CN100561667C - The formation method of anti-reflecting layer and be used to make the method for dual-damascene structure - Google Patents
The formation method of anti-reflecting layer and be used to make the method for dual-damascene structure Download PDFInfo
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- CN100561667C CN100561667C CNB200610147811XA CN200610147811A CN100561667C CN 100561667 C CN100561667 C CN 100561667C CN B200610147811X A CNB200610147811X A CN B200610147811XA CN 200610147811 A CN200610147811 A CN 200610147811A CN 100561667 C CN100561667 C CN 100561667C
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Abstract
A kind of formation method of anti-reflecting layer comprises: the semiconductor substrate is provided; To described semiconductor-based end ejection antireflection material, and rotated the described semiconductor-based end with first rate; Make the described semiconductor-based end with second speed rotation greater than described first rate; Make the described semiconductor-based end with third speed rotation less than described second speed; Make the described semiconductor-based end to rotate greater than described third speed and less than the 4th speed of second speed; Stop to described semiconductor-based end ejection antireflection material; Make the described semiconductor-based end to rotate greater than described the 4th speed and less than the 5th speed of second speed.The surface of the anti-reflecting layer that the inventive method forms has flatness preferably.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of formation method of anti-reflecting layer and be used to make the method for dual-damascene structure.
Background technology
Along with semiconductor fabrication process constantly to the progress of little live width direction, the depth of focus of photoetching process is more and more littler, the flatness of semiconductor-based basal surface is increasing to the influence of the quality of photoetching process, at 0.18um and following technology node thereof, industry is introduced anti-reflecting layer, reduces the reflectivity of semiconductor-based basal surface on the one hand, on the one hand the surface at the semiconductor-based end of planarization, the photoresist layer of spin coating has higher flatness after making, to improve the process window of photoetching.For example, in the manufacturing process of dual-damascene structure, after giving birth to formation connecting hole or groove, dielectric layer need photoetching once more to form groove or connecting hole, but, be at first to form connecting hole or groove all can to cause semiconductor-based basal surface no longer be smooth surface, the first spin coating of needs is used for the anti-reflecting layer of planarization, connecting hole in the filling semiconductor substrate or groove, and then the spin coating photoresist layer carries out follow-up photoetching process.Number of patent application be US7030031B U.S. Patent Publication a kind of dual-damascene technics.The generalized section of each step corresponding structure of the manufacture method of the dual-damascene technics of the described patent disclosure of Fig. 1 to Fig. 5.
As shown in Figure 1, be formed with copper conductor layer 10 at semiconductor-based the end 11, on the described semiconductor-based end 11 and copper conductor layer 10, be formed with first cover layer 12, on described first cover layer 12, be formed with middle dielectric layer 13, on described middle dielectric layer 13, be formed with second cover layer 14, method by chemical wet etching forms connecting hole 15 in described middle dielectric layer 13, on described connecting hole 15 and described second cover layer 14, form planarization layer 16, on described planarization layer 16, form barrier layer 17, on described barrier layer 17, form photoresist layer 19, and form channel patterns 20 by exposure imaging.
As shown in Figure 2, remove the barrier layer 17 of described channel patterns 20 bottoms by etching.As shown in Figure 3, the planarization layer 16 that continues the described channel patterns of etching 20 bottoms forms openings 22, and described photoresist layer 19 was removed when etching formed opening 22.As shown in Figure 4, continue the planarization layer 16 of the described opening of etching 22 bottoms, the described opening degree of depth is increased, form groove 23, and remove described barrier layer 17 simultaneously.As shown in Figure 5, remove described remaining planarization layer 16, and remove first cover layer 12 of described connecting hole 15 bottoms, described copper conductor layer 10 surfaces are exposed.As shown in Figure 6, fill metal material 24 in described groove 23 and described connecting hole 15, for example copper promptly forms dual-damascene structure.
In the said method, the technology that forms the higher planarization layer 16 of surface flatness is very important, antireflection material can be used for forming described planarization layer 16, the technology of the material of the planarization layer 16 of employing antireflection material, the formation step is as follows, step 1, spin-coating equipment is sent at the semiconductor-based end 11 that will have connecting hole 15; Step 2 makes described substrate rotate with first rate, and for example 450rpm begins to spray the anti-reflecting layer material simultaneously; Step 3 improves described substrate rotating speed to the second speed, the described antireflection material of for example 700rpm, and continuation ejection; Step 4 improves described substrate rotating speed to third speed, the described anti-reflecting layer material of for example 800rpm, and continuation ejection; Step 5 stops to spray described anti-reflecting layer material, improves described substrate rotating speed to the four speed, and for example, 1000 to 1500rpm, and the long time of rotation; Because the density degree difference of the diverse location connecting hole 15 at the described semiconductor-based end 11, and large stretch of spacious zone is arranged in the subregion of described semiconductor-based basal surface, make that but the uniformity of thickness of planarization layer 16 of the spin coating that described spin coating method forms is relatively poor, the flatness on surface is relatively poor, the local described planarization layer 16 comparatively intensive at described connecting hole 15 is thinner, and the planarization layer 16 on large stretch of spacious zone is thicker at described the semiconductor-based end, the photoetching process of road channel patterns was brought bigger difficulty under this gave, and had reduced to form the process window of channel patterns.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of formation method of anti-reflecting layer and be used to make the method for dual-damascene structure, to solve the relatively poor problem of anti-reflecting layer surface flatness that existing method forms.
For achieving the above object, the formation method of a kind of anti-reflecting layer provided by the invention comprises: the semiconductor substrate is provided; To described semiconductor-based end ejection antireflection material, and rotated the described semiconductor-based end with first rate; Make the described semiconductor-based end with second speed rotation greater than described first rate; Make the described semiconductor-based end with third speed rotation less than described second speed; Make the described semiconductor-based end to rotate greater than described third speed and less than the 4th speed of second speed; Stop to described semiconductor-based end ejection antireflection material; Make the described semiconductor-based end to rotate greater than described the 4th speed and less than the 5th speed of second speed.
This method further comprises: made described rotation of the semiconductor-based end before described semiconductor-based end ejection antireflection material.
Preferably, the speed of rotation of the described semiconductor-based end is 800 to 1500rpm, and the time is 0.1 to 1s.
Preferably, described first rate is 50 to 300rpm.
Preferably, described second speed is 1500 to 4000rpm.
Preferably, described third speed is 50 to 300rpm.
Preferably, described the 4th speed is 350 to 700rpm.
Preferably, described the 5th speed is 700 to 1000rpm.
Preferably, the described semiconductor-based end is 15 to 40s with time of described the 5th speed rotation.
This method further comprises the step that the suprabasil antireflection material of described semiconductor is toasted.
Accordingly, the present invention comprises that also a kind of formation method of using described anti-reflecting layer makes the method for dual-damascene structure, comprising: the semiconductor-based end with dielectric layer is provided, is formed with first opening in described dielectric layer; To described dielectric layer surface ejection antireflection material, and rotated the described semiconductor-based end with first rate; Make the described semiconductor-based end with second speed rotation greater than described first rate; Make the described semiconductor-based end with third speed rotation less than described second speed; Make the described semiconductor-based end to rotate greater than described third speed and less than the 4th speed of second speed; Stop to described dielectric layer surface ejection antireflection material; Make the described semiconductor-based end to rotate greater than described the 4th speed and less than the 5th speed of second speed; Stop to make described rotation of the semiconductor-based end; Spin coating photoresist layer and graphical second patterns of openings that forms on described antireflection material; By etching described second patterns of openings is transferred in the described dielectric layer, formed second opening.
Preferably, described dielectric layer is an advanced low-k materials.
Preferably, described first rate is 50 to 300rpm.
Preferably, described second speed is 1500 to 4000rpm.
Preferably, described third speed is 50 to 300rpm.
Preferably, described the 4th speed is 350 to 700rpm.
Preferably, described the 5th speed is 700 to 1000rpm.
Preferably, the described semiconductor-based end is 15 to 40s with time of described the 5th speed rotation.
This method further comprises the technology that the suprabasil antireflection material of described semiconductor is toasted.
This method further is included in the step that forms sacrifice layer on the described antireflection material.
This method further is included in the step that forms low temperature oxide layer on the described sacrifice layer.
Preferably, described first opening is a connecting hole, and second opening is a groove.
Preferably, described first opening is a groove, and second opening is a connecting hole.
Compared with prior art, the present invention has the following advantages:
The inventive method is in the process of spin coating antireflection material, by adjusting the speed of rotation at the semiconductor-based end, at first make the described semiconductor-based end with slower first rate rotation, pass through centrifugal action, the antireflection material of the liquid state of ejection is along described semiconductor-based basal surface outwards moving slowly, and is covered with whole semiconductor-based basal surface;
Then with higher second speed rotation, make the thicker antireflection material in described semiconductor-based basal surface subregion to thin zone flows, perhaps be thrown out of at described the semiconductor-based end, continue the ejection antireflection material simultaneously and replenish, and make it to be filled to described groove that does not fill up or connecting hole;
Then be reduced to the third speed rotation, the speed of rotation at the described semiconductor-based end is dropped to lower third speed in the short period of time by the second higher speed, antireflection material to described semiconductor-based basal surface refluxes, make the center direction of antireflection material part that is positioned at the edge move to the described semiconductor-based end, can play the effect of planarization effect and further filling groove or connecting hole, in addition, described nozzle continues to central authorities' ejection antireflection material at the described semiconductor-based end and makes it slowly outwards to flow, and both are in conjunction with the antireflection material flatness that improves described semiconductor-based basal surface with to the darker groove of described semiconductor-based basal surface, connecting hole, the covering power of opening equal ripple;
On the basis of third speed, progressively increase rotating speed and the 5th speed rotation then to fix, form the good antireflection material of surface flatness, described the 5th speed rotation long period, rotation by this step, get rid of the unnecessary antireflection material of described semiconductor-based basal surface on the one hand, and it is even to make the antireflection material that is retained in described semiconductor-based basal surface form thickness, and surface flatness is anti-reflecting layer preferably.
This method is applied to the surface to be had than the semiconductor-based end of macrorelief or has at the semiconductor-based end of openings such as groove, connecting hole, can form flatness anti-reflecting layer preferably, make follow-up spin coating photoresist post-exposure technology have bigger process window.
Description of drawings
The generalized section of each step corresponding structure of the existing a kind of double mosaic structure manufacture method of Fig. 1 to Fig. 6;
Fig. 7 is the flow chart of embodiment of the formation method of anti-reflecting layer of the present invention;
Fig. 8 is applied to make the flow chart of embodiment of the method for dual-damascene structure for the formation method of anti-reflecting layer of the present invention;
Fig. 9 to Figure 15 is applied to make the generalized section of each step corresponding construction of embodiment of the method for dual-damascene structure for the formation method of anti-reflecting layer of the present invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
The flow chart of the embodiment of the formation method of Fig. 7 anti-reflecting layer of the present invention.
As shown in Figure 7, at first provide semiconductor substrate (S100).Described semiconductor-based bottom materials can be a kind of in monocrystalline silicon, polysilicon, amorphous silicon, silicon Germanium compound, the GaAs, and the described semiconductor-based end can also comprise silicon on the insulating barrier (SOI) structure.The described semiconductor-based end, have up-and-down surface, for example, is formed with structures such as groove, opening in the described semiconductor-based end.
The described semiconductor-based end, be sent to spin-coating equipment, nozzle is moved to the middle upper part position at the described semiconductor-based end, make the described semiconductor-based end of described nozzle distance have certain distance.
Make the described semiconductor-based end with slower first rate rotation, described nozzle is to the liquid antireflection material (S110) of described semiconductor-based basal surface ejection simultaneously.By centrifugal action, the antireflection material of the liquid state of ejection is along described semiconductor-based basal surface outwards moving slowly, and is covered with whole semiconductor-based basal surface.First rate described in the present embodiment is 50 to 300rpm, the described semiconductor-based end with described first rate rotation 0.1 to 1s.
The ejection speed of the anti-reflecting layer material of described liquid state is according to the total amount and the time decision of ejection.For example, according to the needs of technology, the total amount that described antireflection material need spray is 2cc, and the ejection time is 1s, and then spraying speed is 2cc/s.
Before described semiconductor-based basal surface ejection antireflection material, can make the described semiconductor-based end earlier with certain speed rotation.And then rotating speed of the described semiconductor-based end transferred to described first rate and spray described anti-reflecting layer material.The effect of this rotation is as follows: the semiconductor-based end, is when being admitted to spin-coating equipment, the temperature on its surface, states such as humidity may be inequality with the state in the described spin-coating equipment, may make that the adhesiveness of the anti-reflecting layer that forms and described semiconductor surface is bad if carry out spin coating proceeding immediately, or cause other defective, make that by this rotation step the state in described semiconductor-based basal surface and the described spin-coating equipment is more consistent, carry out follow-up spin coating proceeding in this case, reduce the negative consequence that outside uncertain factor may cause as much as possible, more help to form high-quality anti-reflecting layer.This step rotating speed is 800 to 1500rpm in the present embodiment, and the time is 0.1 to 1s.
Then, continue to spray antireflection material with same ejection speed to described semiconductor-based basal surface, change rotating speed to the second speed at the described semiconductor-based end, described second speed is greater than described first rate (S120).Rotate through described second rate that hastens, the anti-reflecting layer material fills up the low-lying zone of described semiconductor-based basal surface at least, and makes the surface of the suprabasil antireflection material of described semiconductor have arcs of recesses.Described second speed of present embodiment is 1500 to 4000rpm, and rotational time is 0.1 to 1.5s.
Because described semiconductor-based basal surface is uneven, make described semiconductor-based basal surface zones of different also different to the resistance of described antireflection material, described antireflection material is in the flow rate difference in the different zone of described semiconductor-based basal surface when rotating with slower first rate, caused the antireflection material thickness difference everywhere that forms, for example when having groove or connecting hole structure at described the semiconductor-based end, described antireflection material at first will be inserted described groove and connecting hole structure, when described slower first rate rotates, may occur groove and connecting hole fill out discontented, and other smooth thicker phenomenon of spacious regional antireflection material.In of the rotation of this step by the second higher speed, make the thicker antireflection material in described semiconductor-based basal surface subregion to thin zone flows, perhaps be thrown out of at described the semiconductor-based end, continue the ejection antireflection material simultaneously and replenish, and make it to be filled to described groove that does not fill up or connecting hole.Because this second speed is bigger, thereby make described semiconductor-based feather edge assemble more antireflection material, and central authorities are less, the antireflection material surface of described semiconductor-based basal surface is arcs of recesses.
The speed of rotation that changes the described semiconductor-based end is to third speed, and described third speed continues ejection antireflection material (S130) simultaneously less than described second speed.This step mainly acts on as follows: by reducing the speed of rotation antireflection material of described semiconductor-based basal surface is refluxed; Continue the ejection antireflection material in addition and further fill sunk area.Third speed described in the present embodiment is 50 to 300rpm, and the time is 0.1 to 1.5s.
The speed of rotation at the described semiconductor-based end is dropped to lower third speed in the short period of time by the second higher speed, antireflection material to described semiconductor-based basal surface refluxes, make the center direction of antireflection material part that is positioned at the edge move, can play the effect of planarization effect and further filling groove or connecting hole to the described semiconductor-based end.In addition, described nozzle continues to central authorities' ejection antireflection material at the described semiconductor-based end and makes it slowly outwards to flow, both are in conjunction with the antireflection material flatness that improves described semiconductor-based basal surface with to the covering power of the darker groove of described semiconductor-based basal surface, connecting hole, opening equal ripple.
Improve the speed of rotation to the four speed at the described semiconductor-based end, and continue the ejection antireflection material, described the 4th speed is greater than described third speed and less than described second speed (S140).Further the antireflection material of described semiconductor-based basal surface is replenished and planarization.The 4th speed described in the present embodiment is 350 to 700rpm, and the time is 0.1 to 1.5s.
Stop to described semiconductor-based basal surface ejection antireflection material (S150).
Improve the speed of rotation to the five speed at the described semiconductor-based end, described the 5th speed is greater than described the 4th speed and less than described second speed (S160).Described the 5th speed rotation long period, rotation by this step, get rid of the unnecessary antireflection material of described semiconductor-based basal surface on the one hand, and it is even to make the antireflection material that is retained in described semiconductor-based basal surface form thickness, surface flatness is anti-reflecting layer preferably.The 5th speed described in the present embodiment is 700 to 1000rpm, with time of described the 5th speed rotation be 15 to 40s.
Further the antireflection material of described semiconductor-based basal surface is carried out baking process, strengthen the adhesion and the transpiring moisture at the described antireflection material and the semiconductor-based end.
The inventive method is in the process of spin coating antireflection material, by adjusting the speed of rotation at the semiconductor-based end, at first make the described semiconductor-based end with slower first rate rotation, then with higher second speed rotation, then be reduced to the third speed rotation, on the basis of third speed, progressively increase rotating speed then and, form surface flatness antireflection material layer preferably with fixing the 5th speed rotation.Particularly this method is applied to the surface and has than the semiconductor-based end of macrorelief or have at the semiconductor-based end of openings such as groove, connecting hole, can form flatness anti-reflecting layer preferably, make follow-up exposure technology have bigger process window.
Fig. 8 is applied to make the flow chart of embodiment of the method for dual-damascene structure for the formation method of described anti-reflecting layer.
As shown in Figure 8, provide the semiconductor-based end with dielectric layer, be formed with first opening in described dielectric layer, described first opening can be groove or connecting hole (S100);
To described dielectric layer surface ejection antireflection material, and make the described semiconductor-based end with first rate rotation (S110), first rate described in the present embodiment is 50 to 300rpm;
Make the described semiconductor-based end with greater than second speed of described first rate rotation (S120), second speed described in the present embodiment is 1500 to 4000rpm;
Make the described semiconductor-based end with less than the third speed of described second speed rotation (S130), third speed described in the present embodiment is 50 to 300rpm;
Make the described semiconductor-based end with greater than described third speed and less than the 4th speed of second speed rotation (S140), the 4th speed described in the present embodiment is 350 to 700rpm.
Stop to described dielectric layer surface ejection antireflection material (S150);
Make the described semiconductor-based end with greater than described the 4th speed and less than the 5th speed of second speed rotation (S160), the 5th speed described in the present embodiment is 700 to 1000rpm, and the duration is 15 to 40s;
Stop to make described semiconductor-based end rotation (S170);
Spin coating photoresist layer and graphical second patterns of openings (S180) that forms on described antireflection material;
By etching described second patterns of openings is transferred in the described dielectric layer, formed second opening (S190), described second patterns of openings is connecting hole or groove.
Below in conjunction with profile the embodiment that the formation method of described anti-reflecting layer is applied to make the method for dual-damascene structure is described in detail.
Step 1 as shown in Figure 9, at first provides semiconductor substrate 200, and the described semiconductor-based end 200 can be materials such as silicon on polysilicon, monocrystalline silicon, amorphous silicon, the insulating barrier (SOI), arsenicization are sowed, silicon Germanium compound.Be formed with etching stop layer 201 on surface, the described semiconductor-based ends 200, described etching stop layer 201 is a kind of or its combination in silica, carborundum, silicon nitride, carbon silicon oxide compound, the nitrogen-doped silicon carbide, and thickness is 20 to 80nm.Be formed with dielectric layer 202 on described etching stop layer 201, described dielectric layer 202 is a low-k, for example can be a kind of in black diamond, fluorine silex glass, phosphorosilicate glass, Pyrex, the boron-phosphorosilicate glass.Be formed with first opening 204 in described dielectric layer 202, first opening 204 is a connecting hole described in the present embodiment, and the surface of described etching stop layer 201 is exposed in the bottom of described connecting hole.Described in other embodiments first opening 204 also can be a groove.
Step 2 is sent to spin-coating equipment with the described semiconductor-based end 200, and nozzle is moved to the middle upper part position at the described semiconductor-based end 200, and the described semiconductor-based end 200 of described nozzle distance has certain distance.Make the described semiconductor-based end 200 with slower first rate rotation, described nozzle is to the liquid antireflection material of described dielectric layer 202 surface ejections simultaneously.By centrifugal action, the antireflection material of the liquid state of ejection is outwards moving slowly along described dielectric layer 202 surfaces.First rate described in the present embodiment is 50 to 300rpm, the described semiconductor-based end 200 with described first rate rotation 0.1 to 1s.
The ejection speed of the anti-reflecting layer material of described liquid state is according to the total amount and the time decision of ejection.For example, according to the needs of technology, the total amount that described antireflection material need spray is 2cc, and the ejection time is 1s, and then spraying speed is 2cc/s.
Before described dielectric layer 202 surface ejection antireflection material, can make the described semiconductor-based end 200 earlier with certain speed rotation.And then rotating speed of the described semiconductor-based ends 200 transferred to described first rate and spray described anti-reflecting layer material.The effect of this rotation is as follows: the semiconductor-based end 200, is when being admitted to spin-coating equipment, the temperature on described dielectric layer 202 surfaces, states such as humidity may be inequality with the state in the described spin-coating equipment, may make that the adhesiveness on the anti-reflecting layer that forms and described dielectric layer 202 surfaces is bad if carry out spin coating proceeding immediately, or cause other defective. make that by this rotation step the state in described dielectric layer 202 surfaces and the described spin-coating equipment is more consistent, carry out follow-up spin coating proceeding in this case, reduce the negative consequence that outside uncertain factor may cause as much as possible, more help to form high-quality anti-reflecting layer.This step rotating speed is 800 to 1500rpm in the present embodiment, and the time is 0.1 to 1s.
Step 3 continues to spray antireflection material with same ejection speed to described dielectric layer 202 surfaces, changes rotating speed to the second speed at the described semiconductor-based end 200, and described second speed is greater than described first rate.Through described second the hasten rate rotation, the anti-reflecting layer material fills up the low-lying zone on described dielectric layer surface at least, and for example connecting hole 204, and makes the surface of antireflection material on described dielectric layer 202 surfaces have arcs of recesses.Described second speed of present embodiment is 1500 to 4000rpm, and rotational time is 0.1 to 1.5s.
Owing to have connecting hole 204 in the described dielectric layer 202, make the surface undulation injustice, make that the zones of different on described dielectric layer 202 surfaces is also different to the resistance of described antireflection material, described antireflection material is in the flow rate difference in different zone, described dielectric layer 202 surfaces when rotating with slower first rate, caused the antireflection material thickness difference everywhere that forms, for example described antireflection material at first will be inserted in the described connecting hole 204, and when the described semiconductor-based end 200 during in the rotation of described slower first rate, may occur connecting hole 204 fill out discontented, and other smooth thicker phenomenon of spacious regional antireflection material.In of the rotation of this step by the second higher speed, make the thicker antireflection material in described dielectric layer 202 surface portion zones to thin zone flows, perhaps be thrown out of outside the described dielectric layer 202, continue the ejection antireflection material simultaneously and replenish, and make it to be filled to the described connecting hole that does not fill up 204.Because this second speed is bigger, thereby make the edge on described dielectric layer 202 surfaces assemble more antireflection material, and central authorities are less, are arcs of recesses.
Step 4, the speed of rotation that changes the described semiconductor-based end 200 are to third speed, and described third speed continues the ejection antireflection material simultaneously less than described second speed.This step mainly acts on as follows: by reducing the speed of rotation antireflection material on described dielectric layer 202 surfaces is refluxed; Continue the ejection antireflection material in addition and further fill sunk area.Third speed described in the present embodiment is 50 to 300rpm, and the time is 0.1 to 1.5s.
The speed of rotation at the described semiconductor-based end 200 is dropped to lower third speed in the short period of time by the second higher speed, antireflection material to described dielectric layer 202 surfaces refluxes, make the antireflection material part that is positioned at the edge move, can play planarization effect and the further effect of filling connecting hole 204 to the center direction of described dielectric layer 202.In addition, described nozzle continues to central authorities' ejection antireflection material on described dielectric layer 202 surfaces and makes it slowly outwards to flow, and both are in conjunction with the antireflection material flatness that improves described dielectric layer 202 surfaces with to the covering power of connecting hole 204.
Step 5 improves the speed of rotation to the four speed at the described semiconductor-based end 200, and the ejection antireflection material, and described the 4th speed is greater than described third speed and less than described second speed.Further the antireflection material on described dielectric layer 202 surfaces is replenished and planarization.The 4th speed described in the present embodiment is 350 to 700rpm, and the time is 0.1 to 1.5s.
Step 6 stops to described dielectric layer 202 surface ejection antireflection material.
Step 7 improves the speed of rotation to the five speed at the described semiconductor-based end 200, and described the 5th speed is greater than described the 4th speed and less than described second speed.Described the 5th speed rotation long period, get rid of unnecessary antireflection material on the one hand, and make the antireflection material that is retained in described dielectric layer 202 surfaces form the anti-reflecting layer that thickness evenly covers, as shown in figure 10 206.The 5th speed described in the present embodiment is 700 to 1000rpm, with time of described the 5th speed rotation be 15 to 40s.
Step 8 stops to make described rotation of the semiconductor-based ends 200.
Further the anti-reflecting layer 206 on described dielectric layer 202 surfaces is carried out baking process, strengthen the adhesion and the transpiring moisture of described anti-reflecting layer 206 and dielectric layer 202.
Step 9, as shown in figure 11, spin coating photoresist layer 201 and carry out exposure imaging and form second patterns of openings 210 on described anti-reflecting layer 206, described second patterns of openings 210 of present embodiment is a channel patterns, described in other embodiments second patterns of openings 210 is the connecting hole pattern.
Before the described photoresist layer 208 of spin coating, can also at first form sacrifice layer 207 as shown in figure 12, on described sacrifice layer 207, form low temperature oxide layer 209.The described photoresist layer 208 of spin coating and form second patterns of openings 210 then.
Owing in preceding road technology, formed the anti-reflecting layer 206 that has an even surface, thereby the photoresist of spin coating has homogeneous thickness and smooth surface, the technology that makes the photoetching of this step form second patterns of openings 210 has bigger process window, improve the maintainability of technology, helped to form side wall profile second patterns of openings 210 preferably.
For structure shown in Figure 11, by etching described second patterns of openings 210 is transferred in the described dielectric layer 202 and to be formed groove, repeat no more here.
As shown in figure 14, the dielectric layer 202 of the described second patterns of openings 210a of etching bottom forms opening 211 in described dielectric layer 202, and opening described in the present embodiment 211 is a groove.Remove described low temperature oxide layer 209 in the time of etching, and made the reduced thickness of described sacrifice layer 207.
Further, as shown in figure 15, remove described anti-reflecting layer 206, and remove the etching stop layer 201 of described first opening 204 bottoms by etching, fill metal material 212 in described first opening 204 and second opening 211, for example copper has promptly formed dual-damascene structure as shown in figure 15.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (23)
1, a kind of formation method of anti-reflecting layer comprises:
The semiconductor substrate is provided;
To described semiconductor-based end ejection antireflection material, and rotated the described semiconductor-based end with first rate;
Make the described semiconductor-based end with second speed rotation, make the groove of described semiconductor-based basal surface or connecting hole be filled greater than described first rate;
Make the described semiconductor-based end with less than the rotation of the third speed of described second speed, make the antireflection material that is positioned at semiconductor-based basal surface edge flow to semiconductor-based basal surface centre;
Make the described semiconductor-based end to rotate greater than described third speed and less than the 4th speed of second speed;
Stop to described semiconductor-based end ejection antireflection material;
Make the described semiconductor-based end to rotate greater than described the 4th speed and less than the 5th speed of second speed.
2, the formation method of anti-reflecting layer as claimed in claim 1 is characterized in that, this method further comprises: made described rotation of the semiconductor-based end before described semiconductor-based end ejection antireflection material.
3, the formation method of anti-reflecting layer as claimed in claim 2 is characterized in that: the speed of rotation of the described semiconductor-based end is 800 to 1500rpm, and the time is 0.1 to 1s.
4, the formation method of anti-reflecting layer as claimed in claim 1 is characterized in that: described first rate is 50 to 300rpm.
5, the formation method of anti-reflecting layer as claimed in claim 1 is characterized in that: described second speed is 1500 to 4000rpm.
6, the formation method of anti-reflecting layer as claimed in claim 1 is characterized in that: described third speed is 50 to 300rpm.
7, the formation method of anti-reflecting layer as claimed in claim 1 is characterized in that: described the 4th speed is 350 to 700rpm.
8, the formation method of anti-reflecting layer as claimed in claim 1 is characterized in that: described the 5th speed is 700 to 1000rpm.
9, the formation method of anti-reflecting layer as claimed in claim 8 is characterized in that: the described semiconductor-based end is 15 to 40s with time of described the 5th speed rotation.
10, the formation method of anti-reflecting layer as claimed in claim 1 is characterized in that: this method further comprises the step that the suprabasil antireflection material of described semiconductor is toasted.
11, a kind of application rights requires 1 described method to make the method for dual-damascene structure, comprising:
The one semiconductor-based end with dielectric layer, be provided, in described dielectric layer, be formed with first opening;
To described dielectric layer surface ejection antireflection material, and rotated the described semiconductor-based end with first rate;
Make the described semiconductor-based end with second speed rotation, make the groove of described semiconductor-based basal surface or connecting hole be filled greater than described first rate;
Make the described semiconductor-based end with less than the rotation of the third speed of described second speed, make the antireflection material that is positioned at semiconductor-based basal surface edge flow to semiconductor-based basal surface centre;
Make the described semiconductor-based end to rotate greater than described third speed and less than the 4th speed of second speed;
Stop to described dielectric layer surface ejection antireflection material;
Make the described semiconductor-based end to rotate greater than described the 4th speed and less than the 5th speed of second speed;
Stop to make described rotation of the semiconductor-based end;
Spin coating photoresist layer and graphical second patterns of openings that forms on described antireflection material;
By etching described second patterns of openings is transferred in the described dielectric layer, formed second opening.
12, method as claimed in claim 11 is characterized in that: described dielectric layer is an advanced low-k materials.
13, the method for stating as claim 11 is characterized in that: described first rate is 50 to 300rpm.
14, method as claimed in claim 11 is characterized in that: described second speed is 1500 to 4000rpm.
15, method as claimed in claim 11 is characterized in that: described third speed is 50 to 300rpm.
16, method as claimed in claim 11 is characterized in that: described the 4th speed is 350 to 700rpm.
17, method as claimed in claim 11 is characterized in that: described the 5th speed is 700 to 1000rpm.
18, method as claimed in claim 17 is characterized in that: the described semiconductor-based end is 15 to 40s with time of described the 5th speed rotation.
19, method as claimed in claim 11 is characterized in that, this method further comprises the technology that the suprabasil antireflection material of described semiconductor is toasted.
20, method as claimed in claim 11 is characterized in that, this method further is included in the step that forms sacrifice layer on the described antireflection material.
21, method as claimed in claim 20 is characterized in that, this method further is included in the step that forms low temperature oxide layer on the described sacrifice layer.
22, method as claimed in claim 11 is characterized in that: described first opening is a connecting hole, and second opening is a groove.
23, method as claimed in claim 11 is characterized in that: described first opening is a groove, and second opening is a connecting hole.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610147811XA CN100561667C (en) | 2006-12-22 | 2006-12-22 | The formation method of anti-reflecting layer and be used to make the method for dual-damascene structure |
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| CNB200610147811XA CN100561667C (en) | 2006-12-22 | 2006-12-22 | The formation method of anti-reflecting layer and be used to make the method for dual-damascene structure |
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| CN100561667C true CN100561667C (en) | 2009-11-18 |
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| CN101996929B (en) * | 2009-08-20 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | Forming method of dual-damascene structure and semiconductor structure |
| CN102054751B (en) * | 2009-11-05 | 2013-03-13 | 中芯国际集成电路制造(上海)有限公司 | Dual-inlay structure and forming method thereof |
| CN102054753B (en) * | 2009-11-10 | 2013-03-13 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for dual-inlay structure |
| CN104124203B (en) * | 2013-04-28 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | The forming method of interconnection structure |
| CN104992898B (en) * | 2015-05-28 | 2017-12-08 | 北京七星华创电子股份有限公司 | A kind of method of improvement DHF erosion uniformities and control corrosion rate speed |
| DE102020126216A1 (en) * | 2020-04-29 | 2021-11-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and device for coating a substrate with photoresist |
| CN114952600B (en) * | 2022-07-11 | 2023-09-19 | 赛莱克斯微系统科技（北京）有限公司 | Planarization method and device for high-frequency transmission microstructure and electronic equipment |
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