CN100521291C - Manufacturing method of self-luminous panel - Google Patents
Manufacturing method of self-luminous panel Download PDFInfo
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- CN100521291C CN100521291C CNB2005101321833A CN200510132183A CN100521291C CN 100521291 C CN100521291 C CN 100521291C CN B2005101321833 A CNB2005101321833 A CN B2005101321833A CN 200510132183 A CN200510132183 A CN 200510132183A CN 100521291 C CN100521291 C CN 100521291C
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The invention provides a method for manufacturing a self-luminous panel, can simplify a process by the use of a solid sealing material and prevent generation of foam between the sealing material and a sealing base material. The manufacturing method includes a first sticking process of sticking a support substrate (104) supporting a spontaneous light emitting element (103) equipped with a light-emitting layer pinched between a pair of electrodes opposed to each other and a sheet-shaped sealing material (106) so as to seal the light-emitting element, a second sticking process of sticking the support substrate (104) stuck with the sealing material (106) to the sealing base material (105) in a decompressed state through the sealing material (106), and an integrating process of integrating the support substrate 104 and the sealing base material (105) stuck together through the sealing material.
Description
Technical field
The present invention relates to the manufacture method of self-emission panel.
Background technology
In the past, existing following self-emission panel, this self-emission panel has: self-emission device has pair of electrodes facing and is clamped in luminescent layer between this pair of electrodes; Support the supporting substrate of self-emission device; By luminescent layer and the opposed sealing substrate of supporting substrate; And encapsulant, be set between supporting substrate and the sealing substrate with the self-emission device sealing, and under the state that is filled between supporting substrate and the sealing substrate, make supporting substrate and sealing substrate bonding.
As the sealing of this kind self-emission panel, the encapsulating method of the encapsulant of use thin plate (film) shape with the self-emission device sealing for example arranged.In the sealing method,, after being bonded in laminal encapsulant on the supporting substrate, make the supporting substrate and being bonded into one of sealing substrate that are bonded with encapsulant for the self-emission device sealing.In addition, also can make the sealing substrate and the supporting substrate that are bonded with encapsulant bonding.
By in the sealing of self-emission device, using the encapsulant of thin plate (film) shape, with use liquid resin with the Sealing Method of luminescent layer sealing (for example, with reference to patent documentation 1.) situation compare, operation is simplified.In the Sealing Method of the encapsulant that uses this thin plate (film) shape, use the encapsulant that for example forms by thermosetting resin, by heating sealing material, make self-emission device and sealing substrate integrated by encapsulant.
[patent documentation 1] spy opens the 2002-216950 communique
Yet, seal under the situation of self-emission device at the encapsulant that uses thin plate (film) shape, can list following problem as an example, that is: because encapsulant is the solid that keeps lamellar or the solid shape that film like is such, thereby have when concavo-convex when the adhesive surface of encapsulant or supporting substrate, between bonding encapsulant and supporting substrate, can produce bubble.
And, can list following problem as an example, that is: when when integrated, it being heated for encapsulant is solidified, form the solvent and the gasifications such as water or reaction generation gas that contain in the material of encapsulant, between encapsulant and supporting substrate or self-emission device, produce bubble.With encapsulant stick on the sealing substrate situation too, existing residually between encapsulant and supporting substrate has a such problem of bubble.And the solvent after the above-mentioned gasification, water, reaction generation gas etc. may become the deterioration factor of self-emission device etc.
And, can list following problem as an example, that is: when producing this bubble between encapsulant and self-emission device, contained solvent and moisture brings harmful effect to luminescent layer in the bubble, and the luminescent properties of self-emission panel is descended.Above-mentioned variety of issue takes place too under situation about encapsulant being sticked on the sealing substrate.
Summary of the invention
The manufacture method of the self-emission panel of the 1st aspect of the present invention, this self-emission panel has: supporting substrate; Self-emission device, it has and is formed on pair of electrodes on the supporting substrate, opposed and is clamped in luminescent layer between this pair of electrodes; Sealing substrate, it is mutually opposed with aforementioned supporting substrate by aforementioned self-emission device; And encapsulant, it is set between aforementioned supporting substrate and the aforementioned sealing substrate, with aforementioned self-emission device sealing, it is characterized in that, the manufacture method of this self-emission panel comprises: the 1st bonding process, aforementioned encapsulant and aforementioned supporting substrate is bonding, so that with aforementioned self-emission device sealing; The 2nd bonding process, the supporting substrate and the aforementioned sealing substrate of will be in aforementioned the 1st bonding process under decompression state bonding aforementioned encapsulant are bonding by aforementioned encapsulant; And integrated operation, make aforementioned supporting substrate bonded in aforementioned the 2nd bonding process and aforementioned sealing substrate by aforementioned encapsulant and integrated.
The manufacture method of the self-emission panel of the present invention the 2nd aspect, this self-emission panel has: supporting substrate; Self-emission device, it has and is formed on pair of electrodes on the supporting substrate, opposed and is clamped in luminescent layer between this pair of electrodes; Sealing substrate, it is opposed by aforementioned self-emission device and aforementioned supporting substrate; And encapsulant, it is set between aforementioned supporting substrate and the aforementioned sealing substrate, with aforementioned self-emission device sealing, it is characterized in that, the manufacture method of this self-emission panel comprises: the 1st bonding process, and aforementioned encapsulant and aforementioned sealing substrate is bonding; The 2nd bonding process, the sealing substrate and the aforementioned supporting substrate of will be in aforementioned the 1st bonding process under decompression state bonding aforementioned encapsulant are bonding by aforementioned encapsulant, so that with aforementioned self-emission device sealing; And integrated operation, make aforementioned supporting substrate bonded in aforementioned the 2nd bonding process and aforementioned sealing substrate by aforementioned encapsulant and integrated.
Description of drawings
Fig. 1 is the end view of an example of structure that the self-emission panel of embodiments of the present invention is shown.
Fig. 2-the 1st illustrates the end view of the 1st bonding process of embodiments of the present invention.
Fig. 2-the 2nd illustrates the end view of the 2nd bonding process of embodiments of the present invention.
Fig. 2-the 3rd illustrates the end view of the integrated operation of embodiments of the present invention.
Fig. 3-the 1st, the self-emission device that embodiments of the invention are shown forms the end view of operation.
Fig. 3-the 2nd illustrates the end view of the 1st bonding process of embodiments of the invention.
Fig. 3-the 3rd illustrates the end view of the 2nd bonding process of embodiments of the invention.
Fig. 3-the 4th illustrates the end view of the integrated operation of embodiments of the invention.
Fig. 4 is the process chart of the adoptable a plurality of operations of manufacture method that the self-emission panel of present embodiment is shown.
Fig. 5-the 1st carries out the end view when bonding under the state that sealing substrate is tilted with respect to supporting substrate.
Fig. 5-the 2nd illustrates the end view of the state after making sealing substrate and supporting substrate bonding.
Fig. 5-the 3rd illustrates the end view of another state after making sealing substrate and supporting substrate bonding.
Fig. 6 illustrates the time dependent chart of special component gas flow.
Symbol description
100: self-emission panel; 101: pair of electrodes; 102: luminescent layer; 103: self-emission device; 104: supporting substrate; 105: sealing substrate; 106: encapsulant.
Embodiment
Following with reference to accompanying drawing, the preferred implementation of the manufacture method of self-emission panel of the present invention is elaborated.
(execution mode)
At first, the structure to the self-emission panel of embodiments of the present invention describes.Fig. 1 is the end view of an example of structure that the self-emission panel of embodiments of the present invention is shown.As shown in Figure 1, self-emission panel 100 has: have pair of electrodes 101 (101a, 101b) and self-emission device 103, supporting substrate 104, sealing substrate 105 and the encapsulant 106 of luminescent layer 102.
Self-emission device 103 is made of pair of electrodes facing 101 and the luminescent layer 102 that is clamped in 101 of pair of electrodes.Pair of electrodes 101 and luminescent layer 102 are set on the supporting substrate 104.Pair of electrodes 101 is configured to along the thickness direction of supporting substrate 104 mutually opposed.Therefore, pair of electrodes 101 and luminescent layer 102 support at supported substrate 104 along the thickness direction of supporting substrate 104 and under the stacked state.With the mutually opposed sealing substrate 105 that disposes of self-emission device 103 sides of supporting substrate 104.
Encapsulant 106 is set between supporting substrate 104 and the sealing substrate 105, with self-emission device 103 sealings.For example, using under the situation of organic EL (electroluminescence) element as self-emission device 103, be not subjected to the influence of oxygen or moisture contained in the atmosphere in order to protect self-emission device 103, be necessary with 103 sealings of this self-emission device with isolated from atmosphere.In the present embodiment, by using sealing substrate 105 and encapsulant 106, on whole, carry out bonding, and with self-emission device 103 sealings.
By using the sealed solid material, with using liquid (being difficult to keep the object of shape) Sealing Method of self-emission device 103 sealings is compared, operation is simplified.The encapsulant 106 of present embodiment forms thin plate (film) shape.
Below, the manufacture method of the self-emission panel 100 of embodiments of the present invention is described.Omit diagram, when making self-emission panel 100, at first on supporting substrate 104, formed an electrode 101a in the pair of electrodes 101.On this electrode 101a, form luminescent layer 102, on luminescent layer 102, form another electrode 101b in the pair of electrodes 101, thereby form self-emission device 103.
Fig. 2-the 1st illustrates the end view of the 1st bonding process of embodiments of the present invention.Shown in Fig. 2-1, in the mode of this self-emission device 103 of covering above self-emission device 103, use laminater (laminater) etc. are bonding with the supporting substrate 104 that is formed with self-emission device 103 with encapsulant 106.
Fig. 2-the 2nd illustrates the end view of the 2nd bonding process of embodiments of the present invention.Shown in Fig. 2-2, in the 2nd bonding process, under decompression state, make the supporting substrate 104 of bonding encapsulant 106 in the 1st bonding process and sealing substrate 105 bonding by encapsulant 106.In the 2nd bonding process, supporting substrate 104 and sealing substrate 105 are pressurizeed on the direction that makes their driving fits.And, in the 2nd bonding process, with supporting substrate 104 and sealing substrate 105 be held in make must be bonding mutually face 201,202 parallel and mutually opposed.Then, make opposed 201, supporting substrate 104 and sealing substrate 105 is bonding on the 202 approaching directions.
Fig. 2-the 3rd illustrates the end view of the integrated operation of embodiments of the present invention.Shown in Fig. 2-3, make supporting substrate bonded in the 2nd bonding process 104 and sealing substrate 105 integrated by encapsulant 106.This integrated operation is carried out under decompression state.Here said decompression state is to comprise vacuum state interior 10～10
-6The atmospheric pressure state of Pa scope.Usually, about 10～10
-2The atmospheric pressure state of Pa scope is called negative pressure state, about 10
-2～10
-6The atmospheric pressure state of Pa scope is called vacuum state.And, after the specific gas composition of being discharged from encapsulant 106 is smaller or equal to ormal weight, also can become atmospheric pressure from decompression state.This integrated operation at decompression state, be configured in the atmospheric inert gas or be configured to perhaps under the environment that it is made up successively, carry out in any in the inert gas of decompression state.And, in integrated operation, also can on the direction that makes their driving fits, pressurize to supporting substrate 104 and sealing substrate 105.
Like this, according to above-mentioned manufacture method, in the 2nd bonding process, under vacuum, make the supporting substrate 104 and the sealing substrate 105 that are bonded with encapsulant 106 bonding, thereby can realize the simplification of operation by encapsulant 106.And, can prevent between encapsulant 106 and sealing substrate 105, to produce bubble.Like this, can prevent because the decline of the caused bonding bad or light conduction efficiency of the decline of the bond area of encapsulant 106 and sealing substrate 105.
And,, in the 2nd bonding process,, then can make supporting substrate 104 and sealing substrate 105 by encapsulant 106 driving fit more well if supporting substrate 104 and sealing substrate 105 are pressurizeed on the direction that makes their driving fits according to above-mentioned manufacture method.And, in the 2nd bonding process, supporting substrate 104 and sealing substrate 105 are held in make must be bonding mutually face 201,202 parallel and mutually opposed, make simultaneously on opposed 201,202 approaching directions under the situation that supporting substrate 104 and sealing substrate 105 is bonding, can encapsulant 106 be deformed.Like this, can prevent because encapsulant 106 distortion and produce concavo-convexly on the surface of encapsulant 106 can prevent to produce bubble more reliably between encapsulant 106 and sealing substrate 105.
Particularly under the situation of making large-scale self-emission panel 100, in the method that makes sealing substrate 105 bendings, because sealing substrate 105 is large-scale, thereby the large-scale bonding device of using of needs, yet as mentioned above, according to supporting substrate 104 and sealing substrate 105 parallel bonding manufacture methods, need not make sealing substrate 105 bendings can supporting substrate 104 and sealing substrate 105 is bonding, thereby not need this large-scale bonding device of using.
In addition, make sealing substrate 105 bendings to carry out in the bonding method, under the situation that self-emission panel 100 is maximized, make sealing substrate 105 crooked sealing substrate 105 breakages that just may make own, yet according to above-mentioned manufacture method, because sealing substrate 105 bendings can be carried out, even thereby such large-scale self-emission panel 100 such as large-scale tv machine for example, also can prevent from more reliably between encapsulant 106 and sealing substrate 105, to produce bubble.In addition, as with bonding relevant method, be not limited to supporting substrate 104 and sealing substrate 105 parallel bonding manufacture methods can be used the known various technology that make sealing substrate 105 bendings make the method for self-emission panel 100 that comprise.
As described above such, manufacture method according to the self-emission panel 100 of present embodiment, when under decompression state, carrying out integrated operation, can be with the specific gas composition that from the resin that forms encapsulant 106, produces when the hot curing from drawing to the outside between encapsulant 106 and the supporting substrate 104 or between encapsulant 106 and sealing substrate 105, thereby can prevent from more reliably producing bubble between encapsulant 106 and the supporting substrate 104 or between encapsulant 106 and sealing substrate 105.
And, in integrated operation, after the specific gas composition of discharging from encapsulant 106 is smaller or equal to ormal weight, become under the atmospheric situation, can pass to encapsulant 106 to heat well from decompression state.Promptly, though thermal source is directly contacted with supporting substrate 104 or sealing substrate 105, yet come the gas (air or inert gas) around the self-emission panel 100 is heated by being set to atmospheric pressure, thereby can heated sealant material 106, can heat effectively.And, can prevent to consume energy excessively for heating, can suppress manufacturing cost and rise.
In addition, in the present embodiment, under decompression state, carry out above-mentioned integrated operation, yet be not limited thereto.For example, when in being configured to atmospheric inert gas, carrying out integrated operation, can prevent to be entered by aerobic G﹠W before the sealing fully etc. and make the luminescent properties decline of self-emission device 103 at self-emission device 103.And, in the present embodiment, under decompression state, carry out integrated operation, yet be not limited thereto, for example, when carrying out integrated operation in the inert gas that is being configured to negative pressure state, can be with the specific gas composition that from the resin that forms encapsulant 106, produces when the hot curing from drawing to the outside between encapsulant 106 and the supporting substrate 104 or between encapsulant 106 and sealing substrate 105, thereby can prevent from more reliably producing bubble between encapsulant 106 and the supporting substrate 104 or between encapsulant 106 and sealing substrate 105.
In addition, the invention is not restricted to above-mentioned be bonded in laminal encapsulant 106 on the supporting substrate 104 after the operation of adhesive seal base material 105 again.Also can at first laminal encapsulant 106 be bonded on the sealing substrate 105.That is, also can use following manufacture method to make self-emission panel 100, this manufacture method is characterised in that, comprises: the 1st bonding process is bonded in laminal encapsulant 106 on the sealing substrate 105; The 2nd bonding process, the sealing substrate 105 and the supporting substrate 104 that make encapsulant 106 under decompression state bonding are bonding by encapsulant 106; And integrated operation, make bonded supporting substrate 104 and sealing substrate 105 by encapsulant 106 and integrated.
Like this, in the 1st bonding process, laminal encapsulant is bonded on the sealing substrate, in the 2nd bonding process, under decompression state, make sealing base material and supporting substrate bonding by encapsulant, thereby can realize the simplification of operation by using the sealed solid material, can prevent between encapsulant 106 and supporting substrate and self-emission device 103, to produce bubble simultaneously.Like this, can prevent because the decline of the caused bonding bad and light conduction efficiency of encapsulant 106 and the decline of the bond area of supporting substrate and self-emission device 103.
As discussed above, the manufacture method of self-emission panel 100 according to the embodiment of the present invention by be easy to generate the 2nd bonding process of bubble under decompression state, can realize the simplification by the operation of using the sealed solid material to be brought.And, can prevent from self-emission device 103, to produce bubble.And, can prevent and because the decline that has caused smooth conduction efficiency of bubble bad of each parts with engaging of encapsulant 106.
[embodiment]
(structure of self-emission panel)
Below, the structure of the self-emission panel of embodiments of the invention is described.In addition, because the surface structure of the self-emission panel of embodiments of the invention is identical with above-mentioned self-emission panel shown in Figure 1, thereby omits diagram here, use symbol to describe based on Fig. 1.
At first, the self-emission device 103 that the self-emission panel in the present embodiment 100 is had describes.The self-emission device 103 that self-emission panel 100 in the present embodiment has can list: applies by for example applying the electric field energy that voltage produces, thus EL (the Electro Luminescence: electroluminescence) element etc. that the electric field energy that is applied is emitted with the form of light.EL element has inorganic EL element and organic EL, yet in the present embodiment, illustrates with the example of organic EL as self-emission device 103.
Organic EL also is known as organic EL (OEL) device, Organic Light Emitting Diode (OLED) device and electroluminescence light source sometimes, and describes as organic EL in the present embodiment.Organic EL has organic EL and the use of using macromolecular material to form to hang down the organic EL that molecular material forms.Below, in the present embodiment, as an example, to the example of the organic EL that uses low molecular material to form as self-emission device 103 described.In the present embodiment, the component structure that the luminescent layer 102 by 101 of pair of electrodes 101 and pair of electrodes is constituted calls " organic EL ".
Generally, organic EL has the structure of clamping organic layer between anode (hole injecting electrode) and negative electrode (electron injection electrode).Here the organic layer of indication comprises luminescent layer.In organic EL, by to two electrode application voltage, make from the hole that anode is injected into and is transported in the organic layer to combine again with the electronics (luminescent layer) in organic layer that is injected into and is transported to from negative electrode in the organic layer, obtain this again in conjunction with the time light that produced.At present, because the backgrounds such as development progress of developing material and manufacturing process are used the device of low molecular material to realize commercialization as full-color display at organic layer, and in the present embodiment, are not limit low molecule or macromolecule.
Organic EL adopts a plurality of folded layer by layer structures that will have various functions.As the stepped construction of each layer in the organic EL, generally be to come stacked structure according to " lower electrode (anode)/hole injection layer/hole transporting layer/organic EL luminescent layer/electron supplying layer/electron injecting layer/upper electrode (negative electrode) " such order.In addition, in the present embodiment, utilize electrode 101a to realize lower electrode, utilize electrode 101b to realize upper electrode.
In the organic EL each layer all can be formed by single organic material, also can form (mixed layer) by making multiple material mixing, the functional material of organic class or mineral-type is dispersed in the polymer binder and forms.In addition, as functional material, can enumerate charge transport function, lighting function, electric charge and stop (blocking) function, optical function etc.
In the organic EL each layer can comprise: have and be used for making the pooling feature that luminescent layer 102 is not damaged and be used to prevent layer by the planarization function of the luminescent layer that film-forming process produced 102 concave-convex surfaces of luminescent layer 102 when the upside that uses sputtering method at luminescent layer 102 forms electrode 101b; Be used to protect the protective layer of inoranic membrane organic EL, for example SiN or SiON etc.; And a plurality of layer that constitutes by these layers.
In addition, organic EL also has following various: the electrode of the upside that is positioned at luminescent layer 102 as anode, and handle be positioned at the electrode of downside of luminescent layer 102 as the organic EL of negative electrode; Use the organic EL of a plurality of layers of formation luminescent layer 102; The organic EL (SOLED:Stacked (stacked) OLED) that a plurality of luminescent layers that glow color is different 102 are stacked; Make and do not make the organic EL (multi-photon element) of illustrated charge generation layer between negative electrode and anode; Omit the organic EL of layers such as hole transporting layer or carried out a plurality of stacked organic ELs; The organic EL of the component structure of 1 layer of organic layer (making each functional layer form, eliminate the organic EL on the border of layer continuously) etc. only.In addition, the present invention does not limit the structure of organic EL.
Below, sealing substrate 105 is described.Sealing substrate 105 is mutually opposed with luminescent layer 102 sides of supporting substrate 104 and dispose.Material as forming sealing substrate 105 can use glass baseplate, polyethylene, polypropylene, polyethylene terephthalate (polyethylene terephthalate), polymethyl methacrylate various materials such as metal base such as plastic basis material, aluminium, stainless steel such as (polymethyl methacrylate) such as sodium carbonate glass (soda glass), lead glass, hard glass.The material that forms sealing substrate 105 can suitably be selected suitable material according to the structure of self-emission device 103.
For example, at self-emission device 103 is to send from a side opposite with supporting substrate 104 sides under the situation of organic EL of top light emitting (Top Emission) structure of light, or from supporting substrate 104 sides with and these both sides of opposition side send under the situation of organic EL of TOLED structure of light, the preferred material that uses the high material of the transparency as formation sealing substrate 105, and make that the thickness of sealing base material is the thickness with high-transmission rate.On the contrary, be to send from supporting substrate 104 sides under the situation of organic EL of bottom-emission (Bottom Emission) structure of light for example at self-emission device 103, also can be the metal base of the shortcoming transparency etc. as the material that forms sealing substrate 105.
Below, encapsulant 106 is described.Encapsulant 106 is set between supporting substrate 104 and the sealing substrate 105.Encapsulant 106 forms by making resin-shaped become thin plate (film) shape.Encapsulant 106 preferred surface do not have concavo-convex (perhaps few) and flatness excellence.The encapsulant that has good flatness by use, when encapsulant 106 being bonded on supporting substrate 104 or the sealing substrate 105, can prevent with the closed surface of supporting substrate 104 or sealing substrate 105 driving fits on, between supporting substrate 104 or sealing substrate 105 and encapsulant 106, sneak into bubble.
Preferably the thickness setting with encapsulant 106 becomes to make residual mechanical stress minimum.For example, if residual when forming encapsulant 106 have many internal stresss, then As time goes on, certain part can elongation or is shunk.Under the situation of using this encapsulant 106, encapsulant 106 makes self-emission device (organic EL) 103 be subjected to stress, following variety of issue may take place, that is: make the stacked state collapse of each layer in the self-emission panel 100 owing to encapsulant 106 changes as time passes, perhaps encapsulant 106 descends and the generation poor sealing with the adaptation of supporting substrate 104 or sealing substrate 105.That is,, can avoid such problem by the thickness setting of encapsulant 106 is become to make the minimum thickness of residual mechanical stress.And the other factors of the thickness of decision sealing material also can be to set for to make the water content that for example remains in the sealing material be reduced to few thickness.
As the resin that forms encapsulant 106, can list: for example with polyester acrylate (polyester acrylate), polyether acrylate (polyether acrylate), epoxy acrylate (epoxy acrylate), urethane acrylates (polyurethane acrylate) etc. are various to be the photoionization base polymerism resin of principal component with the acrylate, with epoxy, the resin of vinethene etc. is the cationically photopolymerizable resin of principal component, light-cured resins such as mercaptides (チ オ-Le エ Application) additive type resin, polyethylene, polypropylene, polyethylene terephthalate, polymethyl methacrylate, polystyrene, polyether sulfone (polyethersulphone), polyarylate (polyarylate), Merlon (polycarbonate), polyurethane (polyurethane), acrylic resin, polyacrylonitrile (polyacrylonitrile), Pioloform, polyvinyl acetal (polyvinyl acetal), polyamide, polyimides, two propylene phthalate (diacryl phthalate, the resin of ジ ア Network リ Le Off レ-ト), the cellulose family plastics, polyvinyl acetate, polyvinyl chloride, polyvinylidene chloride etc., the thermoplastic resin of the co-polymer more than 2 kinds or 3 kinds in these etc. or thermosetting resin etc.
Form the resin of encapsulant 106 so long as in the manufacture process of self-emission panel 100, do not produce (perhaps generation seldom) cause the gas of deterioration and can deform because of the passing of environment temperature and time hardly/resin that shrink/expanded etc. changes get final product qualification especially.Yet, from the adaptation and the good aspect of zygosity of supporting substrate 104 and sealing substrate 105, as the resin that forms encapsulant 106, the preferably thermosetting resin that is cured by heating.Below, in the present embodiment, the situation of using the encapsulant 106 that is formed by the thermosetting resin that is cured by heating is described.
(manufacture method of self-emission panel)
Below, an example of the manufacture method of the self-emission panel 100 of embodiments of the invention is described.Fig. 3-the 1st, the self-emission device that embodiments of the invention are shown forms the end view of operation.When making self-emission panel 100, at first carry out on supporting substrate 104, forming the self-emission device formation operation of self-emission device 103.Form in the operation at self-emission device, at first on supporting substrate 104, form electrode 101a, on electrode 101a, stack gradually luminescent layer 102 and electrode 101b.About formation self-emission device 103 on supporting substrate 104, owing to be known technology, thereby omit explanation here.
Fig. 3-the 2nd illustrates the end view of the 1st bonding process of embodiments of the invention.Then, make laminal encapsulant 106 bonding, with the 1st bonding process with self-emission device 103 sealings with the supporting substrate 104 that is formed with self-emission device 103.The face of adhesive seal material 106 is the faces that are formed with self-emission device 103 in supporting substrate 104.The 1st bonding process at decompression state, be configured in the atmospheric inert gas or be configured to carry out under any state in the inert gas of decompression state.In the present embodiment, be under decompression state, to carry out.
Supporting substrate 104 and encapsulant 106 bonding is by supporting substrate 104 and encapsulant 106 are overlapped, and the supporting substrate 104 that overlaps and encapsulant 106 exerted pressure to periphery from the central portion of Width and carries out.At this moment, except pressurization, can also supporting substrate 104 and the encapsulant 106 that overlap be heated.The 1st bonding process for example can use the Japan Patent spy to open the disclosed technology of 2002-361742 communique to carry out, and so long as can prevent the method for sneaking into bubble or foreign matter at the closed surface of supporting substrate 104 and encapsulant 106 and get final product, be not particularly limited in this method.
In the 1st bonding process, to supporting substrate 104 and encapsulant 106 in they direction pressurizations of driving fit separately.For example, in the 1st bonding process, use opposed a pair of roller (roller) 301, make the supporting substrate 104 of coincidence and encapsulant 106 by between this roller 301, thus to supporting substrate 104 and encapsulant 106 in they direction pressurizations of driving fit separately.The 1st bonding process in the present embodiment at decompression state, be configured in the atmospheric inert gas or be configured to carry out the bonding of supporting substrate 104 and encapsulant 106 under any state in the inert gas of decompression state.
Fig. 3-the 3rd illustrates the end view of the 2nd bonding process of embodiments of the invention.The 2nd bonding process that the supporting substrate 104 that then carries out under decompression state encapsulant 106 will be in the 1st bonding process bonding and sealing substrate 105 are bonding.In the present embodiment, under decompression state, carry out the 2nd bonding process.In the 2nd bonding process, supporting substrate 104 and sealing substrate 105 be held in make that bonding mutually face 201,202 is parallel and mutually opposed, simultaneously make opposed 201, supporting substrate 104 and sealing substrate 105 is bonding on the 202 approaching directions.
Supporting substrate 104 in the 2nd bonding process and sealing substrate 105 bonding for example used the Japan Patent spy to open the disclosed technology of 2002-216958 communique to carry out, yet get final product so long as can prevent the method for sneaking into bubble or foreign matter at the closed surface of encapsulant 106 and sealing substrate 105, be not particularly limited in this method.In addition, encapsulant 106 is heated up.Temperature during this intensification is not high to make encapsulant 106 soften to supporting substrate 104 and sealing substrate 105 is realized about the temperature of incorporate degree in appearance by encapsulant 106 to making encapsulant 106 that temperature about hot curings are reacted take place, encapsulant 106 can being warmed up to.
Fig. 3-the 4th illustrates the end view of the integrated operation of embodiments of the invention.Then make supporting substrate bonded in the 2nd bonding process 104 and sealing substrate 105 by encapsulant 106 incorporate integrated operations.
Because the encapsulant 106 of present embodiment is formed by thermosetting resin, thereby when in integrated operation during to encapsulant 106 heating, the resin generation hot curing of formation encapsulant 106 is reacted.Because in this hot curing course of reaction, the thermosetting resin that forms encapsulant 106 solidifies in bonding with supporting substrate 104, self-emission device 103 and sealing substrate 105, thereby makes the supporting substrate 104 and the sealing substrate 105 that are provided with self-emission device 103 integrated by encapsulant 106.By making encapsulant 106 solidify (being hot curing in the present embodiment) like this, can eliminate (or minimizing) encapsulant 106 as time passes and the variation that produces.In the present embodiment, under decompression state, carry out this integrated operation.
The heating means of encapsulant 106 can list following method: by 105 pairs of encapsulants of sealing substrate, 106 heating that contact with heating plate thermals source such as (hotplate), thereby perhaps by to sealing substrate 105 irradiation infrared rays so that sealing substrate 105 heats up that encapsulant 106 is heated, perhaps by using that heater etc. comes encapsulant 106 heated to the indoor heating that carries out integrated operation etc.The heating means of encapsulant 106 are so long as can make it that hot curing reaction take place to encapsulant 106 heating, and can remove the residual volatile ingredient of discharging and get final product from the material that forms encapsulant 106, be not particularly limited in above-mentioned heating means, yet from the most closely to the aspect of encapsulant 106 heating, the method that contacts with thermal source such as heating plate in the preferred said method.
And, in the integrated operation in the present embodiment, after the specific gas composition of discharging from encapsulant 106 is smaller or equal to ormal weight, atmosphere is become atmospheric pressure with inert gas.Here, the specific gas composition is meant in integrated operation because the gas componant of the specified molecular weight of setting in the gas componant that heating is produced when causing the resin generation hot curing reaction (cross-linking reaction) that forms encapsulant 106, according to the kind of the resin that forms encapsulant 106.The gas componant that is produced when thermosetting resin generation hot curing is reacted is different because of the kind of the resin that forms encapsulant 106, however main still gas componant after the gasifications such as employed remaining solvent and moisture when this resin synthetic.As the object lesson of the gas componant that when resin generation hot curing is reacted, is produced, can list analyte of for example methylethylketone (methyl ethyl ketone), toluene, water, resin or additive etc.
And, in integrated operation, to supporting substrate 104 and sealing substrate 105 on the direction that makes their driving fits, pressurize (with reference to Fig. 3-4).At this moment, with the face direction of supporting substrate 104 and sealing substrate 105 vertically, pressurization equably on supporting substrate 104 and sealing substrate 105 whole.Pressing time, force value etc. can suitably be adjusted according to generation degree of bubble etc., are not particularly limited.
Under decompression state, begin integrated operation in the present embodiment, yet be not limited thereto, also can in being configured to atmospheric inert gas or in the inert gas that is configured to reduce pressure, carry out.And, for example in being configured to atmospheric inert gas, under the situation of the integrated operation of beginning, can set decompression state later on at the arrival heat curing temperature.On the other hand, for example in being configured to the inert gas of decompression state, under the situation of the integrated operation of beginning, can also set vacuum state later on for smaller or equal to ormal weight at the specific gas composition.Setting the timing of negative pressure state or vacuum state or time etc. for can suitably adjust according to generation degree of bubble etc., is not particularly limited.
Fig. 4 is the process chart of the adoptable a plurality of operations of manufacture method that the self-emission panel 100 of present embodiment is shown.In the manufacture method of the self-emission panel of present embodiment, can be at decompression state, be configured in the atmospheric inert gas, perhaps be configured to carry out the 1st bonding process under any environment in the inert gas of decompression state.On the other hand, in the manufacture method of the self-emission panel 100 of present embodiment, only under decompression state, carry out the 2nd bonding process.
In the manufacture method of the self-emission panel 100 of present embodiment, at decompression state, be configured in the atmospheric inert gas, perhaps be configured to carry out integrated operation under any environment in the inert gas of decompression state.When under decompression state, carrying out integrated operation, can adopt following 3 kinds of processes, that is: under decompression state, handle to the last situation always, from the way, become the situation of the inert gas atmosphere that is configured to decompression state or become the situation that is configured to atmospheric inert gas atmosphere.On the other hand, when in being configured to atmospheric inert gas, carrying out integrated operation, can adopt these 2 kinds of processes of situation of from the way, setting the situation that the state that atmospheric pressure has been carried out reducing pressure is a negative pressure state for and becoming the vacuum state that has carried out decompression again from this negative pressure state.And, when carrying out integrated operation in the inert gas that is being configured to decompression state, reduce pressure until vacuum state after can adopting, perhaps become the such process of atmospheric inert gas atmosphere that is configured to.
Like this, manufacture method according to the self-emission panel 100 of present embodiment, by the 1st bonding process, make laminal encapsulant 106 and supporting substrate 104 bonding so that with self-emission device 103 sealings, by the 2nd bonding process, the supporting substrate 104 and the sealing substrate 105 that make encapsulant 106 under decompression state bonding are bonding by encapsulant 106, by integrated operation, make supporting substrate bonded in the 2nd bonding process 104 and sealing substrate 105 integrated by encapsulant 106.By using this Sealing Method, can when realizing that operation is simplified, prevent between encapsulant 106 and sealing substrate 105, to produce bubble.Like this, can prevent the descend decline of caused bonding bad and light conduction efficiency of bond area by encapsulant 106 and sealing substrate 105.
And, in the 2nd bonding process, by supporting substrate 104 and encapsulant 106 are pressurizeed on the direction that makes their driving fits, even after encapsulant 106 and sealing substrate 105 are bonding, just between encapsulant 106 and sealing substrate 105, produced under the situation of bubble soon, also can be with this bubble from outwards extruding between encapsulant 106 and the sealing substrate 105.
Fig. 5-the 1st carries out the end view when bonding under the state that sealing substrate is tilted with respect to supporting substrate, Fig. 5-the 2nd illustrates the end view of the state after being bonded in sealing substrate 105 on the supporting substrate.Shown in Fig. 5-1, as making sealing substrate 105, begin gently to carry out under the bonding situation from the end with respect to the state that supporting substrate 104 tilts, when a side direction opposite side is pushed encapsulant 106, carry out bonding.Therefore, concavo-convex thereby encapsulant 106 distortion sometimes take place on the surface of encapsulant 106 shown in Fig. 5-2, produce bubble 501.
By contrast, in the 2nd bonding process of present embodiment, with supporting substrate 104 and sealing substrate 105 be held in make must be bonding mutually face 201,202 parallel and mutually opposed, simultaneously make opposed 201, bonding supporting substrate 104 and sealing substrate 105 on the 202 approaching directions.Like this, owing to encapsulant 106 is deformed, thereby can prevent to take place concavo-convex, between encapsulant 106 and sealing substrate 105, produce bubble by under decompression state, carrying out bonding can preventing more reliably on the surface of encapsulant 106.
Fig. 5-the 3rd illustrates with sealing substrate and supporting substrate the end view of another state after bonding.Shown in Fig. 5-1, when beginning gently to carry out from the end under the state that sealing substrate 105 is tilted with respect to supporting substrate 104 when bonding, shown in Fig. 5-3, the thickness of encapsulant 106 is different at panel end and central portion sometimes.If the thickness of encapsulant 106 is different because of the position in a self-emission panel 100, then luminescent properties is also different because of the position, and then becomes the reasons for quality decrease of self-emission panel 100.
By contrast, in the 2nd bonding process of present embodiment, with supporting substrate 104 and sealing substrate 105 be held in make must be bonding mutually face 201,202 parallel and mutually opposed, make simultaneously on opposed 201,202 approaching directions supporting substrate 104 and sealing substrate 105 is bonding, thereby can make the thickness of encapsulant 106 become even on the whole at self-emission panel 100.
In addition, though there are methods that sealing substrate 105 bendings are carried out in order sealing substrate 105 to be begun gently bonding from the end with supporting substrate 104, yet make large-scale self-emission panel 100 in order to use this method, may need to be used to make the extensive bonding device of using of sealing substrate 105 bendings of maximization, perhaps may cause sealing substrate 105 breakages for sealing substrate 105 bendings that make maximization.
By contrast, the manufacture method of present embodiment need not make sealing substrate 105 bend just can be bonding with supporting substrate 104 and sealing substrate 105, even thereby under the situation of the large-scale self-emission panel 100 of Production Example such as large-scale tv machine etc., do not need to be used to make the extensive bonding device of using of large-sized sealing substrate 105 bendings yet.And, do not worry causing sealing substrate 105 breakages in order to make large-sized sealing substrate 105 bendings, can the good self-emission panel 100 of workmanship.
That is,, can not be subjected to prevent between encapsulant 106 and sealing substrate 105, to produce bubble about the size institute of the self-emission panel 100 that will make, can obtain the second best in quality self-emission panel 100 according to the manufacture method of the self-emission panel 100 of present embodiment.In addition,, be not limited to abreast the manufacture method that supporting substrate 104 and sealing substrate 105 is bonding, can use the known various technology that make sealing substrate 105 bendings make the method for self-emission panel 100 that comprise as manufacture method.
In the present embodiment, use the encapsulant 106 that forms by thermosetting resin, and in integrated operation, under decompression state, encapsulant 106 is heated.Like this, because can be, thereby can prevent from more reliably between encapsulant 106 and supporting substrate 104 or encapsulant 106 and sealing substrate 105, to produce bubble with the specific gas composition that from the resin that forms encapsulant 106, produces when the hot curing from drawing to the outside between encapsulant 106 and the supporting substrate 104 or between encapsulant 106 and the sealing substrate 105.
And, when this integrated operation, set atmospheric pressure at the specific gas composition of discharging later on for smaller or equal to ormal weight, thereby can conduct heat to encapsulant 106 well from encapsulant 106.Promptly, though thermal source is directly contacted with supporting substrate 104 or sealing substrate 105, thereby yet conduct heat via the gas (air or inert gas) around the self-emission panel 100 by setting atmospheric pressure for, can heat encapsulant 106 thus, can heat effectively.And, can prevent to consume energy excessively for heating, can suppress manufacturing cost and rise.
Fig. 6 illustrates the chart that the special component gas flow is passed variation in time.Show in the variation of will pass in time from the special component gas flow of encapsulant 106 discharges under supporting substrate 104 and sealing substrate 105 bonding backs and the situation that thermal source contacts.When the variation that mensuration special component gas flow is passed in time, the supporting substrate 104 of self-emission panel 100 is contacted with the thermal source that is configured to about 40 ℃.The gas flow of discharging immediately after the contact is defined as 1.0, is timing definition 0.In Fig. 6, show since the time 0 and make heat source temperature rise to about 100 ℃ of the curing temperatures of encapsulant, and the variation that detected gas flow is passed in time when remaining the curing temperature of encapsulant.As can be seen from Figure 6, the special component gas flow of discharging from encapsulant 106 rose during certain, descends gradually after having crossed 10 minutes as peak point, became the amount of constant later at 40 minutes.
Manufacture method according to the self-emission panel 100 of present embodiment, for example during reaching 10 minutes or 10～40 minutes of peak value, the special component gas flow sets decompression state for, thereby the specific gas composition that produces from encapsulant 106 because hot curing is reacted is discharged to the outside, and set atmospheric pressure after this for, thereby the heat from thermal source is transmitted to self-emission panel 100 integral body effectively, can carries out good hot curing reaction.
Integrated operation is not limited to carry out under decompression state, for example by using the encapsulant 106 that forms by thermosetting resin, and in integrated operation, be configured in the atmospheric inert gas encapsulant 106 be heated, can preventing to be entered by aerobic G﹠W before the sealing fully etc. and make the luminescent properties decline of self-emission device 103 at self-emission device 103.
Equally, integrated operation is not limited to carry out under decompression state, for example by using the encapsulant 106 that forms by thermosetting resin, and in integrated operation, be configured in the inert gas of decompression state encapsulant 106 be heated, can be with the specific gas composition that from the resin that forms encapsulant 106, produces when the hot curing from drawing to the outside between encapsulant 106 and the supporting substrate 104 or between encapsulant 106 and the sealing substrate 105, thereby can prevent from more reliably producing bubble between encapsulant 106 and the supporting substrate 104 or between encapsulant 106 and the sealing substrate 105.
And, in integrated operation, by supporting substrate 104 and sealing substrate 105 are pressurizeed on the direction that makes their driving fits, the path of being passed through is formed in the encapsulant 106 that solidifies the way even the specific gas composition that produces from the resin that forms encapsulant 106 when hot curing is outwards overflowed between encapsulant 106 and supporting substrate 104 or between encapsulant 106 and the sealing substrate 105, owing to can squeeze this path, thereby can prevent the residual path that has specific gas to become branch to pass through in encapsulant 106.
In addition, the manufacture method according to the self-emission panel 100 of present embodiment by carry out the 1st bonding process under decompression state, can prevent to produce bubble between supporting substrate 104 and encapsulant 106.The 1st bonding process is not limited to carry out under decompression state, for example under the situation that the 1st bonding process is being configured to carry out in the atmospheric inert gas, can prevent between supporting substrate 104 and encapsulant 106, to enter oxygen G﹠W etc. and make the luminescent properties of self-emission device 103 descend.
In addition, for example under the situation that the 1st bonding process is being configured to carry out in the inert gas of negative pressure state, can prevent between encapsulant 106 and supporting substrate 104 to produce the bubble that comprises oxygen G﹠W etc., can prevent because the interior contained oxygen G﹠W of bubble etc. makes the luminescent properties deterioration of self-emission device 103.
The manufacturing of self-emission panel 100 can be carried out in same working space always, also can make the working space difference at each operation, yet may be because in order to make working space different and carry and make that foreign matter is sneaked into etc., thereby the preferred the 1st and the 2nd bonding process all in same working space, carry out, integrated operation is carried out in other working space.When making self-emission panel 100, for example can be full of indoor under the atmospheric pressure of inert gas with encapsulant 106 after supporting substrate 104 is bonding, change the pressure in the same working space, thereby give in the working space pressurization to strengthen driving fit etc.
In addition, in the present embodiment, encapsulant is bonded on the supporting substrate 104 that is provided with self-emission device 103, the adhesive seal base material 105 then, yet the manufacture method of self-emission panel 100 is not limited to this process sequence, after also can being bonded in encapsulant 106 on the sealing substrate 105, the bonding supporting substrate 104 that is provided with self-emission device 103.In this case, by under decompression state that sealing substrate 105 and supporting substrate 104 is bonding, can obtain effect same as described above.
(concrete example)
Below, the manufacture method as the self-emission panel 100 of concrete example of the present invention is described.In addition, because the self-emission panel 100 of concrete example of the present invention has the structure identical with above-mentioned self-emission panel shown in Figure 1 100, thereby omit diagram.
(concrete example 1)
In concrete example 1 of the present invention, use glass substrate as supporting substrate 104.Below, use symbol 104 to describe to this glass substrate.During self-emission panel 100 in making this concrete example 1, at first carry out pretreatment process.In pretreatment process, on glass substrate 104, adopt sputtering method to form indium-tin oxide film (ITO) transparent and that have conductivity.Then, use photoetching process to implement graphical to the ITO film that forms.To implement patterned substrate and immerse in the mixed liquor, thus the ITO of the part that etching is not covered by resist.Then, glass substrate 104 is removed resist, obtain the ITO electrode.Then use eurymeric (positive) polyimides, on the ITO electrode, in advance light-emitting zone is graphically formed dielectric film, form peristome (ITO exposed portions serve) simultaneously.Then use minus (negative) resist, adopt spin coating (spin coat) method film forming on dielectric film, carry out graphically forming rib (rib).Then, the glass substrate of being with ITO being carried out UV (ultraviolet) ozone cleans.Like this, on glass substrate 104, form electrode (anode) 101a.
Then, be carried out to membrane process.In film formation process, at first, the glass substrate behind the above-mentioned pretreatment process 104 moved into carried out vacuum exhaust until 10
-4In the vacuum film formation apparatus of Pa.With as hole injection layer, stacked NPD to 50nm thickness is with as hole transporting layer to these glass substrate 104 stacked CuPc to 50nm thickness, and stacked blue light-emitting layer and orange light emitting layer are as white organic EL layer.
When carrying out white organic EL layer stacked, at first stacked blue light-emitting layer.In this concrete example, make blue light-emitting layer form the film of 50nm thickness by evaporation altogether, in this blue light-emitting layer with respect to having mixed BCzVBi by 1 weight % as dopant as the DPVBi of main material.And, in this concrete example, make orange light emitting layer form the film of 50nm thickness by evaporation altogether, in this orange light emitting layer with respect to Alq as main material
3Mixed DCM by 1 weight % as dopant.
And, in film formation process, at the upside of white organic EL layer, stacked Alq
3To 20nm thickness with as electron supplying layer, come stacked Al to 150nm thickness with as negative electrode by evaporation.Like this, at the last organic EL layer that forms as luminescent layer 103 of electrode (anode) 101a.
The glass substrate 104 that has passed through film formation process from the chamber conveyance that is in vacuum in the closed chamber that is in vacuum.In addition, for comprise closed chamber, employed each device when making self-emission panel 100 owing to be known technology, thereby omit diagram and explanation here.
And before glass substrate 104 conveyances are in the closed chamber, it is indoor in advance encapsulant 106 and sealing substrate 105 to be moved into sealing.In this concrete example, use the thick film of the 35 μ m forms by epoxy resin as encapsulant 106, the thick glass substrate (glass for sealing substrate) of use 0.7mm is as sealing substrate 105.Below, use symbol 105 to describe to the glass for sealing substrate.
And use laminater will be bonding as the film and the glass for sealing substrate 105 of encapsulant 106, make and do not sneak into bubble in closed surface.Below, use symbol 106 to describe to film.In addition, the roll temperature of laminater is set for carried out the bonding of glass for sealing substrate 105 and encapsulant 106 after 90 ℃.After film 106 and glass for sealing substrate 105 is bonding, substrate platform temperature set for to make substrate temperature be 40 ℃, and the N in the discharging closed chamber
2Gas is decompressed to 10
-2Pa.In addition, in the stage being through with decompression, in the closed surface of film 106 and glass for sealing substrate 105, there is not bubble by Visual Confirmation.
After integrated, make pressure rise to 10Pa and be warmed up to 90 ℃ from vacuum, under negative pressure state, only two substrates is pressurizeed.In the stage that is through with this pressurization, by Visual Confirmation at glass for sealing substrate 105 with passed through in the closed surface of glass substrate 104 of film formation process and do not have bubble.
Then, carried out incorporate organic EL display conveyance to the heating that is provided with heating plate with indoor.After conveyance, heating is carried out exhaust and reduced pressure 10 with indoor
-4The vacuum state of Pa.When arriving vacuum state, make glass for sealing substrate 105 and the heating plate that is stabilized in 100 ℃ contact to film 106 heating, fully carry out the degasification and the curing of film 106.When the degasification of having finished film 106 and curing, make self-emission panel 100 break away from heating plates.This self-emission panel 100 is fully cooled off, use self-emission panel 100 the chamber conveyance in closed chamber from heating then.Then, the self-emission panel 100 of having confirmed not have poor sealing in closed chamber is fetched in the atmosphere.
In this concrete example 1,, can obtain not have bubble to produce and the good self-emission panel 100 of luminescent properties by making as described above.
(concrete example 2)
In this concrete example 2, the self-emission panel with bottom-emission structure 100 in the active panel is described.In addition, omit explanation for the part identical with above-mentioned concrete example 1.Following concrete example too.
In concrete example 2 of the present invention, at first on glass substrate 104, adopt the solid state growth method to form polysilicon membrane, this polysilicon membrane is processed into island, form silicon active layer.On this silicon active layer, form by SiO
2Gate insulating film that forms and the gate electrode that forms by Al.Then, in silicon active layer, mix impurity to form source region, channel formation region territory and drain region.Whole ground forms SiO on these zones
2Interlayer dielectric.Then, the part that becomes the luminous peristome of organic EL on the interlayer dielectric is formed opening, make pixel electrode (lower electrode) film forming of ITO by sputtering method by etch processes.
Then, form titanium nitride film with 100nm thickness.It is carried out etch processes, and the part that is connected with ITO in source region and drain region forms barrier metal (barrier metal) and the driving fit metal that is made of titanium nitride film simultaneously.Then, form the Al film, this Al film is implemented etch processes, form the Al wiring of source electrode and drain electrode with 600nm thickness.Afterwards, form SiO
2Diaphragm so that cover TFT.After, the manufacturing process by identical with concrete example 1 forms organic EL above the electrode 101a on glass substrate 104, seals.
In this concrete example 2,, can obtain not have bubble to produce and the good self-emission panel 100 of luminescent properties by making as described above.
(concrete example 3)
In this concrete example 3, the self-emission panel with top lighting structure 100 in the active panel is described.
In concrete example 3 of the present invention, except stacked reflector that forms by Cr and the electrode 101a that forms by ITO on interlayer dielectric as anode (pixel electrode), and as the electrode 101b of negative electrode the Al thickness is set for 2nm and adopt sputtering method make IZO stacked outside, other and concrete example 2 the same carrying out.
In this concrete example 3,, can obtain not have bubble to produce and the good self-emission panel of luminescent properties by making as described above.
(concrete example 4)
In this concrete example 4, carry out degasification by heating special time under atmospheric pressure or negative pressure state, and by improving heating-up temperature and set vacuum state for and carry out complete degasification, and solidify.Specifically, in this concrete example 4, all adopt till the glass substrate 104 that passed through film formation process and the glass for sealing substrate 105 incorporate operations method identical to carry out to making with above-mentioned concrete example 2, having carried out incorporate glass substrate 104 and 105 conveyances of glass for sealing substrate to heating with indoor, utilize inert gas to be full of the atmosphere of chamber, and carry out exhaust intraventricular pressure is reached after about 10Pa, by being contacted with the heating plate face that is stabilized in 90 ℃, glass for sealing substrate 105 heats film 106.
Then, temperature of heating plate is warmed up in 120 ℃ gradually, with indoor inert gas exhaust, intraventricular pressure is reduced pressure to becomes 10
-4Pa.Arrive 10
-4The vacuum state of Pa and process long enough make self-emission panel 100 break away from heating plates after the time, fully cool off the back conveyance in closed chamber.After in having confirmed closed chamber, not having poor sealing, this self-emission panel 100 is fetched in the atmosphere.
In this concrete example 4,, can obtain not have bubble to produce and the good self-emission panel 100 of luminescent properties by making as described above.
Claims (13)
1. the manufacture method of a self-emission panel, this self-emission panel has: supporting substrate; Self-emission device, it has and is formed on pair of electrodes on the supporting substrate, opposed and is clamped in luminescent layer between this pair of electrodes; Sealing substrate, it is mutually opposed with described supporting substrate by described self-emission device; And encapsulant, it is set between described supporting substrate and the described sealing substrate, with described self-emission device sealing, it is characterized in that the manufacture method of this self-emission panel comprises:
The 1st bonding process, described encapsulant and described supporting substrate is bonding, so that with described self-emission device sealing;
The 2nd bonding process, the supporting substrate and the described sealing substrate of will be in described the 1st bonding process under decompression state bonding described encapsulant are bonding by described encapsulant; And
Integrated operation makes described supporting substrate bonded in described the 2nd bonding process and described sealing substrate by described encapsulant and integrated.
2. the manufacture method of a self-emission panel, this self-emission panel has: supporting substrate; Self-emission device, it has and is formed on pair of electrodes on the supporting substrate, opposed and is clamped in luminescent layer between this pair of electrodes; Sealing substrate, it is opposed by described self-emission device and described supporting substrate; And encapsulant, it is set between described supporting substrate and the described sealing substrate, with described self-emission device sealing, it is characterized in that the manufacture method of this self-emission panel comprises:
The 1st bonding process, described encapsulant and described sealing substrate is bonding;
The 2nd bonding process, the sealing substrate and the described supporting substrate of will be in described the 1st bonding process under decompression state bonding described encapsulant are bonding by described encapsulant, so that with described self-emission device sealing; And
Integrated operation makes described supporting substrate bonded in described the 2nd bonding process and described sealing substrate by described encapsulant and integrated.
3. the manufacture method of self-emission panel according to claim 1 and 2, it is characterized in that described the 2nd bonding process pressurizes to described supporting substrate and described sealing substrate on opposed that makes described supporting substrate and described sealing substrate mutual approaching direction.
4. the manufacture method of self-emission panel according to claim 1 and 2, it is characterized in that, described the 2nd bonding process with described supporting substrate and described sealing substrate be held in make must be bonding mutually face parallel and mutually opposed, simultaneously bonding described supporting substrate and described sealing substrate.
5. the manufacture method of self-emission panel according to claim 1 and 2 is characterized in that,
Described encapsulant is by cured thermosetting forms by being heated,
Described integrated operation is carried out under decompression state.
6. the manufacture method of self-emission panel according to claim 5, it is characterized in that described integrated operation is carried out the hot curing reaction time gas componant that produces at described encapsulant and set atmospheric pressure for from decompression state after roughly being become constant basis heating time.
7. the manufacture method of self-emission panel according to claim 1 and 2 is characterized in that,
Described encapsulant is formed by the thermosetting resin that is cured by heating,
Described integrated operation is carried out in being configured to atmospheric inert gas.
8. the manufacture method of self-emission panel according to claim 1 and 2 is characterized in that,
Described encapsulant is formed by the thermosetting resin that is cured by heating,
Described integrated operation is carried out in being configured to the inert gas of decompression state.
9. the manufacture method of self-emission panel according to claim 5 is characterized in that, described integrated operation is pressurizeed to described supporting substrate and described encapsulant on opposed that makes described supporting substrate and described encapsulant mutual approaching direction.
10. the manufacture method of self-emission panel according to claim 1 and 2 is characterized in that, described the 1st bonding process carries out under decompression state.
11. the manufacture method of self-emission panel according to claim 1 and 2 is characterized in that, described the 1st bonding process carries out in being configured to atmospheric inert gas.
12. the manufacture method of self-emission panel according to claim 1 and 2 is characterized in that, described the 1st bonding process carries out in being configured to the inert gas of decompression state.
13. the manufacture method of self-emission panel according to claim 1 and 2, described self-emission device is an organic EL.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004372320A JP4731902B2 (en) | 2004-12-22 | 2004-12-22 | Method for manufacturing self-luminous panel |
| JP2004372320 | 2004-12-22 |
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| Publication Number | Publication Date |
|---|---|
| CN1794483A CN1794483A (en) | 2006-06-28 |
| CN100521291C true CN100521291C (en) | 2009-07-29 |
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| CNB2005101321833A Active CN100521291C (en) | 2004-12-22 | 2005-12-22 | Manufacturing method of self-luminous panel |
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| JP (1) | JP4731902B2 (en) |
| KR (1) | KR101089487B1 (en) |
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| JP2848189B2 (en) * | 1993-05-28 | 1999-01-20 | 凸版印刷株式会社 | Organic thin film EL device |
| JP2003017259A (en) * | 2001-06-29 | 2003-01-17 | Sanyo Electric Co Ltd | Manufacturing method of electroluminescent display panel |
| JP4057278B2 (en) * | 2001-11-02 | 2008-03-05 | セイコーエプソン株式会社 | ORGANIC ELECTROLUMINESCENT DEVICE, ITS MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
| JP3650101B2 (en) * | 2003-02-04 | 2005-05-18 | 三洋電機株式会社 | Organic electroluminescence device and manufacturing method thereof |
| JP2004319264A (en) * | 2003-04-16 | 2004-11-11 | Ulvac Japan Ltd | Sealing mechanism and sealing device using it |
-
2004
- 2004-12-22 JP JP2004372320A patent/JP4731902B2/en active Active
-
2005
- 2005-11-30 TW TW094142113A patent/TWI423723B/en active
- 2005-12-21 KR KR1020050126806A patent/KR101089487B1/en active IP Right Grant
- 2005-12-22 CN CNB2005101321833A patent/CN100521291C/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104885567A (en) * | 2012-12-21 | 2015-09-02 | 柯尼卡美能达株式会社 | Organic electroluminescent panel, and production method and production apparatus therefor |
| CN104885567B (en) * | 2012-12-21 | 2016-12-14 | 柯尼卡美能达株式会社 | Organic electroluminescence panel and manufacture method thereof and manufacture device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI423723B (en) | 2014-01-11 |
| KR20060072059A (en) | 2006-06-27 |
| TW200626000A (en) | 2006-07-16 |
| CN1794483A (en) | 2006-06-28 |
| JP2006179352A (en) | 2006-07-06 |
| JP4731902B2 (en) | 2011-07-27 |
| KR101089487B1 (en) | 2011-12-02 |
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