CN100495762C

CN100495762C - Light-emitting device, method for manufacturing light-emitting device, and electronic apparatus

Info

Publication number: CN100495762C
Application number: CNB2006100049259A
Authority: CN
Inventors: 林建二
Original assignee: Seiko Epson Corp
Current assignee: Seiko Epson Corp
Priority date: 2005-01-17
Filing date: 2006-01-16
Publication date: 2009-06-03
Anticipated expiration: 2026-01-16
Also published as: CN1819302A

Abstract

A light-emitting device includes a base; a plurality of first electrodes; a partition having a plurality of openings located at positions corresponding to the first electrodes; organic functional layers each arranged in the corresponding openings; a second electrode covering the partition and the organic functional layers; an organic buffer layer covering the second electrode; a gas barrier layer covering the organic buffer layer; and an intermediate protective layer, disposed between the organic buffer layer and the gas barrier layer, having an elasticity which is greater than that of the organic buffer layer and which is less than that of the gas barrier layer. These layers and electrodes are arranged on or above the base.

Description

The manufacture method of light-emitting device, light-emitting device and electronic equipment

Technical field

The electronic equipment that the present invention relates to light-emitting device and manufacture method thereof and have this light-emitting device.

Background technology

In recent years, along with the variation of information machine etc. etc., few and demand light-weighted flat display apparatus is more and more higher for consuming electric power.As such panel display apparatus, that knows has, and has the organic El device of luminescent layer.Such organic El device generally is the structure that has luminescent layer between anode and negative electrode.And then in order to improve the hole injection, the having of suggestion is in the structure that has disposed hole injection layer between anode and the luminescent layer or disposed the structure of electron injecting layer between luminescent layer and negative electrode.

Use is at the material of the luminescent layer of organic El device, hole injection layer, electron injecting layer, the reaction of moisture in the many and atmosphere and be easy to deterioration.If these layers deterioration then forms the non-luminous region of so-called stain on organic El device, as light-emitting component, its lifetime.Thereby in such organic El device, suppressing becomes problem from the influence of moisture or oxygen etc.

In order to solve such problem, what generally adopt is that the bonding seal member that is made of glass or metal prevents entering of moisture or oxygen thus on the substrate of organic El device.But, follow the maximization and the slimming/lightweight of display, only just be difficult to prevent entering of moisture or oxygen by bonding seal member.In addition, forms the area of driving element or distribution for fully guaranteeing to follow to maximize, advised use from the top light emitting of seal member side-draw bright dipping (

Emission) necessity of structure.In order to realize such demand, the hermetically-sealed construction of the film that being to use of seeking is transparent, light weight and anti-intensive properties are superior.

Therefore, in recent years, for the maximization of tackling display unit and lightening, that having of using the is called elastic membrane sealing described elastic membrane sealing of technology (for example, patent documentation 1～4) become embrane method (for example ion plating, ECR plasma sputtering method, ECR plasma CVD, surface wave plasma CVD, ICP-CVD etc.) that film transparent and that have a silicon nitride, Si oxide, pottery etc. of superior choke (gas barrier) property is formed on the light-emitting component as barrier layer for gases by high-density plasma.According to such technology, can prevent that moisture from entering in the light-emitting component.

[patent documentation 1] spy opens flat 9-No. 185994 communiques

[patent documentation 2] spy opens communique 2001-No. 284041

[patent documentation 3] spy opens communique 2000-No. 223264

[patent documentation 4] spy opens communique 2003-No. 17244

Yet,, can not obtain the sufficient characteristics of luminescence or luminescent lifetime even under the situation that adopts such technology, can not prevent that sealing enters from the outside.Especially confirmed following practical work, that is,, can produce and peel off or the crack, and then water can enter therefrom at the peripheral part of barrier layer for gases or the end difference that forms by the next door discrete pixels.

Thereby, by have the organic buffer layer of the upper surface of general planar in the lower layer side configuration of barrier layer for gases, can prevent from barrier layer for gases, to produce the crack.That is, can be by the perk of this organic buffer layer buffering substrate or the stress that volumetric expansion causes.And then, above the general planar organic buffer layer, the top barrier layer for gases that is configured in organic buffer layer also is flattened, therefore, the position that the barrier layer for gases upper stress is concentrated does not exist, thereby, can prevent the crack.

Yet when organic buffer layer generation thermal deformation (expanding or contraction), owing to produce the crack on barrier layer for gases, therefore, existence can not prevent the problem that moisture enters from the outside fully.

Summary of the invention

The present invention makes in view of above-mentioned situation, and its purpose is to provide and has suppressed peeling off or light-emitting device and manufacture method and electronic equipment that the crack causes moisture to enter by barrier layer for gases.

In the manufacture method and electronic equipment of light-emitting device of the present invention, light-emitting device, adopted following method in order to address the above problem.

A kind of light-emitting device is characterized in that, on matrix, has: a plurality of the 1st electrodes; Next door with a plurality of peristomes corresponding with the formation position of described the 1st electrode; Be disposed at the organic function layer of each described peristome; Cover the 2nd electrode of described next door and described organic function layer; Cover the organic buffer layer of described the 2nd electrode; Cover the barrier layer for gases of described organic buffer layer; And intermediate protective layer, it is configured between described organic buffer layer and the barrier layer for gases, and the described organic buffer layer of modular ratio is big and littler than described barrier layer for gases.

According to the present invention as can be known; even organic buffer layer is set as thermal deformation (expanding and contraction); also owing between barrier layer for gases, dispose intermediate protective layer; therefore; the influence of the distortion of organic buffer layer directly is not communicated to barrier layer for gases; thereby, can prevent in defectives such as barrier layer for gases generation cracks.Especially, defectives such as crack taking place easily on the barrier layer for gases of the pattern end face periphery that covers organic buffer layer, therefore, by dispose intermediate protective layer on this zone, can prevent to take place defective generations such as crack on barrier layer for gases.

In addition; by making described intermediate protective layer cover the outer regions of described organic buffer layer at least; because defectives such as crack take place on the barrier layer for gases of the end face periphery of the pattern of covering organic buffer layer easily; therefore; by at this area configurations intermediate protective layer, can prevent effectively that on barrier layer for gases defective such as crack takes place.

In addition, by disposing described intermediate protective layer, can prevent effectively that moisture from entering organic buffer layer near the end face of the pattern of organic buffer layer to extend the pattern and the mode on every side thereof that cover described organic buffer layer.

In addition, by having the electrode protecting layer that covers described the 2nd electrode, can prevent the corrosion or the breakage of the 2nd electrode when manufacturing process.

In addition, by disposing described barrier layer for gases, can protect intermediate protective layer and organic buffer layer to avoid the influence of the moisture of outside with the pattern of the described intermediate protective layer of extension covering and the mode on every side of described intermediate protective layer.

In addition, by having the protective layer that covers described barrier layer for gases, can the protective gas barrier layer avoid influence from the mechanical shock of outside.

In addition, form below 45 ° by contact angle in the end with described organic buffer layer, relax the influence of the thermal deformation (expanding and contraction) of organic buffer layer, therefore, can be reduced in the possibility that defectives such as crack take place on the barrier layer for gases significantly barrier layer for gases.

For example, as described intermediate protective layer, can form by metal fluoride.Especially, suit to form by lithium fluoride or sodium fluoride.

And then, as described intermediate protective layer, can form by the metal that with aluminium is representative.

In addition, by being that the material of 10～100GPa constitutes by modulus of elasticity, can relax the influence of the distortion of organic buffer layer well with described intermediate protective layer.

In addition, by described organic buffer layer is made of epoxy resin, can form good resilient coating.

A kind of light-emitting device is characterized in that, on matrix, has: a plurality of the 1st electrodes; Next door with a plurality of peristomes corresponding with the formation position of described the 1st electrode; Be disposed at the organic function layer of each described peristome; Cover the 2nd electrode of described next door and described organic function layer; Be formed with the organic buffer layer of smooth upper surface when covering described the 2nd electrode; Cover the 1st barrier layer for gases and the 2nd barrier layer for gases of described organic buffer layer; And intermediate protective layer, it is configured between described the 1st barrier layer for gases and described the 2nd barrier layer for gases, and the described organic buffer layer of modular ratio is big and littler than described barrier layer for gases.

In addition; by disposing described intermediate protective layer in mode corresponding to the outer regions of described organic buffer layer; because defectives such as crack take place on the barrier layer for gases of the end face periphery of the pattern of covering organic buffer layer easily; therefore; by at this area configurations intermediate protective layer, can prevent effectively that on barrier layer for gases defective such as crack takes place.

In addition; by disposing described the 1st barrier layer for gases to extend the pattern and the mode on every side thereof that cover described organic buffer layer; dispose described intermediate protective layer to extend the pattern and the mode on every side thereof that cover described organic buffer layer, can prevent effectively that moisture from entering organic buffer layer from middle protective layer and the 1st barrier layer for gases.

In addition, by disposing described the 2nd barrier layer for gases, can prevent more reliably that moisture from entering organic buffer layer with the pattern of the described intermediate protective layer of extension covering and the mode on every side of described intermediate protective layer.

In addition, dispose described the 1st barrier layer for gases and described the 2nd barrier layer for gases, can prevent reliably that moisture from entering intermediate protective layer by the mode that contacts with peripheral part at described matrix.

A kind of manufacture method of light-emitting device is characterized in that, comprises, on matrix: the operation that forms a plurality of the 1st electrodes; Formation has the operation in the next door of a plurality of peristomes corresponding with the formation position of described the 1st electrode; Formation is disposed at the operation of the organic function layer of each described peristome; Form the operation of the 2nd electrode that covers described next door and described organic function layer; Be formed with the operation of the organic buffer layer of smooth upper surface when form covering described the 2nd electrode; Form the operation of intermediate protective layer, wherein, described intermediate protective layer is, covers the outer regions of described organic buffer layer at least, and simultaneously, the described organic buffer layer of its modular ratio is big and littler than described barrier layer for gases; With the operation that forms the barrier layer for gases that covers described intermediate protective layer and/or described organic buffer layer.

A kind of manufacture method of light-emitting device is characterized in that, comprises, on matrix: the operation that forms a plurality of the 1st electrodes; Formation has the operation in the next door of a plurality of peristomes corresponding with the formation position of described the 1st electrode; Formation is disposed at the operation of the organic function layer of each described peristome; Form the operation of the 2nd electrode that covers described next door and described organic function layer; Be formed with the operation of the organic buffer layer of smooth upper surface when form covering described the 2nd electrode; Form the operation of the 1st barrier layer for gases that covers described organic buffer layer; Form the operation of intermediate protective layer, wherein, described intermediate protective layer is to cover the zone corresponding with the outer regions at least of described organic buffer layer on described the 1st barrier layer for gases, simultaneously, the described organic buffer layer of its modular ratio is big and littler than described the 1st barrier layer for gases; Form the operation of described the 2nd barrier layer for gases that covers described intermediate protective layer and/or described the 1st barrier layer for gases.

Dispose described organic buffer layer by the silk screen print method under the reduced atmosphere, can discharge moisture, can prevent sneaking into of bubble in addition from organic buffer layer.

Electronic equipment has above-mentioned light-emitting device.According to this invention as can be known,, therefore, suppress the deterioration of organic buffer layer because moisture almost can not enter organic function layer, thereby, can access electronic equipment with long-life display part.

Description of drawings

Fig. 1 is the figure of Wiring construction of the EL display unit 1 of expression the 1st execution mode of the present invention.

Fig. 2 is the schematic diagram of the formation of expression EL display unit 2.

Fig. 3 is the cutaway view along the A among Fig. 2-B line.

Fig. 4 is the cutaway view along the C among Fig. 2-D line.

Fig. 5 is the enlarged drawing of the end (outer regions) of expression organic buffer layer 210.

Fig. 6 is the figure that represents the manufacture method of EL display unit 1 by process sequence.

Fig. 7 is presentation graphs 6 figure of ensuing operation afterwards.

Fig. 8 is the figure that represents silk screen print method by process sequence.

Fig. 9 is the cutaway view of the variation of expression EL display unit 1.

Figure 10 is the enlarged drawing of the end (outer regions) of expression organic buffer layer 210.

Figure 11 is the schematic diagram of profile construction of the EL display unit 2 of expression the 2nd execution mode of the present invention.

Figure 12 is the enlarged drawing of the end (outer regions) of expression organic buffer layer 210.

Figure 13 is illustrated in the figure that whether imappropriate situation takes place under the situation that intermediate protective layer 212 is set.

Figure 14 is the cutaway view of the variation of expression intermediate protective layer 212.

Figure 15 is the cutaway view of the variation of expression intermediate protective layer 212.

Figure 16 is the figure of the electronic equipment of expression embodiments of the present invention.

Among the figure; 1; 2-EL device (light-emitting device); 23-pixel electrode (the 1st electrode); 30-barrier layer for gases; 31-the 1 barrier layer for gases; 32-the 2 barrier layer for gases; 50-negative electrode (the 2nd electrode); 55-cathodic protection layer (electrode protecting layer); 60-luminescent layer (organic function layer); 200-matrix; 210-organic buffer layer; 212-intermediate protective layer; 221-organic next door layer (next door); 221a-peristome; 1000-mobile phone (electronic equipment); 1100-table (electronic equipment); 1200-information processor (electronic equipment); 1300-slim big frame TV (electronic equipment); 1001; 1101; 1206,1306-display part (light-emitting device).

Embodiment

Below, describe with reference to the manufacture method and the electronic equipment of drawing light-emitting device of the present invention, light-emitting device.Also have,, the EL display unit of an example organic field luminescence (Electro Luminesence:EL) material that used organic functional material is described as light-emitting device.

(the 1st execution mode)

EL display unit 1 is to have used the EL display unit of the active array type of thin-film transistor (Thin FilmTransistor is designated hereinafter simply as TFT) as switch element.

Also have, in the following description,, be made as each engineer's scale inequality in order to discern each position or each tunic that constitutes EL display unit 1.

In the EL display unit (light-emitting device) 1, as shown in Figure 1, a plurality of scan lines 101 and with the upwardly extending a plurality of holding wires 102 in the side of each scan line 101 square crossing and a plurality of power lines 103 of extending side by side with each holding wire, carried out distribution respectively, simultaneously, near each intersection point of scan line 101 and holding wire 102, be provided with pixel region X.

Holding wire 102 is connected with the data line drive circuit 100 with shift register, level shifter, video line and analog switch.In addition, scan line 101 is connected with the scan line drive circuit 80 with shift register and level shifter.

And then, X goes up separately at pixel region, be respectively arranged with make sweep signal is fed into grid via scan line 101 switch with TFT112, keep via this switch with TFT112 from holding wire 102 supply with the picture element signal that comes maintenance electric capacity 113, will supply to grid by this picture element signal that keeps electric capacity 113 to keep driving with TFT123, when being connected electrically in power line 103 with TFT123 via this driving drive current from the pixel electrode (the 1st electrode) 23 of these power line 103 inflows and be clipped in this pixel electrode 23 and negative electrode (the 2nd electrode) 50 between functional layer 110.By pixel electrode 23 and negative electrode 50 and functional layer 110, constitute light-emitting component (organic EL).

According to this EL display unit 1 as can be known, if scan line 101 is driven and switch becomes open mode with TFT112, then the current potential of holding wire 102 is held electric capacity 113 maintenances at this moment, and keeps the state of electric capacity 113 according to this, determines to drive the closed condition of opening with TFT123.Also have, electric current flows to pixel electrode 23 via the raceway groove (channe1) that drives with TFT123 from power line 103, electric current and then flow to negative electrode 50 via functional layer 110.Functional layer 110 is luminous according to the magnitude of current that flows through them.

Secondly, with reference to Fig. 2～Fig. 5 the concrete formation of EL display unit 1 is described.

The EL display unit is an active array type, has on constituting: have as illustrated in fig. 2 electrical insulating property substrate 20, will be connected switch with the pixel electrode of TFT (not shown) with rectangular be configured on the substrate 20 pixel electrode area (not shown) that constitutes, be configured in pixel electrode area around in to be connected the power line (not shown) of each pixel electrode and to be arranged at least on the pixel electrode area be the pixel portions 3 (the chain-dotted line frame of Fig. 2) of essentially rectangular when overlooking observation.

Also have, in the present invention, substrate 20 and formation described later switch thereon are referred to as matrix 200 (with reference to Fig. 3, Fig. 4) with TFT or various circuit and interlayer dielectric etc.

Pixel portions 3 is divided into the actual displayed zone 4 (in the two dot-dash wire frames among Fig. 2) of middle body and is configured in the virtual region 5 (zones between a chain-dotted line and two chain-dotted lines) on every side in actual displayed zone 4.

On actual displayed zone 4, viewing area R, G, the B that has pixel electrode respectively separated on A-B direction and C-D direction respectively and be configured to rectangular.

In addition, the both sides in the Fig. 2 in actual displayed zone 4 dispose scan line drive circuit 80.These scan line drive circuits 80 are configured in the downside of virtual region 5.

And then the upside in the Fig. 2 in actual displayed zone 4 disposes proof scheme 90.This proof scheme 90 is circuit of the running status of checking EL display unit 1, for example, have will the checking result to the authorization information output mechanism (not shown) of outside output, can be on constituting to manufacture process or quality, the defective of the display unit when dispatching from the factory verify.Also have, this proof scheme 90 also is configured in the downside of virtual region 5.

Scan line drive circuit 80 and proof scheme 90 apply via driving voltage conducting portion 310 (with reference to Fig. 3) and driving power conducting portion 340 (with reference to Fig. 4) for the power supply unit of its driving voltage from regulation on constituting.In addition, from master driver of the regulation of the operation of controlling this EL display unit 1 etc., via drive control signal conducting portion 320 (with reference to Fig. 3) and driving voltage conducting portion 350 (with reference to Fig. 4), to the transmission drive control signal of these scan line drive circuits 80 and proof scheme 90 and apply driving voltage.Also have, so-called drive control signal in this case is meant the command signal from master driver etc., and the control the during signal of this command signal and output scanning line drive circuit 80 and proof scheme 90 is relevant.

In addition; EL display unit 1, as shown in Figure 3, Figure 4, on matrix 200; form a plurality of light-emitting components (organic EL), and then cover them and be formed with organic buffer layer 210, intermediate protective layer 212, barrier layer for gases 30 etc. with pixel electrode 23, luminescent layer 60 and negative electrode 50.

Also have, as luminescent layer 60, representative is luminescent layer (electroluminescent layer), has the carrier injection layer or the carrier transport layer of hole injection layer, hole transporting layer, electron injecting layer, electron supplying layer etc.And then, also can have the hole and stop (Hole blocking) layer, electronic stopping layer.

As the substrate 20 that constitutes matrix 200, under the situation of the EL of so-called electroluminescent type display unit, be that to take out from the phase subtend of this substrate 20 be the formation of the light that sends of barrier layer for gases 30 sides, therefore, can use any one in transparency carrier and the nontransparent substrate.As nontransparent substrate, implemented insulation processing such as surface oxidation, for example, sheet metals such as pottery such as aluminium oxide, stainless steel can also be enumerated thermosetting resin or thermoplastic resin, and then enumerate its film (plastic film) etc.

In addition, under the situation of so-called bottom-emission (Bottom Emission) type EL display unit, be the formation of taking out the light that sends from substrate 20 sides, therefore,, adopt transparent or semitransparent thing as substrate 20.For example can enumerate glass, quartz, resin (plastics, plastic film) etc., the especially suitable glass substrate that uses.Also have, in the present embodiment, be set as top light emitting (Top Emission) type of the light that taking-up sends from barrier layer for gases 30 sides, thereby, as substrate 20, use above-mentioned nontransparent substrate, for example, nontransparent plastic film etc.

In addition, on substrate 20, be formed with to comprise and be used to drive the circuit part 11 of the driving of pixel electrode 23, be provided with a plurality of light-emitting components (organic EL) thereon with TFT123 etc.Light-emitting component forms as the pixel electrode 23 of anode performance function in turn, injects/transport the hole transporting layer 70 from the hole of this pixel electrode 23, the luminescent layer 60 with organic EL Material and negative electrode 50 and constitute.

On the basis of such formation, light-emitting component is by on this luminescent layer 60, from hole transporting layer 70 injected holes and from the electronics of negative electrode 50 in conjunction with and luminous.

Because pixel electrode 23 be top emission type in the present embodiment, therefore, do not need transparent, thereby, get final product by suitable electric conducting material formation pixel electrode 23.

Formation material as hole transporting layer 70 for example can use, polythiophene (Polythiophene) derivative, polypyrrole derivative etc. or their adulterate body.Specifically, the dispersion liquid of 3,4-polyethylene dioxythiophene/polyvinyl sulfonic acid (PEDOT/PSS), that is, 3,4-polyethylene dioxythiophene is dispersed in polyvinyl sulfonic acid as decentralized medium, and then can use this is dispersed in dispersion liquid in the water etc., form hole transporting layer 70.

Material as forming luminescent layer 60 can use the known luminescent material that can send fluorescence or phosphorescence.Specifically, suitable (gathering) fluorenes (Fluorene) derivative (PF), (gathering) phenylenevinylene's derivative (PPV), the polyphenyl derivative (PP), poly-of using to benzene derivative (PPP), Polyvinyl carbazole (PVK), polythiofuran derivative, polymethyl-benzene base silane polysilanes such as (PMPS) (Polysilane) class etc.

In addition, these macromolecular materials can use perillene (Perillene) class pigment, cumarin (Coumarin) class pigment, if low molecular material such as the macromolecule class material such as Dan Ming (Rhodamine) class pigment or the rubrene (Rubrene) that also can mix, perillene, 9,10-dibenzanthracene, four benzene butadiene, Nile red (Nile Red), coumarin 6, quinoline a word used for translation ketone and using.

Also have, the above-mentioned macromolecular material that also can replace uses known in the past low molecular material.

In addition, also can on such luminescent layer 60, form electron injecting layer as required.

In addition, hole transporting layer 70 and luminescent layer 60 in the so-called present embodiment, as shown in Figure 3, Figure 4, be configured on the matrix 200 by forming cancellate lyophily key-course 25 (not shown) and organic next door layer (next door) 221 surrounds, and thus the besieged hole transporting layer 70 of institute and luminescent layer 60 as the element layer of the single light-emitting component (organic EL) of formations.

Also have, each wall of the peristome 221a of organic next door layer 221 and the surperficial angulation of matrix 200 are that 100 degree are above below 170 degree.Why being made as such angle, is for when forming luminescent layer 60 by wet process (Wet Process), is easy to be configured in the peristome 221a.

Negative electrode 50, as Fig. 2～shown in Figure 4, has the big area of the gross area than actual displayed zone 4 and virtual region 5, can cover them respectively, therefore, with cover luminescent layer send out 60 and the state top, that in addition cover the wall of the outside portion that forms organic next door layer 221 of organic next door layer 221 be formed on the matrix 200.Also have, negative electrode 50 is connected with distribution 202 with the negative electrode of the peripheral part that is formed on matrix 200 in the outside of organic next door layer 221 as illustrated in fig. 4.This negative electrode is connected with flexible substrate 203 with distribution 202, and thus, negative electrode 50 is connected with not shown drive IC (drive circuit) on the flexible substrate 203 via negative electrode usefulness distribution 202.

As the material that forms negative electrode 50, owing to be top emission type in the present embodiment, therefore, need light transmission, thereby, use transparent conductive material.As transparent conductive material, ITO (IndiumTin Oxide: indium tin oxide) for suitable, in addition, for example can also use the Zinc-oxide-based armorphous nesa coating of indium oxide (Indium Zinc Oxide:IZO/ アイゼ Star トオ-(registered trade mark)) etc.Also have, use ITO in the present embodiment.

In addition, negative electrode 50, the suitable electronics that uses injects the big material of effect, for example, calcium or magnesium, sodium, lithium metal or these metallic compounds.As metallic compound, what meet is organic coordination compounds such as metal oxide, calcium acetylacetonate such as metal fluoride such as calcirm-fluoride or sodium oxide molybdena.In addition, because these materials only, resistance is just big, can not bring into play function as electrode, therefore, can make the non-pixel region on aluminium or the metal level next doors such as gold, silver, copper form pattern, perhaps also can make up transparent metal conductive oxide layer such as ITO, tin oxide and laminated body and use.Also have, in the present embodiment, the laminated body of lithium fluoride and magnesium-silver alloy, ITO is adjusted into can obtains transparent thickness use.

In the upper layer part of negative electrode 50, as shown in Figure 3, Figure 4, be formed with cathodic protection layer (electrode protecting layer) 55.Negative electrode 50 corrosion or damage this cathodic protection layer 55 is set when preventing that when forming organic buffer layer 210 organic solvent or residual moisture cause manufacturing process.

Cathodic protection layer 55 is for the consideration of the transparency, compactness, resistance to water, gas barrier property, and preferably, the silicon-oxygen nitride by densification and high resiliency ratio etc. contains inorganic compounds such as metallic compound such as the silicon compound of nitrogen or titanium oxide and forms.As the modulus of elasticity of the material that forms cathodic protection layer 55, preferably, more than the 100GPa.

In addition, as the formation method of cathodic protection layer 55, can use high density film forming methods such as ECR sputtering method or ion plating.Also have, the thickness of cathodic protection layer 55 in order to prevent to produce the crack, preferably, below the 200nm, especially preferredly is 30～100nm.

Also have, cathodic protection layer 55 is formed the thickness of 30nm to about the 100nm, make it mode covered cathode with the insulating barrier 284 of the peripheral part of contact matrix 200.

In the upper layer part of cathodic protection layer 55,, organic buffer layer 210 is set to have than the also wide scope of organic next door layer 221 and the state of covered cathode 50 as Fig. 2～shown in Figure 4.Also have, organic buffer layer 210 can cover the negative electrode 50 that is formed on the pixel portions 3, and the negative electrode that also can and then cover the peripheral part that is formed on matrix 200 is with the negative electrode 50 on the distribution 202, and any situation all can.

Organic buffer layer 210 is configured to the jog that the energy landfill forms concavo-convex negative electrode 50 owing to the influence of the shape of organic next door layer 221, and then, form the general planar face above it.Organic buffer layer 210 has the stress that buffering matrix 200 perks or volumetric expansion cause, and prevents the function that negative electrode 50 is stripped from astatically from organic next door layer 221.In addition, therefore organic buffer layer 210 top by general planarization, be formed on the barrier layer for gases 30 that the tunicle by hard of organic buffer layer 210 constitutes and also be flattened, so the position that stress is concentrated does not exist, and thus, prevents to produce the crack on the barrier layer for gases 30.

As organic buffer layer 210 presclerotic raw material main components, form for printing under reduced vacuum, should be and have superior flowability, and there is not solvent composition, and all be the organic compound material that constitutes the macromolecular scaffold raw material, preferably, using the molecular weight with epoxy radicals is epoxy monomer/oligomer (definition of monomer: molecular weight is below 1000, the definition of oligomer: molecular weight is 1000～3000) below 3000.For example, be bisphenol type epoxy oligomer or Bisphenol F type epoxy oligomer, phenolic epoxy oligomer, polyethyleneglycol diglycidylether, alkyl diglycidyl ether, 3,4-epoxide ring hexenyl methyl-3 ＇, 4 ＇-epoxide ring hexene carboxylate, ε-modification caprolactone, 3,4-epoxycyclohexyl methyl-3 ＇, 4 ＇-epoxycyclohexane carboxylate etc. can a plurality of alone or in combination these uses.

In addition, as with the curing agent of epoxy monomer/oligomer reaction, can form electrical insulating property or cementability is superior, and hardness is strong, and toughness is big, and the curing agent of the sclerosis tunicle of superior for heat resistance is good, the transparency is superior, and the inhomogeneous not serious addition polymers type of hardening is good.Preferably, for example, 3-methyl-1,2,3,6-tetrahydrobenzene dicarboxylic acid anhydride, 1,2,4,5-benzene tertacarbonic acid dianhydride, 3,3 ＇, 4,4 ＇-benzophenone tetracarboxylic dianhydride, etc. the anhydrides curing agent.And then, as the reaction initiator of the reaction that promotes acid anhydrides, be easy to sclerosis at low temperatures by adding the alcohols that 1,6-hexylene glycol equimolecular quantity is big and be difficult to volatilize, making.These are hardened in 60～100 ℃ the scope and heat, thereby this sclerosis tunicle becomes the macromolecule with ester bond.

And then, as the hardening accelerator of the open loop that promotes acid anhydrides, can harden at low temperature and in the short time by adding aromatic amine or alcohols amino-phenol equimolecular quantity than higher hardening accelerator, making.

If use to shortening the frequent cation that uses of firm time and emit the photo-induced polymerization initiator of type, then film is colored, or owing to rapid sclerosis is shunk and caused stress to be applied to causing on the luminescent layer 60 peeling off etc., so not preferred, but can add as the light reaction agent of catalyst or improve the moisturizing agent such as silane coupling agent, isocyanate compound of the compactness between negative electrode 50 or the barrier layer for gases 30, the additives such as particulate that shrink when preventing to harden.

Each viscosity of these raw materials, preferably, more than the 1000mPas (room temperature: 25 ℃).Why be also not generate the non-luminous region that is called stain in the luminescent layer 60 because do not infiltrate after the coating.In addition, the viscosity that forms material as the resilient coating that mixes these raw materials is 500～20000mPas, especially preferredly is 2000～10000mPas (room temperature).

In addition, as the thickness of organic buffer layer 210, preferably, 3～10 μ m.If the thickness of organic buffer layer 210 is more than the 3 μ m,, also can prevent the generation of the defective of barrier layer for gases 30 even then sneak under the situation of the following impurity of 1 μ m that the clean room also is difficult to remove.

In addition, as the characteristic after the sclerosis, preferably, the modulus of elasticity of organic buffer layer 210 is 1～10GPa.Why be because when 10GPa is above, the stress in the time of can not absorbing the organic next door of planarization layer 221 top, when 10Gpa was following, mar proof or thermal endurance etc. were not enough.

The formation of organic buffer layer 210 preferably, is used silk screen printing and is coated on the cathodic protection layer 55 under reduced vacuum.Make mask contact matrix 200, press solidly with squeegee, described mask forms pattern with the emulsion hardening thing with non-dispensing area on silk screen, thus, organic buffer layer is formed material be replicated in (on the cathodic protection layer 55) on the matrix 200.Owing in reduced atmosphere, be coated with (duplicating), therefore, when can keep the few environment of moisture, can remove the bubble that when duplicating, produces on the coated face.

Also have,, also can use to have lipophile and low absorbefacient macromolecular material as the material that forms organic buffer layer 210, for example, TPO or polyethers.In addition, also can adopt alkoxy silanes such as hydrolyzing methyl trimethoxy silane or tetraethoxysilane and the polymerizable organosilicon body of condensation.In addition, also can adopt propenyl polyalcohol or the rare polyalcohol of methyl-prop, gather ethyl ester polyalcohol, polytrimethylene ether polyalcohol, polyurethane polyol as main body, with the polymeric derivative of diisocyanate cpd polymerizations such as toluene di-isocyanate(TDI) or xyxylene vulcabond or the polymeric derivative of bisphenols epoxy compounds and polymerizations such as dicarboxylic anhydride compound or amines etc.

And then, comprise the macromolecule of silicon compounds such as silane coupling agent such as 3-TSL 8330 or 3-glycidoxypropyltrime,hoxysilane by use, can improve cementability with the interface of inorganic material such as negative electrode 50 or barrier layer for gases 30.

In addition, under the situation that does not need the transparency such as bottom-emission type as the material that forms organic buffer layer 210, also can select to have used material with the light trigger of reaction such as ultraviolet ray.Especially, by using ultraviolet ray and thermmohardening, when suppressing the sclerosis contraction, enhance productivity by shortening the time of heat hardening thereafter.In this case; what wish is; form cathodic protection layer 55 by ultraviolet absorption material; by will be for example; titanium oxide or zinc oxide, silver-tin oxide band gaps (Enegy Band Gap) such as (ITO) are that the oxide semiconductor material of 2～4eV uses at least a portion at the cathodic protection layer; absorb the ultraviolet ray that has seen through organic buffer layer 210 by cathodic protection layer 55, thus, prevent to be radiated at the harmful effect of the ultraviolet ray of organic buffer layer 210 luminescent layer 60.In addition, the additives such as particulate that shrink that prevent to harden are sneaked into also harmless.

And then, in the upper layer part of organic buffer layer 210,, be formed with intermediate protective layer 212 as Fig. 2～shown in Figure 4.

As intermediate protective layer 212, modular ratio barrier layer for gases 30 is little, and is bigger than organic buffer layer 210.Specifically, can suit to use modulus of elasticity is 10～100Gpa (1～10 (* 10 ¹⁰Nm ^-2)) material.

Preferably, for example, compare little metal of nitride or oxide modulus of elasticity or fluorinated compound etc.Especially can use LiF, MgF ₂(modulus of elasticity is 15～68GPa), Mg (modulus of elasticity is 41GPa), Zn (modulus of elasticity is 43GPa), Al (modulus of elasticity is 69GPa), Ag (modulus of elasticity is 76GPa), SiO Deng alkali halide ₂(modulus of elasticity is 94GPa),

(modulus of elasticity is 50GPa), (modulus of elasticity is Sn

) etc. inorganic material.

Also have-modulus of elasticity of organic buffer layer 210 be below the 10GPc for example, modulus of elasticity is under the situation that forms organic buffer layer 210 by epoxy resin

In addition, the modulus of elasticity of barrier layer for gases 30 is

For example.Under the situation that forms barrier layer for gases 30 by silicon nitride, silicon oxynitride modulus of elasticity be 200～400GPa (20～400 ( ).

Also have, the material as forming intermediate protective layer 212 is not limited to metal, also can be resin.In this case, preferably, in resin, add particulate 213 such as (comprising) filler and regulate modulus of elasticity (with reference to Fig. 5).By making it to contain particulate 213, make when forming tunicle or be difficult to take place change in volume during variations in temperature, thereby, and then can reduce burden to barrier layer for gases 30.Also have, as particulate 213, preferably, high-molecular organic material or inorganic oxide material, for example, polyester or PMMA (polymethyl acrylate), silicon dioxide or aluminium oxide.

In addition, as the material that forms intermediate protective layer 212, preferably, adopt the material that organic buffer layer 210 and barrier layer for gases 30 is kept good close property.

Also have, preferably, make intermediate protective layer 212 cover the outer regions of organic buffer layer 210 at least, and then be formed into the zone in the outside of organic buffer layer 210.Why be because the flat site of organic buffer layer 210 when making the light that sends from luminescent layer 60 be difficult to see through, covers this regional barrier layer for gases 30 and is difficult to take place crack etc.That is, intermediate protective layer 212 has opening at the flat site of organic buffer layer 210, and forms the outer regions that can only cover organic buffer layer 210.In a word, at lower floor's configuration intermediate protective layer 212 of the outer regions of the barrier layer for gases 30 that crack etc. takes place easily.

And then, in the upper layer part of intermediate protective layer 212,, be formed with barrier layer for gases 30 as Fig. 2～shown in Figure 4.

Barrier layer for gases 30 is used for anti-block or moisture enters, and therefore, can suppress oxygen or moisture thus and cause negative electrode 50 or luminescent layer 60 deteriorations etc.

In addition, barrier layer for gases 30 is made of for example inorganic compound, therefore, preferably, by silicon compound, especially formation such as nitrogenous silicon nitride that resistance to water is superior or silicon-oxygen nitride.And then, in order to cover gas such as steam, needing fine and close and flawless tunicle, it is good that the high-density plasma that use can form fine and close film at low temperatures becomes embrane method to form.Also have, except silicon compound, also can be for for example, aluminum oxide or tantalum oxide, titanium oxide and then be formations such as other potteries.

The modulus of elasticity of barrier layer for gases 30 is more than the 100GPa, specifically, preferably, about 200～250Pa.

And then, as barrier layer for gases 30, can be stromatolithic structure, also its composition can be set as inhomogeneously, especially, be set as the formation of the continuous or discontinuous variation of its oxygen concentration.

In addition, as the thickness of such barrier layer for gases 30, preferably, more than the 30nm, below the 1000nm.Especially, the thickness of barrier layer for gases 30, preferably, about 200～600nm.

Why be because, if less than 30nm, then exist the inhomogeneous etc. of the defective of film or thickness to cause the trouble that forms through hole and damage gas barrier property in the part, if surpass 1000nm, then have the trouble of opening by the stress guide fracturing.

In addition, same problem as can be known, the total film thickness of intermediate protective layer 212 and barrier layer for gases 30, preferably, below the 1000nm.

In addition,, therefore, need barrier layer for gases 30 to have light transmission owing to be top emission type in the present embodiment, thereby, in the present embodiment,, the light penetration in visible light zone is made as for example more than 80% by suitable its material of adjusting or thickness.

At this, the structure of the end (outer regions) of organic buffer layer 210 is described with reference to Fig. 5.Fig. 5 is the enlarged drawing of the end (outer regions) of expression organic buffer layer 210.

Organic buffer layer 210 constitutes formation on cathodic protection layer 55, contacts with the surface of cathodic protection layer 55 with contact angle α in its end.At this, contact angle α is below 45 °, more preferably, and about 1 °～20 °.By such formation organic buffer layer 210, form being formed on the intermediate protective layer 212 on upper strata of this organic buffer layer 210 or barrier layer for gases 30 shape according to organic buffer layer 210.Thus, the end of barrier layer for gases 30 does not have rapid change of shape, and therefore the shape smooth variation, can prevent that stress from concentrating and the generation of the defective in the crack that causes etc.

Especially, barrier layer for gases 30 is formed on the organic buffer layer 210 of end (outer regions) of organic buffer layer 210 via intermediate protective layer 212.That is, intermediate protective layer 212 is configured to the zone that also relies on the outside than element resilient coating 210, and then barrier layer for gases 30 is configured to the zone that intermediate protective layer 212 also relies on the outside.Like this, by being that barrier layer for gases 30 is configured on the organic buffer layer 210 with intermediate protective layer 212, can prevent more effectively that barrier layer for gases 30 upper stresses from concentrating and the generation of the defectives such as crack that cause.In addition, by barrier layer for gases 30 being configured to the zone in the outside of intermediate protective layer 212, can prevent intermediate protective layer 212 contact wettings or oxygen etc. and deterioration.Thereby, can keep sealability for a long time.

Return Fig. 3, Fig. 4,, be provided with the protective layer 204 on blanket gas barrier layer 30 in the upper layer part of barrier layer for gases 30.This protective layer 204 is made of adhesive linkage that is arranged on barrier layer for gases 30 sides (resin bonding layer) 205 and surface protection substrate (protective substrate) 206.

Adhesive linkage 205 is fixed with surface protection substrate 206 on barrier layer for gases 30, and the mechanical shock from the outside is had pooling feature, and protection luminescent layer 60 or barrier layer for gases 30.By surface protection substrate 206 being bonded in this adhesive linkage 205, form protective layer 204.Adhesive linkage 205 is by for example, ammonia ester class, resins such as third rare class, epoxies, TPO, that is, by specific surface protective substrate 206 also the bonding agent that constitutes of softness and the low material of glass transition temperature form.In addition, preferably, transparent resin material.In addition, also can form adhesive linkage for the material of 2 kinds of liquid mixed types having added curing agent by hardening at low temperatures.

Also have, preferably, in such adhesive linkage 205, add silane coupling agent or alkoxy silane.If do like this, the adaptation between then formed adhesive linkage 205 and the barrier layer for gases 30 becomes better, thereby, big to the function change of mechanical shock buffering.

In addition, especially down in the situation that forms barrier layer for gases 30 by silicon compound etc., can by silane coupling agent or alkoxy silane improve and this barrier layer for gases 30 between adaptation, thereby, can improve the gas barrier property of barrier layer for gases 30.

Surface protection substrate 206 is arranged on the adhesive linkage 205, and constitutes the face side of protective layer 204, and therefore, tool is to have resistance to pressure or mar proof, exterior light to prevent at least one in the functions such as reflectivity, gas barrier property, ultraviolet-shielding type and the layer that constitutes.

The material of surface protection substrate 206 can adopt glass, DLC (as the carbon (Diamondlike Carbon) of diamond) layer, transparent plastic, overlay.At this,, for example can adopt PET, third rare (acryl), Merlon, polyolefin etc. as plastic material.

And then, also can on this surface protection substrate 206, ultraviolet screener/absorbed layer be set or light prevents optical configurations such as reflector, exothermic layer, lens, look wavelength conversion layer or mirror.In addition, also color filter functionality can be set.

Also have, in the EL of this example display unit, under the situation of top emission type, need surface protection substrate 206, adhesive linkage 205 together be made as and have light transmission, but do not need in that the situation that is made as the bottom-emission type is next.

Secondly, with reference to Fig. 6 and Fig. 7 an example of the manufacture method of the EL display unit 1 of present embodiment is described.Each cutaway view of Figure 6 and Figure 7 is the figure of the cutaway view of the A-B line in the corresponding diagram 2.

Also having, is top emission type as the EL display unit 1 of light-emitting device in the present embodiment, identical with in the past situation for the operation in the circuit forming surface portion 11 of substrate 20 in addition, the Therefore, omited explanation.

At first, shown in Fig. 6 (a), form the conducting film that constitutes pixel electrode 23, make it to cover whole of substrate 20 that the surface is formed with circuit part 11, and then, also can be by with this nesa coating transparence, when forming pixel electrode 23 with drain electrode 244 conductings, form the dummy pattern 26 of virtual region via the nipple orifice 23a of the 2nd interlayer insulating film 284.

Also have, in Fig. 3 and Fig. 4, these pixel electrodes 23, dummy pattern 26 are referred to as pixel electrode 23.Dummy pattern 26 is made as the formation that is not connected the metal wiring of lower floor via the 2nd interlayer insulating film 284.That is, dummy pattern 26 is configured to island, has and the roughly the same shape of shape that is formed on the pixel electrode 23 in actual displayed zone.Certainly, also can for the shape structure inequality of the pixel electrode 23 that is formed on the actual displayed zone.Also have, in this case, dummy pattern 26 also comprises the formation of the top that is positioned at driving voltage conducting portion 310 (340) at least.

Secondly, shown in Fig. 6 (b), on pixel electrode 23, the dummy pattern 26 and to form dielectric film on the 2nd interlayer dielectric be lyophily key-course 25.Also have, in pixel electrode 23, form schematic key-course 25, make the hole to begin to move from the pixel electrode 23 of peristome 25a (equally with reference to Fig. 3) in the mode of local opening.On the contrary, in the dummy pattern 25 that peristome 25a is not set, insulating barrier (lyophily key-course) 25 constitutes holes and moves shielding layer and the hole does not take place move.Then, on lyophily key-course 25, form illustrated BM (black matrix (Black Matrix)) in formed concavity portion between 2 pixel electrodes 23 inequality.Specifically, use crome metal and pass through sputtering film-forming.

Also have, shown in Fig. 6 (c), form organic next door layer 221, make it to cover the assigned position of lyophily key-course 25, specifically, cover above-mentioned BM.As the concrete method that forms organic next door layer; will be for example, the solution that diaphragms such as acrylic acid resin, poly-imide resin are dissolved in the solvent applies various rubbing method coating formation such as (Spin Coat) method, dip-coating (Dip Coat) method organic material layer by rotation.Also have, the constituent material of organic material layer, so long as be not dissolved in pattern solvent described later, and get final product by easy patterns that forms such as etchings.

And then, by photolithography (Photolithography) technology, etching technique organic material layer is formed pattern, and form peristome 221a at organic material layer, thus, form organic next door layer 221 at peristome 221a with wall.At this, below wall and matrix 200 angulations that form peristome 221a are formed that 110 degree are above and spend to 170.

Also have, in this case, organic next door layer 221 comprises the formation of the top that is positioned at drive control signal conducting portion 320 at least.

Secondly, on the surface of organic next door layer 221, form the zone of expression lyophily and the zone of expression lyophobicity.In the present embodiment, form each zone by plasma processing.Specifically, plasma processing is by preheating operation, ink-receptive aquation operation, ink-resistant aquation operation and refrigerating work procedure, described ink-receptive aquation operation has lyophily with the wall of the top and peristome 221a of organic next door layer 221 and the electrode surface 23c of pixel electrode 23, top the making respectively of lyophily key-course 25, and described ink-resistant aquation operation is made the wall top and peristome 221a of organic next door layer 221 has lyophobicity.

Secondly, form operation by hole transporting layer and form hole transporting layer 70.Form in the operation at this hole transporting layer, by for example, the drop of ink-jet method etc. shoots out method or spin coating method etc. hole shrinkage layer material is coated on the electrode surface 23c, afterwards, carry out dried and heat treatment, and hole transporting layer 70 is formed on the electrode 23.

Secondly, form operation by luminescent layer and form luminescent layer 60.Form in the operation at this luminescent layer, by for example ink-jet method luminescent layer is formed material and shoot out on hole transporting layer 70, afterwards, carry out dried and heat treatment, thus, in the peristome 221a that is formed at organic next door layer 221, form luminescent layer 60.Form in the operation at this luminescent layer, use the solvent that forms material at luminescent layer as preventing dissolving once more of hole transporting layer 70, use the non-polar solven that is not dissolved in hole transporting layer 70.

Secondly, shown in Fig. 7 (a), form operation by cathode layer and form negative electrode 50.Form in the operation at this cathode layer, ITO is carried out film forming and is made as negative electrode 50 by physical vapor flop-in methods such as for example ion platings.At this moment, this negative electrode 50 naturally form cover luminescent layer 60 and organic next door layer 221 above, also cover the state of the wall of the outside portion that forms organic next door layer 221.

Secondly, on negative electrode 50, form the cathodic protection layer 55 that constitutes by silicon compound.As the method that forms this cathodic protection layer 55, preferably, use physical vapor flop-in methods such as ion plating.

Secondly, shown in Fig. 7 (b), organic buffer layer 210 by liquid phase method, be that the wet type operation forms.

Method as forming organic buffer layer 210 can adopt methods such as ink-jet method, slot coated (SlitCoat) method, curtain formula curtain coating, silk screen print method, toppan printing.In addition, these are coated with atmosphere, preferably, are coated with under the reduced atmosphere of 100～1000Pa scope, make not cause taking place the film defective because of bubble.

In addition, have flatness and pattern formation property simultaneously in order to make organic buffer layer 210, the viscosity during coating, preferably, 100～10000mPas.Can suitably use retarder thinner, but preferably, also be not easy volatilization under reduced atmosphere, sclerosis is back and principal component is crosslinked and producing high-molecular.

And then, by the combination of materials ink-jet method of above-mentioned viscosity, silk screen print method, toppan printing etc. are formed pattern, can dwindle the end of pattern of organic buffer layer 210 and the contact angle α between the cathodic protection layer 55.

The thickness purpose of organic buffer layer is to relax because of planarization and the concavo-convex stress that produces, therefore, need be set as thicker than the height in next door layer or pixel next door, preferably, for example, about 2～10 μ m.The preferred non-existent situation of stress also can but produce traction stresses a little.Film density is little and than porousness film, 0.8～1.8g/cm for reducing polarity stress preferred elastomeric modulus ³For good.

The drying of coating behind the organic buffer layer 210 be in order to remove the remaining moisture in the striping fully, under reduced pressure or under the dry nitrogen atmosphere to carry out drying under 50～80 ℃ the hardening temperature.Obtain flowability not only by heating or sclerosis, and by viscosity is descended for the moment, improve the flatness on surface, it is big that the tapering around the pattern becomes, thereby, obtain the purpose shape.That is,, cathodic protection layer 55 and contact angle α can be made as 1～20 degree in the pattern end of organic buffer layer 210.For preventing moisture absorption thereafter, preferably, do not return in the atmospheric pressure, and transfer in the formation operation of ensuing intermediate protective layer 212.

At this, the step of organic buffer layer 210 being carried out silk screen printing under reduced atmosphere is elaborated.

Silk screen print method is the method that can be coated with under reduced atmosphere, therefore, be one relatively be good at using in to the mode of full-bodied coating fluid.Especially, silk screen print method has the following advantages, that is: to control coating easy owing to the pressurization of squeegee is moved, and owing to uses silk screen to have uniform film thickness and pattern formation property is superior.

At first, shown in Fig. 8 A, the matrix 200 that is formed into cathodic protection floor 55 is moved into substrate transferring chamber (not shown) the 1st, after indoor and printing office (not shown) reduces pressure the pressure of regulation with the 1st substrate transferring, matrix 200 is moved in the printing office.

Also have, shown in Fig. 8 B, with silk screen 551 aligned positions.At this,, be formed with and coat the not lyophobicity emulsion layer of hardened substance 551n of the part of coating material at the non-coated face of silk screen 551.

Also have, the pattern form of silk screen 551 is the result that mould forms, and described mould forms the surrounding edge portion of organic buffer layer 210 shape (for example, wave-like) of regulation.

Secondly, behind matrix 200 aligned positions, remain on the platform (Stage).As the method that matrix 200 is remained on the platform, for example can use the vacuum suction method.

Also have, shown in Fig. 8 C, adjust operation as the 1st pressure, with the cushioning layer material titration before on the silk screen 551, the pressure in the printing office is adjusted to 10～1000Pa.

Secondly, shown in Fig. 8 D, presclerotic cushioning layer material K is passed through the end (emulsion hardening material 551n) of branch's nozzle titration ormal weights such as (Dispenser Nozzle) at silk screen 551.

Cushioning layer material K uses the material of epoxy monomer/oligomeric materials mixed hardening agent, reaction initiator as implied abovely.These materials mix before coating and use, but as mixed viscosity, the range of viscosities of 500～20000mPas is good under room temperature (25 ℃).Under than the also low situation of this viscosity, liquid drops down or spills on the emulsion hardening thing layer 551n from silk screen 551, and thickness stability or pattern form the property variation.In addition, under than the also high situation of this viscosity, the flatness variation causes residual silk screen trace, in addition, because when breaking away from silk screen, it is big that the bubble that is involved in becomes, therefore, stays crateriform coating easily and omits also easy residual bubble after the froth breaking operation.

And then, as the viscosity of cushioning layer material K, especially preferredly be the scope of 2000～10000mPas.Also little by reducing ratio of viscosities 10000mPas, can and then control the residual of bubble.In addition, also bigger by being made as than 1000mPas, make in silk screen printing, to be difficult to play the relieving stagnant Qi bubble in the operation to also have, be difficult to take place crateriform defective.Thus, can access uniform film.In addition, as described later, can reliably suppress stain and produce.Thereby, be set at as above by viscosity at ambient temperature material, can reliably keep the shape of resilient coating, planarized surface, atomic little gasification bubble, the low-angleization of side end can suppress stain and produce.

In addition, the thickness of organic buffer layer 210 need be set as also thicker than the height of organic next door layer 221 (2～5 μ m), can cushion the stress that produces because of concavo-convex, as mentioned above, preferred 3～10 μ m.These viscosity and film thickness monitoring exert an influence to the formation of contact angle, thereby, extremely important for realizing below 30 °.The preferred non-existent situation of stress also can but produce tensile stress a little.The porous membrane that the film density preferred density is lower, as mentioned above, 1～10GPa is good.

Secondly, shown in Fig. 8 E, on silk screen 551, with squeegee (Squeegee) 553 from one side sidesway to another avris, when being diffused in cushioning layer material K on the silk screen 551, be pressed on the matrix 200 copying pattern.Also have, when being disposed at silk screen 551 on the matrix 200, silk screen 551 can contact matrix 200 fully, also can keep 1mm between left and right every.After keeping under the situation at interval, being pressed into material, silk screen 551 also contacts via material basically with matrix 200, thereby, constitute the silk screen printing of the way of contact.Thereby, the stripping process of needs silk screen described later.

In addition, at this moment, because cushioning layer material K is coated with simultaneously by rolling, therefore, bubble is sneaked in the material.Thereby, shown in Fig. 8 F, regulate operation as the 2nd pressure, the pressure in the printing office is adjusted on the basis of 2000～5000Pa and keeps official hour, and remove bubble.That is, be the pressure that 10～1000Pa increases to 2000～5000Pa, from the 1st time adjusting pressure by in printing office, entering nitrogen.Because this bubble is bubbles of vacuum, therefore, can breaks and eliminate bubble by increasing pressure.

Secondly, shown in Fig. 8 G, peel off silk screen 551 from matrix 200.At this moment, not shown, but for example, at an avris of matrix 200,, and platform is left from silk screen 551 if squeegee 553 is pressed in reduction platform under the state on the platform, then the institute of platform 553 is constituted fulcrum by the pressure place, and silk screen begins to peel off from the limit of opposition side.In fact, in when action of peeling off carrying out silk screen 551, especially it is desirable for the pressure in the printing office is adjusted to 3000～4000Pa.Its reason is that matrix 200 is drawn by silk screen 551 when peeling off, send from platform and to peel matrix 200 energetically, but this moment, if the pressure in the printing office is more than 3000～4000Pa, then, can successfully carry out peeling off of silk screen 551 because of vacuum suction reliably is adsorbed on matrix 200 on the platform.

Afterwards, shown in Fig. 8 H, continue to reduce platform, leave fully from matrix 200 at silk screen 551 and finish to peel off.

Secondly, shown in Fig. 8 I, after the matrix 200 of the printing of the cushioning layer material K that will be through with is moved into substrate transferring chamber the 2nd, shown in Fig. 8 J, matrix 200 is being remained under the indoor state of the 2nd substrate transferring, be set as under the atmospheric prerequisite the 2nd substrate transferring is indoor as regulating pressure for the 3rd time, keep the stipulated time, remove bubble.That is, by to the indoor nitrogen that enters of the 2nd substrate transferring, with the indoor atmospheric pressure that is made as of the 2nd substrate transferring, and with the atmosphere around the substrate from regulate for the 2nd time pressure promptly 2000～5000Pa increase to atmospheric pressure.

Secondly, shown in Fig. 8 K, after matrix 200 is moved into heating chamber from substrate transferring chamber the 2nd, under nitrogen atmosphere, the heat treated under cushioning layer material K implemented 60～100 ℃.Thus, cushioning layer material K sclerosis.Epoxy monomer/oligomeric materials by implementing such hardening process, make to be contained in presclerotic cushioning layer material K and curing agent, reaction initiator reaction, epoxy monomer/oligomer is three-dimensional cross-linked, thereby, form polymeric epoxy resin.

In addition, by implementing heat treated, such hardening phenomenon takes place not only, and mitigations that become of the shape of the side end of cushioning layer material K, the angle at edge becomes (with reference to Fig. 5) below 20 °, at last, becomes the shape of organic buffer layer 210.

Return Fig. 7 (b), cover the outer regions (or whole face) of organic buffer layer 210, form intermediate protective layer 212.As the method that forms intermediate protective layer 212, preferably, the physical vapor flop-in method (PVD) of vacuum vapour deposition or sputtering method etc.

Especially, as the material that forms intermediate protective layer 212, under the situation of using aluminium, lithium fluoride or sodium fluoride gasification easily under lower temperature, and the stable material of chemical property, exist raw material cheaply and be convenient to mass-produced advantage.

Secondly, shown in Fig. 7 (c), cover intermediate protective layer 212, form barrier layer for gases 30.Barrier layer for gases 30, preferably, the main clear films that constitutes by silicon nitride that becomes embrane method etc. to form by the high-density plasma under reducing pressure or silicon-oxygen nitride.In addition, preferably, make it to have compactness for shielding micromolecular steam fully, and have some compression stresses.Preferred film density is 2.3/cm ³More than, the thickness of thickness and inorganic resilient coating, preferably, below the 1000nm, 50～500nm the best.

Concrete grammar as forming intermediate protective layer 212 and barrier layer for gases 30 at first carries out film forming by physical vapor flop-in methods such as sputtering method or ion platings, secondly, also can carry out film forming by chemical vapor deposition methods such as plasma CVD methods.By physical vapor flop-in methods such as sputtering method or ion platings; can obtain general heterogeneous substrate surface is also showed the film of better close property, therefore, be used to form the formation of intermediate protective layer 212 and barrier layer for gases 30; on the other hand; in the chemical vapor deposition method, it is few to obtain having stress, and step coverage is superior; defective is few; therefore the membranous film that compactness is good, is used for barrier layer for gases 30.These methods can be considered the property produced in batches and suitably select.

In addition, after forming intermediate protective layer 212, do not return under the prerequisite under the air atmosphere, in vacuum atmosphere, form barrier layer for gases 30 continuously.In addition, barrier layer for gases 30 and intermediate protective layer 212 also can change over the also continuous variation film forming gaseous species of diaphragm area by the switching mask in identical process chamber or mixing ratio is carried out film forming.If film forming then can make barrier layer for gases 30 and intermediate protective layer 212 under the prerequisite that does not have the interface like this, form inequality membranous of constituting atom kind or ratio of components, modulus of elasticity.Thus, can form the film of the function of the function that has both barrier layer for gases 30 and intermediate protective layer 212.

In addition, for the formation of barrier layer for gases 30, can form individual layer by above-mentioned identical materials, also can form by a plurality of layers of material laminate inequality, and then, when can also form individual layer, form it and form continuous or discontinuous variation on film thickness direction.

Secondly, on barrier layer for gases 30, the protective layer 204 (with reference to Fig. 3 and Fig. 4) that is made of adhesive linkage 205 and surface protection substrate 206 is set.By silk screen print method or slot coated method etc. adhesive linkage 205 roughly is uniformly coated on the barrier layer for gases 30, and adhesive surface protective substrate 206 thereon.

If protective layer 204 is set on barrier layer for gases 30 like this; then because surface protection substrate 206 has functions such as resistance to pressure or mar proof, preventing property of light reflection, barrier layer for gases, ultraviolet-shielding type; can be by these surface backside substrate 206 protection luminescent layer 60 or negative electrodes 50; all right protective gas barrier layer; thereby, can realize the long lifetime of cladding element.

In addition, 205 pairs of mechanical shock performances of adhesive linkage pooling feature, therefore, apply from the outside under the situation of mechanical shock, can cushion mechanical shock to barrier layer for gases 30 or its inboard light-emitting component, thereby, can prevent to cause the function deterioration of cladding element because of this mechanical shock.

As mentioned above, form EL display unit 1.

Fig. 9, Figure 10 are the figure of the variation of expression EL display unit 1.

As shown in Figure 9, also barrier layer for gases 30 can be set as the 1st barrier layer for gases 31 and more than 32 layers of the 2nd barrier layer for gases, and between the layer of the 1st and the 2nd barrier layer for gases 31,32, dispose intermediate protective layer 212.That is, also can clamp intermediate protective layer 212 by barrier layer for gases 30.

In this case, shown in Figure 10 (a), intermediate protective layer 212 is touched on the cathodic protection layer 55 of matrix 200.Shown in Figure 10 (b), also can discontiguous prerequisite under, blanket gas barrier layer 30 (the 1st barrier layer for gases the 31, the 2nd barrier layer for gases 32) fully.No matter select which kind of situation, all, isolate, prevent the deterioration of intermediate protective layer 212 with moisture or oxygen by intermediate protective layer 212 is not exposed.

Also have, organic buffer layer 210 contacts the surface of cathodic protection layer 55 with contact angle α in its end.At this, contact angle α is below 45 °, more preferably, and about 1 °～20 °.

By such formation organic buffer layer 210, be formed on the intermediate protective layer 212 on upper strata of this organic buffer layer 210 or barrier layer for gases 30 and form by the shape of organic buffer layer 210.Thus, the end of barrier layer for gases 30 does not have rapid change of shape, and shape gently changes, and therefore, can prevent that stress from concentrating and cause defective such as crack to take place.

Especially,, barrier layer for gases 30 is configured on the organic buffer layer 210, therefore, can more effectively prevents to concentrate and the defectives such as crack of generation in barrier layer for gases 30 stress via intermediate protective layer 212 in the end that is easy to generate most the crack (outer regions).

(the 2nd execution mode)

Below, the EL display unit 2 of the 2nd execution mode of the present invention is described.Also have, in the present embodiment, to the formation identical with the 1st execution mode, additional identical symbol omits explanation.

Figure 11 is the schematic sectional view of analysing and observe structure of the EL display unit 2 of expression the 2nd execution mode of the present invention.Figure 12 is the enlarged drawing of end (outer regions) of the organic buffer layer 210 of expression EL display unit 2.

EL display unit 2 is adopting the white luminous layer 60W that sends white light as luminescent layer, and adopts on filter substrate 207 this point inequality with the El display unit 1 of the 1st execution mode as the surface protection substrate.

As the white organic light emitting material, use styrene amine luminescent material, anthracene class colour coupler (cyan) or styrene amine luminescent material, red glimmering rare (Rubrene) class colour coupler (yellow).

Also have, preferably, on lower floor or the upper strata of white luminous layer 60W, (Alq3) layer (electron supplying layer), LiF (electronics injection resilient coating) carry out film forming with triarylamine (ATP) polymer hole injection layer, TDP (triphenyldiamine) class hole transporting layer, quinoline aluminium alcoholates (aluminumquinolinol).

In addition,, do not need luminescent layer 60 is distinguished by R, G, B, therefore, white luminous layer 60W is formed on each pixel electrode 23, make it across organic next door layer 221 as the EL display unit 1 of the 1st execution mode.

Also have, also can be on organic next door layer 221 configuration auxiliary electrode 64.Auxiliary electrode 64 has the resistance value also lower than negative electrode 50, by being electrically connected with the position midway of negative electrode 50, prevents to descend because of high negative electrode 50 voltages of resistance value.

In addition, filter substrate 207 is formed with red colored layer 208R, green coloring layer 208G, cyan dyed layer 208B and black matrix 209 on base main body 207A.Also have, the formation face of dyed

layer

208R, 208G, 208B and black matrix 209 is relative to the configuration with matrix 200 via 205.Also have, the material of base main body 207A can adopt the identical material of the surface protection substrate 206 of the 1st execution mode.

In addition, dyed

layer

208R, 208G, 208B respectively with pixel electrode 23 on white luminous layer 60W be relative to the configuration.Thus, make the light transmission dyed

layer

208R, 208G, the 208B that send of white luminous layer 60W, thereby, incide observer's side as red light, green light, each coloured light of cyan light.

Like this, in EL display unit 2, utilize the light that sends of white luminous layer 60W, and carry out the color demonstration by color filter substrate 207 with dyed layer 208.

In addition, the distance between

dyed layer

208R, 208G, 208B and the white luminous layer 60W should be set as short distance as far as possible, and the light that white luminous layer 60W sent only is transmitted into the dyed layer of subtend with it.This is because under the situation of this distance, and the light that white luminous layer 60W sends is transmitted into it that the possibility of the dyed layer of adjacency uprises, and in order to suppress this possibility, preferably, reduces this distance.

Specifically, preferably, the interval till will be from the surface of insulating barrier 284 to color filter substrate 207 is made as about 15 μ m.Thus, the light that white luminous layer 60W sends only is transmitted into the dyed layer of subtend with it, and the light that can suppress to be sent drains to the situation of the dyed layer of adjacency with it.

In addition, owing to used monochromatic white luminous layer 60W, therefore, need not to form luminescent layer and separate by each R, G, B.Specifically, in the drop of the mask evaporation operation of the white luminous layer that forms low branchs subclass or formation macromolecule off-white color luminescent layer shoots out operation etc., forming a kind of white luminous layer by 1 operation gets final product, therefore, compare the situation that forms luminescent layer and separate by each R, G, B, it is easy that manufacturing process becomes.In addition, it is inconsistent to suppress life-span of each luminescent layer 60.

In addition, in EL display unit 2, as shown in figure 12, between organic buffer layer 210 and barrier layer for gases 30, dispose intermediate protective layer 212.

Also have, the organic buffer layer 210 that is formed on the cathodic protection layer 55 contacts with the surface of protective layer 55 with contact angle α in its end.At this, contact angle α is below 45 °, more preferably, about 1 °～20 ° below.

Thus, the barrier layer for gases 30 that is formed on the upper strata of organic buffer layer 210 does not have rapid change of shape in its end, and changes shape gently, therefore, prevents that stress from concentrating and cause defective such as crack to take place.Thereby, can keep sealability for a long time.

In addition, the contact angle β that is configured in the end of the planarization insulating film 294 on layer dielectric film 292 is below 45 °, and the shape that is formed on the cathodic protection layer 55 on the planarization insulating film 294 forms smooth variation.

Thus, the cathodic protection layer 55 that is formed on the upper strata of planarization insulating film 294 prevents that stress from concentrating and defectives such as crack take place.

(embodiment)

Secondly, whether between organic buffer layer 210 and barrier layer for gases 30, having not properly when intermediate protective layer 212 is set, situation describes.

Figure 13 is illustrated in whether the properly figure of situation takes place when being provided with intermediate protective layer 212 not.

Specifically, will form EL display unit 1, the 2 process thermal cycling tests and the high humility test of intermediate protective layer 212, observe the end (outer regions) whether moisture corrodes barrier layer for gases 30 by various materials.

Also have; formation as EL display unit 1,2; the thickness of pixel electrode 23 is 100nm; the thickness of white luminous layer 60W is 150nm; the thickness of negative electrode 50 is 15nm, and the cathodic protection layer 55 that is made of SiON is 100nm, and the thickness of organic buffer layer 210 is 5 μ m; the thickness of the barrier layer for gases 30 that is made of SiON is 400nm, and the thickness of protective layer 204 is 100 μ m.

In addition, the condition of thermal cycling test is-40 ℃ of following 30 minutes/85 ℃ 300 circulations of following 30 minutes, and high humidity is 85 ℃ of following 85%RH500 hours.

As shown in figure 13, as intermediate protective layer 212, using alkali halide such as LiF or MgF or Mg, Zn, Al, Ag, SiO ₂Do not find under the situation etc. inorganic material that moisture corrodes the end (outer regions) of barrier layer for gases 30.Any one also all is 10～100GPa for the modulus of elasticity of these materials.

On the other hand, under the situation that intermediate protective layer 212 is not set, or, use Ti, Pt, MgO, Si as intermediate protective layer 212 ₃N ₄, Al ₂O ₃Under the situation etc. inorganic material, find that moisture corrodes the end (outer regions) of barrier layer for gases 30.Any one all is more than the 100GPa for the modulus of elasticity of these materials.

Like this; between organic buffer layer 210 and barrier layer for gases 30; intermediate protective layer 212 is set; thus; even organic buffer layer 210 thermal deformations (expanding and contraction); the distortion of organic buffer layer 210 does not directly exert an influence to barrier layer for gases 30, and can prevent to produce crack etc. at barrier layer for gases 30.Especially, be easy to generate defectives such as crack, therefore,, can effectively prevent in defectives such as barrier layer for gases 30 generation cracks by at this area configurations intermediate protective layer 212 in the end of barrier layer for gases 30 (outer regions).

Also have, in the execution mode of above-mentioned EL display unit 1,2, top emission type is illustrated for example, but the invention is not restricted to this, go for the bottom-emission type, in addition, also go for to the radiative type in both sides.

Under the situation of bottom-emission type, at the middle section of intermediate protective layer 212 opening is set, as Figure 14 and shown in Figure 15, also can cover whole of organic buffer layer 210.

Also have, under the situation that intermediate protective layer 212 is formed by lithium fluoride, layer becomes transparent, therefore, even cover whole of organic buffer layer 210, also can be suitable for bottom-emission type and top emission type.

In addition, in the bottom-emission type or under the situation of the radiative type in both sides, preferably, with the switch that is formed on matrix 200 with TFT112 or drive with TFT123 be not located at light-emitting component under, and be formed on lyophily key-course 25 and organic next door layer 221 under, thereby, improve aperture opening ratio.

In addition, in EL display unit 1,2, the 1st electrode is brought into play function as anode, the 2nd electrode is brought into play function as negative electrode, but also can turn them around formation: the 1st electrode as negative electrode, and is brought into play function with the 2nd electrode respectively as anode.But, in this case, the formation position of luminescent layer 60 and hole transporting layer 70 need be transferred and come.

In addition, in the present embodiment, represented EL display unit 1,2 is useful in the example of light-emitting device, but the invention is not restricted to this, as long as the 2nd electrode is arranged on the outside of matrix basically, with regard to no matter the light-emitting device of which kind of mode can be suitable for.

Also have,, for example can use nano impress (Nanoindentation) method as the method for the modulus of elasticity of the organic buffer layer 210 of measuring EL display unit 1,2, intermediate protective layer 212, barrier layer for gases 30 etc.

Pressing in sample when the nano impress method is the High Accuracy Control pressure head, and by resolving the method for mechanical properties such as load-displacement curve quantitative assay hardness or modulus of elasticity.Especially, the film sample of measuring difficulty can be measured in the past, in addition,, Determination of Modulus can be suited to use in intermediate protective layer 212 grades because of easy and have high reproducibility.

Secondly, electronic equipment of the present invention is described.

Electronic equipment has above-mentioned EL display unit 1,2 as display part, specifically can enumerate the thing shown in Figure 16.

Figure 16 (a) is the stereogram that mobile phone is represented as an example.In Figure 16 (a), mobile phone 1000 has the display part 1001 that has used above-mentioned EL display unit 1.

Figure 16 (b) represents the Wristwatch-type electronic equipment as an example stereogram.In Figure 16 (b), table 1100 has the display part 1101 that has used above-mentioned EL display unit 1.

Figure 16 (c) is the stereogram that portable information processing devices such as word processor, computer are represented as an example.In Figure 16 (c), information processor 1200 has input part 1202, the display part 1206 that has used above-mentioned EL display unit 1, information processor main bodys (basket) 1204 such as keyboard.

Figure 16 (d) is the stereogram that slim big frame TV is represented as an example.In Figure 16 (d), slim big frame TV 1300 have slim big frame TV main body (basket) 1302, loud speaker etc. audio output unit 1304, used the display part 1306 of above-mentioned EL display unit 1.

Like this, be illustrated respectively in Figure 16 (a)～(d) electronic equipment and have: have the

display part

1001,1101,1206,1306 of above-mentioned EL display unit 1,2, therefore, realize the long lifetime of display part.

In addition, the slim big frame TV 1300 shown in Figure 16 (d) has been suitable for the present invention that can irrespectively seal display part with area, therefore, has the display part 1306 of comparing big in the past area (for example, the diagonal angle is more than 20 inches).

In addition, being not limited to situation that EL display unit 1,2 is had as display part, also can be the electronic equipment that has as illuminating part.For example, the page printer (image processing system) that also EL display unit 1,2 can be had as photohead (line head, line head).

Claims

1. a light-emitting device is characterized in that,

On matrix, have:

A plurality of the 1st electrodes;

Next door with a plurality of peristomes corresponding with the formation position of described the 1st electrode;

Be disposed at the organic function layer of each described peristome;

Cover the 2nd electrode of described next door and described organic function layer;

Cover the organic buffer layer of described the 2nd electrode;

Cover the barrier layer for gases of described organic buffer layer; With

Intermediate protective layer, it is configured between described organic buffer layer and the barrier layer for gases, and the described organic buffer layer of modular ratio is big and littler than described barrier layer for gases.

2. light-emitting device according to claim 1 is characterized in that,

Described intermediate protective layer covers the outer regions of described organic buffer layer at least.

3. light-emitting device according to claim 1 and 2 is characterized in that,

Described intermediate protective layer is extended configuration with the pattern that covers described organic buffer layer and mode on every side thereof.

4. light-emitting device according to claim 1 and 2 is characterized in that,

Have the electrode protecting layer that covers described the 2nd electrode, described organic buffer layer covers described electrode protecting layer.

5. light-emitting device according to claim 1 and 2 is characterized in that,

Described barrier layer for gases is extended configuration with the pattern that covers described intermediate protective layer and mode on every side thereof.

6. light-emitting device according to claim 1 and 2 is characterized in that,

Has the protective layer that covers described barrier layer for gases.

7. light-emitting device according to claim 1 and 2 is characterized in that,

The contact angle in the end of described organic buffer layer forms below 45 °.

8. light-emitting device according to claim 1 and 2 is characterized in that,

Described intermediate protective layer is made of metal fluoride.

9. light-emitting device according to claim 8 is characterized in that,

Described metal fluoride is lithium fluoride or sodium fluoride.

10. light-emitting device according to claim 1 and 2 is characterized in that,

Described intermediate protective layer is made of aluminium.

11. light-emitting device according to claim 1 and 2 is characterized in that,

Described intermediate protective layer is that the material of 10～100GPa constitutes by modulus of elasticity.

12. light-emitting device according to claim 1 and 2 is characterized in that,

Described organic buffer layer is made of epoxy resin.

13. a light-emitting device is characterized in that,

On matrix, have:

A plurality of the 1st electrodes;

Be disposed at the organic function layer of each described peristome;

Be formed with the organic buffer layer of smooth upper surface when covering described the 2nd electrode;

Cover the 1st barrier layer for gases and the 2nd barrier layer for gases of described organic buffer layer; With

Intermediate protective layer, it is configured between described the 1st barrier layer for gases and described the 2nd barrier layer for gases, and the described organic buffer layer of modular ratio is big and littler than described barrier layer for gases.

14. light-emitting device according to claim 13 is characterized in that,

Dispose described intermediate protective layer in the mode corresponding with the outer regions of described organic buffer layer.

15. according to claim 13 or 14 described light-emitting devices, it is characterized in that,

Described the 1st barrier layer for gases is extended configuration with the pattern that covers described organic buffer layer and mode on every side thereof, and described intermediate protective layer is extended configuration with the pattern that covers described organic buffer layer and mode on every side thereof.

16. according to claim 13 or 14 described light-emitting devices, it is characterized in that,

Described the 2nd barrier layer for gases is extended configuration with the pattern that covers described intermediate protective layer and mode on every side thereof.

17. according to claim 13 or 14 described light-emitting devices, it is characterized in that,

Described the 1st barrier layer for gases is to be configured in the mode that the peripheral part at described matrix contacts with described the 2nd barrier layer for gases.

18. according to claim 13 or 14 described light-emitting devices, it is characterized in that,

19. according to claim 13 or 14 described light-emitting devices, it is characterized in that,

Described intermediate protective layer is made of metal fluoride.

20. light-emitting device according to claim 19 is characterized in that,

Described metal fluoride is lithium fluoride or sodium fluoride.

21. according to claim 13 or 14 described light-emitting devices, it is characterized in that,

Described intermediate protective layer is made of aluminium.

22. according to claim 13 or 14 described light-emitting devices, it is characterized in that,

23. according to claim 13 or 14 described light-emitting devices, it is characterized in that,

Described organic buffer layer is made of epoxy resin.

24. the manufacture method of a light-emitting device is characterized in that, comprising:

On matrix,

Form the operation of a plurality of the 1st electrodes;

Formation has the operation in the next door of a plurality of peristomes corresponding with the formation position of described the 1st electrode;

Formation is disposed at the operation of the organic function layer of each described peristome;

Form the operation of the 2nd electrode that covers described next door and described organic function layer;

Be formed with the operation of the organic buffer layer of smooth upper surface when form covering described the 2nd electrode;

Form the operation of the intermediate protective layer of the outer regions that covers described organic buffer layer at least;

Form the operation of the barrier layer for gases that covers described intermediate protective layer or described intermediate protective layer and described organic buffer layer,

Wherein, the described organic buffer layer of the modular ratio of described intermediate protective layer is big and littler than described barrier layer for gases.

25. the manufacture method of a light-emitting device is characterized in that, comprising:

On matrix,

Form the operation of a plurality of the 1st electrodes;

Form the operation of the 1st barrier layer for gases that covers described organic buffer layer;

Form the operation of intermediate protective layer, wherein, described intermediate protective layer is to cover the zone corresponding with the outer regions at least of described organic buffer layer on described the 1st barrier layer for gases, simultaneously, the described organic buffer layer of its modular ratio is big and littler than described the 1st barrier layer for gases;

Form the operation of described the 2nd barrier layer for gases that covers described intermediate protective layer or described intermediate protective layer and described the 1st barrier layer for gases.

26. the manufacture method according to claim 24 or 25 described light-emitting devices is characterized in that,

27. the manufacture method according to claim 24 or 25 described light-emitting devices is characterized in that,

Described organic buffer layer is made of epoxy resin.

28. the manufacture method according to claim 24 or 25 described light-emitting devices is characterized in that,

Utilize the silk screen print method under the reduced atmosphere to dispose described organic buffer layer.

29. an electronic equipment is characterized in that,

Have according to claim 1 any one described light-emitting device to the claim 23.