CN108919399B - High-refractive-index contrast grating and preparation method and application thereof - Google Patents
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Abstract
The invention discloses a high-refractive-index contrast grating and a preparation method and application thereof, wherein the high-refractive-index contrast grating comprises: transparent substrateAnd a high-refractive-index contrast single-crystal silicon grating having high transmittance in the visible light band and covering 0 to 2πThe phase of (2) is changed. The invention adopts the monocrystalline silicon material with high refractive index contrast to design the grating, can realize low length-width ratio by reasonably designing the size, has low loss in a visible light wave band, and can prepare various functional devices with low loss in the visible light wave band, such as a deflector, a vortex light generator, a focusing lens and the like by utilizing the grating.
Description
Technical Field
The invention relates to a design method and processing of a micro-nano structure functional device, in particular to a grating with high refractive index contrast ratio and a preparation method and application thereof.
Background
Metamaterials (Metamaterials) are characterized in that a series of ordered sub-wavelength structural units are constructed on materials so as to control the macroscopic properties of the materials, so that the materials have the extraordinary physical properties which are not possessed by natural materials, and the extraordinary material functions which exceed the inherent ordinary properties of the natural world, such as negative refractive index, ultrahigh resolution imaging, invisible cloak and the like, are always the key points of attention of researchers, but the research is difficult.
The super surfaces (metassurfaces) are ultrathin two-dimensional array planes constructed by metamaterial structural units, so that the problems of high loss, complex manufacturing process, difficulty in integration and the like caused by three-dimensional metamaterials are solved, and functions and applications which are difficult to realize by the three-dimensional metamaterials are realized.
With the progress of micro-nano processing technology, the light can be regulated and controlled under the micro-nano scale. The super surface mainly based on the surface plasmon super surface is widely researched, and phase mutation is introduced to a medium interface under the sub-wavelength scale, so that the polarization of an incident beam can be controlled, and reflection focusing, holography and the like are realized. Although the surface plasmon super surface has good performance in the mid-infrared and microwave bands, when the band is shifted to the near-infrared and visible bands, the application of the surface plasmon super surface in a transmission type device is limited due to strong reflection of metal and severe ohmic loss. Researchers have further directed their eyes to low-loss all-dielectric super surfaces.
From the material perspective, the all-dielectric metamaterial can be divided into two categories according to the optical wave band: one is "high index" silicon for near infrared wavelengths and the other is "low index" oxides and nitrides for the visible region. The "high" and "low" indices of the refractive index are distinguished by whether the refractive index difference Δ n is sufficiently large compared to the refractive index of quartz glass (typically about 1.5).
Silicon is widely used in all-dielectric planar lenses, vortex light generators, holographic and nonlinear devices, etc. due to its compatibility with existing mature cmos processes. However, most researchers have fabricated amorphous silicon (α -Si) by a method of simply depositing silicon on a transparent substrate, which has high absorption loss in the visible light band and thus mainly operates in the near infrared band.
With titanium dioxide (TiO)2) The low refractive index oxide devices represented by these can work well in the visible light band, such as high Numerical Aperture (NA) lenses, achromatic lenses, holograms, and the like. But because of the low refractive index, a larger aspect ratio is required to achieve device functionality, making processing more difficult. The verticality cannot be guaranteed by adopting a top-down etching method, so that the device functionality cannot be guaranteed, and although the device functionality can be guaranteed by adopting a bottom-up Atomic Layer Deposition (ALD) method, the cost is high, the processing time is long, and the popularization and the application are difficult in practice.
Disclosure of Invention
In order to overcome the existing problems, the invention provides a high-refractivity contrast grating (HCG), which is designed by adopting a high-refractivity contrast monocrystalline silicon (c-Si) material, wherein the refractivity of the grating in a visible light waveband is over 3.7, and the high-refractivity contrast grating has high transmissivity and covers phase change of 0 to 2 pi in the visible light waveband through reasonable design of size, can realize low length-width ratio and has small loss in the visible light waveband, so that various functional devices with low loss in the visible light waveband, such as deflectors, vortex light generators, focusing lenses and the like, can be prepared by utilizing the high-refractivity contrast grating.
The invention also aims to provide a preparation method of the high-refractive-index contrast grating.
It is another object of the present invention to provide applications of the high refractive index contrast grating.
The technical scheme is as follows:
a high index contrast grating, comprising: a transparent substrate and a high-refractive-index contrast single-crystal silicon (which has a refractive index of 3.7 or more in both visible light bands) grating having a high transmittance in the visible light band and covering a phase change of 0 to 2 pi.
In one embodiment, the high-index-contrast grating has a thickness of 100nm, a width of 70nm, and a period of 300 nm.
The optical properties of HCG are related to its width, thickness and period. HCG is equivalent to a half-wave plate and the handedness of circularly polarized light passing through the structure changes, for example, left-handed light is incident and right-handed light is emitted. Rotating the HCG at a certain angle θ, the outgoing light will carry a phase of 2 θ. Similarly, when the incident light is the right-handed light, the emergent light is the left-handed light carrying the-2 theta phase. Therefore, when the HCG is rotated from 0 to π, phase modulation of 0 to 2 π can be obtained in the outgoing light. The thickness of the HCG is designed to be 100nm, and the thickness is thin, so that the absorption loss in a visible light wave band is smaller, and the transmittance is higher; the width of the HCG is designed to be 70nm, the period is 300nm, and simulation shows that when the HCG is rotated, the emergent light can still maintain high transmittance and full phase change.
In one embodiment, the high index contrast grating has a guided mode resonance with high transmission for s-polarization and no resonance for p-polarization, where the phase of incident light, Φ, for s-polarizationiAnd phase of transmitted light phitThe phase difference follows bragg modulation:
Φt-Φi＝mπ，
wherein m is 0 or a positive integer.
The preparation method of the high-refractive-index contrast grating comprises the following steps:
s1, bonding the SOI wafer to the transparent substrate;
s2, thinning the silicon substrate on the SOI sheet by a physical grinding method, and etching the grating on the silicon substrate of the SOI sheet by an inductively coupled plasma etching method;
and S3, etching the insulating layer on the SOI sheet by a chemical method to obtain monocrystalline silicon on the transparent substrate.
The high-refractive-index contrast grating is applied to a multifunctional nano device with low loss and high transmittance in a visible light wave band.
The high-refractivity contrast grating can be used for designing a multifunctional nano device with low loss and high transmittance in a visible light waveband, the device has high tolerance and is suitable for more than 100nm, and the device can be processed and realized by methods such as ultraviolet exposure, nano imprinting and the like, so that the large-scale preparation is facilitated.
In one embodiment, the multifunctional nano-device with low loss and high transmittance in a visible light wave band is a deflector, a vortex light generator and a focusing lens.
In one embodiment, the multifunctional nano device with low loss and high transmittance in the visible light band is prepared by the following preparation method: designing phase according to the function required by the device, arranging the high-refractive-index contrast grating according to a phase diagram, and finally transferring the pattern to the high-refractive-index contrast monocrystalline silicon of the transparent substrate by a photoetching method.
The phase diagram is the phase phi (x, y) required to be carried after the basic unit structure passing through different positions of the device is designed, and the corresponding phase diagram is designed according to the functional principle of the device. The pattern used in photolithography is formed by filling the phase required at different positions with corresponding elementary cells, and converting the phase image into a structured grating pattern. The invention can adopt electron beam exposure method to spin-coat electron glue on monocrystalline silicon, then evaporate conducting layer to expose, and transfer the pattern onto the electron glue successfully after developing. And transferring the pattern to the monocrystalline silicon by using the electronic glue with the pattern as a mask and adopting a top-down etching method. Methods of pattern transfer include, but are not limited to, electron beam exposure.
The invention has the beneficial effects that: according to the invention, by designing the size of the basic unit HCG, the HCG has high transmissivity and covers the phase change of 0-2 pi in a visible light wave band, a low length-width ratio can be realized, and the loss in the visible light wave band is small; the invention can design the phase according to the function needed by the device, arranges the basic unit HCG according to the phase diagram, and finally transfers the pattern to the monocrystalline silicon with high refractive index contrast of the transparent substrate by the photoetching method, thereby being capable of preparing a plurality of functional devices with low loss and high transmittance in the visible light wave band.
Drawings
Fig. 1 is a schematic diagram of the basic cell structure of a high-refractive-index-contrast grating HCG.
Fig. 2 is a schematic diagram of the basic unit structure of a high-refractive-index contrast grating HCG.
Fig. 3 is a schematic diagram of phase delay structures of eight HCG units.
FIG. 4 is a schematic view of the deflector of example 1 of the present invention.
Fig. 5 is a schematic structural diagram of a deflector in embodiment 1 of the present invention.
FIG. 6 is a schematic diagram of a vortex light generator according to embodiment 2 of the present invention.
Fig. 7 is a grating arrangement diagram of a vortex light generator structure in embodiment 2 of the present invention.
Fig. 8 is a schematic structural diagram of a vortex light generator according to embodiment 2 of the present invention.
Detailed Description
The invention provides a method for designing a micro-nano device by using a high-refractive-index contrast grating (HCG) and processing, which can realize a plurality of functional devices with low loss in a visible light wave band. The micro-nano structure designed by the method has small length-width ratio and high tolerance, and has low requirements on processing conditions.
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that two embodiments, respectively, a deflector and a vortex light generator are listed below, but the devices that can be involved in the present invention are not limited to the above two, and are also applicable to a focusing lens, a hologram, and the like.
The invention takes a one-dimensional high-refractive-index contrast grating (HCG) as a basic unit, and FIG. 1 shows a structural schematic diagram of the basic unit HCG, which comprises a transparent substrate and a high-refractive-index contrast monocrystalline silicon grating.
Because the HCG grating is monocrystalline silicon with high refractive index, the absorption loss in a visible light wave band is much smaller than that of polycrystalline silicon amorphous silicon and the like, the HCG grating has high transmittance, and the HCG grating cannot be obtained by a processing method of simple deposition. Successful fabrication of single crystal silicon on a transparent substrate is a critical factor in the devices of the present invention.
The preparation process of the HCG grating is as follows:
s1, bonding the SOI wafer to the transparent substrate;
s2, thinning the silicon substrate on the SOI sheet by a physical grinding method, and etching the grating on the silicon substrate of the SOI sheet by an inductively coupled plasma etching (ICP) method;
and S3, etching the insulating layer on the SOI sheet by a chemical method to obtain monocrystalline silicon on the transparent substrate.
As shown in fig. 1 and 2, the width w, the thickness h, and the period a of the basic unit HCG grating are 70nm, 100nm, and 300nm, respectively. When circularly polarized light is incident, the HCG structure resonates in a guided mode with high transmission for s-polarization, and does not resonate for p-polarization, where the phase of incident light, Φ, for s-polarizationiAnd phase of transmitted light phitThe phase difference follows bragg modulation:
Φt-Φim is 0 or a positive integer.
From this, it is understood that the s-polarization and the p-polarization of the transmitted light increase the phase retardation of π, which means that the handedness of circularly polarized light transmitted through HCG changes. Thus, HCG behaves as a half-wave plate, and the incident light from the left hand side through the structure changes chirally, i.e., emerges as a right hand rotation. Rotating the HCG cell at a certain angle θ, the outgoing light will carry a phase of 2 θ. Similarly, when the incident light is the right-handed light, the emergent light is the left-handed light carrying the-2 theta phase. Therefore, when the HCG cell is rotated from 0 to π, phase modulation of 0 to 2 π can be obtained in the outgoing light.
By properly sizing the HCG, the HCG cell is made to have high transmission in the visible and covers a phase change of 0 to 2 pi.
In fig. 3, eight HCGs with different rotation angles are selected, and when the HCGs are incident with the same left-handed circularly polarized light, the emergent light is a right-handed light with corresponding phase retardation.
Two embodiments are listed below, devices implementing different functions, depending on the functional design phase required for the device. The structure for realizing the function of the device is to select eight basic units with phases covering 0 to 2 pi and fill the eight basic units into a corresponding phase diagram. And transferring the structural pattern to monocrystalline silicon by adopting a micro-nano processing method of electron beam exposure to obtain the functional device. The specific operation is that electronic glue is coated on monocrystalline silicon in a spinning mode, then a conducting layer is evaporated for exposure, and after the pattern is developed, the pattern can be transferred to the electronic glue. Then, the electronic glue with the pattern is used as a mask, and the pattern is transferred to the monocrystalline silicon by a top-down etching method.
The present invention has high tolerance and is also applicable to a micro-nano pattern transfer method of 100nm or more, which includes, but is not limited to, electron beam exposure, and can be processed by a method such as photolithography and nanoimprint.
Example 1
The high index contrast grating (HCG) described above for this embodiment designs and processes a normal incidence deflector. As shown in fig. 4 and 5, the vertically incident light is emitted at a certain deflection angle after passing through the structure. The deflection angle is calculated by the generalized Snell's law:
wherein n isiAnd ntAmbient refractive indices, θ, of the incident and transmission ends, respectivelyiAnd thetatIncident and transmission angles, k, respectively0Is a wave vector in the vacuum and,
is the phase gradient. Wherein d phitIs the phase difference between two adjacent elementary units, and d Δ is the lattice period of the elementary unit.
Thus, a deflector with a specific exit angle can be obtained as long as the appropriate phase gradient is designed.
In this embodiment, eight basic units are selected, and the 2 π total phase is divided into 8 parts, i.e., the phase difference between two adjacent basic units is π/4. Each basic unit consists of gratings with 5 periods, namely the period is 1500nm, and therefore the graphic structure of the micro-nano device is obtained.
By transferring the pattern onto the single crystal silicon in the above-described manner, as shown in fig. 3, a device having a light deflecting function can be obtained. When the light is vertically incident at a wavelength of 532nm, the emergent light with a deflection angle of 2.54 degrees can be obtained.
The present invention includes, but is not limited to, 532nm wavelength, and is applicable to the entire visible light band and near infrared, and is also not limited to a normal incident angle and a deflection angle, and an oblique incident deflector may be designed and processed.
Example 2
This embodiment uses the high index contrast grating (HCG) described above to design and process an OAM generator.
The vortex light is a hollow circular beam with a spiral phase distribution, the phase along the propagation direction having
Wherein l is the number of topological charges, which can be any integer,
is the azimuth angle.
The vortex-active wave front is formed by a helical surface, each photon being carried
An Orbital Angular Momentum (OAM),
is Planck constant. Especially when l is 1, the circular polarization mode carries per photon
The sign of the orbital angular momentum of (a) depends on the polarization chirality.
The effect of the vortex light generator can be described as follows:
incident unit left-hand polarized light Ein＝Eo× (1, i) passing through a vortex light generator, the emergent light is right-handed polarized E with 2 α (x, y) geometric phaseout＝Eoexp(i2α(x，y))×(1，-i)。
If phase change obeys
Then the emergent light carries
Wherein α (x, y) is the angle of rotation of each base unit from the optical axis.
In this embodiment, eight basic units are selected, the total phase of 2 pi is divided into 8 parts, and the phase difference between two adjacent basic units is pi/4.
As shown in FIG. 4, the device pattern structure is composed of these eight basic units, bisecting the phase of 2 π exactly with the azimuth angle
The same applies, i.e. l equals 1.
A vortex optical device producing l ═ 1 can be obtained by transferring a pattern onto single crystal silicon in the manner described above. When the incident light is polarized in a levorotatory circle with the wavelength of 532nm, the emergent light passing through the structure is carried
The right-hand polarized light of orbital angular momentum is shown in fig. 6, 7, and 8.
The present invention includes, but is not limited to, 532nm wavelength, and is applicable to the entire visible light band and near infrared, and is not limited to generating 1 ═ 1 vortex light.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (6)
1. A high index contrast grating, comprising: the grating comprises a transparent substrate and a high-refractive-index contrast monocrystalline silicon grating, wherein the high-refractive-index contrast grating has high transmissivity and covers the phase change of 0 to 2 pi in a visible light wave band; the thickness of the high-refractivity contrast grating is 100nm, the width of the high-refractivity contrast grating is 70nm, and the period of the high-refractivity contrast grating is 300 nm.
2. The high index contrast grating of claim 1, wherein the high index contrast grating has a guided mode resonance with high transmission for s-polarization and no resonance for p-polarization, and wherein the phase of incident light, Φ, for s-polarizationiAnd phase of transmitted light phitThe phase difference follows bragg modulation:
Φt-Φi＝mπ，
wherein m is 0 or a positive integer.
3. A method of manufacturing a high index-contrast grating as claimed in claim 1 or 2, comprising the steps of:
s1, bonding the SOI wafer to the transparent substrate;
s2, thinning the silicon substrate on the SOI sheet by a physical grinding method, and etching the grating on the silicon substrate of the SOI sheet by an inductively coupled plasma etching method;
and S3, etching the insulating layer on the SOI sheet by a chemical method to obtain monocrystalline silicon on the transparent substrate.
4. Use of the high refractive index contrast grating of claim 1 or 2 in a multifunctional nanodevice with low loss and high transmittance in the visible light band.
5. The application of claim 4, wherein the multifunctional nano-device with low loss and high transmittance in the visible light band is a deflector, a vortex light generator, a focusing lens.
6. The application of claim 4, wherein the multifunctional nano device with low loss and high transmittance in the visible light waveband is prepared by the following preparation method: designing phase according to the function required by the device, arranging the high-refractive-index contrast grating according to a phase diagram, and finally transferring the pattern to the high-refractive-index contrast monocrystalline silicon of the transparent substrate by a photoetching method.
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| CN110376674B (en) * | 2019-07-30 | 2020-08-04 | 上海交通大学 | Invisible super-surface structure suitable for visible light wave band full-transmission zero-phase delay |
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