CN100568511C - 多比特可编程非易失性存储器单元、阵列及其制造方法 - Google Patents
多比特可编程非易失性存储器单元、阵列及其制造方法 Download PDFInfo
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CNB2007103084070A CN100568511C (zh) | 2007-12-29 | 2007-12-29 | 多比特可编程非易失性存储器单元、阵列及其制造方法 |
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CN100568511C true CN100568511C (zh) | 2009-12-09 |
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US7933139B2 (en) * | 2009-05-15 | 2011-04-26 | Macronix International Co., Ltd. | One-transistor, one-resistor, one-capacitor phase change memory |
US11462282B2 (en) | 2020-04-01 | 2022-10-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor memory structure |
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Address after: 100084 Room 301, B building, Tsinghua Science and Technology Park, Haidian District, Beijing Patentee after: GIGADEVICE SEMICONDUCTOR Inc. Address before: 100084 Room 301, B building, Tsinghua Science and Technology Park, Haidian District, Beijing Patentee before: GigaDevice Semiconductor Inc. |
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |