CN100501362C - Vacuum sensor - Google Patents
Vacuum sensor Download PDFInfo
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- CN100501362C CN100501362C CNB2007100086017A CN200710008601A CN100501362C CN 100501362 C CN100501362 C CN 100501362C CN B2007100086017 A CNB2007100086017 A CN B2007100086017A CN 200710008601 A CN200710008601 A CN 200710008601A CN 100501362 C CN100501362 C CN 100501362C
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Abstract
This invention relates to a kind of vacuum sensor, especially a minitype vacuum sensor that base on microcomputer electric system technology and utilizing silicon needle array field emission theory to measure size of vacuum. The invention set up silicon needle array emitting cathode, metal anode, glass substrate, shot cavity body and electrode lead. Metal anode sputter at glass substrate; silicon needle array emitting cathode sculpture at silicon slice; the silicon slice and glass substrate bound together to form shooting cavity body; one couple electrode lead respectively adjoin silicon needle array emitting cathode and metal anode, electrode lead respectively by silicon slice and anode metal educed to external connect regulated power supply.
Description
Technical field
The present invention relates to a kind of sensor, especially relate to a kind ofly, utilize the field emission principle of silicon tip array to come the miniature vacuum transducer of measurement of vacuum size based on MEMS (micro electro mechanical system) (MEMS) technology.
Background technology
Vacuum microelectronic device is the product of microelectric technique, MEMS technology and vacuum electronics development, it is a kind of new technology based on the vacuum electronic transport devices, and it mainly is made up of insulation course and vacuum micro chamber between field emission array negative electrode, anode, two electrodes.Because electron transport is carried out in a vacuum, therefore have the switching speed that is exceedingly fast, extraordinary anti-irradiation ability and splendid temperature characterisitic.The more vacuum microelectronic device of research mainly comprises Field Emission Display, field emission illumination device, microelectronic vacuum millimetric wave device, microelectronic vacuum sensor etc. at present.
Along with the develop rapidly of vacuum microelectronics technique, the widespread use of vacuum microelectronic device, increasing microelectronic component and micro mechanical system need be worked under vacuum environment, and also more and more higher to vacuum requirements.And can there be certain residual pressure in existing vacuum sealing technique, and the long problem that also has seal failure of time one, yet the inner vacuum tightness of encapsulation can't be measured again, therefore can't guarantee whether these microelectronic components and micro mechanical system work in the working environment of its design.If miniature vacuum transducer can be integrated in these microelectronic components and the micro mechanical system, can monitor the vacuum tightness of the working environment of these devices so at any time, thereby can learn that these vacuum microelectronic devices and MEMS (micro electro mechanical system) whether in its optimum Working, guarantee its reliability.Therefore miniature as can be seen vacuum transducer has a wide range of applications at microelectronic vacuum and micro mechanical system field, and along with the development of MEMS technology, it will obtain development at full speed and use widely.
Existing miniature vacuum transducer mainly contains heat conduction formula vacuum transducer, diaphragm type vacuum transducer and resonant mode vacuum transducer etc.
Its principle of work of heat conduction formula vacuum transducer is relevant with the pressure of ambient gas according to the loss of space heat elimination towards periphery of the object of heat, thereby draws the vacuum tightness of environment of living in by the variation of measuring this object temperature.(the Bruce C.S.Chou such as Bruce.C.S.Chou in Taiwan in 1996, Yeong-Maw Chen.A sensitive Pirani vacuum sensor and theelectrothermal SPICE modeling.Sensor andActuators A, 1996,53:273-277) developed a kind of highly sensitive Pi Lani vacuum transducer, it utilizes constant temperature output circuit and technique for temperature compensation to suppress temperature drift on every side effectively, make its measurement range obtain very big expansion, reach (13.3～1.33) * 10
-5Pa.
The principle of work of diaphragm type vacuum transducer is that sensitive thin film is formed capacity plate antenna with a parallel with it electrode, when extraneous vacuum tightness changes, deformation will be responded to and take place to sensitive thin film, thereby make the capacitance size of capacity plate antenna change, by measuring the size that this changes in capacitance can calculate vacuum tightness.(H.Hemmi such as H.Hemni in 1993, S.Shoji, K.Yosimi, and M.Esashi.Vacuum package for microresonators by glass-silicon anodic bonding, 7thInternational Conference on Solid-State Sensor and Actuators, Trancsducers ' 93, Japan, 1993:584-587) Yan Zhi miniature thin-film vacuum transducer just is being based on this principle, but limit by technology, and measurement range is quite limited.There were many relevant researchs carrying out afterwards again, (the Wang Yuelin such as M.Esashi of the Wang Yuelin of Zhejiang University and Japan, M.Esashi.. novel dynamic balance micromechanics vacuum transducer research. vacuum science and technology, 1999,19 (4): 304-311) developed a kind of miniature vacuum transducer of film of force balance type, expand the measurement range of the miniature vacuum meter of diaphragm type greatly, and greatly improved its sensitivity.
The principle of work of resonant mode vacuum transducer is exactly the damping action according to gas molecule, and the resonant frequency difference of vibrating object under different vacuum tightness is measured vacuum tightness indirectly by the measurement to the variation of frequency.(the Jin Xinyu such as Jin Xinyu of Zhejiang University in 1999, Zhang Yu, Zhou Qimin, Deng. the research of silicon micro-mechanical resonate sensor fixed ampllitude vacuum meter. instrumental technique and sensor, 1999:14-16) developed a kind of novel silicon micro-mechanical resonate vacuum transducer, this silicon micro-mechanical resonate vacuum transducer is as harmonic oscillator with the semi-girder that forms by anisotropic etch on monocrystalline silicon piece, with beam free end mass bottom surface is top electrode, silicon substrate with silicon-Si direct bonding is a bottom electrode, form electrostatic actuator, and be manufactured with piezo-resistance device at the rear portion of semi-girder, the vibrations of semi-girder are converted to resistance signal output.
The vacuum transducer of heat conduction formula is subjected to the influence of environment temperature very big, so its range of application is limited greatly; The critical component annular seal space of the vacuum transducer of diaphragm type is subjected to the restriction of Sealing Technology and seal failure problem, and range of application is also limited relatively; The difficulty of processing of its resonance beam of vacuum transducer of resonant mode is big, and because resonance frequency is subjected to the influence of environment temperature also very big, its range of application also is restricted.
Summary of the invention
The objective of the invention is at the existing above-mentioned shortcoming of existing miniature vacuum transducer, a kind of have principle simple possible, little, ripe characteristics such as integrated, the vacuum transducer that range of application has a extensive future of simply being easy to of processing technology affected by environment are provided.
The present invention is provided with silicon tip array emission cathode, metal anode, glass substrate, emission cavity and contact conductor.Metal anode sputters on the glass substrate, silicon tip array emission cathode is etched on the silicon chip, be etched with the silicon chip of silicon tip array emission cathode and glass substrate that sputter the has metal anode formation emission cavity that is bonded together, 1 pair of contact conductor connects silicon tip array emission cathode and metal anode respectively, and contact conductor is drawn external power supply by silicon chip and anode metal respectively.
Silicon tip array emission cathode is used for emitting electrons; Metal anode is used for collecting from silicon tip array emission cathode ejected electron.
Basic functional principle of the present invention is, the relation of utilizing microelectronic vacuum midfield transmitter current size to change with vacuum tightness, with the silicon tip array as electron emission source, metal anode is as electron collector, under the effect of high-voltage electric field, produce a transmitter current, come the size of indirect measurement of vacuum by the size of measurement field transmitter current.Because the generation of an emission phenomenon and the size of transmitter current are relevant with the die opening of size harmonizing yinyang two interpolars of silicon tip, can improve the consistance of silicon tip array and obtain less silicon tip radius-of-curvature by silicon micromachining technology, and several microns die opening only, thereby improve a performance of emission greatly, an emission phenomenon can take place under lower electric field action.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Fig. 2 is the silicon tip array emission cathode structure synoptic diagram of the embodiment of the invention.
Fig. 3 is the enlarged drawing of overlooking of Fig. 2.
Fig. 4 is the axonometric drawing of Fig. 2.
Embodiment
Following examples will the present invention is further illustrated in conjunction with the accompanying drawings.
Referring to Fig. 1 and 2, the embodiment of the invention is provided with silicon tip array emission cathode 1, metal anode 2, glass substrate 3, emission cavity 4 and 1 pair of contact conductor 5.The silicon chip that is etched with silicon tip array emission cathode 1 has the glass substrate 3 of metal anode 2 to be bonded together by anode silicon-Bo bonding and sputter, do not contact between silicon tip array emission cathode 1 and the metal anode 2 and form 4,1 pairs of contact conductors 5 of emission cavity and draw with peripheral circuit with metal anode 2 from silicon tip array emission cathode 1 respectively and be connected.
Transducing part of the present invention (comprising silicon tip array emission cathode 1, metal anode 2, glass substrate 3 and emission cavity 4) is inserted in the vacuum environment of needs measurement, provide voltage by stabilized voltage supply then, voltage is added to metal anode 2 and silicon tip array emission cathode 1 two ends by 1 pair of contact conductor 5.When the two ends field intensity reaches certain intensity, an emission phenomenon will take place, launch electronics by silicon tip array emission cathode 1, electronics transmits in emission cavity 4, collected by metal anode 2 at last, form a transmitter current, the size of this transmitter current is relevant with the vacuum tightness size of the environment at place of the present invention, transmitter current can be obtained by the galvanometer measurement, by calculating the size that just can draw vacuum tightness.
Claims (1)
1. vacuum transducer, it is characterized in that being provided with silicon tip array emission cathode, metal anode, glass substrate, emission cavity and contact conductor, metal anode sputters on the glass substrate, silicon tip array emission cathode is etched on the silicon chip, be etched with the silicon chip of silicon tip array emission cathode and glass substrate that sputter the has metal anode formation emission cavity that is bonded together, 1 pair of contact conductor connects silicon tip array emission cathode and metal anode respectively, contact conductor is drawn by silicon chip and metal anode respectively, and external power supply.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100086017A CN100501362C (en) | 2007-02-08 | 2007-02-08 | Vacuum sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100086017A CN100501362C (en) | 2007-02-08 | 2007-02-08 | Vacuum sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101034029A CN101034029A (en) | 2007-09-12 |
| CN100501362C true CN100501362C (en) | 2009-06-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100086017A Expired - Fee Related CN100501362C (en) | 2007-02-08 | 2007-02-08 | Vacuum sensor |
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| CN (1) | CN100501362C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102230837A (en) * | 2011-03-30 | 2011-11-02 | 厦门大学 | Temperature compensating microscopic vacuum sensor |
| CN112903183B (en) * | 2019-11-19 | 2022-11-22 | 北京大学 | On-chip miniature ionization vacuum sensor and manufacturing method thereof |
| CN111982393B (en) * | 2020-08-27 | 2021-11-19 | 天津科技大学 | Real-time monitoring vacuum instrument |
| CN112362214A (en) * | 2020-11-02 | 2021-02-12 | 厦门大学 | Method and system for online identification of belt tension |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2282680Y (en) * | 1997-04-01 | 1998-05-27 | 中国科学院合肥智能机械研究所 | Vacuum microelectronic gas sensor |
| CN2537008Y (en) * | 2002-02-07 | 2003-02-19 | 重庆大学 | Vacuum microelectron pressure sensor |
| EP1698878A1 (en) * | 2005-03-04 | 2006-09-06 | Inficon GmbH | Electrode configuration and pressure measuring apparatus |
-
2007
- 2007-02-08 CN CNB2007100086017A patent/CN100501362C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2282680Y (en) * | 1997-04-01 | 1998-05-27 | 中国科学院合肥智能机械研究所 | Vacuum microelectronic gas sensor |
| CN2537008Y (en) * | 2002-02-07 | 2003-02-19 | 重庆大学 | Vacuum microelectron pressure sensor |
| EP1698878A1 (en) * | 2005-03-04 | 2006-09-06 | Inficon GmbH | Electrode configuration and pressure measuring apparatus |
Non-Patent Citations (4)
| Title |
|---|
| 硅尖的制备及在传感器技术中的应用. 王艳华，王明亮，孙道恒，马海阳.传感器技术，第22卷第6期. 2003 |
| 硅尖的制备及在传感器技术中的应用. 王艳华，王明亮，孙道恒，马海阳.传感器技术，第22卷第6期. 2003 * |
| 硅微机械谐振传感器稳幅式真空计的研究. 金心宇，张昱，周绮敏，王跃林.仪器技术与传感器，第8期. 1999 |
| 硅微机械谐振传感器稳幅式真空计的研究. 金心宇，张昱，周绮敏，王跃林.仪器技术与传感器，第8期. 1999 * |
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| CN101034029A (en) | 2007-09-12 |
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Granted publication date: 20090617 Termination date: 20120208 |