CN100442456C - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN100442456C
CN100442456C CNB2006800006571A CN200680000657A CN100442456C CN 100442456 C CN100442456 C CN 100442456C CN B2006800006571 A CNB2006800006571 A CN B2006800006571A CN 200680000657 A CN200680000657 A CN 200680000657A CN 100442456 C CN100442456 C CN 100442456C
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CN
China
Prior art keywords
mentioned
reaction chamber
vacuum reaction
supply nozzle
value
Prior art date
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Expired - Fee Related
Application number
CNB2006800006571A
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English (en)
Chinese (zh)
Other versions
CN101006564A (zh
Inventor
松田竜一
井上雅彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
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Mitsubishi Heavy Industries Ltd
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Filing date
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Publication of CN101006564A publication Critical patent/CN101006564A/zh
Application granted granted Critical
Publication of CN100442456C publication Critical patent/CN100442456C/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
CNB2006800006571A 2005-02-28 2006-02-22 等离子体处理装置 Expired - Fee Related CN100442456C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005053180A JP2006237479A (ja) 2005-02-28 2005-02-28 プラズマ処理装置
JP053180/2005 2005-02-28

Publications (2)

Publication Number Publication Date
CN101006564A CN101006564A (zh) 2007-07-25
CN100442456C true CN100442456C (zh) 2008-12-10

Family

ID=36941031

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006800006571A Expired - Fee Related CN100442456C (zh) 2005-02-28 2006-02-22 等离子体处理装置

Country Status (6)

Country Link
US (1) US20080115728A1 (enExample)
JP (1) JP2006237479A (enExample)
KR (1) KR100861826B1 (enExample)
CN (1) CN100442456C (enExample)
TW (1) TW200644047A (enExample)
WO (1) WO2006092997A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI341872B (en) * 2006-08-07 2011-05-11 Ind Tech Res Inst Plasma deposition apparatus and depositing method thereof
JP2008147526A (ja) * 2006-12-12 2008-06-26 Phyzchemix Corp 基板周縁部の不要物除去方法及び装置、並びに半導体製造装置
US8956500B2 (en) * 2007-04-24 2015-02-17 Applied Materials, Inc. Methods to eliminate “M-shape” etch rate profile in inductively coupled plasma reactor
JP5649153B2 (ja) * 2008-07-11 2015-01-07 住友重機械工業株式会社 プラズマ処理装置およびプラズマ処理方法
TWI498053B (zh) * 2008-12-23 2015-08-21 Ind Tech Res Inst 電漿激發模組
JP5449239B2 (ja) * 2010-05-12 2014-03-19 東京エレクトロン株式会社 基板処理装置、基板処理方法及びプログラムを記録した記憶媒体
US10658161B2 (en) * 2010-10-15 2020-05-19 Applied Materials, Inc. Method and apparatus for reducing particle defects in plasma etch chambers
JP5902896B2 (ja) * 2011-07-08 2016-04-13 東京エレクトロン株式会社 基板処理装置
US9941100B2 (en) * 2011-12-16 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. Adjustable nozzle for plasma deposition and a method of controlling the adjustable nozzle
US20140007811A1 (en) * 2012-07-09 2014-01-09 Shenzhen China Star Optoelectronics Technology Co. Ltd. Repairing device for repairing disconnected line
JP6096547B2 (ja) * 2013-03-21 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置及びシャワープレート
US10008367B2 (en) * 2013-06-26 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Gas diffuser unit, process chamber and wafer processing method
KR101962915B1 (ko) * 2014-02-20 2019-03-27 주식회사 원익아이피에스 기판 처리 장치 및 기판 처리 방법
JP6297509B2 (ja) * 2015-01-26 2018-03-20 東京エレクトロン株式会社 基板処理装置
US20180294139A1 (en) * 2017-04-07 2018-10-11 Applied Materials, Inc. Gas phase particle reduction in pecvd chamber
CN111132449B (zh) * 2020-01-02 2025-03-25 成都理工大学 一种球栅阵列封装pcb基板及其阻抗匹配方法
CN113445015A (zh) * 2020-03-26 2021-09-28 中国科学院微电子研究所 一种集成镀膜设备的样品传输装置
KR102820371B1 (ko) * 2022-10-17 2025-06-13 한양대학교 산학협력단 무선 편향 전극을 이용한 플라즈마 발생 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092598A (ja) * 1996-05-13 1998-04-10 Applied Materials Inc 上部にソレノイドアンテナを有する電磁結合ｒｆプラズマリアクター
JPH10258227A (ja) * 1997-01-02 1998-09-29 Applied Materials Inc ハイブリッド導体と多半径ドームシーリングを持つｒｆプラズマリアクタ
CN1423827A (zh) * 1999-11-15 2003-06-11 兰姆研究有限公司 用于产生均匀加工速率的方法和装置
CN1574199A (zh) * 2003-06-24 2005-02-02 三星电子株式会社 高密度等离子体加工设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
JPH0997786A (ja) * 1995-09-29 1997-04-08 Kobe Steel Ltd プラズマ処理方法及びその装置
US5885358A (en) * 1996-07-09 1999-03-23 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
JP3348768B2 (ja) * 1997-08-22 2002-11-20 日本電気株式会社 アルミ及びアルミ合金膜のドライエッチング装置、ドライエッチング方法、半導体装置の製造装置、半導体装置の製造方法及び半導体装置
US7744735B2 (en) * 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
JP2004140219A (ja) * 2002-10-18 2004-05-13 Nec Kyushu Ltd 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1092598A (ja) * 1996-05-13 1998-04-10 Applied Materials Inc 上部にソレノイドアンテナを有する電磁結合ｒｆプラズマリアクター
JPH10258227A (ja) * 1997-01-02 1998-09-29 Applied Materials Inc ハイブリッド導体と多半径ドームシーリングを持つｒｆプラズマリアクタ
CN1423827A (zh) * 1999-11-15 2003-06-11 兰姆研究有限公司 用于产生均匀加工速率的方法和装置
CN1574199A (zh) * 2003-06-24 2005-02-02 三星电子株式会社 高密度等离子体加工设备

Also Published As

Publication number Publication date
CN101006564A (zh) 2007-07-25
KR20070083488A (ko) 2007-08-24
TW200644047A (en) 2006-12-16
KR100861826B1 (ko) 2008-10-07
JP2006237479A (ja) 2006-09-07
TWI303844B (enExample) 2008-12-01
WO2006092997A1 (ja) 2006-09-08
US20080115728A1 (en) 2008-05-22

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