CN100530510C - An electrodeless RF induction coupled plasma dischargable atomic source - Google Patents
An electrodeless RF induction coupled plasma dischargable atomic source Download PDFInfo
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- CN100530510C CN100530510C CNB2007100178589A CN200710017858A CN100530510C CN 100530510 C CN100530510 C CN 100530510C CN B2007100178589 A CNB2007100178589 A CN B2007100178589A CN 200710017858 A CN200710017858 A CN 200710017858A CN 100530510 C CN100530510 C CN 100530510C
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- grid
- reaction chamber
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- screen
- shield shell
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Abstract
The disclosed electrode-free RF-induction coupling plasma discharging-type atom source comprises: the RF power source, the matched network, and a screening shell, wherein in the shell, there is a discharging reaction chamber connecting with the reaction gas inlet on shell, a RF induction coil on outer wall of chamber, a three-grid system (screen grid, acceleration grid and deceleration grid) is set on another end of the chamber, a deflection plate is set on front of the three-grid system, and a neutralizer is arranged out of the shell. In this invention, the particle beams energy < 500eV, radial beam current nonuniformity < +-5%, normal working background vacuum degree < 10-4Pa, working reaction chamber vacuum degree < 10-2Pa, gas utility > 80%. This invention can be applied to Ar, N2, O2, NH3, and NO gas.
Description
Technical field
The invention belongs to fields such as optical coating, semiconductive thin film research and manufacturing, the key equipment that relates to a kind of optical coating, semiconductive thin film assistant depositing and material, device performance modification, be particularly related to a kind of electrodeless RF induction coupled plasma dischargable atomic source, it is based on the accessory of low pressures such as pulsed laser deposition or laser molecular beam epitaxial device or high vacuum system.
Background technology
Since beam-plasma is derived from and produces the sixties in 20th century, numerous technologies such as injection, microfabrication, assisted deposition of the surface of solids have been applied to.Along with surface and thin film technique development, plasma technique is widely used in fields such as materials processing, optics assisted deposition, semiconductive thin film assisting growth and semi-conducting material and device modification in recent years.The plasma beam source that adopts in industry at present electrodelessly is divided into electrodeless and electrode two classes is arranged by having, and can be divided into direct-current discharge, capacitive coupling and inductance coupling high etc. again by starting the arc mode.Parameters such as beam-plasma density, energy have good controllability, adopt ion source can improve the adhesion between substrate and rete, the defective that reduces film growth, the density that improves film and optics, the electric property that improves film.
In some SEMICONDUCTING THIN FILM TECHNOLOGY (as superlattice structure, quantum well or the like), because the thickness of film is less than tens nanometers, even several nanometers, and the thousands of at least electronvolt of ionogenic particle beams energy, the high-octane particle beams like this causes damage can for film or device; On the other hand, in the doping process of semiconductive thin film, in order to improve the activity of foreign atom, also need the ionization of gas molecule, do not introduce simultaneously new impurity again, therefore, cleaning, free of contamination wide beam, low energy ion beam/atomic beam source become the necessaries of preparation high-performance, high-quality semiconductor film and semi-conducting material modification gradually.
The base vacuum degree lower (perhaps price comparison costliness) in existing domestic and international ions/atoms source is generally less than 10
-4Pa, operating air pressure can be applicable in the low vacuum systems (hyperbar) such as filming equipment, magnetron sputtering generally at 0.1Pa～10Pa.For system is ultra high vacuum (background＜10
-4Pa) semiconductor equipment as systems such as molecular beam epitaxy, pulsed laser depositions, then is difficult to satisfy the requirement of system's operate as normal; Simultaneously, most ion sources adopt the built-in electrodes discharge, easily semi-conducting material is polluted, and consumption of electrode can reduce ion source useful life.
Summary of the invention
The objective of the invention is to, a kind of electrodeless RF induction coupled plasma dischargable atomic source is provided, this atomic source can be under low air pressure condition (base vacuum＜10
-4Pa, reative cell vacuum～10
-3Pa) work.
In order to realize above-mentioned task, the utility model is taked following technical solution:
A kind of electrodeless RF induction coupled plasma dischargable atomic source, comprise radio frequency power source and the network that is complementary with radio frequency power source, it is characterized in that: also comprise a shield shell, cooling water turnover pipe and reacting gas mouth are arranged on the described shield shell, the reacting gas oral area is equipped with the micropore grid, there is the exoelectrical reaction chamber in central authorities in shield shell, on the outer wall of described exoelectrical reaction chamber around the radio frequency induction coil of certain number of turn, exoelectrical reaction chamber one end is communicated with reacting gas mouth on the shield shell, the exoelectrical reaction chamber other end is respectively equipped with screen, the three grid extraction systems that accelerating grid and decelerating screen constitute, the front end of three grid extraction systems is equipped with the deflection pole plate, at screen, accelerating grid and decelerating screen respectively have extraction voltage; In the outside of shield shell, also be provided with one and be used for producing and the averager of electronics.
The present invention adopts electrodeless radio frequency discharge mode, and the working gas that feeds quartz or alundum (Al exoelectrical reaction chamber is carried out ionization, forms stable plasma; Adopt three grid extraction system article on plasma bodies to draw then, can obtain the particle beam of corresponding beam diameter and energy by the extraction voltage of regulating three grids; In producing by averager at last and electronics, make ion beam current become the atomic current of atomic state or, consume cation and electronics, obtain the neutral atom line by front end deflection pole plate.
The characteristics of this atomic source are: (1) operating air pressure is low, can be in vacuum degree 10
-3The normal starting the arc under the Pa condition; (2) adopt the electrodeless discharge mode, pollution-free; (3) adopt two kinds of extraction systems, can between atomic source and ion source, switch arbitrarily; (4) the atomic beam energy is low, can regulate between 100～500eV; (5) the atomic beam beam diameter is wide, can reach 3 inches (7.62 centimetres), bundle good uniformity, radially inhomogeneities＜± 5%.Its main performance index all satisfies the low vacuum system requirements, and simple in structure, and cost is lower; Simultaneously, this atomic source can also be applied to laser molecular beam epitaxy (L-MBE), pulsed laser deposition high vacuum systems such as (PLD).
It is two kinds of execution modes that this atomic source produces atomic beam: (1) is passed through in the hot tungsten filament averager generation and electronics, makes ion beam current become the atom line of atomic state; (2), make cation and depleted of electrons in the ion beam current, and obtain the neutral atom line by drawing the DC-shift battery lead plate of grid front end.
Description of drawings
Fig. 1 is a radio frequency atomic source fundamental diagram of the present invention.
Fig. 2 is a radio frequency atomic source structure chart of the present invention.
Fig. 3 is the present invention's three grid extraction system structure principle charts.
Fig. 4 draws the grid structure chart for micropore.
Fig. 5 is the present invention's beam behaviour curve under different extraction voltages.
The present invention is described in further detail below in conjunction with accompanying drawing.
Embodiment
When optical coating, semiconductor film film preparation and semi-conducting material and device modification, use atomic source ionization reacting gas effectively, can obviously reduce the material intrinsic defect, improve thin film crystallization quality and optics, electric property; In addition, adopt low-energy atomic source ionization reacting gas, can improve the activity of doped source, make foreign atom obtain enough energy, can avoid the shortcoming that the ion source energy is too high, damage lattice simultaneously again, obtain desirable doping type semiconductor.
Electrodeless RF induction coupled plasma dischargable atomic source of the present invention, have pollution-free (electrodless discharge), the low particle beams can (＜500eV), bundle good uniformity advantages such as (radially line inhomogeneities＜± 5%).
Operate as normal base vacuum degree＜10 of this atomic source
-4Pa, reative cell vacuum degree 10 during ventilation
-3Pa can be used for Ar, N
2, O
2, NH
3, working gas such as NO ionization, gas effciency＞80%.
As shown in Figure 1, Fig. 1 is a radio frequency atomic source fundamental diagram of the present invention, system's base vacuum degree is maintained to＜and 10
-4Pa; Comprise that exoelectrical reaction chamber, working gas feed the exoelectrical reaction chamber by needle-valve, the exoelectrical reaction chamber connects the network that is complementary with radio frequency power source, the exoelectrical reaction chamber produces electronics and ion, draws ion by extraction system, makes ion beam current become the atom line of atomic state by averager.
During work, the air pressure that feeds gas should be not less than 10
-3Pa; Gaseous species is: Ar, N
2, O
2, NH
3, NO etc. or its mist.
As shown in Figure 2, this atomic source comprises radio frequency power source matches criteria network, also comprise a shield shell 4, cooling water turnover pipe and reacting gas mouth are arranged on the shield shell 4, the reacting gas oral area is equipped with the micropore grid, there is exoelectrical reaction chamber 6 in central authorities in shield shell 4, be the radio frequency induction coil of 5 circles around the number of turn on the outer wall of described exoelectrical reaction chamber 6, exoelectrical reaction chamber 6 one ends are communicated with reacting gas mouth on the shield shell 4, exoelectrical reaction chamber 6 other ends are respectively equipped with screen 1, the three grid extraction systems that accelerating grid 2 and decelerating screen 3 constitute, the front end of three grid extraction systems is equipped with the deflection pole plate, at screen 1, accelerating grid 2 and decelerating screen 3 respectively have extraction voltage; In the outside of shield shell 4, also be provided with one and be used for producing and the averager 5 of electronics.
Main body places on the standard C F63/100 flange, and shield shell 4 adopts stainless steel, and the outer electrode on the CF63/100 flange adopts the ceramic-metal process for sealing to be connected with the CF63/100 flange, can keep higher base vacuum degree (air pressure＜10
-4Pa).
Quartz or alundum (Al material are adopted in exoelectrical reaction chamber 6, and the radio-frequency coil of certain number of turn is surrounded on reacting outdoor wall.When working gas enters reative cell, as shown in Figure 2, to open radio frequency power source, and regulate radio frequency matching network, this moment, the radio frequency induction coil produced axially and alternating electric field radially, made gas molecule collision ionization to form stable plasma;
This atomic source adopts micropore three grid extraction systems as shown in Figure 3: screen 1 connects positive voltage, and the plasma in the reative cell is pulled out from plasma sheath; Accelerating grid 2 connects negative voltage, makes that the cation in the plasma quickens; Decelerating screen 3 connecting to neutral voltage or positive voltages, the speed of regulating beam diameter and ion flow obtains the particle beam of corresponding beam diameter and energy; In producing by averager at last and electronics, make ion beam current become the atom line of atomic state or adopt deflecting electrode to consume cation and electronics in the ion beam current, obtain the neutral atom line.
These atomic source operate as normal base vacuum degree＜10
-4Pa, reative cell vacuum degree＜10 during work
-2Pa adopts different lead-out modes, can switch between atomic source and ion source.
It is two kinds of execution modes that this atomic source produces atomic beam: (1) is passed through in the hot tungsten filament averager generation and electronics, makes ion beam current become the atom line of atomic state; (2), make cation and depleted of electrons in the ion beam current, and obtain the neutral atom line by drawing the DC-shift battery lead plate of grid front end.
Claims (4)
1. electrodeless RF induction coupled plasma dischargable atomic source, comprise radio frequency power source and the network that is complementary with radio frequency power source, it is characterized in that: also comprise a shield shell (4), cooling water turnover pipe and reacting gas mouth are arranged on the described shield shell (4), the reacting gas oral area is equipped with the micropore grid, there is exoelectrical reaction chamber (6) in central authorities in shield shell (4), be the radio frequency induction coil of 5 circles around the number of turn on the outer wall of described exoelectrical reaction chamber (6), exoelectrical reaction chamber (6) one ends are communicated with reacting gas mouth on the shield shell (4), exoelectrical reaction chamber (6) other end is respectively equipped with screen (1), the three grid extraction systems that accelerating grid (2) and decelerating screen (3) constitute, the front end of three grid extraction systems is equipped with the deflection pole plate, in screen (1), accelerating grid (2) and decelerating screen (3) respectively have extraction voltage; Outside in shield shell (4) also is provided with one and is used for producing and the averager (5) of electronics.
2. electrodeless RF induction coupled plasma dischargable atomic source as claimed in claim 1 is characterized in that, the material of described exoelectrical reaction chamber (6) is selected quartz or alundum (Al.
3. electrodeless RF induction coupled plasma dischargable atomic source as claimed in claim 1, it is characterized in that, the extraction voltage of described screen (1) is a positive voltage, and the extraction voltage of accelerating grid (2) is a negative voltage, and the extraction voltage of decelerating screen (3) is no-voltage or positive voltage.
4. electrodeless RF induction coupled plasma dischargable atomic source as claimed in claim 1 is characterized in that, described shield shell (4) is a stainless steel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100178589A CN100530510C (en) | 2007-05-15 | 2007-05-15 | An electrodeless RF induction coupled plasma dischargable atomic source |
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|---|---|---|---|
| CNB2007100178589A CN100530510C (en) | 2007-05-15 | 2007-05-15 | An electrodeless RF induction coupled plasma dischargable atomic source |
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| Publication Number | Publication Date |
|---|---|
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| CN100530510C true CN100530510C (en) | 2009-08-19 |
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Cited By (1)
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| CN108915969A (en) * | 2018-07-18 | 2018-11-30 | 北京理工大学 | A kind of multi-mode helicon ion thruster |
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Cited By (1)
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| CN108915969A (en) * | 2018-07-18 | 2018-11-30 | 北京理工大学 | A kind of multi-mode helicon ion thruster |
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| CN101060060A (en) | 2007-10-24 |
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