CN100474440C - 磁性存储器件和方法 - Google Patents

磁性存储器件和方法 Download PDF

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Publication number
CN100474440C
CN100474440C CNB031360440A CN03136044A CN100474440C CN 100474440 C CN100474440 C CN 100474440C CN B031360440 A CNB031360440 A CN B031360440A CN 03136044 A CN03136044 A CN 03136044A CN 100474440 C CN100474440 C CN 100474440C
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CN
China
Prior art keywords
layer
magnetic
orientation
ferromagnetic
reference layer
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Expired - Lifetime
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CNB031360440A
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English (en)
Chinese (zh)
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CN1487524A (zh
Inventor
M·沙马
L·T·特兰
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1487524A publication Critical patent/CN1487524A/zh
Application granted granted Critical
Publication of CN100474440C publication Critical patent/CN100474440C/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H01F10/3277—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets by use of artificial ferrimagnets [AFI] only

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
CNB031360440A 2002-07-15 2003-05-15 磁性存储器件和方法 Expired - Lifetime CN100474440C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/196,877 US6850433B2 (en) 2002-07-15 2002-07-15 Magnetic memory device and method
US10/196877 2002-07-15

Publications (2)

Publication Number Publication Date
CN1487524A CN1487524A (zh) 2004-04-07
CN100474440C true CN100474440C (zh) 2009-04-01

Family

ID=29780188

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031360440A Expired - Lifetime CN100474440C (zh) 2002-07-15 2003-05-15 磁性存储器件和方法

Country Status (5)

Country Link
US (1) US6850433B2 (enExample)
EP (1) EP1383133A1 (enExample)
JP (1) JP2004064073A (enExample)
CN (1) CN100474440C (enExample)
TW (1) TWI308751B (enExample)

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JP3788964B2 (ja) 2002-09-10 2006-06-21 株式会社東芝 磁気ランダムアクセスメモリ
JP2004165451A (ja) * 2002-11-13 2004-06-10 Sony Corp 磁気記憶素子及び磁気記憶素子の記録方法
US6944053B2 (en) * 2003-06-17 2005-09-13 Hewlett-Packard Development Company, L.P. Magnetic memory with structure providing reduced coercivity
US7145795B2 (en) 2004-04-13 2006-12-05 Micron Technology, Inc. Multi-cell resistive memory array architecture with select transistor
US20070191736A1 (en) * 2005-10-04 2007-08-16 Don Alden Method for loading penetrating members in a collection device
KR100809724B1 (ko) * 2007-03-02 2008-03-06 삼성전자주식회사 터널링층을 구비한 바이폴라 스위칭 타입의 비휘발성메모리소자
US8659852B2 (en) 2008-04-21 2014-02-25 Seagate Technology Llc Write-once magentic junction memory array
US7852663B2 (en) * 2008-05-23 2010-12-14 Seagate Technology Llc Nonvolatile programmable logic gates and adders
US7855911B2 (en) * 2008-05-23 2010-12-21 Seagate Technology Llc Reconfigurable magnetic logic device using spin torque
US7881098B2 (en) * 2008-08-26 2011-02-01 Seagate Technology Llc Memory with separate read and write paths
US7985994B2 (en) 2008-09-29 2011-07-26 Seagate Technology Llc Flux-closed STRAM with electronically reflective insulative spacer
US8169810B2 (en) 2008-10-08 2012-05-01 Seagate Technology Llc Magnetic memory with asymmetric energy barrier
US8089132B2 (en) 2008-10-09 2012-01-03 Seagate Technology Llc Magnetic memory with phonon glass electron crystal material
US8039913B2 (en) * 2008-10-09 2011-10-18 Seagate Technology Llc Magnetic stack with laminated layer
US7880209B2 (en) * 2008-10-09 2011-02-01 Seagate Technology Llc MRAM cells including coupled free ferromagnetic layers for stabilization
US20100102405A1 (en) * 2008-10-27 2010-04-29 Seagate Technology Llc St-ram employing a spin filter
US8045366B2 (en) 2008-11-05 2011-10-25 Seagate Technology Llc STRAM with composite free magnetic element
US8043732B2 (en) 2008-11-11 2011-10-25 Seagate Technology Llc Memory cell with radial barrier
US7826181B2 (en) * 2008-11-12 2010-11-02 Seagate Technology Llc Magnetic memory with porous non-conductive current confinement layer
US8289756B2 (en) 2008-11-25 2012-10-16 Seagate Technology Llc Non volatile memory including stabilizing structures
US8037235B2 (en) * 2008-12-18 2011-10-11 Mosaid Technologies Incorporated Device and method for transferring data to a non-volatile memory device
US7826259B2 (en) 2009-01-29 2010-11-02 Seagate Technology Llc Staggered STRAM cell
US7999338B2 (en) 2009-07-13 2011-08-16 Seagate Technology Llc Magnetic stack having reference layers with orthogonal magnetization orientation directions
JP5526707B2 (ja) * 2009-10-27 2014-06-18 ソニー株式会社 情報記憶素子の駆動方法
EP2575135B1 (en) * 2011-09-28 2015-08-05 Crocus Technology S.A. Magnetic random access memory (MRAM) cell and method for reading the MRAM cell using a self-referenced read operation
US9583696B2 (en) 2014-03-12 2017-02-28 Qualcomm Incorporated Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction
US9825217B1 (en) * 2016-05-18 2017-11-21 Samsung Electronics Co., Ltd. Magnetic memory device having cobalt-iron-beryllium magnetic layers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
JP3691898B2 (ja) * 1996-03-18 2005-09-07 株式会社東芝 磁気抵抗効果素子、磁気情報読み出し方法、及び記録素子
JP3957817B2 (ja) * 1997-06-12 2007-08-15 キヤノン株式会社 磁性薄膜メモリ及びその記録再生方法
US5936293A (en) * 1998-01-23 1999-08-10 International Business Machines Corporation Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
US5953248A (en) * 1998-07-20 1999-09-14 Motorola, Inc. Low switching field magnetic tunneling junction for high density arrays
US6165803A (en) * 1999-05-17 2000-12-26 Motorola, Inc. Magnetic random access memory and fabricating method thereof
US6436526B1 (en) * 1999-06-17 2002-08-20 Matsushita Electric Industrial Co., Ltd. Magneto-resistance effect element, magneto-resistance effect memory cell, MRAM and method for performing information write to or read from the magneto-resistance effect memory cell
US6166948A (en) 1999-09-03 2000-12-26 International Business Machines Corporation Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers
JP2001196658A (ja) 2000-01-07 2001-07-19 Fujitsu Ltd 磁気素子及び磁気記憶装置
JP2002074937A (ja) * 2000-09-01 2002-03-15 Canon Inc 磁気薄膜メモリ及びその製造方法
US6576969B2 (en) * 2001-09-25 2003-06-10 Hewlett-Packard Development Company, L.P. Magneto-resistive device having soft reference layer
US6795281B2 (en) * 2001-09-25 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto-resistive device including soft synthetic ferrimagnet reference layer
US6538917B1 (en) * 2001-09-25 2003-03-25 Hewlett-Packard Development Company, L.P. Read methods for magneto-resistive device having soft reference layer
US6593608B1 (en) * 2002-03-15 2003-07-15 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having double tunnel junction

Also Published As

Publication number Publication date
TWI308751B (en) 2009-04-11
US6850433B2 (en) 2005-02-01
EP1383133A1 (en) 2004-01-21
CN1487524A (zh) 2004-04-07
TW200401290A (en) 2004-01-16
US20040008537A1 (en) 2004-01-15
JP2004064073A (ja) 2004-02-26

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C06 Publication
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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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Owner name: SAMSUNG ELECTRONICS CO., LTD

Free format text: FORMER OWNER: HEWLETT-PACKARAD DEVELOPMENT INC.

Effective date: 20071228

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20071228

Address after: Gyeonggi Do, South Korea

Applicant after: SAMSUNG ELECTRONICS Co.,Ltd.

Address before: Texas, USA

Applicant before: Hewlett-Packard Development Co.,L.P.

C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20090401

CX01 Expiry of patent term