CN109623560A - The method of determination ion beam polishing process parameter for six axis movement polishing system - Google Patents
The method of determination ion beam polishing process parameter for six axis movement polishing system Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/002—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using electric current
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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Abstract
The present invention relates to a kind of methods of determination ion beam polishing process parameter for six axis movement polishing system, the present invention is based on Sigmund sputtering theory, experiment is scanned to determine the value of proportionality coefficient and constant C using the faraday of limited times, to obtain the peak value removal rate R of removal functionmaxWith the full width at half maximum H of removal functionRThe expression formula of relevant parameter relative to faraday's sweep current density profile, therefore after adjusting technological parameter, after obtaining faraday's sweep current density profile by faraday's scanning experiment, removal function can be calculated using the parameter of the curve, the time for determining removal function is substantially reduced, is shortened to 5 minutes from 2 hours.This improves the efficiency that machining simulation test is carried out for different technological parameters, so as to more quickly determine optimal processing parameter.In addition, experiment is all performed etching without need for every kind of technological parameter, when determining removal function due to this kind of method so as to avoid the waste of exemplar, save the cost.
Description
Technical field
The present invention relates to Precision Manufacturing Technology field more particularly to a kind of pass through measurement for six axis movement polishing system
The method that current density determines ion beam polishing process parameter.
Background technique
Ion beam polishing is commonly used in the final processing of optical super-precision surface, is that a kind of removal precision reaches atomic level
Polishing technology, it is considered to be machining accuracy highest, the best optical element correction of the flank shape technology of correction of the flank shape effect.In the process, have
There are certain energy and the ion beam current of spatial distribution bombardment optical element surface, the physical sputtering effect occurred when using bombardment is gone
Eliminating optical element surfacing, achievees the purpose that amendment face shape error, and machining accuracy reaches nanoscale.Traditional processing method is difficult
To realize that certainty removes, for convergency factor between 1.1~1.3, method for polishing ion beam can reach 10.The material of ion beam polishing
Material cutting mechanisms determine that ion beam polishing has machining accuracy high, and certainty is good, and noncontact procession and gaussian-shape remove letter
Several features, this makes ion beam polishing avoid tool wear, edge effect and duplicating when compared with conventional polishing techniques
The problems such as effect.
During ion beam polishing, the shape of removal function can be changed by adjusting the technological parameter of ion source, realized
Control and then control polishing process to removal function require to reach required burnishing surface shape.The removal function of ion beam polishing
It is distributed in gaussian-shape, is optimal removal function in deterministic theory technique.The acquisition of traditional removal function passes through experiment
It completes, i.e., sets the technological parameter of ion source first, then experiment is performed etching to exemplar, use interferometer measurement etching front and back
Face shape simultaneously calculates, to obtain removal function data, finally carries out Gauss curve fitting to removal function data.Such method operation
Complexity, period are long and at high cost, and repeatedly measurement is needed just to can determine that optimal ion source technological parameter.
In addition, traditional polishing system, there are three kinematic axis for majority tool: X-axis, Y-axis and Z axis.In traditional polishing system,
Its ion source is moved with X-axis, Y-axis and Z axis, can not be suitable for the polishing treatment of the optical articles of complex surface.
And six axis movement polishing system has X, Y, Z and A, B, C since ion source can be made to be transported relative to product along polyaxial
It is dynamic, it can be achieved that linear motion control, acceleration and angular speed motion control, can the surface to the different location of product carried out
Whole, comprehensive polishing, applied widely, polishing effect is more preferable.
When being determined in the prior art using the carry out parameter of Faraday cup, the parameter of data used is ion beam current point
Cloth, if be scanned using when this kind of parameter using the different Faraday cup of pinhole diameter, for same technological parameter from
The numerical value that beamlet stream obtains is different.If rescaned using different Faraday cup needs, respective value is obtained, more
It is time-consuming.In conclusion need a kind of save the cost, improve efficiency, parameter is accurate, reliable and stable for six axis movement polishing system
The method of the determination ion beam polishing process parameter of system.
Summary of the invention
The technical problem to be solved by the present invention is to the statuses for the prior art to provide a kind of save the cost, improve efficiency
For six axis movement polishing system determination ion beam polishing process parameter method.
The technical scheme of the invention to solve the technical problem is: a kind of move polishing system really for six axis
Determine the method for ion beam polishing removal function, comprising the following steps:
(1) removal function is determined:
A, the technological parameter of different ion sources is successively set, the ion that ion energy is identical but spatial distribution is different is obtained
Beam controls ion beam vertical incidence Faraday cup, and ion beam is scanned using rectilinear scan pattern, and in a scanning direction
Using equidistant acquisition data, Gauss curve fitting is carried out to acquired data, so that it may obtain ion beam current in the method that this side up
Sweep current density profile is drawn, it is close to obtain the scanning ion beam current of the faraday under different technical parameters from the curve
The peak value J of degreemax, faraday's sweep current density full width at half maximum HF；
B, ion source technological parameter same as step a, ion beam vertical incidence optical element surface, in light are successively used
Learn the enterprising line scan experiment of element；Optical component surface shape after being tested using interferometer measurement is obtained line and scans experimental data,
The metrical information of removal function is obtained after Gauss curve fitting, thus the peak value removal of the removal function under obtaining different technical parameters
Rate Rmax, removal function full width at half maximum HR；
C, when the energy of incident ion, ion beam incident angle and all identical etachable material when, not for spatial distribution
Same ion beam, removes the peak value removal rate R of functionmaxWith the peak value J of ion beam current densitymaxIt is directly proportional, such as the following Expression 1 institute
Show:
Rmax=aJmax
Therefore, by the peak value J of the resulting ion beam current density of step amaxWith the peak value of the resulting removal function of step b
Removal rate RmaxCarrying out linear fit can determine proportionality coefficient a, so as to acquire according to JmaxTo determine the R of removal functionmax
Expression formula；
D, the optical element material used is vitreous silica, and the C as shown in the following Expression 2 is relevant to material normal
Number,
In formula: HFIt is the full width at half maximum of faraday's sweep current density；JHRIt is equal to removal peak of function for material removing rate
The current density value of faraday's scanning at half, HRFor the full width at half maximum for removing function；
Therefore, the resulting J of step a is utilizedmaxAnd HFWith the resulting H of step bRIt can be in the hope of JHR, as shown in following formula 3,
To JmaxHFAnd JHRHRIt carries out linear fit and obtains the value of constant C, to acquire according to Jmax、HF、JHRCome true
Surely the full width at half maximum H of function is removedRExpression formula；
E, the ion beam applied to optical element processing is extracted by each aperture of Multi-hole focus ion-optic system
Made of ion beam convergence, beam intensity shows as rotationally symmetrical gaussian-shape, when ion beam vertical incidence optical element table
When face, obtained removal function can be indicated using the following Expression 4,
In formula: RmaxFor the peak value removal rate for removing function, σ is Gaussian Profile coefficient, HRRemove the full width at half maximum of function；
Therefore the R determined according to step cmaxExpression formula and step d determine HRExpression formula, measure that ion energy is identical but space
The faraday's sweep current density profile for being distributed different ion beams can determine corresponding removal function；
(2) optimal processing parameter is determined:
A ', the technological parameter for adjusting ion source obtain ion energy is identical but spatial distribution is different ion beam, control from
Beamlet vertical incidence Faraday cup, and ion beam is scanned using rectilinear scan pattern, and in a scanning direction using etc. between
Away from acquisition data, Gauss curve fitting is carried out to acquired data, so that it may obtain ion beam current in faraday's scanning that this side up
Current density is distributed (mA/cm2) curve, the peak value J that faraday scans ion beam current density is obtained from the curvemax, faraday
The full width at half maximum H of sweep current densityF, determine that the formula 1 in removal function in step c acquires R according to (1)maxValue；According to step d
In formula 3 determine material removing rate be equal to removal peak of function half at faraday scanning current density value JHRExpression
Formula, and bring the expression formula into formula 2 and can acquire HRValue, to determine removal function R (x, y) according to the formula 4 in step e；
B ', the material removal amount function E that element surface is calculated according to the measuring surface shape and expectation face shape of element to be processed
(x, y) calculates residence time function T (x, y) by the following Expression 5,
In formula: E (x, y) is the material removal amount function of element surface, and T (x, y) is ion beam in the resident of element surface
The function of time, R (x, y) are removal functions；
C ', using the technological parameter of step a ', utilize the residence time function T (x, y) of step b ' to carry out ion beam polishing
Machining simulation test, the RMS value of machining simulation test result and PV value are compared with necessary requirement, if being unsatisfactory for requiring weight
Multiple step a ', b ', c '；If meeting the requirements the optimal processing parameter for being determined as can apply to actual processing；
Specific one group of experimental result is that the proportionality coefficient a of the step c is 1.5962, the institute in the step d
State that optical element material is vitreous silica, the constant C is 1.9564；Gained process parameters range is ion beam voltage 800-
1200V, radio-frequency power 60-80W, gas flow 4-10sccm, operating distance 15-35mm.
Preferred faraday scans experiment method, and linear scanning described in the step a is in scanning direction setting institute
Stating ion source motion range is [- 15mm, 15mm], and 31 equidistant sampled points are taken in this section, is then carried out to sampled data
Gauss curve fitting obtains the faraday sweep current density profile of the ion beam current on this scanning direction.
Compared with the prior art, the advantages of the present invention are as follows: the present invention based on Sigmund sputtering theory, using having
The faraday of limit time scans experiment to determine the value of proportionality coefficient a and constant C, to obtain but space identical for ion energy
It is distributed the peak value removal rate R of the removal function of different ion beamsmaxWith the full width at half maximum H of removal functionRIt is swept relative to faraday
It retouches the expression formula of the relevant parameter of current density distribution curve, therefore adjusts technological parameter and obtain that ion energy is identical but space point
After the different ion beam of cloth, after obtaining faraday's sweep current density profile by faraday's scanning experiment, the song is utilized
Removal function can be calculated in the parameter of line, and the removal function that this kind of method is calculated is relative to using conventional method
It measures that resulting removal function basic result is identical, and substantially reduces the time for determining removal function, shortened to from 2 hours
5 minutes.This improves different technological parameters is directed to, machining simulation test is carried out to obtain residence time function T (x, y)
Efficiency, so as to more quickly determine optimal processing parameter.In addition, not needed when determining removal function due to this kind of method
Experiment is all performed etching for every kind of technological parameter, so as to avoid the waste for exemplar, has saved cost；And the present invention
It is suitable for the method for the determination technological parameter of six axis movement polishing system, the surface figure accuracy of element is preferable after resulting polishing.
The present invention is that ion beam current density is distributed (mA/cm by measuring ion beam current, parameter used in the data of acquisition2), it uses
The parameter, even if the pinhole diameter of the Faraday cup used is different, will not influence for the ion beam of same technological parameter
Current density, institute's value be it is identical, replaced and do not had to after Faraday cup re-measure data, improved efficiency and parameter is quasi-
Really, reliable and stable.
Detailed description of the invention
Fig. 1 is the flow chart of the determination optimised process of the embodiment of the present invention；
Fig. 2 is the peak value J of the ion beam current density of the embodiment of the present inventionmaxWith the peak value removal rate R of removal functionmax
Linear Fit Chart；
Fig. 3 is that faraday's sweep current that one of technological parameter group measures in the step 6 of the embodiment of the present invention is close
It spends distribution curve (calculateddata), by being obtained to measurement data (Measured data) fitting；
Fig. 4 is the surface face measured after the optical element warp scanning in the step 7 of the embodiment of the present invention is tested
Shape distribution；
Fig. 5 is the embodiment of the present invention to JmaxHFAnd JHRHRCarry out the curve of linear fit；
Fig. 6 is that the optimal processing parameter that the present embodiment determines carries out the resulting optics member of ion beam polishing machining simulation test
The schematic diagram of part surface face shape；
Fig. 7 is that the optimal processing parameter that the present embodiment determines carries out actual polishing experiments, resulting optical element surface
The schematic diagram of face shape.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.
A kind of determination ion beam polishing for six axis movement polishing system of the invention removes the specific of the method for function
Operating process are as follows:
(1) removal function is determined:
1, six axis movement polishing system power supply, water cooling plant, work argon gas etc. are opened.
2, optical element is placed, optical element is being fixed on by base disk middle position using fixture or high temperature gummed tape.
3, it vacuumizes, guarantees the vacuum state of experiment.Xian Chou main vacuum chamber waits pressures in vacuum tank to reach 5.0 × 10-1When Pa
Secondary vacuum chamber vacuum is taken out again, until secondary pressure in vacuum tank reaches 2.5 × 10-1When Pa, optical element be transferred to main vacuum chamber into
Row experiment.
4, ion source is opened, adjusts the parameters such as the voltage and current of ion source, and after ion source tends towards stability half an hour
It can be tested.
5, any one numerical value in experimentation control ion energy between 800-1200V, changes deionization beam electricity
Other technological parameters except pressure and averager electric current (in experimentation averager close), can obtain ion energy it is identical but
The different ion beam current of spatial distribution makes ion beam vertical incidence optical element surface, removes the peak value removal rate R of functionmaxWith
The peak value J of ion beam current densitymaxIt is directly proportional.The technological parameter of the different ion source of at least two groups is successively set in experiment.
6, ion beam vertical incidence Faraday cup is controlled, it is real to carry out faraday's scanning using the method for equidistant acquisition data
It tests: setting ion source motion range as [- 15mm, 15mm] in scanning direction, 31 equidistant sampled points are taken in this section, then
Gauss curve fitting is carried out to sampled data, so that it may it is bent in faraday's sweep current Density Distribution that this side up to obtain ion beam current
Shown in the curve (Calculated data) of line, the curve such as the fitting in Fig. 3, by measurement data (Measured
Data) fitting obtains.The peak that corresponding faraday under each technological parameter scans ion beam current density can be obtained from the curve
Value Jmax, faraday's sweep current density full width at half maximum HF。
7, using the technological parameter of ion source same as step 6, ion beam vertical incidence optical element surface, in 50mm
The enterprising line scan experiment of vitreous silica optical element；Optical component surface shape after being tested using interferometer measurement obtains line scanning
Experimental data, wherein optical component surface shape after Gauss curve fitting as shown in figure 4, obtain the measurement letter of removal function after primary experiment
Breath.To obtain the peak value removal rate R of the removal function under each different technical parametersmax, removal function full width at half maximum HR。
8, when the energy of incident ion, ion beam incident angle and all identical etachable material when, not for spatial distribution
Same ion beam, removes the peak value removal rate R of functionmaxWith the peak value J of ion beam current densitymaxIt is directly proportional, such as the following Expression 1 institute
Show:
Rmax=aJmax
Therefore, by the peak value J of the resulting ion beam current density of step 6 under different technology conditionsmaxWith step 7 gained
Removal function peak value removal rate RmaxCarrying out linear fit can determine proportionality coefficient a, as shown in Fig. 2, each measured
The corresponding point of data indicates corresponding J under the conditions of one group of technological parametermax、RmaxMeasured value, according to linear fit curve
It is 1.5962 that proportionality coefficient a, which can be obtained, in Fiting line, so as to acquire according to JmaxTo determine the R of removal functionmaxTable
Up to formula Rmax=1.5962Jmax。
9, when optical element material used determines, the C as shown in the following Expression 2 is constant relevant to material,
In formula: HFIt is the full width at half maximum FWHM of faraday's sweep current density；JHRIt is equal to removal function for material removing rate
The current density value of faraday's scanning at peak value half, HRFor the full width at half maximum for removing function；
Therefore, the resulting H of step 6 is utilizedF、JmaxWith the resulting R of step 7max、HRJ can be calculated according to the following Expression 3HR,
To JmaxHFAnd JHRHRIt carries out linear fit and obtains the value of constant C, matched curve is as shown in figure 5, the present embodiment
Resulting constant C is 1.9564, to acquire according to Jmax、HF、JHRTo determine the full width at half maximum H of removal functionRExpression formula
10, the ion beam applied to optical element processing is extracted by each aperture of Multi-hole focus ion-optic system
Made of ion beam convergence, beam intensity shows as rotationally symmetrical gaussian-shape, when ion beam vertical incidence optical element table
When face, obtained removal function can be calculated using the following Expression 4,
In formula: RmaxFor the peak value removal rate for removing function, σ is Gaussian Profile coefficient, HRRemove the full width at half maximum of function；
Therefore the R determined according to step cmaxExpression formula and step d determine HRExpression formula, measure that ion energy is identical but space
The faraday's sweep current density profile for being distributed different ion beams can determine corresponding removal function.
(2) optimal processing parameter is determined
A ', the technological parameter for adjusting ion source obtain ion energy is identical but spatial distribution is different ion beam, control from
Beamlet vertical incidence Faraday cup, and ion beam is scanned using line scanning mode, and in a scanning direction using equidistant
Data are acquired, Gauss curve fitting is carried out to acquired data, so that it may obtain ion beam current in the faraday that this side up and scan electricity
Current density distribution curve obtains the peak value J that faraday scans ion beam current density from the curvemax, faraday's sweep current it is close
The full width at half maximum H of degreeF, determine that the formula 1 in removal function in step 8 acquires R according to (1)maxValue；It is counted according to the formula 3 in step 9
Calculate the current density value J for faraday's scanning that material removing rate is equal at removal peak of function halfHRExpression formula, and by the table
Formula 2 is brought into up to formula acquires HRValue, to determine removal function R (x, y) according to the formula 4 in step 10；
B ', the material removal amount function E that element surface is calculated according to the measuring surface shape and expectation face shape of element to be processed
(x, y) calculates residence time function T (x, y) by the following Expression 5,
In formula: E (x, y) is the material removal amount function of element surface, and T (x, y) is ion beam in the resident of element surface
The function of time, R (x, y) are removal functions；
C ', using the technological parameter of step a ', utilize the residence time function T (x, y) of step b ' to carry out ion beam polishing
Machining simulation test, the PV value of machining simulation test result is compared with RMS value with necessary requirement, if being unsatisfactory for requiring weight
Multiple step a ', b ', c '；If meeting the requirements the technological parameter for being determined as can apply to actual processing.The resulting work of the present embodiment
Skill parameter area is ion beam voltage 800-1200V, radio-frequency power 60-80W, gas flow 4-10sccm, operating distance 15-
35mm。
Determine that the flow chart of technological parameter is as shown in Figure 1.
The present invention carries out the test of ion beam polishing machining simulation, and resulting optical element surface face shape is as shown in fig. 6, gained
PV is 59.231nm, and gained RMS is 2.722nm.
Actual polishing experiments are carried out on six axis movement polishing system, resulting optical element surface face is shaped like Fig. 7 institute
Show, gained PV is 0.181 λ, and resulting rms (being the same parameter with RMS) is 0.022 λ (λ=632.8nm).
Technological parameter in identified process parameters range is for the resulting effect of actual polishing and above-mentioned work
The effect of skill parameter is similar.
Claims (3)
1. it is a kind of for six axis movement polishing system determination ion beam polishing process parameter method, it is characterised in that including with
Lower step:
(1) removal function is determined:
A, the technological parameter of the different ion source of at least two groups is successively set, acquisition ion energy is identical but spatial distribution is different
Ion beam controls ion beam vertical incidence Faraday cup, and ion beam is scanned using rectilinear scan pattern, and in scanning side
Upwards using equidistant acquisition data, to acquire data progress Gauss curve fitting, so that it may obtain ion beam current this side up
Faraday's sweep current density profile, from the curve can obtain the faraday under different technical parameters scan ion beam electricity
The peak value J of current densitymax, faraday's sweep current density full width at half maximum HF；
B, the technological parameter of ion source same as step a, ion beam vertical incidence optical element surface, in optics are successively used
The enterprising line scan experiment of element；Optical component surface shape after being tested using interferometer measurement is obtained line and scans experimental data, warp
The metrical information of removal function is obtained after Gauss curve fitting, thus the peak value removal rate of the removal function under obtaining different technical parameters
Rmax, removal function full width at half maximum HR；
C, when the energy of incident ion, ion beam incident angle and all identical etachable material when, it is different for spatial distribution
Ion beam removes the peak value removal rate R of functionmaxWith the peak value J of ion beam current densitymaxIt is directly proportional, as shown in the following Expression 1:
Rmax=aJmax
Therefore, by the peak value J of the resulting ion beam current density of step amaxIt is removed with the peak value of the resulting removal function of step b
Rate RmaxCarrying out linear fit can determine proportionality coefficient a, so as to acquire according to JmaxTo determine the R of removal functionmaxTable
Up to formula；
D, when the optical element material used is vitreous silica, the C as shown in the following Expression 2 is constant relevant to material,
In formula: HFIt is the full width at half maximum FWHM of faraday's sweep current density；JHRIt is equal to removal peak of function for material removing rate
The current density value of faraday's scanning at half, HRFor the full width at half maximum for removing function；
Therefore, the resulting H of step a is utilizedF、JmaxWith the resulting R of step bmax、HRJ can be acquired according to the following Expression 3HR,
To JmaxHFAnd JHRHRIt carries out linear fit and obtains the value of constant C, to acquire according to Jmax、HF、JHRTo determine removal function
Full width at half maximum HRExpression formula；
E, the ion beam applied to optical element processing is the ion extracted by each aperture of Multi-hole focus ion-optic system
Made of beam convergence, beam intensity shows as rotationally symmetrical gaussian-shape, when ion beam vertical incidence optical element surface,
Obtained removal function can be indicated using the following Expression 4,
In formula: RmaxFor the peak value removal rate for removing function, σ is Gaussian Profile coefficient, HRRemove the full width at half maximum of function；Therefore root
The R determined according to step cmaxExpression formula and step d determine HRExpression formula, measure that ion energy is identical but spatial distribution not
Faraday's sweep current density profile of same ion beam can determine corresponding removal function；
(2) optimal processing parameter is determined:
A ', the technological parameter for adjusting ion source obtain the ion beam that ion energy is identical but spatial distribution is different, control ion beam
Vertical incidence Faraday cup, and ion beam is scanned using rectilinear scan pattern, and uses equidistantly adopt in a scanning direction
Collect data, Gauss curve fitting is carried out to acquired data, so that it may obtain ion beam current in faraday's sweep current that this side up
Density profile obtains the peak value J that faraday scans ion beam current density from the curvemax, faraday's sweep current density
Full width at half maximum HF, determine that the expression formula in removal function in step c acquires R according to (1)maxValue；It is true according to the formula 3 in step d
Determine the current density value J for faraday's scanning that material removing rate is equal at removal peak of function halfHRExpression formula, and by the table
H can be acquired by bringing formula 2 into up to formulaRValue, to determine removal function R (x, y) according to the formula 4 in step e；
B ', calculated according to the measuring surface shape of element to be processed and expectation face shape element surface material removal amount function E (x,
Y), residence time function T (x, y) is calculated by the following Expression 5,
In formula: E (x, y) is the material removal amount function of element surface, and T (x, y) is residence time of the ion beam in element surface
Function, R (x, y) are removal functions；
C ', using the technological parameter of step a ', utilize the residence time function T (x, y) of step b ' to carry out ion beam polishing emulation
The PV value of machining simulation test result is compared by processing experiment with RMS value with necessary requirement, if being unsatisfactory for requiring to repeat to walk
Rapid a ', b ', c '；If meeting the requirements the technological parameter for being determined as can apply to actual processing.
2. the method for the determination ion beam polishing process parameter according to claim 1 for being used for six axis movement polishing system,
It is characterized by: the proportionality coefficient a of the step c is 1.5962, the optical element material in the step d is molten
Fused silica, the constant C are 1.9564；Ion beam voltage 800-1200V, radio-frequency power 60-80W, gas flow 4-10sccm,
Operating distance 15-35mm.
3. the method for the determination ion beam polishing process parameter according to claim 1 for being used for six axis movement polishing system,
It is characterized by: linear scanning described in the step a be scanning direction set the ion source motion range as [- 15mm,
15mm], 31 equidistant sampled points are taken in this section, and Gauss curve fitting then is carried out to sampled data, obtains ion beam current herein
Faraday's sweep current density profile on scanning direction.
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| CN114088036B (en) * | 2021-11-12 | 2024-04-12 | 长沙埃福思科技有限公司 | Ion beam polishing machine for positioning workpiece coordinates and method for positioning workpiece coordinates |
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