CN102230837A - Temperature compensating microscopic vacuum sensor - Google Patents
Temperature compensating microscopic vacuum sensor Download PDFInfo
- Publication number
- CN102230837A CN102230837A CN 201110078435 CN201110078435A CN102230837A CN 102230837 A CN102230837 A CN 102230837A CN 201110078435 CN201110078435 CN 201110078435 CN 201110078435 A CN201110078435 A CN 201110078435A CN 102230837 A CN102230837 A CN 102230837A
- Authority
- CN
- China
- Prior art keywords
- emission cavity
- emission
- extraction electrode
- anode
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a temperature compensating microscopic vacuum sensor, and relates to a microscopic vacuum sensor. The temperature compensating microscopic vacuum sensor is provided with a substrate, a silicon tip array emission cathode, a metal anode, a cathode extraction electrode, an anode extraction electrode, and two emission cavities. The metal anode and the anode extraction electrode are sputtered on a surface of the substrate. The cathode extraction electrode is sputtered on a silicon chip. The silicon tip array emission cathode is etched on the silicon chip. The silicon chip and the substrate are bonded together to form a first emission cavity and a second emission cavity. The first emission cavity is connected with detected environment. The second emission cavity allows the silicon chip and the substrate to be sealed in vacuum through bonding technology. The first emission cavity and the second emission cavity are connected together through the silicon chip. Through the anode extraction electrode and the cathode extraction electrode, a fixed voltage is added between anodes and cathodes of the first emission cavity and the second emission cavity. The temperature compensating microscopic vacuum sensor is accurate in measurement and has popularization and application value.
Description
Technical field
The present invention relates to a kind of micro-vacuum sensor, particularly relate to a kind of band temp. compensation type micro-vacuum sensor of the MEMS of utilization technology based on the emission of nanometer silicon tip field.
Background technology
Because vacuum microelectronic device has advantages such as radioresistance, speed-sensitive switch, make it obtain using widely, for example display device, communication, data processing and sensor etc. in various fields.At present, most of microelectronic component and micro-electro-mechanical sensors all need be under certain vacuum environment could operate as normal, because there is unrelieved stress in existing vacuum sealing technique and has the problem of seal failure as time passes, therefore must monitor the vacuum tightness of these device working environments at any time, guarantee its reliability, so the micro-vacuum sensor becomes a focus of present vacuum transducer research and extensively paid attention to by people.
Existing micro-vacuum sensor mainly contains heat conduction decline vacuum transducer, diaphragm type micro-vacuum sensor, resonant mode micro-vacuum sensor, ionization type micro-vacuum sensor and microelectronic vacuum vacuum transducer etc.The decline principle of work of vacuum transducer of heat conduction is a gas molecule mean free path when being longer than characteristic dimension, and gas heat conduction phenomenon is relevant with gas pressure intensity, draws the vacuum tightness of object environment of living in by the Measuring Object temperature variation.The principle of work of diaphragm type micro-vacuum sensor is to produce distortion according to flexible member under the static pressure of gas molecule, with machinery, optics or electric method this pressure change effect is detected then, with this measurement gas pressure.The principle of work of resonant mode micro-vacuum sensor is because the damping action of gas molecule, makes the resonant frequency difference of vibrating object under different vacuum tightness, measures vacuum tightness by detecting frequency change.The principle of work of ionization type micro-vacuum sensor is to utilize lotus energy particle with the gas molecule ionization in the vacuum, and the ion flow that is produced is relevant with vacuum tightness, draws vacuum tightness by measuring ion flow.The microelectronic vacuum vacuum transducer combines microelectric technique, MEMS technology and vacuum electronic technology, and the volume of sensor is dwindled greatly, has remedied the traditional vacuum sensor and be difficult to integrated defective on volume.What research was more at present is the vacuum transducer of microelectronic vacuum diode-type, it is based on Fowler-Nordheim field emission theory, utilize anode film under the effect of gas molecule pressure, to produce elastic deformation, make an emitter spacing change and cause a transmitter current to change, change the size that draws vacuum tightness by measuring electric current.Because the micro-vacuum sensor of diaphragm type and microelectronic vacuum formula itself has membrane type sealed cavity configuration, have residual stress problems, ionization type, resonant mode, the heat conduction vacuum transducer structure that declines is complicated, and manufacture difficulty is bigger, difficult integrated with other micro elements, so range of application is restricted.
In order to address the above problem, grandson present inventor road perseverance provides a kind of micro-vacuum sensor based on the emission of nanometer silicon tip field in Chinese patent ZL200710008601.7, this sensor is to be foundation with the semiconductcor field emission principle, cause a principle of transmitter current change thereby utilize emitter actual work function changed by vacuum tightness and change, by measuring the size that size of current draws vacuum tightness.This sensor have signal easily detect, be easy to integrated, be convenient to advantages such as batch process, in the field that needs vacuum measurement such as vacuum equipment, aerospace appts, medicine equipment etc., all have huge market potential.But also there are some problems in this sensor: find in the experiment, this sensor for temperature is very responsive, under constant situation such as environment vacuum tightness, voltage, when temperature change, the field transmitter current is acute variation thereupon, and this point has limited the practical application of this sensor.In order to prove the susceptibility of this sensor for temperature, people (Genhuang Zhuang such as Genhuang Zhuang, Lingyun Wang, DaohengSun.The Effect of Temperature on Field Emission Current.Adcanced Materials Research, 2009,60-61:461-464) this sensor has been carried out the experiment of 3 kinds of radiating modes: the experiment pair of sensors adds the voltage that different time is interrupted, a cold metal rod of experiment dual-purpose feeler surface, before experiment three is placed on the fan that starts to sensor, influence sensor temperature by these 3 kinds different heat diffusion modes, find all that in 3 experiments obvious variation has taken place a transmitter current.These experiments show that even conditions such as environment vacuum tightness, voltage remain unchanged, if temperature change, for example: environment temperature changes or the electric current of sensor own changes the heating variation that is produced, and all can cause the variation of current output sensor value.This shows that for a same vacuum transducer, under the certain situation of voltage, environment vacuum tightness and temperature all are the influence factors of a transmitter current.So the method that must want is eliminated the electric current variation that is caused by temperature change, thereby set up the one-to-one relationship between an environment vacuum tightness and the transmitter current, just can make this sensor have actual using value.
Summary of the invention
The objective of the invention is at existing based on nanometer silicon tip field emission micro-vacuum sensor to external world or self-temperature change comparatively responsive defective, provide a kind of with temperature compensating type, measure the band temp. compensation type micro-vacuum sensor that application value more accurately, is more arranged.
The present invention is provided with substrate, silicon tip array emission cathode, metal anode, the negative electrode extraction electrode, the anode extraction electrode, the 1st emission cavity and the 2nd emission cavity, metal anode and anode extraction electrode sputter on the surface of substrate, the negative electrode extraction electrode sputters on the silicon chip, silicon tip array emission cathode is etched on the silicon chip, silicon chip and substrate bonding form the 1st emission cavity and the 2nd emission cavity together, the 1st emission cavity with the environmental facies of surveying intercommunicated, the 2nd emission cavity makes silicon chip and substrate vacuum sealing by bonding techniques, the 1st emission cavity and the 2nd emission cavity link together by silicon chip, between the negative electrode of the 1st emission cavity and the 2nd emission cavity and anode, add fixed voltage by anode extraction electrode and negative electrode extraction electrode, measure the size of two field transmitter currents respectively, draw the size of environment vacuum tightness by the difference of two field transmitter currents that record.
Described substrate can adopt glass substrate.
According to the difference of measuring accuracy, the interior pressure of the 2nd emission cavity can be set 10
-6～10
-1Pa changes.
Silicon tip array emission cathode in described the 1st emission cavity and the 2nd emission cavity is identical, and metal anode, negative electrode extraction electrode, anode extraction electrode size shape can be identical.In the measurement, in order to obtain higher sensitivity, the spacing between silicon tip array emission cathode and the metal anode can be controlled within 1～20 mu m range.Because the field transmitter current in the 2nd emission cavity only is subjected to influence of temperature change, field transmitter current in the 1st emission cavity is subjected to vacuum tightness and influence of temperature variation simultaneously, add silicon chip and have the good heat transfer performance, thereby 2 emission cavities all the other conditions except the vacuum tightness difference comprise that temperature is all identical, therefore the difference between 2 field transmitter currents just can reflect the size of the environment vacuum tightness of surveying, thereby has greatly reduced the caused measuring error of temperature variation.The big I of shape of the 1st emission cavity and the 2nd emission cavity is identical.
Compared with prior art, outstanding effect of the present invention is to have increased a sealed vacuum chamber of playing temperature compensation function, by measurement respectively and comparative analysis to two emission cavity field transmitter currents, set up the quantitative mathematical relation between environment vacuum tightness and two transmitter currents, greatly reduce the measuring error that existing field emission vacuum sensor temperature influence is produced, can improve the measuring accuracy of sensor significantly.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention.
Fig. 2 is the A-A cut-away view (sectional view of the 2nd emission cavity) of Fig. 1.
Fig. 3 is the vertical view of the embodiment of the invention.
Fig. 4 is the pairing silicon tip array of the 2nd emission cavity emission cathode planimetric map of the embodiment of the invention.
Fig. 5 is the pairing silicon tip array of the 1st emission cavity emission cathode planimetric map of the embodiment of the invention.
Fig. 6 is the metal anode of the embodiment of the invention and the planimetric map of anode extraction electrode.
Fig. 7 is the test macro synoptic diagram of the embodiment of the invention.
Embodiment
Referring to Fig. 1～6, the embodiment of the invention is provided with substrate 1, silicon tip array emission cathode 2, metal anode 3, negative electrode extraction electrode 4, anode extraction electrode 5 and emission cavity, metal anode 3 and anode extraction electrode 5 sputter on the surface of substrate 1, negative electrode extraction electrode 4 sputters on the silicon chip, silicon tip array emission cathode 2 is etched on the silicon chip, silicon chip and substrate 1 are bonded together and form 2 emission cavities, the 1st emission cavity 6 with the environmental facies of surveying intercommunicated, the 2nd emission cavity 7 makes silicon chip and substrate 1 vacuum seal by bonding techniques, the 1st emission cavity 6 and the 2nd emission cavity 7 link together by silicon chip, between the negative electrode of the 1st emission cavity 6 and the 2nd emission cavity 7 and anode, add fixed voltage by anode extraction electrode 5 and negative electrode extraction electrode 4, measure the size of two field transmitter currents respectively, draw the size of environment vacuum tightness by the difference of two field transmitter currents that record.Described substrate 1 can adopt glass substrate 1.
According to the difference of measuring accuracy, pressure in the 2nd emission cavity 7 can be set 10
-6～10
-1Pa changes.
Described the 1st emission cavity 6 is identical with silicon tip array emission cathode 2 in the 2nd emission cavity 7, and metal anode 3, negative electrode extraction electrode 4, anode extraction electrode 5 size shape can be identical.In the measurement, in order to obtain higher sensitivity, the spacing between silicon tip array emission cathode 2 and the metal anode 3 can be controlled within 1～20 mu m range.Because the field transmitter current in the 2nd emission cavity 7 only is subjected to influence of temperature change, field transmitter current in the 1st emission cavity 6 is subjected to vacuum tightness and influence of temperature variation simultaneously, add silicon chip and have the good heat transfer performance, thereby 2 emission cavities all the other conditions except the vacuum tightness difference comprise that temperature is all identical, difference between 2 field transmitter currents just can reflect the size of the environment vacuum tightness of surveying, thereby reduces the caused measuring error of temperature variation.The big I of shape of the 1st emission cavity 6 and the 2nd emission cavity 7 is identical.
The 1st emission cavity 6 is interconnected with the vacuum environment of surveying, and supposes that the vacuum environment air pressure of surveying is P1; The 2nd emission cavity 7 is annular seal spaces isolated with the survey vacuum environment, and its vacuum tightness is a constant, and the air pressure when supposing to make in the sealing cavity is P2.Obviously, P1 needs the measured change amount, and P2 is the constant of artificial control.According to the principle of work of field emission micro-vacuum sensor as can be known, for die opening, silicon tip shape, the constant field emitting structural of silicon tip radius-of-curvature, the size of its transmitter current depends on the size of environment vacuum tightness.Simultaneously, a transmitter current also can change along with the change of temperature.Add identical fixed voltage between the anode and cathode extraction electrode of the 1st emission cavity 6 and the 2nd emission cavity 7, owing to the field emitting structural in two cavitys is identical, therefore, the size of two field transmitter currents just depends on environment vacuum tightness and temperature.For the field transmitter current I1 in the 1st emission cavity 6, it is subjected to environment vacuum tightness and influence of temperature variation simultaneously; And for the field transmitter current I2 in the 2nd emission cavity 7, because air pressure P2 is a constant, so I2 only is acted upon by temperature changes.The 1st emission cavity 6 is connected by being connected silicon chip 9 with the 2nd emission cavity 7, because silicon has good heat-conducting, so the temperature in two emission cavities is identical, so the change of the field transmitter current that causes of temperature influence is also identical.Can know by above analysis, difference between I1 and the I2 only is by the different of vacuum tightness in environment vacuum tightness and the annular seal space and produce, compare by differential analysis I1 and I2, obtain new current parameters I, set up the one-to-one relationship between electric current I and the environment vacuum tightness, just can go to obtain the vacuum tightness of the environment of surveying with the I that obtains, so this kind metering system can greatly reduce because the variation of the field transmitter current that temperature change causes, thereby improve the measuring accuracy of sensor.
Referring to Fig. 7, vacuum transducer of the present invention is put into the vacuum environment of required measurement, be added between the metal anode 3 and silicon tip array emission cathode 2 of two cavitys by negative electrode extraction electrode 4 and anode extraction electrode 5 fixed voltage suitable size, voltage is provided by stabilized voltage supply E, field transmitter current I1 in the 1st emission cavity 6 is read by galvanometer A1 measurement, field transmitter current I2 in the 2nd emission cavity 7 is read by galvanometer A2 measurement, and A1 is by the consistent galvanometer of the accuracy class of same manufacturer production with A2.Simultaneously, pass through negative electrode extraction electrode, silicon chip, metal anode, anode extraction electrode formation path, therefore need one layer insulating 8 be set, guarantee that the electric current that galvanometer records is a transmitter current at silicon chip and metal anode junction in order to prevent electric current.Suppose funtcional relationship between I and I1, the I2 be I=G (I1, I2), the funtcional relationship between I and the environment vacuum tightness P is P=H (I), so the funtcional relationship of P and I1, I2 be P=H (G (I1, I2))=F (and I1, I2); Just can calculate the environment vacuum tightness P that surveys with I1, I2 easily by this funtcional relationship, because the P that tested has greatly reduced the influence that temperature variation brings and only with environment vacuum tightness relation arranged, therefore more existing micro-vacuum sensor measurement based on the emission of nanometer silicon tip field is more accurate.
Claims (6)
1. be with temp. compensation type micro-vacuum sensor for one kind, it is characterized in that being provided with substrate, silicon tip array emission cathode, metal anode, the negative electrode extraction electrode, the anode extraction electrode, the 1st emission cavity and the 2nd emission cavity, metal anode and anode extraction electrode sputter on the surface of substrate, the negative electrode extraction electrode sputters on the silicon chip, silicon tip array emission cathode is etched on the silicon chip, silicon chip and substrate bonding form the 1st emission cavity and the 2nd emission cavity together, the 1st emission cavity with the environmental facies of surveying intercommunicated, the 2nd emission cavity makes silicon chip and substrate vacuum sealing by bonding techniques, the 1st emission cavity and the 2nd emission cavity link together by silicon chip, between the negative electrode of the 1st emission cavity and the 2nd emission cavity and anode, add fixed voltage by anode extraction electrode and negative electrode extraction electrode, measure the size of two field transmitter currents respectively, draw the size of environment vacuum tightness by the difference of two field transmitter currents that record.
2. a kind of band temp. compensation type micro-vacuum sensor as claimed in claim 1 is characterized in that described substrate adopts glass substrate.
3. a kind of band temp. compensation type micro-vacuum sensor as claimed in claim 1 is characterized in that the interior pressure of described the 2nd emission cavity is 10
-6～10
-1Pa changes.
4. a kind of band temp. compensation type micro-vacuum sensor as claimed in claim 1 is characterized in that the interior silicon tip array emission cathode of described the 1st emission cavity and the 2nd emission cavity is identical.
5. a kind of band temp. compensation type micro-vacuum sensor as claimed in claim 1 is characterized in that described metal anode, negative electrode extraction electrode, anode extraction electrode size shape are identical.
6. a kind of band temp. compensation type micro-vacuum sensor as claimed in claim 1 is characterized in that the shape size of described the 1st emission cavity and the 2nd emission cavity is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110078435 CN102230837A (en) | 2011-03-30 | 2011-03-30 | Temperature compensating microscopic vacuum sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110078435 CN102230837A (en) | 2011-03-30 | 2011-03-30 | Temperature compensating microscopic vacuum sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102230837A true CN102230837A (en) | 2011-11-02 |
Family
ID=44843425
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110078435 Pending CN102230837A (en) | 2011-03-30 | 2011-03-30 | Temperature compensating microscopic vacuum sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102230837A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931193A (en) * | 2014-03-19 | 2015-09-23 | 北京大学 | MEMS Pirani gauge with reference vacuum chamber |
| CN111220656A (en) * | 2020-01-21 | 2020-06-02 | 中国工程物理研究院流体物理研究所 | Device and method for detecting cathode pollution degree of X-ray diode |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2499729A1 (en) * | 2002-09-19 | 2004-04-08 | Otto-Von-Guericke-Universitaet Magdeburg | Cold-cathode ionisation manometer with two separate cathodes for a long service life |
| CN101034029A (en) * | 2007-02-08 | 2007-09-12 | 厦门大学 | Vacuum sensor |
| CN101084422A (en) * | 2004-12-14 | 2007-12-05 | 布鲁克机械公司 | Method and apparatus for storing vacuum gauge calibration parameters and measurement data on a vacuum gauge structure |
| CN101153826A (en) * | 2006-09-19 | 2008-04-02 | 新科实业有限公司 | Air pressure sensor |
| CN101228422A (en) * | 2005-03-10 | 2008-07-23 | 北美泰密克汽车公司 | Media isolated absolute pressure sensor |
| US20090100935A1 (en) * | 2005-05-26 | 2009-04-23 | Arthur Leigh | Surface Acoustic Wave (Saw) Based Pressure Sensor |
-
2011
- 2011-03-30 CN CN 201110078435 patent/CN102230837A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2499729A1 (en) * | 2002-09-19 | 2004-04-08 | Otto-Von-Guericke-Universitaet Magdeburg | Cold-cathode ionisation manometer with two separate cathodes for a long service life |
| CN101084422A (en) * | 2004-12-14 | 2007-12-05 | 布鲁克机械公司 | Method and apparatus for storing vacuum gauge calibration parameters and measurement data on a vacuum gauge structure |
| CN101228422A (en) * | 2005-03-10 | 2008-07-23 | 北美泰密克汽车公司 | Media isolated absolute pressure sensor |
| US20090100935A1 (en) * | 2005-05-26 | 2009-04-23 | Arthur Leigh | Surface Acoustic Wave (Saw) Based Pressure Sensor |
| CN101153826A (en) * | 2006-09-19 | 2008-04-02 | 新科实业有限公司 | Air pressure sensor |
| CN101034029A (en) * | 2007-02-08 | 2007-09-12 | 厦门大学 | Vacuum sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104931193A (en) * | 2014-03-19 | 2015-09-23 | 北京大学 | MEMS Pirani gauge with reference vacuum chamber |
| CN111220656A (en) * | 2020-01-21 | 2020-06-02 | 中国工程物理研究院流体物理研究所 | Device and method for detecting cathode pollution degree of X-ray diode |
| CN111220656B (en) * | 2020-01-21 | 2022-05-17 | 中国工程物理研究院流体物理研究所 | Device and method for detecting cathode pollution degree of X-ray diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103115720B (en) | Quartz girder resonant mode micro-pressure sensor chip with silicon substrate single island structure | |
| JP5778619B2 (en) | Pressure sensor | |
| CN103105248B (en) | Silicon substrate double-paddle structure quartz beam resonant micro pressure sensor | |
| US10393608B2 (en) | Pressure change measuring apparatus and pressure change measuring method | |
| CN101706345A (en) | Method for compensating for heat drift of sensibility of micro pressure sensor | |
| CN102928131B (en) | Quartz resonance beam type micro-pressure sensor chip | |
| WO2013002180A1 (en) | Diaphragm barometer | |
| Yu et al. | Realization of a micro pressure sensor with high sensitivity and overload by introducing beams and Islands | |
| CN202141554U (en) | Ceramic structure metal sensitive diaphragm capacitance pressure transducer | |
| Kinnell et al. | A hollow stiffening structure for low-pressure sensors | |
| CN207468189U (en) | A kind of pressure resistance type MEMS temperature sensor | |
| Mansoor et al. | SOI CMOS multi-sensors MEMS chip for aerospace applications | |
| CN102230837A (en) | Temperature compensating microscopic vacuum sensor | |
| Cheng et al. | A MEMS resonant differential pressure sensor with high accuracy by integrated temperature sensor and static pressure sensor | |
| CN100501362C (en) | Vacuum sensor | |
| JP2014089183A (en) | Pressure sensor | |
| CN202512136U (en) | Capacitive acceleration sensor | |
| CN104990648B (en) | A kind of pressure sensor and its pressure detection method and pressure-detecting device | |
| Han et al. | Miniature capacitance diaphragm gauge for absolute vacuum measurement | |
| CN107941409B (en) | Resistance-type gas pressure gauge based on nano particle dot matrix | |
| Sujit et al. | Polysilicon piezoresistive MEMS pressure sensor: Study of analytical solutions for diaphragm and design & simulation | |
| CN113405946B (en) | Micro-electromechanical resonance type viscosity sensor | |
| Shimatani et al. | Monitoring volcanic activity with high sensitive infrasound sensor using a piezoresistive cantilever | |
| CN104931193A (en) | MEMS Pirani gauge with reference vacuum chamber | |
| CN103968975B (en) | Based on the anti-corrosion pressure transducer of PDMS pressure drag and stainless steel electric capacity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20111102 |