CN100565826C - 一种ZnO背栅纳米线场效应管的制备方法 - Google Patents
一种ZnO背栅纳米线场效应管的制备方法 Download PDFInfo
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- CN100565826C CN100565826C CNB2008102233532A CN200810223353A CN100565826C CN 100565826 C CN100565826 C CN 100565826C CN B2008102233532 A CNB2008102233532 A CN B2008102233532A CN 200810223353 A CN200810223353 A CN 200810223353A CN 100565826 C CN100565826 C CN 100565826C
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CNB2008102233532A CN100565826C (zh) | 2008-09-26 | 2008-09-26 | 一种ZnO背栅纳米线场效应管的制备方法 |
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CNB2008102233532A CN100565826C (zh) | 2008-09-26 | 2008-09-26 | 一种ZnO背栅纳米线场效应管的制备方法 |
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CN101383291A CN101383291A (zh) | 2009-03-11 |
CN100565826C true CN100565826C (zh) | 2009-12-02 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102214577B (zh) * | 2010-04-09 | 2012-12-26 | 中国科学院微电子研究所 | 一种制作纳米开关的方法 |
CN102148160B (zh) * | 2011-01-19 | 2013-03-06 | 青岛大学 | 一种制备P型SiC纳米线场效应管的方法 |
CN102412301A (zh) * | 2011-10-13 | 2012-04-11 | 复旦大学 | 一种垂直结构纳米线隧穿场效应晶体管及其的制备方法 |
CN102435634B (zh) * | 2011-11-14 | 2013-11-27 | 电子科技大学 | 一种otft集成传感器阵列及其制作方法 |
CN103107065B (zh) * | 2011-11-15 | 2017-04-05 | 黄辉 | 一种基于纳米线有序排列的纳米线器件的制备方法 |
CN102623508B (zh) * | 2012-04-17 | 2014-03-26 | 北京大学 | 石墨烯场效应晶体管及其制备方法 |
CN103034014A (zh) * | 2012-12-26 | 2013-04-10 | 东南大学 | 一种太赫兹波调制器 |
CN103280454B (zh) * | 2013-06-04 | 2016-08-31 | 东北师范大学 | 基于导电纳米带电极的微纳单晶场效应晶体管及制备方法 |
CN108615770B (zh) * | 2018-03-19 | 2021-09-21 | 中国科学院微电子研究所 | 场效应晶体管与检波电路 |
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Non-Patent Citations (2)
Title |
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基于单根氧化锌纳米线的场效应管的光电特性研究. 李静雷等.真空科学与技术学报,第28卷第1期. 2008 |
基于单根氧化锌纳米线的场效应管的光电特性研究. 李静雷等.真空科学与技术学报,第28卷第1期. 2008 * |
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