CN100456433C - Focus ring, plasma etching apparatus and plasma etching method - Google Patents
Focus ring, plasma etching apparatus and plasma etching method Download PDFInfo
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- CN100456433C CN100456433C CNB200510123269XA CN200510123269A CN100456433C CN 100456433 C CN100456433 C CN 100456433C CN B200510123269X A CNB200510123269X A CN B200510123269XA CN 200510123269 A CN200510123269 A CN 200510123269A CN 100456433 C CN100456433 C CN 100456433C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The invention provides a focusing ring used in a plasma etching device which utilizes plasma to etch the surface of a baseplate arranged on a carrying table in an airtight processing vessel, and is arranged around the circumference of the baseplate. In the focusing ring, a first area, which performs fine finishing to the area so as to ensure that the average surface roughness Ra is small to the extent that the reaction product is not caught when in processing, is arranged on the inner side close to the surface of the focusing ring; a second area, which performs fine finishing to the area so as to ensure that the even surface roughness R is big enough to capture the reaction product, is arranged outside the first area. The boundary between the first area and the second area is the part where the consumption degree changes greatly relative to the other parts when the focusing ring is assembled in the plasma etching device and the plasma is used for etching the baseplate.
Description
Technical field
The present invention relates to, for example utilize plasma that substrates such as semiconductor wafer are carried out etching, for example on substrate surface, form focusing ring, plasma-etching apparatus and the plasma-etching method that uses in the plasma-etching apparatus of groove.
Background technology
In the logic device of digital household appliances such as digital TV, DVD register, digital camera, mix a year DRAM and begin to have very important significance, form main form on the semiconductor industry at commercial tool.0.18 μ m technology has also appearred utilizing in situation with regard to logic device, and the device of 1,000 ten thousand scales is integrated on 1 LSI, carries Systemonchip (SOC) on 1 silicon wafer with the various LSI headed by the CPU.Be realizing the needed mixed carrier technology of SOC, is to draw each LST performance separately to greatest extent, and the technology that realizes with minimal number of process steps.
The memory cell of DRAM is configured on the crosspoint of cancellate in length and breadth word line and bit line (digital line).This memory cell is selected transistor (nmos pass transistor) by 1 and is formed with its capacitor (volume element) that disposes in upright arrangement.That is, the memory cell of DRAM is the capacitor of stored charge (data) and control data input and output, two elements of 1 transistor of playing on-off action constitute.Volume element with feature of this DRAM unit structure roughly has 2 types.1 kind is that stack is deposited the capacity unit, and cumulative capacity is configured on the transistor, increases electrode area.1 kind is ditch tankage unit in addition, at the inner cumulative capacity that forms of silicon substrate.
Ditch tankage unit, surface is good, because the elevated temperature heat such as oxidation of the capacity of formation film are handled, is to carry out before forming transistor, so very good with the matching of logic device technology.The situation of groove unit is after forming the groove operation and finishing, and just begins to form OSFET technology, so that formation MOSFET technology is formed the influence of ditch tankage cell process is very little.This point is the advantage that DRAM mixes groove unit in the carrier technology.And shortcoming is, because the high dielectric film can not be as the capacity insulating film use, so in order to increase the cumulative capacity value, must form darker groove.In addition, the source electrode of cell transistor, drain electrode are difficult to form trickle the connection with accumulated electrode, become very difficult from 0.18 μ m later processing from generation to generation, so require to excavate darker groove.This technology is called DT (Deep Trench: technology zanjon).
Among the built-in power MOSFET that on the silicon substrate surface, formed in the past, only use the extremely narrow and small zone of substrate surface,, dwindle electrode spacing and be restricted, become the obstacle of low on impedanceization from controlling high-tension necessity.In this DT technology, three-dimensional formation is formed with the MOSFET of groove (ditch) on silicon substrate, at depth direction the necessary electrode spacing of high voltage control, the element reduction means spacing of available withstand voltage number+V is set.
The processing of this DT (ditch or cave), particularly existing problems aspect aspect ratio (aspect ratio in ditch or cave) and section configuration.At this moment, aspect ratio is preferably more than 10, and in addition, desirable section configuration is to have the side wall portion that is formed by smooth surfaces, and the inclination angle of this side wall portion is about 0 degree (vertically), and the shape of subsiding of bottom semicircular in shape (bottom arc).Like this, in DT, can obtain more height, and anisotropy etching accurately.The curved reason in preferred bottom is to become easy for the processing that subsequent insulating film is imbedded in the operation.Imbed in the operation at dielectric film, the area of coverage of accumulating film might damage, so for easy processing, bevel angle is used at the inclination angle of side wall portion sometimes.
For this type of silicon wafer, a kind of groove processing method is to utilize the method for plasma etching, in this technology, for the single crystals silicon layer, for example with silicon nitride film as mask, carry out the anisotropy plasma etching.At this moment, the etching gas chlorine (Cl of halogen can contained
2) and hydrogen bromide (HBr) gas in, add the oxygen (O of trace
2), utilize Cl
2Obtain etching action with HBr, by supplying with O
2Oxide etch reaction product SiCl
x, SiBr
x, form SiO
2, and be deposited on the sidewall at etching position, also can obtain the etched protective effect.
Yet the single crystals silicon layer is not owing to prevent etched bottom, thus different near the center wafer with wafer outer edge etch-rate, the uniformity variation of the degree of depth of groove in wafer face.Especially the wafer outer edge has been piled up a lot of reaction products, and the etch-rate of depth direction is accompanied by the prolongation of etching period, can reduce inevitably.This is because along with groove deepens, and is positioned at the bottom at etched position, the incident angle scope stenosis of free radical, and the density of free radical reduces.
On the other hand, for silicon wafer is carried out plasma etching, as shown in Figure 6, be called the annular element 13 of focusing ring etc. with the mode setting around the silicon wafer 12 of mounting on the mounting table 11.This focusing ring 13 is for example formed by insulating material such as quartz, has the effect of adjusting near the plasma shape of silicon wafer periphery.Same minute surface fine finishining is carried out on focusing ring 13 surfaces.With regard to its reason, be because when focusing ring 13 rough surface, hill reaction product, this deposit upwards dance in the air and attached to the back side and the side of wafer W.Therefore, the inventor thinks after the wafer outer edge part has been piled up too much reaction product, and the reason that the inner evenness of gash depth degenerates is relevant with the mirror finish of focusing ring.
As the technology of using the plasma process groove, known have a patent documentation 1.Put down in writing in this patent documentation 1 HBr (hydrogen bromide) gas as principal component, to wherein adding SF
6(sulphur hexafluoride) gas, SiF
4(silicon tetrafluoride) gas, and then add He (helium) gas, O
2(oxygen) gas forms gaseous mixture, and this gaseous mixture is used as handling gas, silicon oxide layer as mask, is carried out groove processing to silicon, but fail to solve above-mentioned problem.
(list of references 1) Japanese kokai publication hei 11-135489 communique
Summary of the invention
The present invention carries out with regard to being based on above-mentioned situation, its objective is provides a kind of plasma that utilizes that substrate is carried out etching, form recess, for example groove, just adjust the degree of adhesion of reaction product, can carry out good etched focusing ring, use the plasma-etching apparatus and the plasma-etching method of this focusing ring.
The present invention, utilizing plasma etching, when silicon wafer surface is carried out groove processing, the starting point with focusing ring be replaced with new after, length according to service time, there are some differences in the uniformity of etching speed in face, and the etch-rate (etching speed) of the initial stage silicon wafer peripheral portion depth direction of particularly bringing into use is considerably slower than middle body, based on focusing ring Research on surface result is carried out.That is, by using, the place, inboard near this focusing ring surface does not almost consume, and opposite with it, near the outside, the degree of consumption is far longer than the inboard.Though think focusing ring as stating, meeting attachment reaction product when rough surface is because therefore disengaging meeting attaching particles on the silicon wafer side and the back side of this attachment must be conceived to each surperficial position.Promptly, about close focusing ring outside, the consumption degree is very big, under this state, the fact that etching rate difference between silicon wafer middle body and the peripheral portion is very little is: attached to making in silicon wafer side and back side attaching particles near the attachment on the focusing ring inner surface, near in the focusing ring outer surface, form rough surface, method with the catching reaction product, than more being deposited in the peripheral portion of silicon wafer by the inhibitory reaction product, and can suppressing this peripheral portion etch-rate and reduce by this seizure.The present invention carries out with regard to being based on this opinion.
First viewpoint of the present invention provides a kind of focusing ring, specifically, focusing ring of the present invention is to utilize plasma endless member that substrate surface on the mounting table in the bubble-tight container handling carries out using in the etched plasma-etching apparatus to being positioned in, that be provided with in the mode that is centered around around the aforesaid substrate, wherein:
Inboard place near the surface has fine finishining is carried out in this zone, makes the little degree of catching reaction product not during to etch processes of its average surface roughness Ra,
The outside in above-mentioned first area has fine finishining is carried out in this zone, makes its average surface roughness Ra arrive the degree that can catch above-mentioned reaction product greatly.
The focusing ring that second viewpoint of the present invention provides, it is characterized in that: be at the annular element that utilizes plasma to being positioned in that the substrate surface on the mounting table carries out using in the etched plasma-etching apparatus in the airtight container handling, be provided with in the mode that is centered around around the aforesaid substrate, wherein, near its place, surperficial inside, first area with first average surface roughness has the second area of second average surface roughness bigger than above-mentioned first average surface roughness in the outside of this first area.
First area what is called " fine finishining makes the little degree that can not the catching reaction product when the etch processes of its average surface roughness Ra ", the meaning for example is, carries out mirror finish, makes average surface roughness Ra reach the fabulous state of flatness below 0.1.In any case but, even flatness is fine, can not realize absolute planarization, therefore, if can see the particle of reaction product from microcosmic, for example the molecular level degree adheres to, but flatness is good more, and its accumulation degree is more little, even deposit is stripped from, dance in the air on the back side and side of returning and be attached to substrate, also can not cause any problem as particle.The first area must be this state, the inventor reaches a conclusion by test, as long as the average surface roughness Ra of first area below 0.1, uses subsequently, even when being consumed etch processes by plasma, state that can not catching reaction product degree also can be kept considerable time.
Second area; so-called " fine finishining; make its average surface roughness Ra arrive the degree of energy catching reaction product greatly "; be meant following state: when the whole zone with the outside, first area forms the smoothness identical with the first area; can the catching reaction product; therefore; peripheral portion at substrate is piled up a large amount of reaction products; the result who obtains is an etching protective effect surplus; recess; for example the etch-rate of groove slows down, and between substrate center portion and peripheral portion, it is inhomogeneous that concave depth becomes.Yet, form second area, during the smoothness variation at this position, in the result of this place's catching reaction product, the speed that the etching of recess slows down reduces, and between substrate center portion and peripheral portion, has improved the uniformity of recess depths.Therefore, second area is worked into surperficial rough-shape attitude, reaches the degree that obtains this effect, for example, by sand milling processing etc., is worked into average surface roughness Ra at the state below 3.2.That is, near the inboard of focusing ring, for example grinding, carry out mirror finish, make average surface roughness Ra very little, is that average surface roughness Ra is worked into state greater than this average surface roughness Ra in the outside, we can say to be equivalent to focusing ring of the present invention.
Like this, when using focusing ring, by being exposed in the plasma, though consume, the consumption degree in the surface, exterior lateral area is greater than medial region., focusing ring is assembled in the device, when being exposed in the plasma, preferably the position that the consumption degree is changed is set at the boundary of first area and second area for this reason.
The focusing ring of another side of the present invention is characterized in that: utilize plasma that the substrate surface that is positioned on the mounting table in the bubble-tight container handling is carried out in the etched plasma-etching apparatus, be provided with in the mode on every side that is centered around aforesaid substrate.Utilize the mist of halogen-containing etching gas and oxygen, when silicon layer was carried out etching, the silicon halide and the oxygen that are generated by etching reacted; generate silicon dioxide; this reaction product is deposited in and has played the etched protective effect in the recess, and therefore, the present invention is suitable in the operation of this class.
According to the present invention, not that whole focusing ring surface is formed very high flatness, but in inboard near the surface, form the very little zone of average surface roughness Ra, suppress the hill reaction product, reduce the back side and the side attachment of particle thus to substrate, on the other hand, forming the very big zone of average surface roughness Ra near the outside, catch the reaction product of accumulation, the inhibitory reaction product is deposited in the substrate peripheral portion thus, and can suppress the reduction of this peripheral portion etch-rate.Therefore, can suppress the pollution of particle, improve the uniformity of etch-rate between the middle body of substrate and peripheral portion, for example,, can carry out the high processing of inner evenness for the recess depths that forms by etching to substrate.
Description of drawings
With reference to accompanying drawing and the following detailed explanation of utilization, further specify purpose of the present invention, feature and advantage.
Fig. 1 is the plasma-etching apparatus vertical profile side view of embodiment of the present invention.
Fig. 2 is the mounting table periphery and the focusing ring vertical profile side view of above-mentioned plasma-etching apparatus.
Fig. 3 utilizes above-mentioned plasma-etching apparatus, the key diagram of the substrate surface of substrate surface before the etching and formation groove.
Fig. 4 be in focusing ring of the present invention and the existing focusing ring deposit adhere to and break away from key diagram as image.
Fig. 5 be to confirm effect of the present invention, and carries out the key diagram of measurement result of the focusing ring concave-convex surface state of embodiment.
Fig. 6 is the sectional arrangement drawing of mounting table and focusing ring in the existing plasma-etching apparatus.
Embodiment
The execution mode of the plasma-etching apparatus of focusing ring of the present invention has been used in following conduct, is that example describes with the reactive ion etching device of Magnetron Mode.2 is by the air-tightness container handling that constitutes as electroconductive components such as aluminium among the figure, these container handling 2 ground connection.Subtend is provided with upper electrode 3 and mounting table 4 in this container handling 2, wherein, upper electrode 3 is to import the gas supply part that carries out etched processing gas to divide and double as gas spray head mounting table 4 mounting substrates, as silicon wafer (hereinafter referred to as wafer) W, double as lower electrode.
The bottom of container handling 2 is connected with blast pipe 21, this blast pipe 21 and vacuum pumping hardware, and for example turbomolecular pump is connected with dry pump equal vacuum pump 22.On the sidewall of container handling 2, have the switch family of power and influence 23 freely, and be provided with and move into the peristome 23a that takes out of wafer W.
Below above-mentioned upper electrode 3, perforation is provided with by gas supply pipe road 31, and for example a plurality of gas diffusion holes 32 of pipe arrangement and surge chamber 31a connection constitute and can spray predetermined process gas to the wafer W that is positioned on the above-mentioned mounting table 4.Above-mentioned gas feeding pipe 31, its cardinal extremity is connected with gas supply system 33, and this gas supply system 33 has processing gas, for example HBr gas, NF
3Supply source, valve and the flow control divisions of (Nitrogen trifluoride) G﹠O body etc. are supplied with control appliance etc.Upper electrode 3 is connected with the high frequency electric source portion 35 of supply high frequency electricity by adaptation 34.Upper electrode 3 is by the side wall portion insulation of insulating element 36 with container handling 2.
Above-mentioned mounting table 4 has by electroconductive component, for example the body part 40 of formation such as aluminium and be located at electrostatic chuck 41 on the body part.In the inside of this electrostatic chuck 41, be provided with for example paper tinsel shape electrode 41a, this electrode 41a connects DC power supply 43 by switch 42, by applying direct voltage (sucker voltage), by electrostatic force with the wafer W Electrostatic Absorption on electrostatic chuck 41 surfaces.Be provided with not shown temperature adjustment register in body part 40, the thermoregulatory effect by this register and from the heat of plasma remains on predefined temperature with wafer W.
On the surface of electrostatic chuck 41, perforation is provided with a plurality of jets 44, spray to the back side of wafer W and to improve the heat transfer gas that forms the heat transfer efficiency of fine clearance between mounting table 4 and the wafer W, helium (He) for example, and from middle body to outdiffusion heat transfer gas.These jets 44 are communicated with gas supply part 46 with heat transfer with gas supply pipe road 45 by the heat transfer that connects in the mounting table 4.Above-mentioned mounting table 4 connects the high frequency electric source portion 48 that applies the biasing electricity consumption by adaptation 47.In the inside of mounting table 4, be provided with and carry out the not shown lifter pin that wafer W is transmitted to not shown transferring arm.
Around electrostatic chuck 41, to remain on the mode of this electrostatic chuck 41 wafer W on every side around absorption, be provided with by insulating material, form as quartz, for example ring width L is about the focusing ring 5 of 64mm.The top of the body part 40 of mounting table 4; be provided with guard ring 49 for the insulating properties of the screw etc. of protection assembly; focusing ring 5 is crossed over this guard ring 49 and body part 40; be located on them; simultaneously; form section portion at inward flange, extend into downside to outstanding wafer perimeter position, electrostatic chuck 41 outsides.
Thus, this focusing ring 5 from inner circumference, on radial outside, for example with 32mm point P at a distance, as the border, is taken as first area f1 and second area f2 respectively with medial region and exterior lateral area, by following polished surface thus.First area f1, to its Surface Finishing, make the little reaction product to etch processes can not be caught the time of its average surface roughness Ra, the degree of the compound of silicon and oxygen for example, and second area f2, to its Surface Finishing, make average surface roughness Ra greatly to the degree that can catch the dry reaction product.That tells about in detail in the project of their meaning and " summary of the invention " is the same, specifically is first area f1, for example, utilizing polishing technology to be worked into average surface roughness Ra is 0.1, and second area f2 for example processes with sand milling, be worked into average surface roughness Ra below 3.2, as 1.6.As above-mentioned, as long as the average surface roughness Ra of first area f1 below 0.1, even use by plasma consumption later on, when etch processes, also can keep the not state of catching reaction product in considerable time.For second area f2, when average surface roughness Ra is excessive, can adhere to sizable particle, it is too much that (adhering to of reaction product) adhered in storage, causes the uniformity variation, so preferably be no more than 3.2.
As stating, the present invention, use becomes whole Surface Machining the focusing ring 5 of minute surface, carry out long-time plasma etching, when studying the surface, from the inboard, begin by distance a part, average surface roughness Ra increases suddenly, under this state, because be conceived to fall into the very little fact of etch-rate fall of wafer W peripheral portion, so, with the border of the rapid point that increases of average surface roughness Ra, so preferably produce such surface state at the very start as first area f1 and second area f2.
Get back to Fig. 1; relevant other the position of record; on the inwall of container handling 2; for preventing that reaction product is attached on this internal face; be provided with the protection tube 61 that for example forms that is called as sealing warehouse (depotsealed) etc., be provided with the spacer ring body 62 that prevents that reaction product from adhering in the side of mounting table 4 by quartz.The 63rd, regulate baffle-wall (baffle), be the device that makes the vacuum exhaust homogenizing.And then, at the outer circumferential side of container handling 2, in order in handling gaseous environment, to form the magnetic field of regulation, for example in magnet portion 64,65 that upper and lower settings is formed by a plurality of annular permanent magnnet assortments.
Then, illustrate and use above-mentioned plasma processing apparatus that to substrate, for example the order of plasma treatment is carried out on the wafer W surface.At first, open the family of power and influence 23, utilize not shown transferring arm, to send in the container handling 2 as the wafer W of substrate, utilize not shown lifter pin that wafer W is positioned on mounting table 4 surfaces, close the family of power and influence 23 simultaneously, the pressure of maintenance regulation on one side, in container handling 2, supply with etching gas, for example HBr gas and NF from gas spray head on one side as upper electrode 3
3The O of gas and trace
2Gas.At this moment, be fed to the etching gas in the container handling 2, along the surface of wafer W, flow, and around mounting table 4, discharge to foreign side radially.
Then, apply sucker voltage, the wafer W Electrostatic Absorption after on the electrostatic chuck 41, is supplied with the He gas of heat transfer usefulness to the rear side of wafer W.Then, open high frequency electric source part 35, between upper electrode 3 and lower electrode 4, apply high frequency voltage as mounting table, make the etching gas plasmaization, open high frequency electric source part 48 simultaneously, apply biasing to wafer W and use electric power, make the active seed in the plasma clash into wafer W with very high up rightness.Utilize the effect of focusing ring 5 to suppress the plasma expansion like this, and can not reduce the active seed concentration of wafer W peripheral portion.
Fig. 3 A is the surface portion that becomes the substrate wafer W of process object, on mcl silicon layer 71, stacks gradually the silicon nitride film (Si for CMP (cmp) operation that stops the back operation
3N
4Film) 72 and during etching as the bsg film (the noncrystalline silicon oxide film of boron-doping) 73 of mask (hard mask).This surface portion is exposed in the plasma, and silicon layer 71 is etched.Wafer W absorbs heat from plasma, utilizes not shown cooling device cooling mounting table 4, utilizes this balance, can keep design temperature, and like this, the etching of silicon layer 71 is to utilize HBr gas and NF
3Gas cuts, simultaneously, and its reaction product SiCl
x, SiBr
xBy O
2Oxidation forms SiO
2Deng oxide, and in the recess attached to etched position, thus, protect side wall surface, both suppressed horizontal etching, can carry out etching to depth direction again.Fig. 3 B represents the state of silicon layer 71 etched formation grooves 74, groove 74, and for example the degree of depth is 7.5 μ m, aspect ratio is 4.0.
Enumerate routine treatment conditions, the power setting that the pressure in the container handling 2 are set at 2.66Pa (200mTorr), high frequency electric source portion 35 is that the power setting of 2100W, high frequency electric source portion 48 is that the temperature of 900W, wafer W is set at 80 ℃, HBr gas, NF
3Gas and O
2The flow set of gas is 300/32/18sccm.
Therefore, by the reaction product of etching product, upwards dance in the air from the surface of wafer W, and flow to the outside, the second area f2 of focusing ring 5 is because rough surface so the part of reaction product is captured, is deposited on the f2 of this zone.Fig. 4 A shows the image of this state, the particle 100 of reaction product has been done exaggeration described.And think the peripheral portion of wafer W and the near surface of focusing ring 5, and reaction product dances in the air, and the part of reaction product is come and gone between the two and is danced in the air.Thus, by utilizing focusing ring 5 catching reaction products, in simple terms, have only this part seldom attached to the reaction product at the etched position of wafer W peripheral portion.
Opposite with it, Fig. 4 B shows whole focusing ring 5 Surface Machining is become minute surface, forms the situation of very high flatness, and sudden reaction product is not caught on the surface, and it upwards dances in the air, and wherein a part is danced in the air on the peripheral portion that turns back to wafer W.In the peripheral portion of wafer W; originally just adhere to a large amount of reaction products; the etched protective effect is strong excessively; so in this embodiment; utilize the seizure effect of focusing ring 5 to relax this protective effect, its result has suppressed the reduction of etch-rate; and relaxed gash depth inhomogeneities between wafer W middle body and the peripheral portion, improved inner evenness thus.The inside of container handling 2 is regularly cleaned, is removed the reaction product that is deposited on the focusing ring 5, utilizes peeling off of deposit to prevent to produce particle.
And then the first area f1 of the inboard of focusing ring 5 is because the smoothness height, so in fact non-cohesive reaction product, thus, reaction product is deposited near the outer rim of wafer W, dance in the air return thereby restrain it, attached to the phenomenon of the wafer W back side and side formation particle contamination.
According to above-mentioned execution mode, in the surface of focusing ring 5, first area f1 near inboard has very high flatness, so can the hill reaction product, the second area f2 in its outside is very coarse, so can catch the hill reaction product,, can suppress the particle contamination of particle to wafer W as above-mentioned, and can suppress the reduction of wafer W peripheral portion etch-rate, etch processes can obtain very high inner evenness.
Among the present invention,, be not limited on silicon layer, form the processing of groove, also be applicable to in dielectric film, forming the situation that wiring layer forms recess as etch target.At this moment, the peripheral portion of wafer W, because the accumulation of reaction product minimizing, so restrain the superfluous protective effect that reaction product forms, and can suppress the deterioration of etching shape.Material as focusing ring is not limited to insulating material, in order to expand plasma, also can use electric conductor or semiconductor.As etching gas, be not limited to above-mentioned gas, even do not add oxygen, also can be applicable to the etching that produces reaction product.
Embodiment
Then, for confirming effect of the present invention, the embodiment that carries out is described.For the focusing ring of narrating in the above-mentioned execution mode 5, whole Surface Machining is become minute surface, average surface roughness Ra is taken as 0.05, and it is installed in the plasma-etching apparatus of Fig. 1, handles 1800 pieces of wafer W with surface portion shown in Fig. 3 A under the treatment conditions of above-mentioned execution mode, each self-forming groove, amount to disposing time and reach 30 hours, take out focusing ring 5, study its surface, its result
From the inner edge of focusing ring 5, in the region S 0 of radial outside 5mm, average surface roughness Ra is 0.8,
Region S 1 from the above-mentioned zone S0 of focusing ring 5 to outside 32mm, average surface roughness Ra is 0.15,
Fig. 5 A～C is data of measuring each region S 0, S1, S2 apparent height.Near the inner edge of focusing ring 5, because plasma density (density of active seed) is very high, inevitable fierce consumption, but in the near slightly region S 1 of inner edge, average surface roughness Ra is 0.15, does not almost consume as can be known.Near the region S 2 in focusing ring 5 outsides, the consumption degree increases once more.With compare near area inside S1, think the big reason of region S 2 consumption degree near the outside, be that the plasma flow velocity is very fast, the fresh a lot of cause of active seed.
On the other hand, when checking etching state, about initial stage wafer W constantly, compare with middle body, the etch-rate of peripheral portion is very little, has only 39.5nm/ minute, but through the wafer W after 30 hours, become littler with the etch-rate of middle body comparison peripheral portion, have only 35.6nm/ minute, thereby improved the uniformity of etching speed.The average surface roughness Ra of above-mentioned zone S1 is 0.15, and the flatness of this state is quite high, can not catch the hill reaction product, and the average surface roughness Ra of close its exterior lateral area S2 is 0.36, under this state, can catch the hill reaction product.
Therefore, in the surface of focusing ring 5,, form the very little zone of average surface roughness Ra,, form the very big zone of average surface roughness Ra, be appreciated that this situation is very effective near the outside near inboard place.For example, when making focusing ring 5, as long as will for example be taken as below 0.1 near the average surface roughness Ra of medial region S0 and S1, for example, even device was used 400 hours, the hill reaction product also can keep suppressing to dance in the air the state that returns the wafer W side.Near the average surface roughness Ra of exterior lateral area S2, for example,, when beginning, just can obtain to catch the effect of hill reaction product from using as long as be worked into 0.36, its result can carry out the good processing of inner evenness.
The present invention is not limited in the foregoing description, and in disclosed the technology of the present invention thought and the category, this technical field personnel can make numerous variations in the claim scope.
Claims (8)
1. focusing ring is at the endless member that utilizes plasma to carry out using in the etched plasma-etching apparatus to being positioned in substrate surface on the mounting table in the bubble-tight container handling, be provided with in the mode around described substrate, wherein:
Near its surperficial inside, have the first area of first average surface roughness,
The outside in described first area has the second area greater than second average surface roughness of described first average surface roughness,
The average surface roughness of described first area is below 0.1,
The average surface roughness of described second area is more than 0.15, below 0.36.
2. focusing ring as claimed in claim 1, it is characterized in that: the boundary of described first area and second area, be that focusing ring is assembled in the plasma-etching apparatus, when utilizing plasma that substrate is carried out etching, the position that relative other positions of consumption degree change significantly.
3. focusing ring as claimed in claim 1 is characterized in that: the boundary of described first area and second area is located 1/2 of described focusing ring width.
4. plasma-etching apparatus, it is characterized in that: utilizing plasma that the substrate surface that is positioned on the mounting table in the bubble-tight container handling is carried out in the etched plasma-etching apparatus, be provided with the described focusing ring of claim 1 to be centered around described substrate mode on every side.
5. one kind is used the described plasma-etching apparatus of claim 4 that substrate is carried out etched plasma-etching method.
6. plasma-etching method as claimed in claim 5 is characterized in that: described etching is the mist that utilizes halogen-containing etching gas and oxygen, and silicon layer is carried out.
7. a plasma-etching method is characterized in that, comprising:
The focusing ring of claim 1 is arranged on operation on the mounting table in the described bubble-tight container handling;
With the operation of described substrate-placing on described mounting table; With
Described substrate is carried out etched operation.
8. plasma-etching method as claimed in claim 7 is characterized in that: described etching is to utilize the gaseous mixture of halogen-containing etching gas and oxygen that silicon layer is carried out.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004331071 | 2004-11-15 | ||
| JP2004331071A JP4645167B2 (en) | 2004-11-15 | 2004-11-15 | Focus ring, plasma etching apparatus and plasma etching method. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1776889A CN1776889A (en) | 2006-05-24 |
| CN100456433C true CN100456433C (en) | 2009-01-28 |
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| KR (1) | KR100686763B1 (en) |
| CN (1) | CN100456433C (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4849236B2 (en) * | 2006-09-27 | 2012-01-11 | 三菱マテリアル株式会社 | Silicon electrode plate for plasma etching equipment with less particle generation |
| JP2009010017A (en) * | 2007-06-26 | 2009-01-15 | Mitsubishi Materials Corp | Focus ring for plasma etching apparatus generating fewer particles |
| JP2011151263A (en) | 2010-01-22 | 2011-08-04 | Tokyo Electron Ltd | Etching method, etching device, and ring member |
| CN102214567B (en) * | 2010-04-02 | 2013-05-29 | 中芯国际集成电路制造(上海)有限公司 | Method for forming grooves |
| WO2011155479A1 (en) * | 2010-06-11 | 2011-12-15 | 株式会社 アルバック | Etching apparatus |
| JP5642531B2 (en) * | 2010-12-22 | 2014-12-17 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
| JP2013033940A (en) * | 2011-07-07 | 2013-02-14 | Tokyo Electron Ltd | Plasma processing apparatus |
| JP6071514B2 (en) * | 2012-12-12 | 2017-02-01 | 東京エレクトロン株式会社 | Electrostatic chuck reforming method and plasma processing apparatus |
| JP6552346B2 (en) * | 2015-09-04 | 2019-07-31 | 東京エレクトロン株式会社 | Substrate processing equipment |
| CN108074788B (en) * | 2016-11-14 | 2021-07-23 | 台湾积体电路制造股份有限公司 | Semiconductor processing equipment and manufacturing method of semiconductor device |
| CN106736881A (en) * | 2016-12-28 | 2017-05-31 | 苏州爱彼光电材料有限公司 | Wafer surface processing and treating method |
| JP6991043B2 (en) * | 2017-11-22 | 2022-02-03 | 東京エレクトロン株式会社 | Board mount |
| JP7431260B2 (en) | 2022-01-13 | 2024-02-14 | Ｓｐｐテクノロジーズ株式会社 | Substrate processing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1209908A (en) * | 1996-01-26 | 1999-03-03 | 松下电子工业株式会社 | Semiconductor manufacturing apparatus |
| JPH1161451A (en) * | 1997-08-25 | 1999-03-05 | Hitachi Chem Co Ltd | Focus ring of plasma etching equipment and plasma etching equipment |
| JP2000072529A (en) * | 1998-08-26 | 2000-03-07 | Toshiba Ceramics Co Ltd | Plasma-resistant member and plasma-treatment apparatus using the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5560804A (en) * | 1991-03-19 | 1996-10-01 | Tokyo Electron Limited | Etching method for silicon containing layer |
| JP3257741B2 (en) * | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | Plasma etching apparatus and method |
| US6447937B1 (en) * | 1997-02-26 | 2002-09-10 | Kyocera Corporation | Ceramic materials resistant to halogen plasma and components using the same |
| US6447853B1 (en) * | 1998-11-30 | 2002-09-10 | Kawasaki Microelectronics, Inc. | Method and apparatus for processing semiconductor substrates |
| JP2004289003A (en) * | 2003-03-24 | 2004-10-14 | Seiko Epson Corp | Quartz ring, plasma processor and method for manufacturing semiconductor device |
| KR100610010B1 (en) * | 2004-07-20 | 2006-08-08 | 삼성전자주식회사 | Apparatus for |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1209908A (en) * | 1996-01-26 | 1999-03-03 | 松下电子工业株式会社 | Semiconductor manufacturing apparatus |
| JPH1161451A (en) * | 1997-08-25 | 1999-03-05 | Hitachi Chem Co Ltd | Focus ring of plasma etching equipment and plasma etching equipment |
| JP2000072529A (en) * | 1998-08-26 | 2000-03-07 | Toshiba Ceramics Co Ltd | Plasma-resistant member and plasma-treatment apparatus using the same |
Also Published As
| Publication number | Publication date |
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| JP2006140423A (en) | 2006-06-01 |
| KR100686763B1 (en) | 2007-02-26 |
| TWI384545B (en) | 2013-02-01 |
| TW200627541A (en) | 2006-08-01 |
| KR20060054137A (en) | 2006-05-22 |
| CN1776889A (en) | 2006-05-24 |
| JP4645167B2 (en) | 2011-03-09 |
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