CN100568543C - 肖特基型室温核辐射探测器的制备方法 - Google Patents
肖特基型室温核辐射探测器的制备方法 Download PDFInfo
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- CN100568543C CN100568543C CNB2008100198356A CN200810019835A CN100568543C CN 100568543 C CN100568543 C CN 100568543C CN B2008100198356 A CNB2008100198356 A CN B2008100198356A CN 200810019835 A CN200810019835 A CN 200810019835A CN 100568543 C CN100568543 C CN 100568543C
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- 230000005855 radiation Effects 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
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- 239000013078 crystal Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
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- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 9
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CNB2008100198356A CN100568543C (zh) | 2008-03-18 | 2008-03-18 | 肖特基型室温核辐射探测器的制备方法 |
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CNB2008100198356A CN100568543C (zh) | 2008-03-18 | 2008-03-18 | 肖特基型室温核辐射探测器的制备方法 |
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CN101241948A CN101241948A (zh) | 2008-08-13 |
CN100568543C true CN100568543C (zh) | 2009-12-09 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102064229A (zh) * | 2010-09-14 | 2011-05-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种高阻GaN室温核探测器及其制备方法 |
CN103605150B (zh) * | 2013-10-26 | 2016-08-17 | 河北工业大学 | 一种肖特基型中子探测器及其制作方法 |
CN112867197B (zh) * | 2019-11-12 | 2023-04-11 | 杭州新叶光电工程技术有限公司 | 一种耐辐射led灯 |
CN114203329A (zh) * | 2021-12-13 | 2022-03-18 | 中国核动力研究设计院 | GaN基肖特基二极管、β核电池及其制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010034116A1 (en) * | 2000-03-22 | 2001-10-25 | Lg Electronics Inc. | Semiconductor device with schottky contact and method for forming the same |
CN1681134A (zh) * | 2004-04-07 | 2005-10-12 | 中国科学院半导体研究所 | 氮化镓基肖特基结构紫外探测器及制作方法 |
CN1744326A (zh) * | 2004-09-01 | 2006-03-08 | 住友电气工业株式会社 | 外延基底和半导体元件 |
CN1996556A (zh) * | 2006-12-01 | 2007-07-11 | 北京大学 | 一种制备氮化镓单晶衬底的方法 |
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- 2008-03-18 CN CNB2008100198356A patent/CN100568543C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010034116A1 (en) * | 2000-03-22 | 2001-10-25 | Lg Electronics Inc. | Semiconductor device with schottky contact and method for forming the same |
CN1681134A (zh) * | 2004-04-07 | 2005-10-12 | 中国科学院半导体研究所 | 氮化镓基肖特基结构紫外探测器及制作方法 |
CN1744326A (zh) * | 2004-09-01 | 2006-03-08 | 住友电气工业株式会社 | 外延基底和半导体元件 |
CN1996556A (zh) * | 2006-12-01 | 2007-07-11 | 北京大学 | 一种制备氮化镓单晶衬底的方法 |
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