CN100444613C - 用于cmos图像传感器的模拟图像信号处理电路 - Google Patents
用于cmos图像传感器的模拟图像信号处理电路 Download PDFInfo
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- CN100444613C CN100444613C CNB2005101214367A CN200510121436A CN100444613C CN 100444613 C CN100444613 C CN 100444613C CN B2005101214367 A CNB2005101214367 A CN B2005101214367A CN 200510121436 A CN200510121436 A CN 200510121436A CN 100444613 C CN100444613 C CN 100444613C
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- 238000012545 processing Methods 0.000 title abstract description 5
- 239000003990 capacitor Substances 0.000 claims abstract description 90
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005101214367A CN100444613C (zh) | 2005-12-29 | 2005-12-29 | 用于cmos图像传感器的模拟图像信号处理电路 |
EP06840681.8A EP1971131B1 (en) | 2005-12-29 | 2006-12-28 | Analog image signal processing circuit for cmos image sensor |
US12/159,205 US8125548B2 (en) | 2005-12-29 | 2006-12-28 | Analog image signal processing circuit for CMOS image sensor |
KR1020087017295A KR100992091B1 (ko) | 2005-12-29 | 2006-12-28 | Cmos 이미지 센서를 위한 아날로그 이미지 신호 처리 회로 |
PCT/CN2006/003645 WO2007073695A1 (fr) | 2005-12-29 | 2006-12-28 | Circuit de traitement d'images analogiques pour capteur d'images cmos |
Applications Claiming Priority (1)
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CNB2005101214367A CN100444613C (zh) | 2005-12-29 | 2005-12-29 | 用于cmos图像传感器的模拟图像信号处理电路 |
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Publication Number | Publication Date |
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CN1992788A CN1992788A (zh) | 2007-07-04 |
CN100444613C true CN100444613C (zh) | 2008-12-17 |
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CNB2005101214367A Expired - Fee Related CN100444613C (zh) | 2005-12-29 | 2005-12-29 | 用于cmos图像传感器的模拟图像信号处理电路 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105758837A (zh) * | 2016-02-26 | 2016-07-13 | 天津大学 | 基于二维光谱数据的拉曼光谱背景噪声去除方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101378513B (zh) * | 2007-08-28 | 2011-01-12 | 比亚迪股份有限公司 | 高增益模拟信号处理电路 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5751189A (en) * | 1995-10-03 | 1998-05-12 | Omnivision Technologies, Inc. | Charge amplifier for MOS imaging array and method of making same |
WO2005091624A1 (ja) * | 2004-03-17 | 2005-09-29 | Fujitsu Limited | 自動利得制御回路 |
JP2005348040A (ja) * | 2004-06-02 | 2005-12-15 | Canon Inc | 増幅型撮像装置及び撮像システム |
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- 2005-12-29 CN CNB2005101214367A patent/CN100444613C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5751189A (en) * | 1995-10-03 | 1998-05-12 | Omnivision Technologies, Inc. | Charge amplifier for MOS imaging array and method of making same |
WO2005091624A1 (ja) * | 2004-03-17 | 2005-09-29 | Fujitsu Limited | 自動利得制御回路 |
JP2005348040A (ja) * | 2004-06-02 | 2005-12-15 | Canon Inc | 増幅型撮像装置及び撮像システム |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105758837A (zh) * | 2016-02-26 | 2016-07-13 | 天津大学 | 基于二维光谱数据的拉曼光谱背景噪声去除方法 |
CN105758837B (zh) * | 2016-02-26 | 2018-11-30 | 天津大学 | 基于二维光谱数据的拉曼光谱背景噪声去除方法 |
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CN1992788A (zh) | 2007-07-04 |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Assignor: BYD Co.,Ltd. Contract fulfillment period: 2008.4.25 to 2015.8.16 Contract record no.: 2008440000068 Denomination of invention: Signal processing circuit of analog image for CMOS image sensor License type: General permission Record date: 20080504 |
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Free format text: COMMON LICENCE; TIME LIMIT OF IMPLEMENTING CONTACT: 2008.4.25 TO 2015.8.16 Name of requester: SHENZHEN BIYADI MICRO-ELECTRONIC CO., LTD. Effective date: 20080504 |
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Effective date of registration: 20191230 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: 518119 BYD Industrial Park, Yanan Road, Kwai Chung Town, Longgang District, Guangdong, Shenzhen Patentee before: BYD Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
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