CN100568531C - 半导体结构及其制造方法 - Google Patents
半导体结构及其制造方法 Download PDFInfo
- Publication number
- CN100568531C CN100568531C CNB2007101499549A CN200710149954A CN100568531C CN 100568531 C CN100568531 C CN 100568531C CN B2007101499549 A CNB2007101499549 A CN B2007101499549A CN 200710149954 A CN200710149954 A CN 200710149954A CN 100568531 C CN100568531 C CN 100568531C
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- CN
- China
- Prior art keywords
- layer
- semiconductor
- semiconductor structure
- inversion
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 179
- 238000000034 method Methods 0.000 title claims description 74
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 38
- 230000005669 field effect Effects 0.000 claims description 26
- 239000003795 chemical substances by application Substances 0.000 claims description 16
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 238000005530 etching Methods 0.000 description 68
- 239000000463 material Substances 0.000 description 56
- 150000002500 ions Chemical class 0.000 description 43
- 239000003989 dielectric material Substances 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 15
- 239000000203 mixture Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000003631 wet chemical etching Methods 0.000 description 6
- 230000002708 enhancing effect Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 4
- 238000007385 chemical modification Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 240000001439 Opuntia Species 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/538,174 US7485510B2 (en) | 2006-10-03 | 2006-10-03 | Field effect device including inverted V shaped channel region and method for fabrication thereof |
US11/538,174 | 2006-10-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101159288A CN101159288A (zh) | 2008-04-09 |
CN100568531C true CN100568531C (zh) | 2009-12-09 |
Family
ID=39260273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101499549A Expired - Fee Related CN100568531C (zh) | 2006-10-03 | 2007-10-08 | 半导体结构及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7485510B2 (zh) |
CN (1) | CN100568531C (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008526041A (ja) * | 2004-12-28 | 2008-07-17 | エヌエックスピー ビー ヴィ | 半導体デバイスの製造方法およびこの方法で製造される半導体デバイス |
US8426300B2 (en) | 2010-12-02 | 2013-04-23 | International Business Machines Corporation | Self-aligned contact for replacement gate devices |
US9304703B1 (en) | 2015-04-15 | 2016-04-05 | Symbolic Io Corporation | Method and apparatus for dense hyper IO digital retention |
US10133636B2 (en) | 2013-03-12 | 2018-11-20 | Formulus Black Corporation | Data storage and retrieval mediation system and methods for using same |
US9817728B2 (en) | 2013-02-01 | 2017-11-14 | Symbolic Io Corporation | Fast system state cloning |
DE102013105705B4 (de) * | 2013-03-13 | 2020-03-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Halbleitervorrichtung und dessen Herstellung |
US10061514B2 (en) | 2015-04-15 | 2018-08-28 | Formulus Black Corporation | Method and apparatus for dense hyper IO digital retention |
USD742876S1 (en) * | 2015-07-27 | 2015-11-10 | Symbolic Io Corporation | Rack equipment handle |
WO2019126072A1 (en) | 2017-12-18 | 2019-06-27 | Formulus Black Corporation | Random access memory (ram)-based computer systems, devices, and methods |
US10580903B2 (en) | 2018-03-13 | 2020-03-03 | Psemi Corporation | Semiconductor-on-insulator transistor with improved breakdown characteristics |
US20190288006A1 (en) * | 2018-03-13 | 2019-09-19 | Psemi Corporation | Backside Charge Control for FET Integrated Circuits |
US10672806B2 (en) | 2018-07-19 | 2020-06-02 | Psemi Corporation | High-Q integrated circuit inductor structure and methods |
US10658386B2 (en) | 2018-07-19 | 2020-05-19 | Psemi Corporation | Thermal extraction of single layer transfer integrated circuits |
US10573674B2 (en) | 2018-07-19 | 2020-02-25 | Psemi Corporation | SLT integrated circuit capacitor structure and methods |
US20200043946A1 (en) | 2018-07-31 | 2020-02-06 | Psemi Corporation | Low Parasitic Capacitance RF Transistors |
WO2020142431A1 (en) | 2019-01-02 | 2020-07-09 | Formulus Black Corporation | Systems and methods for memory failure prevention, management, and mitigation |
US10777636B1 (en) | 2019-06-12 | 2020-09-15 | Psemi Corporation | High density IC capacitor structure |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5250454A (en) | 1992-12-10 | 1993-10-05 | Allied Signal Inc. | Method for forming thickened source/drain contact regions for field effect transistors |
US5736435A (en) * | 1995-07-03 | 1998-04-07 | Motorola, Inc. | Process for fabricating a fully self-aligned soi mosfet |
US6117712A (en) | 1998-03-13 | 2000-09-12 | Texas Instruments - Acer Incorporated | Method of forming ultra-short channel and elevated S/D MOSFETS with a metal gate on SOI substrate |
US6207530B1 (en) * | 1998-06-19 | 2001-03-27 | International Business Machines Corporation | Dual gate FET and process |
US6380027B2 (en) * | 1999-01-04 | 2002-04-30 | International Business Machines Corporation | Dual tox trench dram structures and process using V-groove |
US7019342B2 (en) * | 2003-07-03 | 2006-03-28 | American Semiconductor, Inc. | Double-gated transistor circuit |
US6924517B2 (en) | 2003-08-26 | 2005-08-02 | International Business Machines Corporation | Thin channel FET with recessed source/drains and extensions |
US6914303B2 (en) | 2003-08-28 | 2005-07-05 | International Business Machines Corporation | Ultra thin channel MOSFET |
US6939751B2 (en) | 2003-10-22 | 2005-09-06 | International Business Machines Corporation | Method and manufacture of thin silicon on insulator (SOI) with recessed channel |
GB0411621D0 (en) * | 2004-05-25 | 2004-06-30 | Koninkl Philips Electronics Nv | Dual gate semiconductor device |
US7091069B2 (en) | 2004-06-30 | 2006-08-15 | International Business Machines Corporation | Ultra thin body fully-depleted SOI MOSFETs |
DE102004033148B4 (de) * | 2004-07-08 | 2007-02-01 | Infineon Technologies Ag | Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung zur Verwendung als Doppelgate-Feldeffekttransistor |
-
2006
- 2006-10-03 US US11/538,174 patent/US7485510B2/en not_active Expired - Fee Related
-
2007
- 2007-10-08 CN CNB2007101499549A patent/CN100568531C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7485510B2 (en) | 2009-02-03 |
CN101159288A (zh) | 2008-04-09 |
US20080079037A1 (en) | 2008-04-03 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171128 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171128 Address after: American New York Patentee after: Core USA second LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091209 Termination date: 20191008 |