CN100541852C - High-frequency generator - Google Patents

High-frequency generator Download PDF

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Publication number
CN100541852C
CN100541852C CNB2006101436456A CN200610143645A CN100541852C CN 100541852 C CN100541852 C CN 100541852C CN B2006101436456 A CNB2006101436456 A CN B2006101436456A CN 200610143645 A CN200610143645 A CN 200610143645A CN 100541852 C CN100541852 C CN 100541852C
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layer
oscillator
frequency
cpp
ccp
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CN1956235A (en
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福泽英明
汤浅裕美
岩崎仁志
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H03B15/006—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects using spin transfer effects or giant magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/003—Transmission of data between radar, sonar or lidar systems and remote stations
    • G01S7/006—Transmission of data between radar, sonar or lidar systems and remote stations using shared front-end circuitry, e.g. antennas
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/35—Details of non-pulse systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H01F10/3259—Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
    • G01S13/02—Systems using reflection of radio waves, e.g. primary radar systems; Analogous systems
    • G01S13/06—Systems determining position data of a target
    • G01S13/08—Systems for measuring distance only
    • G01S13/32—Systems for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
    • G01S13/34—Systems for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal
    • G01S13/345—Systems for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated using transmission of continuous, frequency-modulated waves while heterodyning the received signal, or a signal derived therefrom, with a locally-generated signal related to the contemporaneously transmitted signal using triangular modulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S13/00—Systems using the reflection or reradiation of radio waves, e.g. radar systems; Analogous systems using reflection or reradiation of waves whose nature or wavelength is irrelevant or unspecified
    • G01S13/88—Radar or analogous systems specially adapted for specific applications
    • G01S13/93—Radar or analogous systems specially adapted for specific applications for anti-collision purposes
    • G01S13/931—Radar or analogous systems specially adapted for specific applications for anti-collision purposes of land vehicles
    • G01S2013/9316—Radar or analogous systems specially adapted for specific applications for anti-collision purposes of land vehicles combined with communication equipment with other vehicles or with base stations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Hall/Mr Elements (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

High-frequency generator comprises high-frequency oscillator, and this high-frequency oscillator has the magnetic quilt fixed bed that its direction of magnetization is fixed on a direction substantially; The oscillating layer that when electric current is provided, produces HFO that forms by magnetic material; Be arranged between magnetic quilt fixed bed and the oscillating layer, have insulating barrier and pass through the intermediate layer of the current path of insulating barrier at thickness direction; Provide the electrode of electric current with a pair of plane perpendicular to the laminate film that comprises magnetic quilt fixed bed, intermediate layer and oscillating layer.

Description

High-frequency generator
Quoting alternately of related application
The application is based on the Japanese patent application of the No.2005-314689 of application on October 28th, 2005, and opinion is to its benefit of priority.The full content of this priority application is incorporated by reference herein.
Technical field
Invention relates to the radio communication equipment that is used for millimere-wave band or microwave band, the high-frequency generator of radar equipment or relevant device.
Background technology
Millimere-wave band or microwave band be used to communicate by letter or the situation in radar application field under do not allow to be subject to weather or effect of dust.This is because the wavelength of millimere-wave band or microwave band is very short, receives/sends out antenna and can make very compactly.In addition, can also utilize Doppler effect to survey relative velocity accurately to an object.Just because of this, in recent years, millimetre-wave radar begins to be installed on the automobile in order to avoid because the vehicle collision that driver inattention or misoperation cause.
Conventional millimetre-wave generator comprises the semiconductor device such as Gunn diode.In such millimetre-wave generator that comprises semiconductor device, the temperature of semiconductor device can raise along with excitation, and oscillating characteristic will change.For this reason, just be necessary that the temperature that produces when designing a kind of structure suppresses to encourage raises.Yet the inevitable structure of such millimetre-wave generator is complicated (for example referring to JP-A-2005-19570) very, therefore also just becomes a problem.On the other hand, built-in high frequency filter in the communication equipment that transmits information by radio or wire communication with function of only extracting required frequency range as its critical piece.In order to effectively utilize frequency range, require high frequency filter to have excellent attenuation characteristic and littler insertion loss with stored energy operation communication equipment.In order to realize these requirements, just need a kind of resonant element of high Q value.As the high frequency filter with high Q value, known have a kind of filter (for example referring to JP-A-2004-349966) that uses superconducting component.Yet for the superconducting component operate as normal, this element must cool off with liquid nitrogen or liquid helium.Therefore, be difficult to realize the high frequency filter of cramped construction, same, also be difficult to superconducting component is applied on the consumer products from the viewpoint of cost.
Opposite with these conventional oscillators, a kind of oscillator that adopts diverse physical principle is proposed.For example, referring to S.I.Kiselev et al., Nature, 425,308 (2003).This oscillator has a kind of stacked film, comprising one deck magnetosphere, and the nonmagnetic metal level of one deck and another layer magnetosphere, and the pair of electrodes that current vertical is crossed in the planar flows of laminate film.When being provided, electric current will produce oscillatory occurences.Hereinafter, this oscillator is called as current-perpendicular-to-the-plane (CPP) oscillator.Relevant this CPP oscillator, at present not only as a kind of oscillator, and in the application of aspects such as High frequency filter element (referring to the 5th, 695, No. 864 United States Patent (USP)s) all just under study for action
In this CPP oscillator, according to its physical principle, component size requires to be 100nm * 100nm or littler.This be supposed to have with the oscillator of metal superfine without semiconductor comprise high heat dissipation, the advantage of the little temperature characterisitic of low heat release and oscillating characteristic.In addition, if use such circuit, just needn't as the routine techniques that obtains oscillatory occurences, go the structure of a complexity of framework.
The CPP oscillator has the character of a uniqueness in operation principle, exactly only by just obtaining oscillatory occurences to the logical direct current of device.Therefore have the advantage that is supposed to, its circuit can be simplified when making high-frequency generator.
Yet, in common CPP oscillator, be difficult to obtain operation as practical devices, and at present aspect the device of practical application also without any progress.This be because the output signal of oscillator signal atomic a little less than, when increasing electric current in order to obtain high oscillator signal output, because spin transfer torque phenomenon, the magnetic reversal effect can appear in magnetosphere.For example, referring to J.C.Slonczewski, J.Magn.Magn.Mater., 159, L1 (1996).In case magnetic reversal produces, oscillating condition just changes, and also just can not keep stable oscillatory operation, so the result just can't use as a device.In addition, malleable frequency of oscillation not in common CPP oscillator, its operational frequency bandwidth is limited, and this also is another problem.
Summary of the invention
High-frequency generator according to an aspect of the present invention comprises: a plurality of high-frequency oscillators, this element comprise that the direction of magnetization is fixed on the magnetic quilt fixed bed of a direction (megnetization pinned layer) substantially; By the oscillating layer that magnetic material constitutes, when electric current was provided, this oscillating layer produced HFO; Be arranged at the intermediate layer between magnetic quilt fixed bed and the oscillating layer, this intermediate layer comprises an insulating barrier and passes through the current path of insulating barrier at thickness direction; And pair of electrodes, perpendicular to comprising the magnetic quilt fixed bed, the plane of the laminate film of intermediate layer and oscillating layer provides electric current to electrode for this; Wherein said a plurality of high-frequency oscillator has the area ratio and the different frequencies of oscillation of the different described current paths in described intermediate layer.
Description of drawings
Fig. 1 is the stereogram according to the high-frequency generator of an embodiment;
Fig. 2 is the schematic diagram of the cross section in the intermediate layer in the displayed map 1, and the cross section is parallel to this plane;
Fig. 3 is the schematic diagram that the zone of spin wave excitation takes place in the oscillating layer that is presented at according to the CCP-CPP oscillator of an embodiment effectively;
Fig. 4 is the schematic diagram of demonstration according to an example of the high-frequency integrated circuit of an embodiment;
Fig. 5 is the cross sectional representation according to the CCP-CPP oscillator with magnetic field applying mechanism of an embodiment;
Fig. 6 is the stereogram according to the CCP-CPP oscillator with magnetic field applying mechanism of another embodiment;
Fig. 7 is the stereogram according to the CCP-CPP oscillator with magnetic field applying mechanism that also has an embodiment;
Fig. 8 is the stereogram according to the CCP-CPP oscillator of embodiment 2;
Fig. 9 is the stereogram according to the CCP-CPP oscillator of embodiment 3;
Figure 10 A and Figure 10 B are the plane graphs according to the high-frequency integrated circuit of embodiment 4, and the schematic diagram that shows its stepped construction;
Figure 11 is the schematic diagram that shows according to the high-frequency integrated circuit that is connected in parallel of embodiment 4;
Figure 12 A, 12B and 12C are that each all shows the schematic diagram according to the intermediate layer with different current path area ratios of the CCP-CPP oscillator of embodiment 4;
Figure 13 is the magnetic quilt fixed bed that shows according to the CCP-CPP oscillator of embodiment 4, the schematic diagram of the preferred cross-sectional structure of intermediate layer and oscillating layer;
Figure 14 is the schematic diagram that shows according to the high-frequency integrated circuit that is connected in series of embodiment 5;
Figure 15 is the schematic diagram of demonstration according to the system configuration of the millimere-wave band trailer-mounted radar of embodiment 6;
Figure 16 is a kind of circuit diagram of trailer-mounted radar of FM-CM radar scheme;
Figure 17 is the schematic diagram that shows the radar signal waveform among Figure 16;
Figure 18 is the schematic diagram of example configuration that shows a kind of millimeter wave trailer-mounted radar of FM-CM radar scheme;
Figure 19 is the schematic diagram of example configuration that shows a kind of millimeter wave trailer-mounted radar of pulse Doppler effect;
Figure 20 shows the schematic diagram comprise according to the automobile of the trailer-mounted radar equipment of embodiment 6;
Figure 21 shows the schematic diagram of a kind of car according to embodiment 7 to the car communication equipment; And
Figure 22 is that a kind of information terminal according to embodiment 8 is to terminal communication equipment;
Embodiment
Shown in Figure 1 is to comprise the stereogram of the high-frequency generator of high-frequency oscillator according to an embodiment of the invention.The high-frequency oscillator of forming high-frequency generator has such structure, stacked bottom electrode 11 on the substrate (not shown), bed course 12, fixed bed (pinning layer) 13, layer (pinned layer) 14a is fixed under comprising, Ru layer 14b and on the be fixed magnetic quilt fixed bed (be fixed layer) 14 of layer 14c, metal level 15, intermediate layer (wall) 16, metal level 17, oscillating layer 18, cover layer 19 and top electrode 20.Intermediate layer 16 comprises insulating barrier 21 and passes through the metal current path 22 of the nanometer scale of insulating barrier at thickness direction.When making current vertical in the magnetic quilt fixed bed 14 between bottom electrode 11 and top electrode 20, when flow in the plane of the laminate film of intermediate layer 15 and oscillating layer 18, electric current is fixed in the current path 22 in intermediate layer 16 and flows.Therefore, because spin transfer torque phenomenon the spin wave excitation (magnetization precession) of oscillating layer 18 just occurred, and has obtained the higher-order of oscillation of certain frequency.Because this effect, we are with this oscillator called after electric current fixed access CPP (CCP-CPP) oscillator.
Shown in Figure 2 is the cross sectional representation in the intermediate layer of Fig. 1, cross section and this plane parallel.As causing the effectively component size of vibration, on one side length L from 20 to 200nm, typically be 40 to 100nm.The dimension D of current path is 0.5 to 10nm, typically is 1 to 6nm.Though it is pointed out that the device shape shown in Fig. 2 is rectangle, circle and ellipse also can adopt, as long as they have and above-mentioned same device size.
According to the CCP-CPP oscillator of embodiment of the present invention, can obtain following two kinds of effects.
In the CCP-CPP oscillator, the current path in the intermediate layer has been fixed electric current, and local current densities has shown extremely high value.High current density produces vibration effectively, and the benefit that bring in the zone of current density high concentration is that the magnetic reversal effect may not take place.To be described in more detail the effect of CCP-CPP oscillator according to an embodiment of the invention hereinafter with in the comparison of common CPP oscillator.
At first, why can more effectively produce the reason of vibration in the CCP-CPP oscillator according to an embodiment of the invention with specifically describing.
The device size of the design of common CP P oscillator is 100nm * 100nm or littler.For example, if make the electric current of 1mA flow to this oscillator equably on the whole plane of the oscillator of 100nm * 100nm, current density is exactly 1mA/ (100nm * 100nm)=1 * 10 7A/cm 2Under the current density of such level, the spin wave excitation owing to the spin transfer torque takes place, and the higher-order of oscillation that millimere-wave band or microwave band take place.Because when current density is bigger, spin wave excitation can take place more effectively, so it helps vibrating.Yet,, also produce because other phenomenons that the spin transfer torque produces are the magnetic reversal effect when when whole plane provides the electric current of high current density.That is to say that the magnetization of magnetic quilt fixed bed or oscillating layer all takes place oppositely.In case magnetic reversal occurs, the relative magnetization collimation of magnetic quilt fixed bed and oscillating layer just changes, and therefore, spin wave excitation also is affected.As a result, the change of frequency of oscillation and Q value taking place, is worthless for oscillator.
Now, as an example of CCP-CPP oscillator according to the present invention, the area of supposing nanoscale current path on a kind of plane is than the CCP-CPP oscillator that is 10%.If make the electric current of 1mA flow into the CCP-CPP oscillator of 100nm * 100nm, current density is exactly 1 * 10 7/ cm 2/ (10%)=1 * 10 8A/cm 2Be preferably in the CCP-CPP oscillator according to present embodiment and use 10 8A/cm 2Or local bigger current density.By this way, in CCP-CPP oscillator, depend on that the area ratio of current path obtains high current density, and effectively local spin wave excitation takes place according to present embodiment.Correspondingly obtain high vibration output, the Q value also can raise.Further, sensitivity also can be better when being used as high frequency filter.In order to bring into play the effect of present embodiment better, the nanoscale current path area ratio on the plane, intermediate layer sets 1% to 95% for, and representative value is 2% to 90%, more typically is 3% to 50%.
Next will be explained in according to other phenomenons that why may not take place in the CCP-CPP oscillator of present embodiment to be produced by the spin transfer torque is the reason of magnetic reversal.When the spin transfer torque is applied in the application scenario of magnetic RAM (MRAM), under the low current density situation, how produces magnetic reversal and just become extremely important in practice.In addition, in MRAM uses,, take not take place further to magnetize the measure of power usually owing to can obtain energy homeostasis afterwards because of electric current provides the generation magnetic reversal.On the contrary, owing to obtain energy homeostasis when causing magnetic reversal in the magnetosphere of this oscillator in the oscillator and stop magnetization power, above-mentioned measure does not just have meaning.Therefore, as noted earlier, need under high as far as possible current density, produce stable precession.
Fig. 3 has schematically shown the zone that spin wave excitation effectively takes place in according to the oscillating layer of the CCP-CPP oscillator of present embodiment.As shown in Figure 3, electric current is fixed by the nanoscale current path in intermediate layer, and in adjacent oscillating layer, electric current flows in the wideer zone 23 of ratio nano level current path 22.The generation of spin wave excitation is more effective in zone 23.The zone 23 of the more effective generation of spin wave excitation not with oscillating layer in the zone widened of electric current fully corresponding.Because spin is exchange coupling in the oscillating layer, just high than current density zone, the zone 23 that spin wave excitation effectively takes place is wideer.Yet different with common CP P oscillator, the zone 23 that spin wave excitation effectively takes place not is the whole plane of magnetized layer, and therefore, the magnetic reversal of whole magnetized layer may not take place.This is because for the magnetic reversal that takes place to cause owing to the spin transfer torque in magnetized layer, whole surface all must be by spin wave excitation.As shown in Figure 3 entire device not by the state of spin wave excitation equably in, the magnetic reversal phenomenon may not take place.That is to say that the device operation of steady oscillation condition is feasible.
As mentioned above, according to CCP-CPP oscillator of the present invention, can effectively produce vibration by local high current density, simultaneously because the zone of high current density is localized so magnetic reversal may not be taken place, the stability that can be exported simultaneously and move so just.
(2) in CCP-CPP oscillator, can recently change the frequency of oscillator by the area that changes nanoscale current path on the plane according to present embodiment.By utilizing this fact, can obtain various frequencies of oscillation with low power with the CCP-CPP oscillator of different nanoscale current path area ratios.Especially, can produce high-frequency integrated circuit by a plurality of CCP-CPP oscillators that on same substrate, form different nanoscale current path area ratios with little chip size.So just can obtain extremely wide band frequency of oscillation, further, this CCP-CPP oscillator can also be as the high frequency filter that can select extremely wide band frequency.
In the high-frequency element technology of routine, can not realize this high-frequency integrated circuit.It is complicated and expensive to handle millimeter device architecture that involves microwave, therefore is not widely used.Yet, just can realize handling the extensive use that millimeter involves the consumer products of microwave according to CCP-CPP oscillator of the present invention.
In the example of as shown in Figure 4 high-frequency integrated circuit according to an embodiment of the invention, each all comprises CCP-CPP oscillator 31, the system of three serial circuit of amplifier 32 and ammeter 33 is parallel-connected on the power supply 34, just constitutes a high-frequency integrated circuit by such process.Each CCP-CPP oscillator 31 has different the area ratio and the different frequencies of oscillation of the nanoscale current path in the intermediate layer.In high-frequency integrated circuit, the selection that is provided to CCP-CPP oscillator 31 wherein by Control current can obtain extremely wide frequency band.
In another one embodiment of the present invention, a plurality of CCP-CPP oscillators can be connected by electricity.The output that when the CCP-CPP oscillator is connected, can increase oscillator signal.
Even in common CP P oscillator, with a plurality of CPP oscillators as described above serial or parallel connection also be effectively, and can obtain the output effect through improve same with the situation of CCP-CPP oscillator.
Further, can change frequency of oscillation by apply an external magnetic field to the CCP-CPP oscillator.Though very little to the change of frequency of oscillation by this method, also can adopt this method in case of necessity.Hereinafter will be by describing the mechanism that applies the external magnetic field to the CCP-CPP oscillator with reference to figure 5 to Fig. 7.
In the example of Fig. 5, couple of conductor 41 is set on the both sides of CCP-CPP oscillator, makes it vertical with the sense of current that provides to the CCP-CPP oscillator.Make current direction lead 41 under these circumstances, apply external magnetic field (among Fig. 5 up) with same direction, direction is vertical with the plane of CCP-CPP oscillator.
In the example of Fig. 6, couple of conductor 42 is set on the both sides of CCP-CPP oscillator, makes it parallel with the sense of current that provides to the CCP-CPP oscillator.Make current direction lead 41 under these circumstances, apply external magnetic field (the paper delivery direction among Fig. 6), the plane parallel of direction and CCP-CPP oscillator with same direction.
In the example of Fig. 7, use magnetic field applying mechanism that forms by lead and the magnetic field applying mechanism that forms by hard bias (hard bias) film together.That is to say that couple of conductor 43 is set at the both sides of CCP-CPP oscillator, make it parallel, and hard bias film 44 is set at the other both sides of CCP-CPP oscillator with the sense of current that provides to the CCP-CPP oscillator.Make current direction lead 43 under these circumstances, and the hard bias film is configured to apply external magnetic field (in Fig. 7 to the right), the plane parallel of direction and CCP-CPP oscillator in same direction.
Can make it have function at Fig. 5 to being provided with of the such magnetic field applying mechanism shown in Fig. 7 as the device of high-frequency generator work.This effectively same in common CP P oscillator with the structure that changes frequency of oscillation as device adding magnetic field applying mechanism, also can obtain the effect same with the situation of CCP-CPP oscillator.
In CCP-CPP oscillator according to an embodiment of the invention, the magnitude of current that provides by change also can change frequency of oscillation more or less.Yet owing in this way be difficult to change significantly the frequency band of frequency of oscillation, this method is applied to carrying out the tuning occasion of meticulous frequency band.
Example
Part below will be by being described in greater detail with reference to the attached drawings example of the present invention.In following example, representing the meaning of the symbol " % " of alloying component is the % of atomicity.
[embodiment 1]
The special case that in example 1, narration is had the high-frequency generator (CCP-CPP element) of structure shown in Figure 1.High-frequency generator in this example is made by following film sequentially is layered on the substrate (not shown).
Bottom electrode 11
Bed course 12:Ta[5nm]/Ru[2nm]
Fixed bed 13:Pt 50Mn 50[15nm]
Magnetic quilt fixed bed [layer is fixed] 14:Co 90Fe 10[3.6nm]/Ru[0.9nm]/Fe 50Co 50[3nm]
Metal level 15:Cu[0.5nm]
Wall 16:Al 2O 3Insulating barrier 21 and Cu current path 22 (pass through depositing Al 90Cu 10The film of [1nm] carries out injecting before the oxidation the pre-ion processing [PIT] of ion beam of rare gas and the method formation of Assisted by Ion Beam oxidation [IAO])
Metal level 17:Cu[0.25nm]
Magnetic oscillating layer 18:Co 90Fe 10[1nm]/Ni 83Fe 17[3.5nm]
Cover layer 19:Cu[1nm]/Ru[10nm]
Top electrode 20
Should be noted that wall 16, last lower metal layer 15 and 17 is referred to as wall hereinafter.CCP-CPP oscillator among Fig. 1 is that the layer 14 that is fixed is arranged on the bottom pattern of bottom, but compulsorily also can be the top pattern that layer 14 is arranged on the top that is fixed.The method of the CCP-CPP device in the shop drawings 1 will be described below in more detail.
On the substrate (not shown), form the bottom electrode 11 that allows current vertical to flow in thin film planar.On bottom electrode 11, as bed course 12 deposition one deck Ta[5nm]/Ru[2nm].Ta is the resilient coating that is used for cushioning the roughness of bottom electrode.Ru is used for controlling the crystal orientation that will deposit spin valve thin film thereon and the inculating crystal layer (seed layer) of crystallite dimension.
Ta, Ti, W, Zr, Hf, Cr or their alloy can adopt as resilient coating.The thickness of resilient coating is preferably 2 to 10nm, and 3 to 5nm is better.If the too little cushioning effect that just loses of the thickness of resilient coating.If buffer layer thickness is excessive, there is not the series resistance of contribution to increase to the MR ratio, this is worthless.Yet,, just always do not need to be provided with by metal resilient coatings such as Ta if the inculating crystal layer that is deposited on the resilient coating also has cushioning effect.
Can adopt any material in the crystal orientation that can control deposition level thereon, the metal level that preferably has hcp structure or fcc structure as inculating crystal layer.By with Ru as inculating crystal layer, can make the crystal orientation of the spin valve thin film on the inculating crystal layer become fcc (111) crystal orientation, can also be kept for well PtMn the crystal orientation orderly fct structure and be used for bcc (110) crystal orientation in the crystal orientation of bcc metal.Further, the setting of inculating crystal layer can be controlled at the crystallite dimension of spin valve thin film 10 between the 40nm, like this, even also can realize effectively vibration and can not cause uneven characteristic in the size decreases of CCP-CPP oscillator.About the crystal orientation, the overall with that can be implemented in the swing curve half maximum place at fct (111) peak of fcc (111) peak of spin valve thin film or PtMn or bcc (110) peak is issued to the preferred relatively crystal orientation of 3.5 to 6 degree in the measurement of X-ray diffraction.The angle of divergence in crystal orientation also can be determined from diffraction spot with sectional tem.
As inculating crystal layer, for example, also can be with making its non-magnetic Ni by in NiFe, adding the third element xFe 100-x(x from 10 to 50%, preferred 15 to 25%), (Ni xFe 100-x) 100-yx y(x is from Cr, V, Nb, Hf, Zr selects among the Mo) etc. replaces Ru.NiFe base inculating crystal layer improves more than the crystal orientation of the basic inculating crystal layer of Ru, the overall with by the swing curve half maximum place measured with top the same mode becomes 3 to 5 and spends.In order to obtain described above 10 to the suitable crystallite dimension of 40nm, preferably the constituent y with the third element x is set in about 0 to 30%.In order to make crystallite dimension, preferably use the additional elements of bigger quantity greater than 40nm.For example, under the situation of using NiFeCr, preferably make the quantity of Cr be about 35% to 45%, and adopt the constituent that shows the borderline phase between fcc and the bcc.
Inculating crystal layer thickness preferred 1.5 to 6nm, 2 to 4nm is better.If inculating crystal layer thickness is too small, the effect of crystal orientation control etc. disappears.If inculating crystal layer thickness is excessive, can increases series resistance, and may cause the interface roughness of spin valve thin film.
Fixed bed 13 is deposited on the bed course 12.Fixed bed 13 has to providing unidirectional anisotropic function as depositing thereon to fix its magnetized ferromagnetic layer that is fixed layer 14.As the material of fixed bed 13, can adopt such as PtMn PdPtMn, the antiferromagnet of IrMn and RuRhMn.For the unidirectional anisotropy of sufficient intensity is provided, the thickness of fixed bed 13 should suitably be set.Under the situation that adopts PtMn or PdPtMn, thickness is preferably about 8 to 20nm, and 10 to 15nm is better.Under the situation that adopts IrMn or RuRhMn, even can be by providing unidirectional anisotropy than PtMn or the thinner thickness of analog material, thereby thickness is preferably 5 to 18nm, and 7 to 15nm is better.Can adopt hard magnetic layer to replace inverse ferric magnetosphere.For example, CoPt (scope of Co from 50% to 85%), (Co xPt 100-x) 100-yCr y(x from 50% to 85%, and y from 0 to 40%), FePt (scope of Pt from 40% to 60%) etc. can be used as hard magnetic layer.The layer 14 that is fixed forms on fixed bed 13.The layer 14 that is fixed of the present embodiment layer 14a (Co that be fixed under being 90Fe 10), Ru layer 14b and on layer 14c (Fe that be fixed 50Co 50[3nm]) the synthetic layer that is fixed.Fixed bed (PtMn) 13 and just in time the following layer 14a that be fixed above level 13 be exchange coupling so that have unidirectional anisotropy.Ru layer 14b upper and lower following be fixed layer 14a and on the be fixed magnetic coupling of layer 14c so strong so that the mutual antiparallel of their direction of magnetization.
Preferably descend fixed bed 14a to be designed to make magnetic thickness, just saturation magnetization Bs and thickness t (product of Bs * t) equal substantially the to be fixed magnetic thickness of layer 14c that multiplies each other.In the present embodiment, layer 14c that be fixed on is Fe 50Co 50[3nm], the saturation magnetization of FeCo is approximately 2.2T, thus magnetic thickness is exactly 2.2T * 3nm=6.6Tnm.Co owing to layer 14a that be fixed down 90Fe 10Saturation magnetization approximately be 1.8T, the thickness t that draws with the following layer 14a that be fixed of above-mentioned same magnetic thickness is 6.6Tnm/1.8T=3.66nm.In the present embodiment, employing is that thickness is the Co of 3.6nm 90Fe 10From the viewpoint of the antiferromagnetism coupled field intensity of the unidirectional anisotropy field intensity by fixed bed (PtMn) and following the be fixed layer and the layer that is fixed by Ru, the magnetospheric thickness of the layer that is used for being fixed down is preferably about 2 and arrives 10nm.If thickness is excessive, be difficult to obtain for the enough unidirectional anisotropy fields of device operation.
As the material of layer 14a that be fixed down, Co xFe 100-xAlloy (x from 0 to 100%), Ni xFe 100-xAlloy (x from 0 to 100%) perhaps can adopt by the material that obtains to its adding nonmagnetic elements.
Ru layer 14b has and up and down producing the antiferromagnetism coupling to form the function of the synthetic layer structure that be fixed in the magnetosphere.The thickness of Ru layer 14b is preferably between 0.8 to 1nm.Also can adopt the other materials beyond the Ru, if this material up and down magnetosphere produce sufficient antiferromagnetism coupling.
On layer 14c (Fe that be fixed 50Co 50[2nm]) be the magnetosphere that injects spin information to other magnetospheres that below will mention, be the functional layer of performance important role in the present invention.Especially, the magnetic material that is positioned on the interface with wall is extremely important on this point is made contributions in the interface scattering that relies on to spin.In the present embodiment, that employing is the Fe with bcc structure 50Co 50
Example with FeCo base alloy of bcc structure comprises Fe xCo 100-x(x from 30% to 100%) perhaps adds the Fe of other elements xCo 100-x
The Fe of more stable bcc structure is provided particularly, 80Co 20Can be used as preferable material.Preferably function as on the be fixed thickness of magnetic material of layer be 2nm or bigger.For on the layer that is fixed, the cobalt alloy that can adopt the CoFe alloy of fcc structure or have a hcp structure replaces magnetic material with bcc structure.Such as Co, all metallic elements of Fe and Ni and comprise that the alloy material of any these elements can be used.
As on the layer that is fixed, can adopt the material of have alternately laminated magnetosphere (FeCo layer) and nonmagnetic layer (ultra-thin Cu layer), best, the thickness of the Cu layer between the magnetosphere is about 0.1 to 0.5nm.If the Cu layer thickness is too big, magnetosphere dies down by the magnetic couplings of non magnetic Cu layer up and down, and the characteristic of the layer that is fixed will be not enough, and this is worthless.As the material of the nonmagnetic layer between the magnetosphere, Hf, Zr, elements such as Ti can be used for replaced C u.On the other hand, the thickness such as each layer of magnetosphere of FeCo should be preferably between 0.5 to 2nm.
Can adopt FeCo and Cu alloy on be fixed layer replace having alternately laminated FeCo layer and Cu layer on the layer that is fixed.The example of such FeCoCu alloy comprises (Fe xCo 100-x) 100-yCu y(x from 30% to 100%, and y from 3% to 15%), but other compositing range also can adopt.As the element that joins among the FeCo, can adopt beyond the Cu such as Hf, the element of Zr or Ti.By Co, Fe, the single thin film that Ni and alloy thereof constitute can be used to the layer that is fixed.For example, can be with Co 90Fe 10Individual layer as have the simplest structure on the layer that is fixed.Can add other elements to these materials.
The thickness of layer of being fixed is configured to make the magnetic field that is fixed that enough big value can be arranged, and than the enough weak points of spin diffusion length.Though spin diffusion length is along with magnetic material changes, typical spin diffusion length is about 100nm, thereby the thickness of the layer that is fixed can not surpass 100nm.
Next step is deposited upon on the layer 14 that is fixed as the Cu of the first metal layer in the source of the current path 22 that forms wall 16, deposits the AlCu as second metal level of the insulating barrier 21 that will change into wall 16 then.Then, in as the AlCu layer of second metal level, inject the ion beam of rare gas, carry out pre-ion processing (PIT) before the oxidation by this step.In this process, the Ar ion is at accelerating voltage 30 to 130V, and line 20 to 200mA injects under the condition in 30 to 180 seconds processing times.Though the metal level (Cu layer) of first deposition exists with the form of bidimensional film, the Cu in the first metal layer is separated out and is penetrated in the AlCu layer by the PIT process, and the Cu that enters in the AlCu layer just becomes current path.Further, carry out Assisted by Ion Beam oxidation (IAO) as the AlCu layer of second metal level.In this process, when oxygen was provided, the Ar ion was at accelerating voltage 40 to 200V, and line 30 to 300mA injects under the condition in 15 to 300 seconds processing times.Al is oxidized probably, and Cu may not necessarily.Thus, generation has by Al 2O 3The wall 16 of insulating barrier 21 that constitutes and the current path 22 that constitutes by Cu.
The thickness of Cu layer depends on that the thickness of AlCu layer adjusts, and that is to say that when the thickness of AlCu layer became big, the quantity that enters into the Cu of AlCu layer in the PIT process must increase, and also just must increase the thickness of Cu layer.For example, when the thickness of AlCu layer was 0.6 to 0.8nm, the thickness of Cu layer was set to about 0.1 to 0.5nm.When the thickness of AlCu layer was 0.8 to 1nm, the thickness of Cu layer was set to about 0.3 to 1nm.If the Cu layer thickness is too small, in the PIT process, just can not provide the Cu of sufficient amount to enter into the AlCu layer, thereby, just can not make the current path of Cu pass and arrive the top of AlCu layer.On the other hand, if the Cu layer thickness is excessive, though in the PIT process, can provide the Cu of sufficient amount to enter into the AlCu layer, be fixed the layer 14 and wall 16 between finally can stay a bed thickness Cu layer.In order to realize most of effect of the present invention, must be fixed in the magnetospheric while of arrival at the electric current that wall 16 is fixed always.Yet, if still staying, thick Cu layer is fixed between layer 14 and the wall 16, and the electric current of being fixed in wall will broaden before arriving magnetosphere, and this is worthless.
Can use Au, metal replaced C u such as Ag are as the material of the first metal layer that forms current path.Yet to compare Cu more desirable with Au and Ag, and this is because Cu has higher to heat treated stability.In order to replace these nonmagnetic substances can adopt magnetic material to make the material of the first metal layer.The example of magnetic material comprises Co, Fe, Ni and their alloy.When the magnetic material of the layer that is used to be fixed is identical with the magnetic material that is used for current path, just needn't on the layer that is fixed, form current path source (the first metal layer).That is to say, after second layer metal deposition that will be converted to insulating barrier is being fixed layer, carry out the PIT process, make the material of the layer that is fixed enter second metal level, just can form the current path that constitutes by magnetic material.When the nanoscale current path by such as Fe, Co, the magnetic material of Ni and the magnetic alloy material that comprises these magnetic element constitute and will be such as the nonmagnetic layer of Cu during as material spacer layer, and oscillating characteristic etc. will change, and this is desirable to some application scenario.In this case, the first metal layer can be by Fe, Co, Ni or comprise that the magnetic alloy material of these magnetic element constitutes, perhaps do not form a new layer as the first metal layer, in fact, the layer 14 that is fixed just can be as the material that forms the nanoscale current path.
Work as Al 90Cu 10When being used as second metal level, in the PIT process, not only the Cu of the first metal layer is separated out, and the Cu among the AlCu also separates with aluminium and forms current path.And, if the Assisted by Ion Beam oxidation after the PIT process, carry out because the booster action of ion beam, easier generation during being separated in oxidation and carrying out of Al and Cu.As second metal level, do not comprise that the Al of Cu can replace Al 90Cu 10Material as current path.In this case, the Cu as the current path material only provides from following the first metal layer.When AlCu is used as second metal level, in the PIT process, also from second metal level, provide as the Cu of current path material.Because this reason is even also can easily form current path under the situation that forms thick dielectric layer.When Al was used as second metal level, Cu was difficult at the Al by oxidation formation 2O 3The middle mixing, therefore, can easily form high-resistance Al 2O 3
Second metal layer thickness is 0.6 to 2nm under the situation of AlCu, and next in the situation of Al is 0.5 to 1.7nm.The thickness of the insulating barrier that is formed by the oxidation of these second metal levels is about 0.8 to 3.5nm.Can make thickness after the oxidation at an easy rate at 1.3 insulating barriers in the 2.5nm scope, also very favourable aspect the electric current fixed effect.Further, the diameter of the current path by insulating barrier is about 1 to 10nm.
Preferably having expression formula as the AlCu of second metal level is Al xCu 100-xThe composition structure of (x from 100% to 70%), from Ti, Hf, Zr, Nb, Mg, the additional elements of selecting among Mo and the Si can be added among the AlCu.In this case, the constituent of additional elements is preferably in about 2 to 30%.When adding additional elements, it is easier that the formation of CCP structure becomes in some cases.In addition, when additional elements at Al 2O 3When the borderline region between insulating barrier and the Cu current path more enriched than other area distribution, tack and electro migration resistance between insulating barrier and the current path were improved.In the CCP-CPP element, the current density in the wall reaches 10 7To 10 10A/cm 2Because this reason, the electro migration resistance height, and the stability of Cu current path is guaranteed just very important when electric current is provided.In the present embodiment, preferably use 10 8A/cm 2Or higher current density.Yet,, can not obtain enough good electro migration resistance even if in second metal level, do not add additional elements if form appropriate C CP structure yet.
The material of second metal level is not limited to be used to form Al 2O 3The Al alloy, mainly by Hf, Zr, Ti, Ta, Mo, W, Nb, Si, the alloy of compositions such as Mg can adopt.Further, the insulating barrier that is converted from second metal level is not limited to oxide, and nitride or nitrogen oxide can adopt.Any material is being used as under the situation of second metal level, and the thickness during deposition is preferably 0.5 to 2nm, is converted into oxide, and the thickness when nitride or nitrogen oxide is preferably 0.8 to 3.5nm.
Deposition one deck Cu[0.25nm on wall 16] film is as metal level 17.This metal level 17 has that thereon ionized layers contacts with the oxide of wall 16 and the function of the resilient coating that self is oxidized as preventing to deposit.Explanation in passing in some cases, can be avoided the oxidation of ionized layers by the optimization of annealing conditions etc.So the metal level 17 on wall 16 is not to be provided with.Thereby though be necessary as the metal levels 15 that are positioned at below the wall 16 in the source of current path, the metal level 17 on wall 16 is necessity always.Consider the leeway in the production, it is preferable forming metal level 17 on wall 16.The example of the material of metal level 17 comprises Au, Ag and Ru and Cu.But the material of metal level 17 is preferably identical with the material of current path in the wall 16.If material that will be different with current path is as the material of metal level 17, then interface resistance can increase, but when two kinds of materials were identical, interface resistance did not increase.The thickness of metal level 17 preferred 0 to 1nm, 0.1 to 0.5nm is then better.If metal level 17 is too thick, will be at the electric current that wall 16 is fixed in metal level 17 diffusions, deficiency to such an extent as to the electric current fixed effect becomes.Co 90Fe 10[1nm]/Ni 83Fe 17The thin film deposition of [3.5nm] on metal level 17 as second magnetosphere 18.Selecting for use and Co 90Fe 10Under the situation of the CoFe alloy that composition is approaching, thickness preferably is set to 0.5 to 4nm.(for example, with the composition of layer associated description that be fixed under) the situation, thickness preferably is set to 0.5 to 2nm selecting the CoFe alloy of another composition for use.Under the situation of selecting the Fe that does not contain Co for use, thickness can be set in about 0.5 to 4nm, because soft magnetic characteristic is good relatively.The composition of NiFe alloy is preferably Ni xFe 100-x(x is between 78-85%).The thickness of NiFe layer preferably is set to about 2 to 5nm.Under the situation of not selecting the NiFe layer for use, can select ionized layers for use, wherein alternately stacked 1 to 2nm thick CoFe layer or Fe layer and about 0.1 arrives the thick ultra-thin Cu layer of 0.8nm.
Stacked Cu[1nm on ionized layers 18] and Ru[10nm] as cover layer 19.Cover layer has the function of protection spin valve thin film.The thickness of Cu layer is preferably in about 0.5 to 10nm.Can directly be provided with on the ionized layers 18 thickness about 0.5 to 10nm the Ru layer and the Cu layer is not set.Replace the Ru layer, another metal level can be set on the Cu layer.Tectal structure is not done fixing especially, can select other material for use as long as can bring into play the effect that covers yet.On cover layer 19, form the top electrode 20 that allows current vertical to flow in spin valve thin film.
In the CCP-CPP oscillator according to present embodiment, vibration takes place effectively, but magnetization inversion may not take place.In addition, in the CCP-CPP oscillator according to present embodiment, by changing the area ratio of nanoscale current path in the plane, the zone (with reference to figure 3) that spin wave excitation takes place effectively can be changed significantly.Therefore, the frequency of vibration can change in the very big scope from 1GHz to hundreds of GHz.In addition, in CCP-CPP oscillator, can obtain 200 or higher high Q value according to present embodiment.
[embodiment 2]
Fig. 8 has shown the stereogram according to the CCP-CPP oscillator of modification example of the present invention.This CCP-CPP oscillator has such structure, wherein be layered on the substrate (not show) is bottom electrode 11, bed course 12, the first fixed beds 131, the first magnetic quilt fixed beds (the synthetic layer that is fixed) 141, first intermediate layer 161, oscillating layer 18, the second intermediate layers 162, the second magnetic quilt fixed beds (the synthetic layer that is fixed) 142, second fixed bed 132, cover layer 19 and top electrode 20.
In this CCP-CPP oscillator, comprise the intermediate layer 161,162 of nanoscale current path in the upper and lower settings of the oscillating layer 18 that excites spin wave, and can improve vibration owing to high restriction of current effect and export.
[embodiment 3]
Fig. 9 has shown the stereogram according to the CCP-CPP oscillator of another modification example of the present invention.This CCP-CPP oscillator has such structure, and wherein being layered on the substrate (not show) is bottom electrode 11, bed course 12, first fixed bed 131, the first magnetic quilt fixed bed (the synthetic layer that is fixed), 141, the first intermediate layers, 161, the first oscillating layers 181, second intermediate layer 162, second oscillating layer, 182, the three intermediate layers, 163, the second magnetic quilt fixed beds (the synthetic layer that is fixed) 142, second fixed bed 132, cover layer 19 and top electrode 20.
Because this CCP-CPP oscillator comprise to Fig. 8 in similar two-layer oscillating layer, therefore can improve vibration output.
[embodiment 4]
To be described by the high-frequency integrated circuit of parallel connection high-frequency generator in this example.Figure 10 A and 10B are according to the plane graph of the high-frequency integrated circuit of this example and the schematic diagram of stepped construction thereof.As shown in Figure 10 B, on Si substrate 51, formed the CMOS transistor 52 of amplifier effect, on CMOS transistor 52, form CCP-CPP oscillator 53.Shown in Figure 10 A, a plurality of CCP-CPP oscillators 53 are arranged in the surface of Si substrate 51 regularly.Usually, the transistorized manufacturing process of CMOS comprises the high-temperature step higher than the manufacturing process temperature of CCP-CPP oscillator, thereby adopts the stepped construction shown in Figure 10 B.Just, on Si substrate 51, form CMOS transistor 52, make this surfacing and form the contact thereon, and then form CCP-CPP oscillator 53.
As shown in figure 11, a plurality of CCP- CPP oscillator 53a, 53b, 53c and 54d are parallel to power supply 54 to form high-frequency integrated circuit.As Figure 12 A, shown in 12B and the 12C, these CCP-CPP oscillators have the different separately area ratio of the nanoscale current path 22 in the intermediate layer that comprises insulating barrier 21 and nanoscale current path 22, the result, and these CCP-CPP oscillators have different frequencies of oscillation.The area of the nanoscale current path 22 in the intermediate layer is than pressing a, and the order of b and c is more and more littler.
Figure 13 has shown magnetic quilt fixed bed 14, the preferred cross section structure of intermediate layer 16 and oscillating layer 18.Magnetic quilt fixed bed 14 has the microstructure of the crystal grain G that separated by grain boundary B of wherein growing.Intermediate layer 16 comprises insulating barrier 21 and nanoscale current path 22, and nanoscale current path 22 passes insulating barrier 21 at the center position of crystal grain G basically along thickness direction.In addition, the crystal grain of growth oscillating layer 18 on intermediate layer 16.In such structure, the mobile therein zone of electric current that in the magnetic quilt fixed bed, distributes and be fixed, perhaps the oscillating layer about the nanoscale current path becomes the center of crystal grain.The center of crystal grain has good crystal structure, and is not subjected to the influence at the electronics of grain boundary scattering, therefore, can realize good oscillating characteristic.So just can realize good Q value and improve vibration output.
Exist the nanoscale current path to mean when limiting crystal grain at the core of crystal grain and hereinafter described will become preferred range based on observation with sectional tem etc.Stipulated such coordinate in each crystal grain of Figure 13, the left end that makes the grain boundary of crystal grain is a coordinate 0, and right-hand member is a coordinate 100, and the core of crystal grain is a coordinate 50.In this case, at least a portion that preferably has a nanoscale current path of the crystal structure that passes through oxide is present in the scope of coordinate 20 to 80.Preferable is that the whole nanoscale current paths with the crystal structure that passes through oxide all are present in the scope of coordinate 20 to 80.Perhaps, require the nanoscale current path to be present in away from grain boundary (coordinate 0 or coordinate 100) 3nm or above crystal grain inside.
Here, as the simplest define method of crystal grain, a projection that forms the unevenness that schematically shows as Figure 13 just can be defined as a crystal grain.In other words, the cycle of unevenness can be defined as the size of crystal grain.Suppose of oxide and unevenness in interface magnetic layer between the identification of this unevenness by forming wall.The spike of this unevenness partly is the core of crystal grain, and corresponding with the grain boundary than lower part.In this case, must make film enough thin on the depth direction of observing by sectional tem, so that can clearly observe lattice structure.In addition, not only by single unevenness, and equally also can define crystal grain and grain boundary by the discontinuous of lattice and adjacent crystal grain.In other words, lattice is present in the same crystal grain substantially continuously, and the grain boundary can be confirmed to be the ruined interface of lattice continuity.
As previously described, in the high-frequency integrated circuit according to present embodiment, a plurality of high-frequency generators in parallel have different frequencies of oscillation, and can use in broad frequency range.If the technology by routine realizes such function in the high-frequency that involves microwave such as millimeter, this system must be that size is big and cost is high, therefore hinders its popularization to consumer applications.Yet, by using high-frequency integrated circuit, just can build this system, and in consumer applications, promote and handle the high-frequency element that millimeter involves microwave with cheap cost according to present embodiment.
It should be noted in parallel to have a plurality of CCP-CPP oscillators of essentially identical frequency of oscillation to form a high-frequency integrated circuit.In order to improve the purpose of vibration output, such high-frequency integrated circuit can bring various advantages.In addition, the high-frequency integrated circuit of CPP oscillator manufacturing parallel connection as shown in figure 11 that also can have the routine in the intermediate layer (being typically the thick Cu of several nm) of making by use by nonmagnetic metal, rather than make by the CCP-CPP oscillator with the intermediate layer that comprises insulating barrier and current path.In such high-frequency integrated circuit, can change the frequency of oscillation of each CPP oscillator by the lead that applies external magnetic field shown in Fig. 5 to 7 is provided.
[embodiment 5]
To the high-frequency integrated circuit that high-frequency generator is connected be described in this embodiment.The plane graph of this high-frequency integrated circuit and stepped construction are with identical shown in Figure 10 A and the 10B.Just, form CMOS transistor and CCP-CPP oscillator on the Si substrate, a plurality of CCP-CPP oscillators 53 are arranged on the surface of Si substrate regularly.As shown in figure 14, a plurality of CCP- CPP oscillator 53a, 53b, 53c, 53d and 53e are connected in series on the power supply 54, form high-frequency integrated circuit by such structure.Can improve vibration output by a plurality of CCP-CPP oscillators of connecting by this way.
Equally in this case, the high-frequency integrated circuit of the series connection of Figure 14 demonstration can be made without the CCP-CPP oscillator by using conventional CPP oscillator.
[embodiment 6]
Figure 15 has shown the system construction of use according to the trailer-mounted radar of millimeter wave (or microwave) wave band of the high-frequency generator of present embodiment.This system has the millimeter wave transmit/receive module 61 that wherein has according to the high-frequency generator of present embodiment, be used to handle the analog circuit 62 of the signal of transmit/receive module 61, be used to carry out the transducer 63 of analog-to-digital conversion and number-Mo conversion, digital signal processor (DSP) 64 and being used to carries out to external world's emission and the communication agency 65 that receives from the external world.
Figure 16 shows the circuit diagram more specifically of the trailer-mounted radar of FM-CW radar scheme.Figure 17 shows the signal waveform of this radar.What these signal waveforms showed is the situation of radar near target.
Launch by transmitting antenna 73 conducts and the proportional FM modulating wave of output voltage from the transmitted wave of generator 71 with from the carrier wave of oscillator 72.This transmitted wave is sent to radar signal analyzer 80.After frequency mixer 75 combinations, obtain beat signal from the reflecting object reflection and by the reception ripple of reception antenna 74 receptions and the part of transmitted wave.This beat signal is sent to radar signal analyzer 80 by preamplifier 76, intermediate frequency amplifier 77, filter 78 and waveform detector 79.Beat signal comprises and proportional phase lag of target range (Dt among Figure 17) and the Doppler frequency shift (Df Figure 17) from taking place with the relative velocity of target.Dt and Df can calculate by the difference on the frequency (δ fu, δ fd) of beat signal when modulating frequency increases and reduce.Can obtain on the basis of this calculated value and target between distance and relative velocity.
Figure 18 has shown the exemplary configurations of the millimeter wave trailer-mounted radar of the FM-CW radar scheme that is operated in certain characteristic frequency.During emission, emission output is by 19-GHz-frequency band oscillator 81,19-GHz-band power amplifier 82,19/38-GHz frequency multiplier 83,38-GHz power amplifier 84,38/76-GHz frequency multiplier 85 and 86 emissions of 76-GHz-band power amplifier.During reception, receive input and receive, obtain the output of IF-frequency range by 76-GHz-frequency band low noise amplifier 88 and receiving mixer 89 by 76-GHz-frequency band conversion device 87.
Figure 19 has shown the exemplary configurations of the millimeter wave trailer-mounted radar of the pulse Doppler scheme that is operated in certain characteristic frequency.During emission, emission output is by 19-GHz-frequency band oscillator 91,19-GHz- band power amplifier 92,19/38-GHz frequency multiplier 93,38-GHz power amplifier 94,38/76-GHz frequency multiplier 95,76-GHz- band power amplifier 96 and 97 emissions of 76-GHz transducer.During reception, receive input and receive, obtain the output of IF-frequency range by 76-GHz-frequency band low noise amplifier 98 and receiving mixer 99 by 76-GHz-frequency band conversion device 97.
The high-frequency generator that shows among Fig. 1 is used as the oscillator 81 and 91 that shows among Figure 18 and Figure 19 and uses, so can realize than using conventional oscillator that the compacter trailer-mounted radar of simple circuit configuration is arranged more cheaply.Its frequency is not limited to said frequencies, and according to available Frequency Distribution, can be operated in from tens of GHz to hundreds of GHz according to the high-frequency generator of present embodiment, until the very wide frequency range of several THz etc.
What Figure 20 showed is the automobile 110 that loads according to the trailer-mounted radar device 100 of present embodiment.According to above-mentioned principle, can obtain distance 115 and relative velocity from automobile 110 to barrier.
It was once very difficult to make compact conventional trailer-mounted radar, had therefore also fixed its installation site.For example, if conventional trailer-mounted radar is contained on the preceding grid of water tank, this position is too low, just can not detect the position of vehicles such as truck well.On the contrary, can make compactly, therefore can be installed to any position on the automobile, be not limited to water tank grid or hood according to the trailer-mounted radar of present embodiment.Because like this, the trailer-mounted radar according to present embodiment can be installed on the automobile of low side equally.
[embodiment 7]
Figure 21 shows is a kind of vehicle-to-vehicle communication equipment according to present embodiment.Comprise the front and rear of being installed to each automobile 110 according to the trailer-mounted radar equipment 100 of the CCP-CPP oscillator of present embodiment.In this equipment, can realize two-way communication between the two automobiles 110, automobile is controlled and keeps fixed range between two cars under steam, thereby realizes intelligent transportation system (ITS).
Owing to can make compactly according to the tranmission/reception apparatus of present embodiment, the degree of freedom of its installation site is big, and then its protection structure windproof, rainproof and snow defence just can simplify greatly, and its price also will be reduced.
[embodiment 8]
Figure 22 shown a kind of according to this example information terminal to terminal communication equipment.Comprise according to the tranmission/reception apparatus 105 of CCP-CPP oscillator of the present invention and being installed on each portable information terminal 120, thereby can carry out the two-way communication of simple near field.Owing to use high-frequency, therefore contain much information, near field high-speed radio electronic data communications is very convenient.
For veteran in the art personage, other advantages of the present invention and improvement can be easy to realize.So, the present invention its widely various aspects be not limited to that this paper shows and the detail and the representational embodiment of narration.Therefore, can carry out various modifications and not deviate from the spirit and scope of the general conception of the present invention that defines by attached claim and equivalent thereof.

Claims (12)

1. a high-frequency generator is characterized in that, this high-frequency generator comprises:
A plurality of high-frequency oscillators, this high-frequency oscillator comprise that its direction of magnetization is by the magnetic quilt fixed bed of basic fixed in a direction; The oscillating layer that when being provided electric current, produces HFO that forms by magnetic material; Be arranged on the intermediate layer between described magnetic quilt fixed bed and the described oscillating layer, this intermediate layer comprises insulating barrier and passes through the current path of this insulating barrier at thickness direction; Provide the electrode of electric current with a pair of plane perpendicular to the laminate film that comprises magnetic quilt fixed bed, intermediate layer and oscillating layer;
Wherein said a plurality of high-frequency oscillator has the area ratio and the different frequencies of oscillation of the different described current paths in described intermediate layer.
2. oscillator as claimed in claim 1 is characterized in that, the described diameter that passes through the current path of insulating barrier at thickness direction is that 0.5nm is to 10nm.
3. oscillator as claimed in claim 1 is characterized in that described insulating barrier is formed by the material of selecting the group that constitutes from oxide, nitride and nitrogen oxide, comprises from Al, Hf, Zr, Ti, Ta, Mo, W, Nb, at least a element of selecting in the group that Si and Mg constitute.
4. oscillator as claimed in claim 1 is characterized in that, described current path is by from comprising Cu, Ag, and Co, the metal material of selecting in the group of Fe and Ni forms.
5. oscillator as claimed in claim 1 is characterized in that, described insulating barrier has 0.8 to 3.5nm thickness.
6. oscillator as claimed in claim 1 is characterized in that, all by comprising from Co, the magnetic material of at least a element of selecting in the group that Fe and Ni constitute forms for described magnetic quilt fixed bed and described oscillating layer.
7. oscillator as claimed in claim 1 is characterized in that, described current path is formed on the central area that constitutes described magnetic quilt fixed bed or the crystal grain of described oscillating layer thereunder is set.
8. a high-frequency integrated circuit is characterized in that, described high-frequency integrated circuit comprises a plurality of high-frequency generators as claimed in claim 1, and described a plurality of high-frequency generators form on same substrate, and is electrically connected with the form of in parallel and/or series connection.
9. circuit as claimed in claim 8 is characterized in that, each in described a plurality of high-frequency generators all is electrically connected on the semiconductor transistor.
10. a trailer-mounted radar device is characterized in that, this trailer-mounted radar device comprises high-frequency generator as claimed in claim 1.
11. a vehicle-to-vehicle communication equipment is characterized in that, this vehicle-to-vehicle communication equipment comprises high-frequency generator as claimed in claim 1, and described high-frequency generator is installed on many automobiles, and is configured to steer motor to keep the distance between the automobile.
12. an information terminal is to terminal communication equipment, it is characterized in that, this information terminal comprises high-frequency generator as claimed in claim 1 to terminal communication equipment, this high-frequency generator is installed in a plurality of information terminals, and is configured to and can carries out near-field communication between described a plurality of information terminals.
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