CN100495622C - A surface paste fuse of nano carborundum-alumina porcelain base and its making method - Google Patents
A surface paste fuse of nano carborundum-alumina porcelain base and its making method Download PDFInfo
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- CN100495622C CN100495622C CNB2006101613681A CN200610161368A CN100495622C CN 100495622 C CN100495622 C CN 100495622C CN B2006101613681 A CNB2006101613681 A CN B2006101613681A CN 200610161368 A CN200610161368 A CN 200610161368A CN 100495622 C CN100495622 C CN 100495622C
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Abstract
This invention relates to one nanometer carbon silicon to alumina compound ceramics materials for base slice element surface fuse and its process method, wherein, the nanometer carbon silicon to alumina ceramics base slice surface fuse comprises metal fuse wire, insulation layer, sealing layer and metal terminal; the invention is characterized by the following: the said ceramics base slice is made from nanometer alumina for 70 to 97 percent mole and nanometer carbon silicon for 1 to 30 percent moles.
Description
Technical field
The present invention is the application of nanometer technology in the electronic devices and components preparation field, and providing a kind of is surface mount chip fuse of substrate main component and preparation method thereof with nanometer silicon carbide-alumina composite ceramic material.
Background technology
The surface mount chip fuse is to be made of parts such as substrate 1, Metal Melting fracture of wire 2, insulating barrier 3, encapsulated layer 4 and metal terminations 5, as Fig. 1.Wherein substrate is supporting construction and the chief component of surface mount chip fuse (SMD chip fuse), and its performance directly affects mechanical performances such as the hardness, toughness of product and calorifics such as heat conduction, insulation resistance, electric property.Existing surface mount chip fuse is a substrate with materials such as aluminium oxide ceramics, high polymers normally, ceramic material substrate insulating properties, thermal endurance are good, but hardness is too high after the sinter molding, toughness is not enough, and is cracked easily when substrate machine-shaping and the disjunction of fuse high voltage; High polymer material substrate good processability but not high pressure resistant high heat is used for low forcing down in the circuit of stream more is of limited application.
Aluminium oxide series pottery is the most frequently used substrate material of surface-adhered type fuse, because easily cracked when machine-shaping, the processing method that adopts mainly contains two kinds at present: once being processing such as before without roasting, rule, and sintering again after the moulding; The 2nd, after the roasting moulding, adopt the high-precision tool processes of high rigidity.Preceding kind technology is owing to carry out before hardened material, and difficulty of processing is lower, but pottery can change with production size of devices shape after roasting, and the scale error of finished product often reaches more than 5%, causes higher profile defective; Though form accuracy is higher after a kind of processes in back, cause the production cost higher because of apparatus expensive and technical difficulty are high.In order to utilize common machine cuts processing, actual mostly being of adopting added silica-alumina ceramic substrate that silica glass material formation toughness increases in aluminium oxide.The silica glass material that adds can be the simple glass of dystectic quartz glass or low softening temperature.Quartz glass has very strong high-voltage resistance capability, but when fusing, fuse high temperature can volatilize, make the alumina ceramic substrate top layer micropore occur, the fuse body metal ingredient of fusion enters micropore can generate the electric leakage fluid layer that one deck has certain conductive capability, causes fuse blows not thorough.The glassy layer of low softening temperature can make fuse-link fuse at a lower temperature as the disconnected material (being printed on the fuse-link layer) of fluxing, thereby has reduced the volatilization of substrate surface silica when fusing, and suppresses the formation of electric leakage layer, improves the reliability of thorough fusing; But such change has reduced the high-voltage resistance capability of fuse simultaneously.The fuse that adopts low softening temperature glassy layer is under the identical condition of all the other technologies, and its rated voltage (can bear ceiling voltage) significantly reduces than the fuse that uses quartz glass layer.
For addressing the above problem, certainly will to find and have high tenacity concurrently, the baseplate material of high withstand voltage properties is so that the paster fuse products of manufacturing property excellence.
Summary of the invention
The paster fuse that the purpose of this invention is to provide a kind of nanometer silicon carbide-alumina substrate, this fuse improves mechanical tenacity, thermal endurance and the electrical insulating property of surface mount chip fuse ceramic substrate by adopting nanometer silicon carbide-alumina composite ceramic substrate; Improve mechanical tenacity surface mount chip fuse processing cost is reduced, dimensional accuracy and substrate qualification rate improve, and reduce waste of material, and effectively improve the anti-bending performance of device; Improving thermal endurance reduces the surface mount chip fuse or situation such as avoid occurring breaking, split when the high pressure disjunction; Improve electrical insulating property and fuse is reduced or the formation of substrate surface micropore when having avoided high temperature fusing, prevented the generation of fusing back leakage current, guarantee to use the quartz glass layer voltage endurance capability of increase fuse of fluxing.The deficiencies in the prior art have been overcome effectively.
The surface mount chip fuse of the said nanometer silicon carbide-alumina ceramic substrate of the present invention, comprise ceramic substrate, Metal Melting fracture of wire, insulating barrier, encapsulated layer and metal termination, it is characterized in that said ceramic substrate is that primary raw material is made by the nano aluminium oxide and the 1-30% mole nanometer silicon carbide of 70-97% mole.
The form of above-mentioned said nano aluminium oxide, nanometer silicon carbide can be nanocrystalline or nano whisker.More particularly, the nano aluminium oxide size of microcrystal is recommended 5-500nm, preferred 50nm; The nanometer silicon carbide size of microcrystal is recommended 5-200nm, preferred 30nm.The diameter of nano aluminium oxide or silicon carbide whisker (or fiber) is preferably at 10-200nm, length 1-100 μ m.Wherein carbofrax material has the intensity height, conductive coefficient is big, shock resistance good, premium properties such as anti-oxidant anti-erosion under the wear-resistant and high temperature, by mixing the conductive coefficient of modulation substrate that can be controlled, thereby obtain adapting to the different fuse substrate materials that require with the different proportion of aluminium oxide ceramics.
The further technical scheme of the present invention is the trace doped composition that the 0.5-10% mole also can be arranged in the raw material of above-mentioned said ceramic substrate; Said doping composition is nano-oxide, carbide or nitride; Specifically be to recommend but be not limited in nano titanium carbide, boron carbide, aluminium nitride, titanium nitride, zirconia, titanium oxide, boron oxide, magnesium oxide, zinc oxide and nickel oxide, cobalt oxide, yittrium oxide, lanthana, cerium oxide, manganese oxide, praseodymium oxide, neodymia, promethium oxide, samarium oxide, gadolinium oxide, terbium oxide, the tungsten oxide etc. one or more, the preferred 1-3% mole of doping ratio.The said doping composition nanocrystal preferred 5-200nm in footpath.Those skilled in the art can make the satisfied different fuses that require such as disconnected soon or time lagged type by the diameter adjustment mechanical tenacity and the material thermal conductivity of control carborundum-aluminium oxide proportioning, the doping of micro-nano-metal-oxide and nanocrystal.
Nanometer silicon carbide can adopt market existing, as metallurgical institute of the Chinese Academy of Sciences, or the like product of other mechanisms; Aluminium oxide can be buied from the market, also can be with coprecipitation etc. by existing method preparation: get an amount of AlCl
36H
2O and deionized water mix mutually and stir, and add an amount of ammoniacal liquor under suitable temperature, generate Al (OH)
3, filter and dry the Al that can make the variable grain size
2O
3
The present invention also provides the preparation method of said nanometer silicon carbide-alumina ceramic substrate:
(1) the preparation main component is the composite nano-ceramic powder of nano aluminium oxide (70-97% mole) and nanometer silicon carbide (1-30% mole),
(2) be raw material with the composite nano-ceramic powder, make nanometer silicon carbide-alumina ceramic substrate with ceramic substrate moulding, the sintering process of routine; Adopt conventional thick film screen printing and screen printing technique on substrate, to print electrode and the fusible link material again, make the surface mount chip fuse product of nanometer silicon carbide-alumina ceramic substrate again through technologies such as encapsulation, sections.
Can use conventional nanometer thinning method to obtain the composite nano-ceramic powder in the above-mentioned steps (1), specifically can be but be not limited to following method: wet ball grinding method, Ultrasonic Pulverization method, microwave method.The preferred wet ball grinding method of the present invention specifically can be to grind 0.5-50 hour in high speed ball mill, obtains the composite nano-ceramic powder.More detailed operation is: the high speed ball mill service intermittent is preferably worked and was stopped in 15 minutes 10 minutes to avoid temperature too high, and rotating speed 500-1200 rev/min, preferred 800 rev/mins.Wherein, in order to prevent particle agglomeration, can also add polyesters, polyester salt, polyurethanes dispersion stabilizer as required, prevent to reunite as BYK104S etc., preferred dispersion stabilizer needs to select according to concrete raw material; Add the surface topography of surfactant such as modulation nano particles such as NP9, NP10, OP15 and promote the nano particle self assembly, preferred activating agent also needs to select according to concrete raw material.The consumption of dispersion stabilizer and activating agent and kind are that those skilled in the art know or energy is determined according to existing existing art.Also can disperse in advance before ball grinder that mixture is packed into, as add absolute ethyl alcohol in hybrid particles, disperse through ultrasonic vibration, oven dry reinstalls ball grinder after filtering.Can obtain nanometer silicon carbide-aluminium oxide hybrid particles of average grain diameter 5-500nm through ball milling.
According to the surface mount chip fuse preparation technology of routine, above-mentioned steps (2) can be one of following three kinds of technologies: mechanical die-cut method behind laser cutting method and the sintering behind green billet line back sintering process, the sintering.
Above-mentioned said green billet line back sintering process specifically may further comprise the steps:
1. powder isostatic compaction in having the mould of line;
2. high temperature does not have pressure or hot pressed sintering;
3. have the square ceramic sheet material twin polishing of delineating line;
4. printed back electrode, drying, sintering;
5. printing front electrode, drying, sintering;
6. utilize screen printing technique, printing fusible link, drying, sintering;
7. glassy layer printing, drying, sintering;
8. adopt resin as the encapsulated layer printing;
9. be prepared into rectangular tiles through longitudinal and transverse cutting splitting;
10. go up two terminations of fuse, positive counterelectrode is coupled together.
Laser cutting method specifically may further comprise the steps behind the above-mentioned said sintering:
1, powder isostatic compaction in common die;
2, high temperature does not have pressure or hot pressed sintering;
3, square ceramic sheet material twin polishing;
4, printed back electrode, drying, sintering;
5, printing front electrode, drying, sintering;
6, utilize screen printing technique, printing fusible link, drying, sintering;
7, glassy layer printing, drying, sintering;
8, adopt resin as the encapsulated layer printing;
9, utilize laser to be prepared into rectangular tiles through longitudinal and transverse cutting;
10, go up two terminations of fuse, positive counterelectrode is coupled together.
Mechanical die-cut method specifically may further comprise the steps behind the above-mentioned said sintering:
1, powder isostatic compaction in common die;
2, high temperature does not have pressure or hot pressed sintering;
3, square ceramic sheet material twin polishing;
4, printed back electrode, drying, sintering;
5, printing front electrode, drying, sintering;
6, utilize screen printing technique, printing fusible link, drying, sintering;
7, glassy layer printing, drying, sintering;
8, adopt resin as the encapsulated layer printing;
9, utilize the longitudinal and transverse cutting of mechanical die-cut process to be prepared into rectangular tiles;
10, go up two terminations of fuse, positive counterelectrode is coupled together.
In the said method step of the present invention, the process conditions that isostatic compaction is concrete, preferred pressure is 50-300Mpa.After the moulding during high temperature sintering programming rate be 10-200 degree per hour, temperature retention time 0.5-10 hours, holding temperature are 1100 degrees centigrade to 1800 degrees centigrade different range.Can not have the row of compressing into during high temperature sintering, can carry out maintaining under the hot pressing yet.Hot pressed sintering maintains 10-50Mpa at the pressure of holding stage, and other technology is consistent with non-pressure sintering technology.
Different sintering temperatures causes the different particle size of composite ceramic material; Equally, the SiC granular size that is added into also can influence the granular size of matrix alumina ceramic material.Be added into smaller particles, the bending strength of composite ceramic material, toughness and compactness all can increase.This is because the nano-crystalline granule radius of curvature is more little, and surface energy is high more, and easy more being deep in the blapharoplast in the sinter molding process forms effective transgranular fracture mechanism, thereby improves toughness and bending strength.
Use the inventive method, can dwindle the ceramic substrate size, improve the uniformity of thick film screen printing thickness, the consistency of enhancing product performance, specific to reality: ceramic substrate adopts small size 60mm * 49.5mm, less than the ceramic substrate size 60mm * 70mm that adopt in producing at present more.
The test of the cripping test of ceramic fuse substrate material significantly is better than the cripping test standard in the GB9364 standard among the present invention.The integrality of high-pressure subsection test back fuse is compared with common alumina substrate fuse and is had significant raising.
The standard of test of the cripping test of ceramic fuse and high-pressure subsection test is according to national fuse industry standard GB9364.1 among the present invention.
Nanometer silicon carbide-alumina composite ceramic substrate the fuse that adopts technology of the present invention to make, compare with conventional oxidation aluminium substrate fuse and to have the following advantages:
1. machine-shaping is easy, and finished product has reduced production difficulty and cost when guaranteeing form accuracy.If the advanced sintering again of ruling of going of sintering blank does not then meet the rate of finished products raising of preliminary dimension, the defective products that sieve falls reduces; If there is the fuse of special accurate dimension requirement to need behind the sintering punching molding again, then since the raising of substrate toughness significantly reduced in the course of processing broken, split situation.
2. intensity, toughness and impact resistance height have increased the fail safe in transportation and the use, particularly reduce or have avoided fragmentation, the explosion of fuse when the high pressure disjunction may.Common paster fuse can produce a large amount of heat usually fusing moment, and common alumina substrate influences integrated circuit safety because its fragility often produces slight blast.The aluminium oxide that carborundum is strengthened has better thermal conductance and toughness, generally is not easy to produce in fuse high pressure disjunction moment to burst, and guarantees the fail safe of integrated circuit.
3. insulation resistance height reduces and has avoided the leakage current after the fusing.The content of silica is reduced in carborundum-alumina composite ceramic substrate, nano ceramics is fine and close more, the substrate top layer micropore that the silica volatilization causes when effectively having reduced high temperature fusing, thus the metal ingredient of fusion fuse body enters micropore and generates the electric leakage fluid layer when having suppressed fusing.Fusing back insulation resistance is improved, and has prevented the appearance of leakage current.(this patent fuse insulation resistance all reaches more than the 1M Ω.)
4. fusing performance is adjustable.By preparing different micro-structurals, or the method for a small amount of nanometer second phase particle that mixes, the thermal conduction characteristic of nanometer silicon carbide-alumina ceramic substrate minitype paster fuse can be adjustable in a big way.Thereby the speed (speed fuses) that the fuse-link temperature rises when having controlled fusing obtains different time-current characteristic index (adopt the substrate of rapid heat dissipation to obtain the operating chacteristics of delaying time, the slow substrate that dispels the heat obtains the quick fuse characteristic), meets the different needs.
The surface mount chip fuse of this kind substrate can accomplish that size is accurate, substrate qualification rate height, and waste of material is few, mechanical strength and toughness height, disjunction safety, characteristics such as material thermal conductivity and fusing performance are adjustable have solved the difficult problem in the industry.
Description of drawings
Fig. 1 mounts the chip fuse structures schematic diagram
Wherein, 1, substrate; 2, Metal Melting fracture of wire; 3, insulating barrier; 4, encapsulated layer; 5, metal termination.
Embodiment
Employed in the present invention term unless other explanation is arranged, generally has the implication of those of ordinary skills' common sense.The said ratio of the present invention except as otherwise noted, all is meant molar ratio.Measure the bulk density of hot pressed samples with A Ji virtue method; Composite material is used the scanning electron microscopic observation surface under blanket of nitrogen, use transmission electron microscope observing SiC at Al
2O
3Distribution in the matrix; Measure the sample grain size with division lines method (the linear intercept method), each sample is chosen four surperficial SEM photos (being no less than 200 crystal grain) arbitrarily, calculates average grain size G according to formula G=1.5L/MN, and wherein L is a line length, M is a multiplication factor, and N is a space-number; The three-point bending resistance strength test of material is carried out on the INSTRON21195 universal testing machine, and loading speed is 0.15mm/min, and toughness test adopts indentation method, carries out on AKASHI (AVK-A) microhardness testers.
Below in conjunction with specific embodiment and Comparative Examples, and comparable data is described the present invention in further detail.Should be understood that these embodiment just in order to demonstrate the invention, but not limit the scope of the invention by any way.
In following embodiment and Comparative Examples, various processes of Xiang Ximiaoshuing and method are not conventional methods as known in the art.The source of agents useful for same, trade name and be necessary to list its constituent person indicate when occurring first that all used thereafter identical reagent if no special instructions, and is all identical with the content of indicating first.
Embodiment 1
Prepare Al with heterogeneous precipitation method
2O
3, promptly an amount of AlCl
36H
2O joins in the deionized water, adds ammoniacal liquor, generates Al (OH)
3Precipitation is dispersed in SiC powder (particle diameter of being produced with Chinese Academy of Sciences's Beijing smelting is 30nm) in the solution, and after filtration, technologies such as drying, calcining, ball milling make Al
2O
3The SiC particulate composite of powder wrapped takes out dusty material, utilizes abrasive tool moulding, is prepared into 60mm * 49.5mm, and thickness is the square sheets of 0.8mm.Utilize grinding tool delineation line, this ceramic sheet material is divided into 1.6mm x 0.8mm rectangular tiles (being suitable for 0603 type paster fuse), carry out hot pressed sintering and make sintered body between 1650～1750 degrees centigrade, the used pressure of hot pressing is 30Mpa, temperature retention time 2 hours.The content of SiC is 15mol% in the prepared sample.1200 rpms of drum'ss speed of rotation vacuumize and charge into argon gas before the ball grinder work.Add macromolecule dispersing agent BYK104S, add surfactant OP15.Agate ball, ratio of grinding media to material 6:1 ground 5 hours.Ceramic dense degree 99.7% behind the sintering, what obtain has a square ceramic sheet material twin polishing of delineating line, through the Chip-R typography of following steps, makes the paster fuse:
1. printed back electrode, drying, sintering
2. printing front electrode, drying, sintering
3. utilize screen printing technique, printing fusible link, drying, sintering
4. glassy layer printing, drying, sintering
5. adopt resin as the encapsulated layer printing
6. be prepared into 1.6mm x 0.8mm rectangular tiles through longitudinal and transverse cutting
7. go up two terminations of fuse, positive counterelectrode is coupled together
8. the substandard products that the defective and resistance of apparent size does not conform to standard, tape package are fallen in screening
Adopt above method to make as shown in Figure 1 0603 type fuse, it is 6% that screening is fallen apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in ceramic substrate fuse of the present invention in this test, is a kind of to the safer paster fuse of electric circuit.Find no the consolute body of fuse body and substrate after this fuse blows, do not find leakage phenomenon after the segmentation, insulation resistance is more than 200M Ω.Under same slurry and manufacture craft condition, the average fusing time of common substrate twice rated current (this example rated current is 5A) is 2.3 seconds, and adopting this substrate is 4.5 seconds.
Embodiment 2
SiC-Al
2O
3The composite nano powder preparation is with embodiment 1, and powder is not portrayed line after utilizing the grinding tool hydrostatic profile, directly hot pressed sintering.Utilize laser to be prepared into the 1.6mm x 0.8mm rectangular tiles through longitudinal and transverse cutting during except that section, other technologies are identical with embodiment 1.It is 0.8% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 6.5%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can the 100% satisfied experimental test condition that doubles " pivot distance 9cm, the crooked 2cm of 1mm/s " of standard 9364.Situation does not appear breaking, splitting in ceramic substrate fuse of the present invention when disjunction is tested under 63V voltage, be a kind of, and whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage to the safer paster fuse of electric circuit.Fusing back insulation resistance is more than 200M Ω, and under same slurry and manufacture craft condition, the average fusing time of common substrate twice rated current (this example rated current is 5A) is 2.3 seconds, and adopting this substrate is 4.8 seconds.
Material preparation process is with embodiment 2, and the technology difference that is prepared into the paster fuse is prepared into 1.6mm x 0.8mm rectangular tiles for utilizing the longitudinal and transverse cutting of mechanical die-cut process, and all the other steps are identical.It is 8% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8.5%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, the experimental test condition (doubling the level of standard 9364) that can 100% satisfies " pivot distance 9cm, the crooked 2cm of 1mm/s ".Whole fracture of fuse or cracked situation do not appear in the 0603 type paster fuse for preparing under these process conditions when disjunction is tested under 63V voltage, divide and have no progeny insulation resistance more than 200M Ω, the average fusing time of twice rated current (this example rated current 5A) is 4.1 seconds.
Embodiment 4
Be the 30mol% except that chemical composition SiC particle in the preparation, other processes are identical with technology in " embodiment 2 ".It is 0.5% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 6%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of to the safer paster fuse of electric circuit, insulation resistance is not found leakage phenomenon after the segmentation more than 1000M Ω.Under same slurry and manufacture craft condition, the average fusing time of common substrate twice rated current (this example rated current 5A) is 2.3 seconds, and adopting this substrate is 7.8 seconds.
Be the 1mol% except that chemical composition SiC particle in the preparation, other processes are identical with technology in " embodiment 2 ".It is 2% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 88% (GB9364 standard) that size is qualified, satisfy " pivot distance 9cm, the crooked 2cm of 1mm/s " experimental test condition (doubling the level of standard 9364) be 46%.In the 0603 type paster fuse for preparing under these process conditions disjunction when test under 63V voltage,, 32% whole fracture of fuse or cracked situation occur, than 50% of common aluminum oxide substrate improvement is arranged.Divide and have no progeny insulation resistance more than 50M Ω, the average fusing time of twice rated current (this example rated current 5A) is 2.5 seconds.
Embodiment 6
Be the 1mol% except that chemical composition SiC particle in the preparation, other processes are identical with technology in " embodiment 3 ".It is 15% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8.5%, the fuse bending experiment qualification rate 85% (GB9364 standard) that size is qualified, satisfy " pivot distance 9cm, the crooked 2cm of 1mm/s " experimental test condition (doubling the level of standard 9364) be 43%.In the 0603 type paster fuse for preparing under these process conditions disjunction when test under 63V voltage,, 36% whole fracture of fuse or cracked situation occur, than 50% of common aluminum oxide substrate improvement is arranged.Divide and have no progeny insulation resistance more than 50M Ω, the average fusing time of twice rated current (this example rated current 5A) is 2.7 seconds.
Embodiment 7
Implementation process except that sinter molding with the pressureless sintering, other are with embodiment 1.Ceramic dense degree 99.1% behind the sintering, it is 9% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 98% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation appears breaking, splitting in this patent ceramic substrate fuse 0.5% product in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.Adopting the average fusing time of this substrate twice rated current (this example rated current 5A) is 4.0 seconds.
Embodiment 8
Material preparation process is the 8mol% except that chemical composition SiC particle, other is with embodiment 1, it is 10% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 9%, the fuse bending experiment qualification rate 95% (GB9364 standard) that size is qualified, the experimental test condition (doubling the level of standard 9364) that can 88% satisfies " pivot distance 9cm, the crooked 2cm of 1mm/s ".Whole fracture of fuse or cracked situation appear in the 0603 type paster fuse for preparing under these process conditions disjunction when test about 10% under 63V voltage.Divide and have no progeny insulation resistance more than 100M Ω, the average fusing time of twice rated current (this example rated current 5A) is 3.1 seconds.
Embodiment 9
Remove raw material Al
2O
3Buy outer (Japanese Tao Ye company manufacturing, its average particle size particle size is 300nm, purity 99.5%) from market, other implementation processes are identical with embodiment 1.The ceramic dense degree hot pressing 98% that obtains.It is 9.5% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 9%, the fuse bending experiment qualification rate 99% (GB9364 standard) that size is qualified, and can 96.7% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation appears breaking, splitting in this patent ceramic substrate fuse 2.5% product in this test, be a kind of to the safer paster fuse of electric circuit, insulation resistance is more than 200M Ω after the segmentation, and the average fusing time of twice rated current (this example rated current 5A) is 3.8 seconds.
Embodiment 10
Embodiment technology is with embodiment 1, and the SiC raw material are instead of nano whisker (or fiber), and its diameter is on average at 120nm, length 23 μ m.It is 5% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 99.5% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation appears breaking, splitting in this patent ceramic substrate fuse 0.5% product in this test, be a kind of to the safer paster fuse of electric circuit, insulation resistance is more than 200M Ω after the segmentation, and the average fusing time of twice rated current (this example rated current 5A) is 4.8 seconds.
Embodiment 11
Implementation process is identical with embodiment 3, removes raw material instead of Al
2O
3Nano whisker (or fiber), its diameter be on average at 110nm, length 19 μ m.It is 7.5% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse product in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 12
Embodiment technology is with embodiment 3, SiC and Al
2O
3Raw material are all instead of nano whisker (or fiber), and its average diameter is respectively 120 and 110nm, and length is respectively 23 μ m and 19 μ m.It is 7% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse product in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.Insulation resistance is more than 1000M Ω after the segmentation, and the average fusing time of twice rated current (this example rated current 5A) is 4.8 seconds.
Embodiment 13
Embodiment technology is added nano titanium carbide (diameter 50nm) in addition with embodiment 1.It is 6.5% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, is a kind of to the safer paster fuse of electric circuit.
Embodiment 14
Embodiment technology is added nano aluminum nitride (diameter 40nm) in addition with embodiment 1.It is 7% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 15
Embodiment technology is added Nano titanium nitride (diameter 43nm) in addition with embodiment 3.It is 7.3% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 16
Embodiment technology is added nano zircite (diameter 32nm) in addition with embodiment 1.It is 6.2% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 17
Embodiment technology is added nano oxidized boron (diameter 51nm) in addition with embodiment 1.It is 6.7% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 18
Embodiment technology is added nano magnesia (diameter 42nm) in addition with embodiment 3.It is 7% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 19
Embodiment technology is added nano zine oxide (diameter 22nm) in addition with embodiment 1.It is 5.9% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 20
Embodiment technology is added nano-nickel oxide (diameter 52nm) in addition with embodiment 1.It is 6.9% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 21
Embodiment technology is added nanometer cobalt oxide (diameter 24nm) in addition with embodiment 1.It is 7% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 22
Embodiment technology is added nano yttrium oxide (diameter 20nm) in addition with embodiment 1.It is 5.8% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 23
Embodiment technology is added nano lanthanum oxide (diameter 57nm) in addition with embodiment 1.It is 7.1% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 24
Embodiment technology is added nano-cerium oxide (diameter 55nm) in addition with embodiment 3.It is 7.7% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 25
Embodiment technology is added nano manganese oxide (diameter 51nm) in addition with embodiment 3.It is 8.1% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 26
Embodiment technology is added nano oxidized praseodymium (diameter 51nm) in addition with embodiment 3.It is 7.8% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 27
Embodiment technology is added nano oxidized neodymium (diameter 51nm) in addition with embodiment 1.It is 7.5% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 28
Embodiment technology is added nano oxidized promethium (diameter 49nm) in addition with embodiment 1.It is 7.6% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 29
Embodiment technology is added nano oxidized samarium (diameter 50nm) in addition with embodiment 1.It is 7.6% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 30
Embodiment technology is added nano oxidized gadolinium (diameter 50nm) in addition with embodiment 1.It is 7.6% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 31
Embodiment technology is added nano oxidized terbium (diameter 47nm) in addition with embodiment 1.It is 7.6% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find leakage phenomenon after the segmentation in addition the safer paster fuse of electric circuit.
Embodiment 32
Embodiment technology is added nanometer tungsten oxide (diameter 27nm) in addition with embodiment 1.It is 7.4% that the 0603 type fuse of making screens apparent size underproof, the printed circuit thickness that screening is fallen is underproof to be 8%, the fuse bending experiment qualification rate 100% (GB9364 standard) that size is qualified, and can 100% satisfy the experimental test condition of " pivot distance 9cm; the crooked 2cm of 1mm/s ", this bending test doubles the level of standard 9364.Whole fracture of fuse or cracked situation appear in the common alumina substrate paster of the 0603 type fuse for preparing under the same process condition more than 50% when disjunction is tested under 63V voltage, and situation does not appear breaking, splitting in this patent ceramic substrate fuse in this test, be a kind of, do not find to divide the leakage phenomenon of having no progeny in addition the safer paster fuse of electric circuit.
Claims (8)
1, a kind of surface mount chip fuse of nanometer silicon carbide-alumina ceramic substrate, comprise ceramic substrate, Metal Melting fracture of wire, insulating barrier, encapsulated layer and metal termination, it is characterized in that said ceramic substrate is made by the raw material of the nanometer silicon carbide of nano aluminium oxide that contains the 70-97% mole and 1-30% mole.
2, according to the said surface mount chip fuse of claim 1, it is characterized in that wherein the form of said nano aluminium oxide is nanocrystalline or nano whisker, the form of said nanometer silicon carbide is nanocrystalline or nano whisker.
3, surface mount chip fuse according to claim 2, it is characterized in that: the particle diameter of said nanocrystalline carborundum is 5-200nm; The particle diameter of said nanocrystalline aluminium oxide is 5-500nm.
4, surface mount chip fuse according to claim 2 is characterized in that: the diameter of said nanometer silicon carbide whisker is 10nm-200nm, length 1-100 μ m; The diameter of said aluminium oxide nano whisker is 10nm-200nm, length 1-100 μ m.
5, surface mount chip fuse according to claim 1 is characterized in that, said ceramic substrate also can have the trace doped composition of 0.5-10% mole in its composition; The said branch that is doping to comprises nano titanium carbide, nano boron carbide, nano aluminum nitride, Nano titanium nitride, nano zircite, nano oxidized boron, nano magnesia, nano zine oxide and nano-nickel oxide, nano silicon oxide, nano tin dioxide, nanometer cobalt oxide, nano yttrium oxide, nano lanthanum oxide, nano-cerium oxide, nano manganese oxide, nano oxidized praseodymium, nano oxidized neodymium, nano oxidized promethium, nano oxidized samarium, nano oxidized gadolinium, nano oxidized terbium, in the nanometer tungsten oxide one or more.
6, surface mount chip fuse according to claim 5 is characterized in that, the nanocrystalline particle diameter of said doping composition is 5-200nm.
7, the method for the surface mount chip fuse of the described nanometer silicon carbide-alumina ceramic substrate of preparation claim 1 may further comprise the steps:
(1) preparation composite nano-ceramic powder contains the nano aluminium oxide of 70-97% mole and the nanometer silicon carbide of 1-30% mole in the composition of said composite nano-ceramic powder,
(2) be raw material with the composite nano-ceramic powder, make nanometer silicon carbide-alumina ceramic substrate with ceramic substrate moulding, the sintering process of routine; Adopt conventional thick film screen printing and screen printing technique on substrate, to print electrode and the fusible link material again, make the surface mount chip fuse product of nanometer silicon carbide-alumina ceramic substrate again through technologies such as encapsulation, sections.
According to the said preparation method of claim 7, it is characterized in that 8, the trace doped composition of 0.5-10% mole also can be arranged in the said composite nano-ceramic powder; The said branch that is doping to comprises nano titanium carbide, nano boron carbide, nano aluminum nitride, Nano titanium nitride, nano zircite, nano oxidized boron, nano magnesia, nano zine oxide and nano-nickel oxide, nano silicon oxide, nano tin dioxide, nanometer cobalt oxide, nano yttrium oxide, nano lanthanum oxide, nano-cerium oxide, nano manganese oxide, nano oxidized praseodymium, nano oxidized neodymium, nano oxidized promethium, nano oxidized samarium, nano oxidized gadolinium, nano oxidized terbium, in the nanometer tungsten oxide one or more.
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| CN101807500B (en) * | 2009-02-13 | 2012-01-11 | Aem科技(苏州)股份有限公司 | Surface mounting fuse protector and manufacturing method thereof |
| CN101944463B (en) * | 2010-08-31 | 2012-11-28 | 广东风华高新科技股份有限公司 | Film sheet fuse and preparation method thereof |
| CN101985396B (en) * | 2010-11-03 | 2013-03-20 | 刘述江 | Method for preparing aluminum nitride ceramic substrate by clinker slicing |
| CN102568723B (en) * | 2012-01-09 | 2015-06-24 | 深圳顺络电子股份有限公司 | NTC (negative temperature coefficient) thermistor chip, resistor and manufacturing method thereof |
| CN102557590B (en) * | 2012-01-30 | 2013-08-28 | Aem科技(苏州)股份有限公司 | Ceramic powder for fuse, ceramic-based fuse and preparation methods for ceramic powder and ceramic-based fuse |
| CN104201076B (en) * | 2012-03-13 | 2016-05-18 | 苏州晶讯科技股份有限公司 | There is the fuse that suppresses electric arc function |
| CN102683570B (en) * | 2012-05-15 | 2015-12-02 | 复旦大学 | White light LEDs of a kind of composite ceramic substrate encapsulation and preparation method thereof |
| CN105110772A (en) * | 2015-07-24 | 2015-12-02 | 合肥凯士新材料贸易有限公司 | High temperature creep-resistant flake alumina porous ceramic used for LED lamp heat dissipation, and preparation method thereof |
| CN105350080B (en) * | 2015-11-23 | 2017-10-13 | 东莞华晶粉末冶金有限公司 | A kind of silicon carbide compound whisker and preparation method thereof, composite |
| CN106045483A (en) * | 2016-05-31 | 2016-10-26 | 合肥正浩机械科技有限公司 | High-corrosion-resistance metal ceramic sealing ring and preparation method thereof |
| CN107162573A (en) * | 2017-06-29 | 2017-09-15 | 铜陵市永创变压器电子有限公司 | A kind of crystal oscillator encapsulation enhanced alumina ceramic composite material of Zirconium oxide fibre samarium oxide and preparation method thereof |
| CN110655080B (en) * | 2019-10-25 | 2022-08-05 | 山东大学 | Non-oxidation Ti with function of selectively killing cancer cells 3 C 2 Quantum dot and preparation method and application thereof |
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