CN100446234C - Method of fabricating lead frame and method of fabricating semiconductor device using the same - Google Patents
Method of fabricating lead frame and method of fabricating semiconductor device using the same Download PDFInfo
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- CN100446234C CN100446234C CNB2004100949709A CN200410094970A CN100446234C CN 100446234 C CN100446234 C CN 100446234C CN B2004100949709 A CNB2004100949709 A CN B2004100949709A CN 200410094970 A CN200410094970 A CN 200410094970A CN 100446234 C CN100446234 C CN 100446234C
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 150
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 238000007789 sealing Methods 0.000 claims abstract description 135
- 239000011347 resin Substances 0.000 claims abstract description 113
- 229920005989 resin Polymers 0.000 claims abstract description 113
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- 238000005859 coupling reaction Methods 0.000 claims description 11
- 238000004080 punching Methods 0.000 description 68
- 238000005516 engineering process Methods 0.000 description 28
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
A method of fabricating a lead frame for a semiconductor device having a semiconductor chip resin-sealed therein. The lead frame includes a lead to be electrically connected to the semiconductor chip within sealing resin and to be sealed into the sealing resin such that at least a part of its mounting surface is exposed from the sealing resin. The method includes a lead forming step for forming the lead, and a side edge coining step for subjecting a side edge of a sealed surface, which is a surface on the opposite side of the mounting surface, of the lead to coining processing from the side of the sealed surface, to form a slipping preventing portion. The slipping preventing portion is to project sideward from the lead and to have a slipping preventing surface between the mounting surface and the sealed surface of the lead.
Description
Technical field
The present invention relates to a kind ofly carry out resin-sealed and the manufacture method lead frame that semiconductor device that make is used to semiconductor chip, and the manufacture method of using the semiconductor device of this method, this lead frame and the semiconductor device that uses this lead frame.
Background technology
In order to be installed in semiconductor device on the circuit board to high-density, from before just using a kind of lead-in wire of can getting rid of from the outside extension of cast resin-encapsulated always, lower surface in encapsulation exposes the leading part (terminal portion that is electrically connected with semiconductor chip) of lead frame, and the high-density installation that can carry out mounted on surface on circuit board is with encapsulating.With encapsulation, QFN (Quad Flat Non-leaded Package) and SON known no lead packages such as (Small Outlined Non-leadedPackage) are arranged as such high-density installation.
In the encapsulation of these forms,, therefore there is leading part this problem that from the cast resin, comes off easily because the lower surface that makes the leading part that is sealed by the cast resin exposes with the lower surface of semiconductor chip from encapsulation.Therefore, there is the people that leading part is set as the back taper shape, perhaps forms end difference, thereby realize preventing coming off of leading part in the side of leading part.
In order to form the leading part of such cross sectional shape, be the processing of carrying out lead frame by etching in the past, because this processing needs the long period, therefore, for example announced in No. the 6664133rd, the United States Patent (USP) recently like that, motion a kind of manufacture method of using the lead frame of precise punching die.
The method of this United States Patent (USP), by lower face side from lead frame, metallic plate as the material of lead frame is carried out Punching Technology and lead frame is made in extrusion process by drift, be formed with in the front end of this leading part and side surface part and be used for preventing the stairstepping that comes off.
In particular, in the method for above-mentioned United States Patent (USP), the central portion of formed leading part is broader, to the side edge part of this central portion, imposes extrusion process from its lower face side by drift, has so just formed to be used for preventing 2 sections shapes coming off.In addition, in order to prevent to produce overlap when the extrusion process of carrying out from lower face side, make on the central portion of leading part and the side between the base portion and form necking down.
In the method for above-mentioned United States Patent (USP), when lower surface carried out extrusion process, the shape of the resulting leading part lower surface of Punching Technology was damaged.Therefore, be used for to become desired shape (for example rectilinear form) with the outside leading part lower surface that is electrically connected.
In addition,, must form necking down between central portion and the base portion in order to prevent metallic overlap when carrying out extrusion process, very complicated by Punching Technology in the shape of initial formed leading part.Therefore, be used for the mould (drift) of Punching Technology, need and be subjected to complicated processed mould.
Therefore, in the prior art of being put down in writing in the above-mentioned United States Patent (USP), need a plurality of precise structure and complicated mould, the manufacturing cost of mould increases, and the result has caused the manufacturing expense of lead frame, and the manufacturing expense of semiconductor device uprises this problem.
In addition, in the above-mentioned semiconductor packages, in order to improve the thermal diffusivity of semiconductor chip, and also practicability of the encapsulation (for example HQFN:Heat sinked Quad Flat Non-leaded Package) of this structure that the island portion (carrying the chip support portion of semiconductor chip) that makes lead frame exposes at the lower surface of encapsulation.
In the encapsulation of this structure,, therefore there is island portion this problem that from the cast resin, comes off easily because the lower surface that makes the island portion that is sealed by the cast resin exposes with the lower surface of semiconductor chip in encapsulation.Therefore, there is the people that the end face of island portion is set as the back taper shape, perhaps forms end difference, thereby realize preventing coming off of island portion.
The formation of the island portion of such cross sectional shape, for example disclosed in U.S. Patent application 2002/0096790A1 communique, undertaken by etching.
But, carry out the processing of island end surface by etching, because operating cost is higher, therefore exists and can't make this problem of lead frame at a low price.
In addition, in the prior art of above-mentioned communique, expose from the lower surface of encapsulation simultaneously in order to make leading part and island portion, and the two is being configured in before the resin-encapsulated on the same plane.Therefore, clamping leading part and when being injected into the cast resin in the inner chamber between mould between upper and lower mould since not from patrix to island portion actuating pressure, so can stretch lower surface of island portion of resin.Like this, produced island portion lower surface expose insufficiently, can not get this problem of desired cooling effect.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method of lead frame of the anti-loose structure that can form leading part at a low price and the manufacture method of using the semiconductor device of this method.
In addition, another object of the present invention is, a kind of lead frame of the anti-loose structure that can form leading part at a low price and the semiconductor device that uses this lead frame are provided.
Another object of the present invention is, a kind of method that can make the lead frame of the anti-loose structure with chip support portion at a low price is provided, and the manufacture method that can reduce the semiconductor device of expense by using this method.
In addition, another object of the present invention is, a kind of anti-loose structure with chip support portion is provided, and the lead frame that can make at a low price, and can realize the semiconductor device of the reduction of manufacturing expense by using this lead frame.
Another object of the present invention is, the manufacture method of the lead frame that a kind of lower surface that can make the chip support portion exposes from sealing resin reliably is provided, and the manufacture method of using the semiconductor device of this method.
In addition, another object of the present invention is, the lead frame of the structure that a kind of lower surface that can make the chip support portion exposes from sealing resin reliably is provided, and the semiconductor device that uses this lead frame.
The manufacture method of the lead frame of the 1st mode of the present invention, be used for making and carry out resin-sealed and lead frame that semiconductor device that make is used semiconductor chip, this lead frame have be electrically connected in sealing resin with above-mentioned semiconductor chip and at least the part of installed surface from above-mentioned sealing resin, be sealed in leading part in the above-mentioned sealing resin with exposing.This method comprises: the leading part that forms above-mentioned leading part forms operation; And side edge part impression manufacturing procedure, by from as with the sealing surface side of the face of the above-mentioned installed surface opposition side of above-mentioned leading part, the side edge part of the above-mentioned sealing surface of this leading part is implemented impression processing, form the anti-delinking part of stretching out and between the above-mentioned installed surface of this leading part and sealing surface, having the anticreep face to the side of this leading part.
According to this method, impress processing by sealing surface side from leading part, form the anti-delinking part of stretching out to the side of leading part.This anti-delinking part, owing on the centre position (between installed surface and the sealing surface) of the thickness of slab of leading part, have the anticreep face, therefore, and when resin-sealed, the stretch installed surface side of anticreep face of resin.Thereby can prevent that leading part from coming off from sealing resin.
Because the formation of anti-delinking part is to impress processing by the sealing surface from leading part to carry out, and therefore adds man-hour at this impression, can be reprocessed into the limit portion of collapsing of the installed surface side of leading part smooth.Therefore can reduce sealing resin stretching to the installed surface side of leading part.Simultaneously, owing to be used to impress the shape of processed mould, it is simpler to be used for the mould of lower surface extrusion process than No. the 6664133rd, United States Patent (USP) of the prior art, therefore the manufacturing expense that can reduce lead frame and use the semiconductor device of this lead frame.
In addition, because the sealing surface of leading part is sealed in the resin, therefore its lateral margin does not need finally have rectilinear form, by the outer lead part with the installed surface of leading part (is exposed below sealing resin, being used for outside the connection) The corresponding area applies impression processing, can form above-mentioned anti-delinking part.Therefore, because the formation of anti-delinking part need not set in advance wide width part on leading part.Owing to utilize Punching Technology etc. at the initial leading part that forms, it can be the simple shape (rectilinear form) of the end difference (end difference in the plan view) that do not have essence on the side, also can realize the reduction of manufacturing expense from this point, can form the anti-delinking part simultaneously and do not produce overlap.
As optimal way, above-mentioned leading part forms operation, comprises the operation that above-mentioned leading part is formed elongate in shape.In this case, above-mentioned side edge part impression manufacturing procedure preferably includes in a plurality of positions with the devices spaced apart on the length direction of above-mentioned leading part, forms the operation of above-mentioned anti-delinking part.In this method, leading part is formed strip, and a plurality of positions of the devices spaced apart on its length direction form above-mentioned anti-delinking part.Like this, can prevent effectively that leading part from coming off from sealing resin along its length direction.
In addition, as optimal way, form operation at above-mentioned leading part, comprise above-mentioned leading part is formed under the situation of operation of elongate in shape, above-mentioned side edge part impresses manufacturing procedure, can be included in the both side edges portion of the above-mentioned sealing surface of above-mentioned leading part, forms the operation of above-mentioned anti-delinking part.By this method,, therefore can prevent coming off of leading part effectively owing to form the anti-delinking part in the both side edges of the leading part of strip.
As optimal way, above-mentioned leading part forms operation, comprises the operation of the metallic plate as the material of lead frame being carried out Punching Technology.According to this method, can carry out the formation of leading part and the formation of anti-delinking part by a series of punch process.Above-mentioned Punching Technology is preferably carried out from the installed surface side of leading part, and the installed surface side of leading part just can not produce overlap like this.
The manufacture method of the semiconductor device of the 1st mode of the present invention, comprise the operation of making lead frame according to said method, and the operation that the above-mentioned sealing surface of above-mentioned leading part is electrically connected with semiconductor chip, and resin-sealed above-mentioned semiconductor chip and above-mentioned lead frame, and the resin-sealed operation exposed of a part that makes the above-mentioned at least installed surface of above-mentioned leading part, and with the operation of the unwanted part excision of above-mentioned lead frame.As optimal way, above-mentioned resin-sealed operation comprises by above-mentioned sealing resin semiconductor chip and lead frame are sealed, and makes the operation of the above-mentioned anti-delinking part of end face crosscut of sealing resin.
The lead frame of the 1st mode of the present invention is to carry out resin-sealed and lead frame that semiconductor device that make is used to semiconductor chip.This lead frame comprises: leading part, be sealed in the above-mentioned sealing resin, and be electrically connected in sealing resin with above-mentioned semiconductor chip, and the part of installed surface is exposed from above-mentioned sealing resin at least; And the anti-delinking part, by from the face of the above-mentioned installed surface opposition side of above-mentioned leading part, be that the impression processing that the sealing surface side is carried out forms, and outstanding to the side of this leading part.This lead frame, the installed surface of leading part because resin can not stretched, so reliability is higher, can hang down expense manufacturing in addition.
As optimal way, above-mentioned leading part can form elongate in shape, and in this case, above-mentioned anti-delinking part is preferably formed on a plurality of positions with the devices spaced apart on the length direction of above-mentioned leading part.
In addition, as optimal way, form at above-mentioned leading part under the situation of elongate in shape, above-mentioned anti-delinking part is formed in the both side edges portion of above-mentioned sealing surface of above-mentioned leading part.
The semiconductor device of the 1st mode of the present invention, comprise aforesaid lead frame, and the semiconductor chip that is electrically connected with this lead frame, and this semiconductor chip and above-mentioned lead frame sealed, and the sealing resin that the installed surface of above-mentioned leading part is exposed.This semiconductor device can also comprise the protuberance that above-mentioned lead frame and above-mentioned semiconductor chip are not electrically connected with having line.In addition, above-mentioned sealing resin can be formed the state of its end face with the crosscut of above-mentioned anti-delinking part.
In the manufacture method of the lead frame of the 2nd mode of the present invention, described lead frame is the lead frame that is used for semiconductor device, described semiconductor device is to carry out resin-sealed and semiconductor device that make to semiconductor chip, this lead frame has the chip support portion of carrying above-mentioned semiconductor chip, described chip support portion have the sealing surface that sealed resin seals and from above-mentioned sealing resin, expose expose face, the manufacture method of described lead frame comprises: metallic plate is formed finishing, form the operation of said chip support portion; And by from above-mentioned face side or the above-mentioned sealing surface side exposed, edge portion to the said chip support portion implements impression processing, on the above-mentioned position of exposing between face and the above-mentioned sealing surface of this chip support portion, form the operation of the anti-delinking part of stretching out to the side from the edge portion of this chip support portion.
According to this method,, can pass through operation at a low price and form the anti-delinking part owing to, therefore compare with the occasion that forms the anti-delinking part by etching work procedure by from exposing face side or sealing surface side edge portion enforcement impression processing formation anti-delinking part to the chip support portion.Like this, can realize the reduction of the manufacturing expense of lead frame.
By the formed anti-delinking part of impression processing, owing to stretch out to the side from the edge portion of chip support portion in the centre position (between installed surface and the sealing surface) of the thickness of slab of leading part, therefore, when resin-sealed, resin is stretched and is exposed the face side to this.Thereby can prevent that leading part from coming off from sealing resin.
To the impression processing that the edge portion of chip support portion is carried out, both can carry out the region-wide of this edge portion, also can carry out a part.
As optimal way, the said chip support portion forms operation, comprises the above-mentioned above-mentioned sealing surface side of face side direction of exposing from the said chip support portion, above-mentioned metallic plate is die-cut into the die-cut operation of the shape of said chip support portion.According to this method, by the acceptance division as the material of lead frame being carried out the die-cut chip support portion that forms from exposing the face side.Therefore, owing to can use press-working apparatus to carry out the formation of chip support portion and the formation of above-mentioned anti-delinking part, thus can make lead frame at a low price.
In addition, owing to, can not produce overlap outstanding from sealing resin, can make therefore that to expose face smooth, inhibition resin exposing adhering to of face in the chip support portion by implementing impression processing and forms the chip support portion from exposing the face side.
In order to prevent that more effectively resin from stretching exposing on the face of chip support portion,, the edge portion of chip support portion roughly region-wide applied impression processing (can by carrying out with the common operation of the impression processing that is used for forming above-mentioned anti-delinking part) preferably from sealing surface.Like this, can reduce or eliminate the limit of collapsing that is produced by the edge portion of exposing face in the chip support portion, can suppress or prevent therefore that sealing resin from stretching to the face that exposes of chip support portion from exposing impression processing that face carries out.
As optimal way, comprise in the said method forming and be sealed in the above-mentioned sealing resin, be electrically connected in sealing resin with above-mentioned semiconductor chip, and as the operation of the leading part that from above-mentioned sealing resin, exposes with at least a portion of the installed surface of the face that exposes the face homonymy of said chip support portion; And formation will keep the frame portion of above-mentioned leading part and the operation of the arch leading part that the said chip support portion combines; And this arch leading part that is shaped, the above-mentioned face that exposes that makes the said chip support portion is positioned at than the installed surface of above-mentioned leading part more to the low operation of establishing in this installed surface pleurapophysis source.
By this method, the chip support portion expose that face is positioned at above the installed surface of leading part and outstanding position.Therefore, if exposing of the installed surface of leading part and chip support portion carried out resin-sealed under the state on the tabular surface that face is pressed against mould,, apply the pushing force of pointing to mould for the chip support portion just the arch leading part can strain.Like this, can suppress or prevent the stretch face that exposes of chip support portion of resin, realize the good semiconductor device of radiating efficiency.
As optimal way, the shaping of arch leading part is undertaken by punch process, can make lead frame at a low price like this.
In addition, as optimal way, the formation of above-mentioned arch leading part is also by from carrying out with the above-mentioned Punching Technology of exposing the face homonymy.
The manufacture method of the lead frame of the 3rd mode of the present invention, described lead frame is the lead frame that is used for semiconductor device, described semiconductor device is to carry out resin-sealed and semiconductor device that make to semiconductor chip, this lead frame has chip support portion and the leading part that carries above-mentioned semiconductor chip, described chip support portion have the sealing surface that sealed resin seals and from described sealing resin, expose expose face, described leading part is sealed in the above-mentioned sealing resin, be electrically connected in above-mentioned sealing resin with above-mentioned semiconductor chip, and from above-mentioned sealing resin, expose with at least a portion that the above-mentioned face that exposes the face homonymy is an installed surface, the manufacture method of described lead frame comprises: metallic plate is formed finishing, form the operation of above-mentioned leading part; Above-mentioned metallic plate is formed finishing, form the operation of said chip support portion; Formation will keep the frame portion of above-mentioned leading part and the operation of the arch leading part that the said chip support portion combines; And this arch leading part that is shaped, the above-mentioned face that exposes that makes the said chip support portion is positioned at than the above-mentioned installed surface of above-mentioned leading part more to the low operation of establishing in this installed surface pleurapophysis source.
As optimal way, above-mentionedly low establish operation, comprise above-mentioned arch leading part is configured as to have than above-mentioned leading part and more establish part, and connect the operation that this height is established part and the coupling part of said chip support portion to the height of the opposition side skew of above-mentioned installed surface.Pass through this method, because the arch leading part has undulations, therefore in the time of on the tabular surface that the chip support portion is pressed in mould, strain easily, thus can suppress the relative displacement (the relative displacement in plan view) of chip support portion and leading part.
The manufacture method of the semiconductor device of the 2nd mode of the present invention comprises the operation of making lead frame by said method; And the operation of carrying semiconductor chip in the above-mentioned sealing surface side of said chip support portion; And resin-sealed above-mentioned semiconductor chip and above-mentioned lead frame, and make the above-mentioned resin-sealed operation of showing out of exposing of said chip support portion.
As optimal way, above-mentioned resin-sealed operation, be included in the installed surface of the leading part of above-mentioned lead frame and said chip support portion above-mentioned exposed under the state on the tabular surface that face is pressed in mould, seal the operation of above-mentioned leading part and chip support portion by sealing resin.By this method, can access the semiconductor device that exposes the state that face exposes from sealing resin of the installed surface of leading part and chip support portion.
The lead frame of the 2nd mode of the present invention, it is the lead frame that is used for semiconductor device, described semiconductor device is to carry out resin-sealed and semiconductor device that make to semiconductor chip, described lead frame comprises: the chip support portion, carry above-mentioned semiconductor chip, and have exposing face and being sealed in sealing surface in the above-mentioned sealing resin of from sealing resin, exposing; And the anti-delinking part, be positioned on the centre position of thickness direction of this chip support portion, stretch out to the side from the edge portion of this chip support portion, by from above-mentioned face side or the above-mentioned sealing surface side exposed, the edge portion of this chip support portion is implemented impression processing and forms.
As optimal way, this lead frame comprises and being sealed in the above-mentioned sealing resin, be electrically connected in sealing resin with above-mentioned semiconductor chip, and as the leading part that from above-mentioned sealing resin, exposes with at least a portion of the installed surface of the above-mentioned face that exposes the face homonymy; And be shaped as and will keep the frame portion and the said chip support portion of above-mentioned leading part to combine, and make the above-mentioned face that exposes of said chip support portion, be positioned at than the installed surface of above-mentioned leading part more to the arch leading part in this installed surface pleurapophysis source.
The lead frame of the 3rd mode of the present invention, it is the lead frame that is used for semiconductor device, described semiconductor device is to carry out resin-sealed and semiconductor device that make to semiconductor chip, described lead frame comprises: the chip support portion, carry above-mentioned semiconductor chip, and have exposing face and being sealed in sealing surface in the above-mentioned sealing resin of from sealing resin, exposing; Leading part is sealed in the above-mentioned sealing resin, is electrically connected in sealing resin with above-mentioned semiconductor chip, and exposes from above-mentioned sealing resin with at least a portion that the above-mentioned face that exposes the face homonymy is an installed surface; And the arch leading part, be shaped as and will keep the frame portion and the said chip support portion of above-mentioned leading part to combine, and make the above-mentioned face that exposes of said chip support portion, be positioned at above-mentioned installed surface than above-mentioned leading part more to this installed surface pleurapophysis source.
As optimal way, the installed surface of above-mentioned leading part and above-mentioned frame are portion roughly in the same plane with surface above-mentioned installed surface homonymy.
As optimal way, above-mentioned arch leading part has than above-mentioned leading part and more establishes part to the height of the opposition side of above-mentioned installed surface skew, and connects the coupling part that this height is established part and said chip support portion.
The semiconductor device of the 2nd mode of the present invention, comprise above-mentioned lead frame, and by the semiconductor chip of lift-launch on the above-mentioned sealing surface of the chip support portion of this lead frame, and above-mentioned lead frame and semiconductor chip sealed, and make the installed surface of leading part of above-mentioned lead frame and chip support portion above-mentionedly expose the sealing resin that face exposes at grade.
Above-mentioned or other purpose, feature and effect of the present invention, the explanation of the execution mode that can be described below by the contrast accompanying drawing is carried out further clear and definite.
Description of drawings
Fig. 1 is the plane graph of the formation of the lead frame of explanation one embodiment of the present invention.
Fig. 2 is the sectional view that the formation of the semiconductor device that above-mentioned lead frame is installed is described.
Fig. 3 (a) is the plane graph of leading part 2, and Fig. 3 (b) is the longitudinal section (IIIB-IIIB line sectional view) of (a), and Fig. 3 (c) is the cross-sectional view (IIIC-IIIC line sectional view) of (a).
Fig. 4 is used for the schematic diagram of formation of precision stamping device of the manufacturing of above-mentioned lead frame for explanation.
Fig. 5 (a), Fig. 5 (b) and Fig. 5 (c) are the sectional view of the formation of each punching press platform of being used for illustrating above-mentioned precision stamping device.
Fig. 6 is the sectional view of the formation of the semiconductor device of explanation other execution modes of the present invention.
Fig. 7 is the plane graph of the formation of the lead frame of explanation another embodiment of the invention.
Fig. 8 (a) and Fig. 8 (b) are the sectional view that the formation of the semiconductor device that above-mentioned lead frame is installed is described.
Fig. 9 (a) is the local amplification view of the support portion of above-mentioned lead frame, and Fig. 9 (b) is the longitudinal section (the IXB-IXB sectional view of (a)) of support portion and arch leading part, and Fig. 9 (c) is the cross-sectional view (the IXC-IXC sectional view of (a)) of the edge portion of support portion.
Figure 10 is used for the schematic diagram of formation of precision stamping device of the manufacturing of above-mentioned lead frame for explanation.
Figure 11 (a)～Figure 11 (d) is the sectional view of the formation of each punching press platform of being used for illustrating above-mentioned precision stamping device.
Figure 12 is the sectional view of the cross sectional shape of the support portion after the explanation Punching Technology.
Figure 13 (a) and Figure 13 (b) are for being used for illustrating the sectional view of resin sealing process.
Figure 14 is the sectional view of edge portion of support portion of the lead frame of another embodiment of the invention.
Figure 15 is the plane graph of the lead frame of another embodiment of the invention.
Figure 16 (a) and Figure 16 (b) are the plane graph of the lead frame of another embodiment of the invention.
Embodiment
Fig. 1 is the plane graph of the formation of the lead frame of explanation an embodiment of the invention.Shown unit part among Fig. 1, and in fact be connected with left and right directions, all formed the hormogon of a band shape at Fig. 1 corresponding to the unit of a plurality of semiconductor devices part corresponding to 1 semiconductor device.
This lead frame 10 is that metallic plate (particularly copper coin, for example about 200 μ m of thickness of slab) 100 is applied precision stamping processing and produced.Unit part corresponding to 1 semiconductor device, form rectangular shape (being approximate square in the example of Fig. 1), central portion has and is used for the support portion (island portion) 1 of support semiconductor chip having almost uniformly-spaced a plurality of leading parts 2 of configuration around it, forms rectangular shape.
Fig. 2 is the sectional view that the formation of the semiconductor device that above-mentioned lead frame 10 is installed is described.This semiconductor device has lead frame 10, carries semiconductor chip 6, the bonding wire 7 that is electrically connected with the upper surface (sealing surface) of this semiconductor chip 6 and leading part 2 and the sealing resin 8 that they are sealed on the support portion 1 of this lead frame 10.The lower surface 2b (installed surface) of leading part 2 exposes from the lower surface of sealing resin 8, has the function as the outer lead part that combines with wiring figure scolding tin on the circuit substrate.In addition, be sealed in the interior part of sealing resin of leading part 2, have the function as inner lead part, particularly it becomes the inside connecting portion that combines with bonding wire 7 near the part of front end.Like this, constituted surface mount semiconductor encapsulation (QFN).
When this semiconductor device was installed, semiconductor chip 6 was welded on the upper surface of support portion 1 by tube core, and the terminals of this semiconductor chip 6 are connected by bonding wire 7 with the upper surface of leading part 2.Afterwards, under the lower surface 2b of leading part 2 was crushed on state in the mould, the zone in the potted line 50 shown in the double dot dash line among Fig. 1 was by resin-sealed, and like this, semiconductor chip 6, bonding wire 7 and leading part 2 are formed encapsulation by resin-sealed.Afterwards, leading part 2 and arch leading part 4 are cut off, it is excised from frame portion 5 along the side that encapsulates.So just obtained the monolithic of semiconductor device.
Fig. 3 (a) is the plane graph of leading part 2, and Fig. 3 (b) is the longitudinal section (IIIB-IIIB line sectional view) of Fig. 3 (a), and Fig. 3 (c) is the cross-sectional view (IIIC-IIIC line sectional view) of Fig. 3 (a).On the both side edges of the upper surface of leading part 2, be formed with in each anti-delinking part, 2 place 21,22,23,24 (omit among Fig. 1 and show) that length direction separates with certain interval.In the present embodiment, anti-delinking part 21,22,23,24 is set at the zone that relies on support portion 1 side than the cut cut-out line 51 in resin-sealed back, and potted line 50 passes through from the pars intermedia of the length direction of a pair of anti-delinking part 23,24 of base end part side.Therefore, a pair of anti-delinking part 21,22 of front is in the sealing resin 8, in addition, between anti-delinking part 21,22 and the anti-delinking part 23,24 also within sealing resin 8.Like this, formation can prevent the structure that comes off along the length direction of leading part 2.
Anti-delinking part 21,22,23,24 by the upper surface 2a side from leading part 2, impresses processing (coining) and forms its side edge part.In particular, on the lower surface 2b of leading part 2, the upper area of the outer lead part of the rectangle that exposes from the lower surface of sealing resin 8 in resin-sealed back impresses processing to the both side edges of the upper surface 2a of leading part 2.Like this, anti-delinking part 21,22,23,24 has the upper surface lower than upper surface 2a, in addition, is stretching out to the side from the side of leading part 2, than having each lower surface (anticreep face on the higher position of the lower surface 2b of leading part 2.In the example of Fig. 3, along with leaving from the side of leading part 2 towards the inclined-plane of top).Therefore, sealing resin 8, therefore the below of the extension of the anti-delinking part 21～24 of stretching can prevent that leading part 2 from coming off to the below of sealing resin 8.Impression processing to the both side edges of the upper surface 2a that is used for forming anti-delinking part 21～24, for example can be (width W of leading part 2 (for example about 180～200 μ m) about 1/4～1/2) about wide 50 μ m, about high 50 μ m (the thickness of slab H of leading part 2 (for example about 200 μ m) about 1/4～1/3).
On the upper surface 2a of leading part 2,, has function as the bonding wire connecting portion (inner connecting portion) that combines with bonding wire 7 than the zone of anti-delinking part 21,22 more forward end side (support portion 1).On this bonding wire connecting portion, be formed with and be used for making the better coatings 29 of itself and combining of bonding wire 7 (for example thickness is the following silver coatings of 5 μ m.Fig. 1 and Fig. 3 (a) omit demonstration).The lower surface 2b of leading part 2 is with semiconductor chip 6, and the lower surface from sealing resin 8 after resin-sealed exposes, and has as the function that is used for carrying out the external connecting (outer lead part) of mounted on surface on circuit substrate.
On the front end area of leading part 2, imposed impression processing, form the front end anti-delinking part 25 that is offset (for example about 1/3～1/2 of the thickness of slab H of leading part 2) from the lower surface 2b of leading part 2 upward by lower face side from leading part 2.Stretch out to its front in the upper surface side of leading part 2 front end anti-delinking part 25.Semiconductor chip 6 and leading part 2 by resin-sealed state under the anticreep of leading part 2 can be realized in the below of front end anti-delinking part 25 because sealing resin 8 is stretched therefore.
Fig. 4 is the schematic diagram that is used for illustrating the formation of employed precision stamping device in the manufacturing of above-mentioned lead frame 10.Lead frame 10 is transmitted towards direction of transfer R, in turn by punching press platform S1～S4.Punching press platform S1 is for carrying out from following side carry out the Punching Technology portion of Punching Technology as the strip metal plate 100 of material.Punching press platform S2 impresses and adds the Ministry of worker for carrying out the front end lower surface that the leading section of leading part 2 is impressed processing (coining) from following side.Punching press platform S3 adds the Ministry of worker for the front end with leading part 2 in the cut-out of cutting off apart from the off-position of its base end part given length.Punching press platform S4 adds the Ministry of worker for the upper surface that impresses processing (coining) by the both side edges to the upper surface of leading part 2 and form anti-delinking part 21～24 impresses.
Fig. 5 (a) is the cross section that the plane intercepted that intersects by the length direction with leading part 2 for the sectional view of the formation that is used for illustrating punching press platform S1 (Punching Technology portion).Among this punching press platform S1,, impose Punching Technology from its lower surface 100b side to the metallic plate 100 of band shape.In particular, metallic plate 100, be inserted into have respectively and the punch die 61 and compacting part 71 of the corresponding opening 61a of figure of support portion 1 and leading part 2 etc. and 71a between.Under this state, the drift 81 of the shape that is complementary with opening 61a, 71a is pass through openings 71a and 61a in turn, metallic plate 100 is carried out to upper surface 100a from the lower surface 100b of metallic plate 100 die-cut, afterwards, withdraw from from opening 61a, 71a again, move up and down like this.Like this, form support portion 1 and leading part 2 by the Punching Technology of carrying out from lower face side 100b.
Fig. 5 (b) has shown the state of seeing from the side of leading part 2 for the sectional view of the formation that is used for illustrating punching press platform S2 (front end lower surface impression adds the Ministry of worker).This punching press platform S2 by impose impression processing below the leading section of the resulting leading part 2 of Punching Technology, forms front end anti-delinking part 25.In particular, the punch die 62 that will have smooth lower surface is configured in the top of leading part 2, and disposes compacting part 72 below this metallic plate 100.By formed opening 72A on this compacting part 72, drift 82 moves up and down with given stroke (processing corresponding stroke with the impression of 1/3～1/2 degree of the thickness of slab H of leading part 2).
The leading section crossover of drift 82 and leading part 2.Therefore, the leading section of leading part 2 is stamped distortion, from the lower surface 2b indentation skew upward of leading part 2.So just formed above-mentioned front end anti-delinking part 25.
The stroke of drift 82, the upper end that is set to this drift 82 moves to the decline afterwards midway of the thickness of slab of metallic plate 100.
Fig. 5 (c) is the cross section along the plane that the length direction with leading part 2 intersects for the sectional view of the formation that is used for illustrating punching press platform S4 (the upper surface impression adds the Ministry of worker).After on punching press platform S3, front end anti-delinking part 25 being cut off with given length, on this punching press platform S4, the both side edges portion of the upper surface of leading part 2 is impressed processing.On this punching press platform S4, the below of leading part 2 disposes the punch die 63 with smooth upper surface, above leading part 2, be provided with simultaneously compacting part 73, compacting part 73 have be set at respectively and adjacent leading part 2 between corresponding position, interval on and the opening 73a wideer than the interval between the adjacent leading part 2.The drift 83 that moves up and down by opening 73a is configured in the top of compacting part 73.The lower end of drift 83 has the compressive plane 83A wideer than the interval between the adjacent leading part 2.
The stroke of drift 83 is set to its bottom dead center position in the thickness range of the main part 20 of leading part 2.Therefore, by drift 83 is moved up and down, from the upper surface 2a of leading part 2 the both side edges portion of leading part 2 is imposed the extruding of (1/4～1/2 scope of the thickness of slab H of leading part 2 (for example about 200 μ m)) about (1/4～1/3 scope of the width W of the lower surface of leading part 2 (for example 180 μ m～200 μ m)), high 50 μ m about wide 50 μ m respectively, form outstanding anti-delinking part 21～24 respectively in the two sides of leading part 2.Meanwhile, the lower surface 2b of leading part 2 is pressed by punch die 63, the limit portion flatteningization of collapsing that is produced when making Punching Technology.
Like this, after punching press platform S1～S4 formation lead frame 10, the bonding wire connecting portion is carried out coating film treatment (for example silver-plated processing).
In the present embodiment,,, do not need as above-mentioned prior art at centre formation wide width part and necking part for the cross section is approximate rectangular the same in the longitudinal direction simple shape by the initial form of the formed leading part 2 of Punching Technology.Therefore, be used for carrying out the form of the drift 81 of Punching Technology and punch die 61 etc. and uncomplicated, its manufacturing cost is also not too high.So manufacturing expense that can reduce lead frame 10 and the semiconductor device of this lead frame 10 is housed.
And, owing to be not lower surface from leading part 2, but impress processing and form anti-delinking part 21～24 from the top to the both side edges of upper surface 2a, therefore, the side edge part of lower surface 2b that becomes the leading part 2 of outer lead part can keep the rectilinear form at initial stage, guarantees the good installation on circuit board.
In addition, from above the both side edges of the upper surface 2a of the leading part 2 of above-mentioned simple shape impress to add do not produce overlap man-hour, do not need the special countermeasure as above-mentioned prior art.
In addition, in the above-mentioned execution mode, 2 places that separate certain interval at the length direction along leading part 2 have formed anti-delinking part 21～24, but same anti-delinking part, can also form one at each place of both side edges of the upper surface 2a of leading part, can also more than 3 places, form.In addition, can also pass through impression processing, form the anti-delinking part of the total length that roughly extends to leading part 2 both side edges of upper surface 2a.In addition, same anti-delinking part can also be only forms on the lateral margin of the side of the upper surface 2a of leading part 2.
In addition, in the above-mentioned execution mode, leading part 2 is illustrated by the example that bonding wire is electrically connected with semiconductor chip 6, can also be as shown in Figure 6, terminal portions at semiconductor chip 6 is provided with protuberance B, this protuberance B is contacted with the upper surface 2a of leading part 2, form the joint construction of no line.Before engaging, in semiconductor chip 6 and leading part 2, be provided with at least one side and get final product, both can protuberance B be set in leading part 2 sides, can on semiconductor chip 6 and leading part 2 these two sides, protuberance be set all again.
In addition, in the above-mentioned execution mode, in the operation of processing metal plate 100, making lead frame 10, be up at the upper surface of leading part 10, handle by punching press platform S1～S4 under the ventricumbent state of following table, but also can carry out the processing of each operation under the supine state of following table at the upper surface of lead frame 10 down.In this case, the upper and lower relation of the drift of punching press platform S1～S4 and compacting part, punch die be reversed.
In addition, in the above-mentioned execution mode, be a series of manufacturing procedures that in 1 precision stamping device, are used for making lead frame 10 continuously, also a part of operation can be carried out in other device.
Fig. 7 is the plane graph of the formation of the lead frame of explanation another embodiment of the invention.Shown unit part among Fig. 7, and in fact be connected with left and right directions, all formed the hormogon of a band shape at Fig. 7 corresponding to the unit of a plurality of semiconductor devices part corresponding to 1 semiconductor device.
This lead frame 150 is that metallic plate (particularly copper coin, for example about 200 μ m of thickness of slab) 200 is applied precision stamping processing and produced.Unit part corresponding to 1 semiconductor device, form rectangular shape (being approximate square in the example of Fig. 7), central portion has and is used for the support portion (island portion) 301 of support semiconductor chip having almost uniformly-spaced a plurality of leading parts 302 of configuration around it, forms rectangular shape.
Fig. 8 (a) is the sectional view that the formation of the semiconductor device that above-mentioned lead frame 150 is installed is described.This semiconductor device has lead frame 150, carries semiconductor chip 306, the bonding wire 307 that is electrically connected with the upper surface of this semiconductor chip 306 and leading part 302 and the sealing resin 308 that they are sealed on the support portion 301 of this lead frame 150.
Expose from the lower surface of sealing resin 308 as the lower surface 302b of the installed surface of leading part 302, have function as the outer lead part that combines with wiring figure scolding tin on the circuit substrate.In addition, be sealed in the part in the sealing resin 308 of leading part 302, have the function as inner lead part, particularly it relies on the part of front end, becomes the inside connecting portion that combines with bonding wire 307.In addition, support portion 301, its lower surface exposes to become from the lower surface of sealing resin 308 and exposes face, and the lower surface by this support portion 301 discharges the heat that semiconductor chip 306 is produced.Like this, constituted surface mount semiconductor encapsulation (HQFN) with heat-dissipating structure.
When this semiconductor device was installed, semiconductor chip 306 was welded on the upper surface of support portion 301 by tube core, and the terminals of this semiconductor chip 306 are connected by bonding wire 307 with the upper surface of leading part 302.Afterwards, the zone in the potted line 350 shown in the double dot dash line among Fig. 7 is by resin-sealed, and like this, semiconductor chip 306, bonding wire 307 and leading part 302 are formed encapsulation by resin-sealed.Afterwards, leading part 302 and arch leading part 304 are cut off, it is cut off from frame portion 305 along the side that encapsulates.So just obtained the monolithic of semiconductor device.
On the upper surface 302a of leading part 302, has function as the bonding wire connecting portion (inner connecting portion) that engages with bonding wire 307.On this bonding wire connecting portion, be formed with and be used for making the better coatings 329 of itself and combining of bonding wire 307 (for example thickness is the following silver coatings of 5 μ m).In addition, the lower surface 302b of leading part 302 is with semiconductor chip 306, and the lower surface from sealing resin 308 after resin-sealed exposes, and has the function as the external connecting (outer lead part) that is used for installing to the circuit substrate upper surface.
On the front end area of support portion 301 sides of leading part 302, imposed impression processing, form about 1/3～1/2 the front end anti-delinking part 321 that has been offset the thickness of slab of leading part 2 from the lower surface 302b of leading part 302 upward by lower face side from leading part 302.Stretch out to its front in the upper surface side of leading part 302 front end anti-delinking part 321.Semiconductor chip 306 and leading part 302 by resin-sealed state under the anticreep of leading part 302 can be realized in the below of front end anti-delinking part 321 because sealing resin 308 is stretched therefore.
Fig. 8 (b) is the figure of expression along cornerwise cross sectional shape of a plurality of leads 302 formed rectangular shapes.Under the state of sealed resin 308 sealings, the lower surface 304b of the outboard end (base end part) of the lower surface 301b of support portion 301, the lower surface 302b of leading part 302 and arch leading part 304, in the same plane with the lower surface of sealing resin 308.Arch leading part 304 possesses: height is located to establish part 341 and have than support portion 301 higher locational height establishes the strain portion 345 that part 341 is connected the coupling part 342 on the support portion 301 with this height.Before 308 sealings of sealed resin, support portion 301 is by the low below that is located at leading part 302, when resin-sealed, by making 345 distortion of strain portion, is set on the plane identical with leading part 302.
Fig. 9 (a) is the partial enlarged drawing of support portion 301, Fig. 9 (b) is the longitudinal section (the IXB-IXB sectional view of Fig. 9 (a)) of support portion 301 and arch brace portion 304, and Fig. 9 (c) is the cross-sectional view (the IXC-IXC sectional view of Fig. 9 (a)) of the edge portion of support portion 301.On each limit of the support portion 301 of rectangle roughly region-wide, be formed with anticreep protuberance (raised line) 331 by impress processing from above.This anticreep protuberance 331, its upper surface 331a than the upper surface 301a of other parts of support portion 301 low be equivalent to impress the amount (for example about 1/4～12 of the thickness of slab of support portion 301) of the height of processing, and lower surface 331b is than the lower surface 301b height of support portion 301, and stretch out to lateral margin from the centre position of thickness of slab 301 side in the support portion.Therefore, after sealing by sealing resin 308, therefore the below of anticreep protuberance 331 because sealing resin 308 is stretched can prevent that support portion 301 from coming off to the below of sealing resin 308.The width of impression processing for example is about 50～70 μ m.
In addition, arch leading part 304 couples together support portion 301 and frame portion 305 as Fig. 9 (b) shown in, and makes the lower surface 301b of support portion 301 be arranged on that (for example difference in height is littler than thickness of slab than the low position of the lower surface 305b of frame portion 305.About 50 μ m～150 μ m) on.Because the lower surface 305b of frame portion 305 and the lower surface 302b of leading part 302 are in same plane, therefore, the result makes support portion 301 by the low lower surface 302b lower (support portion 301 is all lower than the lower surface 302b of leading part 302 in the present embodiment) that is made as its lower surface 301b than leading part 302.
In particular, arch leading part 304 in frame portion 305 sides, has and is located at the locational height higher than the upper surface 305a of frame portion 305 by height and establishes part 341, and this height is established part 341 and is connected with support portion 301 by coupling part 342.This coupling part 342 is towards the support portion 301 inclination attitude that descend, and is supported on than the lower surface 305b of frame portion 305 support portion 301 more on the position of below.Also be, arch leading part 304 roughly forms S shape, when support portion 301 is loaded the external force of above-below direction, comprise that above-mentioned height establishes strain portion 345 strains of part 341 and coupling part 342, keep support portion 301 and frame portion 305 and the relative position relation of leading part 302 on plan view, allow moving up and down of support portion 301 simultaneously.
Figure 10 is the schematic diagram that is used for illustrating the formation of employed precision stamping device in the manufacturing of above-mentioned lead frame 150.Lead frame 150 is transmitted towards direction of transfer R10, in turn by a plurality of punching press platforms (in the example of Figure 10 being 5) S11～S15.Punching press platform S11 is for carrying out from following side carry out the Punching Technology portion of Punching Technology as the strip metal plate 200 of material.Punching press platform S12 impresses and adds the Ministry of worker for carrying out the front end lower surface that the leading section of leading part 302 is impressed processing (coining) from following side.Punching press platform S13 adds the Ministry of worker for the front end with leading part 302 in the cut-out of cutting off apart from the off-position of its base end part given length.Punching press platform S14 is for to add the Ministry of worker from the region-wide impression that impresses processing (coining) of top edge portion to support portion 301.The arch lead forming that punching press platform S15 is used for making arch leading part 304 be configured as above-mentioned S shape adds the Ministry of worker.
Figure 11 (a) has shown the cross section corresponding to the part of support portion 301 for the sectional view of the formation that is used for illustrating punching press platform S11 (Punching Technology portion).This punching press platform S11 to the metallic plate 200 of band shape, imposes Punching Technology from its lower surface 200b side.In particular, metallic plate 200, be inserted into have respectively and the punch die 361 and compacting part 371 of the corresponding opening 361a of figure of support portion 301 and leading part 302 etc. and 371a between.Under this state, the drift 381 of the shape that is complementary with opening 361a, 371a is in turn by opening 371a and 361a, metallic plate 200 is carried out to upper surface 200a from the lower surface 200b of metallic plate 200 die-cut, afterwards, withdraw from from opening 361a, 371a again, move up and down like this.Like this, form support portion 301 and leading part 302 by carry out Punching Technology from lower face side 302b.Therefore, outstanding downwards by overlap that this Punching Technology produced, be sealed in the sealing resin 308 after resin-sealed carrying out, therefore do not need to eliminate the follow-up manufacturing procedure of overlap.And, because from the Punching Technology of following side, the edge portion of support portion 301, shown in the sectional view of Figure 12, below side edge part become curved surface, produced the so-called limit of collapsing.
Figure 11 (b) has shown the state of seeing from the side of leading part 302 for the sectional view of the formation that is used for illustrating punching press platform S12 (front end lower surface impression adds the Ministry of worker).This punching press platform S12 by impose impression processing below the leading section of the resulting leading part 302 of Punching Technology, forms front end anti-delinking part 321.In particular, the punch die 362 that will have smooth lower surface is configured in the top of leading part 302, and disposes compacting part 372 below this metallic plate 200.By formed opening 372A on this compacting part 372, drift 382 moves up and down with given stroke.The stroke of drift 382, the upper end that is set to this drift 382 moves to the decline afterwards midway of the thickness of slab of metallic plate 200.
The leading section crossover of drift 382 and leading part 302.Therefore, the leading section of leading part 302 is stamped distortion, from the lower surface 302b indentation skew upward of leading part 302.So just formed above-mentioned front end anti-delinking part 321.
Figure 11 (c) has shown the identical cross section with Fig. 9 (c) for the sectional view of the formation that is used for illustrating punching press platform S14 (impression adds the Ministry of worker).After on punching press platform S13, front end anti-delinking part 321 being cut off with given length, on this punching press platform S14, all impress processing from top edge portion to support portion 301.Also be, shown in Figure 11 (c), on this punching press platform S14, the below of support portion 301 disposes the punch die 364 with smooth upper surface, simultaneously be provided with the compacting part 374 that the leading part outside the support portion 301 302 and frame portion 305 pairing parts are pushed above the metallic plate 200, be formed with the opening 374a that the edge portion that makes support portion 301 all exposes on the compacting part 374, be provided with the drift 384 that can move up and down by opening 374a.The lower surface of this punching press platform 384 has the compressive plane 384a that can all push the edge portion of support portion 301.
The stroke of the knee-action of drift 384, the upper surface of the leading part 302 of the bottom dead center position that is set to compressive plane 384a before this impression processing more below on the position of (for example, about 1/4～1/2 of the thickness of slab of leading part 302 below).
The cross sectional shape that impresses the support portion 301 after the processing from above becomes the shape shown in Fig. 9 (c).Also promptly, by edge portion being impressed processing, form above-mentioned anticreep protuberance 331 from top.Simultaneously, by the impression processing of carrying out from above, eliminated the limit of collapsing that is produced in the lower surface edge portion, support portion 301 is until edge portion all is smooth plane, and its edge portion has become almost with the upright vertical surface of an angle of 90 degrees.So, when sealing, can prevent the stretch edge portion of lower surface 301b of support portion 301 of sealing resin 308 effectively by sealing resin 308.
Figure 11 (d) has shown along the cross-sectional configuration of the length direction of arch leading part 304 for the sectional view of the formation of explanation punching press platform S15 (the arch lead forming adds the Ministry of worker).On this punching press platform S15, below arch leading part 304 and support portion 301, dispose punch die 365, the upper surface of this punch die 365 is carved with the convex-concave pattern corresponding to the underside shape of arch leading part 304 after being shaped and support portion 301, simultaneously, dispose drift 385 above arch leading part 304 and support portion 301, the lower surface of this drift 385 is carved with the convex-concave pattern corresponding to the upper surface shape of arch leading part 304 after being shaped and support portion 301.The top of metallic plate 200 disposes the compacting part 375 that has with the regional corresponding opening 375a that encircles leading part 304 and support portion 301, and drift 385 can move up and down with given stroke by above-mentioned opening 375a.
By drift 385 is moved up and down, metallic plate 200 is sandwiched between each sculptured surface of drift 385 and punch die 365 and is applied in pressure, thereby metallic plate 200 is carried out drawing processing.Like this, arch leading part 304 is configured as the aforesaid shape that height is established part 341 and coupling part 342 that has, and support portion 301 is by the low below that is located at the lower surface 305b of frame portion 305.
Like this, after punching press platform S11～S15 formation lead frame 150, the bonding wire connecting portion is carried out coating film treatment (for example silver-plated processing).This coating film treatment also can be carried out encircleing the lead forming first being processed by punching press platform S15.
Figure 13 (a) and Figure 13 (b) are for being used for illustrating the sectional view of resin sealing process, and Figure 13 (a) has shown the cross section corresponding to Fig. 8 (a), and Figure 13 (b) has shown the cross section corresponding to Fig. 8 (b).
In addition, establish because hang down with respect to leading part 302 support portion 301, therefore in the process by patrix 120 and counterdie 110 clamping leading parts 302 and arch leading part 304, support portion 301 is lifted, and encircles strain portion 345 strains of leading part 304.The lower surface of final support portion 301 and the lower surface of leading part 302 are configured at grade.At this moment, because the recuperability of arch leading part 304, support portion 301 is crushed on the smooth upper surface of counterdie 110.Therefore, if under this state, inject sealing resin 308 in cavity 115, sealing resin 308 just can not stretched the lower surface of support portion 301, thereby can seal the combinations thereof body well.Therefore, in the final resulting semiconductor device, the heat that semiconductor chip 306 is produced, can be from the support portion 301 lower surface discharge well.
Figure 14 is the schematic diagram of the formation of explanation another embodiment of the invention, has shown the cross-sectional configuration of the support portion of support semiconductor chip.In the above-described embodiment, impress processing by upper surface 301a and form anticreep protuberance 331 the edge portion of support portion 301, relative therewith, in the present embodiment, impress processing by lower surface, form anticreep protuberance (raised line) 332 with said function to the edge portion of support portion 301.This anticreep protuberance 332 owing to have with respect to the lower surface of the support portion 301 lower surface 332b of skew upwards, therefore by sealing resin 308 its below of stretching, has been realized the anticreep of support portion 301.
In addition, in the above-mentioned execution mode, be from top or below the edge portion of support portion 301 region-wide impressed processing, for example as shown in figure 15, from top or below the part zone of the edge portion of support portion 301 (the example of Figure 15 be mutually between spaced a plurality of positions) impressed processing, also can form good anticreep protuberance 333.
In addition, in the above-mentioned execution mode, be that the example that support portion 301 forms rectangle is described, can also shown in Figure 16 (a) and 16 (b), support portion 301 be formed approximate X-shaped.In the example of Figure 16 (a), roughly region-wide to the edge portion of the support portion 301 of X word shape, from upper face side or below side impose impression processing, thereby form anticreep protuberance (raised line) 334.In addition, in the example of Figure 16 (b), to the part (specifically, being a plurality of positions that in each edge portion of support portion 301, separate) of the edge portion of support portion 301 with certain interval, from upper face side or below side impose impression processing, thereby form anticreep protuberance 335.
In addition, in the above-mentioned execution mode, leading part 302 is illustrated by the example that bonding wire 307 is electrically connected with semiconductor chip 306, can also adopts terminal portions that protuberance is set, the formation that this protuberance is engaged with the upper surface of leading part 302 at semiconductor chip 306.
In addition, in the above-mentioned execution mode, in the operation of processing metal plate 200, making lead frame 150, be up at the upper surface of leading part 150, handle by punching press platform S11～S15 under the ventricumbent state of following table, but also can carry out the processing of each operation under the supine state of following table at the upper surface of lead frame 150 down.In this case, the upper and lower relation of the drift of punching press platform S11～S15 and compacting part, punch die be reversed.
In addition, in the above-mentioned execution mode, be a series of manufacturing procedures that in 1 precision stamping device, are used for making lead frame 150 continuously, but also a part of operation can be carried out in other device.
More than embodiments of the present invention are had been described in detail, but these execution modes only are the object lessons that uses for clear and definite technology contents of the present invention, can not limit and explain that thought of the present invention and scope only are defined by the claims the present invention.
Claims (16)
1. the manufacture method of a lead frame, described lead frame is the lead frame that is used for semiconductor device, described semiconductor device is to carry out resin-sealed and semiconductor device that make to semiconductor chip, this lead frame has the chip support portion of carrying above-mentioned semiconductor chip, described chip support portion have the sealing surface that sealed resin seals and from above-mentioned sealing resin, expose expose face, the manufacture method of described lead frame is characterised in that, comprising:
Metallic plate is formed finishing, form the operation of said chip support portion; And
By from above-mentioned face side or the above-mentioned sealing surface side exposed, edge portion to the said chip support portion implements impression processing, on the above-mentioned position of exposing between face and the above-mentioned sealing surface of this chip support portion, form the operation of the anti-delinking part of stretching out to the side from the edge portion of this chip support portion.
2. the manufacture method of lead frame as claimed in claim 1 is characterized in that:
The operation of above-mentioned formation chip support portion comprises the above-mentioned above-mentioned sealing surface side of face side direction of exposing from the said chip support portion, above-mentioned metallic plate is die-cut into the die-cut operation of the shape of said chip support portion.
3. the manufacture method of lead frame as claimed in claim 1 is characterized in that, comprising:
Formation is sealed in the above-mentioned sealing resin, be electrically connected in sealing resin with above-mentioned semiconductor chip, and with the face that exposes the face homonymy of said chip support portion be the operation of the leading part that from above-mentioned sealing resin, exposes of at least a portion of installed surface;
Formation will keep the frame portion of above-mentioned leading part and the operation of the arch leading part that the said chip support portion combines; And
This arch leading part that is shaped, the above-mentioned face that exposes that makes the said chip support portion is positioned at than the installed surface of above-mentioned leading part more to the low operation of establishing in this installed surface pleurapophysis source.
4. the manufacture method of lead frame as claimed in claim 3 is characterized in that:
Above-mentionedly low establish operation, comprise above-mentioned arch leading part is configured as to have than above-mentioned leading part and more establish part, and connect the operation that this height is established part and the coupling part of said chip support portion to the height of the opposition side skew of above-mentioned installed surface.
5. the manufacture method of a lead frame, described lead frame is the lead frame that is used for semiconductor device, described semiconductor device is to carry out resin-sealed and semiconductor device that make to semiconductor chip, this lead frame has chip support portion and the leading part that carries above-mentioned semiconductor chip, described chip support portion have the sealing surface that sealed resin seals and from described sealing resin, expose expose face, described leading part is sealed in the above-mentioned sealing resin, be electrically connected in above-mentioned sealing resin with above-mentioned semiconductor chip, and from above-mentioned sealing resin, expose with at least a portion that the above-mentioned face that exposes the face homonymy is an installed surface, the manufacture method of described lead frame is characterised in that, comprising:
Metallic plate is formed finishing, form the operation of above-mentioned leading part;
Above-mentioned metallic plate is formed finishing, form the operation of said chip support portion;
Formation will keep the frame portion of above-mentioned leading part and the operation of the arch leading part that the said chip support portion combines; And
This arch leading part that is shaped, the above-mentioned face that exposes that makes the said chip support portion is positioned at than the above-mentioned installed surface of above-mentioned leading part more to the low operation of establishing in this installed surface pleurapophysis source.
6. the manufacture method of lead frame as claimed in claim 5 is characterized in that:
Above-mentionedly low establish operation, comprise above-mentioned arch leading part is configured as to have than above-mentioned leading part and more establish part, and connect the operation that this height is established part and the coupling part of said chip support portion to the height of the opposition side skew of above-mentioned installed surface.
7. the manufacture method of a semiconductor device is characterized in that, comprising:
Make the operation of lead frame according to each described method in the claim 1 to 6;
Carry the operation of semiconductor chip in the above-mentioned sealing surface side of said chip support portion; And
Resin-sealed above-mentioned semiconductor chip and above-mentioned lead frame, and make the above-mentioned resin-sealed operation of showing out of exposing of said chip support portion.
8. the manufacture method of semiconductor device as claimed in claim 7 is characterized in that:
Above-mentioned resin-sealed operation is included in the installed surface of the leading part of above-mentioned lead frame and said chip support portion above-mentioned is exposed under the state on the tabular surface that face is pressed against mould, seals the operation of above-mentioned leading part and chip support portion by sealing resin.
9. a lead frame is the lead frame that is used for semiconductor device, and described semiconductor device is to carry out resin-sealed and semiconductor device that make to semiconductor chip, and described lead frame is characterised in that, comprising:
The chip support portion, it carries above-mentioned semiconductor chip, and has exposing face and being sealed in sealing surface in the above-mentioned sealing resin of exposing from sealing resin; And
The anti-delinking part is positioned on the centre position of thickness direction of this chip support portion, stretches out to the side from the edge portion of this chip support portion, by from above-mentioned face side or the above-mentioned sealing surface side exposed, the edge portion of this chip support portion is implemented impression processing and forms.
10. lead frame as claimed in claim 9 is characterized in that, also comprises:
Leading part is sealed in the above-mentioned sealing resin, is electrically connected in sealing resin with above-mentioned semiconductor chip, and exposes from above-mentioned sealing resin with at least a portion that the above-mentioned face that exposes the face homonymy is an installed surface; And
The arch leading part is shaped as and will keeps the frame portion and the said chip support portion of above-mentioned leading part to combine, and makes the above-mentioned face that exposes of said chip support portion, is positioned at above-mentioned installed surface than above-mentioned leading part more to this installed surface pleurapophysis source.
11. lead frame as claimed in claim 10 is characterized in that:
The installed surface of above-mentioned leading part and above-mentioned frame are portion roughly in the same plane with surface above-mentioned installed surface homonymy.
12. lead frame as claimed in claim 10 is characterized in that:
Above-mentioned arch leading part has than above-mentioned leading part and more establishes part to the height of the opposition side of above-mentioned installed surface skew, and connects the coupling part that this height is established part and said chip support portion.
13. a lead frame is the lead frame that is used for semiconductor device, described semiconductor device is to carry out resin-sealed and semiconductor device that make is characterized in that to semiconductor chip, comprising:
The chip support portion, it carries above-mentioned semiconductor chip, and has exposing face and being sealed in sealing surface in the above-mentioned sealing resin of exposing from sealing resin;
Leading part is sealed in the above-mentioned sealing resin, is electrically connected in sealing resin with above-mentioned semiconductor chip, and exposes from above-mentioned sealing resin with at least a portion that the above-mentioned face that exposes the face homonymy is an installed surface; And
The arch leading part is shaped as and will keeps the frame portion and the said chip support portion of above-mentioned leading part to combine, and makes the above-mentioned face that exposes of said chip support portion, is positioned at above-mentioned installed surface than above-mentioned leading part more to this installed surface pleurapophysis source.
14. lead frame as claimed in claim 13 is characterized in that:
The installed surface of above-mentioned leading part and above-mentioned frame are portion roughly in the same plane with surface above-mentioned installed surface homonymy.
15. lead frame as claimed in claim 13 is characterized in that:
Above-mentioned arch leading part has than above-mentioned leading part and more establishes part to the height of the opposition side of above-mentioned installed surface skew, and connects the coupling part that this height is established part and said chip support portion.
16. a semiconductor device is characterized in that, comprising:
As each described lead frame in the claim 9 to 15;
By the semiconductor chip of lift-launch on the above-mentioned sealing surface of the chip support portion of this lead frame; And
Above-mentioned lead frame and semiconductor chip are sealed, and make the installed surface of leading part of above-mentioned lead frame and chip support portion above-mentionedly expose the sealing resin that face exposes at grade.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003389771A JP4330980B2 (en) | 2003-11-19 | 2003-11-19 | Lead frame manufacturing method and semiconductor device manufacturing method using the same, lead frame and semiconductor device using the same |
| JP2003389770A JP3805767B2 (en) | 2003-11-19 | 2003-11-19 | Lead frame manufacturing method and semiconductor device manufacturing method using the same |
| JP2003389770 | 2003-11-19 | ||
| JP2003389771 | 2003-11-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1619806A CN1619806A (en) | 2005-05-25 |
| CN100446234C true CN100446234C (en) | 2008-12-24 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100949709A Expired - Fee Related CN100446234C (en) | 2003-11-19 | 2004-11-19 | Method of fabricating lead frame and method of fabricating semiconductor device using the same |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7224049B2 (en) |
| KR (1) | KR20050048527A (en) |
| CN (1) | CN100446234C (en) |
| TW (1) | TWI338358B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325699A (en) * | 2012-03-19 | 2013-09-25 | 瑞萨电子株式会社 | Manufacturing method of semiconductor device |
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|---|---|---|---|---|
| MY133357A (en) | 1999-06-30 | 2007-11-30 | Hitachi Ltd | A semiconductor device and a method of manufacturing the same |
| US20060197199A1 (en) * | 2005-03-05 | 2006-09-07 | Lange Bernhard P | Leadframe, coining tool, and method |
| JP5649277B2 (en) | 2008-12-22 | 2015-01-07 | ローム株式会社 | Semiconductor device |
| JP5360686B2 (en) * | 2009-05-27 | 2013-12-04 | 株式会社リコー | Fixing apparatus and image forming apparatus |
| US8501539B2 (en) * | 2009-11-12 | 2013-08-06 | Freescale Semiconductor, Inc. | Semiconductor device package |
| KR101122463B1 (en) * | 2010-01-04 | 2012-02-29 | 삼성전기주식회사 | lead frame |
| US8329509B2 (en) | 2010-04-01 | 2012-12-11 | Freescale Semiconductor, Inc. | Packaging process to create wettable lead flank during board assembly |
| CN102789994B (en) | 2011-05-18 | 2016-08-10 | 飞思卡尔半导体公司 | The wettable semiconductor device in side |
| US8841758B2 (en) | 2012-06-29 | 2014-09-23 | Freescale Semiconductor, Inc. | Semiconductor device package and method of manufacture |
| JP6129645B2 (en) * | 2013-05-29 | 2017-05-17 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
| CN105895611B (en) | 2014-12-17 | 2019-07-12 | 恩智浦美国有限公司 | With wettable side without lead quad flat semiconductor packages |
| JP7368055B2 (en) | 2019-06-21 | 2023-10-24 | ローム株式会社 | Semiconductor device and mounting structure of semiconductor device |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20060110857A1 (en) | 2006-05-25 |
| TWI338358B (en) | 2011-03-01 |
| TW200522325A (en) | 2005-07-01 |
| US20050106783A1 (en) | 2005-05-19 |
| KR20050048527A (en) | 2005-05-24 |
| US7224049B2 (en) | 2007-05-29 |
| CN1619806A (en) | 2005-05-25 |
| US7456049B2 (en) | 2008-11-25 |
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