CN100464199C - 1550 nanometer wavelength silicon reflection type polarized beam splitting optical grating - Google Patents
1550 nanometer wavelength silicon reflection type polarized beam splitting optical grating Download PDFInfo
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Abstract
The invention provides a 1550nm wavelength silicon reflective polarization beam splitting raster. When the TM polarized light and TE polarized light are reflected respectively at level 0 and 1, the duty ratio of the raster is 0.5, the cycle of the raster is 344-412 nm, and the erosion depth is 1.076-1.205 micrometer, the extinction ratio of the polarization beam splitting raster is more than 100, and two lights with polarization modes vertical to each other can be divided to emit at different directions.
Description
Technical field
The present invention relates to polarization beam-splitting grating, particularly a kind of 1550 nanometer wavelength silicon reflection type polarized beam splitting optical gratings.
Background technology
At optical communication field, polarization beam apparatus is a kind of optical element of key, and it can realize light is divided into the orthogonal polarized light in two bundle polarization directions.During great majority are used, but people often need the operating wavelength range of High Extinction Ratio, high-diffraction efficiency, broad and angle bandwidth, polarization beam apparatus that volume is little.Traditional polarization beam apparatus is based on the natural birefringence effect (for example Thomson prism, Nicol prism and Wollaston prism) of some crystal or the polarization selectivity of multilayer dielectric film.But, utilizing the made polarization beam apparatus of birefringece crystal, volume is big, costs an arm and a leg; And film polarization beam apparatus general work bandwidth is less, and the film number of plies reaches tens layers, homogeneity and symmetry is required tighter, and processing is difficult, and the cost of High Extinction Ratio element is very high.Along with the fast development of micro-fabrication technology, the peculiar optical effect that sub-wave length grating shows gets more and more people's extensive concerning.Recently, some research work have reported that surface relief type grating is as polarization beam apparatus.Compare with other polarization beam apparatus, the compact conformation of surface relief type polarization beam-splitting grating is easy to miniaturization and integrated, and the insertion loss is little, is a kind of passive device.The extinction ratio of the 1550nm quartz polarization beam splitting optical grating of making as people such as Bo Wang can reach 5.11 * 10 in theory
3, TM polarized light 0 order diffraction efficient is 98.62%, TE polarized light 1 order diffraction efficient is 88.52%[referring to technology 1:B.Wang et al. formerly, Opt.Lett.32.1299 (2007)].
Silicon has high temperature resistant preferably and radiation resistance as one of the abundantest material of storage on the earth, special suitable for making high power device, thereby become the maximum a kind of semiconductor material of application.The elemental silicon of fusion silicon atom when solidifying is arranged in many nucleus with diamond lattice, if these nucleus grow up to the identical crystal grain of high preferred orientation, just then these crystal grain parallel junction crystallize into silicon altogether.Silicon also claims silicon single crystal, is basic material in the electronic information material, has been penetrated into national economy and science and techniques of defence every field, and what semiconductor devices in the current electronic communication semi-conductor market more than 95% and 99% above integrated circuit were used all is silicon.Thereby, make deep erosion grating with silicon, it is convenient and cheap to draw materials, and high temperature resistant radioresistance can be worked in high intensity laser beam and some special environment, has important Practical significance.In addition, the manufacturing of polarization beam-splitting grating can be by the microelectronic process engineering of maturation, and cost is little, can produce in enormous quantities, and the surface relief type polarization beam-splitting grating that its extinction ratio and diffraction efficiency have been reported more all wants high.So this novel silicon reflecting polarization beam splitting grating is low than other surface relief type polarization beam-splitting grating costs, commercial production preferably has important practical prospect.
It is to utilize the deep etching technique of microelectronics that rectangle loses grating deeply, and what process in substrate has a grating than deep trouth shape.Because the etching depth of surface etch grating is darker, so diffraction property is similar to body grating, has the Bragg diffraction effect of body grating, this point is different fully with common surperficial light engraving erosion plane grating.The high density rectangle loses the grating diffration theory deeply, can not be explained by simple scalar optical grating diffraction equation, and must adopt the Maxwell equation of vector form and in conjunction with boundary condition, accurately calculate the result by calculation of coding machine program.People such as Moharam have provided the algorithm [formerly technology 2:M.G.Moharam etal., J.Opt.Soc.Am.A.12,1077 (1995)] of rigorous coupled wave theory, can solve the diffraction problem of this class high dencity grating.But as far as we know, so far, also have no talent and provide the design parameter of high-density deeply etched silicon reflection type polarized beam splitting optical grating at the infrared light of 1550 nano wave lengths commonly used.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of 1550 nanometer wavelength silicon reflection type polarized beam splitting optical gratings at the infrared light of using 1550 nano wave lengths always, this grating can be divided into different directions with two kinds of orthogonal light of polarization mode of TM, TE, realize 0 grade and 1 order diffraction light extinction ratio greater than 100,0 grade of reflection diffraction efficiency of TM polarized light and 1 grade of reflection diffraction efficiency of TE polarized light are higher than 99.05% and 99.04% respectively.Thereby can realize the dark etch silicon reflecting polarization beam splitting grating of High Extinction Ratio, high-diffraction efficiency having important Practical significance.
Technical solution of the present invention is as follows:
A kind of silicon reflecting polarization beam splitting grating that is used for 1550 nano wavebands, the TM polarized light of this grating and TE polarized light are respectively 0 grade and 1 grade of reflection, the dutycycle of grating is 0.5, the cycle that it is characterized in that this grating is 344-412 nanometer, etching depth 1.076-1.205 micron, and the dutycycle of grating is 0.5.
The cycle of described 1550 nanometer wavelength silicon reflection type polarized beam splitting optical gratings is 397 nanometers, and the etching depth of grating is 1.092 microns.
Foundation of the present invention is as follows:
Fig. 1 has shown that the high density rectangle loses the geometry of silicon grating deeply. Zone 1,2 all is uniformly, is respectively air (refractive index n
1=1) and silicon (refractive index n
2=3.47694).Grating vector K is positioned at plane of incidence.The TM polarized incident light corresponding to the direction of vibration of magnetic vector perpendicular to the plane of incidence, the TE polarized incident light corresponding to the direction of vibration of electric field intensity perpendicular to the plane of incidence.The light wave of linear polarization is θ at a certain angle
i=sin
-1(λ/(2* Λ * n
2)) incident (being defined as the Littrow condition), λ represents incident wavelength, and eight represent the grating cycle.The extinction ratio of this polarization beam-splitting grating is defined as the smaller value in the ratio of TE, TM polarization mode diffraction efficiency in the ratio of TM in 0 grade of reflection diffracting light, TE polarization mode diffraction efficiency and the 1 grade of reflection diffracting light.
Under optical grating construction as shown in Figure 1, the present invention adopts rigorous coupled wave theory [formerly technology 2] to calculate extinction ratio and the diffraction efficiency of high-density deeply etched silicon grating (dutycycle is 0.5) at infrared light 1550 nano wavebands.Obtain the numerical optimization result of High Extinction Ratio, high-diffraction efficiency rectangular raster according to Theoretical Calculation, as shown in Figure 2, promptly when the cycle of grating be the 344-412 nanometer, when etching depth is the 1.076-1.205 micron, the extinction ratio of polarization beam-splitting grating is greater than 100, and 0 grade of reflection diffraction efficiency of TM polarized light and 1 grade of reflection diffraction efficiency of TE polarized light are higher than 99.05% and 99.04% respectively.Particularly the grating cycle is 397 nanometers, when etching depth is 1.092 microns, can make the extinction ratio of polarization beam-splitting grating reach 2.50 * 10
5, 0 grade of reflection diffraction efficiency of TM polarized light is 99.9996%, 1 grade of reflection diffraction efficiency of TE polarized light is 99.999999%.So high extinction ratio and diffraction efficiency makes the present invention can become a kind of very desirable polarization beam splitting device, has important Practical significance.
Shown in Fig. 3,4, the cycle of grating is 397 nanometers, the degree of depth is 1.092 microns, when if the incident light of considering near two kinds of polarization modes 1550 nanometers incides grating with the Littrow angle of correspondence separately, the extinction ratio of this polarization beam-splitting grating all wavelengths in the 1542-1558 nanometer wavelength range all can reach more than 100, promptly corresponding to the spectrum width scope of 16 nanometers, 0 grade of reflection diffraction efficiency of TM polarized light and 1 grade of reflection diffraction efficiency of TE polarized light are higher than 99.66% and 99.05% respectively.
Shown in Fig. 5,6, the incident light of TM/TE polarization mode is when inciding grating near 34.16 ° of angles (the Littrow angle when corresponding incident wavelength is 1550 nanometers), the cycle of grating is 397 nanometers, the degree of depth is 1.092 microns, the extinction ratio of this polarization beam-splitting grating all incident angles in 32.61 ° of-35.73 ° of angular ranges all can reach more than 100, promptly corresponding to 3.12 ° angle bandwidth, 0 grade of reflection diffraction efficiency of TM polarized light and 1 grade of reflection diffraction efficiency of TE polarized light are higher than 99.02% and 99.47% respectively.
Description of drawings
Fig. 1 is the geometry of the silicon reflecting polarization beam splitting grating of the present invention's 1550 nano wave lengths.
Among the figure, 1 represents zone 1, and (refractive index is n
1), 2 represent zone 2, and (refractive index is n
2), 3 represent grating, and 4 represent incident light, and 5 represent 0 order diffraction light under the TM pattern, and 6 represent 1 order diffraction light under the TE pattern.
Fig. 2 is that reflecting polarization beam splitting grating of the present invention (refractive index of silicon gets 3.47694, and the grating dutycycle is 0.5) is at the densimetric curve of the extinction ratio under different grating cycle and the etching depth under logarithmic scale.
Fig. 3 is that reflecting polarization beam splitting grating of the present invention (refractive index of silicon gets 3.47694) the grating cycle is 1.092 microns of 397 nanometers, the grating degree of depth, dutycycle is 0.5, near 1550 nano wavebands, use, when each wavelength incided grating with corresponding Littrow angle, extinction ratio was with the change curve of incident wavelength.
Fig. 4 is that reflecting polarization beam splitting grating of the present invention (refractive index of silicon gets 3.47694) the grating cycle is 1.092 microns of 397 nanometers, the grating degree of depth, dutycycle is 0.5, near 1550 nano wavebands, use, when each wavelength incided grating with corresponding Littrow angle, the reflection diffraction efficiency under the TM/TE pattern was with the change curve of incident wavelength.
Fig. 5 is that reflecting polarization beam splitting grating of the present invention (refractive index of silicon gets 3.47694) the grating cycle is 1.092 microns of 397 nanometers, the grating degree of depth, dutycycle is 0.5, incident light is when inciding grating near 34.16 ° of angles (the Littrow angle when corresponding incident wavelength is 1550 nanometers), and extinction ratio is with the change curve of incident angle.
Fig. 6 is that reflecting polarization beam splitting grating of the present invention (refractive index of silicon gets 3.47694) the grating cycle is 1.092 microns of 397 nanometers, the grating degree of depth, dutycycle is 0.5, incident light is when inciding grating near 34.16 ° of angles (the Littrow angle when corresponding incident wavelength is 1550 nanometers), and the reflection diffraction efficiency under the TM/TE pattern is with the change curve of incident angle.
Fig. 7 is the holographic grating recording beam path.
7 represent helium cadmium laser among the figure, and 8 represent shutter, and 9 represent beam splitter, and 10,11,12,13 represent catoptron, and 14,15 represent beam expanding lens, and 16,17 represent lens, and 18 represent substrate.
Embodiment
Utilize the micro-optic technology to make high density rectangle polarization beam-splitting grating, deposition layer of metal chromium film on the silicon chip of dry, cleaning at first, and on the chromium film, evenly be coated with the last layer positive photoetching rubber (Shipley, S1818, USA).Adopt the holographic recording mode to write down the grating (see figure 7) then, adopt He-Cd laser instrument 7 (wavelength is 441 nanometers) as recording light source.During the recording holographic grating, shutter 8 is opened, and the arrow beam of light that sends from laser instrument is divided into two arrow beam of lights through beam splitter 9.A branch of by behind the catoptron 10, form wide plane wave through beam expanding lens 14, lens 16; Another bundle forms wide plane wave by behind the catoptron 11 through beam expanding lens 15, lens 17.After two bundle plane waves pass through catoptron 12,13 respectively, on substrate 18, form interference field with 2 θ angles.Grating space periodic (being the spacing of adjacent stripes) can be expressed as Λ=λ/(2*sin θ), and wherein λ is the recording light wavelength.Angle θ is big more for record, and then Λ is more little, so by changing the size of θ, can control the cycle (periodic quantity can be designed by above-mentioned extinction ratio and efficiency diagram) of grating.The holographic recording high dencity grating develops then, then spends chrome liquor again photoengraving pattern is transferred on the chromium film from photoresist, utilizes chemical reagent that unnecessary photoresist is removed.At last, sample is put into the plasma etching that inductively coupled plasma etching machine carries out certain hour, grating is transferred on the silicon chip, spend chrome liquor more remaining chromium film is removed, just obtain the silicon grating of high-density deeply etched surface relief structure.
Table 1 has provided a series of embodiment of the present invention, in the process of making grating, suitably selects grating etching depth and cycle, just can get the rectangle silicon polarization beam-splitting grating of High Extinction Ratio, high-diffraction efficiency.By table 1 and as can be known in conjunction with Fig. 2, the cycle of this grating is the 344-412 nanometer, when etching depth is the 1.076-1.205 micron, the extinction ratio of polarization beam-splitting grating is greater than 100,0 grade of reflection diffraction efficiency of TM polarized light and 1 grade of reflection diffraction efficiency of TE polarized light are higher than 99.05% and 99.04% respectively, have realized two kinds of orthogonal light of polarization mode are divided into different directions.Particularly the grating cycle is 397 nanometers, and when etching depth was 1.092 microns, the present invention can make the extinction ratio of polarization beam-splitting grating reach 2.50 * 10
5, 0 grade of reflection diffraction efficiency of TM polarized light is 99.9996%, 1 grade of reflection diffraction efficiency of TE polarized light is 99.999999%.
High-density silicon reflection grating of the present invention is as polarization beam apparatus, have high extinction ratio and diffraction efficiency, it is a kind of very desirable polarization beam splitting device, utilize holographic grating recording technique or direct electronic beam write device in conjunction with the deep etching technique of microelectronics, can be in enormous quantities, produce at low cost, grating stable performance after the etching, reliable is a kind of important realization technology of polarization beam apparatus, has important practical prospect.
Under the table 1 1550 nano wave length incidents, 0 grade ,+1 grade of Bragg reflection diffraction efficiency and extinction ratio, d is the grating degree of depth, Λ is the grating cycle
Claims (2)
1. nanometer wavelength silicon reflection type polarized beam splitting optical grating, the TM polarized light of this grating and TE polarized light are respectively 0 grade and 1 grade of reflection, the dutycycle of grating is 0.5, and the cycle that it is characterized in that this grating is that 344～412 nanometers, etching depth are 1.076～1.205 microns.
2. 1550 nanometer wavelength silicon reflection type polarized beam splitting optical gratings according to claim 1, the cycle that it is characterized in that described grating is 397 nanometers, the etching depth of grating is 1.092 microns.
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| CN101515045B (en) * | 2009-04-02 | 2010-06-23 | 重庆文理学院 | Sub-wavelength metal polarization beam splitting grating for 1550 nanometer waveband |
| CN102193126B (en) * | 2011-05-26 | 2012-08-29 | 中国科学院上海光学精密机械研究所 | Boardband low electric field enhanced metal dielectric grating |
| CN103760681B (en) * | 2014-01-21 | 2017-08-25 | 国家纳米科学中心 | A kind of preparation method of micro- polarization chip arrays based on metal nano grating |
| CN104330847A (en) * | 2014-11-19 | 2015-02-04 | 上海电力学院 | Reflective broadband 1/4 wave plate |
| CN107272099B (en) * | 2017-07-14 | 2019-06-21 | 中国科学院上海光学精密机械研究所 | 1 × 5 beam-splitting optical grating of single ridge structure of TE polarization |
| CN107976666B (en) * | 2017-11-23 | 2021-08-10 | 吉林大学 | Multi-line laser radar and light emitter thereof |
| CN108919399B (en) * | 2018-06-11 | 2020-10-16 | 中山大学 | High-refractive-index contrast grating and preparation method and application thereof |
| CN111308596A (en) * | 2020-02-13 | 2020-06-19 | 中国科学院福建物质结构研究所 | Polarization beam splitting grating and manufacturing method thereof |
| CN111796356A (en) * | 2020-06-16 | 2020-10-20 | 天津大学 | All-dielectric polarization beam splitting metamaterial device and parameter calculation method thereof |
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| CN1564050A (en) * | 2004-03-19 | 2005-01-12 | 中国科学院上海光学精密机械研究所 | High density, rectangular deep etched crystal raster |
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| US6243199B1 (en) * | 1999-09-07 | 2001-06-05 | Moxtek | Broad band wire grid polarizing beam splitter for use in the visible wavelength region |
| CN1564050A (en) * | 2004-03-19 | 2005-01-12 | 中国科学院上海光学精密机械研究所 | High density, rectangular deep etched crystal raster |
| CN1588133A (en) * | 2004-07-16 | 2005-03-02 | 中国科学院上海光学精密机械研究所 | 800 nano wave band back incidence type high density quartz reflection raster |
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