CN100527919C - 安装电子部件的方法 - Google Patents

安装电子部件的方法 Download PDF

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Publication number
CN100527919C
CN100527919C CNB2004100341290A CN200410034129A CN100527919C CN 100527919 C CN100527919 C CN 100527919C CN B2004100341290 A CNB2004100341290 A CN B2004100341290A CN 200410034129 A CN200410034129 A CN 200410034129A CN 100527919 C CN100527919 C CN 100527919C
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China
Prior art keywords
welding
weld
chip
projection
electronic unit
Prior art date
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Expired - Lifetime
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CNB2004100341290A
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English (en)
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CN1541052A (zh
Inventor
须贺唯知
伊藤寿浩
中泽秀人
赤川雅俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yorozu Yuchi
Toshiba Corp
Rohm Co Ltd
Shinko Electric Industries Co Ltd
NEC Corp
Sharp Corp
Sanyo Electric Co Ltd
Fujitsu Semiconductor Ltd
Renesas Electronics Corp
Lapis Semiconductor Co Ltd
Panasonic Holdings Corp
Original Assignee
Renesas Technology Corp
Toshiba Corp
Rohm Co Ltd
Shinko Electric Industries Co Ltd
NEC Corp
Oki Electric Industry Co Ltd
Sharp Corp
Sanyo Electric Co Ltd
Sony Corp
Fujitsu Semiconductor Ltd
Matsushita Electric Industrial Co Ltd
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Application filed by Renesas Technology Corp, Toshiba Corp, Rohm Co Ltd, Shinko Electric Industries Co Ltd, NEC Corp, Oki Electric Industry Co Ltd, Sharp Corp, Sanyo Electric Co Ltd, Sony Corp, Fujitsu Semiconductor Ltd, Matsushita Electric Industrial Co Ltd filed Critical Renesas Technology Corp
Publication of CN1541052A publication Critical patent/CN1541052A/zh
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    • A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
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Abstract

在板上安装电子部件的方法，其中电子部件和在其上安装所述电子部件的安装板被置于真空或惰性气氛中，并在常温下通过使所述电子部件和所述板的焊接部件相互接触把所述电子部件安装在所述板上，所述方法包括：利用焊料材料在所述电子部件和所述板的至少一个上形成焊接部件，并使所述电子部件和所述板的所述焊接部件相互接触，而不预处理焊接部分的焊接表面。

Description

安装电子部件的方法
技术领域
本发明涉及安装诸如半导体芯片或封装的电子部件的方法。
背景技术
通常，在线路板上安装诸如半导体芯片的电子部件的焊接方法大体上分为诸如焊料回流或树脂固化的使用热的方法和超声焊接方法。虽然焊接所用的凸起的类型不同，两种焊接方法都使用热和负载(下面称为‘常规焊接’)。考虑对芯片的影响，理想焊接方法所需的条件为常温、常压和无负载。然而，还没有实现这样的方法。
东京大学先进科学与技术研究中心的Tadatomo Suga教授已经提出了近乎理想的焊接方法：使用表面激活的常温焊接方法(下面称为‘常温焊接’)。根据这种焊接方法，焊接表面被激活并在负载下仅通过使其相互接触被焊接在一起。结果，在几乎无负载下使常温焊接成为可能。人们正在研究各种无机和有机物质作为适合常温焊接的材料。
然而，常温焊接需要预处理焊接表面以实现低负载下的焊接，所述预处理为：将焊接表面的粗糙度和高度的变化控制到小于预定水平，从而增加焊接表面之间的接触几率。在将半导体芯片焊接到线路板的常温焊接的应用中，通常通过CMP(化学机械抛光)或电抛光芯片上由Au、Cu等材料构成的凸起预处理焊接表面。与常规焊接的预处理相比，所述预处理不仅增加了芯片的负担，而且增加了步骤的数量。如果没有焊接表面的所述繁琐的预处理，而常温焊接仍然可行，则可以降低芯片的负担和步骤数。
即使通过预处理焊接表面抑制了凸起粗糙度和高度的变化，线路板表面端子的表面粗糙度和高度的变化仍然依赖于在其上焊接芯片的线路板的状况。因此，即使在预定负载下的凸起变形也不能吸收芯片的凸起焊接表面和线路板表面之间的缝隙的变化，并最终导致焊接失败。施加多余的高压来吸收所述变化将损坏芯片和线路板。在将封装安装到线路板的情况下，也会引起类似的问题。
在日本未审查专利申请2002-50861和2002-373913(JP2002-50861A和JP2002-373913A)中描述了通过常温焊接把半导体芯片和线路板焊接到一起的传统方法。JP2002-50861A公开了通过常温焊接把诸如半导体芯片的电子部件焊接到诸如线路板的形成电路部件的方法，常温焊接使用Au、Cu、Al、In或Sn作为电子部件和形成电路部件之间的连接材料。JP2002-373913A公开了一种技术，其中在电解液或还原液中，在常温下，把一个具有由铟层构成的焊接位置的电子部件和另一个在相应的焊接位置具有由诸如金或铜构成的连接端子的电子部件在所述焊接位置焊接在一起。
发明内容
本发明的一个目的是提供通过常温焊接把诸如半导体芯片或封装的电子部件安放在线路板或基底上的新方法，其中不需要通过CMP或电抛光繁琐地预处理电子部件和安装板的焊接表面，从而抑制电子部件和板的焊接表面上凸起的粗糙度和高度的变化。
根据本发明，提供了在板上安放半导体元件的方法，其中诸如半导体芯片或半导体封装的电子部件和在其上安装所述电子部件的安装板被置于真空或惰性气氛中，并在常温下通过使所述电子部件和所述板的焊接部件相互接触把所述电子部件安装在所述板上，所述方法包括：使用焊料材料在所述电子部件和所述板的至少一个上形成焊接部分，并使所述电子部件和所述板的所述焊接部件相互接触，无需预处理焊接部件的焊接表面。
可用于根据本发明的方法的焊料材料的例子为：焊料材料需要不大于100克的垂直负载，以使在平行于电子部件体方向的直径为130μm的球形凸起的高度变化为8μm。当焊料凸起被用作焊料部件时，焊料凸起可以通过电镀焊料材料的回流形成，或通过直接将焊料球放置到位而获得。
附图说明
通过参照附图阅读下述详细说明，本领域的普通技术人员将清楚理解并认识到本发明的上述和其它目的和优点，其中：
图1示出了以凸起硬度为变量，凸起高度随芯片上施加的负载的变化；
图2示出了以凸起形状为变量，凸起高度随芯片上施加的负载的变化；
图3示出了伪芯片上形成的球形凸起；
图4示出了伪芯片上施加的负载和凸起高度变化之间的关系；
图5示出了每个凸起的负载和凸起高度变化之间的关系；以及
图6A到6D示意性地示出了本发明的各种实施例。
具体实施方式
对于根据本发明安装电子部件的方法中使用的常温焊接，在真空气氛(或惰性气氛)中在常温下，使通过除去氧化膜激活的两种材料的焊接表面相互接触，从而焊接两种材料。常温焊接方法具有下面的优势：
(1)在焊接过程中，通常不需要加热焊接材料，或如果需要，可以加热到比焊接材料的熔点低很多的温度。
(2)可以直接将不同类型的材料焊接在一起。
(3)要被焊接的一部分或多个部分可以包括低耐热材料。
常温焊接包括下面四个重要因素：进行焊接的气氛(真空或惰性气氛)，焊接表面的激活，焊接表面的表面粗糙度，以及焊接部分的凸起或焊盘的高度变化。在这些因素中，本发明的发明人的注意力集中于焊接表面的表面粗糙度和焊接部分的高度变化，并在金焊接部件之间进行了常温焊接试验。在试验中，芯片被焊接到通过蒸发在整个表面上沉积有金的平板硅衬底，芯片上以300μm的间距13行乘以13列地排列了169个金凸起(每个凸起的直径为100μm，高度为15μm)。在晶片态，对芯片的金凸起进行CMP工艺，以得到粗糙度不大于10nm且每个芯片的凸起高度变化不大于1μm。在下列条件下焊接后，测量焊接的切变强度：每凸起207g的焊接负载，焊接30秒，Ar离子辐射10分钟用于激活焊接表面，以及5×10-5torr的真空。结果，获得了3.0到4.0kg的切变强度。然而，由于在焊接位置之间的焊接变化，不能确保所有凸起的稳定焊接。
在试验中，考虑到由于芯片和衬底之间不够平行，且芯片和衬底的焊接部分之间具有缝隙，一侧焊接导致焊接缺乏稳定。因此，又研究了新概念：凸起‘形变度’。形变度是在外力下材料的形变能力，并通常被限定为在张力、压力、扭曲或弯曲等的外力下材料的伸长、收缩或偏转等的值。
在通过常温焊接利用凸起将半导体芯片倒装芯片焊接到板的情况下，凸起形变度可以表示为在负载下凸起变形(高度变化)的量。在金凸起焊接的情况下，凸起形变度代表吸收焊接失败的起因的因子，所述起因例如表面粗糙度变化、板的焊接部件的高度变化、芯片凸起高度变化、以及由焊接设备不够平行引起芯片和板的焊接部分之间的一侧接触。在这些变化和一侧接触的程度较大的情况下，必须增加负载以焊接所有凸起。然而，并不希望增加负载，因为它将增加芯片、焊盘和板的端子上的机械压力。
对于具有相同形状的凸起，通过增加形变度可以在较小的负载下焊接。凸起形变度与凸起的形状和硬度有关，具体为：
(1)凸起焊接面积越小且凸起越高，凸起形变度越大。
(2)对于相同形状和材料的凸起，凸起的硬度越小，凸起形变度越大。
测量了两种类型的样品芯片的金凸起的形变度，所述样品芯片具有直径为100μm和高度为15μm的金凸起以及具有通过退火而改变的凸起硬度(凸起硬度为68.0Hv和39.5Hv)。这些样品芯片在相同的晶片上形成。图1示出了各凸起的高度随芯片上施加的负载的变化。
图2示出了对下面两种具有金凸起的芯片进行类似测试的结果，一种芯片的金凸起具有50×50μm的方形截面、15μm的高度和40.1Hv的硬度，另一种芯片的金凸起具有直径为100μm的圆形截面、15μm的高度和39.5Hv的硬度。
从图1和2中可以看出在负载下，凸起高度随凸起的硬度和几何形状发生变化，为了确保较大的变化，需要较小的硬度和较小的截面，在固定的硬度和截面下，需要较大的负载。
考虑到形变度，对这样的芯片进行了试验，芯片具有低硬度39.5Hv的金凸起(直径为100μm，高度为15μm)并被焊接到通过蒸发沉积有金的硅衬底。在下列条件下焊接后测量焊接的切变强度：每凸起207g或355g的焊接负载，焊接30秒，Ar离子辐射10分钟，以及5×10-5torr的真空。在每凸起207g的焊接负载下，获得了3.1到7.2kg的切变强度，然而在每凸起355g的焊接负载下，芯片破裂，因此无法测量。对于每凸起207g和355g的焊接负载，每芯片的凸起焊接率分别为83％和100％。相比较，高硬度(68Hv)金凸起的凸起焊接率为35％。
通过投射电子显微镜(TEM)分析低硬度金凸起的焊接界面，在包括加热过程的高温下没有发现常规金-金焊接的再结晶，且可以清楚辨认所述界面。在每凸起355g焊接负载的情况下，放大6,000,000倍可以看见金的晶格线(111)，然而没有发现空位或晶格畸变，并证实了晶格被紧密地焊接在一起。
以这种方式通过增加形变度这个新因子，证实了在常温下金-金结合的可能性。然而，如上所述，需要预处理(CMP等)凸起末端的焊接表面，此时，使用了常温焊接方法的优势。这样，进一步寻找进行没有预处理凸起末端的焊接表面的常温焊接的条件，并最终发现通过各种焊料材料可以满足这样的条件。
给出这样一个实例，把具有通过回流Sn-37Pb焊料的柱状凸起获得的球形凸起(在平行芯片表面方向直径为130μm)的芯片焊接到通过蒸发沉积有金的硅衬底，而没有预处理焊料凸起末端的焊接表面。焊接条件为：每凸起177.5g或355g的焊接负载，焊接60秒，Ar离子辐射10分钟，以及5×10-5torr的真空。
对于每凸起177.5g和355g的焊接负载，凸起与沉积金的硅衬底的焊接率为100％。对于每凸起177.5g的焊接负载，焊接凸起的切变强度为11.1到11.3kg，而对于每凸起355g的焊接负载，超出了测量设备的测量范围。发现了在切变强度测量期间焊料凸起中发生的各种失败，但没有发现焊接界面分离。通过TEM观察焊接界面发现，在界面附近存在似乎为锡金合金的层，然而在界面处焊接没有空位或晶格畸变并令人满意。
这表明在实际应用中，具有很低硬度的诸如焊料的材料可以展示出常温焊接的效应。
发明人进行的一系列试验表明，常温焊接所需的凸起的最小高度变化为2到3μm。通常，与半导体芯片倒装芯片焊接的树脂布线板的焊盘的焊接表面的高度变化为4到5μm。当布线板是硅衬底时，焊盘的焊接表面的高度变化更小。因此，只要能够在小负载下确保6到8μm的焊料凸起的高度变化，通常可以在常温下将半导体芯片焊接到所有类型的用于倒装芯片焊接的布线板，而无需预处理焊料凸起的焊接表面。发明人发现利用这样的焊料材料可以达到这些条件，它需要不大于100克的垂直负载以使在与芯片体平行的方向直径为130μm的球形凸起的高度变化为8μm。
如图3示意性地示出，制备了具有铝焊盘3的伪芯片1，以及在焊盘3上每芯片形成了169个球形凸起5(通过回流柱形焊料材料获得)。凸起的特征如下：
焊料成分：Sn-37Pb
硬度：平均9.1Hv(7.8到11.0Hv)
直径：130μm
高度：平均102μm(98到106μm)
上述凸起高度的值是这样获得的：使用Mitaka Kohki公司型号为NH-3的测量设备，以面朝下的方式测量安放在平板上凸起的伪芯片的凸起高度，然后从所得结果中减去芯片厚度。因此，如图3所示，凸起高度H包括焊盘3的2μm厚度。
为了研究凸起变形度，在超净室里，把凸起的伪芯片以面朝下的方式安装在平板上，并施加1Kg、5Kg、10Kg和20Kg的负载，从而确定凸起高度的变化，作为距离板表面高度的变化。假定把上述平均凸起高度102μm作为形变前的参考凸起高度，获得了表1所示的结果。把平均值(102μm)作为参考凸起高度，对于变形前高度大于参考高度的凸起，在低负载下的测量值为负数。
表1
凸起高度变化(μm)
 
负载 最小 最大 平均 3σ
1Kg -2.75 5.57 1.24 5.20
5Kg -1.95 6.62 2.44 6.12
10Kg 19.91 23.58 21.92 2.69
这些结果绘制在图4和图5中，图4示出了伪芯片上的负载和凸起高度变化之间的关系，图5示出了每凸起的负载和凸起高度变化之间的关系。图4和5示出了对Sn-37Pb焊料凸起的测量结果，同时示出了下面表2中所示的焊料材料的凸起高度的变化，所述凸起高度变化是基于这样的假设通过计算测量结果得到的：即假设相同几何形状的凸起的变化与凸起材料的硬度成比例(由于Sn-37Pb和Sn-95Pb的硬度非常接近，他们的曲线相互重叠)。图4和5也示出了通过最小二乘法得到的Sn-37Pb(最小硬度的焊料材料)和Sn-Zn-Bi(最大硬度的焊料材料)的近似曲线。
表2
焊料类型和硬度(Hv)
Figure C200410034129D00091
可以看出，当在图5的情况下施加需要确保6到8μm的凸起高度变化的上述条件，以在常温下把具有焊料凸起的半导体芯片焊接到板时，为了使平行芯片表面方向的直径为130μm的球形凸起产生8μm的垂直变化，负载可以不大于60到70g。这种结果表明在每凸起不大于60g或不大于70g的负载下，可以在常温下把芯片焊接到板，而无需预处理焊料凸起的焊接表面。实际上，常温焊接所需的每凸起负载也会受到板的凸起或焊盘表面状况的影响。因此，在本发明中，焊料材料被限定为使没有预处理焊料凸起的焊接表面的常温焊接可行的焊料材料，由所述焊料材料构成的在平行于芯片体方向的直径为130μm的球形凸起被垂直地施加不大于100g的负载时，可以产生8μm的垂直变化。
实际上，在这样的情况下，即与具有由表2列出的各类型的焊料构成的凸起的上述伪芯片类似的伪芯片，在常温下被焊接到具有镀金的铜焊盘的硅衬底，而没有预处理凸起的焊接表面，在10Kg(每凸起59g)的负载下，对所有的凸起可以获得满意的焊接结果。也可以确定，在相同的条件下，与上述那些伪芯片类似的伪芯片可以在常温下被焊接到非常不平整的PCB板上，而没有预处理凸起的焊接表面。相反，金凸起可以在每凸起355g的负载下被常温焊接到硅衬底上，但是，由于凸起高度的改变不足不能被常温焊接到PCB板上(图1)。此外，即使焊接到硅板上需要预处理凸起的焊接表面。
如在常温焊接领域，特别是半导体芯片的常温焊接领域所公知的，常温焊接的技术概念通常包括加热到低于焊接材料熔点的温度的焊接(例如，对于金凸起，公知为加热到大约200℃进行焊接，也被称为常温焊接)，以及包括不需要把焊接材料加热到高温的焊接。本发明的常温焊接也包括把焊接凸起加热到低于其熔点的温度的焊接。本发明的把凸起材料加热到低于其熔点的温度的焊接的优点在于：可以在诸如氮或氩的惰性气氛而不是真空气氛下焊接，并降低了焊接负载。发明人已经通过试验证实了具有焊料凸起的芯片可以在氮气气氛下被焊接到加热到100℃的板上，而没有预处理凸起的焊接表面。
现在将通过参考图6A到6D说明本发明的各种实施例。
在图6A示出的实施例中，具有焊料凸起13的半导体芯片11(或半导体封装)在常温下被焊接到具有焊盘17的布线板15，而没有预处理凸起13的焊接表面。
在图6B示出的实施例中，具有焊料凸起23的半导体芯片21(或半导体封装)在常温下被焊接到具有在焊盘27上形成的焊料凸起29的布线板25，而没有预处理凸起23和29的焊接表面。
在图6C示出的实施例中，具有焊料凸起33的半导体芯片31(或半导体封装)在常温下被焊接到具有在焊盘37上形成的焊料凸起39的布线板35，而没有预处理凸起33和39的焊接表面。
在图6D示出的实施例中，具有焊盘43的半导体芯片41(或半导体封装)在常温下被焊接到具有在焊盘47上形成的焊料凸起49的布线板45，而没有预处理凸起49的焊接表面。
从上述的说明中可以理解，根据本发明，利用具有足够变形度的焊料材料形成的焊接部件作为半导体芯片或封装等的电子部件和安装板中的至少一种的焊接部件，可以在常温下将电子部件安装到安装板上，而不预处理凸起部分的焊接表面。这样，避免了对电子部件不利的通过诸如CMP或电抛光的方法对凸起部分的焊接表面的预处理，从而降低了电子部件的负担和所需工艺的步骤数。此外，可把电子部件常温焊接到有机布线板上，而使用金凸起等的所述常温焊接至今来说很困难。

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1.一种在板上安装电子部件的方法，其中电子部件和在其上安装所述电子部件的安装板被置于真空或惰性气氛中，并在常温下通过使所述电子部件和所述安装板的焊接部件相互接触，把所述电子部件安装在所述安装板上，所述方法包括：利用焊料材料在所述电子部件和所述安装板的至少一个上形成所述焊接部件，并使所述电子部件和所述安装板的所述焊接部件相互接触，而不预处理焊接部分的焊接表面，其中所述焊料材料需要不大于100克的垂直负载以使在平行于电子部件体方向的直径为130μm的球形凸起的高度变化8μm。
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Free format text: FORMER OWNER: SHINKO ELECTRIC CO., LTD. OKI SEMICONDUCTOR CO., LTD. SANYO ELECTRIC CO., LTD. SHARP CORPORATION SONY CORPORATION TOSHIBA K.K. NEC CORP. RENESAS ELECTRONICS CORPORATION FUJITSU SEMICONDUCTOR CO., LTD. MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. ROHM CO., LTD.

Effective date: 20141128

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Address after: Tokyo, Japan

Patentee after: Yorozu Yuchi

Patentee after: Matsushita Electric Industrial Co.,Ltd.

Patentee after: Rohm Co.,Ltd.

Patentee after: SHINKO ELECTRIC INDUSTRIES Co.,Ltd.

Patentee after: LAPIS SEMICONDUCTOR Co.,Ltd.

Patentee after: Sanyo Electric Co.,Ltd.

Patentee after: Sharp Corp.

Patentee after: Toshiba Corp.

Patentee after: NEC Corp.

Patentee after: Renesas Electronics Corp.

Patentee after: FUJITSU MICROELECTRONICS Ltd.

Address before: Tokyo, Japan

Patentee before: Yorozu Yuchi

Patentee before: FUJITSU MICROELECTRONICS Ltd.

Patentee before: Matsushita Electric Industrial Co.,Ltd.

Patentee before: Rohm Co.,Ltd.

Patentee before: SHINKO ELECTRIC INDUSTRIES Co.,Ltd.

Patentee before: LAPIS SEMICONDUCTOR Co.,Ltd.

Patentee before: Sanyo Electric Co.,Ltd.

Patentee before: Sharp Corp.

Patentee before: Sony Corp.

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Patentee before: Renesas Electronics Corp.

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Granted publication date: 20090812