JP4849236B2 - Silicon electrode plate for plasma etching equipment with less particle generation - Google Patents

Silicon electrode plate for plasma etching equipment with less particle generation Download PDF

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JP4849236B2
JP4849236B2 JP2006262275A JP2006262275A JP4849236B2 JP 4849236 B2 JP4849236 B2 JP 4849236B2 JP 2006262275 A JP2006262275 A JP 2006262275A JP 2006262275 A JP2006262275 A JP 2006262275A JP 4849236 B2 JP4849236 B2 JP 4849236B2
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周司 藤森
孝志 米久
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Mitsubishi Materials Corp
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この発明は、パーティクル発生の少ないプラズマエッチング装置用シリコン電極板に関するものであり、このプラズマエッチング装置用シリコン電極板は、プラズマエッチング装置内のシールド支持電極により支持した状態で使用されるプラズマエッチング装置用シリコン電極板に関するものである。   The present invention relates to a silicon electrode plate for a plasma etching apparatus that generates less particles, and the silicon electrode plate for a plasma etching apparatus is used for a plasma etching apparatus that is used while being supported by a shield support electrode in the plasma etching apparatus. The present invention relates to a silicon electrode plate.

一般に、半導体集積回路を製造する工程でウエハをエッチングするためのプラズマエッチング装置が用いられている。このプラズマエッチング装置は、図５の断面概略説明図に示されるように、真空チャンバー８内にシリコン電極板２および上下動可能な架台３が間隔をおいて設けられており、シリコン電極板２は絶縁体１３により真空チャンバー８と絶縁されている。架台３の上には静電チャック９が設けられており、静電チャック９の上に支持電極板１と共にウエハ４を載置し、エッチングガス７を拡散部材１１を通したのちシリコン電極板２に設けられた貫通細孔５を通してウエハ４に向って流しながら高周波電源６によりシリコン電極板２と架台３の間に高周波電圧を印加することができるようになっている。   In general, a plasma etching apparatus for etching a wafer in a process of manufacturing a semiconductor integrated circuit is used. In this plasma etching apparatus, as shown in the schematic sectional view of FIG. 5, a silicon electrode plate 2 and a vertically movable base 3 are provided in a vacuum chamber 8 with an interval therebetween. The insulator 13 is insulated from the vacuum chamber 8. An electrostatic chuck 9 is provided on the gantry 3. The wafer 4 is placed on the electrostatic chuck 9 together with the support electrode plate 1, and after passing the etching gas 7 through the diffusion member 11, the silicon electrode plate 2. A high-frequency voltage can be applied between the silicon electrode plate 2 and the gantry 3 by a high-frequency power source 6 while flowing toward the wafer 4 through the through-holes 5 provided in FIG.

この高周波電圧が印加された状態で供給されたエッチングガス７は拡散部材１１を通り、シリコン電極板２に設けられた貫通細孔５を通ってシリコン電極板２と架台３の間の空間でプラズマ１０となり、このプラズマ１０がウエハ４に当ってウエハ４の表面がエッチングされる。
前記発生したプラズマ１０がウエハ４の中心部に集中したり、外周部への拡散するのを阻止して、シリコン電極板２とウエハ４との間に均一なプラズマを発生させ、ウエハの均一なエッチングを行うために、通常、プラズマ発生領域をシールド支持電極１２で囲っている。支持電極板１は下部にウエハ４を支持するためのものであり、この支持電極板１はウエハ４を支持固定しやすくするために内段を有している（特許文献１参照）。 The etching gas 7 supplied in a state where the high-frequency voltage is applied passes through the diffusion member 11, passes through the through-hole 5 provided in the silicon electrode plate 2, and is plasma in the space between the silicon electrode plate 2 and the gantry 3. The plasma 10 hits the wafer 4 and the surface of the wafer 4 is etched.
The generated plasma 10 is prevented from concentrating on the center portion of the wafer 4 or diffusing to the outer peripheral portion, and a uniform plasma is generated between the silicon electrode plate 2 and the wafer 4 so that the wafer is uniform. In order to perform etching, the plasma generation region is usually surrounded by the shield support electrode 12. The support electrode plate 1 is for supporting the wafer 4 in the lower portion, and the support electrode plate 1 has an inner stage for facilitating support and fixing of the wafer 4 (see Patent Document 1).

前記シリコン電極板２は、単結晶シリコン、多結晶シリコン、柱状晶シリコンなどからなるシリコン板の厚さ方向に平行に貫通細孔５が設けられた構成を有している。その他に図５には図示されてはいないが大径部および小径部を有する鍔付きシリコン電極板があることも知られており、この鍔付き円板状シリコン電極板は鍔部にシールド支持電極１２の支持突起部が接触するように嵌め込まれた状態で使用されている。 The silicon electrode plate 2 has a configuration in which through-holes 5 are provided in parallel to the thickness direction of a silicon plate made of single crystal silicon, polycrystalline silicon, columnar crystal silicon, or the like. In addition, although not shown in FIG. 5, it is also known that there is a silicon electrode plate with a hook having a large diameter portion and a small diameter portion. The twelve support protrusions are used in a state of being fitted so as to come into contact with each other.

前記シリコン電極板２は、ＪＩＳＢ０６０１に規定されている測定方法により測定した中心線表面粗さＲａを１μｍ以下の鏡面とすることにより、ウエハに付着するパーティクルの数を極力少なくしている（特許文献２参照）。
特開２００１−７０９０号公報 特開平７−２７３０９４号公報 The silicon electrode plate 2 has a mirror surface with a center line surface roughness Ra measured by a measuring method defined in JISB0601 of 1 μm or less, thereby minimizing the number of particles adhering to the wafer (Patent Document). 2).
Japanese Patent Application Laid-Open No. 2001-7090 Japanese Patent Laid-Open No. 7-273094

プラズマエッチング装置用シリコン電極板の表面粗さを可及的に小さくして鏡面度を上げ、それによってパーティクルの発生を極力抑制しようとしているが、パーティクルの発生は依然として避けられず、特に長時間プラズマエッチングを行なうと、大量のパーティクルが発生するようになって不良品発生の確率を増加させるのでの好ましくない。   The surface roughness of the silicon electrode plate for plasma etching equipment is made as small as possible to increase the specularity, thereby trying to suppress the generation of particles as much as possible. Etching is not preferable because a large amount of particles are generated and the probability of occurrence of defective products is increased.

そこで、本発明者等は、長時間プラズマエッチングを行なってもパーティクルの発生の少ないプラズマエッチング装置用シリコン電極板を得るべく研究を行った。その結果、
（イ）プラズマエッチング処理において、パーティクルはシリコン電極板を支持するシールド支持電極の支持突起部とシリコン電極板の接触部から発生すること、
（ロ）このシールド支持電極の支持突起部とシリコン電極板の接触部から発生するパーティクルの数を減らすには、シールド支持電極の支持突起部により覆われるシリコン電極板の接触面を、通常のシリコン電極板の表面粗さよりも粗くすると、前記接触面から発生するパーティクルの発生数が少なくなって、全体としてウエハに付着するパーティクルの数が少なくなること、
（ハ）大径部および小径部を有する鍔付きシリコン電極板の場合は、鍔部下面およびシリコン電極板の小径部外周側面の表面を通常のシリコン電極板の表面粗さよりも粗くすると、前記接触面から発生するパーティクルの発生数が少なくなって、全体としてウエハに付着するパーティクルの数が少なくなること、
（ニ）前記通常のシリコン電極板の表面粗さよりも粗くする範囲は、Ｒａ：１μｍを越え１．６μｍの範囲内にあることが好ましいこと、
などの知見を得たのである。 Therefore, the present inventors have conducted research to obtain a silicon electrode plate for a plasma etching apparatus that generates less particles even after long-time plasma etching. as a result,
(A) In the plasma etching process, particles are generated from the contact portion between the support projection of the shield support electrode that supports the silicon electrode plate and the silicon electrode plate,
(B) In order to reduce the number of particles generated from the contact portion of the shield support electrode and the silicon electrode plate, the contact surface of the silicon electrode plate covered by the support protrusion portion of the shield support electrode is changed to normal silicon. When rougher than the surface roughness of the electrode plate, the number of particles generated from the contact surface is reduced, and the number of particles adhering to the wafer as a whole is reduced.
(C) In the case of a silicon electrode plate with a flange having a large-diameter portion and a small-diameter portion, if the surface of the bottom surface of the flange portion and the outer peripheral side surface of the small-diameter portion of the silicon electrode plate is made rougher than the surface roughness of a normal silicon electrode plate, the contact The number of particles generated from the surface is reduced, and the number of particles adhering to the wafer as a whole is reduced.
(D) It is preferable that the range to be rougher than the surface roughness of the normal silicon electrode plate is within a range of Ra: 1 μm and 1.6 μm.
I got the knowledge such as.

この発明は、かかる知見に基づいてなされたものであって、
（１）表面の中心線表面粗さＲａが１μｍ以下の鏡面を有する円板状のシリコン電極板において、前記シリコン電極板の少なくともシールド支持電極の支持部上面により覆われる部分のシリコン電極板の中心線表面粗さＲａを１μｍ越え〜１．６μｍの粗面にしたパーティクル発生の少ないプラズマエッチング装置用シリコン電極板、
（２）表面の中心線面粗さＲａが１μｍ以下の鏡面を有する大径部および小径部を有する鍔付き円板状のシリコン電極板において、前記シリコン電極板の鍔部下面および小径部外周側面の中心線表面粗さＲａを１μｍ越え〜１．６μｍにしたパーティクル発生の少ないプラズマエッチング装置用シリコン電極板、
（３）前記プラズマエッチング装置用シリコン電極板は、単結晶シリコン、多結晶シリコンおよび柱状晶シリコンの内のいずれかからなる前記（１）または（２）記載のパーティクル発生の少ないプラズマエッチング装置用シリコン電極板、に特徴を有するものである。 This invention has been made based on such knowledge,
(1) In the disk-shaped silicon electrode plate having a mirror surface with a surface center surface roughness Ra of 1 μm or less, the center of the silicon electrode plate that is covered by at least the upper surface of the support portion of the shield support electrode of the silicon electrode plate A silicon electrode plate for a plasma etching apparatus with less particle generation, having a surface roughness Ra exceeding 1 μm to a rough surface of 1.6 μm,
(2) A flanged disk-shaped silicon electrode plate having a large-diameter portion and a small-diameter portion having a mirror surface with a surface center line roughness Ra of 1 μm or less, and a bottom surface of the flange portion and a small-diameter outer peripheral surface of the silicon electrode plate A silicon electrode plate for plasma etching apparatus with less particle generation, having a center line surface roughness Ra of 1 μm to 1.6 μm,
(3) The silicon electrode plate for plasma etching apparatus according to (1) or (2), wherein the silicon electrode plate for plasma etching apparatus is made of any one of single crystal silicon, polycrystalline silicon, and columnar crystal silicon. The electrode plate has a feature.

この発明のプラズマエッチング装置用シリコン電極板を使用すると、パーティクル発生が少なく、コスト削減することができると共にプラズマエッチングによる半導体集積回路の不良品発生を大幅に減らすことができ、半導体装置産業の発展に大いに貢献しうるものである。   When the silicon electrode plate for plasma etching apparatus of the present invention is used, the generation of particles can be reduced, the cost can be reduced, and the generation of defective products of the semiconductor integrated circuit due to plasma etching can be greatly reduced. It can contribute greatly.

この発明のプラズマエッチング装置用シリコン電極板を図面に基づいて具体的に説明する。
図１は、この発明の円板状シリコン電極板２１および通常のシールド支持電極１２を示す断面図である。この発明の円板状シリコン電極板２１は、従来から知られている中心線表面粗さ：１μｍ以下の円板状シリコン電極板の下面外周部に中心線表面粗さ：１μｍを越え〜１．６μｍの粗面Ａを形成したものであり、プラズマエッチングに際して、この粗面Ａを有するこの発明の円板状シリコン電極板２１は、図２に示されるように、シールド支持電極１２の支持部１４の上面ａで支持するようにセットされる。
図３は、この発明の大径部および小径部を有する鍔付き円板状シリコン電極板２２および通常のシールド支持電極１２を示す断面図である。この発明の大径部および小径部を有する鍔付き円板状シリコン電極板２２は、その小径部側面が粗面Ａとなっている。この発明の大径部および小径部を有する鍔付き円板状シリコン電極板２２は、プラズマエッチングに際して、図４に示されるように、鍔付き円板状シリコン電極板２２の鍔部１５がシールド支持電極１２の支持部１４の上面ａにより支持され、かつ小径部側面の粗面Ａが支持部１４の内周先端面ｂに対向するように鍔付き円板状シリコン電極板２２をセットする。 A silicon electrode plate for a plasma etching apparatus according to the present invention will be specifically described with reference to the drawings.
FIG. 1 is a cross-sectional view showing a disc-shaped silicon electrode plate 21 and a normal shield support electrode 12 of the present invention. The disk-shaped silicon electrode plate 21 of the present invention has a centerline surface roughness of more than 1 μm at the outer peripheral portion of the lower surface of a conventionally known centerline surface roughness of 1 μm or less. A disk-shaped silicon electrode plate 21 of the present invention having a rough surface A having a thickness of 6 μm and having the rough surface A during plasma etching is shown in FIG. It is set so that it may support on the upper surface a.
FIG. 3 is a cross-sectional view showing a flanged disk-like silicon electrode plate 22 having a large diameter portion and a small diameter portion and a normal shield support electrode 12 according to the present invention. The flanged disk-shaped silicon electrode plate 22 having a large diameter portion and a small diameter portion according to the present invention has a rough surface A on the side surface of the small diameter portion. As shown in FIG. 4, the flanged disk-shaped silicon electrode plate 22 having the large-diameter portion and the small-diameter portion of the present invention is shield-supported by the flange portion 15 of the flanged disk-shaped silicon electrode plate 22 as shown in FIG. The flanged disk-like silicon electrode plate 22 is set so that the rough surface A on the side surface of the small diameter portion is opposed to the inner peripheral tip surface b of the support portion 14 and is supported by the upper surface a of the support portion 14 of the electrode 12.

実施例１
市販のプラズマエッチング装置を用意した。さらに、外径：３００mm、厚さ：５mmを有し、中心線表面粗さＲａ：０．２μｍに鏡面仕上げされた単結晶シリコンからなる市販の円板状シリコン電極板を用意した。前記市販のプラズマエッチング装置のシールド支持電極１２の支持部１４の上面ａに接触するシリコン電極板２１の下面外周を粗く研削することにより表１に示される中心線表面粗さを有する粗面Ａを形成し、本発明シリコン電極板１〜３および比較シリコン電極板１を作製した。 Example 1
A commercially available plasma etching apparatus was prepared. Further, a commercially available disc-shaped silicon electrode plate made of single crystal silicon having an outer diameter of 300 mm, a thickness of 5 mm, and mirror-finished with a centerline surface roughness Ra of 0.2 μm was prepared. A rough surface A having a center line surface roughness shown in Table 1 is obtained by roughly grinding the outer periphery of the lower surface of the silicon electrode plate 21 that contacts the upper surface a of the support portion 14 of the shield support electrode 12 of the commercially available plasma etching apparatus. The silicon electrode plates 1 to 3 of the present invention and the comparative silicon electrode plate 1 were produced.

この本発明シリコン電極板１〜３を、図２に示されるように、シールド支持電極１２の支持部１４の上面ａで覆うようにセットし、さらにＳｉウエハを載置し、
チャンバー内圧力：１０−１Ｔｏｒｒ、
エッチングガス組成：９０sccmＣＨＦ３＋４sccmＯ２ ＋１５０sccmＨｅ、
高周波電力：２ｋＷ、
周波数：２０ｋＨｚ、
の条件で、５００時間プラズマエッチングを行ない、エッチング開始から１時間、１０時間、１５０時間、２００時間、２５０時間、３００時間、４００時間、４５０時間、５００時間経過した時点でのＳｉウエハ上のパーティクル数を測定し、その結果を表１に示した。前記パーティクル数の測定は、トプコン製のパーティクルカウンター（ＷＭ−３０００）を使用し、ウエハ表面をレーザ光により走査し、付着したパーティクルからの光散乱強度を測定することによりパーティクルの位置と大きさを認識することにより行った。 As shown in FIG. 2, the silicon electrode plates 1 to 3 of the present invention are set so as to be covered with the upper surface a of the support portion 14 of the shield support electrode 12, and a Si wafer is placed thereon.
Chamber internal pressure: 10 −1 Torr,
Etching gas composition: 90 sccm CHF 3 +4 sccm O 2 +150 sccm He,
High frequency power: 2kW
Frequency: 20kHz,
Under the conditions, plasma etching is performed for 500 hours, and particles on the Si wafer when 1 hour, 10 hours, 150 hours, 200 hours, 250 hours, 300 hours, 400 hours, 450 hours, and 500 hours have elapsed from the start of etching The numbers were measured and the results are shown in Table 1. The number of particles is measured using a TOPCON particle counter (WM-3000), the wafer surface is scanned with laser light, and the light scattering intensity from the adhered particles is measured to determine the position and size of the particles. Done by recognizing.

従来例１
一方、先に用意した市販のシリコン電極板をそのまま従来シリコン電極板１として使用し、これを実施例１で用意した市販のプラズマエッチング装置にセットし、実施例１と同様にしてプラズマエッチングを行ない、エッチング開始からエッチング開始から１時間、１０時間、１５０時間、２００時間、２５０時間、３００時間、４００時間、４５０時間、５００時間経過した時点でのＳｉウエハ上のパーティクル数を測定し、その結果を表１に示した。 Conventional Example 1
On the other hand, the commercially available silicon electrode plate prepared in advance is used as it is as the conventional silicon electrode plate 1, and this is set in the commercially available plasma etching apparatus prepared in Example 1, and plasma etching is performed in the same manner as in Example 1. From the start of etching, the number of particles on the Si wafer was measured after 1 hour, 10 hours, 150 hours, 200 hours, 250 hours, 300 hours, 400 hours, 450 hours, and 500 hours from the start of etching. Are shown in Table 1.

Figure 0004849236
Figure 0004849236

表１に示される結果から、従来シリコン電極板１および表面粗さがこの発明の範囲から越えている比較シリコン電極板１は、３００時間の使用でパーティクル数が１００個を越えているのに対し、本発明シリコン電極板１〜３は４００時間までパーティクル数は低いことから、本発明シリコン電極板１〜３は従来シリコン電極板１および比較シリコン電極板１に比べて電極の使用寿命が格段に延びていることが分かる。 From the results shown in Table 1, the conventional silicon electrode plate 1 and the comparative silicon electrode plate 1 whose surface roughness exceeds the scope of the present invention have a particle count exceeding 100 after 300 hours of use. Since the silicon electrode plates 1 to 3 of the present invention have a low number of particles up to 400 hours, the silicon electrode plates 1 to 3 of the present invention have a much longer service life than the conventional silicon electrode plate 1 and the comparative silicon electrode plate 1. You can see that it extends.

実施例２
全表面粗さＲａ：０．２μｍの鏡面仕上げされた単結晶シリコンからなる図３に示される市販の鍔付きシリコン電極板を用意し、この市販の鍔付きシリコン電極板の小径部側面を粗く研削することにより表２に示される中心線表面粗さを有する粗面Ａを形成し本発明シリコン電極板４〜６および比較シリコン電極板２を作製した。 Example 2
A commercially available ridged silicon electrode plate shown in FIG. 3 made of single-crystal silicon having a mirror finished surface with a total surface roughness Ra of 0.2 μm is prepared, and the small-diameter side surface of this commercially available ridged silicon electrode plate is roughly ground. By doing so, the rough surface A having the center line surface roughness shown in Table 2 was formed, and the silicon electrode plates 4 to 6 of the present invention and the comparative silicon electrode plate 2 were produced.

この本発明シリコン電極板４〜６の鍔部１５を図４に示されるようにプラズマエッチング装置のシールド支持電極１２の支持部１４の上面ａに接触するようにかつ鍔付き円板状シリコン電極板２２の小径部の粗面Ａが支持部１４の内周先端面ｂに対向するように鍔付き円板状シリコン電極板２２をセットした。さらにＳｉウエハを載置し、
チャンバー内圧力：１０−１Ｔｏｒｒ、
エッチングガス組成：９０sccmＣＨＦ３＋４sccmＯ２ ＋１５０sccmＨｅ、
高周波電力：２ｋＷ、
周波数：２０ｋＨｚ、
の条件で、５００時間プラズマエッチングを行ない、エッチング開始から１時間、１０時間、１５０時間、２００時間、２５０時間、３００時間、４００時間、４５０時間、５００時間経過した時点でのＳｉウエハ上のパーティクル数を測定し、その結果を表１に示した。前記パーティクル数の測定は、トプコン製のパーティクルカウンター（ＷＭ−３０００）を使用し、ウエハ表面をレーザ光により走査し、付着したパーティクルからの光散乱強度を測定することによりパーティクルの位置と大きさを認識することにより行った。 As shown in FIG. 4, the flanged portions 15 of the silicon electrode plates 4 to 6 of the present invention come into contact with the upper surface a of the support portion 14 of the shield support electrode 12 of the plasma etching apparatus, and the disk-shaped silicon electrode plate with a flange The barbed disk-shaped silicon electrode plate 22 was set so that the rough surface A of the small-diameter portion 22 was opposed to the inner peripheral tip surface b of the support portion 14. Furthermore, a Si wafer is placed,
Chamber internal pressure: 10 −1 Torr,
Etching gas composition: 90 sccm CHF 3 +4 sccm O 2 +150 sccm He,
High frequency power: 2kW
Frequency: 20kHz,
Under the conditions, plasma etching is performed for 500 hours, and particles on the Si wafer when 1 hour, 10 hours, 150 hours, 200 hours, 250 hours, 300 hours, 400 hours, 450 hours, and 500 hours have elapsed from the start of etching The numbers were measured and the results are shown in Table 1. The number of particles is measured using a TOPCON particle counter (WM-3000), the wafer surface is scanned with laser light, and the light scattering intensity from the adhered particles is measured to determine the position and size of the particles. Done by recognizing.

従来例２
一方、先に用意した市販の鍔付きシリコン電極板をそのまま従来シリコン電極板２として使用し、これを実施例２で用意した市販のプラズマエッチング装置にセットし、実施例２と同様にしてプラズマエッチングを行ない、エッチング開始からエッチング開始から１時間、１０時間、１５０時間、２００時間、２５０時間、３００時間、４００時間、４５０時間、５００時間経過した時点でのＳｉウエハ上のパーティクル数を測定し、その結果を表２に示した。 Conventional example 2
On the other hand, the commercially available silicon electrode plate with a hook previously prepared is used as the conventional silicon electrode plate 2 as it is, and this is set in the commercially available plasma etching apparatus prepared in Example 2, and plasma etching is performed in the same manner as in Example 2. The number of particles on the Si wafer at the time when 1 hour, 10 hours, 150 hours, 200 hours, 250 hours, 300 hours, 400 hours, 450 hours, and 500 hours have elapsed from the start of etching after the start of etching is measured, The results are shown in Table 2.

Figure 0004849236
Figure 0004849236

表２に示される結果から、従来シリコン電極板２および表面粗さがこの発明の範囲から越えている比較シリコン電極板２は、３００時間の使用でパーティクル数が１００個を越えているのに対し、本発明シリコン電極板４〜６は４００時間までパーティクル数は低いことから、本発明シリコン電極板４〜６は従来シリコン電極板２および比較にシリコン電極板２に比べて電極の寿命が格段に延びていることが分かる。 From the results shown in Table 2, the conventional silicon electrode plate 2 and the comparative silicon electrode plate 2 having a surface roughness exceeding the scope of the present invention have more than 100 particles after 300 hours of use. Since the silicon electrode plates 4 to 6 of the present invention have a low number of particles until 400 hours, the silicon electrode plates 4 to 6 of the present invention have a significantly longer electrode life than the conventional silicon electrode plate 2 and the silicon electrode plate 2 in comparison. You can see that it extends.

この発明の円板状シリコン電極板および通常のシールド支持電極を示す断面図である。It is sectional drawing which shows the disk-shaped silicon electrode plate of this invention, and a normal shield support electrode. この発明の円板状シリコン電極板をシールド支持電極の支持部にセットした状態を示す断面図である。It is sectional drawing which shows the state which set the disk-shaped silicon electrode plate of this invention to the support part of the shield support electrode. の発明の円板状シリコン電極板および通常のシールド支持電極を示す断面図である。It is sectional drawing which shows the disk-shaped silicon electrode plate of this invention, and a normal shield support electrode. この発明の円板状シリコン電極板をシールド支持電極の支持部にセットした状態を示す断面図である。It is sectional drawing which shows the state which set the disk-shaped silicon electrode plate of this invention to the support part of the shield support electrode. 通常のプラズマエッチング装置の断面概略説明図である。It is a cross-sectional schematic explanatory drawing of a normal plasma etching apparatus.

符号の説明Explanation of symbols

１：支持電極板、２：シリコン電極板、３：架台、４：ウエハ、５：貫通細孔、６：高周波電源、７：プラズマエッチングガス、８：真空チャンバー、９：静電チャック、１０：ブラズマ、１１：拡散部材、１２：シールド支持電極、１３：絶縁体、１４：支持部、１５：鍔部、Ａ：粗面、 1: support electrode plate, 2: silicon electrode plate, 3: mount, 4: wafer, 5: through-hole, 6: high-frequency power source, 7: plasma etching gas, 8: vacuum chamber, 9: electrostatic chuck, 10: Plasma: 11: Diffusion member, 12: Shield support electrode, 13: Insulator, 14: Support part, 15: Saddle part, A: Rough surface,

Claims (3)

表面の中心線表面粗さＲａが１μｍ以下の鏡面を有する円板状のシリコン電極板において、前記シリコン電極板の少なくともシールド支持電極の支持部上面により覆われる部分のシリコン電極板の中心線表面粗さＲａを１μｍ越え〜１．６μｍの粗面にしたことを特徴とするパーティクル発生の少ないプラズマエッチング装置用シリコン電極板。 In a disk-shaped silicon electrode plate having a mirror surface with a centerline surface roughness Ra of 1 μm or less, the surface roughness of the centerline surface of the silicon electrode plate covered by at least the upper surface of the support portion of the shield support electrode of the silicon electrode plate A silicon electrode plate for a plasma etching apparatus with less generation of particles, characterized by having a rough surface with a roughness Ra exceeding 1 μm to 1.6 μm. 表面の中心線面粗さＲａが１μｍ以下の鏡面を有する大径部および小径部を有する鍔付き円板状のシリコン電極板において、前記シリコン電極板の鍔部下面および小径部外周側面の中心線表面粗さＲａを１μｍ越え〜１．６μｍにしたことを特徴とするパーティクル発生の少ないプラズマエッチング装置用シリコン電極板。 In a flanged disk-shaped silicon electrode plate having a large-diameter portion and a small-diameter portion having a mirror surface with a centerline surface roughness Ra of 1 μm or less, the center lines of the bottom surface of the flange portion and the outer peripheral side surface of the small-diameter portion of the silicon electrode plate A silicon electrode plate for a plasma etching apparatus with less generation of particles, characterized in that the surface roughness Ra exceeds 1 μm to 1.6 μm. 前記プラズマエッチング装置用シリコン電極板は、単結晶シリコン、多結晶シリコンおよび柱状晶シリコンの内のいずれかからなる請求項１、２または３記載のパーティクル発生の少ないプラズマエッチング装置用シリコン電極板。 4. The silicon electrode plate for plasma etching apparatus with less generation of particles according to claim 1, wherein the silicon electrode plate for plasma etching apparatus is made of any one of single crystal silicon, polycrystalline silicon and columnar crystal silicon.
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