CN100526991C - Method for changing dimension of photo mask pattern - Google Patents

Method for changing dimension of photo mask pattern Download PDF

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Publication number
CN100526991C
CN100526991C CNB2006100714628A CN200610071462A CN100526991C CN 100526991 C CN100526991 C CN 100526991C CN B2006100714628 A CNB2006100714628 A CN B2006100714628A CN 200610071462 A CN200610071462 A CN 200610071462A CN 100526991 C CN100526991 C CN 100526991C
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length
pattern
width
contact hole
mask pattern
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CN101042538A (en
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侯家信
朱楚玉
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United Microelectronics Corp
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United Microelectronics Corp
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Abstract

This invention relates to one method to change light mask mode pattern size, which comprises the following steps: converting current coordinates and then the original pattern length and width; correcting the size difference according to the values.

Description

Change the method for dimension of photo mask pattern
Technical field
The present invention relates to a kind of method that changes dimension of photo mask pattern, relate in particular to a kind of method of change dimension of photo mask pattern of accurately transform size.
Background technology
Recently, semiconductor industry is the trend designs of dwindling circuit component all, and one of the most very important step is photoetching process (photoLithography) in whole semiconductor technology.The pattern of every relevant for example each layer film with semiconductor component structure all is to decide its critical size size of (criticaL dimension is called for short CD) by photoetching process, also is decided by the development of photoetching process technology.So optical mask pattern shifts the accuracy of (transfer), just accounted for important status, if the transfer of pattern is incorrect, then can influence the tolerance (toLerence) of the critical size on the chip, reduce the resolution of exposure.
In addition, be the dwindling of conjunction with semiconductors part size at present, tend to the optical mask pattern of original large-size is moderately amplified earlier, and after backguy again, narrow down to required size with optical mask pattern is whole again.But, the equipment or the software that now are used to adjust optical mask pattern all are directly the coordinate of pattern to be changed, and particularly these adjustment for coordinate all are to cast out fully after directly will calculating the radix point of the value of gained.Therefore, the pattern of same size originally takes place easily, discrepant on the contrary situation takes place after varying sized ratio.
Summary of the invention
The purpose of this invention is to provide a kind of method that changes the contact hole dimension of photo mask pattern, can guarantee the variation dimensionally of contact hole optical mask pattern, and then improve photograph window (photo WindoW).
A further object of the present invention provides a kind of method that changes dimension of photo mask pattern, to obtain correct size.
The present invention proposes a kind of method that changes the contact hole dimension of photo mask pattern, and comprising provides the first contact hole pattern, and the coordinate at four angles of its rectangular coordinate system is respectively (x 1, y 1), (x 2, y 1), (x 1, y 2) and (x 2, y 2), and the first contact hole pattern has first length L and first width W, and wherein first length L is y 2With y 1Difference, and first width W is x 2With x 1Difference.Then, adjust the size of the first contact hole pattern, wherein the change in size of the first contact hole pattern is made as A doubly, and therefore the step of adjusting comprises and carries out the coordinate conversion earlier: amplify this first contact hole pattern earlier, dwindle this first contact hole pattern again, make x 1, x 2, y 1, y 2Multiply by A respectively and carry out the value of an integer computing and obtain x 1', x 2', y 1', y 2', and the coordinate that acquires four angles by this is respectively (x 1', y 1'), (x 2', y 1'), (x 1', y 2') and (x 2', y 2') the second contact hole pattern, and the second contact hole pattern has second length L ' with second width W ', wherein second length L ' is y 2' and y 1' difference, and second width W ' is x 2' and x 1' difference.Afterwards, carry out the conversion of length and width: get the value that first length L and first width W multiply by A respectively and carry out an integer computing, and obtain the 3rd length L " and the 3rd width W ".At last, with the 3rd length L " and the 3rd width W " be as the criterion second length L of gained when being adjusted at the coordinate switch process ' and second width W '.
According to the method for the described change contact hole of the preferred embodiments of the present invention dimension of photo mask pattern, above-mentioned adjustment second length L ' mode comprise reduction or increase by second length L '.
According to the method for the described change contact hole of the preferred embodiments of the present invention dimension of photo mask pattern, the mode of above-mentioned adjustment second width W ' comprises reduction or increases by second width W '.
According to the method for the described change contact hole of the preferred embodiments of the present invention dimension of photo mask pattern, above-mentioned mode of carrying out the integer computing comprises and rounds up, unconditionally casts out or unconditional carry.
The present invention reintroduces a kind of method that changes dimension of photo mask pattern, and comprising provides a pattern, and this pattern is made up of several line segments.Then, adjust the size of above-mentioned pattern, and pattern variation dimensionally is made as A doubly, then its step is the size of each line segment of adjusting this pattern.The step of the size of each line segment comprises in the above-mentioned adjustment pattern: a) select a line segment in the line segment, the two-end-point of the line segment that this is selected is respectively (x at the coordinate of rectangular coordinate system 1, y 1) and (x 2, y 2) and have first length L = ( x 2 - x 1 ) 2 + ( y 2 - y 1 ) 2 B then) amplifies the coordinate of this selected line segment earlier, dwindle the coordinate of this selected line segment again, make the coordinate of above-mentioned selected line segment be converted to (x 1', y 1'), (x 2', y 2'), x wherein 1', x 2', y 1', y 2' be x 1, x 2, y 1, y 2The value that multiply by A respectively and carry out an integer computing, and first length L changes second length into L ′ = ( x 2 ′ - x 1 ′ ) 2 + ( y 2 ′ - y 1 ′ ) 2 Then, c) conversion first length becomes the 3rd length L ", the 3rd length L wherein " be the value that first length L multiply by A and carries out an integer computing, d again) according to the 3rd length L ", adjust second length L '; Afterwards, e) repeating step a～d is up to each line segment of having adjusted above-mentioned pattern.
According to the method for the described change dimension of photo mask pattern of the preferred embodiments of the present invention, above-mentioned adjustment second length L ' mode comprise reduction or increase by second length L '.
According to the method for the described change dimension of photo mask pattern of the preferred embodiments of the present invention, above-mentioned mode of carrying out the integer computing comprises and rounds up, unconditionally casts out or unconditional carry.
The present invention is because many steps of a channel correction, so after tradition utilizes the mode of coordinate conversion repeatedly to adjust the size of optical mask pattern, can be via directly the length and the width of optical mask pattern being changed, and accurately reach optical mask pattern variation dimensionally.Therefore, the pattern of same size originally can not take place in the present invention, becomes the pattern of different size after varying sized ratio.
For above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A and Figure 1B are the synoptic diagram according to the change contact hole dimension of photo mask pattern of embodiments of the invention;
Fig. 2 is the dimension of photo mask pattern variation synoptic diagram according to another embodiment of the present invention.
Embodiment
Figure 1A and Figure 1B are the synoptic diagram according to the change contact hole dimension of photo mask pattern of embodiments of the invention.
Please earlier with reference to Figure 1A, the coordinate of wherein leftmost original contact hole pattern is respectively (0,0), (260,0), (0,260) and (260,260); That is to say x 1=0, y 1=0, x 2=260 and y 2=260, and its first length L 1Be y 2With y 1Difference, first width W 1Be x 2With x 1Difference, both are 260.
Then, please continue, adjust the size of contact hole pattern, and the change in size of default contact hole pattern is 0.9 times that just the overall optical mask pattern will dwindle with reference to Figure 1A.In addition, because optical mask pattern dwindles " line " pattern width is dwindled, might after gold-tinted technology, can't expose to the sun out, that is " line " pattern can interrupt even lose, so the mode of operation that optical mask pattern will be dwindled is normally amplified master pattern earlier, be to amplify 1.06 times earlier as this figure.The coordinate conversion of this moment is to get x1, x 2, y 1, y 2The value that multiply by 1.06 (* 1.06) respectively and carry out an integer computing, and the integer computing in this embodiment is to be example unconditionally to cast out, so can obtain (0,0), (275,0), (0,275) and (275,275) four coordinates.In addition, so-called integer computing also can be selected to round up or mode such as unconditional carry among the present invention.
Then, please continue with reference to Figure 1A, the photomask pattern that amplifies backguy is again dwindled it again, be to dwindle 0.85 times (* 0.85) as this figure, reaches 0.9 times target with the change in size that reaches whole optical mask pattern.And resulting through coordinate conversion back be (0,0), (233,0), (0,233) and (233,233) four coordinates.The contact hole pattern of this moment has second length L 1' and second width W 1', second length L wherein 1' be y 2' and y 1' difference, and second width W 1' be x 2' and x 1' difference, both are 233.
Afterwards, referring again to Figure 1A, because must proofread and correct the pattern dimension gap that is caused because of the coordinate conversion, so will carry out the conversion of length and width.At first, get first length L 1With first width W 1Multiply by 0.9 and carry out the value that integer computing as above obtains respectively, so will obtain the 3rd length L 1" and the 3rd width W 1", both are 234.At last, just with the 3rd length L 1" and the 3rd width W 1" be as the criterion second length L of gained when being adjusted at the coordinate switch process 1' and second width W 1'.That is to say that contact hole optical mask pattern in the present embodiment needs the result according to the conversion of length and width again after coordinate conversion, increase length and width, and obtain the rightmost contact hole optical mask pattern of this figure.
What in addition, Figure 1B was shown is and living original contact hole optical mask pattern of Figure 1A (leftmost pattern) and identical change in size.But, because the coordinate of the contact hole optical mask pattern of Figure 1B and Figure 1A's is different, be respectively (7,7), (267,7), (7,267) and (267,267); That is to say x 1=7, y 1=7, x 2=267 and y 2=267, and its first length L 2With first width W 2Then be 260.Afterwards, the coordinate that obtains through amplifying optical mask pattern is (7,7), (283,7), (7,283) and (283,283).After backguy again, the change in size that the pattern that is exaggerated is narrowed down to whole optical mask pattern reaches 0.9 times then.And after coordinate conversion, obtain (5,5), (240,5), (5,240) and (240,240) four coordinates, second length L of this moment 2' and second width W 2' be 235.Though note that master pattern measure-alike of Ben Tu and Figure 1A, only be because the coordinate difference will produce different size after changing dimension of photo mask pattern.Therefore, need proofread and correct, make final contact hole optical mask pattern that the 3rd length L be arranged 2" and the 3rd width W 2", and the coordinate after obtaining proofreading and correct (6,6), (240,6), (6,240) and (240,240) four coordinates.
Except contact hole, the present invention also can be applicable to other polygonal optical mask patterns, and as shown in Figure 2, it is the dimension of photo mask pattern variation synoptic diagram according to another embodiment of the present invention.
Please refer to Fig. 2, suppose that optical mask pattern is made up of 6 line segments and slightly is the pattern of L type, its coordinate is respectively (0,0), (280,0), (280,140), (140,140), (140,280) and (0,280).Then, adjust the size of each line segment of this pattern that slightly is the L type, reaching the purpose of adjusting pattern dimension, and pattern variation dimensionally as above an embodiment be made as 0.9 times.
Next, please continue, adjust the size of each line segment of optical mask pattern with reference to Fig. 2; For instance, a) select earlier that coordinate be a line segment of (0,0) and (0,280) in 6 line segments; That is to say x 1=0, y 1=0, x 2=0 and y 2=280, and its first length L = ( x 2 - x 1 ) 2 + ( y 2 - y 1 ) 2 = 280 .
Then, please continue with reference to Fig. 2, b) coordinate of the above-mentioned selected line segment of conversion becomes (x 1', y 1'), (x 2', y 2').And for backguy again, so need to amplify earlier line segment, the value that original coordinate be multiply by 1.06 (* 1.06) respectively and carry out an integer computing becomes (0,0) and (0,296), and is to be example with the integer computing of unconditionally casting out in this embodiment.Certainly, also can according to needs select to round up or unconditional carry etc. as the mode of integer computing.Afterwards, by the time again after the backguy, dwindle line segment again, the value that the coordinate that amplified be multiply by 0.85 (* 0.85) respectively and carry out the same integer computing becomes (0,0) and (0,251), wherein x 1'=0, y 1'=0, x 2'=0 and y 2'=251.At this moment, first length L can become second length L ′ = ( x 2 ′ - x 1 ′ ) 2 + ( y 2 ′ - y 1 ′ ) 2 = 251 .
Then, please continue with reference to Fig. 2, c) conversion first length becomes the 3rd length L ", the 3rd length L wherein "=L * 0.9 and the value of carrying out integer computing as above, so L " should be 252.Therefore, need d) according to the 3rd length L ", adjust second length L ', also being about to length increases.Afterwards, as long as e) repeat above-mentioned steps a～d, up to each line segment of having adjusted the pattern that slightly is the L type.
In sum, the present invention utilizes and directly the length and the width of optical mask pattern is changed after tradition utilizes the mode of coordinate conversion repeatedly to adjust the size of optical mask pattern, and reaches the purpose of correction optical mask pattern.Simultaneously, because optical mask pattern can accurately varying dimensions, so be unlikely to have the pattern of same size, discrepant on the contrary situation takes place after varying sized ratio.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any those skilled in the art; under the premise without departing from the spirit and scope of the present invention; can do a little change and retouching, so protection scope of the present invention is as the criterion when looking the claims person of defining.

Claims (7)

1. method that changes the contact hole dimension of photo mask pattern comprises:
One first contact hole pattern is provided, and the coordinate at four angles of its rectangular coordinate system is respectively (x 1, y 1), (x 2, y 1), (x 1, y 2) and (x 2, y 2), and this first contact hole pattern has one first length L and one first width W, and wherein this first length L is y 2With y 1Difference, and this first width W is x 2With x 1Difference; And
Adjust the size of this first contact hole pattern, wherein the change in size of this first contact hole pattern is made as A doubly, and then its step comprises:
Coordinate conversion: amplify this first contact hole pattern earlier, dwindle this first contact hole pattern again, make x 1, x 2, y 1, y 2Multiply by A respectively and carry out the value of an integer computing and obtain x 1', x 2', y 1', y 2', and the coordinate that acquires four angles by this is respectively (x 1', y 1'), (x 2', y 1'), (x 1', y 2') and (x 2', y 2') one second contact hole pattern, it has one second length L ' and one second width W ', wherein this second length L ' be y 2' and y 1' difference, and this second width W ' is x 2' and x 1' difference;
The conversion of length and width: get the value that this first length L and this first width W multiply by A respectively and carry out this integer computing, and obtain one the 3rd length L " and one the 3rd width W "; And
With the 3rd length L " and the 3rd width W " be as the criterion, adjust this second length L ' and this second width W '.
2. the method for change contact hole dimension of photo mask pattern as claimed in claim 1 is wherein adjusted this second length L ' mode comprise reduction or increase this second length L '.
3. the method for change contact hole dimension of photo mask pattern as claimed in claim 1, the mode of wherein adjusting this second width W ' comprises reduction or increases this second width W '.
4. the method for change contact hole dimension of photo mask pattern as claimed in claim 1, the mode of wherein carrying out this integer computing comprise and round up, unconditionally cast out or unconditional carry.
5. method that changes dimension of photo mask pattern comprises:
One pattern is provided, and this pattern is made up of a plurality of line segments; And
Adjust the size of this pattern, and the variation dimensionally of this pattern is made as A doubly, then its step is the size of each line segment of adjusting this pattern, comprising:
A) select a line segment in those line segments, the two-end-point of the line segment that this is selected is respectively (x at the coordinate of rectangular coordinate system 1, y 1) and (x 2, y 2) and have one first length L = ( x 2 - x 1 ) 2 + ( y 2 - y 1 ) 2 ;
B) coordinate of this selected line segment amplifies in elder generation, dwindles the coordinate of this selected line segment again, makes the coordinate of this selected line segment be converted to (x 1', y 1'), (x 2', y 2'), x wherein 1', x 2', y 1', y 2' be x 1, x 2, y 1, y 2The value that multiply by A respectively and carry out an integer computing, and this first length L changes one second length into L ′ = ( x 2 ′ - x 1 ′ ) 2 + ( y 2 ′ - y 1 ′ ) 2 ;
C) change this first length and become one the 3rd length L ", the 3rd length L wherein " be the value that this first length L multiply by A and carries out this integer computing;
D) according to the 3rd length L ", adjust this second length L '; And
E) repeating step a～d is up to each line segment of having adjusted this pattern.
6. the method for change dimension of photo mask pattern as claimed in claim 5 is wherein adjusted this second length L ' mode comprise reduction or increase this second length L '.
7. the method for change dimension of photo mask pattern as claimed in claim 5, the mode of wherein carrying out this integer computing comprise and round up, unconditionally cast out or unconditional carry.
CNB2006100714628A 2006-03-24 2006-03-24 Method for changing dimension of photo mask pattern Active CN100526991C (en)

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Application Number Priority Date Filing Date Title
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CN100526991C true CN100526991C (en) 2009-08-12

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