CN100470781C - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
- Publication number
- CN100470781C CN100470781C CNB2006100747015A CN200610074701A CN100470781C CN 100470781 C CN100470781 C CN 100470781C CN B2006100747015 A CNB2006100747015 A CN B2006100747015A CN 200610074701 A CN200610074701 A CN 200610074701A CN 100470781 C CN100470781 C CN 100470781C
- Authority
- CN
- China
- Prior art keywords
- wiring
- semiconductor device
- dielectric film
- semiconductor chip
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 232
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000011521 glass Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 55
- 238000005530 etching Methods 0.000 claims description 35
- 229920005989 resin Polymers 0.000 claims description 23
- 239000011347 resin Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 9
- 230000008929 regeneration Effects 0.000 claims description 7
- 238000011069 regeneration method Methods 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 4
- 230000011218 segmentation Effects 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 2
- 239000010408 film Substances 0.000 description 68
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000003822 epoxy resin Substances 0.000 description 10
- 229920000647 polyepoxide Polymers 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 9
- 239000004411 aluminium Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000007767 bonding agent Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- -1 silk screen printing Chemical compound 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002120369 | 2002-04-23 | ||
| JP2002120369 | 2002-04-23 | ||
| JP2002185749 | 2002-06-26 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB031229913A Division CN1257550C (zh) | 2002-04-23 | 2003-04-23 | 半导体装置及其制造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1855469A CN1855469A (zh) | 2006-11-01 |
| CN100470781C true CN100470781C (zh) | 2009-03-18 |
Family
ID=37195490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100747015A Expired - Lifetime CN100470781C (zh) | 2002-04-23 | 2003-04-23 | 半导体装置及其制造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5238985B2 (enrdf_load_stackoverflow) |
| CN (1) | CN100470781C (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009032929A (ja) * | 2007-07-27 | 2009-02-12 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| CN102339844A (zh) * | 2011-10-08 | 2012-02-01 | 江阴长电先进封装有限公司 | 无硅通孔低成本图像传感器封装结构的实现方法 |
| CN102339843A (zh) * | 2011-10-08 | 2012-02-01 | 江阴长电先进封装有限公司 | 无硅通孔低成本图像传感器封装结构 |
| CN118248567A (zh) * | 2022-12-23 | 2024-06-25 | 华润润安科技(重庆)有限公司 | 半导体结构的制造方法及半导体结构 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IL123207A0 (en) * | 1998-02-06 | 1998-09-24 | Shellcase Ltd | Integrated circuit device |
| JP4230543B2 (ja) * | 1998-03-16 | 2009-02-25 | エヌエックスピー ビー ヴィ | 「チップサイズパッケージ」を有する半導体装置の製造方法 |
| JP3839271B2 (ja) * | 2001-05-01 | 2006-11-01 | 富士写真フイルム株式会社 | 固体撮像装置及びその製造方法 |
-
2003
- 2003-04-23 CN CNB2006100747015A patent/CN100470781C/zh not_active Expired - Lifetime
-
2009
- 2009-09-03 JP JP2009203621A patent/JP5238985B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP5238985B2 (ja) | 2013-07-17 |
| CN1855469A (zh) | 2006-11-01 |
| JP2010016395A (ja) | 2010-01-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20090318 |
|
| CX01 | Expiry of patent term |