CN100544014C - Light emitting diode construction - Google Patents
Light emitting diode construction Download PDFInfo
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- CN100544014C CN100544014C CNB2006101274254A CN200610127425A CN100544014C CN 100544014 C CN100544014 C CN 100544014C CN B2006101274254 A CNB2006101274254 A CN B2006101274254A CN 200610127425 A CN200610127425 A CN 200610127425A CN 100544014 C CN100544014 C CN 100544014C
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Abstract
The invention relates to a kind of light emitting diode construction, it comprises: first substrate; Adhesion coating is formed on first substrate; First ohm of articulamentum is formed on the adhesion coating; Polycrystal layer is formed on first ohm of articulamentum; First insulating barrier is covered in its exposed surface of first ohm of articulamentum and polycrystal layer; First conductive plate and second conductive plate form in first insulating barrier and are electrically connected at an end of first ohm of articulamentum and polycrystal layer.Setting by first groove, second groove makes light emitting diode construction, can make things convenient for light-emitting diode to carry out complicated series/parallel circuit and link, and then can make the light emitting diode construction can be with the kenel of monomer, easier and diversified operation under hyperbaric environment.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, particularly relate to a kind of high-power light emitting diode construction that is applied under the high voltage environment.
Background technology
U.S. Patent Publication the 6th, 853, No. 011, disclosed a kind of luminous polycrystal layer structure, the one end includes the temporary base of an extinction type, and the other end is then by the adhere transparency carrier of a printing opacity of benzocyclobutene.Part with extinction type temporary base is removed then.Then light emitting diode construction forms a connection channel connecting first Ohm contact electrode, and forms an insulated trench and be separated into two parts with the active layer with light emitting diode construction.Then, one second Ohm contact electrode be formed on the cover layer, a jointing metal layer filling in first passage and the success be formed on second Ohm contact electrode.Because two jointing metal layers have identical height, therefore the light emitting diode construction that is produced can be applicable in the flip chip structure more easily.
U.S. Patent Publication the 6th, 998 No. 642, has disclosed a kind of semiconductor structure of two light-emitting diodes under series connection that have.Above-mentioned semiconductor structure has comprised two light-emitting diodes with identical stacked structure, and by insulated trench both is isolated.Above-mentioned stacked structure forms a heat-conducting substrate, an insulating protective layer, a metal adhesion coating, a reflection protection layer, P type ohm connection polycrystal layer, a upper caldding layer, an active layer and a lower caldding layer from the bottom.Belong to two P type metal ohmic contact electrodes of two light-emitting diodes, be formed on one on the interface between reflection protection layer and ohmic contact polycrystal layer, and be embedded in the reflection protection layer.
Above-mentioned stacked structure has one first channel shaped and is formed in the upper caldding layer and electrically to P type electrode.Insulated trench is formed from upper caldding layer to insulating protective layer.Two N type electrodes are formed on the lower caldding layer of two light-emitting diodes.One dielectric layer is deposited the side that fills up insulated trench and cover first groove.So when a metal connector during in order to the N type Ohmic electrode of the P type Ohm contact electrode that connects first light-emitting diode and first light-emitting diode, the stacked structure that it can electrical isolation second light-emitting diode.
No. the 6th, 853,011, above-mentioned U.S. Patent Publication, though can be applied in the flip chip structure,, then can't carry out two connections between light-emitting diode if there is not second substrate (submount), and when doing to cover brilliant processing procedure, need to handle a plurality of wafers, increased process complexity.The 6th, 998, No. 642 cases of above-mentioned U.S. Patent Publication though can carry out two electric connections between light-emitting diode, are utilized metal bond, must can reach by the processing procedure of complexity, therefore all are easy to generate problem on prouctiveness and cost.Moreover because whole insulating barrier is through being arranged at two light-emitting diode intersections, so metal connector only can be connected between two conductive plates, then can't not carry out more complicated circuit layout if there is second substrate.
This shows that above-mentioned existing light emitting diode construction obviously still has inconvenience and defective, and demands urgently further being improved in structure and use.In order to solve the problem of above-mentioned existence, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, this obviously is the problem that the anxious desire of relevant dealer solves.Therefore how to found a kind of novel light emitting diode construction, real one of the current important research and development problem that belongs to, also becoming the current industry utmost point needs improved target.
Because the defective that above-mentioned existing light emitting diode construction exists, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of novel light emitting diode construction, can improve general existing light emitting diode construction, make it have more practicality.Through constantly research, design, and, create the present invention who has practical value finally through after studying sample and improvement repeatedly.
Summary of the invention
Main purpose of the present invention is, overcome the defective that existing light emitting diode construction exists, and provide a kind of novel light emitting diode construction, technical problem to be solved is to make it can carry out mutual connection between light-emitting diode more easily, the feasible more complicated light emitting diode construction monomer that is operable under the hyperbaric environment, can easierly make, thereby be suitable for practicality more.
The object of the invention to solve the technical problems is to adopt following technical scheme to realize.According to a kind of light emitting diode construction that the present invention proposes, it comprises: one first substrate has a first surface and a second surface; One low temperature adhesion coating is formed on this first surface; At least two first ohm of articulamentums are formed on this low temperature adhesion coating; At least two polycrystal layers are formed with one first groove between wantonly two these polycrystal layers, each this polycrystal layer, and it has: a lower caldding layer is formed on this first ohm of articulamentum; One active layer is formed on this lower caldding layer; And a upper caldding layer, be formed on this active layer; One first insulating barrier, be covered in its exposed surface of each this first ohm of articulamentum and each this upper caldding layer, and be formed between wantonly two these first ohm of articulamentums, this first insulating barrier is formed with one first perforate and one second perforate respectively at each this upper caldding layer and its exposed portion place of each this first ohm of articulamentum; At least two first conductive plates are formed at respectively in each this first perforate, and are electrically connected at this upper caldding layer; At least two second conductive plates are formed at respectively in each this second perforate, and are electrically connected at this first ohm of articulamentum; And one second substrate, it has one the 3rd surface, the 3rd surface is formed with at least two the 3rd conductive plates and at least two the 4th conductive plates, this second substrate is formed with many circuit structures again, in order to electrically connect these the 3rd conductive plates and the 4th conductive plate, and each the 3rd conductive plate and the 4th conductive plate are electrically connected at corresponding this first conductive plate and this second conductive plate by solder joint respectively, and this first substrate is that a transparency carrier and this low temperature adhesion coating are a transparent adhesion coating again.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light emitting diode construction, wherein said first ohm of articulamentum are to be P type ohm articulamentum.
Aforesaid light emitting diode construction, wherein said lower caldding layer are to be a P type AlGaInP cover layer, and this upper caldding layer is to be a N type AlGaInP cover layer.
Aforesaid light emitting diode construction, wherein said active layer are to be a single heterojunction structure, a double-heterostructure or a multi-quantum pit structure.
Aforesaid light emitting diode construction is formed with one second ohm of articulamentum between wherein said upper caldding layer and this first conductive plate.
Aforesaid light emitting diode construction, on wherein said the 3rd surface, the position beyond the 3rd conductive plate and the 4th conductive plate is formed with a reflector.
Aforesaid light emitting diode construction on wherein said first insulating barrier, is formed with a reflector.
In addition, the object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of light emitting diode construction that the present invention proposes, it comprises: one first substrate has a first surface and a second surface; One low temperature adhesion coating is formed on this first surface; At least two first ohm of articulamentums are formed on this low temperature adhesion coating; At least two polycrystal layers, each this polycrystal layer, it has: a lower caldding layer is formed on this first ohm of articulamentum; One active layer is formed on this lower caldding layer; One upper caldding layer is formed on this active layer; And one second groove, vertically run through this upper caldding layer and this active layer, again this lower caldding layer of partial penetration; One second insulating barrier is covered on each this upper caldding layer, and is formed between wantonly two these polycrystal layers and wantonly 2 first ohm of articulamentums, and this second insulating barrier reaches the second groove inboard on this upper caldding layer, be formed with one the 3rd perforate and one the 4th perforate respectively; At least two the 5th conductive plates are formed at respectively in each the 3rd perforate, and are electrically connected at this upper caldding layer; At least two the 6th conductive plates are formed at respectively in each the 4th perforate, and it has an extension of downward extension, and this extension vertically runs through this polycrystal layer, and are electrically connected at this first ohm of articulamentum; And one second substrate, it has one the 3rd surface, the 3rd surface is formed with at least two the 3rd conductive plates and at least two the 4th conductive plates, this second substrate is formed with many circuit structures again, in order to electrically connect these the 3rd conductive plates and the 4th conductive plate, and each the 3rd conductive plate and the 4th conductive plate are electrically connected at corresponding the 5th conductive plate and the 6th conductive plate by solder joint respectively, and this first substrate is that a transparency carrier and this low temperature adhesion coating are a transparent adhesion coating again; Wherein the apparent height of these the 5th conductive plates and these the 6th conductive plates is the height for par.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid light emitting diode construction, wherein said first ohm of articulamentum are to be P type ohm articulamentum.
Aforesaid light emitting diode construction, wherein said lower caldding layer are to be a P type AlGaInP cover layer, and this upper caldding layer is to be a N type AlGaInP cover layer.
Aforesaid light emitting diode construction, wherein said active layer are to be a single heterojunction structure, a double-heterostructure or a multi-quantum pit structure.
Aforesaid light emitting diode construction is formed with one second ohm of articulamentum between wherein said upper caldding layer and the 5th conductive plate.
Aforesaid light emitting diode construction, on wherein said second substrate, the position beyond the 3rd conductive plate and the 4th conductive plate is formed with a reflector.
Aforesaid light emitting diode construction on wherein said second insulating barrier, is formed with a reflector.
Aforesaid light emitting diode construction, it further comprises one second conductor layer, it is formed with at least one conductor and is covered on this second insulating barrier, and the two ends of each this conductor are electrically connected at the 5th conductive plate or the 6th conductive plate of different luminescence units respectively.
The present invention compared with prior art has tangible advantage and beneficial effect.By technique scheme, light emitting diode construction of the present invention has following advantage and effect at least:
1, the present invention is by the setting of first groove, second groove, make light emitting diode construction, can make things convenient for light-emitting diode to carry out complicated series/parallel circuit and link, and then can make the light emitting diode construction can be with kenel easier and diversified operation under hyperbaric environment of monomer.
2, the present invention can carry out the mutual connection between light-emitting diode more easily, and the feasible more complicated light emitting diode construction monomer that is operable under the hyperbaric environment can easierly be made, thereby is suitable for practicality more.
3, manufacture of semiconductor of the present invention is simple, and except second substrate needed new light shield, light emitting diode construction can be continued to use existing processing procedure, and manufacturing cost also reduces relatively, meets cost benefit, quite has the value of industry.
4, the identical light emitting diode construction of the present invention can carry out different connecting circuit (interconnection) layout by second substrate, the variation and the design of the connecting circuit of feasible complexity, and more simple the reaching that become reached easily.
5, the present invention engages compared to high-temperature metal, utilizes the low temperature adhesion coating and has low temperature, high acceptance rate and effect cheaply, meets cost benefit, is suitable for industrial circle and extensively promotes the use of.
6, after the present invention simplified the connecting circuit of complexity, the easier wafer monomer that produces the high-voltage diode that volume is little, brightness is high made that the volume of diode illuminating device is littler, weight is lighter.
In sum, the present invention is relevant a kind of light emitting diode construction, and it comprises: first substrate; Adhesion coating is formed on first substrate; First ohm of articulamentum is formed on the adhesion coating; Polycrystal layer is formed on first ohm of articulamentum; First insulating barrier is covered in its exposed surface of first ohm of articulamentum and polycrystal layer; First conductive plate and second conductive plate form in first insulating barrier and are electrically connected at an end of first ohm of articulamentum and polycrystal layer.Setting by first groove, second groove makes light emitting diode construction, can make things convenient for light-emitting diode to carry out complicated series/parallel circuit and link, and then can make the light emitting diode construction can be with kenel easier and diversified operation under hyperbaric environment of monomer.The present invention has above-mentioned plurality of advantages and practical value, no matter it all has bigger improvement on product structure or function, obvious improvement is arranged technically, and produced handy and practical effect, and more existing light emitting diode construction has the outstanding effect of enhancement, thereby being suitable for practicality more, and having the extensive value of industry, really is a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Figure 1A is one first substrate and the still unconjugated embodiment schematic diagram of preceding processing procedure light emitting diode construction.
Figure 1B is one first substrate and embodiment schematic diagram after preceding processing procedure light emitting diode construction combines.
Fig. 1 C is with the embodiment stereogram after the temporary base of Figure 1B and the etch stop layer removal.
Fig. 2 is a light emitting diode construction of the present invention, the cutaway view of the embodiment after it is finished the unit and cuts apart.
Fig. 3 A is that Fig. 2 carries out the schematic diagram of etched manufacture method embodiment for the first time.
Fig. 3 B carries out the schematic diagram of etched manufacture method embodiment for the second time once more after Fig. 3 A finishes.
Fig. 4 is the embodiment cutaway view after Fig. 2 further finishes first insulating barrier and conductive plate.
Fig. 5 A is the cutaway view of light emitting diode construction of the present invention further combined with the embodiment of one second substrate.
Fig. 5 B is the vertical view of Fig. 5 A embodiment.
Fig. 5 C is the equivalent circuit diagram of Fig. 5 A.
Fig. 6 A is a light emitting diode construction of the present invention, and it further forms the cutaway view of the embodiment of one first conductor layer.
Fig. 6 B is the vertical view of Fig. 6 A embodiment.
Fig. 7 is the light emitting diode construction of present embodiment, has finished that the unit is cut apart, polycrystal layer is cut apart and the cutaway view of the embodiment of second groove after making.
Fig. 8 is the cutaway view of light emitting diode construction of the present invention further combined with the embodiment of one second substrate.
Fig. 9 is the cutaway view that light emitting diode construction of the present invention further forms the embodiment of one second conductor layer.
Figure 10 A to Figure 10 G is respectively the circuit diagram of the embodiment of various baroluminescence diodes.
10: preceding processing procedure light emitting diode construction 11: temporary base
12: etch stop layer 20: light emitting diode construction
Substrate 211 in 21: the first: first surface
212: second surface 22: adhesion coating
23 ': the first ohm of articulamentum of 23: the first ohm of articulamentums
231: exposed portion 24: polycrystal layer
241: lower caldding layer 242: active layer
243: 25: the first insulating barriers of upper caldding layer
Perforate in 251: the first perforate in 252: the second
27: the second conductive plates of 26: the first conductive plates
28: 291: the first grooves of light-emitting diode
293: the first conductor layers of 292: the second ohm of articulamentums
30: 31: the second insulating barriers of light emitting diode construction
33: the six conductive plates of 32: the five conductive plates
331: 34: the second grooves of extension
Perforate in 35: the three perforate in 36: the four
50: the second substrates of 37: the second conductor layers
52: the three conductive plates in 51: the three surfaces
A1, A2, A3...: unit A-A: hatching
B-B: hatching
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of light emitting diode construction, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
About feature of the present invention and execution mode, cooperate diagram to do being described in detail as follows of most preferred embodiment now.In following examples, each of light emitting diode construction layer structure made with existing known semiconductor forming technique, so its details will repeat no more.For fear of tediously long description, special again with " etch process " or words such as " etching modes ", be defined as the abbreviation of containing whole complete gold-tinted processing procedure.Light-emitting diode of the present invention again is the array that can form multidimensional, is not the quantity that is defined among the embodiment.More than explanation is chatted bright hereby in advance.
[first embodiment]
See also shown in Figure 1A, Figure 1B, Fig. 1 C, Figure 1A is existing first a known substrate 21 and the still unconjugated embodiment schematic diagram of preceding processing procedure light emitting diode construction 10, Figure 1B is one first substrate 21 and embodiment schematic diagram after preceding processing procedure light emitting diode construction 10 combines, and Fig. 1 C is the embodiment stereogram after the temporary base 11 of Figure 1B and etch stop layer 12 are removed.
The manufacturing of general light emitting diode construction is in the manufacture of semiconductor mode, does not cut apart and do not finish the preceding processing procedure light emitting diode construction 10 of other insulating barrier and conductive plate with carrying out the unit as yet, is formed on the wafer (wafer).But the actual leds structure because wafer thickness is blocked up and have lighttight characteristic, therefore can't be applied and necessary the removal when using.So wafer is just made in the light emitting diode construction process a provisional substrate, just temporary base 11.
In the general method of removing temporary base 11, etching mode is a kind of of the most normal use, in order to protect light emitting diode construction at etching process, can excessively not cause the damage of light emitting diode construction because of etching, so an etch stop layer 12 can be set.Major part also can be etched in the process of crystal round etching for this etch stop layer 12, by the effect of etch stop layer 12, can reach the effect of protection light emitting diode construction.Finish after the above-mentioned processing procedure light emitting diode construction of processing procedure before can producing.
See also shown in Fig. 2 to Fig. 6 C, present embodiment is to be a kind of light emitting diode construction 20, and it comprises: one first substrate 21, an adhesion coating 22, at least two first ohm of articulamentums 23, at least two polycrystal layers 24, one first insulating barrier 25, at least two first conductive plates 26 and at least two second conductive plates 27.
The first above-mentioned substrate 21, it has a first surface 211 and a second surface 212, and this first substrate 21 mainly is in order to support whole light emitting diode construction 20.This first substrate 21 can be the substrate of a monocrystal, a polycrystal or a non-crystal structure, for example glass (glass), sapphire (sapphire), carborundum (SiC), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), zinc selenide (ZnSe), zinc sulphide (ZnS) or selenium sulfuration americium (AmSSe) ... wait the made substrate of material.In addition, first substrate 21 can be a transparency carrier or a nontransparent substrate, it mainly is to consider according to the design in the light direction of light emitting diode construction 20 or reflector, if will be guided out the two-way bright dipping of up/down simultaneously, then first substrate 21 is necessary for a transparency carrier.
Above-mentioned adhesion coating 22 is formed on the first surface 211, and it is in order in conjunction with first substrate 21 and first ohm of articulamentum 23.Adhesion coating 22 is to be selected from a benzocyclobutene (B-stagedbenzocyclobutene, BCB), an epoxy resin (epoxy), a silica gel (silicone), a polymethyl methacrylate (polymethyl methacry, PMMA), a polymer (polymer) and a rotary coating glass (Spin-on glass, SOG) ... wait a kind of material wherein.Adhesion coating 22 can be a transparent adhesion coating 22 or a nontransparent adhesion coating 22, it is also according to the design in the light direction of light emitting diode construction 20 or reflector and consider, if will be guided out the two-way bright dipping of up/down simultaneously, then adhesion coating 22 is necessary for a transparent adhesion coating 22.
Seeing also shown in Figure 2ly, is light emitting diode construction 20 of the present invention, the cutaway view of the embodiment after it is finished the unit and cuts apart.All light-emitting diodes 28 of the present invention, be to comprise first ohm of articulamentum 23 and polycrystal layer 24, it all is arranged on identical first substrate 21 and adhesion coating 22, therefore the unit is cut apart only needs to cut apart at first ohm of articulamentum 23 and polycrystal layer 24, and forms for example unit such as A1, A2, A3... or B1 as shown in Figure 6A, B2, B3....
First ohm of above-mentioned articulamentum 23 is formed on the adhesion coating 22, and first ohm of articulamentum 23 can be P type ohm articulamentum, and first ohm of articulamentum 23 of moulding on wafer originally, and it can be by etching mode, to distinguish different unit.
Above-mentioned polycrystal layer 24, it is a light-emitting diode 28 monomers, its also by etched mode to distinguish different unit.Polycrystal layer 24 also by etch process to form first groove 291.The formation of this first groove 291, to make ohm articulamentum 23 of winning produce a local exposed exposed portion 231, thereby the conveniently setting of second conductive plate 27, also because the setting of second conductive plate 27, so light-emitting diode 28 of different units, can easily carry out the design of series/parallel, thereby make that the light-emitting diode 28 of high pressure is made easily.
See also shown in Fig. 3 A, Fig. 3 B, Fig. 3 A is that Fig. 2 carries out the schematic diagram of etched manufacture method embodiment for the first time, and Fig. 3 B carries out the schematic diagram of etched manufacture method embodiment for the second time once more after Fig. 3 A finishes.The unit of first ohm of articulamentum 23 is cut apart and the making of first groove 291, can reach it by different etching steps.In numerous etching steps, etching for the first time is to etch earlier and two the first ohm breach of the identical size of interlayer and relative position even, etching for the second time, be the size that etches first groove 291 after the etching first time again, this kind mode can make processing procedure comparatively easy.
Each polycrystal layer 24, it has at least: a lower caldding layer 241, an active layer 242 and a upper caldding layer 243.Each lower caldding layer 241 is formed on one first ohm of articulamentum 23, and lower caldding layer 241 is to be P type AlGaInP (AlGa InP) cover layer.Active layer (activelayer) 242, be formed on the lower caldding layer 241, it can be a single heterojunction structure (SingleHetero-structure, SH), a double-heterostructure (Double Hetero-structure, DH) or a multi-quantum pit structure (Multiple Quantum Wells, MQW).Upper caldding layer 243 is formed on the active layer 242, and upper caldding layer 243 can be a N type AlGaInP cover layer.26 of the upper caldding layer 243 and first conductive plates also can further be formed with one second ohm of articulamentum 292.
Seeing also shown in Figure 4ly, is the cutaway view that Fig. 2 further finishes the embodiment behind first insulating barrier 25 and the conductive plate.The first above-mentioned insulating barrier 25 is materials of silica (SiO) for example, and it is covered in each first ohm of articulamentum 23 and each upper caldding layer 243 its exposed surfaces, and is formed at 23 of wantonly 2 first ohm of articulamentums.By the setting of first insulating barrier 25, except the light-emitting diode 28 that can make different units isolate fully do not interact, also can guarantee that light-emitting diode 28 is not subjected to external environment, for example: the influence of aqueous vapor or moisture and detracting the life-span.First insulating barrier 25 is at each upper caldding layer 243 and each first ohm of articulamentum 23 its exposed portion 231 places, be formed with one first perforate 251 and one second perforate 252 respectively, this first perforate 251 and second perforate 252 are after first insulating barrier 25 completes, and are made with etching mode again.
The first above-mentioned conductive plate 26 is formed at respectively in first perforate 251 of each unit, and is electrically connected at corresponding upper caldding layer 243.
The second above-mentioned conductive plate 27 is formed at respectively in second perforate 252 of each unit, and is electrically connected at corresponding first ohm of articulamentum 23.
, make polycrystal layer 24 can receive electric power and produce luminous effect so that electric power to be provided by the setting of first conductive plate 26 and second conductive plate 27.
When light emitting diode construction 20 is designed to simultaneously go up (face up) structure.Be designed to a transparency carrier with first substrate 21 this moment, and adhesion coating 22 is designed to a transparent adhesion coating 22, and on the second surface 212 of first substrate 21, form a reflector (not shown), can polycrystal layer 24 issued lights be reflected by the reflector, and so can make light emitting diode construction 20 reach preferable light extraction efficiency.In addition, also can only adhesion coating 22 be designed to a transparent adhesion coating 22, and the reflector (not shown) is formed between first substrate 21 and the adhesion coating 22, so also can reaches the effect of light reflection, the same light emitting diode construction 20 that makes reaches preferable light extraction efficiency.
See also shown in Fig. 5 A, Fig. 5 B, Fig. 5 C, Fig. 5 A is that light emitting diode construction 20 of the present invention is further combined with the cutaway view of the embodiment that one second substrate 50 is arranged along A-A hatching among Fig. 5 B, Fig. 5 B is the vertical view of Fig. 5 A embodiment, and Fig. 5 C is the equivalent circuit diagram of Fig. 5 A.This light emitting diode construction 20 further comprises one second substrate 50, so can produce a flip chip structure (flip-chip).In flip chip structure, first substrate 21 be for a transparency carrier and adhesion coating 22 be to be a transparent adhesion coating 22.It has one the 3rd surface 51 at least second substrate 50, the 3rd surface 51 is formed with at least two the 3rd conductive plate 52 and at least two the 4th conductive plates 53, each the 3rd conductive plate 52 and the 4th conductive plate 53 are electrically connected at corresponding first conductive plate 26 and second conductive plate 27 by solder joint 60 respectively.53 of the 3rd conductive plate 52 and the 4th conductive plates, except can be directly with the enlarged areas of conductive plate, and make outside the electric connection each other, also can be formed with many circuit structure (not shown), so that the 3rd conductive plate 52 and 53 electric connections of the 4th conductive plate at second substrate 50.Can form complicated circuit structure by above-mentioned connected mode.Use the advantage of second substrate 50, will make the serial/parallel circuit of 28 of different light-emitting diodes be able on second substrate 50, carry out.Because the area and the thickness of second substrate 50 can have bigger elasticity, therefore be enough to deal with very complicated circuit structure.When the circuit structure of complexity can be put into practice, the application of light emitting diode construction 20 will have more diversity.
This second substrate 50, its can for a silicon substrate (silicon substrate), one printed circuit board (PCB)/printed circuit multilayer plate (Printed Circuit Board, PCB) or a ceramic substrate (ceramicsubstrate).For example: aluminium oxide (Al
2O
3), aluminium nitride (AlN), beryllium oxide (BeO), low temperature co-fired multi-layer ceramics (Low Temperature Cofired Ceramic, LTCC) or the high temperature co-firing multi-layer ceramics (High Temperature Cofired Ceramic, HTCC) ... wait substrate.
In the design of flip chip structure, in order to make light-emitting diode 28 preferable light extraction efficiency is arranged, can be on the 3rd surface 51 of second substrate 50, the position beyond the 3rd conductive plate 52 and the 4th conductive plate 53 further forms a reflector.Also can on first insulating barrier 25, just be formed with a reflector on the surface that first insulating barrier 25 exposes.
Each above-mentioned reflector is to can be selected from an aluminium (Al), a silver medal (Ag) and a gold medal (Au) ... wait one of them material to be made.Must be noted that when making the reflector, when if the reflector is a conductive material, the reflector can not contact with the 3rd conductive plate 52 or the 4th conductive plate 53, also can not contact with first conductive plate 26 or second conductive plate 27, and the reflector preferably can keep certain clearance with each conductive plate, to avoid producing between each conductive plate the phenomenon of short circuit.
See also shown in Fig. 6 A, Fig. 6 B, Fig. 6 A is a light emitting diode construction 20 of the present invention, and it further forms the cutaway view of the embodiment of one first conductor layer 293 along the B-B hatching of 6B figure, and Fig. 6 B is the vertical view of Fig. 6 A embodiment.Light emitting diode construction 20, it advances one and includes one first conductor layer 293, and it is formed with at least one conductor and is covered on first insulating barrier 25, and the two ends of each conductor are electrically connected at second conductive plate 27 and first conductive plate 26 of different units respectively.So, can easily different light-emitting diode 28 be connected/parallel connection.By the support of first insulating barrier 25, make the conductor layer 293 of winning also can carry out complicated circuit layout design.
[second embodiment]
See also shown in Fig. 7 to Fig. 9 B, present embodiment is to be a kind of light emitting diode construction 30, and it comprises: one first substrate 21, an adhesion coating 22, at least two first ohm of articulamentums 23 ', at least two polycrystal layers 24, one second insulating barrier 31, at least two the 5th conductive plates 32 and at least two the 6th conductive plates 33.
The light emitting diode construction 30 of this example can use the processing procedure of similar first embodiment Figure 1A to Fig. 1 C, combines with preceding processing procedure light-emitting diode 28 on being formed at wafer scribbling first substrate 21 of adhesion coating 22.And then temporary base 11 and etch stop layer 12 removed in modes such as etchings, with the light emitting diode construction 30 that obtains not carrying out as yet cutting apart the unit.
The first above-mentioned substrate 21 has a first surface 211 and a second surface 212, the first substrates 21 mainly are in order to support whole light emitting diode construction 30.First substrate 21 can be the substrate of a monocrystal, a polycrystal or a non-crystal structure, for example glass, sapphire, carborundum, gallium phosphide, gallium arsenide phosphide, zinc selenide, zinc sulphide or selenium sulfuration americium ... wait the made substrate of material.In addition, first substrate 21 can be a transparency carrier or a nontransparent substrate, it mainly is to consider according to the design in the light direction of light emitting diode construction 30 or reflector, if will be guided out the two-way bright dipping of up/down simultaneously, then first substrate 21 is necessary for a transparency carrier.
Above-mentioned adhesion coating 22 is formed on the first surface 211, and it is in order in conjunction with first substrate 21 and first ohm of articulamentum 23 '.This adhesion coating 22 is to be selected from one of them material such as a benzocyclobutene, an epoxy resin, a silica gel, a polymethyl methacrylate, a polymer and a rotary coating glass.Adhesion coating 22 is to be a transparent adhesion coating 22 or a nontransparent adhesion coating 22, it is also according to the design in the light direction of light emitting diode construction 30 or reflector and consider, if will be guided out the two-way bright dipping of up/down simultaneously, then adhesion coating 22 is necessary for a transparent adhesion coating 22.
Seeing also shown in Figure 7ly, is the light emitting diode construction 30 of present embodiment, has finished that the unit is cut apart, polycrystal layer 24 is cut apart and the cutaway view of the embodiment of second groove 34 after making.Also shared first substrate 21 of each light emitting diode construction 30 of present embodiment and adhesion coating 22, so the unit also cuts apart and only cuts apart at first ohm of articulamentum 23 ' and polycrystal layer 24, also can form for example unit such as A1, A2, A3... after cutting apart.
First ohm of above-mentioned articulamentum 23 ' is to be formed on the adhesion coating 22.This first ohm of articulamentum 23 ' can be P type ohm articulamentum.First ohm of articulamentum 23 ' of moulding on wafer originally, it can be by etching mode, to distinguish different unit.
Above-mentioned polycrystal layer 24, it is a light-emitting diode 28 monomers, its also by etched mode to distinguish different unit.Each polycrystal layer 24, it has: a lower caldding layer 241, an active layer 242, a upper caldding layer 243 and one second groove 34.
This each lower caldding layer 241 is formed on one first ohm of articulamentum 23 ', and lower caldding layer 241 is to be a P type AlGaInP cover layer.
This active layer 242 is formed on the lower caldding layer 241, and it can be a single heterojunction structure, a double-heterostructure or a multi-quantum pit structure.
This upper caldding layer 243 is formed on the active layer 242, and upper caldding layer 243 can be a N type AlGaInP cover layer.
This second groove 34, it is made with etching mode, second groove 34 vertically runs through upper caldding layer 243 and active layer 242, the partial penetration lower caldding layer 241 again, by the gap of second groove 34, can make the active layer 242 of second groove, 34 both sides, the effect that upper caldding layer 243 produces electrical isolation.For the convenience of making on the processing procedure, the mode that second groove 34 can center on is formed at the periphery of the 6th conductive plate 33, so that by effective electrical isolation, making the extension 331 of the 6th conductive plate 33 smoothly electric power to be conducted to first, active layer 242 energy beat up nurse articulamentum 23.In order to make the easier operation of successive process, therefore when making second insulating barrier 31, can second insulating barrier 31 will be filled up in the lump in second groove 34 again.
The second above-mentioned insulating barrier 31 is materials of silica for example, and it is covered in each upper caldding layer 243 its exposed surface, and is formed at wantonly two polycrystal layers 24 and reaches between wantonly 2 first ohm of articulamentums 23 '.By the setting of second insulating barrier 31, except the light-emitting diode 28 that can make different units isolate fully do not interact, also can guarantee that light-emitting diode 28 is not subjected to external environment, for example: the influence of aqueous vapor or moisture and detracting the life-span.Second insulating barrier 31 reaches second groove, 34 inboards on upper caldding layer 243, being formed with one the 3rd perforate 35 and one the 4th perforate, 36, the three perforates 35 and the 4th perforate 36 respectively is after second insulating barrier 31 completes, and is made with etching mode again.
The 5th above-mentioned conductive plate 32 is formed at respectively in each the 3rd perforate 35, and is electrically connected at corresponding upper caldding layer 243.Again, 32 of upper caldding layer 243 and the 5th conductive plates can form one second ohm of articulamentum 292 again.
The 6th above-mentioned conductive plate 33 is formed at respectively in each the 4th perforate 36, and it has an extension 331 of downward extension, and this extension 331 vertically runs through polycrystal layer 24, and is electrically connected at corresponding first ohm of articulamentum 23 '., make polycrystal layer 24 can receive electric power and produce luminous effect so that electric power to be provided by the setting of the 5th conductive plate 32 and the 6th conductive plate 33.
When light emitting diode construction 30 is designed to simultaneously go up structure.Be designed to a transparency carrier with first substrate 21 this moment, and adhesion coating 22 is designed to a transparent adhesion coating 22, and on the second surface 212 of first substrate 21, form a reflector, can polycrystal layer 24 issued lights be reflected by the reflector, and so can make light emitting diode construction 30 reach preferable light extraction efficiency.In addition, also can only adhesion coating 22 be designed to a transparent adhesion coating 22, and the reflector is formed between first substrate 21 and the adhesion coating 22, so also can reach the effect of light reflection, the same light emitting diode construction 30 that makes reaches preferable light extraction efficiency.
Seeing also shown in Figure 8ly, is the cutaway view of light emitting diode construction 30 of the present invention further combined with the embodiment of one second substrate.Light emitting diode construction 30 further comprises one second substrate 50, so can produce a flip chip structure.In flip chip structure, first substrate 21 be for a transparency carrier and adhesion coating 22 be to be a transparent adhesion coating 22.It has one the 3rd surface 51 at least second substrate 50, the 3rd surface 51 is formed with at least two the 3rd conductive plate 52 and at least two the 4th conductive plates 53, each the 3rd conductive plate 52 and the 4th conductive plate 53 are electrically connected at corresponding the 5th conductive plate 32 and the 6th conductive plate 33 by solder joint 60 respectively.53 of the 3rd conductive plate 52 and the 4th conductive plates, except can be directly with the enlarged areas of conductive plate, and make outside the electric connection each other, also can be formed with many circuit structure (not shown), so that the 3rd conductive plate 52 and 53 electric connections of the 4th conductive plate at second substrate 50.Can form complicated circuit structure by above-mentioned connected mode.Use the advantage of second substrate 50, will make the serial/parallel circuit of 28 of different light-emitting diodes be able on second substrate 50, carry out.Because the area and the thickness of second substrate 50 can have bigger elasticity, therefore be enough to deal with very complicated circuit structure.When the circuit structure of complexity can be put into practice, the application of light emitting diode construction 30 will have more diversity.
This second substrate 50 is to be a silicon substrate, one printed circuit board (PCB)/printed circuit multilayer plate or a ceramic substrate.For example: aluminium oxide, aluminium nitride, the low temperature co-fired multi-layer ceramics of beryllium oxide or high temperature co-firing multi-layer ceramics ... wait substrate.
In the design of flip chip structure, in order to make light-emitting diode 28 preferable light extraction efficiency is arranged, can be on the 3rd surface 51 of second substrate 50, the position beyond the 3rd conductive plate 52 and the 4th conductive plate 53 further is formed with a reflector.Perhaps also can on second insulating barrier 31, just be formed with a reflector on the surface that second insulating barrier 31 exposes.
Each above-mentioned reflector is to can be selected from an aluminium, a silver medal and a gold medal ... wait one of them material to be made.Must be noted that when making the reflector, when if the reflector is a conductive material, the reflector can not contact with the 3rd conductive plate 52 or the 4th conductive plate 53, also can not contact with the 5th conductive plate 32 or the 6th conductive plate 33, and the reflector preferably can keep certain clearance with each conductive plate, to avoid producing between each conductive plate the phenomenon of short circuit.
In order to interconnect more easily between each light-emitting diode 28 that makes light emitting diode construction 30, perhaps in order to make the light emitting diode construction 30 and second substrate 50, in conjunction with more smooth and complete, the apparent height of all the 5th conductive plate 32 the 6th conductive plates 33, be height, so will help applying on the processing procedure for par.
Seeing also shown in Figure 9ly, is the cutaway views that light emitting diode construction of the present invention 30 further forms the embodiment of one second conductor layers 37.Light emitting diode construction 30 further comprises one second conductor layer 37, and it is formed with at least one conductor and is covered on second insulating barrier 31, and the two ends of each conductor are electrically connected at the 5th conductive plate 32 or the 6th conductive plate 33 of different units respectively.So can easily different light-emitting diode 28 be connected/parallel connection.By the support of second insulating barrier 31, make second conductor layer 37 also can carry out complicated circuit layout design.
Seeing also shown in Figure 10 A to Figure 10 G, is respectively the circuit diagram of the embodiment of various baroluminescence diodes 28.Light emitting diode construction of the present invention, because the first complete insulating barrier 25 and second insulating barrier 31 are arranged, therefore can on each insulating barrier, produce the identical or similar complicated circuit of Figure 10 A to Figure 10 G, especially use second substrate 50 and when forming flip chip structure, interlock circuit reach and more easy.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (15)
1, a kind of light emitting diode construction is characterized in that it comprises:
One first substrate has a first surface and a second surface;
One low temperature adhesion coating is formed on this first surface;
At least two first ohm of articulamentums are formed on this low temperature adhesion coating;
At least two polycrystal layers are formed with one first groove between wantonly two these polycrystal layers, each this polycrystal layer, and it has:
One lower caldding layer is formed on this first ohm of articulamentum;
One active layer is formed on this lower caldding layer; And
One upper caldding layer is formed on this active layer;
One first insulating barrier, be covered in its exposed surface of each this first ohm of articulamentum and each this upper caldding layer, and be formed between wantonly two these first ohm of articulamentums, this first insulating barrier is formed with one first perforate and one second perforate respectively at each this upper caldding layer and its exposed portion place of each this first ohm of articulamentum;
At least two first conductive plates are formed at respectively in each this first perforate, and are electrically connected at this upper caldding layer;
At least two second conductive plates are formed at respectively in each this second perforate, and are electrically connected at this first ohm of articulamentum; And
One second substrate, it has one the 3rd surface, the 3rd surface is formed with at least two the 3rd conductive plates and at least two the 4th conductive plates, this second substrate is formed with many circuit structures again, in order to electrically connect these the 3rd conductive plates and the 4th conductive plate, and each the 3rd conductive plate and the 4th conductive plate are electrically connected at corresponding this first conductive plate and this second conductive plate by solder joint respectively, and this first substrate is that a transparency carrier and this low temperature adhesion coating are a transparent adhesion coating again.
2, light emitting diode construction according to claim 1 is characterized in that wherein said first ohm of articulamentum is to be P type ohm articulamentum.
3, light emitting diode construction according to claim 1 it is characterized in that wherein said lower caldding layer is to be a P type AlGaInP cover layer, and this upper caldding layer is to be a N type AlGaInP cover layer.
4, light emitting diode construction according to claim 1 is characterized in that wherein said active layer is to be a single heterojunction structure, a double-heterostructure or a multi-quantum pit structure.
5, light emitting diode construction according to claim 1 is characterized in that being formed with between wherein said upper caldding layer and this first conductive plate one second ohm of articulamentum.
6, light emitting diode construction according to claim 1 is characterized in that on wherein said the 3rd surface, and the position beyond the 3rd conductive plate and the 4th conductive plate is formed with a reflector.
7, light emitting diode construction according to claim 1 is characterized in that being formed with a reflector on wherein said first insulating barrier.
8, a kind of light emitting diode construction is characterized in that it comprises:
One first substrate has a first surface and a second surface;
One low temperature adhesion coating is formed on this first surface;
At least two first ohm of articulamentums are formed on this low temperature adhesion coating;
At least two polycrystal layers, each this polycrystal layer, it has:
One lower caldding layer is formed on this first ohm of articulamentum;
One active layer is formed on this lower caldding layer;
One upper caldding layer is formed on this active layer; And
One second groove vertically runs through this upper caldding layer and this active layer, again this lower caldding layer of partial penetration;
One second insulating barrier is covered on each this upper caldding layer, and is formed between wantonly two these polycrystal layers and wantonly 2 first ohm of articulamentums, and this second insulating barrier reaches the second groove inboard on this upper caldding layer, be formed with one the 3rd perforate and one the 4th perforate respectively;
At least two the 5th conductive plates are formed at respectively in each the 3rd perforate, and are electrically connected at this upper caldding layer;
At least two the 6th conductive plates are formed at respectively in each the 4th perforate, and it has an extension of downward extension, and this extension vertically runs through this polycrystal layer, and are electrically connected at this first ohm of articulamentum; And
One second substrate, it has one the 3rd surface, the 3rd surface is formed with at least two the 3rd conductive plates and at least two the 4th conductive plates, this second substrate is formed with many circuit structures again, in order to electrically connect these the 3rd conductive plates and the 4th conductive plate, and each the 3rd conductive plate and the 4th conductive plate are electrically connected at corresponding the 5th conductive plate and the 6th conductive plate by solder joint respectively, and this first substrate is that a transparency carrier and this low temperature adhesion coating are a transparent adhesion coating again;
Wherein the apparent height of these the 5th conductive plates and these the 6th conductive plates is the height for par.
9, light emitting diode construction according to claim 8 is characterized in that wherein said first ohm of articulamentum is to be P type ohm articulamentum.
10, light emitting diode construction according to claim 8 it is characterized in that wherein said lower caldding layer is to be a P type AlGaInP cover layer, and this upper caldding layer is to be a N type AlGaInP cover layer.
11, light emitting diode construction according to claim 8 is characterized in that wherein said active layer is to be a single heterojunction structure, a double-heterostructure or a multi-quantum pit structure.
12, light emitting diode construction according to claim 8 is characterized in that being formed with between wherein said upper caldding layer and the 5th conductive plate one second ohm of articulamentum.
13, light emitting diode construction according to claim 8 is characterized in that on wherein said second substrate, and the position beyond the 3rd conductive plate and the 4th conductive plate is formed with a reflector.
14, light emitting diode construction according to claim 8 is characterized in that being formed with a reflector on wherein said second insulating barrier.
15, light emitting diode construction according to claim 8, it is characterized in that it further comprises one second conductor layer, it is formed with at least one conductor and is covered on this second insulating barrier, and the two ends of each this conductor are electrically connected at the 5th conductive plate or the 6th conductive plate of different luminescence units respectively.
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| CNB2006101274254A CN100544014C (en) | 2006-09-13 | 2006-09-13 | Light emitting diode construction |
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| CNB2006101274254A CN100544014C (en) | 2006-09-13 | 2006-09-13 | Light emitting diode construction |
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| KR101007130B1 (en) | 2009-02-18 | 2011-01-10 | 엘지이노텍 주식회사 | Light emitting device and method for fabricating the same |
| CN101859757B (en) * | 2009-04-07 | 2014-04-09 | 裕星企业有限公司 | Stack light-emitting diode chip structure and manufacturing method thereof |
| CN102201427B (en) * | 2010-03-22 | 2013-03-27 | 晶元光电股份有限公司 | Light emitting element |
| CN102544048A (en) * | 2010-12-27 | 2012-07-04 | 同方光电科技有限公司 | High-power GaN-base light-emitting diode and manufacturing method thereof |
| US8962358B2 (en) * | 2011-03-17 | 2015-02-24 | Tsmc Solid State Lighting Ltd. | Double substrate multi-junction light emitting diode array structure |
| CN102270633B (en) * | 2011-07-29 | 2013-11-20 | 贵州大学 | High-power flip-chip array LED chip and manufacturing method thereof |
| WO2013075269A1 (en) * | 2011-11-25 | 2013-05-30 | 海立尔股份有限公司 | High-voltage ac light emitting diode structure |
| CN103137643A (en) * | 2011-11-25 | 2013-06-05 | 海立尔股份有限公司 | High voltage alternating current light-emitting diode structure |
| TW201336116A (en) * | 2012-02-24 | 2013-09-01 | Genesis Photonics Inc | Light emitting diode unit and flip-chip light emitting diode packaging unit |
| CN102637681B (en) * | 2012-04-28 | 2014-07-30 | 厦门市三安光电科技有限公司 | Vertical light-emitting device and manufacturing method thereof |
| CN203205453U (en) * | 2012-11-19 | 2013-09-18 | 罗容 | Semiconductor light-emitting chip and semiconductor lighting lamp |
| CN102938436B (en) * | 2012-11-20 | 2017-02-08 | 无锡华润华晶微电子有限公司 | Isolation filling manufacture method in GaN-based high voltage light-emitting diode (LED) manufacture process |
| WO2014106306A1 (en) * | 2013-01-05 | 2014-07-10 | 海立尔股份有限公司 | High-voltage flip chip led structure and manufacturing method therefor |
| CN105280757A (en) * | 2014-05-27 | 2016-01-27 | 易美芯光（北京）科技有限公司 | Preparation method of high-voltage LED chip with vertical structure |
| CN104377219B (en) * | 2014-11-20 | 2017-03-29 | 厦门乾照光电股份有限公司 | A kind of high-voltage LED of high-luminous-efficiency |
| CN109037261A (en) * | 2017-06-09 | 2018-12-18 | 美商晶典有限公司 | The manufacturing method of micro- light-emitting diode display module |
| TWI686563B (en) * | 2018-04-11 | 2020-03-01 | 台灣愛司帝科技股份有限公司 | Micro led display and method of manufacturing the same |
| CN112992957A (en) * | 2019-12-17 | 2021-06-18 | 深圳第三代半导体研究院 | Light-emitting diode |
| CN115101648A (en) * | 2022-06-20 | 2022-09-23 | 东莞市中麒光电技术有限公司 | Flip-chip package and manufacturing method thereof |
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