CN100454119C - Liquid crystal display device ,electronic device comprising same ,and its manufacturing method - Google Patents

Liquid crystal display device ,electronic device comprising same ,and its manufacturing method Download PDF

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Publication number
CN100454119C
CN100454119C CNB2004100445919A CN200410044591A CN100454119C CN 100454119 C CN100454119 C CN 100454119C CN B2004100445919 A CNB2004100445919 A CN B2004100445919A CN 200410044591 A CN200410044591 A CN 200410044591A CN 100454119 C CN100454119 C CN 100454119C
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data line
substrate
sweep trace
laser
spacing
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CN1550860A (en
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山崎舜平
小山润
荒井康行
渡边康子
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm.

Description

Liquid crystal display device, comprise its electronic apparatus, with and preparation method thereof
Technical field
The present invention relates to liquid crystal display device of a kind of display part that possesses information such as display image or literal and preparation method thereof.In addition, the invention still further relates to a kind of structure and preparation method thereof and installation method of driving circuit, this driving circuit transmits signal for each pixel of the pixel region that forms the display part.And, the invention still further relates to and have, and the structure and preparation method thereof and the installation method of the circuit that does not provide in this zone are provided liquid crystal display device such as the semiconductor element of thin film transistor (TFT) etc. with the zone of arranged.
Background technology
In possessing the liquid crystal display device of liquid crystal layer,, a kind of active matrix type displaying device with pixel region that thin film transistor (TFT) (TFT) is arranged with matrix shape is arranged as the method for the screen that forms information such as display image.This display device is utilized in the various electronic apparatus because advantage in light weight, thin thickness is arranged, and comprises notebook computer, portable computer, mobile phone, LCD TV etc.
Yet, form the technology of channel part because this amorphous semiconductor can have superior productivity to form large-sized substrate than low cost with amorphous semiconductor.But the field-effect mobility maximum that forms the thin film transistor (TFT) of channel part with amorphous semiconductor also can only obtain 1cm 2About/Vsec.Though such field-effect mobility can be used as the TFT that is used for switch that is provided in the pixel region and is utilized, can not require the element of the driving circuit of high speed operation as formation.
So driving circuit is installed the IC chip of making of monocrystalline substrate with TAB mode (TCP) or COG mode around this pixel region.The TAB mode refers to a kind of like this mode: with alloy be connected cushion (pad) part form projection (bump) driver IC and, bonding Copper Foil on polyimide, forming circuit by photomechanical production (photoengraving) technology, after being crossed the film circuit of film then, with encapsulating to form around the resin-sealed IC.The COG mode is to make the IC chip and the pattern of the circuit that forms on the substrate of display device coincide, and directly pastes to realize the mode of electrical connection.
The COG mode realizes that the driving circuit of installing is to form a plurality of TFT that make of non-single crystalline semiconductor material on glass substrate or quartz substrate, and is divided into elongated shape and forms.Afterwards, the driving circuit of the elongated shape that will cut apart is installed to (for example with reference to patent document 1) on the substrate.
Patent document 1
Hei?11-160734
Though its size of circular silicon chip all has increase every year, maximum its diameter of silicon chip even reach about 300mm, the quantity of the square drive device IC that can obtain still is restricted.And the matrix of conventional driver IC is a silicon chip, and the temperature coefficient of itself and glass substrate is different, can produce bending etc. after bonding, and because the defectives such as increase of contact resistance, and the stress that produces, cause the reliability reduction of element.
Summary of the invention
At the problems referred to above, the present invention moves ahead.The objective of the invention is when adopting TAB mode or COG mode, by on the rectangle glass substrate, form can high speed operation a plurality of semiconductor elements, and use these a plurality of semiconductor elements to form a plurality of driver ICs, liquid crystal display device that a kind of productivity has been enhanced and preparation method thereof is provided.
The present invention adopts the method for hereinafter describing in order to address the above problem.
The feature of structure of the present invention is: first substrate with the pixel region that is furnished with thin film transistor (TFT) in each pixel; Be formed with second substrate of reverse electrode corresponding to described pixel region; And the 3rd substrate that is formed with scan line side driving circuit or data line side drive circuit, wherein, described scan line side driving circuit and described data line side drive circuit have the thin film transistor (TFT) that forms the channel formation region territory with crystalline semiconductor, and this crystalline semiconductor has at the upwardly extending grain boundary in the side parallel with the raceway groove length direction (grain boundary), and the thickness of gate insulating film that is provided at the thin film transistor (TFT) in described scan line side driving circuit and the described data line side drive circuit is different mutually.
A feature of the present invention is: a kind of liquid crystal display device, and it comprises:
First substrate has the pixel region that has disposed first semiconductor element on it;
Second substrate is formed with the reverse electrode corresponding to described pixel region on it;
The 3rd substrate, this substrate is provided at the outside of the described pixel region of described first substrate, and disposes a plurality of second semiconductor elements that form with crystalline semiconductor,
Wherein, clamping has liquid crystal layer between described first substrate and second substrate,
And wherein, the grain boundary of described crystalline semiconductor extends along the direction of electronics in described a plurality of second semiconductor elements or hole flow, and described a plurality of second semiconductor element comprises with the film formed thin film transistor (TFT) of the gate insulation of first thickness with the film formed thin film transistor (TFT) of the gate insulation of second thickness.
A feature of the present invention is: a kind of liquid crystal display device: it comprises:
First substrate has disposed the transistorized pixel region of the first film on it;
Second substrate is formed with the reverse electrode corresponding to described pixel region on it;
The 3rd substrate, this substrate is provided at the outside of the described pixel region of described first substrate, and disposes a plurality of second thin film transistor (TFT)s that form its channel part with crystalline semiconductor,
Wherein, clamping has liquid crystal layer between described first substrate and second substrate,
And wherein, the grain boundary of described crystalline semiconductor extends along the direction of electronics in described a plurality of second thin film transistor (TFT)s or hole flow, and described a plurality of second thin film transistor (TFT) comprises with the film formed thin film transistor (TFT) of the gate insulation of first thickness with the film formed thin film transistor (TFT) of the gate insulation of second thickness.
A feature of the present invention is: a kind of method for making of liquid crystal display device, and it may further comprise the steps: form pixel region on first substrate, this pixel region has disposed first semiconductor element that forms with amorphous semiconductor or organic semiconductor;
Behind the reverse electrode of formation and described pixel region correspondence on second substrate, first substrate and second substrate bonding are in the same place;
On the 3rd substrate, form driving circuit and a plurality of driver IC, drive circuitry arrangement wherein a plurality of second semiconductor elements that form with crystalline semiconductor, and driver IC comprises input terminal and the lead-out terminal that belongs to described driving circuit;
Then, be divided into described a plurality of driver ICs single; Described driver IC is adhered to the described pixel region that is formed on described first substrate around,
Wherein, described crystalline semiconductor forms by the laser of irradiation continuous oscillation.
In addition, described the 3rd substrate comprises first area that is formed with described crystalline semiconductor and the second area that does not form described crystalline semiconductor, and provide described driving circuit in the described first area, provide input terminal and lead-out terminal in the described second area.
In addition, described the 3rd substrate comprises first area that is formed with described crystalline semiconductor and the second area that does not form described crystalline semiconductor, and provide described driving circuit in the described first area, provide input terminal and lead-out terminal in the described second area, and, the minor face of described the 3rd substrate is 1 to 6mm, and the minor face of described first area is 0.5 to 1mm.
In addition, the minor face of described the 3rd substrate is 1 to 6mm, is provided at input terminal on described the 3rd substrate and lead-out terminal and pel spacing and forms with uniform distances.And the long limit of described the 3rd substrate and the minor face of described pixel region or long edge lengths are identical.
Described crystalline semiconductor forms by irradiating laser, and the oscillator that produces this laser is the solid state laser of continuous oscillation.Specifically, described oscillator is selected from YAG laser instrument, the YVO of continuous oscillation 4Laser instrument, YLF Lasers device, YAlO 3Laser instrument, amorphous laser, ruby laser, alexandrite laser, Ti: one or more in the sapphire laser perhaps are selected from excimer laser, Ar laser instrument, Kr laser instrument, the CO of continuous oscillation 2In the laser instrument one or more.
In addition, a feature of the present invention is: use the device that comprises a plurality of laser oscillators and diffraction optical element (Diffractive Optical Element) to carry out laser crystallization.And each laser beam of launching from a plurality of laser oscillators overlaps so that the energy is overlapping.This superimposed laser demonstrates the distribution of the rectangle (bell is hood-shaped, top hat) at long axis direction through diffraction optical element, and the present invention uses the laser that shows this distribution to carry out laser crystallization.According to above-mentioned feature, can use the few crystalline semiconductor in micro-crystallization zone.
If use said apparatus to launch the laser of continuous oscillation, then can use the few and poly semiconductor that crystal grain is big of crystal defect to produce transistor.And, because mobility and answer speed are superior, can realize high-speed driving, thus the liquid crystal display device that can provide the frequency of operation of element to be enhanced.In addition, because characteristic is inhomogeneous few, so can realize high reliability.In addition, the frequency for further raising work preferably makes the direction of scanning of transistorized raceway groove length direction and laser consistent.This is because in the laser crystallization technology of using the continuous oscillation laser instrument, when the direction of scanning with respect to substrate of transistorized raceway groove length direction and laser substantially parallel (being preferably in-30 ° between 30 °), can obtain the highest mobility.In addition, the raceway groove length direction is meant the direction that electric current flows in the channel formation region territory, and in other words, the raceway groove length direction is consistent with the electric charge moving direction.The transistor of making by above-mentioned steps has the active coating that poly semiconductor that crystal grain extends constitutes on channel direction, this forms along channel direction substantially with regard to meaning grain boundary.
The present invention also has a feature to be: will comprise and be formed on above-mentioned on the glass substrate and have the semiconductor element of good crystalline crystalline semiconductor to be used in driver IC.The circuit of suitable use crystalline semiconductor not only comprises the driving circuit as signal-line driving circuit and scan line drive circuit etc., also comprises the logical circuit that constitutes resistor, demoder, counter, frequency dividing circuit, storer etc.In addition, if owing to make the length of minor face of the fabric width of laser beam of laser instrument and driver IC identical, then can provide liquid crystal display device that productivity has been enhanced with and preparation method thereof, so this method is preferred.
The present invention also has a feature to be: the driving circuit and the driving circuit that is arranged in scan line side, the thickness difference of the film of its thin film transistor (TFT) that are arranged in the data line side.This is for respective data lines side and scan line side the thickness of film to be had different separately requirements.Specifically, data line drive circuit is owing to drive with the frequency of (for example more than the 65MHz) more than the driving voltage of 3V, the 50MHz, so the thickness setting of gate insulating film is 20 to 70nm, and channel length is set at 0.3 to 1 μ m.On the other hand, scan line drive circuit is owing to only drive with the driving frequency about the centesimal 100kMHz of data line drive circuit, so the thickness setting of gate insulating film is 150 to 250nm, and channel length is set at 1 to 2 μ m.According to said structure, can provide corresponding to the driver IC of the frequency of operation of each driving circuit and the liquid crystal display device that comprises this driver IC.
The present invention with said structure, the thin film transistor (TFT) of the characteristic good that use forms by the laser launched from the continuous oscillation laser instrument of irradiation, can provide a kind of liquid crystal display device that driver IC that can high speed operation is installed with and preparation method thereof.In addition owing to can on the large-sized substrate of rectangle, make a plurality of driver ICs, so can provide cheaply liquid crystal display device with and preparation method thereof.And, according to the present invention, come mounting driver IC by adopting COG mode or TAB mode, can provide realized small-sized, as thin as a wafer, the liquid crystal display device of light and handy and narrow frame with and preparation method thereof.
Description of drawings
In the accompanying drawing:
Figure 1A to Fig. 1 E is the figure that explains liquid crystal display device of the present invention and preparation method thereof;
Fig. 2 A and Fig. 2 B are the figure that explains liquid crystal display device of the present invention and preparation method thereof;
Fig. 3 A to Fig. 3 D is the figure that driver IC is shown;
Fig. 4 A and 4B are the mask design figure of shift register;
Fig. 5 A and 5B are the figure that explains liquid crystal display device of the present invention and preparation method thereof;
Fig. 6 A to Fig. 6 C is the figure that the profile of linear bundle is shown;
Fig. 7 A and 7B are the figure that the method for making of liquid crystal display device of the present invention is shown;
Fig. 8 A to Fig. 8 D is the figure that the method for making of liquid crystal display device of the present invention is shown;
Fig. 9 A to Fig. 9 E is the figure that the method for making of liquid crystal display device of the present invention is shown;
Figure 10 A to Figure 10 D is illustrated in the figure that makes thrust on the input and output terminal of driver IC;
Figure 11 A to Figure 11 B is the figure that is connected that explains pixel region and FPC and driver IC;
Figure 12 A and 12B are the figure that explains liquid crystal display device of the present invention;
Figure 13 is the figure that explains driver IC of the present invention;
Figure 14 A and 14B are vertical view and its equivalent circuit diagrams of pixel region;
Figure 15 A to Figure 15 C is the cross-sectional view of the thin film transistor (TFT) that possesses of pixel region;
Figure 16 A to Figure 16 D is the cross-sectional view of the thin film transistor (TFT) that possesses of pixel region;
Figure 17 is the figure that has carried the electronic apparatus of liquid crystal display device of the present invention;
Figure 18 is the cross-sectional view of liquid crystal display device of the present invention;
Figure 19 A to Figure 19 C has used electronic apparatus figure of the present invention;
Figure 20 A to Figure 20 D has used electronic apparatus figure of the present invention;
Figure 21 A and 21B are the photo and the mode charts thereof of crystalline semiconductor.
Selection figure of the present invention is Fig. 1
Embodiment
Describe embodiment of the present invention pattern below with reference to the accompanying drawings in detail.Notice that the present invention can be with multiple multi-form being performed, and so long as same field staff just readily understands such fact: form of the present invention and content change can not broken away from aim of the present invention and scope.So explanation of the invention is not limited to the content put down in writing in the embodiment pattern.In addition, in Shuo Ming the structure, the symbol of expression same parts is used among the different figure jointly hereinafter.
Embodiment pattern 1
Key concept of the present invention will award explanation with reference to the oblique view of Figure 1A.The pixel region 1002 of information such as display text or image is provided on substrate 1001.The input and output terminal that on the 3rd substrate 1006, provides a plurality of driving circuits and connect these a plurality of driving circuits.Each driving circuit and form a unit (unit) corresponding to the input terminal of this driving circuit, lead-out terminal (input and output terminal) is divided into elongated shape or rectangular-shaped with the 3rd substrate 1006, can obtain a plurality of driver ICs.Then, this driver IC is sticked on first substrate 1001, just finished liquid crystal display device.Expression is equipped with driver IC 1010 that is equivalent to scan line drive circuit and the pattern that is equivalent to the driver IC 1009 of signal-line driving circuit in Fig. 1 (A).Note that it is desirable to that the structure of driver IC is different from the structure of scan line side and signal line side.
Figure 1B is the actual driver IC of pasting of expression, the vertical view of the liquid crystal display device that the input and output terminal of this driver IC inside and pixel region 1002 are electrically connected.Form pixel region 1002 on first substrate 1001, the therebetween liquid crystal layer is pasted second substrate 110 that is formed with reverse electrode on this pixel region 1002.In providing the situation of liquid crystal layer, though separation material (spacer) is depended at the interval of first substrate 1001 and second substrate 110, under the situation of nematic crystal 3 to 8 μ m, under the situation of smectic (smetic) liquid crystal 1 to 4 μ m.First substrate 1001 and second substrate, the 110 preferred alkali-free glasss that use, such as aluminium pyrex or barium pyrex etc., because its thickness is 0.3 to 1.1mm (being typically 0.7mm), so comparatively speaking, can ignore from the thickness of seeing liquid crystal layer in appearance.
In pixel region 1002, scanning line-group 108 and data line-group 109 intersect to form rectangle, and TFT is arranged corresponding to each cross section.At this, though the structure of the TFT that is arranged does not have special restriction, typical preferred the use with the TFT of amorphous silicon layer as the wrong arrange type of reciprocal cross of active coating.Amorphous silicon layer can form under 300 ℃ or lower temperature with plasma CVD method, for example, even external dimensions is the alkali-free glass substrate of 550X650mm, also can form the thickness that be used for forming the required film of TFT at tens seconds.Such a manufacturing technology is when making large-sized display device, quite effective.
In the outside of pixel region 1002, the driver IC 1009,1010 that is made of driving circuit is installed.The 1009th, the driving circuit of data line side, the 1010th, the driving circuit of scan line side.In order to form panchromatic pixel region corresponding to RGB, XGA (extended graphics array) progression in this way, then the quantity of data line is 3072, needs 768 in scan line side.In addition, support high-resolution UXGA progression in this way, then need 4800 and 1200 respectively.In the present embodiment pattern, because the one side of pixel region 1002 and the long limit of driver IC are set at identical length, so preferably the spacing with the lead-out terminal of driver IC is consistent for the spacing of data line and sweep trace.Do like this, the edge that just there is no need at pixel region 1002 is that the boundary forms extension line 107 with every several (severalblock), can produce with high finished product rate on manufacturing.And because the quantity of the driver IC of installing reduces, its reliability increases.
And, if on a plurality of the 3rd substrates 1006 that are produced on rectangular shape of these driver ICs, owing to can form in a large number, so see it is preferred from improving productive viewpoint.Therefore, preferably use large-sized substrate, for example preferred large-sized substrate of using monolateral 300mm to 1000mm as the 3rd substrate 1006.Then, form a plurality of circuit patterns, cutting apart the back taking-up, just finished driver IC at last a driving circuit section and a unit of input and output terminal composition.The length of the minor face of this driver IC is 1 to 6mm, and the length on long limit is 10 to 60mm.
A feature of the present invention is to form above-mentioned driver IC with crystalline semiconductor, and wherein said crystalline semiconductor forms by the laser of irradiation continuous oscillation.So,, use the solid state laser or the gas laser of continuous oscillation as the oscillator that generates this laser.In addition, the present invention the fabric width of laser spot (specifically be 1 to 6mm) is set ground and driver IC minor face length or to be arranged in the length of minor face of the driving circuit on the driver IC identical.According to structure of the present invention, if the laser beam of scan laser once, then can form a driver IC at least, so can provide liquid crystal display device that productivity is enhanced with and preparation method thereof.
In addition, utilize as shine the laser of continuous oscillation, elongated grain boundary on its direction of scanning, parallel for the bearing of trend that makes grain boundary with the raceway groove length direction, carry out the pattern processing of semiconductor layer.So, can form with the crystalline semiconductor that obtains sufficient electrical characteristics is the thin film transistor (TFT) of active coating.
Fig. 1 C is the vertical view that thin film transistor (TFT) is fabricated on driver IC inside, is illustrated in the long axis direction of crystallization crystal grain and raceway groove length direction under unidirectional situation, carries out the state of pattern processing.
In addition, a feature of the present invention is the thickness that changes the film of thin film transistor (TFT) according to driving circuit that is arranged in the data line side and the driving circuit that is arranged in scan line side.As one of them example, Fig. 1 D represents the cross-sectional view of the thin film transistor (TFT) of scan line side driving circuit and data line side drive circuit.This is the structure of the different separately requirement of response data line side and scan line side, specifically, data line drive circuit is because with the frequency drives of the driving voltage of 3V, 50MHz or higher (for example 65MHz or higher), thus with the thickness setting of the gate insulating film of data line drive circuit be 20 to 70nm, raceway groove length is set at 0.3 to 1 μ m.On the other hand, scan line drive circuit is compared with data line drive circuit, because it only uses the centesimal driving frequency of data line drive circuit, promptly drives about 100kMHz, so with the thickness setting of the gate insulating film of scan line drive circuit is 150 to 250nm, long 1 to the 2 μ m of raceway groove.According to said structure, can provide the driver IC of frequency of operation of corresponding each driving circuit and the liquid crystal display device that this driver IC is installed.
Note that the relative IC chip of driver IC, its superiority is the length on its long limit.Like this, by using the driver IC on long limit 15 to 80mm, with using the IC chip that requirement is installed corresponding to pixel region to compare, the quantity of the driver IC of use is few, so can improve the yield rate of the manufacturing.In addition, the present invention forms driver IC on glass substrate, owing to do not limit shape as the substrate of parent, so can not bring negative effect to productivity.These characteristics are compared as the situation of following circular silicon wafer to manufacture and going out the IC chip, are sizable advantages.
Cut apart the method that is formed on the driving circuit on the 3rd substrate 1006 and do not have particular restriction, can be shown in Fig. 2 A, cutting apart on the both direction in length and breadth, to obtain a plurality of driver ICs from the 3rd substrate 1006, then, shown in Fig. 2 B, paste a plurality of driver ICs in data line side and scan line side both sides.
Though above-mentioned Fig. 1,2 shows the liquid crystal display device that adopts the COG mode, the present invention also is applicable to the liquid crystal display device that adopts the TAB mode.At this, will adopt the situation of the liquid crystal display device of TAB mode with reference to figure 5 explanations.In the situation of TAB mode and the wiring that is electrically connected of pixel portion 1002 be exposed, FPC is connected in this wiring that comes out, driver IC 1007 to 1009 is connected on this FPC.Fig. 5 A represents to arrange a plurality of FPC 1011, and driver IC 1007,1008 is connected the situation on this FPC 1011.Fig. 5 B is illustrated in the situation of arranging a driver IC 1009 on the FPC 1012.In the situation that adopts the latter,, preferably provide the sheet metal of fixed drive IC 1009 together owing to the problem of intensity.
Note, as the drive condition of this driver IC, can, give one example, be-0.5 to 30V such as supply voltage VDD; VDD-VEE is-0.5 to 28V; VEE is-17 to 0.5V; Input voltage VEE is-0.5 to VDD+0.5; Input current is ± 10mA; Work under the condition of output current for ± 10mA.
Embodiment pattern 2
Hereinafter reference diagram is illustrated embodiment of the present invention pattern.
A feature of the driver IC that uses among the present invention is, on the substrate of rectangular shape, form amorphous semiconductor, and this amorphous semiconductor of laser crystallization method crystallization by using the continuous oscillation laser instrument to be obtaining crystalline semiconductor, of the present inventionly uses this crystalline semiconductor as this driver IC.At this, will be with reference to the situation of figure 3A explanation with the amorphous semiconductor on laser illumination the 3rd substrate 1006.In addition, the present invention the fabric width of laser spot (specifically be 1 to 6mm) is set ground and driver IC minor face length or to be arranged in the length of minor face of the driving circuit on the driver IC identical.According to such structure, use the crystalline semiconductor on the 3rd substrate 1006, the length that can form a plurality of minor faces is 1 to 6mm driver IC.These driver ICs are to cut apart and form along the processing line that marks with the glass scriber.So the driver IC in a group is arranged by 0.5 to 1mm border blank (margin).If use such job operation, even for example use the liquid crystal glass substrate of first production line of 300X400mm, also can from the group of 127X127mm, produce the driver IC of 360 2X20mm, just can obtain 2160 driver ICs from a substrate.
Then, will illustrate with the amorphous semiconductor on laser illumination the 3rd substrate 1006 to form the situation of crystalline semiconductor with Fig. 3 B.Usually Laser Power Supply density distributes to be gathered into light spot form.In most of the cases, to surrounding edge, energy resource density tapers off state from the core of laser focus point.So the semiconductor quilt that is focused an irradiation of core is crystallization well, and superior electrical characteristics are arranged.But, by the semiconductor of the laser radiation of the limit source range lower,, can not melt fully because the energy resource density of laser is not enough than core energy resource density, therefore can only be by micritization.In the zone of micritization, owing to can not obtain sufficient electrical characteristics, so be not suitable for use in active coating.
At this, shown in Fig. 3 C, that supposes core is zone 1024 by the part of the high laser radiation of energy resource density, and the zone outside this zone is 1022,1023 o'clock, with the crystalline semiconductor formation driving circuit that well-crystallized is arranged in zone 1024.And, remove 1022,1023 semiconductors that form in the zone, form input terminal 1020 and lead-out terminal 1021 in this zone.The minor face that note that zone 1024 is about 0.5 to 1mm.That is to say the same length in the zone that the length of the minor face of driving circuit and the energy resource density of core are high.So, irradiating laser, the heart is partly produced the crystalline semiconductor of well-crystallized therein, and has the crystalline semiconductor of well-crystallized to constitute driving circuit with this.
Note that the transistorized channel formation region territory or the source/drain region that constitute driving circuit form with crystalline semiconductor, this crystalline semiconductor forms by the continuous oscillation laser instrument.And, in that being carried out pattern, this crystalline semiconductor adds man-hour, make the channel length unanimity of all thin film transistor (TFT)s.The thin film transistor (TFT) of the above-mentioned pattern processing of process is because crystallization crystal grain is gone up extension in the direction (raceway groove length direction) of electronics or hole flow, so can high speed operation.
Fig. 3 D is the cross-sectional view along the cutting of the B-B ' line among Fig. 3 C.Spacing with 40 to 100 μ m forms a plurality of lead-out terminals 1021 that are connected with signal line disposed in pixel region or sweep trace.Similarly, form the input terminal 1020 of necessary amount.It is the square or rectangular of 30 to 100 μ m that these input terminals 1020 and lead-out terminal 1021 are formed length on one side.
Then, with reference to figure 4, illustrate as an example of driving circuit 1025, mask design (mask layout) figure when making the shift register that constitutes by a plurality of transistors.Shift register is vertically connected by the circuit of a segmentation and constitutes, and in each segmentation, the signal of CK and CKB is alternately imported.The circuit of a segmentation is corresponding to the pixel that is arranged to row in rectangular-shaped a plurality of pixels.So, the length of the minor face of a segmentation preferably set identical with the length of pel spacing.Like this, the spacing of the lead-out terminal of driver IC just can be configured to identical with the spacing of sweep trace or data line.According to such structure, the edge that just there is no need at pixel region is that the boundary forms extension line with every several (several block), from the angle of manufacturing, can make with high finished product rate.
Note that producing a plurality of driver ICs on large-sized substrate also has its problem, is exactly exposure technique.The design rule of driver IC is 0.3 to 2 μ m, preferred 0.35 to 1 μ m.When forming driver IC, need expose to high productivity with above-mentioned design rule.As for Exposure mode, though contiguous (proximity) mode and projection pattern have superiority, but its shortcoming is arranged on boosting productivity, just need the mask of large scale, high definition, and be difficult to obtain high resolving power or overlapping identical precision.On the other hand, stepping (stepper) mode can be carried out disposable exposure to the zone at 44mm angle or the zone of 54X30mm such as with the resolution of i line (365nm) with 0.7 μ m.Corresponding to this, if the length on the long limit of driver IC is set in this exposure range, even submicron pattern (submicron pattern) also can be carried out exposure expeditiously.
The embodiment mode 3
The present embodiment pattern will illustrate uses continuous oscillation laser instrument (continuous wavelaser) to carry out the situation of laser crystallization.
The continuous oscillation laser instrument preferably uses wavelength 550nm or the high laser instrument of output stability still less.Nd:YVO for example 4The second harmonic of the second harmonic of the second harmonic of laser instrument, Nd:YAG laser instrument, Nd:YLF laser instrument, Nd: the second harmonic of amorphous laser, Nd:YalO 3The second harmonic of laser instrument or Ar laser instrument etc.In addition, more higher hamonic wave, ruby laser, alexandrite laser, the Ti of above-mentioned laser: the excimer laser of sapphire laser, continuous oscillation, Kr laser instrument, CO 2The He-Cd laser device of laser instrument, continuous oscillation, copper-vapor laser or golden vapor laser also can be used.Perhaps use one or more the laser instrument in the above-mentioned laser instrument.
A feature of the present invention is overlapping laser beam of launching from a plurality of laser oscillators.Usually, the distribution of the energy resource density of laser is to assign to surrounding edge from central division, is the trend that reduces gradually.A feature of the present invention is so that this energy resource density is overlapping by overlapping a plurality of laser beam.By utilizing above-mentioned feature and diffraction optical element (Diffractive Optical Element), can be formed on the profile (profile) that shows rectangle (bell is hood-shaped, top hat) on the long axis direction, length is 0.5 to 1mm linear bundle.
Like this, for overlapping laser beam to carry out laser crystallization, use many homogenizers (homogenizer) that are equipped with laser oscillators, λ/2 wavelength plates, transmitting mirror, polarizer, constitute by diffraction optical element etc., wait the device of the zoom system, pancreatic system, condenser system etc. of formation by cylindrical lens (cylindrical lens).
Each laser beam of launching from many laser oscillators has identical sheet light direction.So one or more laser beam transmissions are crossed λ/2 wavelength plates in a plurality of laser beam, 90 ° of rotations take place in polarization direction.Then, with the overlapping a plurality of laser beam of polarizer.The laser beam that stacks up forms linear bundle by homogenizer, and this linear bundle is irradiated on the amorphous semiconductor on the substrate.
Beam profile in the shadow surface (beam profile) is expressed in Fig. 6.Fig. 6 A is an oblique perspective figure.From long axis direction is rectangle (Fig. 6 B).In addition, from short-axis direction be the profile (Fig. 6 C) of approximate Gaussian (Gaussian) shape.On long axis direction, form the profile of rectangle by the homogenizer that uses diffraction optical element.
In addition,, linear bundle is staggered with suitable irradiation spacing on long axis direction, on long axis direction, scan with vertical direction for the semiconductor film on the crystallization substrate.In this operation, laser oscillator and optical system (λ/2 wavelength plates, catoptron, polarizer, homogenizer, zoom system, pancreatic system and condenser system) are fixed, and use the X-Y platform to move substrate, thereby at the substrate upper tracer pencil of forms.
Figure 21 A is a photo, and above-mentioned optical system and YVO are used in expression 4Laser instrument, by laser crystallization crystalline semiconductor.Figure 21 B is the mode chart of this photo.Laser crystallization carries out under following situation: power is 14.4W; Sweep velocity is 35cm/sec; Beam length is 0.75mm.Shown in Figure 21 A, 21B, can learn, as use above-mentioned optical system then almost do not have the micro-crystallization zone, can obtain the crystalline semiconductor of well-crystallized.
A feature of the present invention is to use the device that is equipped with a plurality of laser oscillators and diffraction optical element to carry out laser crystallization.And it is that overlapping each laser beam that emits from a plurality of laser oscillators is so that can the source distribution stack that the present invention also has a feature.This laser beam that is applied shows the distribution of rectangle (bell is hood-shaped, top hat) by diffraction optical element on long axis direction, a laser instrument that feature is to use demonstration to distribute as mentioned above of the present invention carries out laser crystallization.According to above-mentioned feature, can produce the few crystalline semiconductor in micro-crystallization zone.
The present embodiment pattern can with above-mentioned embodiment pattern combination in any.
Embodiment
Embodiment 1
In the present embodiment, will use the continuous oscillation laser instrument to form the manufacture craft of thin film transistor (TFT) with reference to figure 7A to Fig. 9 E explanation.
At first, shown in Fig. 7 A, on substrate 300, form counterdie 301.The glass substrate of use barium pyrex or aluminium pyrex etc., quartz substrate, SUS substrate (at the bottom of the stainless steel lining) are as substrate 300.In addition, plastics etc. have the substrate that is made of synthetic resin of bendability, though in general, compare with above-mentioned substrate, and the low trend of heat resisting temperature is arranged, if can tolerate the treatment temperature in the manufacture craft, also can be utilized.
It is to be diffused in the semiconductor that will form thereon in order to prevent to be included in alkaline metal such as Na in the substrate 300 or earth alkali metal that counterdie 301 is provided, thereby causes bringing negative effect to property of semiconductor element.So these counterdie 301 usefulness can suppress alkaline metal or earth alkali metal and be diffused into the monox that will form semiconductor film thereon or dielectric film such as silicon nitride, nitride-monox and form.Present embodiment forms the silicon oxynitride film of thick 10-400nm by plasma CVD method.
Note that counterdie 301 can be the dielectric film of single layer structure, also can be stacked multilayer insulating film and the rhythmo structure that forms.In addition, when the substrate that adopts glass substrate, SUS substrate or plastic etc. how much to comprise alkaline metal or earth alkali metal was used as substrate, from preventing the angle of diffusion of contaminants, it was effective that counterdie is provided.But, under the situation of the unchallenged substrates of diffusion of contaminants such as employing quartz substrate, can save this counterdie.
Then, on counterdie 301, form semiconductor film 302.The thickness of setting this semiconductor film is 25 to 100nm (preferred 30 to 60nm).Semiconductor film 302 uses silicon or SiGe.Afterwards, be used for 500 ℃, 1 hour thermal treatment of dehydrogenation.
Then, adopt laser irradiation device, crystallizing amorphous semiconductor film 302, thus form crystalline semiconductor 303.In this case, can use the solid state laser that can carry out continuous oscillation, and use second harmonic with respect to first-harmonic to four-time harmonic, so that obtain the big crystal of crystallite dimension.For example, typically, preferably use Nd:YVO 4The second harmonic (532nm) or the third harmonic (355nm) of laser instrument (first-harmonic is 1064nm).Specifically, will be with nonlinear optical element from continuous oscillation type YVO 4The laser instrument emitted laser converts harmonic wave to, to obtain the output energy of 10W.Also have YVO in addition 4Thereby crystal and nonlinear optical element place the method for resonator cavity emission harmonic wave.And, with optical system harmonic forms is become the laser that has rectangle or elliptical shape on irradiating surface, and laser irradiation semiconductor film 302.The energy density of this moment need be about 0.01-100MW/cm 2(0.1-10MW/cm preferably 2).Then, with the speed of about 10-2000cm/s corresponding to laser, the amorphous semiconductor that relatively moves, thus reach the purpose of irradiation semiconductor film.
Then, according to desirable pattern, the crystalline semiconductor that etching obtains by above step, thus form semiconductor layer 304 to 307.Afterwards, form the gate insulating film 308 that covers semiconductor layer 304 to 307.As gate insulating film 308, for example form thick 30 to 200nm siliceous dielectric film with sputtering method.
Secondly, the method for the making crystalline semiconductor different with said method will be described with Fig. 8.This method is because until the step of formation amorphous semiconductor film 302 is identical, so dispense related description at this.
The nickel acetate solution 310 that this method will contain 1-100ppm weight nickel with spin-coating method is coated in the surface of amorphous semiconductor film 302.Much less, the method for adding catalyzer is not subject to said method, can adopt sputtering method, evaporation deposition method, plasma processing method to wait and add yet.
Then, carry out 400 to 650 degree, 4 to 24 hours, such as with 550 degree, 14 hours heat treated.According to this heat treated, formed from being coated with the molten surface of nickel acetate, in a longitudinal direction the crystalline semiconductor that promoted of crystallization towards substrate 300.Though, except nickel, can also use germanium (Ge), iron (Fe), palladium (Pd), tin (Sn), plumbous (Pb), cobalt (Co), platinum (Pt), copper (Cu), gold (Au) etc. at this use nickel (Ni), as catalytic elements.
Then, as mentioned above, use the laser instrument of continuous oscillation to carry out laser radiation, thereby form crystalline semiconductor 311 (Fig. 8 B).Note that use catalytic elements by crystallization crystalline semiconductor 311 in, can think that catalytic elements (being nickel (Ni) at this) is with about 1 * 10 19Atoms/cm 3Concentration be comprised in wherein.At this, draw the gettering that is present in the catalytic elements in the crystalline semiconductor 311 subsequently and handle.
At first, form oxide film 312 (Fig. 8 C) on the surface of crystalline semiconductor 311.Form thick about 1 to 10nm oxide film 312, it is coarse to prevent like this in the etch process of back that surface because of etching crystalline semiconductor 311 causes.
Can form oxide film 312 with well-known method.The for example aqueous solution of mixing with sulfuric acid, hydrochloric acid, nitric acid etc. with hydrogen peroxide solution or the surface of Ozone Water oxidation crystalline semiconductor 311, thereby formation oxide film.Also can wait and form oxide film by the Cement Composite Treated by Plasma in oxygen atmosphere, heat treated or irradiating ultraviolet light.Again or, separately and exclusively form oxide film with plasma CVD method, sputtering method or evaporation deposition method etc.
Then, formation thickness is the semiconductor 313 of 25-250nm on the oxide film 312 by sputtering at, and it is 1 * 10 that this semiconductor 313 contains concentration 20Atoms/cm 3Or above rare gas element, be used for gettering.In order to improve the etching selectivity with respect to crystalline semiconductor 311 of the semiconductor 313 that is used for gettering, the density of film of semiconductor 313 that is used for gettering is preferably with lower than crystalline semiconductor 311.As the rare gas element, adopt one or more elements that are selected from helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe).
Then, carry out the thermal treatment of furnace annealing or RTA, to realize gettering process.In the situation of carrying out furnace annealing, in blanket of nitrogen, under 450-600 ℃, heat-treated 0.5-12 hour.In adopting the situation of RTA, the lamp source that is used to heat is lighted 1-60 second (preferred 30-60 second), and repeats this cycle 1-10 time (preferably 2-6 time).Though the luminous intensity of lamp source is arbitrarily, this luminous intensity will make semiconductor film be rapidly heated to about 600-1000 ℃, preferably about 700-750 ℃ in moment.
By heat treated, the catalytic elements in the crystalline semiconductor 311 moves to the semiconductor 313 that is used for gettering as shown by arrows like that by diffusion, has just realized gettering.
After the gettering process, optionally etching is used for the semiconductor 313 of gettering to remove this part.As engraving method, can carry out under situation without plasma, use ClF 3Dry etching or utilize aqueous slkali as containing hydrazine or tetraethylammonium hydroxide ((CH 3) 4The wet etching of aqueous solution NOH).At this moment, can prevent that crystalline semiconductor 311 is etched with oxide film 312.
Then, remove oxide film 312 with fluoric acid.Then, crystalline semiconductor 311 is carried out pattern form, to form semiconductor layer 314-317 (Fig. 8 D).Afterwards, form the gate insulating film 308 that covers semiconductor layer 314 to 317.For example can form the siliceous dielectric film of thick 30-200nm as gate insulating film 308 with sputtering method.
In addition, the gettering process among the present invention is not subjected to the restriction of the method that illustrates in the present embodiment.As long as can reduce the catalytic elements in the semiconductor film, also can use other method.
Then, on gate insulating film 308 be selected from the element of Ta, W, Ti, Mo, Al, Cu, Cr, Nd or comprise above-mentioned element as the alloy material or the compound-material of principal ingredient, what be doped with impurity element such as phosphorus is the well-known materials that electric conductivity is arranged such as typical semiconductor film or AgPdCu alloy with polysilicon film, forms first conducting film 320 (Fig. 9 A) of thick 20-100nm.Then, the lamination of the silicon nitride film of second conducting film of the thick 100-400nm of formation covering first conducting film 320 and thick 100-400nm.Then, the dielectric film to silicon oxide film or silicon nitride film etc. carries out pattern processing earlier, to form insulation course 329-332.More particularly, if silicon oxide film, then the corrosive liquid with phosphate carries out pattern processing, if silicon nitride film, then the corrosive liquid with the fluoric acid base carries out pattern processing.Then, as mask, second conducting film is carried out pattern processing with insulation course 329-332, thereby form conductive layer 325-328.
Then, carry out doping treatment.This doping treatment is to belong to 15 families with low concentration doping phosphorus or arsenic etc. in semiconductor layer 304 to 307, and gives the impurity of N type.When mixing, conductive layer 325-328 and insulation course 329-332 become with respect to the mask of giving N type impurity, and self-alignment ground forms impurity range 321-324, is doped with 1 * 10 in this impurity range 18Atoms/cm 3To 1 * 10 20Atoms/cm 3The impurity element of giving the N type of concentration range.
Then, carry out anisotropic side wall etching, conductive layer 325-328 is retreated, thereby form conductive layer 335-338 (Fig. 9 B).Afterwards, will get rid of (Fig. 9 C) as the insulation course 329-332 that mask plays a role by etching.Then, the mask 346,347 that new formation is made of etchant resist, and use the accelerating potential higher to carry out doping treatment than above-mentioned doping process.As the mask with respect to impurity element, the result who mixes is to have mixed 1 * 10 in the impurity range (N-zone, LDD zone) 341,344 with conductive layer 335,337 18Atoms/cm 3To 5 * 10 19Atoms/cm 3The impurity element of giving the N type of concentration range, and mixed 1 * 10 in the impurity range (N+ zone) 340,343 19Atoms/cm 3To 5 * 10 21Atoms/cm 3The impurity element of giving the N type of concentration range.In addition, channel formation region 342,345 is formed.
Afterwards, get rid of the mask 346,347 that constitutes by etchant resist, the new mask 356,357 (Fig. 9 D) that constitutes by etchant resist that forms.Afterwards, carry out doping treatment, form impurity range, be doped with the impurity element of giving with the above-mentioned first conductivity type opposite conductivity type in this impurity range at semiconductor layer as the active coating of P channel-type TFT.In this step,, mix and give the p type impurity element as the mask at impurity element with conductive layer 336,338, the result is that the oneself adjusts ground and forms impurity range (P+ zone) 350,353; Impurity range (P-zone) 351,354 and channel formation region 352,355 are formed.At this, with 1 * 10 19Atoms/cm 3To 5 * 10 21Atoms/cm 3Doped in concentrations profiled give the impurity element of P type.Notice that doping condition is not subjected to above-mentioned restriction, also can carry out above repeatedly doping treatment twice.
Then, get rid of the mask 356,357 that constitutes by etchant resist, as mask, first conducting film 320 is carried out anisotropic etching, form conductive layer 360-363 (Fig. 9 E) with conductive layer 325-328.By above-mentioned steps, can on same substrate, form N channel transistor 380,382 and P channel transistor 381,383.
Then, form dielectric film 372 as diaphragm.Use plasma CVD method or sputtering method, the siliceous dielectric film that forms thick 100-200nm with individual layer or rhythmo structure is as this dielectric film 372.In the present embodiment, form the oxygen silicon nitride membrane of thick 100nm with plasma CVD method.Carry out heat treated then,, or activate the impurity element that is entrained in the semiconductor layer with recovery semiconductor layer crystallinity.
On dielectric film 372, form organic insulating film 373 then.Organic insulating film 373 uses by organic insulating films such as the coated silicon oxide film of SOG method, polyimide, polyamide, acryl resins.Organic insulating film 373 relax by the TFT that on substrate 300, forms cause rough and uneven in surface, it is big as smooth effect, so organic insulating film 373 preferred uses have the films of planarization.
Then, use photoetch method, dielectric film 372 and organic insulating film 373 are carried out pattern processing, to form the contact hole that arrives impurity range 340,343,350 and 353.Then, form conducting film, this conducting film is carried out pattern processing, thereby form wiring 364-371 with conductive material.Afterwards, form dielectric film 374, just finished liquid crystal display device as shown in the figure as diaphragm.
Be used for the preferred LDD structure of transistor or the GOLD structure of functional circuits such as driving circuit or CPU,, it is desirable to, realize transistorized miniaturization in order to realize high speed.The transistor 380-383 that finishes according to present embodiment, owing to be the LDD structure, so needing to be suitable for the driving circuit of high speed operation.In addition; be accompanied by miniaturization; the filming of gate insulating film 308 becomes integral factor; in the technology of present embodiment; doping process is to carry out under the state that gate insulating film 308 is covered by first conducting film; because this gate insulating film 308 is protected, so concerning realizing miniaturization, we can say that this method is effective method for making.
Present embodiment can any and above-mentioned embodiment mode combinations and is implemented.
Embodiment 2
Present embodiment is put up with the formation method that forms thrust (bump) in the input and output terminal of driver IC and is illustrated.Thrust is in order to provide with COG mode mounting driver IC.This thrust can form with the method for knowing, and hereinafter will one of them example be described with reference to Figure 10.
Form barrier metal layer (barrier metal layer) 605 (Figure 10 A) on the input and output terminal 603 in the identical layer that is formed at source or leak routing, this barrier metal layer is stacked Ti and Pd or Cr and Cu and form.Sputtering method or evaporation deposition method etc. are fit to be used for forming this barrier metal layer 605.Then, form etchant resist mask 606.
Then, form the thrust 607 (Figure 10 B) of thick 5-20 μ m by plating with Au.Afterwards, remove etchant resist mask 606 not, on thrust 607, apply etchant resist again to form the etchant resist mask 608 (Figure 10 C) that barrier metal layer execution etching is formed.
For the photoengraving technology that forms etchant resist mask 608 is carried out owing to clipping thrust, so can not obtain high-resolution.Therefore, etchant resist mask 608 covers thrusts and periphery thereof and forms.If utilize this etchant resist mask 608 to carry out the etching of barrier metal layer, then form barrier metal layer 609 (Figure 10 D).Afterwards, carry out 200-300 ℃ heat treated to improve the connecting airtight property between thrust and the barrier metal layer.By above-mentioned steps, can finish the driver IC that in input and output terminal, is formed with thrust.
Present embodiment can any and above-mentioned embodiment pattern, embodiment makes up enforcement.
Embodiment 3
Present embodiment will provide the explanation of the installation method of driver IC with reference to figure 11A-11E, 18.As installation method, can adopt the method for attachment of using anisotropic conductive material or electric wire in conjunction with (wire bonding) mode etc., hereinafter will one of them example be described with Figure 11 A-11E.
The example (Figure 11 A) that passes through anisotropic conductive material mounting driver IC 208 on first substrate 201 below will be described.Pixel region 202, extension line 206, connecting wiring and input and output terminal 207 are provided on first substrate 201.Second substrate 203 and first substrate 201 link together by encapsulant 204, clip liquid crystal layer 205 between the two.
By anisotropic conductive material, FPC 212 is connected a side's of connecting wiring and input and output terminal 207 edge.Anisotropic conductive material is coated with the Au that crosses etc. by resin 215 and surface diameter is that the conductive particle 214 of tens to hundreds of μ m constitutes, by this conductive particle 214, connecting wiring and input and output terminal 207 are electrically connected with the wiring 213 that is formed on FPC 212.Driver IC 208 also is connected with first substrate 201 by anisotropic conductive material, and, be provided at input and output terminal 209 in the driver IC 208 and extension line 206 or connecting line and input and output terminal 207 and be electrically connected by being blended in the conductive particle 210 in the resin 211.
Installation method about the driver IC 208 that uses this mode will award explanation with reference to figure 11C.Provide input and output terminal 225 in the driver IC 224, around this terminal, be formed with protection dielectric film 226.As shown in the figure, on first substrate 220, form first conductive layer 221, second conductive layer 223 and insulation course 222,, form extension line or connecting wiring with first conductive layer 221 and second conductive layer 223 at this.
These conductive layers that form on first substrate 220 and the pixel TFT of insulation course and pixel region form in same technology.For example, when forming pixel TFT with the wrong arrange type of reciprocal cross, first conductive layer 221 and gate electrode form with materials such as Ta, Cr, Ti, Al in same layer.Usually form gate insulating film on the gate electrode, and the identical therewith layer of insulation course 222 usefulness forms.Overlapping second conductive layer 223 that provides and pixel electrode form with same nesa coating on first conductive layer 221, and make itself and conductive particle form excellent contact.By will size, the density of the conductive particle 227 of mixing being set at suitable value in the resin 228, can the driver IC and first substrate 220 be electrically connected with above-mentioned pattern.
Secondly, Figure 11 D shows the example of the COG mode of the convergent force that utilizes resin.Form the restraining barrier 229 that Ta or Ti etc. form in driver IC 224 sides, on this restraining barrier, cross method etc. forms about 20 μ m with Au thrust 230 then by chemistry.Then, clamping light rigid insulation film 231 between the driver IC and first substrate 220, thus utilize the convergent force of the resin that solidifies because of photo-hardening to compress realization electrical connection between the electrode.
Secondly, Figure 11 E shows therebetween conductive particle 214 the wiring 213 on the FPC 212 and the example of driver IC 208 is provided, and this structure is when being used for the confined electronic apparatus of body volume such as portable terminal device, and is extremely effective.
In addition, Figure 11 B shows on first substrate 201 with bonding agent 216 fixed drive IC208, and the situation during with the input and output terminal of Au electric wire 217 connection driver ICs 208 and extension line or connecting wiring.Seal with sealing resin 218 at this.In addition, the installation method of driver IC 208 has no particular limits, and can use COG mode or the electric wire combined techniques known, perhaps the TAB method.
Form the same thickly with second substrate that is formed with reverse electrode by the thickness with driver IC, height between the two becomes basic identical, like this, just light and handyization that realizes display device integral body is contributed to some extent.In addition,,, can not produce thermal stress yet, consequently can not damage the characteristic of the circuit of making by TFT even the liquid crystal display device occurrence temperature changes with same nature material substrate separately.Also having of other as shown in this embodiment, installed driving circuit by using the driver IC longer than IC chip length, with respect to a pixel region, can reduce the quantity of the driver IC of installation.
Notice that driver IC 208 is to be formed by the element group that the film that is equivalent to driving circuit on substrates such as glass or quartz constitutes.Wherein, not necessarily must use described substrate, also can peel off to remove and remove this substrate.Below such method will be described simply.
First method at first is described, on the substrate that constitutes with quartz or glass, forms element group and the input and output terminal that constitutes by film.In this case, between element group and substrate, provide bonding agent.Then, after being electrically connected driver IC and extension line, on substrate, paste double sticky tape with thrust, and with at the bottom of the physics mode peeling liner.
Next illustrates second method, forms element group and the input and output terminal that is made of film on first substrate that constitutes with quartz or glass.On this element group, form dielectric film, on this dielectric film, form bonding agent then, on this bonding agent, paste double sticky tape then, on this double sticky tape, paste second substrate then.Afterwards, peel off first substrate, expose the counterdie that is formed on below the element group.Then, on the counterdie that exposes, form bonding agent, paste this bonding agent and thrust and lead-out wiring and connecting wiring then.At last, peel off second substrate.
As previously discussed, driver IC not necessarily must be made on substrate, also can peeling liner at the bottom of, electrical connecting element group only.Such driver IC is also referred to as sticking brilliant (stick crystal).Figure 18 shows the cross-sectional view of this situation, if peel off the substrate that constitutes driver IC like this, then can realize light and handyization, and is when this driver IC is carried portable terminal device, especially effective.
Present embodiment can any and above-mentioned embodiment pattern, embodiment makes up enforcement.
Embodiment 4
Present embodiment will illustrate the structure of driver IC with figure.
As mentioned above, driver IC is utilized as the driving circuit of liquid crystal display device.Figure 12 shows the block scheme of display device in this case.Pixel region 1601 is formed by a plurality of sweep traces and data line, and pixel region 1601 can provide the active matrix type of TFT, also can be passive matrix type.The periphery of pixel region 1601 provides scan line drive circuit 1602 and the data line drive circuit 1603 that is equivalent to driver IC.
The clock of importing into from the external world, enabling pulse 1607 and picture signal 1608 are imported into the input specification of controller circuitry 1605 with conversion driver IC, are converted into separately timing specification at controller circuitry.In addition, power supply 1609, the power circuit that is made of operational amplifier 1606 are provided by external circuit.Above-mentioned controller circuitry 1605 and power circuit 1606 are as installing with the TAB mode, and be then effective to light and handyization that realizes display device.
Though controller circuitry 1605 is to sweep trace and data line difference output signal, signal segmentation circuit (signal dividing circuit) 1604 is divided into m back with supplied with digital signal and supplies with data line.Cut apart several m and be 2 or more natural number, it is suitable in fact being divided into 2-16.In this situation, the number of supplied with digital signal line 1610 is different with the number of repairing digital signal line 1620.Signal segmentation circuit 1604 can be made of the IC chip, also can be made of driver IC.
The circuit structure of driver IC is different with the data line side in scan line side.Figure 12 B shows one of them example.Scan line drive circuit 1602 is made of shift register circuit 123, level shifter 124 and buffer circuit 125.On the other hand, data line drive circuit 1603 is made of shift register circuit 126, latch cicuit 127, level shifter 128 and D/A change-over circuit 129.
In addition, Figure 13 shows with above-mentioned different, and an example of driver IC is provided in the data line side.Its circuit structure is: constitute from shift register circuit 1801, latch cicuit 1804,1805, level shifter 1806 and the D/A change-over circuit 1807 of input side.
Present embodiment can any and above-mentioned embodiment pattern, embodiment makes up enforcement.
Embodiment 5
Present embodiment is provided at explanation the structure of the pixel region on the substrate of mounting driver IC.More particularly, the situation that explanation is comprised liquid crystal material between pair of electrodes.
Figure 14 A is the vertical view (mask design figure) that comprises the pixel region of liquid crystal layer.Sweep trace 651 and data line 655 intersect, and pixel TFT 658 is formed on this point of crossing.Pixel TFT 658 is bottom gate types, a side of source/drain electrode 656 and data line 655, and the opposing party is connected with pixel electrode 657.Drive the dielectric film that required holding capacitor 659 therebetween of liquid crystal are used and the gate insulating film identical layer forms and be formed between capacitance wiring 653 and the pixel electrode 657, wherein, capacitance wiring 653 usefulness form with gate electrode 652 identical layers.The equivalent electrical circuit of Figure 14 B remarked pixel part.
The structure of pixel TFT does not have particular restriction, for example, can form with the bottom gate type TFT of the channel-etch type shown in Figure 15 A.Specifically, on substrate 660, form the gate electrode 661 that constitutes by Ta, Cr, Mo, Al etc.Afterwards, form gate insulating film 662 with silicon nitride film, silicon oxide film or oxidation titanium film etc.Then, form the semiconductor layer that non crystalline structure is arranged 663 of island shape (island-like) thereon, and make the part of this semiconductor layer and gate electrode 661 overlapping.It is amorphous silicon that the typical material of the semiconductor layer 663 of non crystalline structure is arranged, and forms the semiconductor layer 663 of thick 100-250nm with plasma CVD method.The semiconductor layer 664 of n type or p type impurity that mixed is provided, and makes it and have the semiconductor layer 663 of non crystalline structure overlapping.
Afterwards, form pixel electrode 665 with nesa coating.Nesa coating uses indium oxide/tin (In 2O 3: SnO 2, ITO) or the compound of zinc paste (ZnO), indium oxide/tin and zinc paste, gallium oxide (Ga has mixed 2O 3) zinc paste etc.Use formation source/drain electrodes 666 such as Cr, Ti, Ta then.As mask the semiconductor layer 664 of mixed n type or p type impurity is carried out etching with this source/drain electrode 666, to be divided into two zones.This etch processes is owing to can not select processing to there being non crystalline structure semiconductor layer 663 to carry out, and the part of non crystalline structure semiconductor layer 663 is also etched to be disposed so have.At last, form diaphragms 667 such as silicon nitride or monox, just finished pixel TFT.
Figure 15 B shows the structure of channel protection film type.This structure provides the channel protective layer 669 with formation such as silicon nitrides on the semiconductor layer 668 that non crystalline structure is arranged, such structure can make the semiconductor layer 668 of non crystalline structure not etched when carrying out the etching and processing of formation source/drain region.
Figure 15 C represents a kind of structure, and this structure forms the flatted membrane 671 that forms with organic resin materials such as acrylic acid on diaphragm 670, and forms pixel electrode 672 on flatted membrane 671.By connect the structure of pixel electrode and pixel TFT with contact hole, can improve aperture opening ratio, and, can reduce the confusion of the liquid crystal aligning of disclination (disclination) etc. by flat surface.
At this,, be to use top gate type TFT also without any problem though show the example as pixel TFT with bottom gate type TFT.Though from the characteristic of TFT and the viewpoint of manufacturing cost, the situation of the TFT of use bottom gate type is more, driver IC of the present invention also can be applied to the mim type element that forms with making up titanium and titanium dioxide and form pixel region.
Above-mentioned Figure 14 A and 14B show the situation that the semiconductor element that constitutes pixel region forms with amorphous semiconductor, but also can use the semiconductor element that is formed by organic semiconductor.The situation that forms semiconductor element with organic semiconductor hereinafter will be described.
The semiconductor element that is formed by organic semiconductor has three types: a kind of is by the planar structure (planer structure) (Figure 16 A) of the sequential cascade of gate electrode 401, gate insulating film 402, source/drain electrode 403 and organic semiconductor 404 on substrate 400; A kind of is by the wrong arrangement architecture (inverse staggered structure) (Figure 16 B) of the reciprocal cross of the sequential cascade of gate electrode 401, gate insulating film 402, organic semiconductor 404 and source/drain electrode 403 on substrate 400; A kind of is by the staggered structure (staggered structure) (Figure 16 C) of the sequential cascade of source/drain electrode 403, organic semiconductor 404, gate insulating film 402 and gate electrode 401 on substrate 400.Pixel region can use the thin film transistor (TFT) of any type.But, the gate insulating film 402 preferred Ta that use high dielectric materials of the semiconductor element (organic transistor) that forms by above-mentioned organic semiconductor 2O 5This is because Ta 2O 5Dielectric constant be about 24, than high about 6 times of normally used monox.If the specific inductive capacity height, then sensed electric charge is many in the channel layer, so conducting electric current (on state current) will increase.In addition, to be used in channel layer more suitable for material pentacene (pentacene) that carrier mobility is high.How high the mobility increase is, and how high the conducting electric current also can be enhanced.
Then, use the cross-sectional structure of the liquid crystal display device of organic transistor with reference to figure 16D explanation.Stack gradually in order on the substrate 410 and form gate electrode 423,412; Gate insulating film 413,417; Pentacene layer 414 about thick 100nm; Al layer 415,416 about thick 2-3nm; Polyvinyl alcohol (PVA) 419; Ultraviolet curable resin 420, and on substrate 411, form ITO film 422.Then, the substrate 410 and the substrate 411 that will be formed with above-mentioned film are bonding, and inject liquid crystal layer 421 between two substrates, have so just finished liquid crystal display device.
Present embodiment can any and above-mentioned embodiment pattern, embodiment makes up enforcement.
Embodiment 6
Present embodiment will will have been installed the method that the display device of driver IC carries electronic apparatus with reference to Figure 17 explanation.
Among Figure 17, display device is at the edge mounting driver IC 710 of the substrate 701 that pixel region 702 is installed.And, use to comprise the encapsulant 707 bonding counter substrate 703 of separation material (spacer) 706, and polaroid 708,709 be provided.Use bonding agent 723 fixed frames 724 at last.
Driver IC 710 in its input and output terminal 711, by the resin 713 that contains conductive particle 712, with realize and be formed on substrate 701 on being connected of input and output wiring 705,714.Flexible print circuit board 717 (FPC 717) by containing conductive particle 715 resin 716 and a side's of input and output wiring 714 edge link together.Input and output wiring 720 on FPC 717 and the printed substrates 719 that provides signal processing circuit, amplifying circuit and power circuit etc. (resin 722 that contains conductive particle 721) also in a like fashion is connected, and image is shown that needed signal sends the display device that driver IC is installed to.And display device is if transmission-type liquid crystal display device then provides light source and optical conductor in counter substrate 703 1 sides, and bias light 718.
The installation method of display device described here is one of them example, is that the pattern according to electronic equipment suitably combines.The electronic apparatus of using the present invention and making can be enumerated following example: the audio frequency playback equipment of video camera, digital camera, safety goggles formula display etc.; The image playing apparatus of the outfit recording medium of notebook computer, game machine, portable data assistance (portable computer, mobile phone etc.), home-use game machine etc. etc.The object lesson of these electronic apparatus is represented in Figure 19 A-19C, 20A-20D.
Figure 19 A represents large scale (about 40 inches) LCD TV, comprises display part 2001, shell 2002 and audio frequency output 2003 etc.Figure 19 B represents LCD, comprises shell 2011, audio frequency output 2012 and display part 2013 etc.Figure 19 C represents Foldable portable terminal, comprises first display screen 2021, action button 2022, second display screen 2023, action button 2024, shell 2025 and camera lens 2026 etc.The present invention is applicable to the making of display part 2001,2013 in the above-mentioned electronic apparatus, first display screen 2021, second display screen 2023.
Figure 20 A represents personal digital assistant PDA (personal digital assistant), comprises external interface 2031, stylus (stylus) 2033, display part 2034 and action button 2035 etc.Figure 20 B represents portable game machine, comprises display part 2041 and action button 2043,2044 etc.Figure 20 C represents Digital Video, comprises eyepiece 2051, operating switch 2052, display part 2056, display part 2053 and battery 2055 etc.Figure 20 D represents notebook PC, comprises shell 2061, display part 2062 and keyboard 2064.The present invention is applicable to the making of the display part 2034,2041,2053,2056,2062 in the above-mentioned electronic apparatus.
Present embodiment can any and above-mentioned embodiment pattern, embodiment makes up enforcement.
Embodiment 7
The type of drive of display device when showing the image of many classifications comprises analog-driven and digital drive.The difference of this dual mode is the method for this light-emitting component of control in luminous, the non-luminous state separately of display element.The former analog-driven shows classification by the electric current that control flow to display element.And the latter's digital drive only shows classification by the conducting state (brightness is 100% state substantially) of display element and two states of cut-off state (brightness is 0% state substantially).Digital drive is as only using conducting and by two states, then can only show 2 classifications, so the driving method that makes up with other mode and show many classifications image is arranged again, comprises for example area classification (area gray scale) mode, the temporal scalability mode.
Display device of the present invention is no matter be liquid crystal panel (liquid crystal panel) or luminescent panel (light emitting panel), is applicable to any in analog-driven and the digital drive.In addition, in digital drive, display device of the present invention is applicable to any in area hierarchical approaches or the temporal scalability mode.In addition, display device of the present invention also is applicable to other modes such as over drive (OD) mode that the liquid crystal answer speed has been enhanced.
In addition, as mentioned above, display device of the present invention can be that the active matrix type also can be a passive matrix type.But when active matrix-type is applied to luminescent panel, because light-emitting component is the current drive-type element, after a little while inhomogeneous between the transistor in the pixel, analog-driven is suitable.In addition, even digital drive also can be by making the transistor that drives usefulness in saturation region operation, supply with light-emitting component and be suitable for certain magnitude of current.In a word, so long as use the current drive-type element, preferred use can be supplied the dot structure of certain magnitude of current, and uses corresponding only driving method.
Present embodiment is with the temporal scalability mode in the above-mentioned type of drive of simple declaration.Be used in such as the frame rate in the display device of liquid crystal display and light-emitting device etc. usually at the order of magnitude of 60Hz.That is, screen drawing carries out with the order of magnitude of per second 60 times, might show like this and human eye does not think screen flicker.In this situation, the cycle of carrying out a screen drawing is called a frame period here.And a frame period is divided into a plurality of period of sub-frame in the temporal scalability mode.It is more that this number of cutting apart equals the situation of number of hierarchy bit, because of for simplicity, illustrates that the number of cutting apart equals the situation of the number of hierarchy bit at this.Because use 3 classifications,, a frame period is divided into the situation of three period of sub-frame SF1-SF3 here so being described.
In addition, each period of sub-frame has addressing (a writing) period T a and lasting (luminous) period T s.Addressing (writing) cycle is the cycle that is used for writing to pixel data image signal, and each period of sub-frame has identical length.The lasting cycle be wherein light-emitting component based on the luminous cycle of data image signal of writing in the cycle in addressing (writing) in the pixel.Continuing (luminous) period T s1-Ts3 has and satisfies Ts1: Ts2: Ts3=4: 2: 1 length ratio.In other words, represent that lasting (luminous) cycle of n has 2 for the classification of n position N-1: 2 N-2: ..: 2 1: 2 0The length ratio.The light period length of each pixel concrete (luminous) cycle that continues decision in cycle luminous in a pixel period by light-emitting component.Carrying out classification like this represents.
In other words, by taking luminance or non-luminance, and utilize the length of total fluorescent lifetime, can represent to have 8 classifications of 0%, 14%, 28%, 43%, 57%, 71%, 86% and 100% brightness for lasting (luminous) period T s1-Ts3.If have luminous in Ts1 and do not have luminously in Ts2 and Ts3, brightness is 57%, when brightness is 71%, among luminous Ts1 of occurring in and the Ts3 and do not occur among the Ts2.Just in using the situation of time stage method, same classification is represented with 71% of total fluorescent lifetime long the luminous of time.
When increasing the number that shows classification in this way, can increase the number of period of sub-frame.In addition, always must not occur from upper to the minimum bit order for period of sub-frame, period of sub-frame can be arranged arbitrarily in the frame period.In addition, order also can change in each frame period.
Present embodiment can any and above-mentioned embodiment pattern, embodiment makes up enforcement.
Embodiment 8
Illustrated in the above-mentioned embodiment mode 3 that use continuous oscillation laser instrument carries out the situation of laser crystallization, but the present invention is not limited only to the continuous oscillation laser instrument, the present invention can also use pulsed laser to carry out laser crystallization.Even this is because the energy bundle (pulsed beams) of pulse output, semiconductor solidifies from being melted to according to laser beam, as long as vibrate the laser of the oscillation frequency that can shine the next pulse laser beam, just can obtain the crystallization crystal grain of on the direction of scanning, growing up continuously.Pulsed laser that is to say, even also can obtain effect identical when using the continuous oscillation laser instrument.
So, use the pulsed beams stipulated the oscillation frequency least limit so that the period ratio of impulse hunting begins also will lack to the time of solidifying fully from the semiconductor film fusing.Specifically, the oscillation frequency of pulsed laser is 10MHz or more, and preferred 60-100MHz uses the obviously high a lot of frequency band of the frequency band (frequencyband) that likens the tens Hz-hundreds of Hz that use for the oscillation frequency of general pulsed laser to.
If use above-mentioned frequency band, then can rely on laser beam from being melted to the irradiation of carrying out next pulse laser in the time of solidifying at semiconductor film.So, the situation difference during with the laser of the impulse hunting of using conventional frequency band, because the solid-liquid interface in can continuous mobile semiconductor film, so can be formed on the semiconductor film that continuous one-tenth germination is arranged on the direction of scanning.More particularly, the fabric width that can be formed on the direction of scanning is about 10-30 μ m, being the aggregation of the crystal grain about 1-5 μ m perpendicular to the fabric width on the direction of scanning, just can obtain the crystallization crystal grain with continuous oscillation laser instrument same degree.And, by forming the single grain of extending, can form the semiconductor film that on the channel direction of TFT, does not almost have grain boundary at least along the direction of scanning.
As pulsed laser, can use Ar laser instrument, Kr laser instrument, excimer laser, the CO that can vibrate with said frequencies 2Laser instrument, YAG laser instrument, Y 2O 3Laser instrument, YVO 4Laser instrument, YLF Lasers device, YAlO 3Laser instrument, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper-vapor laser or golden vapor laser.
The present invention with said structure, the thin film integrated circuit of the characteristic good that use forms by the laser launched from the continuous oscillation laser instrument of irradiation, then can provide a kind of liquid crystal display device that driver IC that can high speed operation is installed with and preparation method thereof.In addition, by the fabric width of the laser beam of laser instrument and the bond length of driver IC are set at identical value, can provide liquid crystal display device that productivity has been enhanced with and preparation method thereof, and, owing to can on the large-sized substrate of rectangle, make a plurality of driver ICs, thus can provide cheaply liquid crystal display device with and preparation method thereof.And, according to the present invention, come mounting driver IC by adopting the COG mode, can provide the liquid crystal display device of having realized small size, minimal thickness, light weight and narrow frame with and preparation method thereof.

Claims (34)

1. liquid crystal display device comprises:
Have transistorized first substrate of the first film, described the first film transistor comprises that amorphous semiconductor or organic semiconductor are used for channel part, and intersects mutually and accompany therebetween in the zone of insulation course at sweep trace and data line;
Second substrate with reverse electrode;
Be provided at the liquid crystal layer between described first substrate and second substrate; And
Have and comprise that crystalline semiconductor is used for the 3rd substrate of second thin film transistor (TFT) of channel part,
Wherein said crystalline semiconductor comprises along the grain boundary of the mobile extension in electronics in described second thin film transistor (TFT) or hole;
Wherein said first substrate and described second substrate are bonded to each other in the mode that described first substrate is exposed;
Exposed region on wherein said the 3rd substrate and described first substrate is bonding;
Wherein forming the first area of described second thin film transistor (TFT) and the second area of formation input terminal and lead-out terminal is formed on described the 3rd substrate; And
The bond length of wherein said the 3rd substrate is in the scope of 1～6mm, and the bond length of described first area is in the scope of 0.5～1mm.
2. according to the liquid crystal display device of claim 1, the long limit of wherein said the 3rd substrate is identical with the length on minor face that is arranged with the transistorized pixel region of described the first film or long limit.
3. according to the liquid crystal display device of claim 1, wherein said first substrate to the, three substrates are manufactured from the same material.
4. according to the liquid crystal display device of claim 1, wherein said first substrate to the, three substrates are by glass or quartzy making.
5. according to the liquid crystal display device of claim 1, wherein said crystalline semiconductor forms by irradiating laser, and the oscillator that is used to produce described laser is YAG laser instrument, the YVO that is selected from continuous wave 4Laser instrument, YLF Lasers device, YAlO 3Laser instrument, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, Nd 3+: Y 2O 5At least a laser instrument in laser instrument, excimer laser, Ar laser instrument and the Kr laser instrument.
6. according to the liquid crystal display device of claim 1, wherein said the first film transistor is that bottom gate thin film transistor and described second thin film transistor (TFT) are top-gate thin-film transistors.
7. according to the liquid crystal display device of claim 1,
Wherein said input terminal is first input end, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first input end and second input terminal adjacent with first input end and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical.
8. according to the liquid crystal display device of claim 1,
Wherein said input terminal is first input end, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first input end and second input terminal adjacent with first input end and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical, and first input end is sub and second input terminal between described spacing be 30～150 μ m.
9. according to the liquid crystal display device of claim 1,
Wherein said lead-out terminal is first lead-out terminal, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first lead-out terminal and second lead-out terminal adjacent with first lead-out terminal and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical.
10. according to the liquid crystal display device of claim 1,
Wherein said lead-out terminal is first lead-out terminal, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first lead-out terminal and second lead-out terminal adjacent with first lead-out terminal and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical, and the described spacing between first lead-out terminal and second lead-out terminal is 30～150 μ m.
11. an electronic apparatus that has according to the liquid crystal display device of claim 1, wherein said electronic apparatus are to select from the group that comprises LCD TV, LCD monitor, phone, personal digital assistant, game machine, Digital Video and personal computer.
12. the method for making of a liquid crystal display device may further comprise the steps:
On first substrate, form and comprise that amorphous semiconductor or organic semiconductor are used for the first film transistor of channel part;
The mode that accompanies liquid crystal layer with the centre is bonding with second substrate with reverse electrode with described first substrate;
On the 3rd substrate, form crystalline semiconductor by the irradiation continuous wave laser;
Formation has second thin film transistor (TFT) that described crystalline semiconductor is used for channel part, cuts apart described the 3rd substrate thereafter to form a plurality of driver ICs; And
Described driver IC is pasted exposed region on described first substrate.
13. according to the method for making of the liquid crystal display device of claim 12, the bond length of wherein said laser focus point width and described driver IC is identical.
14. according to the method for making of the liquid crystal display device of claim 12, wherein said crystalline semiconductor is selected from YAG laser instrument, the YVO of continuous wave by use 4Laser instrument, YLF Lasers device, YAlO 3Laser instrument, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, Nd 3+: Y 2O 5At least a laser instrument in laser instrument, excimer laser, Ar laser instrument and the Kr laser instrument forms.
15. a semiconductor devices comprises:
Have transistorized first substrate of the first film, described the first film transistor comprises that amorphous semiconductor is used for channel part, and intersects mutually and accompany therebetween in the zone of insulation course at sweep trace and data line;
Second substrate with reverse electroplax; And
Have and comprise that crystalline semiconductor is used for the 3rd substrate of second thin film transistor (TFT) of channel part,
Wherein said crystalline semiconductor comprises along the grain boundary of the mobile extension in electronics in described second thin film transistor (TFT) or hole;
Wherein said first substrate and described second substrate are bonded to each other in the mode that described first substrate is exposed;
Exposed region on wherein said the 3rd substrate and described first substrate is bonding;
Wherein forming the first area of described second thin film transistor (TFT) and the second area of formation input terminal and lead-out terminal is formed on described the 3rd substrate; And
The bond length of wherein said the 3rd substrate is in the scope of 1～6mm, and the bond length of described first area is in the scope of 0.5～1mm.
16. according to the semiconductor devices of claim 15, the long limit of wherein said the 3rd substrate is identical with the length on minor face that is arranged with the transistorized pixel region of described the first film or long limit.
17. according to the semiconductor devices of claim 15, wherein said first substrate to the, three substrates are manufactured from the same material.
18. according to the semiconductor devices of claim 15, wherein said first substrate to the, three substrates are by glass or quartzy making.
19. according to the semiconductor devices of claim 15, wherein said crystalline semiconductor forms by irradiating laser, and the oscillator that is used to produce described laser is YAG laser instrument, the YVO that is selected from continuous wave 4Laser instrument, YLF Lasers device, YAlO 3Laser instrument, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, Nd 3+: Y 2O 5At least a laser instrument in laser instrument, excimer laser, Ar laser instrument and the Kr laser instrument.
20. according to the semiconductor devices of claim 15, wherein said the first film transistor is that bottom gate thin film transistor and described second thin film transistor (TFT) are top-gate thin-film transistors.
21. according to the semiconductor devices of claim 15,
So wherein said input end first input end, described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first input end and second input terminal adjacent with first input end and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical.
22. according to the semiconductor devices of claim 15,
Wherein said input terminal is first input end, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first input end and second input terminal adjacent with first input end and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical, and first input end is sub and second input terminal between described spacing be 30～150 μ m.
23. according to the semiconductor devices of claim 15,
Wherein said lead-out terminal is first lead-out terminal, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first lead-out terminal and second lead-out terminal adjacent with first lead-out terminal and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical.
24. according to the semiconductor devices of claim 15,
Wherein said lead-out terminal is first lead-out terminal, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first lead-out terminal and second lead-out terminal adjacent with first lead-out terminal and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical, and the described spacing between first lead-out terminal and second lead-out terminal is 30～150 μ m.
25. a semiconductor devices comprises:
Have transistorized first substrate of the first film, described the first film transistor comprises that organic semiconductor is used for channel part, and intersects mutually and accompany therebetween in the zone of insulation course at sweep trace and data line;
Second substrate with reverse electrode; And
Have and comprise that crystalline semiconductor is used for the 3rd substrate of second thin film transistor (TFT) of channel part,
Wherein said crystalline semiconductor comprises along the grain boundary of the mobile extension in electronics in described second thin film transistor (TFT) or hole;
Exposed region on wherein said the 3rd substrate and described first substrate is bonding;
Wherein forming the first area of described second thin film transistor (TFT) and the second area of formation input terminal and lead-out terminal is formed on described the 3rd substrate; And
The bond length of wherein said the 3rd substrate is in the scope of 1～6mm, and the bond length of described first area is in the scope of 0.5～1mm.
26. according to the semiconductor devices of claim 25, the long limit of wherein said the 3rd substrate is identical with the length on minor face that is arranged with the transistorized pixel region of described the first film or long limit.
27. according to the semiconductor devices of claim 25, wherein said first substrate to the, three substrates are manufactured from the same material.
28. according to the semiconductor devices of claim 25, wherein said first substrate to the, three substrates are by glass or quartzy making.
29. according to the semiconductor devices of claim 25, wherein said crystalline semiconductor forms by irradiating laser, and the oscillator that is used to produce described laser is YAG laser instrument, the YVO that is selected from continuous wave 4Laser instrument, YLF Lasers device, YAlO 3Laser instrument, amorphous laser, ruby laser, alexandrite laser, Ti: sapphire laser, Nd 3+: Y 2O 5At least a laser instrument in laser instrument, excimer laser, Ar laser instrument and the Kr laser instrument.
30. according to the semiconductor devices of claim 25, wherein said the first film transistor is that bottom gate thin film transistor and described second thin film transistor (TFT) are top-gate thin-film transistors.
31. according to the semiconductor devices of claim 25,
Wherein said input terminal is first input end, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first input end and second input terminal adjacent with first input end and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical.
32. according to the semiconductor devices of claim 25,
Wherein said input terminal is first input end, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first input end and second input terminal adjacent with first input end and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical, and first input end is sub and second input terminal between described spacing be 30～150 μ m.
33. according to the semiconductor devices of claim 25,
Wherein said lead-out terminal is first lead-out terminal, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first lead-out terminal and second lead-out terminal adjacent with first lead-out terminal and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical.
34. according to the semiconductor devices of claim 25,
Wherein said lead-out terminal is first lead-out terminal, and described sweep trace is first sweep trace, and described data line is first data line, and
Wherein the spacing between the spacing between the spacing between first lead-out terminal and second lead-out terminal adjacent with first lead-out terminal and first sweep trace and second sweep trace adjacent with first sweep trace or first data line and second data line adjacent with first data line is identical, and the described spacing between first lead-out terminal and second lead-out terminal is 30～150 μ m.
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