CN100468780C - 一种nrom闪存单元的制备方法 - Google Patents
一种nrom闪存单元的制备方法 Download PDFInfo
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- CN100468780C CN100468780C CNB2006100121887A CN200610012188A CN100468780C CN 100468780 C CN100468780 C CN 100468780C CN B2006100121887 A CNB2006100121887 A CN B2006100121887A CN 200610012188 A CN200610012188 A CN 200610012188A CN 100468780 C CN100468780 C CN 100468780C
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CNB2006100121887A CN100468780C (zh) | 2006-06-09 | 2006-06-09 | 一种nrom闪存单元的制备方法 |
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CNB2006100121887A CN100468780C (zh) | 2006-06-09 | 2006-06-09 | 一种nrom闪存单元的制备方法 |
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CN1870298A CN1870298A (zh) | 2006-11-29 |
CN100468780C true CN100468780C (zh) | 2009-03-11 |
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CNB2006100121887A Expired - Fee Related CN100468780C (zh) | 2006-06-09 | 2006-06-09 | 一种nrom闪存单元的制备方法 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101252083B (zh) * | 2008-03-25 | 2012-07-04 | 上海宏力半导体制造有限公司 | 多晶硅栅表面的清洗方法 |
WO2010079389A1 (en) * | 2009-01-12 | 2010-07-15 | Nxp B.V. | Semiconductor device and method of manufacturing a semiconductor device |
CN102194849B (zh) * | 2010-03-12 | 2013-08-07 | 北京大学 | 一种融入了阻变材料的多位快闪存储器 |
CN102769032B (zh) * | 2012-07-04 | 2015-04-08 | 上海华力微电子有限公司 | 一种具有低操作电压的nrom结构器件 |
CN105990344B (zh) * | 2015-02-28 | 2018-10-30 | 北大方正集团有限公司 | 一种cmos集成电路 |
CN106298963A (zh) * | 2016-10-24 | 2017-01-04 | 上海华力微电子有限公司 | Sonos器件结构及形成该器件的方法 |
CN113921612A (zh) * | 2021-10-09 | 2022-01-11 | 广东省大湾区集成电路与系统应用研究院 | 一种背栅调制器件及其制备方法、存储器、逻辑器件 |
CN117295341A (zh) * | 2023-09-28 | 2023-12-26 | 北京大学 | 铁电非易失存储器及制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1399331A (zh) * | 2001-07-27 | 2003-02-26 | 旺宏电子股份有限公司 | 氮化物只读存储器及其制造方法 |
CN1435868A (zh) * | 2002-01-30 | 2003-08-13 | 旺宏电子股份有限公司 | 低栅极空乏现象的mos晶体管的制作方法 |
CN1527398A (zh) * | 2003-03-06 | 2004-09-08 | 北京大学 | 一种组合栅场效应晶体管 |
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- 2006-06-09 CN CNB2006100121887A patent/CN100468780C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1399331A (zh) * | 2001-07-27 | 2003-02-26 | 旺宏电子股份有限公司 | 氮化物只读存储器及其制造方法 |
CN1435868A (zh) * | 2002-01-30 | 2003-08-13 | 旺宏电子股份有限公司 | 低栅极空乏现象的mos晶体管的制作方法 |
CN1527398A (zh) * | 2003-03-06 | 2004-09-08 | 北京大学 | 一种组合栅场效应晶体管 |
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CN1870298A (zh) | 2006-11-29 |
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