CN100459077C - Method for manufacturing substrate - Google Patents

Method for manufacturing substrate Download PDF

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Publication number
CN100459077C
CN100459077C CNB200610057443XA CN200610057443A CN100459077C CN 100459077 C CN100459077 C CN 100459077C CN B200610057443X A CNB200610057443X A CN B200610057443XA CN 200610057443 A CN200610057443 A CN 200610057443A CN 100459077 C CN100459077 C CN 100459077C
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insulating barrier
layer
substrate
central layer
manufacture method
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CNB200610057443XA
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CN101038880A (en
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王永辉
洪清富
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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Abstract

The invention discloses a method for making substrate, which includes providing a core board having inner circuits on both upper and lower sides; forming a storage space on the core board; embedding an element in the storage space and forming an insulation layer to coat the element, core board and the inner circuit of upper and lower sides; forming plural holes on the insulation layer to expose plural electrodes of the elements; forming plural through holes to drill through the insulation layer and the core board; making conductive membrane on the surface of the insulation layer and the side walls of the through holes; forming conductive layer on the conductive membrane; patterning the conductive layer to form outer layer circuit; forming anti-welding layer on the outer layer circuit.

Description

The manufacture method of substrate
Technical field
The present invention relates to a kind of manufacture method of substrate, particularly relate to the manufacture of substrates that is embedded with passive component in a kind of.
Background technology
Along with the communication electronic product is showing improvement or progress day by day, compact and multifunction product has been market mainstream trend, dwindles the volume of parts and uses number to become the emphasis of product design and application gradually.Advantages such as system in package (System in Package) has the package area of dwindling, high speed, the exploitation time-histories is short and production cost is low have become the mainstream technology that replaces traditional individual package system.The whole system encapsulation is divided into integrated substrate and high density interconnect two big main shafts, and wherein integrated substrate is emphasized substrate
High function and integration characteristic will be imbedded substrate in the passive component, to wish and active element and light conduction path also can be imbedded substrate together after all.High-density interconnect technology then emphasizing to see through special material (for example nano material) and manufacturing process, drops to interconnect pitch below 100 microns by existing 160 microns.
In limited substrate space, by dwindling or imbedding passive component and create more spaces to design active element be that present manufacturer is considered as modular important technology.Generally speaking, the encapsulation of embedded element substrate technology is integrated, can be used for replacing conventional discrete formula passive component (for example electric capacity, resistance and inductance etc.), utilize new functional high-polymer composite technology, with passive component by coating, wire mark, pressing, etching ... etc. mode, thereby be imbedded in the internal layer of circuit board.Circuit characteristic and demand in the time of can be according to practical application be selected the material and the laminated construction of internal layer.
Tradition is stacked on the substrate outside (may be the both sides up and down of substrate) with passive component, well imagines, can have the sizable shortcoming of black box thickness like this.And by contrast, then has a lot of advantages with burying substrate in the passive component, except the space that can save substrate surface makes the required surface area of substrate dwindle to reduce at double with black box thickness, also can imbed in the substrate and significantly reduce the scolding tin contact of circuit board because of passive component, reduction is by unnecessary ghost effect that high frequency produced, and then promote the electrical response of radio-frequency module, and increase module making and assembling efficiency and reliability at high frequency; Same owing to above-mentioned advantage, manufacturing cost also reduces significantly.
Increase by 30% in that the quantity of present passive part is annual, substrate area was dwindled 30% development situation with every year under, it is imperative that the renewal of the passive part of conventional discrete formula is replaced simultaneously.Therefore, how element is accurately imbedded a kind of stable board structure of formation in the substrate, become relevant industry and made great efforts one of important goal of research and development.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of substrate, this manufacture of substrates comprises: provide a upper and lower sides to have the central layer of internal layer circuit (Core); Form an accommodation space (Receiving Cavity) at the central layer place; In accommodation space, imbed element, and form insulating barrier with packing element, central layer and inner circuit of upper and lower sides thereof; Form a plurality of holes at the insulating barrier place, to expose the plurality of electrodes of element; Form a plurality of through holes (Through Hole) that run through insulating barrier and central layer; Sidewall at surface of insulating layer and through hole forms conductive film; On conductive film, form conductive layer; Patterned conductive layer is to form outer-layer circuit; And on outer-layer circuit, form welding resisting layer
Manufacture of substrates provided by the present invention can be with element, and particularly passive component is stably imbedded in the substrate.In be embedded with passive component substrate have plurality of advantages, for example: in limited substrate space, imbed passive component, not only can reduce the thickness of whole module, also can increase more spaces active element is set, thereby the multifunctionality of hoisting module.Moreover,, reduces passive component the scolding tin contact of circuit board significantly because imbedding in the substrate, reduce because the unnecessary ghost effect that high frequency produced, and then the lifting radio-frequency module is at the electrical response of high frequency, and increase module making and assembling efficiency and reliability, also because above-mentioned these advantages make manufacturing cost significantly reduce.
Description of drawings
1A to 1K figure expression is according to the manufacture of substrates of the embedded element of one embodiment of the present invention.
Wherein, description of reference numerals is as follows:
10 central layers, 101 first surfaces
Conductive layer on 102 second surfaces, 11 central layers
12 internal layer circuits, 13 accommodation spaces
14 elements, 142 electrodes
15 first insulating barriers, 16 second insulating barriers
17 first strippable papers, 18 second strippable papers
19 holes, 21 through holes
23 conductive films, 24 first conductive layers
25 second conductive layers, 26 outer-layer circuit
27 welding resisting layer 27a, first solder layer
27b second solder layer
Embodiment
Please refer to the 1A~1K figure, it has represented the manufacture of substrates according to the embedded element of one embodiment of the present invention.At first, provide central layer (Core) 10, shown in 1A figure.Then, form an internal layer circuit at the upper and lower sides of central layer 10, shown in 1B figure.In this embodiment, can plate conductive layer 11 respectively at the first surface 101 and the second surface 102 of central layer, the material of conductive layer 11 can be any metal, here then can select for use copper film as conductive layer, and utilize modes such as exposure, development and etching to make conductive layer 11 patternings, thereby form internal layer circuit 12.The material of central layer can be glass fabric or non-glass fiber cloth (as ABF) etc.
Then, form accommodation space (Receiving Cavity) 13 at central layer 10 places, shown in 1C figure.The method of formation accommodation space 13 has a variety of, for example is to utilize the mode of machine drilling (Machine Drilling) to form.The actual size of accommodation space 13 is then looked and is planned to imbed the component size of substrate and to determine.
Then, one element (for example being passive components such as electric capacity, inductance or resistance) 14 is imbedded in the accommodation space 13, and formed insulation division (being first insulating barrier 15 and second insulating barrier 16 that the back is mentioned) with packing element 14, central layer 10 and central layer 10 inner circuit of upper and lower sides 12.But wherein a kind of implementation method is as follows:
At first, element 14 is arranged on the below of central layer 10, makes accommodation space 13 corresponding, and first insulating barrier 15 is provided below element 14, above central layer 10, provide second insulating barrier 16, shown in 1D figure with the position of element 14.Generally can select for use the material (the part flowability is still arranged) that does not also harden fully as first insulating barrier 15 and second insulating barrier 16, so that element 14 can be surrounded by central layer 10, first insulating barrier 15 and second insulating barrier 16 after pressing fully.Also because in the process of piling up, first, second insulating barrier still has the part flowability, therefore can preferably above first insulating barrier 15 and second insulating barrier 16, provide first strippable paper 17 and second strippable paper 18, avoiding in pressing process subsequently, as yet not fully first, second insulating barrier of sclerosis press table is polluted.
Afterwards, above-mentioned stacked body is carried out pressing, element 14 is imbedded in the accommodation space 13, shown in 1E figure by the pressing step.Be under HTHP, to carry out as the pressing step 1, thereby solidify first insulating barrier 15 and second insulating barrier 16.After finishing the pressing step, removable first strippable paper 17 and second strippable paper 18.Wherein, first insulating barrier 15 and second insulating barrier 16 constitute an insulating barrier, insulating barrier packing element 14, central layer 10 and internal layer circuit 12 after the pressing step.
Then, form a plurality of holes 19 at the insulating barrier place, with the plurality of electrodes 142 that exposes element 14, shown in 1F figure.In this embodiment, can use the mode of laser drill (Laser Drilling) on second insulating barrier 16, to form hole 19, thereby expose the electrode 142 of element 14.
Then, form plurality of through holes (Through Hole) 21, to run through second insulating barrier 16, central layer 10 and first insulating barrier 15, shown in 1G figure.Can adopt the mode of machine drilling (MachineDrilling) to form through hole 21 in actual applications.
Then, at the sidewall formation conductive film 23 of surface of insulating layer and through hole 21, shown in 1H figure.Can carry out sputter (Sputter) to the element shown in 1G figure in actual applications,, also can cover layer of conductive film 23 on the sidewall of through hole 21 except on first insulating barrier 15 and second insulating barrier 16, forming the layer of conductive film 23.The material of conductive film can be a metallic copper.
Then, on conductive film 23, form first conductive layer 24 and second conductive layer 25, shown in 1I figure.In this embodiment, can utilize plating mode (Plating) to form first conductive layer 24 and second conductive layer 25, and the conductive film 23 on through hole 21 sidewalls also can thicken simultaneously.The material of first conductive layer 24 and second conductive layer 25 can be a metallic copper.
Then, patterning first conductive layer 24 and second conductive layer 25 are to form outer-layer circuit 26, shown in 1J figure.Wherein, can utilize steps such as exposure, development, etching to form the outer-layer circuit 26 of substrate.
At last, form one deck welding resisting layer (Solder Mask) on outer-layer circuit 26, as shown in 1K figure, the first solder layer 27a and the second solder layer 27b are respectively formed on second conductive layer 25 of first patterning conducting layer 24 and patterning.
According to the described manufacture method of the foregoing description, can be with element, particularly passive component (as electric capacity, inductance or resistance) is stably imbedded in the substrate.In be embedded with passive component substrate have plurality of advantages, for example: in limited substrate space, imbed passive component, not only can reduce the thickness of whole module, also can increase more spaces active element is set, thereby the multifunctionality of hoisting module.In addition, because passive component is embedded in the scolding tin contact that can reduce circuit board in the substrate significantly, reduction is because of the unnecessary ghost effect that high frequency produced, thereby promotes the electrical response of radio-frequency module at high frequency, and increases the yield and the reliability of module making and assembling; Also because above-mentioned these advantages significantly reduce manufacturing cost.
The above only is the present invention's preferred embodiment wherein, is not to be used for limiting practical range of the present invention; Be that all equalizations of doing according to claim of the present invention change and modification, be all claim of the present invention and contain.

Claims (7)

1. the manufacture method of a substrate is characterized in that, this method may further comprise the steps:
One central layer is provided, and the upper and lower sides of this central layer has an internal layer circuit;
Form an accommodation space at this central layer place;
Imbed an element at this accommodation space, and form an insulating barrier to coat the described internal layer circuit of this element, this central layer and upper and lower sides thereof, wherein, comprise in the step that this accommodation space is imbedded this element and this element being arranged on accordingly below this central layer and corresponding with this accommodation space; One first insulating barrier is provided below this element; One second insulating barrier is provided above this central layer; Provide one first strippable paper and one second strippable paper at this first insulating barrier and this second insulating barrier away from a side of this element respectively, to form a stacked body; And this stacked body of pressing, this element is imbedded in this accommodation space; Behind this stacked body of pressing, further comprise the step that removes this first strippable paper and this second strippable paper; And this first insulating barrier and this second insulating barrier constitute this insulating barrier, coat this element, this central layer and described internal layer circuit after the pressing step;
Form a plurality of holes at this insulating barrier place, to expose the plurality of electrodes of this element;
Form plurality of through holes to run through this insulating barrier and this central layer;
Form a conductive film on the surface of this insulating barrier and the sidewall of described through hole;
On this conductive film, form a conductive layer;
This conductive layer of patterning is to form an outer-layer circuit; And
On this outer-layer circuit, form a welding resisting layer.
2. the manufacture method of substrate as claimed in claim 1 is characterized in that, forms a metal level respectively at the upper and lower sides of this central layer, again this metal level is exposed, develops, is etched with to form this internal layer circuit.
3. the manufacture method of substrate as claimed in claim 1 is characterized in that, forms described through hole in the mode of machine drilling, to run through this insulating barrier and this central layer.
4. the manufacture method of substrate as claimed in claim 1 is characterized in that, forms this conductive film in the mode of sputter on the sidewall of described through hole.
5. the manufacture method of substrate as claimed in claim 1 is characterized in that, forms this conductive layer in the mode of electroplating on this conductive film.
6. the manufacture method of substrate as claimed in claim 1 is characterized in that, this element is a passive component.
7. the manufacture method of substrate as claimed in claim 6 is characterized in that, this passive component is an electric capacity, an inductance or a resistance.
CNB200610057443XA 2006-03-15 2006-03-15 Method for manufacturing substrate Active CN100459077C (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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CN101038880A CN101038880A (en) 2007-09-19
CN100459077C true CN100459077C (en) 2009-02-04

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101599438B (en) * 2008-06-05 2012-05-23 欣兴电子股份有限公司 Circuit structure and manufacture method thereof
CN102548229A (en) * 2010-12-29 2012-07-04 陆富强 Embedded type circuit distribution method and structure
KR20130079857A (en) * 2012-01-03 2013-07-11 삼성테크윈 주식회사 Forming method of via hole on circuit board
WO2014188945A1 (en) * 2013-05-22 2014-11-27 三菱製紙株式会社 Manufacturing method for wiring board
US9911715B2 (en) * 2013-12-20 2018-03-06 Cyntec Co., Ltd. Three-dimensional package structure and the method to fabricate thereof
TWI655884B (en) 2017-09-15 2019-04-01 欣興電子股份有限公司 Carrier structure
US11901113B2 (en) 2019-01-07 2024-02-13 Delta Electronics (Shanghai) Co., Ltd. Inversely coupled inductor and power supply module
CN111415925B (en) * 2019-01-07 2023-01-24 台达电子企业管理(上海)有限公司 Power module and preparation method thereof
CN111415908B (en) 2019-01-07 2022-02-22 台达电子企业管理(上海)有限公司 Power module, chip embedded type packaging module and preparation method
US11316438B2 (en) 2019-01-07 2022-04-26 Delta Eletronics (Shanghai) Co., Ltd. Power supply module and manufacture method for same
CN111415909B (en) 2019-01-07 2022-08-05 台达电子企业管理(上海)有限公司 Multi-chip packaged power module

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US6582991B1 (en) * 2000-12-14 2003-06-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2003204154A (en) * 2002-01-08 2003-07-18 Shin Kobe Electric Mach Co Ltd Manufacturing method of multilayer printed-wiring board
CN1537331A (en) * 2002-04-05 2004-10-13 ������������ʽ���� Circuit module and method for mfg. the same
WO2004091266A1 (en) * 2003-04-02 2004-10-21 Matsushita Electric Industrial Co., Ltd. Circuit board and process for producing the same

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US6582991B1 (en) * 2000-12-14 2003-06-24 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2003204154A (en) * 2002-01-08 2003-07-18 Shin Kobe Electric Mach Co Ltd Manufacturing method of multilayer printed-wiring board
CN1537331A (en) * 2002-04-05 2004-10-13 ������������ʽ���� Circuit module and method for mfg. the same
WO2004091266A1 (en) * 2003-04-02 2004-10-21 Matsushita Electric Industrial Co., Ltd. Circuit board and process for producing the same

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