路板PCB上的电源电压线来接收来自外部源的电源电压VCC。可以将逻辑电路LGC配置来处理例如数字电视信号。为此，逻辑电路LGC可以与存储器电路MEM合作.例如，将数字电视信号的采样暂时存储在存储器电路MEM中。
有源集成电路AI C包括多个电路接触对CI1，...，CI5，多个电路接触对CI1，...，CI5占据了有源集成电路AIC的表面区域Slgc。当沿着表面区域Slgc的方向观察有源集成电路AIC时，逻辑电路LGC位于表面区域Slgc的下方从而位于电路接触对CI的下方。电路接触对CI与逻辑电路LGC电气耦合连接。例如，可以将每个电路接触对CI与形成部分逻辑电路LGC的不同的子电路耦合连接。作为优选，电路接触对CI和与其耦合连接的子电路物理接近。所描述的电路接触对CI具有由黑色方框表示的电路接触、由白色方框表示的其它电路接触。可以将黑色方框的电路接触对CI耦合连接到例如子电路的信号地路径。可以将白色方框的电路接触对CI耦合连接到相同的子电路的电源电压路径。
无源集成电路PIC包括多个电容接触对CC1，...，CC5，多个电容接触对CC1，...，CC5占据了无源集成电路PIC的表面区域Scap。电容接触对CC面对电路接触对CI。凸点(Bump)连接BU以对到对的方式将电容接触对CC电气耦合连接到电路接触对CI。电容存在于每个电容接触对CC之间。存在于电容接触对CC之间的电容也存在于与该电容接触对电气耦合连接的电路接触对CI之间。这样，电容可以形成用于与该电路接触对CI耦合连接的子电路的去耦电容。例如，电容可以构成在与子电路有关的电源电压路径和信号地路径之间的去耦电容。因此，子电路可以具有其自身的去耦电容并且去耦电容可以相对紧密。
图3图解说明了有源集成电路AIC。图3是有源集成电路AIC的俯视图。图3中的横截面线A-B表示图2所示的截面示图的位置。图3表示形成部分有源集成电路AIC的电源电压垫VP、信号地垫GP、存储器电路MEM和逻辑电路LGC。图3进一步图解说明了有源集成电路AIC包括模拟电路ANA。模拟电路ANA可以包括例如模数转换器以便将模拟视频信号转换为数字视频信号。有源集成电路AIC内的每个电路占据不同的区域。
图3图解说明了有源集成电路AIC包含除了图2所示的电路接触对CI之外的其它电路接触对CI。电路接触对CI几乎存在于逻辑电路LGC占据的整个区域上。也就是说，电路接触对CI占据的表面区域Slgc与逻辑电路LGC在有源集成电路AIC内占据的区域一致。图3还图解说明了电路接触对CI占据的表面区域Slgc基本上具有矩形形状。因此，图2所示的电容接触对CC占据的无源集成电路PIC的表面区域Scap也基本上具有矩形形状并且具有相同的尺寸。这样，无源集成电路PIC在长度和宽度方面的尺寸基本上与电路接触对CI占据的表面区域Slgc相应。这是成本高效的。
图4图解说明了需要相对较大的无源集成电路的可替换的有源集成电路AIC′，其是次成本高效的。可替换有源集成电路AIC′包括可替换逻辑电路LGC′、两个可替换存储器电路MEM1′、MEM2′、可替换模拟电路ANA′和占据表面区域Slgc′的多个电路接触对CI′。电路接触对CI占据的表面区域Slgc′基本上与可替换逻辑电路LGC′占据的区域一致。
图4图解说明了能覆盖电路接触对CI′占据的表面区域Slgc′的最小可能的矩形SRCT。矩形无源集成电路在长度和宽度方面至少需要具有最小可能矩形SRCT的尺寸。假设该矩形无源集成电路PIC具有基本上充满电容接触对的主要表面。只有相对较小的比例可以与电路接触对CI′电气耦合连接。实际上，不能有效地使用面对两个可替换存储电路MEM1′、MEM2′和可替换模拟电路ANA′的矩形无源集成电路的表面区域。因此，图3所示的电路接触对CI占据的表面区域Slgc具有基本上矩形形状的有利的。需要耦合连接的电路也具有基本上矩形形状并基本上与电路接触对占据相同的区域是更有利的。这允许无源集成电路的电容通过相对较短的电气路径被耦合连接到有源集成电路的子电路，其导致令人满意的高频性能。
图5图解说明了无源集成电路PIC。图5是无源集成电路PIC的一部分的截面图。图5表示在表面区域Scap的电容接触对CC，其表面区域也如图2所示。无源集成电路PIC包括一对电极ELI、ELO，在电极ELI、ELO之间存在介电材料DLC。内电极ELI与以黑色方框表示的电容接触电气耦合连接。外电极ELO与以白色方框表示的电容接触电气耦合连接。该电极对ELI、ELO基本上与电容接触对CC占据的表面区域Scap垂直。因此，可以获得相对高的每单位表面区域电容。相对小的表面区域足够获得相对大的电容，其一般用于去耦的目的而被要求。例如，可以采用上文中所引证的文章中所描述的技术来制造图5所示的无源集成电路PIC。
可以采用各种不同的方式来制造图2所示的集成电路设备ICD。例如，可以根据传统的技术来制造有源集成电路AIC，而无源集成电路可以采用专门技术来单独制造，例如，采用上文引证的文章中描述的技术。可以将无源集成电路PIC固定到引线框LFR的管芯垫DPD。随后，定位有源集成电路AIC以便电路接触对CI面对无源集成电路PIC的电容接触对CC。接下来，将有源集成电路AIC固定到无源集成电路PIC和引线框LFR。例如，这可以通过将存在于电路接触对CI、信号地垫GP和电源电压垫VP上的焊接球加热来实现。存在于电路接触对CI上的焊接球将回流从而形成图2所示的凸点连接BU。
根据可替换的方法，首先将无源集成电路PIC固定到有源集成电路AIC，以便获得集成电路组件，在该集成电路组件中，电容接触对CC面对电路接触对CI。电容接触对CC和对电路接触对CI在对到对的基础上彼此电气耦合连接。随后，将集成电路组件安装在引线框LFR上。
以上参考附图的详细描述阐明了以下特征。电子设备(ICD)包括集成电路(有源集成电路AIC)和电容元件(无源集成PIC)。集成电路(AIC)提供多个电路接触对(CI)。电容元件(PIC)提供多个电容接触对(CC)。电容存在于至少部分电容接触对(CC)中的每一个之间。多个电容接触对(CC)面对多个电路接触对(CI)。至少部分电容接触对(CC)与至少部分电路接触对(CI)以对到对的方式电气耦合连接。这使得集成电路具有令人满意的高频性能。
以上的详细描述阐明了以下可选特征。电容接触对(CC)基本上均匀地分布在电容元件(PIC)的表面区域(Scap)上。这进一步导致令人满意的高频性能。
以上的详细描述阐明了以下可选特征。电路接触对(CI)占据集成电路(AIC)的表面区域(Slgc)。该表面区域(Slgc)具有基本上为矩形的形状。这使得成本高效。
以上的详细描述阐明了以下可选特征。电容元件(PIC)包括一对构成电容接触对(CC)之间的电容的电极(ELI，ELO)。该对电极(ELI，ELO)基本上与电容接触对(CC)占据的表面区域(Scap)垂直。这使得电容元件具有相对大的每单位表面电容，其进一步导致令人满意的高频性能。
可以采用不同的方式实现以上描述的特征。为了阐明这一点，简单表示一些可替换方式。将每个电路接触对与每个电容接触对耦合连接不是绝对必要的。例如，参考图2，假设电路接触对CI5未与电容接触对CC5电气耦合连接。该集成电路设备ICD仍然具有令人满意的高频性能。参考图2，尽管一般来讲导电屏蔽SHD将导致令人满意的高频性能，但是为了降低成本，可以省略导电屏蔽SHD。参考图2，尽管根据倒装法(flipchip)可以将有源集成电路AIC安装到引线框LFR上，这导致了令人满意的高频性能，但是，可以采用例如引线接合法(wirebonding)等不同的安装技术。还应该注意到，可以将根据本发明的电子设备应用于任何类型的信号处理装置中。图1所示的电视接收机只是一个举例。可以将该电子设备应用于例如用来处理高速数据的计算机或数字信号处理器中。
可以采用硬件或软件或者二者等多种方式来实现本发明的功能。在这方面，附图是很概略的，每一个附图仅表示本发明的一种可能的实施方式。这样，尽管附图将不同的功能表示为不同的方框，这里绝不排除单一硬件或软件实现几种功能。其也不排除硬件组件或软件组件或两者实现一种功能。
以上所作的描述参考附图说明了具体细节，而上述描述并不限制本发明。多种替换方式均落入附后的权利要求的范围内。权利要求中的附图标记不构成对权利要求的限制。单词″包括″不排除除权利要求中所列的元件或步骤之外的元件或步骤的存在。在元件或步骤之前的单词″一″不排除多个这种元件或步骤的存在。

Claims (7)

1.一种电子设备，包括：
集成电路，提供多个电路接触对；和
电容元件，提供多个电容接触对，去耦电容存在于至少部分电容接触对中的每一个之间，多个电容接触对面对多个电路接触对，至少部分电容接触对与至少部分电路接触对以对到对的方式电气耦合连接，
其中，集成电路包括与模拟电路分离的逻辑电路，并且该电路接触对仅与该逻辑电路连接；
其中，所述电容接触对基本均匀地分布在电容元件的表面区域上，形成输入和输出的棋盘图形；并且
其中，至少部分电容接触对中每一个电容接触对之间的去耦电容由深槽电容器形成。
2.根据权利要求1所述的电子设备，其中，电路接触对占据集成电路的基本矩形的形状的表面区域。
3.根据权利要求1所述的电子设备，其中，电容元件包括一对构成电容接触对之间的电容的电极，该对电极基本上与电容接触对占据的表面区域垂直。
4.根据权利要求1所述的电子设备，其中，电容元件是还包括与集成电路中的逻辑电路合作的存储器电路的设备的一部分。
5.根据权利要求1所述的电子设备，其中，电容元件是用作用于集成电路的载体的插入设备的一部分，并提供用于与外部电路板耦合连接的接触垫。
6.一种信号处理装置，包括权利要求1所述的电子设备，和将电子设备耦合连接到信号处理装置的其它部件的衬底。
7.一种制造以如下为基础的电子设备的方法：
集成电路，具有多个电路接触对，集成电路包括与模拟电路分离的逻辑电路，并且该电路接触对仅与该逻辑电路连接；和
电容元件，提供多个电容接触对，去耦电容存在于至少部分电容接触对的每一个电容接触对之间，
其中，所述电容接触对基本均匀地分布在电容元件的表面区域上，形成输入和输出的棋盘图形；并且
其中，至少部分电容接触对中每一个电容接触对之间的去耦电容由深槽电容器形成，
所述方法包括：
制造步骤，其中彼此分离地制造集成电路和电容元件；
定位步骤，其中将该多个电容接触对形成来面向所述多个电路接触对；和
耦合连接步骤，其中将至少部分电容接触对与至少部分电路接触对以对到对的方式电气耦合连接。
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