CN109623560B - Method for determining ion beam polishing process parameters for six-axis motion polishing system - Google Patents
Method for determining ion beam polishing process parameters for six-axis motion polishing system Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B13/00—Machines or devices designed for grinding or polishing optical surfaces on lenses or surfaces of similar shape on other work; Accessories therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
- B24B1/002—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using electric current
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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Abstract
The invention relates to a method for determining ion beam polishing process parameters for a six-axis motion polishing system, which is based on the Sigmund sputtering theory and utilizes finite Faraday scanning experiments to determine the values of a proportionality coefficient and a constant C so as to obtain the peak value removal rate R of a removal functionmaxAnd removing the full width at half maximum H of the functionRCompared with an expression of relevant parameters of the Faraday scanning current density distribution curve, the method has the advantages that after the process parameters are adjusted, the Faraday scanning current density distribution curve is obtained through a Faraday scanning experiment, the removing function can be obtained through calculation by using the parameters of the curve, the time for determining the removing function is greatly shortened, and the time is shortened from 2 hours to 5 minutes. Therefore, the efficiency of carrying out simulation machining tests on different process parameters is improved, and the optimal process parameters can be determined more quickly. In addition, when the method determines the removal function, etching experiments do not need to be carried out on each process parameter, so that the waste of samples is avoided, and the cost is saved.
Description
Technical Field
The invention relates to the technical field of precision manufacturing, in particular to a method for determining ion beam polishing process parameters by measuring current density for a six-axis motion polishing system.
Background
Ion beam polishing is generally used for final processing of ultra-precise optical elements, is a polishing technology with removal accuracy reaching an atomic level, and is considered as an optical element modification technology with highest processing accuracy and best modification effect. In the process, ion beams with certain energy and space distribution bombard the surface of the optical element, the surface material of the optical element is removed by utilizing the physical sputtering effect generated during bombardment, the purpose of correcting surface shape errors is achieved, and the processing precision reaches the nanometer level. The traditional processing method is difficult to realize deterministic removal, the convergence rate is 1.1-1.3, and the ion beam polishing method can reach 10. The material removal mechanism of ion beam polishing determines that the ion beam polishing has the characteristics of high processing precision, good certainty, non-contact processing and a Gaussian removal function, so that the ion beam polishing avoids the problems of cutter abrasion, edge effect, copying effect and the like when compared with the traditional polishing technology.
In the ion beam polishing process, the shape of the removal function can be changed by adjusting the process parameters of the ion source, and the control of the removal function is realized so as to control the polishing process to achieve the required polishing surface shape requirement. The removal function of ion beam polishing is in Gaussian distribution and is the most ideal removal function in the deterministic polishing process. The traditional removal function is obtained through experiments, namely, the process parameters of the ion source are set firstly, then the etching experiment is carried out on a sample, the interferometer is used for measuring the surface shape before and after etching and calculating, so that removal function data are obtained, and finally the removal function data are subjected to Gaussian fitting. Such methods are complex to operate, long-lasting, and costly, and require multiple measurements to determine the optimum ion source process parameters.
In addition, conventional polishing systems, most have three axes of motion: an X-axis, a Y-axis, and a Z-axis. In the conventional polishing system, the ion source moves along the X axis, the Y axis and the Z axis, and the conventional polishing system cannot be applied to the polishing treatment of optical products with complex surfaces. The six-axis motion polishing system is provided with X, Y, Z and A, B, C, because the ion source can move along multiple axial directions relative to the product, the linear motion control, the acceleration and the angular velocity motion control can be realized, the surfaces of different positions of the product can be completely and comprehensively polished, the application range is wide, and the polishing effect is better.
In the prior art, when the parameters of the Faraday cup are used for determining the parameters, the parameter of the used data is the current distribution of the ion beam, and when the parameters are adopted, if the Faraday cups with different pinhole diameters are used for scanning, the numerical values obtained for the ion beam current with the same process parameters are different. If a different faraday cup is used and a new scan is required, it is time consuming to obtain the corresponding value. In view of the foregoing, there is a need for a method for determining ion beam polishing process parameters for a six-axis motion polishing system that is cost effective, efficient, accurate in parameters, and reliable.
Disclosure of Invention
The invention aims to provide a method for determining ion beam polishing process parameters for a six-axis motion polishing system, which is cost-saving and efficiency-improving, aiming at the current situation of the prior art.
The technical scheme adopted by the invention for solving the technical problems is as follows: a method of determining an ion beam polish removal function for a six axis motion polishing system, comprising the steps of:
(1) determining a removal function:
a. setting technological parameters of different ion sources in sequence, obtaining ion beams with the same ion energy but different spatial distributions, controlling the ion beams to vertically enter a Faraday cup, scanning the ion beams in a linear scanning mode, acquiring data at equal intervals in a scanning direction, and performing Gaussian fitting on the acquired data to obtain a Faraday scanning current density distribution curve of ion beam current in the direction, wherein the curve can obtain a peak value J of the Faraday scanning ion beam current density under different technological parametersmaxFull width at half maximum H of Faraday scanning current densityF；
b. B, sequentially adopting the same ion source process parameters as those in the step a, enabling ion beams to vertically enter the surface of the optical element, and performing a line scanning experiment on the optical element; measuring the surface shape of the optical element after the experiment by using an interferometer to obtain line scanning experimental data, and obtaining measurement information of the removal function after Gaussian fitting so as to obtain the peak value removal rate R of the removal function under different process parametersmaxRemoving the full width at half maximum H of the functionR；
c. When the energy of the incident ions, the incident angle of the ion beam and the etching material are all the same, the peak removal rate R of the removal function is the same for ion beams with different spatial distributionsmaxAnd peak value J of ion beam current densitymaxProportional ratio, as shown in the following formula 1:
Rmax＝aJmax
therefore, the peak value J of the ion beam current density obtained in the step a is measuredmaxThe peak value removing rate R of the removing function obtained in the step bmaxThe linear fitting can determine the proportionality coefficient a, so that the equation J can be obtainedmaxTo determine R of the removal functionmaxThe expression of (1);
d. the optical element material used was fused silica, and C shown in the following formula 2 was a material-dependent constant,
in the formula: hFIs the full width at half maximum of the faraday scan current density; j. the design is a squareHRIs the current density value, H, of the Faraday scan at which the material removal rate is equal to half the peak value of the removal functionRTo remove the full width at half maximum of the function;
thus, using J obtained in step amaxAnd HFWith H obtained in step bRCan find JHRAs shown in the following formula 3,
thereby to JmaxHFAnd JHRHRLinear fitting is performed to obtain the value of constant C, thereby obtaining the value according to Jmax、HF、JHRTo determine the full width at half maximum H of the removal functionRThe expression of (1);
e. the ion beam applied to the optical element processing is formed by converging the ion beams extracted by each small hole of the porous focusing ion optical system, the beam intensity of the ion beam is represented as a rotationally symmetrical Gaussian shape, when the ion beam vertically enters the surface of the optical element, the obtained removal function can be represented by the following formula 4,
in the formula: rmaxTo remove the peak removal rate of the function, σ is the Gaussian distribution coefficient, HRRemoving the full width at half maximum of the function; thus R determined according to step cmaxAnd H determined in step dRThe corresponding removal function can be determined by measuring the Faraday scanning current density distribution curve of the ion beams with the same ion energy but different spatial distributions;
(2) determining the optimal process parameters:
a', adjusting the process parameters of the ion source to obtain ion beams with the same ion energy but different spatial distributions, controlling the ion beams to vertically enter the Faraday cup, scanning the ion beams in a linear scanning mode, acquiring data at equal intervals in the scanning direction, and performing Gaussian fitting on the acquired data to obtain the Faraday scanning current density distribution (mA/cm) of the ion beam in the direction2) A curve from which the peak value J of the Faraday-scanned ion beam current density is obtainedmaxFull width at half maximum H of Faraday scanning current densityFDetermining R from formula 1 in step c of (1) determining the removal functionmaxA value; determining from equation 3 in step d that the material removal rate is equal to the current density value J of the Faraday scan at half the peak of the removal functionHRAnd the expression is taken into formula 2 to obtain HRA value such that the removal function R (x, y) is determined according to equation 4 in step e;
b', calculating a material removal function E (x, y) of the element surface according to the measured surface shape and the expected surface shape of the element to be processed, calculating a residence time function T (x, y) by the following formula 5,
in the formula: e (x, y) is a function of the amount of material removed from the surface of the element, T (x, y) is a function of the residence time of the ion beam at the surface of the element, and R (x, y) is a removal function;
c ', adopting the process parameters of the step a', utilizing the residence time function T (x, y) of the step b 'to carry out an ion beam polishing simulation machining test, comparing the RMS value and the PV value of the simulation machining test result with the required requirements, and repeating the steps a', b 'and c' if the requirements are not met; if the requirements are met, the optimal process parameters which can be applied to actual processing are determined;
a specific set of experimental results show that the proportionality coefficient a in the step C is 1.5962, the optical element material in the step d is fused silica, and the constant C is 1.9564; the obtained process parameters range from 800-1200V of ion beam voltage, 60-80W of radio frequency power, 4-10sccm of gas flow and 15-35mm of working distance.
The preferable experiment mode of faraday scanning is that in the step a, the linear scanning is to set the motion range of the ion source to [ -15mm,15mm ] in the scanning direction, 31 equidistant sampling points are taken in the interval, and then gaussian fitting is performed on the sampling data to obtain the faraday scanning current density distribution curve of the ion beam current in the scanning direction.
Compared with the prior art, the invention has the advantages that: the method is based on the Sigmund sputtering theory, and utilizes finite Faraday scanning experiments to determine the values of the proportionality coefficient a and the constant C, so as to obtain the peak value removal rate R of the removal function of the ion beams with the same ion energy but different spatial distributionsmaxAnd removing the full width at half maximum H of the functionRRelative to the expression of relevant parameters of the Faraday scanning current density distribution curve, after the ion beam with the same ion energy but different spatial distribution is obtained by adjusting the process parameters, the Faraday scanning current density distribution curve is obtained through a Faraday scanning experiment, the parameters of the curve can be used for calculating to obtain the removal function, and the removal function calculated by the method is relative to the removal function measured by the traditional methodThe basic results are the same, and the time for determining the removal function is greatly shortened from 2 hours to 5 minutes. Therefore, the efficiency of obtaining the residence time function T (x, y) for simulation machining test aiming at different process parameters is improved, and the optimal process parameters can be determined more quickly. In addition, when the method determines the removal function, etching experiments do not need to be carried out on each process parameter, so that the waste of samples is avoided, and the cost is saved; the invention is suitable for the method for determining the technological parameters of the six-axis motion polishing system, and the surface shape precision of the obtained polished element is better. The parameter used by the acquired data is the current density distribution (mA/cm) of the ion beam by measuring the ion beam current2) For the ion beam with the same technological parameter, the parameters are adopted, even if the diameters of the pinholes of the used Faraday cups are different, the current density is not influenced, the obtained numerical values are the same, data do not need to be measured again after the Faraday cups are replaced, the efficiency is improved, and the parameters are accurate, stable and reliable.
Drawings
FIG. 1 is a flow chart of a process for determining optimality in an embodiment of the present invention;
FIG. 2 shows peak value J of ion beam current density according to an embodiment of the present inventionmaxPeak removal rate R of the removal functionmaxA linear fitting graph;
FIG. 3 is a graph of Faraday scan current density distribution (calculated data) Measured for one set of process parameters in step 6 of an embodiment of the invention, by fitting Measured data (Measured data);
FIG. 4 is a surface profile measured after a warp scan experiment of the optical element in step 7 of an embodiment of the present invention;
FIG. 5 is a pair J of the embodiments of the present inventionmaxHFAnd JHRHRA curve for linear fitting;
FIG. 6 is a schematic diagram of the surface shape of the optical element obtained by performing an ion beam polishing simulation machining test on the determined optimal process parameters;
fig. 7 is a schematic diagram of the surface profile of the optical element obtained by performing an actual polishing experiment according to the optimal process parameters determined in the present embodiment.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.
The specific operation process of the method for determining the ion beam polishing removal function for the six-axis motion polishing system comprises the following steps:
(1) determining a removal function:
1. and opening a power supply, a water cooling device, working argon and the like of the six-axis motion polishing system.
2. The optical element is placed and fixed in the middle of the base plate by a clamp or a high-temperature adhesive tape.
3. Vacuumizing is carried out to ensure the vacuum state of the experiment. The main vacuum chamber is pumped first, and the pressure of the vacuum chamber reaches 5.0 multiplied by 10-1When Pa, the auxiliary vacuum chamber is vacuumized again until the pressure of the auxiliary vacuum chamber reaches 2.5 multiplied by 10-1Pa, the optical element was transferred to a main vacuum chamber for the experiment.
4. And opening the ion source, adjusting parameters such as voltage and current of the ion source, and performing an experiment after the ion source tends to be stable for half an hour.
5. The ion energy is controlled to be any value between 800-1200V in the experimental process, other process parameters except the ion beam voltage and the neutralizer current (the neutralizer is closed in the experimental process) are changed, ion beams with the same ion energy but different spatial distribution can be obtained, the ion beams vertically enter the surface of the optical element, and the peak removal rate R of the removal functionmaxAnd peak value J of ion beam current densitymaxIs in direct proportion. The process parameters of at least two different sets of ion sources are set in sequence in the experiment.
6. Controlling ion beams to vertically enter a Faraday cup, and performing a Faraday scanning experiment by adopting a method for collecting data at equal intervals: setting the ion source motion range to [ -15mm,15mm ] in the scanning direction]31 equidistant sampling points are taken in the interval, and then Gaussian fitting is carried out on the sampling data, so that the Faraday scanning current density distribution curve of the ion beam current in the direction can be obtainedA line, which is shown as a fitted curve (fitted data) in fig. 3, obtained by fitting to the Measured data (Measured data). The peak value J of the current density of the Faraday scanning ion beam corresponding to each process parameter can be obtained from the curvemaxFull width at half maximum H of Faraday scanning current densityF。
7. Adopting the same process parameters of the ion source as the step 6, enabling the ion beam to vertically enter the surface of the optical element, and performing a line scanning experiment on the 50mm fused quartz optical element; and measuring the surface shape of the optical element after the experiment by using an interferometer to obtain line scanning experimental data, wherein the surface shape of the optical element after one experiment is shown in figure 4, and obtaining the measurement information of the removal function after Gaussian fitting. Thereby obtaining the peak value removing rate R of the removing function under each different process parametermaxRemoving the full width at half maximum H of the functionR。
8. When the energy of the incident ions, the incident angle of the ion beam and the etching material are all the same, the peak removal rate R of the removal function is the same for ion beams with different spatial distributionsmaxAnd peak value J of ion beam current densitymaxProportional ratio, as shown in the following formula 1:
Rmax＝aJmax
therefore, the peak value J of the ion beam current density obtained in the step 6 under different process conditions is determinedmaxPeak removal rate R of the removal function obtained in step 7maxThe linear fitting is performed to determine the proportionality coefficient a, as shown in FIG. 2, the point corresponding to each measured data represents the corresponding J under a set of process parametersmax、RmaxThe scaling factor a is 1.5962 according to the linear fitting curve fixing line, so that the value according to J can be obtainedmaxTo determine R of the removal functionmaxIs represented by the formula Rmax＝1.5962Jmax。
9. When the optical element material used is determined, C shown in the following formula 2 is a constant relating to the material,
in the formula: hFIs the full width at half maximum FWHM of the faraday scan current density; j. the design is a squareHRIs the current density value, H, of the Faraday scan at which the material removal rate is equal to half the peak value of the removal functionRTo remove the full width at half maximum of the function;
thus, the H obtained in step 6 is usedF、JmaxAnd R obtained in step 7max、HRJ can be calculated according to the following equation 3HR，
Thereby to JmaxHFAnd JHRHRThe value of constant C was obtained by linear fitting, the fitting curve is shown in FIG. 5, the constant C obtained in this example was 1.9564, and the equation J was obtainedmax、HF、JHRTo determine the full width at half maximum H of the removal functionRExpression (2)
10. The ion beam applied to the optical element processing is formed by converging the ion beams extracted by each small hole of the porous focusing ion optical system, the beam intensity of the ion beam is represented as a rotationally symmetrical Gaussian shape, when the ion beam vertically enters the surface of the optical element, the obtained removal function can be calculated by adopting the following formula 4,
in the formula: rmaxTo remove the peak removal rate of the function, σ is the Gaussian distribution coefficient, HRRemoving the full width at half maximum of the function; thus R determined according to step cmaxAnd H determined in step dRThe measured faraday scan current density distribution curve of ion beams with the same ion energy but different spatial distributions can determine the corresponding removal function.
(2) Determining optimal process parameters
a', adjusting the process parameters of the ion source to obtain ion beams with the same ion energy but different spatial distributions, controlling the ion beams to vertically enter the Faraday cup, scanning the ion beams in a line scanning mode, acquiring data at equal intervals in the scanning direction, performing Gaussian fitting on the acquired data to obtain a Faraday scanning current density distribution curve of the ion beam current in the direction, and obtaining the peak value J of the Faraday scanning ion beam current density from the curvemaxFull width at half maximum H of Faraday scanning current densityFDetermining R from equation 1 in step 8 in determining the removal function of (1)maxA value; calculating the current density value J of the Faraday scan with the material removal rate equal to half of the peak value of the removal function according to equation 3 in step 9HRAnd the expression is taken into formula 2 to obtain HRA value such that the removal function R (x, y) is determined according to equation 4 in step 10;
b', calculating a material removal function E (x, y) of the element surface according to the measured surface shape and the expected surface shape of the element to be processed, calculating a residence time function T (x, y) by the following formula 5,
in the formula: e (x, y) is a function of the amount of material removed from the surface of the element, T (x, y) is a function of the residence time of the ion beam at the surface of the element, and R (x, y) is a removal function;
c ', adopting the process parameters of the step a', utilizing the residence time function T (x, y) of the step b 'to carry out an ion beam polishing simulation machining test, comparing the PV value and the RMS value of the simulation machining test result with the required requirements, and repeating the steps a', b 'and c' if the requirements are not met; if the requirements are met, the parameters are determined to be process parameters applicable to actual processing. The process parameters obtained in this embodiment range from 800-.
A flow chart for determining process parameters is shown in fig. 1.
The surface shape of the optical element obtained by the ion beam polishing simulation processing test is shown in FIG. 6, the PV obtained is 59.231nm, and the RMS obtained is 2.722 nm.
The actual polishing experiments were performed on a six-axis motion polishing system, and the resulting optical element surface profiles were as shown in fig. 7, with a resulting PV of 0.181 λ and a resulting RMS (same parameter as RMS) of 0.022 λ (λ 632.8 nm).
The process parameters within the determined process parameter ranges are used for the actual polishing process to obtain effects similar to those of the above process parameters.
Claims (3)
1. A method of determining ion beam polishing process parameters for a six axis motion polishing system comprising the steps of:
(1) determining a removal function:
a. setting at least two groups of technological parameters of different ion sources in sequence to obtain ion beams with the same ion energy and different spatial distributions, controlling the ion beams to vertically enter a Faraday cup, scanning the ion beams in a linear scanning mode, collecting data at equal intervals in a scanning direction, and performing Gaussian fitting on the collected data to obtain a Faraday scanning current density distribution curve of ion beams in the direction, wherein the curve can be used for obtaining the peak value J of the Faraday scanning ion beam current density under different technological parametersmaxFull width at half maximum H of Faraday scanning current densityF；
b. B, sequentially adopting the same process parameters of the ion source as the step a, enabling the ion beam to vertically enter the surface of the optical element, and performing a line scanning experiment on the optical element; measuring the surface shape of the optical element after the experiment by using an interferometer to obtain line scanning experimental data, and obtaining measurement information of the removal function after Gaussian fitting so as to obtain the peak value removal rate R of the removal function under different process parametersmaxRemoving the full width at half maximum H of the functionR；
c. When the energy of the incident ions, the incident angle of the ion beam, and the etching material are all the same, ions having different spatial distributions are generatedPeak removal rate R of the beam, removal functionmaxAnd peak value J of ion beam current densitymaxProportional ratio, as shown in the following formula 1:
Rmax＝aJmax
therefore, the peak value J of the ion beam current density obtained in the step a is measuredmaxThe peak value removing rate R of the removing function obtained in the step bmaxThe linear fitting can determine the proportionality coefficient a, so that the equation J can be obtainedmaxTo determine R of the removal functionmaxThe expression of (1);
d. when the optical element material used is fused silica, C shown in the following formula 2 is a constant relating to the material,
in the formula: hFIs the full width at half maximum FWHM of the faraday scan current density; j. the design is a squareHRIs the current density value, H, of the Faraday scan at which the material removal rate is equal to half the peak value of the removal functionRTo remove the full width at half maximum of the function;
thus, the H obtained in step a is usedF、JmaxWith R obtained in step bmax、HRJ can be obtained from the following formula 3HR，
To JmaxHFAnd JHRHRLinear fitting is performed to obtain the value of constant C, thereby obtaining the value according to Jmax、HF、JHRTo determine the full width at half maximum H of the removal functionRThe expression of (1);
e. the ion beam applied to the optical element processing is formed by converging the ion beams extracted by each small hole of the porous focusing ion optical system, the beam intensity of the ion beam is represented as a rotationally symmetrical Gaussian shape, when the ion beam vertically enters the surface of the optical element, the obtained removal function can be represented by the following formula 4,
in the formula: rmaxTo remove the peak removal rate of the function, σ is the Gaussian distribution coefficient, HRRemoving the full width at half maximum of the function; thus R determined according to step cmaxAnd H determined in step dRThe corresponding removal function can be determined by measuring the Faraday scanning current density distribution curve of the ion beams with the same ion energy but different spatial distributions;
(2) determining the optimal process parameters:
a', adjusting the process parameters of the ion source to obtain ion beams with the same ion energy but different spatial distributions, controlling the ion beams to vertically enter the Faraday cup, scanning the ion beams in a linear scanning mode, acquiring data at equal intervals in the scanning direction, performing Gaussian fitting on the acquired data to obtain a Faraday scanning current density distribution curve of the ion beam current in the direction, and obtaining the peak value J of the Faraday scanning ion beam current density from the curvemaxFull width at half maximum H of Faraday scanning current densityFDetermining R from the expression in step c in (1) determining the removal functionmaxA value; determining from equation 3 in step d that the material removal rate is equal to the current density value J of the Faraday scan at half the peak of the removal functionHRAnd the expression is taken into formula 2 to obtain HRA value such that the removal function R (x, y) is determined according to equation 4 in step e;
b', calculating a material removal function E (x, y) of the element surface according to the measured surface shape and the expected surface shape of the element to be processed, calculating a residence time function T (x, y) by the following formula 5,
in the formula: e (x, y) is a function of the amount of material removed from the surface of the element, T (x, y) is a function of the residence time of the ion beam at the surface of the element, and R (x, y) is a removal function;
c ', adopting the process parameters of the step a', utilizing the residence time function T (x, y) of the step b 'to carry out an ion beam polishing simulation machining test, comparing the PV value and the RMS value of the simulation machining test result with the required requirements, and repeating the steps a', b 'and c' if the requirements are not met; if the requirements are met, the parameters are determined to be process parameters applicable to actual processing.
2. The method of determining ion beam polishing process parameters for a six axis motion polishing system of claim 1, wherein: the proportionality coefficient a of the step C is 1.5962, the optical element material of the step d is fused silica, and the constant C is 1.9564; the ion beam voltage is 800-.
3. The method of determining ion beam polishing process parameters for a six axis motion polishing system of claim 1, wherein: in the step a, the linear scanning is to set the motion range of the ion source to be [ -15mm,15mm ] in the scanning direction, 31 equidistant sampling points are taken in the interval, and then Gaussian fitting is performed on the sampling data to obtain the Faraday scanning current density distribution curve of the ion beam current in the scanning direction.
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