CN112428026B - Pulse control beam diameter adjustable ion beam processing method based on surface shape error frequency band - Google Patents
Pulse control beam diameter adjustable ion beam processing method based on surface shape error frequency band Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/002—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using electric current
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
Abstract
The invention discloses an ion beam processing method for pulse control adjustable beam diameter based on a surface shape error frequency band, which determines processing errors according to a surface shape measurement result to calculate target beam diameter and residence time of each grid, and sequentially shapes each grid of a processed element based on the target beam diameter and the residence time through an optical processing system, thereby realizing the processing of leading out ion beams at regular time and fixed beam diameter, avoiding sputtering and removing the whole surface shape by a single frequency band in the single processing of the traditional ion beam, bringing residual error under cut-off frequency and residence time error caused by the fact that the dynamic performance of a machine tool cannot reach ideal conditions, and the like, achieving the purpose of high-precision shaping, simultaneously improving the processing efficiency, being beneficial to improving the processing precision, saving raw materials and reducing the production cost. The method has the advantages of high precision and efficiency, strong operability, strong economic practicability, simple process flow and the like.
Description
Technical Field
The invention belongs to the technical field of ion beam ultra-precision machining, and particularly relates to a pulse control beam diameter adjustable ion beam machining method based on a surface shape error frequency band.
Background
With the continuous development of optical systems, modern optical systems have increasingly high requirements on component precision and processing efficiency, and the demand for high-precision optical components in engineering practice is increasing, which means that advanced optical component manufacturing equipment and processes face efficient processing challenges. The ion beam shape modification technology is used as a high-certainty shape modification method, and high-speed Ar is used+The surface of the element is bombarded to remove the atomic scale, the removal amount of the surface material of the element is controlled by controlling the length of the residence time, the sub-nanometer precision processing can be realized in principle, and the precision requirement of most optical elements is met. Although experience, both theoretical and engineering practice, has shown that ion beam machining methods are more traditional than hand polishing and computer-controlled optical surface based techniques (C)omputer Controlled Optical polishing (CCOS) method has higher shaping precision, but the current ion beam still has a great space for improving the processing efficiency due to low removal efficiency.
At present, the beam diameter is not adjustable during ion beam processing, and the incident energy of ions is kept unchanged. Only part of low-frequency errors can be removed in single iteration, and the surface shape of an element is difficult to effectively converge. In the processing of a medium-caliber optical element (taking a 400mm multiplied by 300mm cylindrical monocrystalline silicon mirror as an example), the processing time of a single time can reach 20h, after low-frequency errors are removed by multiple times of iterative processing, the surface shape convergence rate is low, the beam diameter is reduced by replacing a diaphragm with a smaller beam diameter, a high-frequency removal function is replaced, the high-frequency errors are removed, and the complete processing period is calculated by taking months as a unit. When the high frequency error of the surface is large, the excessive residence time is wasted on the high frequency error, and the processing efficiency is greatly reduced.
The beam diameter of ion beam processing is changed by basically replacing the diaphragm for removing the medium and high frequency band errors at present, the preparation period of each processing is long, and thus the efficiency of removing the high frequency errors is greatly reduced. When the high-frequency error is removed, the machine tool is required to have enough dynamic performance, so that the residence time is accurately realized, and if the machine tool cannot remove the medium-high frequency error, the surface shape is even poor.
According to the ion source sputtering theory and the existing removal function model, when single processing is carried out, different beam diameters are adjusted by using the pulse voltage of the grid mesh according to the error frequency band of the surface shape, the full-frequency-band error of the surface shape is processed and removed, the ion beam processing efficiency can be improved, the removal function beam diameter is changed by changing the voltage of the screen grid, the diaphragm replacement can be greatly reduced, and the full-frequency-band error processing time is carried out again.
From the above, the conventional dc ion source processing mode has the following disadvantages: (1) the multi-band error removal efficiency is low, and the production requirement of the optical element cannot be met; (2) the dynamic characteristics of the machine tool are difficult to reach ideal conditions, the residence time generates errors, error residues are caused, and even additional errors are introduced. (3) In the processing process, the ion beam is continuously led out, and the whole surface shape is removed by sputtering, so that the surface shape convergence is influenced. Above shortcoming has caused ion beam machining system in use can't effectively get rid of the error height, is difficult for the accurate control of volume of getting rid of moreover to influenced ion beam processingquality, increased the iterative process, changed the diaphragm and wasted a large amount of time, influenced machining efficiency. Therefore, it is a key technical problem to be solved urgently by those skilled in the art to provide a method for processing an ion beam with a pulse-controlled adjustable beam diameter based on a surface shape error frequency band.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: aiming at the problems in the prior art, the invention provides the pulse control beam diameter adjustable ion beam processing method based on the surface shape error frequency band, which realizes the purpose of leading out the ion beam at regular time and fixed beam diameter for processing, avoids the residual error under the cut-off frequency and the residence time error caused by the situation that the dynamic performance of a machine tool cannot reach the ideal condition because the whole surface shape is removed by sputtering in a single frequency band in the single processing of the traditional ion beam, and the like, achieves the purpose of high-precision trimming and adjustment, simultaneously improves the processing efficiency, is beneficial to improving the processing precision, saves the raw materials and reduces the production cost. The method has the advantages of high precision and efficiency, strong operability, strong economic practicability, simple process flow and the like.
In order to solve the technical problems, the invention adopts the technical scheme that:
a pulse control beam diameter adjustable ion beam processing method based on a surface shape error frequency band comprises the following steps:
1) extracting a removal function model of the optical processing system to obtain removal functions R (x, y) under different beam diameters d;
2) extracting an initial surface shape error of the element to be processed, and determining a removal quantity function H (x, y) of the element to be processed;
3) carrying out error calculation on the initial surface shape error of the element to be processed to obtain error frequency band distribution, grading according to the error frequency band in the error frequency band distribution, and determining a target beam diameter d with shape correction capability aiming at each grade of error frequency band;
4) dividing the element to be processed into grids according to the removal amountThe function H (x, y) yields an arbitrary ith grid (x)i,yi) Removal amount of H (x)i,yi) And determining the grid (x)i,yi) Corresponding target beam diameter di(ii) a According to the removal amount H (x)i,yi) Target beam diameter diThe removal function R (x, y) at the lower level is solved to the grid (x)i,yi) Dwell time t (x)i,yi)；
5) Sequentially aligning each grid (x) of the element to be machined by means of an optical machining systemi,yi) Based on target beam diameter diAnd a residence time t (x)i,yi) Carrying out shape modification;
6) judging whether the surface shape of the machined element meets the requirement, and if not, skipping to execute the step 2) to continue iterative machining; otherwise, end and exit.
Optionally, the optical processing system is a dual-gate ion optical processing system, and the step 1) of extracting the removal function model of the optical processing system further includes determining a mapping relationship between an amplitude of a screen gate voltage E of the dual-gate ion optical processing system and a beam diameter d of a removal function R (x, y), where the screen gate voltage E is a pulse voltage signal; step 4) solving the grid (x)i,yi) Dwell time t (x)i,yi) The method also includes determining a residence time t (x)i,yi) Corresponding duty cycle Di(ii) a For arbitrary grid (x) in step 5)i,yi) Based on target beam diameter diAnd a residence time t (x)i,yi) The step of modifying comprises:
5.1) judging the grid (x)i,yi) If the shape is not required to be modified, controlling the screen grid voltage E of the double-grid ion optical processing system to be low level, so that the ion source of the double-grid ion optical processing system does not lead out ion beam current at the position, moving to the next grid according to the specified movement speed, ending and exiting; if the shape is required to be modified, skipping to execute the next step;
5.2) controlling the screen grid voltage E of the double-grid ion optical processing system to be the duty ratio DiAnd the amplitude of the screen grid voltage ETarget beam diameter diThe mapping relation between the amplitude of the screen grid voltage E and the beam diameter d of the removal function R (x, y) is satisfied, so that the ion source of the dual-grid ion optical processing system leads out a pair grid (x, y) at the positioni,yi) And the ion beam with the shape modification capability moves to the next grid according to the specified movement speed after the machining is finished.
Optionally, when the classification is performed according to the error frequency bands in the error frequency band distribution in step 3), the multistage error frequency bands obtained by the classification include an error low frequency band, an error middle frequency band, and an error high frequency band.
Optionally, the step 4) of dividing the machined element into grids specifically refers to dividing the whole surface shape of the machined element into n square grids with the side length of a.
In addition, the invention also provides an optical processing system, which comprises a double-grid ion optical processing system, a pulse modulator and a control unit, wherein a control signal output end of the control unit is connected with a pulse voltage control end of a screen grid of the double-grid ion optical processing system through the pulse modulator, and the control unit is programmed or configured to execute the step of the pulse control beam diameter adjustable ion beam processing method based on the surface shape error frequency band.
In addition, the invention also provides an ion beam processing device for controlling the adjustable beam diameter based on the pulse of the surface shape error frequency band, which comprises a microprocessor and a memory which are connected with each other, wherein the microprocessor is programmed or configured to execute the steps of the ion beam processing method for controlling the adjustable beam diameter based on the pulse of the surface shape error frequency band, or the memory is stored with a computer program which is programmed or configured to execute the ion beam processing method for controlling the adjustable beam diameter based on the pulse of the surface shape error frequency band.
In addition, the present invention also provides a computer readable storage medium having a computer program stored therein, the computer program being programmed or configured to execute the method for surface-shape-error-band-based pulse-controlled beam-diameter-adjustable ion beam processing.
Compared with the prior art, the invention has the following advantages:
1. the invention determines the processing error according to the surface shape measurement result to resolve each grid (x)i,yi) Target beam diameter d ofiAnd a residence time t (x)i,yi) And sequentially aligning each grid (x) of the element to be processed by the optical processing systemi,yi) Based on target beam diameter diAnd a residence time t (x)i,yi) The shape modification is carried out, so that the ion beam is led out at fixed time and fixed beam diameter for processing, the phenomenon that the whole surface shape is sputtered and removed in a single frequency band during single processing of the traditional ion beam is avoided, the residual error under the cut-off frequency and the residence time error caused by the fact that the dynamic performance of a machine tool cannot reach the ideal condition are caused, the purpose of high-precision modification is achieved, the number of times of changing a diaphragm is reduced, the processing preparation time is saved, the processing efficiency is improved, the processing precision is improved, raw materials are saved, the high precision and the efficiency are combined, the influence on the dynamic performance of the machine tool is reduced, and the production cost is saved; strong operability, strong economic practicability, simple process flow and the like.
Drawings
FIG. 1 is a schematic diagram of a basic flow of a method according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of the removal function R (x, y) under the partial beam diameter d extracted in the embodiment of the present invention.
FIG. 3 is a diagram illustrating an initial profile error of a machined component according to an embodiment of the present invention.
FIG. 4 is a diagram illustrating an error band distribution according to an embodiment of the present invention
Fig. 5 is a schematic diagram illustrating modification of ion beams with different beam diameters according to an embodiment of the present invention.
Fig. 6 is a schematic structural diagram of a dual-gate ion optical system in an embodiment of the present invention.
Fig. 7 is a schematic diagram of different beam diameters drawn by different gate voltages in the embodiment of the present invention.
Fig. 8 is a schematic diagram of controlling the gate voltage by the pulse voltage signal according to the embodiment of the present invention.
Fig. 9 is a schematic diagram of an ion beam current extraction in an embodiment of the present invention.
Fig. 10 is a schematic diagram of turning off ion beam current in an embodiment of the present invention.
Fig. 11 is a diagram illustrating a trimming result finally obtained in the embodiment of the present invention.
Detailed Description
The ion beam processing method based on the surface shape error frequency band pulse control adjustable beam diameter of the invention will be further described in detail by taking a sample with a certain size of phi 100 x 5mm as an example.
As shown in fig. 1, the method for processing an ion beam with an adjustable beam diameter based on the pulse control of the surface shape error frequency band in this embodiment includes:
1) extracting a removal function model of the optical processing system to obtain removal functions R (x, y) under different beam diameters d, and fig. 2 is a schematic diagram of the removal functions R (x, y) under a part of the beam diameters d obtained in this embodiment;
2) extracting the initial surface shape error of the element to be processed (as shown in FIG. 3), and determining the removal function H (x, y) of the element to be processed; detecting the surface shape of the element to be processed by using related detection equipment to obtain the distribution condition of an initial surface shape error, wherein the initial surface shape error comprises a spatial error height Z (x, y) and a frequency band f (x, y) thereof, and a removal function H (x, y) of the element to be processed can be determined according to the spatial error height Z (x, y);
3) carrying out error calculation on the initial surface shape error of the element to be processed to obtain error frequency band distribution, grading according to the error frequency band in the error frequency band distribution, and determining a target beam diameter d with shape correction capability aiming at each grade of error frequency band;
the method comprises the steps of carrying out error calculation on an initial surface shape error of a machined element to obtain error frequency band distribution, carrying out error calculation according to a frequency band f (x, y) to obtain the error frequency band distribution, then carrying out grading according to the error frequency band in the error frequency band distribution, and determining a target beam diameter d with shape modification capacity aiming at each grade of error frequency band, so that when an ion beam moves to the error position according to the error frequency bands of different points, an optimal removal function beam diameter is selected for machining and removal.
4) Dividing the element to be processed into grids, and obtaining any ith grid (x) according to the removal function H (x, y)i,yi) Removal amount of H (x)i,yi) And determining the grid (x)i,yi) Corresponding target beam diameter di(ii) a According to the removal amount H (x)i,yi) Target beam diameter diThe removal function R (x, y) at the lower level is solved to the grid (x)i,yi) Dwell time t (x)i,yi)；
5) Sequentially aligning each grid (x) of the element to be machined by means of an optical machining systemi,yi) Based on target beam diameter diAnd a residence time t (x)i,yi) Carrying out shape modification;
6) judging whether the surface shape of the machined element meets the requirement, and if not, skipping to execute the step 2) to continue iterative machining; otherwise, end and exit.
As an optional implementation manner, when the classification is performed according to the error frequency band in the error frequency band distribution in step 3), the multistage error frequency bands obtained by the classification include an error low frequency band, an error middle frequency band, and an error high frequency band. In this embodiment, when the classification is performed according to the error frequency band in the error frequency band distribution, the surface-shaped error wavelength λ is determined according to λ>33mm is a low frequency band, 0.12mm<λ<33m is the middle frequency band, λ<0.12mm is a high frequency band, and a low frequency error, a medium frequency error and a high frequency error are respectively solved, the obtained error distribution is shown in fig. 4, the low frequency error is an error of a low frequency band of error, the medium frequency error is an error of a medium frequency band of error, and the high frequency error is an error of a high frequency band of error. Obtaining (x) of different grid areas according to the error calculation resulti,yi) If the grid region error is a high-frequency band, the corresponding ion optical system draws an ion beam with shape correction capability for the high-frequency band error, and the corresponding region is a middle-frequency band, and also draws an ion beam with a corresponding beam diameter to process the surface shape, as shown in fig. 5.
In this embodiment, the step 4) of dividing the machined element into grids specifically means dividing the entire surface shape of the machined element into n square grids with a side length of a. Setting the optimal motion speed V of the ion source guide rail according to the dynamic characteristics of the machine tool1(the optimum movement speed is the maximum speed at which the guide rail moves steadily). In the last grid (x)i，yi) After the resident processing is finished, the voltage of the screen grid is adjusted to be a low potential, the ion outlet is closed until the guide rail moves to the next grid (x)i+1，yi) After the center, if processing is needed, the voltage of the screen grid is adjusted to be high potential, if two adjacent grids need to be processed, the low potential is kept for time T1＝a/V1Where a is the side length of the grid.
Relevant studies show that the low beam diameter removal function can be adopted for removing the medium-high frequency error. The existing direct current ion source has a single processing mode, and generally only a single beam path is used for processing full-band errors. The low beam diameter shaping function has low removal efficiency, usually a larger beam diameter is adopted for shaping, and when the area convergence rate is low, the removal function with a lower beam diameter is considered to be replaced for shaping. As shown in fig. 5, for the profile error distribution, the large beam diameter removal function is used to remove the low frequency error, and then the low beam diameter removal function is replaced to remove the high frequency error. When the high frequency error of the surface is large, the excessive time is wasted in changing and removing the beam diameter of the function, and the processing efficiency is greatly reduced. In view of the above problem, the optical processing system in this embodiment is a dual-gate ion optical processing system, as shown in fig. 6, the dual-gate ion optical processing system includes a screen gate and an accelerating gate, and when an ion beam current needs to be extracted, a forward electric field E is formed between the screen gate and the accelerating gate1，Ar+The ions can enter an electric field between the screen grid and the accelerating grid, and the ions are accelerated by the electric field to form ion beam current with certain removal capacity. Research finds that for a double-gate ion optical processing system, a mapping relation exists between the amplitude of a screen gate voltage E and the beam diameter d of a removal function R (x, y), and a mapping relation exists between the beam diameter d of the removal function R (x, y) and the shape modification capability of the removal function R (x, y), so that a mapping relation also exists between the amplitude of the screen gate voltage E and the shape modification capability of the removal function R (x, y), referring to fig. 7, when the screen gate voltage is 700V, the extracted ion beam has a larger beam diameter, the removal function has the shape modification capability only for low-frequency band errors, along with the continuous increase of the screen gate voltage, the extracted ion beam diameter is smaller and smaller, and when the screen gate voltage reaches 1100V, the extracted ion beam has the shape modification capability for high-frequency band errorsAnd (4) the shape correction capability of section errors. Therefore, in order to realize the adjustment of the beam diameter d, in this embodiment, a pulse voltage signal is applied to the screen based on the conventional dual-gate ion optical system, and as shown in fig. 8, the level state, the high level voltage, and the duty ratio of the pulse voltage signal are adjusted by the pulse modulator to change the screen voltage E, thereby achieving the purpose of changing the time for extracting the ion beam by the removal function and the beam diameter. The specific principle is as follows: when the guide rail moves to the grid point (x) to be processedi,yi) When ion beam current needs to be led out, the voltage of the screen grid is at high potential, and a positive electric field E is formed between the screen grid and the accelerating grid1，Ar+Ions can enter an electric field between the screen grid and the acceleration grid, and are accelerated by the electric field to form an ion beam current with certain removal capacity, as shown in fig. 9; when the guide rail is composed of (x)i,yi) Move to the next grid point (x)i+1,yi) In the process, no processing is needed, no ion beam current is needed to be led out in the process, the voltage of the screen grid is at a low potential, and a reverse electric field E is formed between the screen grid and the accelerating grid2，Ar+The ion beam current cannot enter the electric field to be accelerated to form the ion beam current, no ion beam current with the removal capacity is led out, and no extra removal is generated on the optical element, as shown in fig. 10. Aiming at errors of different frequency bands corresponding to different grid areas, after the errors are matched with the removal function, the removal function of different beam diameters is obtained by changing the voltage of the screen grid, referring to fig. 7, when the voltage of the screen grid is 700V, the beam diameter of the extracted ion beam is larger, the removal function only has the shape correction capability on the low-frequency band errors, along with the continuous increase of the voltage of the screen grid, the diameter of the extracted ion beam is smaller and smaller, and when the voltage of the screen grid reaches 1100V, the extracted ion beam already has the shape correction capability on the high-frequency band errors. In the position where error removal is needed (the residence time of the corresponding grid point is not zero), the output pulse is adjusted to be high potential (the high potential is for the pulse, namely corresponding to the screen grid voltage of the ion beam needing to extract the corresponding beam diameter), the error removal amount is large, the duty ratio of the pulse output is correspondingly increased (the pulse duty ratio corresponds to the proportion of the high potential on the screen grid in one pulse period, if the residence time is not zero), and the pulse output is correspondingly increased0.2s, the machine tool moving speed is 150mm/min, which is equivalent to the time of ion beam machining when the machine tool passes through the area is 0.2s, and the time of machine tool passing through the area is 0.4s, the corresponding pulse duty ratio is adjusted to 50%, the machine tool passes through the grid area, the time of ion beam machining is 0.2s, and the residence time is consistent); in the region where error removal is not needed, the pulse output is at a low potential, and accordingly no ion beam current is led out, and no additional sputtering removal is performed on the corresponding region.
In this embodiment, the step 1) of extracting the removal function model of the optical processing system further includes determining a mapping relationship (see fig. 2) between an amplitude of a screen gate voltage E of the dual-gate ion optical processing system and a beam diameter d of a removal function R (x, y), where the screen gate voltage E is a pulse voltage signal; step 4) solving the grid (x)i,yi) Dwell time t (x)i,yi) The method also includes determining a residence time t (x)i,yi) Corresponding duty cycle Di(ii) a For arbitrary grid (x) in step 5)i,yi) Based on target beam diameter diAnd a residence time t (x)i,yi) The step of modifying comprises:
5.1) judging the grid (x)i,yi) If the shape is not required to be modified, controlling the screen grid voltage E of the double-grid ion optical processing system to be low level, so that the ion source of the double-grid ion optical processing system does not lead out ion beam current at the position, moving to the next grid according to the specified movement speed, ending and exiting; if the shape is required to be modified, skipping to execute the next step;
5.2) controlling the screen grid voltage E of the double-grid ion optical processing system to be the duty ratio DiHigh level of (d), amplitude of screen grid voltage E, target beam diameter diThe mapping relation between the amplitude of the screen grid voltage E and the beam diameter d of the removal function R (x, y) is satisfied, so that the ion source of the dual-grid ion optical processing system leads out a pair grid (x, y) at the positioni,yi) And the ion beam with the shape modification capability moves to the next grid according to the specified movement speed after the machining is finished.
In step 5), each grid (x) of the processed element is sequentially alignedi,yi) The scanning order for modifying the shape can be manually specified according to the need, for example, in this embodiment, a progressive scanning mode is adopted. For example, in completing the grid (x)i,yi) After the modification, move to the next grid (x)i+1,yi) If grid (x)i+1,yi) If the ion source does not need to be processed, the ion beam current is not led out from the position of the ion source, and the guide rail moves to the next grid point (x) according to the normal movement speedi+2,yi) (ii) a If grid (x)i+1,yi) When processing is needed, the ion source draws ion beam current at the position, and then the guide rail moves to the next grid point (x) according to the normal movement speedi+2,yi) After scanning of one row is completed, the next row is entered, and the analogy is performed until all the grids are completely modified, and finally the surface shape error of the processed element is as shown in fig. 11, as can be seen from comparison with fig. 3, by the ion beam processing method for controlling the adjustable beam diameter based on the pulse of the surface shape error frequency band in the embodiment, the error of each frequency band of the processed element is effectively removed, and compared with the conventional processing efficiency, the ion beam processing method for controlling the adjustable beam diameter based on the pulse of the surface shape error frequency band in the embodiment is greatly improved, and the feasibility of the ion beam processing method for controlling the adjustable beam diameter based on the pulse of the surface shape error frequency band in the embodiment is verified.
In summary, in the ion beam processing method based on the pulse control adjustable beam diameter of the surface shape error frequency band, the pulse modulator adjusts the level state, the high level voltage and the duty ratio of the pulse voltage signal to change the screen grid voltage E, so that the purpose of changing the time of removing the function to extract the ion beam and the beam diameter is achieved, the time of replacing the grid meshes with different apertures to obtain different processing beam diameters is greatly saved, and the shape modification efficiency is greatly improved. Ion beam machining is usually performed in a raster scanning manner, with a maximum acceleration of the machine tool of 1m/s2The maximum operation speed is 3000mm/min, when the surface shape error gradient between two grids is large (medium-high frequency error), the speed gradient of the machine tool operation is large, the acceleration of the machine tool can not meet the requirement, and the ion beam processing does not have the shape correction capability on the corresponding error surface shapeForce. For example, the velocities between grids 1 and 2 are 150mm/min and 2800mm/min, respectively, and the corresponding acceleration solution requires 1.0858m/s2And the reaction time is 0.0407s, obviously, the dynamic performance of the machine tool cannot be met, the problem can be effectively solved by introducing the pulse type ion source, the machine tool runs at a constant speed of 150mm/min, the duty ratio and the frequency of pulses are adjusted to be 25Hz at the grid 2, the surface shape error can be removed, and the dependence degree of the repairing precision on the dynamic performance of the machine tool is greatly reduced. The removal function itself has a certain error, and continuous resident processing introduces processing residual. The pulse ion source can ensure that ion beams are not led out or the led-out beams do not have processing capacity by adjusting the pulse voltage duty ratio (the pulse duty ratio is 0) at the position where the element does not need to be processed, thereby avoiding the processing residual error caused by the error of the function and avoiding the waste of materials. The pulse control beam diameter adjustable ion beam processing method based on the surface shape error frequency band shortens processing preparation time, greatly improves ion beam processing efficiency, avoids processing residual errors caused by residence time errors, achieves the purpose of high-precision trimming and adjusting, and meanwhile reduces the requirements for dynamic characteristics of a machine tool. The method is beneficial to improving the processing precision, reducing the number of modification iterations, reducing the production cost and shortening the processing period. The method has the advantages of high precision and efficiency, strong operability, economical practicability, simple process flow and the like.
In addition, the present embodiment further provides an optical processing system, which includes a dual-gate ion optical processing system, a pulse modulator, and a control unit, wherein a control signal output end of the control unit is connected to a pulse voltage control end of a screen of the dual-gate ion optical processing system through the pulse modulator, and the control unit is programmed or configured to execute the steps of the above-mentioned pulse control beam diameter adjustable ion beam processing method based on the surface shape error frequency band.
In addition, the present embodiment further provides an ion beam processing apparatus for controlling an adjustable beam diameter based on a pulse of a surface shape error band, which includes a microprocessor and a memory connected to each other, wherein the microprocessor is programmed or configured to execute the steps of the ion beam processing method for controlling an adjustable beam diameter based on a pulse of a surface shape error band, or the memory stores a computer program programmed or configured to execute the ion beam processing method for controlling an adjustable beam diameter based on a pulse of a surface shape error band.
In addition, the present embodiment provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program programmed or configured to execute the above-mentioned method for processing an ion beam with a beam diameter adjustable based on the surface shape error band pulse control.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-readable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein. The present application is directed to methods, apparatus (systems), and computer program products according to embodiments of the application wherein instructions, which execute via a flowchart and/or a processor of the computer program product, create means for implementing functions specified in the flowchart and/or block diagram block or blocks. These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks. These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (6)
1. A pulse control beam diameter adjustable ion beam processing method based on a surface shape error frequency band is characterized by comprising the following steps:
1) extracting a removal function model of the optical processing system to obtain removal functions R (x, y) under different beam diameters d;
2) extracting an initial surface shape error of the element to be processed, and determining a removal quantity function H (x, y) of the element to be processed;
3) carrying out error calculation on the initial surface shape error of the element to be processed to obtain error frequency band distribution, grading according to the error frequency band in the error frequency band distribution, and determining a target beam diameter d with shape correction capability aiming at each grade of error frequency band;
4) dividing the element to be processed into grids, and obtaining any ith grid (x) according to the removal function H (x, y)i,yi) Removal amount of H (x)i,yi) And determining the grid (x)i,yi) Corresponding target beam diameter di(ii) a According to the removal amount H (x)i,yi) Target beam diameter diThe removal function R (x, y) at the lower level is solved to the grid (x)i,yi) Dwell time t (x)i,yi)；
5) Sequentially aligning each grid (x) of the element to be machined by means of an optical machining systemi,yi) Based on target beam diameter diAnd a residence time t (x)i,yi) Carrying out shape modification;
6) judging whether the surface shape of the machined element meets the requirement, and if not, skipping to execute the step 2) to continue iterative machining; otherwise, ending and exiting;
the optical addThe method comprises the following steps that the system is a double-gate ion optical processing system, when a removal function model of the optical processing system is extracted in the step 1), the mapping relation between the amplitude of a screen gate voltage E of the double-gate ion optical processing system and the beam diameter d of a removal function R (x, y) is determined, and the screen gate voltage E is a pulse voltage signal; step 4) solving the grid (x)i,yi) Dwell time t (x)i,yi) The method also includes determining a residence time t (x)i,yi) Corresponding duty cycle Di(ii) a For arbitrary grid (x) in step 5)i,yi) Based on target beam diameter diAnd a residence time t (x)i,yi) The step of modifying comprises:
5.1) judging the grid (x)i,yi) If the shape is not required to be modified, controlling the screen grid voltage E of the double-grid ion optical processing system to be low level, so that the ion source of the double-grid ion optical processing system does not lead out ion beam current at the position, moving to the next grid according to the specified movement speed, ending and exiting; if the shape is required to be modified, skipping to execute the next step;
5.2) controlling the screen grid voltage E of the double-grid ion optical processing system to be the duty ratio DiHigh level of (d), amplitude of screen grid voltage E, target beam diameter diThe mapping relation between the amplitude of the screen grid voltage E and the beam diameter d of the removal function R (x, y) is satisfied, so that the ion source of the dual-grid ion optical processing system leads out a pair grid (x, y) at the positioni,yi) And the ion beam with the shape modification capability moves to the next grid according to the specified movement speed after the machining is finished.
2. The method as claimed in claim 1, wherein the multistage error bands obtained by classification include an error low band, an error middle band and an error high band when the classification is performed according to the error bands in the distribution of the error bands in step 3).
3. The method as claimed in claim 1, wherein the step 4) of dividing the machined element into grids is to divide the whole surface of the machined element into n square grids with a side length of a.
4. An optical processing system, comprising a dual-gate ion optical processing system, a pulse modulator and a control unit, wherein a control signal output end of the control unit is connected with a pulse voltage control end of a screen of the dual-gate ion optical processing system through the pulse modulator, and the control unit is programmed or configured to execute the steps of the surface shape error frequency band-based pulse control beam diameter adjustable ion beam processing method according to any one of claims 1 to 3.
5. An ion beam processing device based on a surface shape error frequency band pulse control adjustable beam diameter, which comprises a microprocessor and a memory which are connected with each other, and is characterized in that the microprocessor is programmed or configured to execute the steps of the ion beam processing method based on the surface shape error frequency band pulse control adjustable beam diameter of any one of claims 1 to 3, or the memory is stored with a computer program which is programmed or configured to execute the ion beam processing method based on the surface shape error frequency band pulse control adjustable beam diameter of any one of claims 1 to 3.
6. A computer-readable storage medium having stored thereon a computer program programmed or configured to perform the method of surface-shape-error-band-based pulsed-controlled adjustable beam diameter ion beam processing of any of claims 1-3.
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