CN100524024C - 曝光方法、曝光装置及元件制造方法 - Google Patents

曝光方法、曝光装置及元件制造方法 Download PDF

Info

Publication number
CN100524024C
CN100524024C CNB031367305A CN03136730A CN100524024C CN 100524024 C CN100524024 C CN 100524024C CN B031367305 A CNB031367305 A CN B031367305A CN 03136730 A CN03136730 A CN 03136730A CN 100524024 C CN100524024 C CN 100524024C
Authority
CN
China
Prior art keywords
levelling
exposure
substrate
mask
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB031367305A
Other languages
English (en)
Chinese (zh)
Other versions
CN1459671A (zh
Inventor
奈良圭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2002148301A external-priority patent/JP4168665B2/ja
Priority claimed from JP2002148309A external-priority patent/JP4172204B2/ja
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of CN1459671A publication Critical patent/CN1459671A/zh
Application granted granted Critical
Publication of CN100524024C publication Critical patent/CN100524024C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
CNB031367305A 2002-05-22 2003-05-20 曝光方法、曝光装置及元件制造方法 Expired - Lifetime CN100524024C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002148301A JP4168665B2 (ja) 2002-05-22 2002-05-22 露光方法及び露光装置、デバイス製造方法
JP2002148309A JP4172204B2 (ja) 2002-05-22 2002-05-22 露光方法及び露光装置、デバイス製造方法
JP2002148309 2002-05-22
JP2002148301 2002-05-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2006101617659A Division CN1983037B (zh) 2002-05-22 2003-05-20 曝光方法、曝光装置及元件制造方法

Publications (2)

Publication Number Publication Date
CN1459671A CN1459671A (zh) 2003-12-03
CN100524024C true CN100524024C (zh) 2009-08-05

Family

ID=29552354

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031367305A Expired - Lifetime CN100524024C (zh) 2002-05-22 2003-05-20 曝光方法、曝光装置及元件制造方法

Country Status (3)

Country Link
KR (1) KR100979454B1 (ko)
CN (1) CN100524024C (ko)
TW (1) TWI278722B (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103969958A (zh) * 2013-01-25 2014-08-06 上海微电子装备有限公司 一种多曝光视场拼接系统和方法
CN106154760A (zh) * 2015-04-15 2016-11-23 上海微电子装备有限公司 一种曝光装置及曝光方法
CN108885289A (zh) * 2016-03-04 2018-11-23 应用材料公司 线栅偏振器制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7388663B2 (en) * 2004-10-28 2008-06-17 Asml Netherlands B.V. Optical position assessment apparatus and method
EP1975982A1 (en) * 2005-12-28 2008-10-01 Nikon Corporation Pattern formation method and pattern formation apparatus, exposure metho and exposure apparatus, and device manufacturing method
TWI452437B (zh) * 2006-11-27 2014-09-11 尼康股份有限公司 An exposure method, a pattern forming method, and an exposure apparatus, and an element manufacturing method
US20080187871A1 (en) * 2007-02-02 2008-08-07 Fujifilm Corporation Pattern forming apparatus and method
US8139199B2 (en) * 2007-04-02 2012-03-20 Nikon Corporation Exposure method, exposure apparatus, light converging pattern formation member, mask, and device manufacturing method
KR101769091B1 (ko) * 2009-08-26 2017-08-30 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
CN101718956B (zh) * 2009-08-31 2013-06-05 四川虹欧显示器件有限公司 用于基板制造的曝光方法及其对位装置
CN103543615A (zh) * 2013-10-29 2014-01-29 苏州德龙激光股份有限公司 激光成像加工装置
CN105527795B (zh) * 2014-09-28 2018-09-18 上海微电子装备（集团）股份有限公司 曝光装置及离焦倾斜误差补偿方法
CN107290937B (zh) * 2016-03-31 2018-10-16 上海微电子装备（集团）股份有限公司 一种投影曝光装置及方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4211150B2 (ja) * 1998-08-20 2009-01-21 株式会社ニコン レーザ干渉計及び露光装置
JP2001023891A (ja) * 1999-07-09 2001-01-26 Canon Inc ステージ装置、露光装置およびデバイス製造方法
JP2002099097A (ja) * 2000-09-25 2002-04-05 Nikon Corp 走査露光方法および走査型露光装置
JP2002134392A (ja) * 2000-10-23 2002-05-10 Nikon Corp 位置計測装置及び方法、露光装置、並びにデバイス製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103969958A (zh) * 2013-01-25 2014-08-06 上海微电子装备有限公司 一种多曝光视场拼接系统和方法
CN103969958B (zh) * 2013-01-25 2016-03-30 上海微电子装备有限公司 一种多曝光视场拼接系统和方法
CN106154760A (zh) * 2015-04-15 2016-11-23 上海微电子装备有限公司 一种曝光装置及曝光方法
CN106154760B (zh) * 2015-04-15 2019-01-29 上海微电子装备（集团）股份有限公司 一种曝光装置及曝光方法
CN108885289A (zh) * 2016-03-04 2018-11-23 应用材料公司 线栅偏振器制造方法

Also Published As

Publication number Publication date
TW200307182A (en) 2003-12-01
CN1459671A (zh) 2003-12-03
TWI278722B (en) 2007-04-11
KR100979454B1 (ko) 2010-09-02
KR20030091055A (ko) 2003-12-01

Similar Documents

Publication Publication Date Title
CN1983037B (zh) 曝光方法、曝光装置及元件制造方法
CN102346378B (zh) 曝光方法、曝光装置、光罩及其制造方法及元件制造方法
JP3093528B2 (ja) 走査型露光装置
JP3376179B2 (ja) 面位置検出方法
CN100524024C (zh) 曝光方法、曝光装置及元件制造方法
EP1573366B1 (en) Continuous direct-write optical lithography
US5933219A (en) Projection exposure apparatus and device manufacturing method capable of controlling polarization direction
US5528027A (en) Scanning exposure apparatus having a scanning device for scanning light beams along the movement direction of a moving mask stage
US5510892A (en) Inclination detecting apparatus and method
KR100389976B1 (ko) 얼라인먼트방법및장치
US5493402A (en) EGA alignment method using a plurality of weighting coefficients
CN101446775B (zh) 一种对准光源装置
KR20010033527A (ko) 포토마스크의 제조방법과 장치 및 디바이스의 제조방법
KR20010033118A (ko) 스테이지 장치 및 노광장치
CN107407894B (zh) 测量装置及测量方法、曝光装置及曝光方法、以及器件制造方法
US20090042115A1 (en) Exposure apparatus, exposure method, and electronic device manufacturing method
KR20100016277A (ko) 노광 방법 및 전자 디바이스 제조 방법
JP2009075094A (ja) 位置検出装置、位置検出方法、露光装置、およびデバイス製造方法
JP2021056533A (ja) 露光装置及び露光方法、並びにフラットパネルディスプレイ製造方法
JP4172204B2 (ja) 露光方法及び露光装置、デバイス製造方法
TW202131112A (zh) 曝光裝置
CN100380235C (zh) 曝光方法及曝光装置
KR19980070407A (ko) 노광 장치
WO1999050893A1 (fr) Procede d'exposition et systeme d'exposition
US20020159041A1 (en) Scanning exposure apparatus, scanning exposure method and mask

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20090805

CX01 Expiry of patent term