CN100466290C - 场效应晶体管制造方法 - Google Patents

场效应晶体管制造方法 Download PDF

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CN100466290C
CN100466290C CNB2003801024198A CN200380102419A CN100466290C CN 100466290 C CN100466290 C CN 100466290C CN B2003801024198 A CNB2003801024198 A CN B2003801024198A CN 200380102419 A CN200380102419 A CN 200380102419A CN 100466290 C CN100466290 C CN 100466290C
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罗尔夫·克嫩坎普
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Abstract

本发明涉及场效应晶体管，其中在源极触点及漏极触点之间设有至少一个垂直定向的、其直径在纳米范围上的半导体柱，在保持一个绝缘距离的情况下该半导体柱被栅极触点环形地包围。本发明提出一种简化的制造方法。所制造的晶体管被这样地构成：半导体柱(2)被埋在第一及第二绝缘层(3，5)中，在这些绝缘层之间设有一个作为栅极触点的、向外导出的金属层(4)，该金属层的向上穿过第二绝缘层(5)露出的端部被部分地转换成绝缘体(6)或部分地被去除及通过绝缘材料填充。

Description

场效应晶体管制造方法
本发明涉及一种场效应晶体管，其中在源极触点及漏极触点之间设有至少一个垂直定向的、其直径在纳米范围(纳米线)上的半导体柱(
Figure C200380102419D0004095006QIETU
)，在保持一个绝缘距离的情况下该半导体柱被栅极触点环形地包围，及涉及用于该场效应晶体管的制造方法。
已公知了薄层晶体管，其中半导体材料以平面布置被施加在柔性的衬底上。但由于衬底的机械应力半导体易于从衬底上脱离或导致其它的损坏及由此导致功能失效。
已有人提出，以纳米尺度来制造晶体管，其方式是，在由两个塑料薄膜及处于中间的金属层组成的薄膜复合体中借助离子轰击开出离子轨迹沟道，这些沟道由此对于随后的蚀刻很敏感。在蚀刻出的微孔中借助电子淀积或化学槽沉积注入半导体材料。通过接着的薄膜复合体上侧及下侧的金属化构成源极及漏极触点。中间的金属化薄膜用作栅极触点。
这种晶体管的圆柱形垂直结构具有其优点，即它们在机械上非常强健，因为薄膜可弯曲并可扭转。此外有机的薄膜材料实质地比无机的半导体材料软。由此出现的弯曲力、剪切力及压力几乎完全由薄膜材料接收，以使得在弯曲力、剪切力及拉力作用下晶体管特性曲线及其它电参数很大程度上地恒定。
因为可制造出小到30nm的微孔及可用半导体材料填充，对于纳米尺度上的晶体管也可无需光刻及无需掩模来制造。
通过半导体材料沉积类型在该方法中有条件地形成多晶的半导体柱。并且半导体柱的长度对其直径的比例受到微孔内的必需的晶体生长的限制。总地该用于制造晶体管的方法仍太昂贵，因为离子轰击迄今仅在可选的科学装置中进行。
本发明的任务在于，提出一种开始部分所述类型的场效应晶体管，它也可用单晶半导体柱来制造，其中无需离子照射也能够实现。为此应给出适合的、简单的、对于其制造工业上可应用的方法。
据此，半导体柱被埋在第一及第二绝缘层中，在这些绝缘层之间有一个作为栅极触点的、向外导出的金属层。该金属层的向上穿过第二绝缘层露出的端部被部分地转换成绝缘体或部分地被去除并通过一个绝缘材料填充。
这种晶体管可用以下方法步骤来制造：
-在一个导电衬底上垂直地生长独立式(freistehende)的半导体柱，
-在这些半导体柱上施加一个第一绝缘层，
-在该第一绝缘层上接着施加一个第一导电金属层及一个第二绝缘层，
-将形成的层体在这样的程度上被平面蚀刻，以使得该第一导电金属层的覆盖这些半导体柱的部分又被去除，
-将该穿过该层体表面的金属层的端部专门针对金属地进行返回蚀刻()并在该层体上施加一个第三绝缘层，接着将该层体重新进行平面蚀刻，
或
将该穿过该层体表面的金属层的端部通过氧化或氮化转换成绝缘体，
-接着在该层体上施加一个第二金属层。
该晶体管相对迄今的垂直纳米晶体管具有以下优点：
-该场效应晶体管的结构允许极高的封装密度及极小的尺寸，且无需使用光刻方法；
-所使用的衬底可以是硬性的或柔性的；
-对于制造不是绝对需要离子照射
-该方法现在允许半导体柱单晶地生长。基于单晶半导体的晶体管比多晶的半导体的晶体管具有更高的开关速度。
以下将借助实施例来详细地描述本发明。附图中表示：
图1：用于制造根据本发明的场效应晶体管的第一方法步骤-在一个金属导电衬底上生长独立式的半导体柱，
图2：第二方法步骤-施加第一绝缘层，
图3：第三及第四方法步骤-施加第一金属层及第二绝缘层，
图4：第五方法步骤-平面蚀刻，
图5：第六方法步骤-金属层向上伸出的端部的绝缘，
图6：第七方法步骤-施加第二金属层，制成的晶体管结构的横截面图，
图7：通过该方法可制造的晶体管阵列的横截面图。
如图1中所示，在一个可为柔性的或坚固的导电衬底1上首先生长垂直地独立式的半导体柱2。这里可使用一个无序的工序，如由文献Thin Film Deposition on Free-standingZnO Columns，etal.，Appl.Phys.Lett.77，No 16(16.October 2000)，2275-2277(“独立式的ZnO柱上的薄膜沉积”，
Figure C200380102419D0006095119QIETU
等著，Appl.Phys.Lett.77，No16(2000年10月16日)，第2275-2277页)公知的ZnO柱的电化学生长。对此变换地，也可通过蒸发Zn或ZnO来施加ZnO，见文献Seung Chu Lyu etal.，Low Temperature Growth of Zno Nano-wire ArrayUsing Vapour Deposition Method，Chemistry of Materials to be published(“使用汽相淀积方法的ZnO纳米线阵列的低温生长”，Seung ChuLyu等人著，待出版的Chemistry of Materials)。但也可这样来预制备一个衬底，即用有序的或无序的方式形成成核籽晶(Nukleationskeime)，在该籽晶上开始柱的生长。作为无序的成核籽晶例如对于ZnO柱的生长采用Ni搀杂物，见上述文献；或对于C60-纳米管的垂直生长采用Ni搀杂物，见文献Teo etal.，NanotechConference，Santiago deCompostela，September 9-13，2002-10-09(纳米技术会议，Teo等人的报告，Santiago de Compostela，9月9-13日，2002-10-09)，图d。有序的成核籽晶可通过光刻方法来产生，见上述文献，或通过非光刻方法、例如通过在错定位的晶体面上的位错级来产生。在非光刻产生成核籽晶的情况下极大地取消了由光刻产生的量值限制。柱的生长仅通过成核籽晶的量值预给定。但半导体柱也可在聚合物膜的被蚀刻出的离子轨迹沟道中制造。如果接着去除薄膜材料，同样可形成独立式的半导体柱，见文献Engelhardt，，Electrodeposition of Compound Semiconductors in PolymerChannels of100nm Diameter，J.Appl.Phys.，90，No 8(15.October 2002)，4287-4289(“在100nm直径的聚合物沟道中化合物半导体的电淀积”，Engelhardt，
Figure C200380102419D0007095204QIETU
著，J.Appl.Phys.Lett.90，No 8(2002年10月15日)，第4287-4289页)。
在衬底上生长半导体柱(纳米纤维/纳米管)迄今主要对于用于电子场致发射器件、发光二极管及具有极薄的吸收层的太阳能电池的制造具有重要意义。
除了所述的用于半导体柱的材料外也可考虑其它材料，如GaP，见文献Gudiksen/Lieber，Diameter-Selective Semiconductor Nanowires，J.Am.(“直径选择的半导体纳米线”，Gudiksen/Lieber著，J.Am.Chem.Soc.122(2000年)，第8801-8802页)；InAs，InP，CdTe等材料。
在半导体柱2生长后施加一个绝缘层3，如图2所示。该层的施加可通过聚合物的旋涂或通过蒸发、CVD(化学汽相淀积)或其它的用于产生如氧化物或氮化物的绝缘层的已知方法来实现。
绝缘层3也覆盖半导体柱1的侧面。在该绝缘层上通过溅射、蒸发、CVD或类似方法施加第一导电金属层4，以后该金属层将构成晶体管的栅极触点。接着再施加另一绝缘层5(图3)，及对这样形成的层体的上部分进行平面蚀刻(图4)。这可通过水平的离子束来实现(离子束蚀刻)或通过等离子蚀刻或化学蚀刻或电化学蚀刻方法来实现，正如由半导体技术已充分公知的。接着使从层序列中向上露出的金属层4的端部绝缘(图5)。这可这样地进行，即在金属专用的蚀刻步骤中，使露出在表面上的金属返回蚀刻并施加另一绝缘层，然后将其平面化。对此变换地，如图5中所示，露出在表面上的金属通过化学氧化或氮化被转换成一个绝缘体6。接着施加第二金属层7(图6)。该金属层与半导体柱形成电接触及在以后作为源极触点或漏极触点。
在起栅极触点作用的中间接触区域中，在半导体柱2的外侧上形成一个沟道8，当半导体柱2足够细时，该沟道也可延伸在柱的整个厚度上。
图7中表示一个晶体管阵列。栅极触点总是环形地包围半导体柱2及由此与它完全相关。所有触点(源极，漏极，栅极)可作为阵列被控制或借助光刻方法来划分。这种阵列尤其可应用在电路或显示器中。在显示器中将由几百个晶体管组成一个光像素(Pixel)。
借助该方法可制造具有其直径为10至500nm数量级的半导体柱的晶体管。半导体柱的高度在相同范围内。在直径非常小的情况下晶体管可以在量子等级工作。
参考标号表
1    衬底
2    半导体柱
3    绝缘层
4    金属层
5    绝缘层
6    绝缘体
7    金属层
8    沟道

Claims (8)

1.制造场效应晶体管的方法，其中在一个源极触点及一个漏极触点之间有至少一个垂直定向的、其直径在纳米范围上的半导体柱，在保持一个绝缘距离的情况下该半导体柱被一个栅极触点环形地包围，其特征在于：
-在一个导电衬底上垂直地生长独立式的半导体柱，
-在这些半导体柱上施加一个第一绝缘层，
-在该第一绝缘层上接着施加一个第一导电金属层及一个第二绝缘层，
-将形成的层体在这样的程度上被平面蚀刻，以使得该第一导电金属层的覆盖这些半导体柱的部分又被去除，
-将该穿过该层体表面的金属层的端部专门针对金属地进行返回蚀刻并在该层体上施加一个第三绝缘层，接着将该层体重新进行平面蚀刻，
或
将该穿过该层体表面的金属层的端部通过氧化或氮化转换成绝缘体，
-接着在该层体上施加一个第二金属层。
2.根据权利要求1的方法，其特征在于：该层体或各个层借助光刻方法被划分成一些单个的阵列。
3.根据权利要求1或2的方法，其特征在于：这些半导体柱的生长是以电化学方式来进行的。
4.根据权利要求1或2的方法，其特征在于：这些半导体柱的生长是通过溅射来进行的。
5.根据权利要求1或2的方法，其特征在于：这些半导体柱的生长是通过CVD方法来进行的。
6.根据权利要求1或2的方法，其特征在于：这些半导体柱的生长是通过蒸发来进行的。
7.根据权利要求1或2的方法，其特征在于：这些半导体柱的生长是在成核籽晶上进行的。
8.根据权利要求1或2的方法，其特征在于：这些半导体柱的生长是在聚合物薄膜的离子轨迹沟道中进行的，接着再去除该聚合物薄膜。
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