CN100561654C - The flat-panel monitor of dual forked type side controlled cathode emission structure and manufacture craft thereof - Google Patents
The flat-panel monitor of dual forked type side controlled cathode emission structure and manufacture craft thereof Download PDFInfo
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- CN100561654C CN100561654C CNB2007100546241A CN200710054624A CN100561654C CN 100561654 C CN100561654 C CN 100561654C CN B2007100546241 A CNB2007100546241 A CN B2007100546241A CN 200710054624 A CN200710054624 A CN 200710054624A CN 100561654 C CN100561654 C CN 100561654C
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Abstract
The present invention relates to a kind of flat-panel monitor and manufacture craft thereof of dual forked type side controlled cathode emission structure, comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Be arranged on anode conductive layer and the phosphor powder layer of preparation on anode conductive layer on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component; Cathode glass faceplate is provided with grid lead layer, carbon nano-tube and dual forked type side controlled cathode emission structure; Can further strengthen the controlled function and the control efficiency of grid structure, improve the electron emission area and the emission effciency of carbon nanotube cathod, have that manufacturing process is reliable and stable, manufacture craft is simple, cost of manufacture is cheap, advantage of simple structure.
Description
Technical field
The invention belongs to the mutual crossing domain in technical field of flat panel display, microelectronics science and technology field, vacuum science and technical field and nanometer science and technology field, relate to the element manufacturing of panel field emission display, be specifically related to the content of element manufacturing aspect of the panel field emission display of carbon nanotube cathod, particularly a kind of flat-panel monitor of dual forked type side controlled cathode emission structure and manufacture craft thereof.
Background technology
Carbon nano tube field emission display is a kind of novel flat-panel display devices, and it utilizes carbon nano-tube as cathode material, and has replaced the thermionic electron guns in the conventional cathode ray tube display, thereby does not have time of delay, and response speed is faster.Under the high-tension effect of anode, quicken the anode motion from the carbon nanotube cathod electrons emitted, impact fluorescence bisque and send visible light, this principle of luminosity is similar to the principle of luminosity of cathode-ray tube display, so it has inherited the high definition image quality of cathode-ray tube display fully.Compare with LCD, no matter from aspects such as display sizes, display brightness, carbon nano tube field emission display all has more advantage, is desirable flat device product of future generation.
In the middle of present most of carbon nanotube cathod field emission display devices of reporting, all adopted grid structure to be positioned at the control model of carbon nanotube cathod superstructure.Owing to be subjected to the restriction of factors such as grid structure manufacture craft and manufacturing materials, it is too high that these displays generally all exist grid voltage, the brightness of display device is low, the not high disadvantage of the emission effciency of carbon nanotube cathod, and carbon nanotube cathod also is very important for the influence of image quality.Because the insulating material between grid structure and the carbon nanotube cathod structure has certain class of insulation, in case go beyond the limit the electrical break down phenomenon will take place, thereby the way of therefore reducing the distance reduction grid operating voltage between the two is subjected to a certain degree limiting.Because will be through can the impact fluorescence bisque after the grid structure from carbon nanotube cathod electrons emitted bundle, what therefore the emission area of carbon nanotube cathod can't be made is bigger, otherwise cause grid out of control easily, this effective electron emission area that also just means carbon nanotube cathod is fixed, and has also just limited the display brightness of further raising device.And these problems all need further to be improved and solve.In addition, in the middle of the panel field emission display spare of three-stage structure, guaranteeing that grid structure has carbon nanotube cathod under the prerequisite of good control action, also need to reduce as much as possible the total device cost, carry out reliable and stable, with low cost, function admirable, high quality devices is made.
Summary of the invention
The objective of the invention is to overcome the shortcoming and defect that exists in the above-mentioned flat-panel display device and provide a kind of with low cost, manufacturing process is reliable and stable, be made into the power height, the flat-panel monitor and the manufacture craft thereof of dual forked type side controlled cathode emission structure simple in structure.
The object of the present invention is achieved like this, comprise by anode glass panel, cathode glass faceplate and all around glass enclose the sealed vacuum chamber that frame constitutes; Be arranged on anode conductive layer and the phosphor powder layer of preparation on anode conductive layer on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate and getter subsidiary component; Cathode glass faceplate is provided with grid lead layer, carbon nano-tube and dual forked type side controlled cathode emission structure.
The backing material of described dual forked type side controlled cathode emission structure is a glass, as soda-lime glass, Pyrex, i.e. cathode glass faceplate; The insulation paste layer of the printing on the cathode glass faceplate forms insulating barrier; Metal level after the etching above the insulating barrier forms the grid lead layer; The insulation paste layer of the printing above the grid lead layer forms grid rising layer; Grid rising layer is wanted complete cover grid trace layer; There is small sircle hole in the grid rising layer, as the passage of grid extended line layer; The silver slurry layer formation grid extended line layer of printing in the small sircle hole in the grid rising layer; Metal level after the etching above the grid rising layer forms grid control one deck; Grid control one deck presents disc face type shape, depends on the upper surface of grid rising layer, and the lower surface and the grid lead layer of grid control one deck are interconnected; The insulation paste layer that grid control one deck prints above forms additional gate rising layer; Additional gate rising layer presents the cylinder type shape, be seated grid control one deck above, and the center of its center and disc face type grid control one deck coincides, the diameter of layer is less than the diameter of grid control one deck but additional gate raises, thus additional gate raise layer around expose the grid control one deck that presents annular shape; The upper top of additional gate rising layer is not a plane, but present the hole that caves inward of a camber, camber pit-holes maximum gauge is identical with the diameter of additional gate rising layer, and the bottom surface of pushing up plane and camber pit-holes of going up of additional gate rising layer coincides; Metal level after the etching on the side of additional gate rising layer forms two layers of grid control; Two layers of grid control depend on additional gate and raise on the exterior side wall of layer, and there are not two layers of grid control in all the other positions; Grid control one deck of two layers of grid control and bottom is interconnected; Two layers of insulation paste layer that prints above of grid control one deck and grid control form separator; Separator be looped around additional gate raise layer around, two layers of its lower surface cover grid control one deck and grid control, its upper surface then is to present an arcuate shape that caves inward; On the separator upper surface and the additional gate metal level that layer goes up after the etching on the end face that raises form the negative electrode transition zone; The negative electrode transition zone is covered with the upper surface of separator and the last end face of additional gate rising layer, and links together; Metal level after the etching above the negative electrode transition zone forms cathode conductive layer; Cathode conductive layer then lays respectively at above the negative electrode transition zone on the upper surface of separator, and additional gate raises above the negative electrode transition zone on the layer upper surface, and only is positioned on the arcwall face; Metal level after the etching above the grid rising layer forms the cathode leg layer; Cathode leg layer and negative electrode transition zone, cathode conductive layer all are interconnected; The insulation paste layer that the cathode leg layer prints above forms cathode coating; Made of carbon nanotubes is on cathode conductive layer.
The fixed position of described dual forked type side controlled cathode emission structure is for being fixed on the cathode glass faceplate; The grid lead layer is metal gold, silver, aluminium, molybdenum, chromium; Grid control one deck is metal gold, silver, copper, aluminium, molybdenum, chromium, tin; Grid control is metal gold, silver, copper, aluminium, molybdenum, chromium, tin for two layers; The trend of the trend of cathode leg layer and grid lead layer is vertical mutually; The cathode leg layer is metal gold, silver, copper, aluminium, molybdenum, chromium, tin, lead, indium; The negative electrode transition zone is metal gold, silver, aluminium, molybdenum, chromium, tin; Cathode conductive layer is metallic iron, cobalt, nickel.
A kind of manufacture craft of flat-panel monitor of dual forked type side controlled cathode emission structure, its manufacture craft is as follows:
1) making of cathode glass faceplate: whole plate glass is carried out scribing, produce cathode glass faceplate;
2) making of insulating barrier: printing insulation paste layer on cathode glass faceplate forms insulating barrier behind baking, sintering process;
3) making of grid lead layer: make metal level on insulating barrier, etching forms the grid lead layer;
4) the grid making of layer that raises: printing insulation paste layer on the grid lead layer forms the grid layer that raises behind baking, sintering process;
5) making of grid extended line layer: printed silver slurry in grid raises layer small sircle hole forms grid extended line layer behind baking, sintering process;
6) making of grid control one deck: on grid rising layer, prepare a metal level, form grid control one deck after the etching;
7) the additional gate making of layer that raises: printing insulation paste layer on grid control one deck forms the additional gate layer that raises behind baking, sintering process;
8) making of two layers of grid control: on additional gate raises the side of layer, prepare a metal level, form two layers of grid control after the etching;
9) making of separator: printing insulation paste layer on two layers of grid control one deck and grid control forms separator behind baking, sintering process;
10) making of negative electrode transition zone: on the upper surface of separator and additional gate raise the upper surface of layer, prepare a metal level, form the negative electrode transition zone after the etching;
11) making of cathode conductive layer: on the negative electrode transition zone, prepare a metal level, form cathode conductive layer after the etching;
12) making of cathode leg layer: on grid rising layer, prepare a metal level, form the cathode leg layer after the etching;
13) making of cathode coating: printing insulation paste layer on the cathode leg layer forms cathode coating behind baking, sintering process;
14) cleaning surfaces of dual forked type side controlled cathode emission structure is handled: clean is carried out on the surface to dual forked type side controlled cathode emission structure, removes impurity and dust;
15) preparation of carbon nano-tube: with made of carbon nanotubes on cathode conductive layer;
16) making of anode glass panel: whole plate glass is carried out scribing, produce the anode glass panel;
17) making of anode conductive layer: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
18) making of insulation paste layer: at the non-display area printing insulation paste layer of anode conductive layer;
19) making of phosphor powder layer: the viewing area printing phosphor powder layer on anode conductive layer;
20) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure and all around glass enclose frame and be assembled together, and getter is put in the middle of the cavity, fix with glass powder with low melting point;
21) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 18 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace.
Described step 19 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes).
The device that described step 21 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter of device inside bake and disappears, install pin formation finished parts at last additional.
The present invention has following good effect:
At first, in described dual forked type side controlled cathode emission structure, grid structure is positioned at the side of carbon nanotube cathod.When after applying appropriate voltage on the grid, will be by grid lead layer, grid extended line layer and with external voltage be delivered to two layers of grid control one deck and grid control above, thereby form powerful electric field strength on top, carbon nanotube cathod surface, force carbon nano-tube to launch a large amount of electronics, embodied the strong control action of grid structure.Because grid structure is positioned at the side of carbon nanotube cathod structure, is subjected to holding back of grid structure from the electrons emitted Shu Buhui of carbon nanotube cathod institute, directly flies to anode construction, impact fluorescence bisque and send visible light has reduced the operating current of grid structure.Because grid control one deck and grid control in the grid structure present a kind of dual forked type shape for two layers, and cathode conductive layer also is to be positioned on the arc separator upper surface, so just greatly reduce the distance between grid structure and the carbon nanotube cathod structure, helped to reduce operating voltage of grid structure.
Secondly, in described dual forked type side controlled cathode emission structure, carbon nanotube cathod is prepared above the cathode conductive layer, and cathode conductive layer lays respectively at the upper surface of arc separator and arc additional gate and raises on the last end face of layer, greatly increased the electron emission area of carbon nanotube cathod, make more carbon nanotube cathod all participate in the electronics emission, help to improve the display brightness of device.Grid structure and cathode construction height are integrated together, help lend some impetus to the Highgrade integration development of integral device; In described dual forked type side controlled cathode emission structure, do not adopt the special construction manufacturing materials, do not adopt the particular device manufacture craft yet, this has reduced the cost of manufacture of whole flat-panel display device to a great extent, simplified the manufacturing process of device, can carry out broad area device and make, be beneficial to and carry out business-like large-scale production.
Description of drawings
Fig. 1 has provided the vertical structure schematic diagram of dual forked type side controlled cathode emission structure.
Fig. 2 has provided the transversary schematic diagram of dual forked type side controlled cathode emission structure.
Fig. 3 has provided and has had structural representation dual forked type side controlled cathode emission structure, the carbon nanotube field emission flat-panel screens.
Embodiment
The present invention is further described below in conjunction with drawings and Examples, but be not limited to these embodiment.
Described a kind of flat-panel monitor that has dual forked type side controlled cathode emission structure, comprise by anode glass panel [15], cathode glass faceplate [1] and all around glass enclose the sealed vacuum chamber that frame [20] is constituted; Anode conductive layer [16] and the phosphor powder layer [18] of preparation on anode conductive layer are arranged on the anode glass panel; Grid lead layer [3], carbon nano-tube [14] and dual forked type side controlled cathode emission structure are arranged on cathode glass faceplate; Supporting wall structure between anode glass panel and cathode glass faceplate [19] and getter subsidiary component [21].
Described dual forked type side controlled cathode emission structure comprises cathode glass faceplate [1], insulating barrier [2], grid lead layer [3], grid rising layer [4], a grid extended line layer [5], grid control one deck [6], additional gate rising layer [7], grid control two layers of [8], separator [9], negative electrode transition zone [10], cathode conductive layer [11], cathode leg layer [12], cathode coating [13] and carbon nano-tube [14] part.
The backing material of described dual forked type side controlled cathode emission structure is a glass, as soda-lime glass, Pyrex, just cathode glass faceplate; The insulation paste layer that prints on the cathode glass faceplate forms insulating barrier; Metal level above the insulating barrier after the etching forms the grid lead layer; The insulation paste layer that the grid lead layer prints above forms grid rising layer; A grid rising layer cover grid trace layer; There is small sircle hole in the grid rising layer, as the passage of grid extended line layer; The silver slurry layer formation grid extended line layer of printing in the small sircle hole in the grid rising layer; Grid raises, and the metal level after the etching forms grid control one deck above the layer; Grid control one deck presents disc face type shape, depends on a grid rising layer upper surface, and grid control one deck lower surface and grid lead layer are interconnected; The insulation paste layer that grid control one deck prints above forms additional gate rising layer; Additional gate rising layer presents the cylinder type shape, be seated above grid control one deck, and the center of its center and disc face type grid control one deck coincides, layer diameter be less than the diameter of grid control one deck but additional gate raises, thereby expose the grid control one deck that presents annular shape around additional gate raises layer; The additional gate layer upper top that raise is not a plane, but presents the hole that caves inward of a camber, and the raise diameter of layer of camber pit-holes maximum gauge and additional gate is identical, and the raise bottom surface of pushing up plane and camber pit-holes of going up of layer of additional gate coincides; Metal level on the additional gate rising layer side after the etching forms two layers of grid control; Two layers of grid control depend on additional gate and raise on the exterior side wall of layer, and there are not two layers of grid control in all the other positions; Grid control one deck of two layers of grid control and bottom is interconnected; Two layers of insulation paste layer that prints above of grid control one deck and grid control form separator; Separator be looped around additional gate raise layer around, two layers of its lower surface complete cover grid control one deck and grid control, its upper surface then is to present an arcuate shape that caves inward; Form the negative electrode transition zone with the additional gate metal level that layer goes up after the etching on the end face that raises on the separator upper surface; The negative electrode transition zone is covered with the separator upper surface and additional gate rising layer is gone up end face, and links together; Metal level above the negative electrode transition zone after the etching forms cathode conductive layer; Cathode conductive layer then lays respectively at above the negative electrode transition zone on the upper surface of separator, and additional gate raises above the negative electrode transition zone on the layer upper surface, and only is positioned on the arcwall face; Metal level after the etching above the grid rising layer forms the cathode leg layer; Cathode leg layer and negative electrode transition zone, cathode conductive layer are interconnected; The insulation paste layer that the cathode leg layer prints above forms cathode coating; Made of carbon nanotubes is on cathode conductive layer.
Described dual forked type side controlled cathode emission structure is fixed on the cathode glass faceplate; The grid lead layer is metal gold, silver, aluminium, molybdenum, chromium; Grid control one deck is metal gold, silver, copper, aluminium, molybdenum, chromium, tin; Grid control is metal gold, silver, copper, aluminium, molybdenum, chromium, tin for two layers; Cathode leg layer trend is vertical mutually with grid lead layer trend; The cathode leg layer is metal gold, silver, copper, aluminium, molybdenum, chromium, tin, lead, indium; The negative electrode transition zone is metal gold, silver, aluminium, molybdenum, chromium, tin; Cathode conductive layer is metallic iron, cobalt, nickel.
A kind of manufacture craft of flat-panel monitor of dual forked type side controlled cathode emission structure, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]: the dull and stereotyped soda-lime glass of integral body is carried out scribing, produce cathode glass faceplate;
2) making of insulating barrier [2]: printing insulation paste layer on cathode glass faceplate forms insulating barrier behind baking, sintering process;
3) making of grid lead layer [3]: on insulating barrier, prepare a metallic chromium layer, form the grid lead layer after the etching;
4) the grid making of layer [4] that raises: printing insulation paste layer on the grid lead layer forms the grid layer that raises behind baking, sintering process;
5) making of grid extended line layer [5]: printed silver slurry in grid raises layer small sircle hole forms grid extended line layer behind baking, sintering process;
6) making of grid control one deck [6]: on grid rising layer, prepare a metallic chromium layer, form grid control one deck after the etching;
7) the additional gate making of layer [7] that raises: printing insulation paste layer on grid control one deck forms the additional gate layer that raises behind baking, sintering process;
8) making of grid control two layers [8]: on the side of additional gate rising layer, prepare a metallic chromium layer, form two layers of grid control after the etching;
9) making of separator [9]: printing insulation paste layer on two layers of grid control one deck and grid control forms separator behind baking, sintering process;
10) making of negative electrode transition zone [10]: on the upper surface of separator and additional gate raise the upper surface of layer, prepare a metal molybdenum layer, form the negative electrode transition zone after the etching;
11) making of cathode conductive layer [11]: on the negative electrode transition zone, prepare a metal nickel dam, form cathode conductive layer after the etching;
12) making of cathode leg layer [12]: on grid rising layer, prepare a metal molybdenum layer, form the cathode leg layer after the etching;
13) making of cathode coating [13]: printing insulation paste layer on the cathode leg layer forms cathode coating behind baking, sintering process;
14) cleaning surfaces of dual forked type side controlled cathode emission structure is handled: clean is carried out on the surface to dual forked type side controlled cathode emission structure, removes impurity and dust;
15) preparation of carbon nano-tube [14]: with made of carbon nanotubes on cathode conductive layer;
16) reprocessing of carbon nano-tube: carbon nano-tube is carried out reprocessing, improve field emission characteristics;
17) anode glass panel [15] is made: to the dull and stereotyped soda-lime glass scribing of integral body, make the anode glass panel;
18) making of anode conductive layer [16]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
19) making of insulation paste layer [17]: at the non-display area printing insulation paste layer of anode conductive layer;
20) making of phosphor powder layer [18]: the viewing area printing phosphor powder layer on anode conductive layer;
21) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [19] and all around glass enclose frame [20] and be assembled together, and getter [21] is put in the middle of the cavity, fix with glass powder with low melting point.Around face glass, smeared glass powder with low melting point, fixed with clip.
22) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
Described step 19 is specially the non-display area printing insulation paste layer at anode conductive layer, is used to prevent the parasitic electrons emission; Through overbaking (baking temperature: 150 ℃, retention time: 5 minutes) afterwards, be placed on and carry out high temperature sintering (sintering temperature: 580 ℃, retention time: 10 minutes) in the sintering furnace.
Described step 20 is specially the viewing area printing phosphor powder layer on anode conductive layer; In the middle of baking oven, toast (baking temperature: 120 ℃, the retention time: 10 minutes).
The device that described step 22 is specially having assembled carries out following packaging technology: the sample device is put into baking oven toast; Put into sintering furnace and carry out sintering; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the device inside getter bake and disappears, install pin formation finished parts at last additional.
Claims (6)
1, a kind of flat-panel monitor of dual forked type side controlled cathode emission structure, comprise by anode glass panel [15], cathode glass faceplate [1] and all around glass enclose the sealed vacuum chamber that frame [20] is constituted; Be arranged on anode conductive layer [16] and the phosphor powder layer [18] of preparation on anode conductive layer on the anode glass panel; Supporting wall structure between anode glass panel and cathode glass faceplate [19] and getter subsidiary component [21]; It is characterized in that:
Cathode glass faceplate is provided with grid lead layer [3], carbon nano-tube [14] and dual forked type side controlled cathode emission structure;
The backing material of described dual forked type side controlled cathode emission structure is soda-lime glass or Pyrex, i.e. cathode glass faceplate; The insulation paste layer that prints on the cathode glass faceplate forms insulating barrier; Metal level above the insulating barrier after the etching forms the grid lead layer; The insulation paste layer that the grid lead layer prints above forms grid rising layer; Grid rising layer is a cover gate trace layer fully; There is small sircle hole in the grid rising layer, as the passage of grid extended line layer; The silver slurry layer formation grid extended line layer of printing in the small sircle hole in the grid rising layer; Grid raises, and the metal level after the etching forms grid control one deck above the layer; Grid control one deck presents disc face type shape, depends on the upper surface of grid rising layer, and the lower surface and the grid lead layer of grid control one deck are interconnected; The insulation paste layer of the printing above grid control one deck forms additional gate rising layer; Additional gate rising layer presents the cylinder type shape, be seated grid control one deck above, and the center of its center and disc face type grid control one deck coincides, the diameter of layer exposes the grid control one deck that presents annular shape less than the diameter of grid control one deck around additional gate rising layer but additional gate raises; The upper top of additional gate rising layer is not a plane, but present the hole that caves inward of a camber, the maximum gauge of camber pit-holes is identical with the diameter of additional gate rising layer, and the bottom surface of pushing up plane and camber pit-holes of going up of additional gate rising layer coincides; Metal level after the etching on the side of additional gate rising layer forms two layers of grid control; Two layers of grid control depend on additional gate and raise on the exterior side wall of layer, and there are not two layers of grid control in all the other positions; Grid control one deck of two layers of grid control and bottom is interconnected; The insulation paste layer of the printing above two layers of grid control one deck and the grid control forms separator; Separator be looped around additional gate raise layer around, its lower surface is wanted two layers of complete cover grid control one deck and grid control, its upper surface then is to present an arcuate shape that caves inward; Form the negative electrode transition zone with the additional gate metal level that layer goes up after the etching on the end face that raises on the separator upper surface; The negative electrode transition zone is covered with the upper surface of separator and the last end face of additional gate rising layer, and is to link together; Metal level above the negative electrode transition zone after the etching forms cathode conductive layer; Cathode conductive layer then lays respectively at above the negative electrode transition zone on the upper surface of separator, and additional gate raises above the negative electrode transition zone on the layer upper surface, and only is positioned on the arcwall face; Metal level after the etching above the grid rising layer forms the cathode leg layer; Cathode leg layer and negative electrode transition zone, cathode conductive layer all are interconnected; The insulation paste layer of the printing above the cathode leg layer forms cathode coating; Made of carbon nanotubes is on cathode conductive layer.
2, the flat-panel monitor of dual forked type side controlled cathode emission structure according to claim 1 is characterized in that: the fixed position of described dual forked type side controlled cathode emission structure is for being fixed on the cathode glass faceplate; The grid lead layer is one of metal gold, silver, aluminium, molybdenum, chromium; Grid control one deck is one of metal gold, silver, copper, aluminium, molybdenum, chromium, tin; Grid control is one of metal gold, silver, copper, aluminium, molybdenum, chromium, tin for two layers; The trend of the trend of cathode leg layer and grid lead layer is vertical mutually; The cathode leg layer is one of metal gold, silver, copper, aluminium, molybdenum, chromium, tin, lead, indium; The negative electrode transition zone is one of metal gold, silver, aluminium, molybdenum, chromium, tin; Cathode conductive layer is one of metallic iron, cobalt, nickel.
3, a kind of manufacture craft of flat-panel monitor of dual forked type side controlled cathode emission structure is characterized in that, its manufacture craft is as follows:
1) making of cathode glass faceplate [1]:, make cathode glass faceplate to whole plate glass scribing;
2) making of insulating barrier [2]: printing insulation paste layer on cathode glass faceplate forms insulating barrier behind baking, sintering process;
3) making of grid lead layer [3]: make metal level on insulating barrier, etching forms the grid lead layer;
4) the grid making of layer [4] that raises: printing insulation paste layer on the grid lead layer forms the grid layer that raises behind baking, sintering process;
5) making of grid extended line layer [5]: printed silver slurry in grid raises layer small sircle hole forms grid extended line layer behind baking, sintering process;
6) making of grid control one deck [6]: on grid rising layer, prepare metal level, form grid control one deck after the etching;
7) the additional gate making of layer [7] that raises: printing insulation paste layer on grid control one deck forms the additional gate layer that raises behind baking, sintering process;
8) making of grid control two layers [8]: on the side of additional gate rising layer, prepare a metal level, form two layers of grid control after the etching;
9) making of separator [9]: printing insulation paste layer on two layers of grid control one deck and grid control forms separator behind baking, sintering process;
10) making of negative electrode transition zone [10]: on the upper surface of separator and additional gate raise the upper surface of layer, prepare a metal level, form the negative electrode transition zone after the etching;
11) making of cathode conductive layer [11]: on the negative electrode transition zone, prepare a metal level, form cathode conductive layer after the etching;
12) making of cathode leg layer [12]: on grid rising layer, prepare a metal level, form the cathode leg layer after the etching;
13) making of cathode coating [13]: printing insulation paste layer on the cathode leg layer forms cathode coating behind baking, sintering process;
14) cleaning surfaces of dual forked type side controlled cathode emission structure is handled: clean is carried out on the surface to dual forked type side controlled cathode emission structure, removes impurity and dust;
15) preparation of carbon nano-tube [14]: with made of carbon nanotubes on cathode conductive layer;
16) making of anode glass panel [15]:, make the anode glass panel to whole plate glass scribing;
17) making of anode conductive layer [16]: evaporation one deck tin indium oxide rete on the anode glass panel; Form anode conductive layer after the etching;
18) making of insulation paste layer [17]: at anode conductive layer non-display area printing insulation paste layer;
19) making of phosphor powder layer [18]: the viewing area printing phosphor powder layer on anode conductive layer;
20) device assembling: with cathode glass faceplate, anode glass panel, supporting wall structure [19] and all around glass enclose frame [20] and install to together, getter subsidiary component [21] is put in the cavity, fix with glass powder with low melting point;
21) finished product is made: the device that has assembled is carried out packaging technology form finished parts.
4, the manufacture craft of the flat-panel monitor of dual forked type side controlled cathode emission structure according to claim 3, it is characterized in that: described step 18 is specially the non-display area printing insulation paste layer at anode conductive layer, through overbaking, baking temperature: 150 ℃, retention time: 5 minutes, afterwards, be placed on and carry out high temperature sintering in the sintering furnace, sintering temperature: 580 ℃, the retention time: 10 minutes.
5, the manufacture craft of the flat-panel monitor of dual forked type side controlled cathode emission structure according to claim 3 is characterized in that: described step 19 is specially the viewing area printing phosphor powder layer on anode conductive layer; In baking oven, toast baking temperature: 120 ℃, the retention time: 10 minutes.
6, the manufacture craft of the flat-panel monitor of dual forked type side controlled cathode emission structure according to claim 3 is characterized in that: the device that described step 21 is specially having assembled carries out following packaging technology: toast in the middle of the sample device is put into baking oven; Carry out sintering in the middle of putting into sintering furnace; On exhaust station, carry out device exhaust, sealed-off, on the roasting machine that disappears, the getter subsidiary component of device inside bake and disappears, install pin formation finished parts at last additional.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100546241A CN100561654C (en) | 2007-06-19 | 2007-06-19 | The flat-panel monitor of dual forked type side controlled cathode emission structure and manufacture craft thereof |
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| CNB2007100546241A CN100561654C (en) | 2007-06-19 | 2007-06-19 | The flat-panel monitor of dual forked type side controlled cathode emission structure and manufacture craft thereof |
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| CN101093775A CN101093775A (en) | 2007-12-26 |
| CN100561654C true CN100561654C (en) | 2009-11-18 |
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| CN101093775A (en) | 2007-12-26 |
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