CN100440476C - Substrate placing mechanism and substrate processing device - Google Patents
Substrate placing mechanism and substrate processing device Download PDFInfo
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- CN100440476C CN100440476C CNB2006101289620A CN200610128962A CN100440476C CN 100440476 C CN100440476 C CN 100440476C CN B2006101289620 A CNB2006101289620 A CN B2006101289620A CN 200610128962 A CN200610128962 A CN 200610128962A CN 100440476 C CN100440476 C CN 100440476C
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Abstract
The present invention provides a substrate placing mechanism, to restrain the reaction product generated accompanying with the supply of process gas to deposit at the gap of pin-inserting holes configured to a placing stage provided for placing a substrate and lifter-pins lifting in said pin-inserting holes and exchanging substrate on the placing stage. The substrate placing mechanism includes: a circular protrusion part at an opening part of a lower end of pin-inserting holes protruding inwardly and circularly; a diameter-increasing part formed in said lifter-pins configured to be supported by the circular protrusion to close the opening part when a corresponding lifter-pin is caused to move down. The process gas entering into around of a placing stage provided for placing a substrate is difficult to enter from the lower end of pin-inserting holes, this can restrain the reaction product to deposit at the gap of lifter-pins and pin-inserting holes, so it can restrain obstacles of moving the lifter-pins.
Description
Technical field
The present invention relates to have the mounting table of the processed substrate of mounting, utilize and pass through elevating mechanism and the lifter pin of lifting, the substrate placing mechanism of the processed substrate of lifting and substrate board treatment with this carrying mechanism.
Background technology
In the prior art, with regard to utilize CVD (chemical vapour deposition (CVD)) that processed substrate (for example semiconductor wafer (hereinafter referred to as wafer)) is carried out that film forming is handled or the device of various processing such as etch processes with regard to, it has the container handling that relative wafer is supplied with the processing gas of handling in inside, in addition, inside at this container handling is provided with carrying mechanism, and this carrying mechanism has the mounting table that is used for the wafer that mounting handles.This carrying mechanism plays in mounting table and carries out the effect of wafer exchange between with the transport mechanism (not shown) of wafer transfer to the container handling.
With reference to Fig. 9, the wafer carrying mechanism 1 of this prior art is described, 11 representatives is mounting table among the figure, 12 representatives be the mounting surface of the wafer W on this mounting table 11.For example, on mounting table 11, be equipped with three through holes towards vertical direction in the mode that separates certain intervals along its circumferencial direction.The chimeric sleeve 13 that is fixed with in each through hole.Be inserted with lifter pin 15 in sleeve 13, simultaneously, be provided with pin pedestal 16 below lifter pin 15, pin pedestal 16 is connected with the unshowned drive division of figure by lifting arm 17.When lifter pin 15 did not carry out the exchange of wafer W, shown in Fig. 9 (a), the upper end of lifter pin 15 was positioned at the below of the mounting surface 12 of mounting table 11, and this position is called as initial position; When carrying mechanism 1 when transport mechanism is accepted wafer W, by the rising of lifting arm 17, pin pedestal 16 pushes away each lifter pin 15 that is in initial position on vertical direction, thus shown in Fig. 9 (b), lifter pin 15 is outstanding from mounting table 11.Then, the back side of the wafer W in the container handling is moved in these outstanding lifter pin 15 supportings by transport mechanism.Then, pin pedestal 16 descends, and along with the decline of this pin pedestal 16, lifter pin 15 keeps the state of supporting wafer W to descend, and turns back to above-mentioned initial position, thereby, wafer W is positioned on the mounting table 11.Wherein, in order to make lifter pin 15 lifting successfully in sleeve 13, be provided with a certain size gap between the inwall of sleeve 13 and lifter pin 15, the part of this lifter pin 15 contacts with the inwall of sleeve 13, and lifting in sleeve.
But, in the carrying mechanism of above-mentioned prior art, have problem as described below.For example, the film formation device of using for Ti (titanium) film that forms on wafer W by CVD as conducting film, when with the wafer W conveyance to the container handling of this film formation device, and mounting is after on the mounting table 11, will be as the TiCl of film forming gas
4Gas is supplied under the interior situation of container handling, this TiCl
4The part of gas flow into mounting table 11 below.Because TiCl
4Gas flows in the gap between solid, forms sediment (deposit) in this gap easily, therefore, and for this TiCl
4Gas, shown in Figure 10 (a) arrow, from the bottom of mounting table 11 enters gap between above-mentioned lifter pin 15 and the sleeve 13, sometimes shown in figure (10b) like that, formation can be stopped up the sediment (deposit) 19 in this gap.Like this, as if forming this sediment 19 and accumulating, then lifter pin 15 can not successfully move in sleeve 13, can not drop to initial position, perhaps might be fixed on the sleeve 13, and in this state, when utilizing pin pedestal Final 16 system to rise, lifter pin 15 might fracture.
In addition, when the film formation device that uses CVD utilizes under the situation of plasma, if by above-mentioned TiCl
4In the gap of conductivity sediment 19 Deng the gas generation attached to lifter pin 15 and sleeve 13, so, when in container handling, producing plasma, because create a difference between the current potential of the current potential of lifter pin 15 and mounting table 11, and produce paradoxical discharge around causing lifter pin 15, cause lifter pin 15 to worsen, thereby quicken its breakage.
Yet, as mentioned above, stop up the phenomenon in the gap between lifter pins 15 and the sleeve 13 by the sediment 19 of film forming gas generation, have more than and be limited to said process, in addition, in the carrying mechanism of Etaching device, the particle of the reaction product that produces because of etching also can stop up above-mentioned gap sometimes, produces same problem.
In order to prevent that the lifter pin 15 that is arranged on the carrying mechanism in this film formation device or the Etaching device from producing damaged, and need to force at short notice to carry out miscellaneous replacing operation of this lifter pin 15 and sleeve 13 and these parts are cleaned, therefore, become the bigger main cause of maintenance activity burden.
Wherein, disclosing in patent documentation 1 has a kind ofly by making the lower end that is fixed on the sleeve in the pin insertion hole outstanding below mounting table, suppresses to handle gas and immerses carrying mechanism in the above-mentioned gap, but can not fully address the above problem.
In addition, as other problems, in the film formation device that carries out CVD, before existing after in the clean processing vessel, moving into wafer, when atmosphere in this container handling is handled near film forming, each of each wafer is handled uniformly, and for example with above-mentioned TiCl
4Film forming gas such as gas are supplied in the container handling, pre-coated mounting surface 12.In this case, shown in the arrow of Figure 11 (a), TiCl
4Gas enters in the sleeve 13 from the top of mounting table 11, shown in Figure 11 (b), forms sediment 19 near the front end of the lifter pin 15 that is positioned at initial position.Then, when lifter pin 15 is risen, shown in Figure 11 (c), sediment 19 is peeled off from sleeve 13 and lifter pin 15, along the inwall of sleeve 13 push and mounting on mounting surface 12, at this moment, if lifter pin 15 descends under the state that keeps wafer W, then because sediment 19 becomes the main cause of particle contamination attached to above-mentioned chip back surface as particle.
[patent documentation 1] TOHKEMY 2004-343032 number public utmost point.
Summary of the invention
The present invention proposes in order to address the above problem, its purpose is to provide a kind of substrate placing mechanism, can suppress the pin inserting hole of reaction product savings on being arranged at the mounting table of substrate placing mechanism that produce along with the supply of handling gas with by lifting in this pin-and-hole relative mounting table carry out in the gap between the lifter pin of substrate exchange.
A kind of substrate placing mechanism of the present invention is characterized in that, comprising: be arranged in the container handling that is formed with the processing atmosphere that is caused by processing gas the mounting table of the processed substrate of mounting; Insert respectively in the pin inserting hole that is arranged on this mounting table, the relative mounting table of action is carried out a plurality of lifter pins that substrate exchange is used by haunting; And the lifting body that supports these lifter pins, this substrate placing mechanism can utilize elevating mechanism and make the lifter pin lifting by lifting body, wherein, also comprises: the peristome in the lower end of above-mentioned pin inserting hole, the outstanding to the inside in the form of a ring cyclic lug that forms; Be formed on the above-mentioned lifter pin, when this lifter pin descends, be bearing on the cyclic lug and clog the wide diameter portion of above-mentioned peristome.
A top side of above-mentioned cyclic lug, for example for guide wide diameter portion and make lifter pin be positioned at the pin inserting hole central authorities and to the inside the below tilt, in addition, the following side of above-mentioned wide diameter portion for example tilts towards interior side-lower.And in above-mentioned lifter pin, the diameter that forms part outstanding when supporting substrates is littler than wide diameter portion.When lifter pin tilts in the pin inserting hole, by suppressing, and this minor diameter part is not contacted with the inner peripheral surface of pin inserting hole by wide diameter portion.
In addition, for example if with described wide diameter portion as first wide diameter portion, then at the upper side of this wide diameter portion, and when lifter pin was positioned at the lifting position of accepting substrate, the part that is arranged in the pin inserting hole was provided with second wide diameter portion.Above-mentioned lifter pin separates setting with lifting body, utilizes the deadweight of lifter pin, and wide diameter portion is bearing on the cyclic lug.
A kind of substrate board treatment of the present invention is characterized in that, comprising: container handling; Be arranged on the aforesaid substrate carrying mechanism in the container handling; And will be supplied to processing gas supply part in the container handling to the processing gas that processed substrate is handled.
Substrate placing mechanism of the present invention, the lower ending opening portion of the pin inserting hole that forms on mounting table is formed with cyclic lug, and when lifter pin descended, the wide diameter portion that forms on it was bearing on the cyclic lug, and clogged above-mentioned peristome.Therefore, the processing gas that enters around below the mounting table of mounting substrate is difficult to invade from the lower end of pin inserting hole, can the inhibitory reaction product be deposited in the gap between lifter pin and the pin inserting hole.Therefore, suppress the obstruction that the lifting to lifter pin produces, its result can reduce the frequency of maintenance activities such as the cleaning of the part of lifter pin and pin inserting hole being carried out in order to ensure the normal action of lifter pin and replacing.
In addition, if it is thinner than the wide diameter portion of lifter pin that upper side is formed, in wide diameter portion, keep the vertical position of lifter pin as far as possible, then in the minor diameter part of upper side, because lifter pin and the pin inserting hole does not rub or friction level is little, and can suppress to be pressed on the mounting surface of mounting table, thereby can become particle and pollute substrate by the inhibitory reaction product attached to the reaction product of pin inserting hole.
Description of drawings
Fig. 1 is the structure chart of all structures that expression is provided with the film formation device of carrying mechanism of the present invention.
Fig. 2 is the sectional view of expression carrying mechanism of the present invention.
Fig. 3 is the perspective view of above-mentioned sleeve and lifter pin.
Fig. 4 is the key diagram that is used to represent each size of above-mentioned sleeve and lifter pin.
Fig. 5 is to be the process chart that the above-mentioned lifter pin of expression receives the style of wafer.
Fig. 6 is the key diagram of another structure of expression lifter pin.
Fig. 7 is the key diagram that is used to represent each size of above-mentioned lifter pin.
Fig. 8 is the sectional view of expression another carrying mechanism of the present invention.
Fig. 9 is the key diagram of style that is illustrated in the substrate placing mechanism exchange substrate of prior art.
Figure 10 is illustrated in the key diagram that forms sedimentary style in the gap of the sleeve of substrate placing mechanism of prior art and lifter pin.
Figure 11 represents when above-mentioned lifter pin rises the key diagram of the style of sediment on the mounting table of carrying mechanism.
Symbol description:
The 2-film formation device; The 41-platform; The 41a-mounting surface; The 51-sleeve; 52-sells inserting hole; The 53-peristome; The 56-cyclic lug; The 61-lifter pin; The 62-wide diameter portion; 64 pin pedestals.
Embodiment
Describe substrate placing mechanism of the present invention being assembled in the real mode of utilizing plasma CVD to carry out in the film formation device 2 that film forming uses.It is the container handling 20 that large diameter cylindrical portion 20a and its downside are connected with the cylindrical portion 20b of minor diameter that this film formation device 2 has upside, this container handling 20 for example constitutes as vacuum chamber made of aluminum, is provided with the unshowned heating arrangements of figure that is used to heat its inwall.One end of blast pipe 21 is connected with the bottom of container handling 20, is connected with the other end of this blast pipe 21 as the vacuum pump 22 of vacuum pumping hardware.In addition, on the sidewall of the large diameter cylindrical portion 20a of container handling 20, offer the conveyance mouth 24 of the wafer W of utilizing gate valve 23 freely openables.
Courtyard portion at container handling 20 is formed with peristome 25, is provided with gas spray head 3 in the mode that clogs this peristome 25, makes it relative with the platform 41 that forms the aftermentioned mounting table.Gas spray head 3 double as upper electrodes use, and are connected with high frequency electric source portion 32 by adaptation 31.Below gas spray head 3, for example on its all lower surface, be rectangular a plurality of gas discharge outlet 33A, the 33B of offering respectively at certain intervals.In addition, be provided with spaced-apart gas flow path 34A and 34B in the inside of gas spray head 3, gas flow path 34A is communicated with gas discharge outlet 33A, and gas flow path 34B is communicated with gas discharge outlet 33B.
In addition, gas supply pipe 35A, 35B are connected with gas spray head 3, and the end of gas supply pipe 35A is connected with above-mentioned gas stream 34A, and the end of gas supply pipe 35B is connected with gas flow path 34B.The other end of these gas supply pipes 35A, 35B for example by the gas supply equipment group 36 that is assembled with valve or mass flow controller etc. respectively with store as the TiCl that handles gas
4 Gas supply source 37A, store same as the NH that handles gas
3The gas supply source 37B of (ammonia) connects.Then, when wafer W being positioned on the platform 41, respectively from gas supply source 37A, 37B to gas supply pipe 35A, 35B supply gas.The mass flow controller that these gas utilizations are contained in gas supply equipment group 36 and be controlled to the regulation flow, by gas discharge outlet 33A, 33B, diffusion in the processing space 26 on the wafer W of mounting on platform 41, mutually mixing and be supplied to wafer W in this processings space 26.Wherein, gas spray head 3 utilizes the insulating element 38 that is installed on its periphery and insulate with respect to container handling 20.
Then, with reference to Fig. 2～Fig. 3, the structure of the carrying mechanism of platform (mounting table) 41 peripheries that constitute major part of the present invention is described.Platform 41 for example forms circle, be supported in the bottom of cylindrical portion 20b of the minor diameter of container handling 20 by support unit 42, be configured to be positioned at the central portion of the large diameter cylindrical portion 20a of container handling 20, make the wafer W maintenance level that is positioned on this mounting surface 41a of 41.43 representatives is to bury heater in the mounting surface 41 that is arranged on platform 41, that become the register of the wafer W on the platform 41 among the figure, and 44 representatives is the electrostatic chuck that is used to adsorb the wafer W on the mounting surface 41a among the figure.This 41 ground connection except the effect of the mounting table that plays the mounting wafer W, is also played the effect as lower electrode.Wherein, in Fig. 1, wiring diagram only is used for illustrating briefly, and actual appearing on the stage 41 is electrically connected with container handling 20.
For example on the circumferencial direction of platform 41, on vertical direction, be formed with three through holes 40 respectively at certain intervals, in this through hole 40, be provided with the sleeve cylindraceous 51 that for example constitutes by materials such as aluminium oxide.Wherein, 52 representatives is pin inserting hole as the hole of sleeve 51 among the figure, and 53 representatives is the peristome of the lower end side of sleeve 51 among the figure.Be formed with flange part 51a in the upper end of sleeve 51, in the hole enlargement zone (recess) of the upper side by this flange part 51a being embedded into above-mentioned through hole 40, sleeve 51 can be embedded in the platform 41, be positioned at above the flange part 51a with the roughly the same height of the mounting surface 41a of platform 41 on.
On the lower, outer perimeter of sleeve 51, cut out screw thread.By two nuts 54,54 are screwed on the sleeve 51, tighten with the following side of platform 41, and sleeve 51 can be fixed on the platform 41.In this embodiment, the length of this sleeve 51 forms bigger than the thickness of platform 41, and the lower end of sleeve 51 is outstanding to the below of platform 41.By such formation sleeve 51, when the processing gas around the below of platform 41 is invaded under the situation of selling in the inserting hole 52 from peristome 53, owing to the processing gas that can suppress to enter arrives top one side of selling in the inserting hole 52, the sediment of therefore handling the gas generation is difficult to attached to the top of pin inserting hole 52 and the front end of lifter pin described later 61.
In the peristome 53 of the lower end side of sleeve 51, be provided with according to towards the mode of inboard, with the outstanding cyclic lug 56 that forms of ring-type.For the face of the upside of this cyclic lug 56, when lifter pin 61 descends, contact with this lifter pin 61, form its bearing-surface 57 of supporting, form towards interior side-lower inclination.
Then, lifter pin 61 is described.As shown in Figure 3, lifter pin 61 is inserted in the pin inserting hole 52 of sleeve 51 from top one side of each sleeve 51, and as described later, forming can lifting in this sells inserting hole 52.This lifter pin 61 for example is made of materials such as aluminium oxide.Central authorities at lifter pin 61 are provided with wide diameter portion 62, and for example along with downwards and diameter dwindles at leisure, in other words, the below tilts the step difference face 63 that moves to the path part from the bottom (being wide diameter portion 62) of this wide diameter portion 62 to the inside.When pin pedestal 64 when lifter pin 61 leaves, the step difference face 63 of this inclination contacts with 57 of bearing-surfaces, thereby clogs the peristome 53 of sleeve 51 lower end side, can suppress gas and flow in the pin inserting hole 52 of sleeve 51 from this peristome 53.Wherein, in the following description, claim that this moment, the position of lifter pin 61 was initial position (down position).
In addition, the upper side part at the wide diameter portion 62 of this lifter pin 61 is formed with the minor diameter part 60 littler than the diameter of wide diameter portion 62.For the axial length of wide diameter portion 62, be set when being in from the mounting surface 41a of platform 41 position outstanding and that wafer W is exchanged when lifter pin 61, not from the outstanding size of mounting surface 41a.This is in order to prevent because of the inwall of the wide diameter portion 62 friction sleeves 51 of lifter pin 61 will be by being pushed on the mounting surface 41a on the deposit that produces attached to the film forming gas on the inwall, cause sediment as particle and attached to mounting on the wafer W on the mounting surface 41a.
In addition, the gap length of the inner peripheral surface of the outer peripheral face of wide diameter portion 62 and sleeve 51, must be the size of lifter pin 61 lifting successfully, if it is excessive, the lifting action instability of lifter pin 61 then, the inclination of lifter pin 61 becomes big as described as follows, cause minor diameter part 60 to contact with the inner peripheral surface of sleeve 51, in addition, when film forming gas when the below is invaded, enter to upside easily, need therefore to consider that these decide.
Like this, wide diameter portion 62 not only plays the effect that film forming gas invades the top that suppresses, and, in this embodiment, because the gap of wide diameter portion 62 and sleeve 51 is little, so when lifter pin 61 tilts, wide diameter portion 62 contacts with the inner peripheral surface of sleeve 51 itself, can suppress its inclination, therefore, play the effect that do not contact of minor diameter part 60 that makes its top with the inner peripheral surface of sleeve 51.That is, because the gap of wide diameter portion 62 and sleeve 51 is little, so when lifter pin 61 tilted, the contact point of lifter pin 61 and sleeve 51 became the outer peripheral face of wide diameter portion 62, the minor diameter part 60 on it does not contact.Therefore, needn't worry to be pushed on the mounting surface 41a on the sediment (attachment) because of the inwall of minor diameter part 60 friction sleeves 51.
Now enumerate an example of the size at each position, as shown in Figure 4, the bore d of sleeve 51 is 4mm, and the length L of wide diameter portion 62 and external diameter R1 are respectively 20mm and 3.6mm, and the external diameter r1 of minor diameter part 60 is 2mm.
Be positioned at lifter pin on the initial position below a side, for example separate certain intervals and be provided with the pin pedestal 64 that is used for pushing away lifter pin 61 with lifter pin 61, the lifting arm 65 that supports this pin pedestal 64 is connected with bottom of each pin pedestal 64.In this embodiment, constitute lifting body by pin pedestal 64 and lifting arm 65.66 expressions is drive rod among the figure, and the one end is connected with above-mentioned lifting arm 65, and its other end for example extends to the outside of container handling 20 by the unshowned bearing of figure portion on the bottom surface of cylindrical portion 20a, is connected with elevating mechanism 67.68 expressions is the bubble-tight bellows that is used to guarantee drive rod 66 and container handling 20 among the figure.Elevating mechanism 67 rises lifting arm 65 by drive rod 66, by the rising of this lifting arm 65, pin pedestal 64 is risen in vertical direction.Pin pedestal 64 that rises and the following end in contact that is positioned at the lifter pin 61 of initial position further rise lifter pin 61 by pushing away lifter pin 61 in vertical direction, make its leading section outstanding from mounting surface 41a.
Then, a series of actions of being undertaken by this film formation device 2 is described.At first, open gate valve 23, utilization is schemed unshowned transport mechanism and will be moved into to container handling 20 as the wafer W of processed substrate by conveyance mouth 24.When the wafer W conveyance to the central portion of platform 41 time, is utilized elevating mechanism 67 and by drive rod 66 and lifting arm 65, pin pedestal 64 risen.
What Fig. 5 (a) represented is the lifter pin 61 that is positioned at initial position, when pin pedestal 64 rises, with the following end in contact of lifter pin 61, pushes away lifter pin 61 and make it outstanding from mounting surface 41a on vertical direction.Shown in Fig. 5 (b), when the back side of the front end supporting wafer W of lifter pin 61, stop to rise by making pin pedestal 64, and can stop the rising of lifter pin 61.The lifter pin 61 that loses upward to active force tilts, and as shown in the drawing, the upper end of wide diameter portion 62 contacts with the inwall of sleeve 51.Wherein, lifter pin 61 and transport mechanism mutually noninterfere in the plane.
Then, when pin pedestal 64 descended, lifter pin 61 descended maintaining under the state of wafer W, in the time of in entering sleeve 51, with the wafer W mounting on mounting surface 41a.And, when the decline that is accompanied by pin pedestal 64 and lifter pin 61 when descending, the step difference face 63 of the lower end of wide diameter portion 62 contacts with the bearing-surface 57 of the ring-shaped protrusion 56 of sleeve, the step difference face 63 of wide diameter portion 62 is by bearing-surface 57 guiding, and by the deadweight of lifter pin 61 and landing, being supported face 57 surrounds, in other words, chimeric being bearing in the slide mass part (tube portion), the axle Q1 of the axle P1 of lifter pin 61 and sleeve 51 is consistent state (referring to the Fig. 5 (a) before lifter pin 61 risings), that is, be positioned at lifter pin 61 under the state at center of sleeve 51, lifter pin 61 is supported by the cyclic lug 56 of sleeve 51.At this moment, pin pedestal 64 is positioned at the below of lifter pin 61.
On the other hand,, then follow, handle gas and export processing space 26 to from gas discharge outlet 33A, 33B if transport mechanism is kept out of the way and closing gate valve in container handling 20.Carry out the supply of gas like this, on the other hand, utilize in 22 pairs of container handlings 20 of vacuum pump and carry out vacuum exhaust, the feasible pressure that is set at regulation, in addition, the inwall with heater 43 and container handling 20 is heated to design temperature respectively.Then, by High frequency power being supplied between the gas spray head 3 and platform 41 as upper electrode, make TiCl as lower electrode from high frequency electric source portion 32
4And NH
3Gas becomes plasma, and TiN is deposited on the wafer W, forms film.
If carry out the processing of stipulated time, then stop the supply of High frequency power and the supply of all gases, then, according to the opposite order of above-mentioned conveyance action, utilize lifter pin 61 and transport mechanism to carry out the conveyance action, wafer W is taken out of in container handling 20.
The carrying mechanism 2 of the wafer W of present embodiment, be formed with cyclic lug 56 on the peristome 53 of the lower end of set sleeve 51 in the through hole on being formed at platform 41, when lifter pin 61 descends, the wide diameter portion 62 of Xing Chenging is supported by cyclic lug 56 thereon, thereby clogs above-mentioned peristome 53.Therefore, there is the processing gas that enters around the lower side of platform 41 of wafer W to be difficult to invade in mounting, can suppresses by handling in the gap of deposit savings between lifter pin 61 and sleeve 51 that gas generates from the lower end of sleeve 51.Therefore, can suppress the obstruction to lifter pin 61 liftings, the result can reduce the frequency that carries out of maintenance activities such as the cleaning of the lifter pin 61 that carries out in order to ensure lifter pin 61 regular events and sleeve 51 or replacing.
In addition, when lifter pin 61 was back to initial position, wide diameter portion 62 was restricted to plumbness by the inclined plane guiding of cyclic lug 56 with the posture of lifter pin 61, makes each central shaft of lifter pin 61 and sleeve 51 become consistent state.In this embodiment, when the lifter pin 61 that is in initial position is tilted, because contacting of wide diameter portion 62 and sleeve 51, make minor diameter part not contact with sleeve 51, so, when lifter pin 61 rises, the minor diameter part 60 of its upper side does not contact with sleeve 51, even but do not make such size and set since lifter pin 61 with vertical position by on push away, upper side at wide diameter portion 62 is a minor diameter part, so when rising, the top of lifter pin 61 does not contact with sleeve 51, and, also be difficult to contact with the inwall of sleeve 51 for wide diameter portion 62.Therefore, can suppress attached to the sediment on the inwall of sleeve 51 be stripped from by lifter pin 61 and on push away, mounting is on mounting surface 41a.As a result, can suppress that this sediment becomes particle and the situation of polluting wafer W.
Wherein, in the above-described embodiment, though lifter pin 61 and pin pedestal 64 leave, but, when lifter pin 61 is positioned at initial position, as long as can clog above-mentioned peristome 53, then because obtain effect of the present invention, lifter pin 61 is connected with pin pedestal 64, utilizes pin pedestal 64 vertically to support lifter pin 61 simultaneously, this structure is also contained in the scope of claim of the present invention.
Lifter pin is not the shape that only limits to above-mentioned execution mode, can be shape as shown in Figure 6 yet.For lifter pin shown in Figure 6 71, portion's devices spaced apart is disposed with first wide diameter portion 72 and second wide diameter portion 73 towards front end in the central.In this lifter pin 71, between the upside of second wide diameter portion 73 and first wide diameter portion 72 and second wide diameter portion 73, be formed with diameter minor diameter part 70a, the 70b littler respectively than each wide diameter portion.Identical with the lower end of the wide diameter portion 62 of above-mentioned lifter pin 61, be formed with the step difference face 74 of inclination in the lower end of first wide diameter portion 72, shown in Fig. 6 (a), when lifter pin 71 is positioned at initial position, this step difference face 74 is by cyclic lug 56 supportings of sleeve 51, identical with above-mentioned example, lifter pin 71 stops up the peristome 53 of sleeve 51 with vertical position.
Then, shown in Fig. 6 (b), set each size, make when the time,,, make that the minor diameter part 70a above it does not contact with the inwall of sleeve 51 because second wide diameter portion 73 contacts with the inwall of sleeve 51 even lifter pin 71 tilts at initial position.In addition, shown in Fig. 6 (c), constitute on the utilization pin pedestal 64 and push away lifter pin 71, when the leading section of lifter pin 71 was given prominence on mounting surface 41a, second wide diameter portion 73 was stayed in the sleeve 51.
An example of size of representing the each several part of this lifter pin 71: in Fig. 7, being 6mm with the length of first wide diameter portions 72 of 11 expressions, is 6mm with the length of second wide diameter portions 73 of 12 expressions.In addition, the length with the minor diameter part 70b that is clamped by wide diameter portion 72 and wide diameter portion 73 of 13 expressions is 7.4mm.The diameter r2 of above-mentioned minor diameter part 70a, 70b is 2mm, and the diameter R2 of each wide diameter portion is 3.6mm.Wherein, the internal diameter of sleeve 51 is identical with the example of prior art.
When the sedimentary gas of common generation entered in the gap of solid and solid, the sediment of this gas has to be concentrated attached to the tendency on certain position in this gap.Constituting like this under the situation of lifter pin 71, when this lifter pin 71 is positioned at initial position, above-mentioned TiCl
4Leak from peristome 53 and flow in the pin inserting holes 52 Deng handling gas, this handle gas from the interstitial diffusion of wide diameter portion 72 and sleeve 51 to the broad space between wide diameter portion 72 and the wide diameter portion 73.As a result, owing to can suppress to be generated in the concentrated gap attached to wide diameter portion 72 and sleeve 51 of sediment by above-mentioned processing gas, hinder the lifting of lifter pin 71, therefore, the replacing frequency that can suppress lifter pin 71 and sleeve 51 shortens.
And, as shown in Figure 8, also can constitute the structure of directly inserting lifter pin in the through hole 40 on being formed at platform (mounting table) 41.Specifically, in the peristome 80 of the lower end side of the through hole 40 of platform 41, be provided with according to towards the mode of inboard with the outstanding cyclic lug 81 that forms of ring-type.When lifter pin 8 described later descended, the face of the upside of this cyclic lug 81 contacted with this lifter pin 8, forms the bearing-surface 82 that supports it, and direction tilts to the inside.
As shown in Figure 8, insert the lifter pin 8 in the through hole 40, be provided with a wide diameter portion 8a identical with execution mode shown in Figure 6 at middle body.That is, the upside of this wide diameter portion 8a forms as the minor diameter part 8b littler than the diameter of this wide diameter portion 8a.In addition, at the lower end identical tilting table jump face 83 of the lower end of wide diameter portion 8a formation with the wide diameter portion 61a of above-mentioned lifter pin 61.Shown in Fig. 8 (a), when lifter pin 8 was positioned at initial position, this step difference face 83 was supported by the cyclic lug 81 of platform 41, and identical with above-mentioned example, lifter pin 8 clogs the peristome 80 of platform 41 with vertical position.
In addition, shown in Fig. 8 (b), when lifter pin 8 is raised by pin pedestal 64, and the leading section of lifter pin 8 is on mounting surface 41a when outstanding, and above-mentioned wide diameter portion 8a stays in the platform 41.
In above-mentioned example, because lifter pin 8 directly inserts in the through hole 40 of platform 41, as mentioned above, compare with the situation that is provided with sleeve 51, can shorten the total length in the hole of inserting lifter pin.Therefore, clean air is being supplied in the film formation device 2, in the processing that this film formation device 2 is cleaned, clean air can be easy to arrive the lower side of the through hole 40 of platform 41, has the advantage of removing easily attached to the sediment (deposit) of through hole 40 lower side.
In addition, because it is few to constitute the part number of carrying mechanism, therefore can shortens the activity duration of Assembly part, thereby can reduce cost.
Claims (7)
1. a substrate placing mechanism is characterized in that,
Comprise: be arranged in the container handling that is formed with the processing atmosphere that causes by processing gas, the processed substrate of mounting, and have the mounting table of a plurality of pin inserting holes; Insert in each of described a plurality of pin inserting holes a plurality of lifter pins that can lifting with respect to each of this a plurality of pin inserting holes; Support the lifting body of described a plurality of lifter pins; With by described lifting body, make the elevating mechanism of described a plurality of lifter pin liftings,
At each peristome bottom of described a plurality of pin inserting holes, be formed with outstanding to the inside in the form of a ring cyclic lug,
On each of described a plurality of lifter pins, be formed with the wide diameter portion that when this lifter pin descends, is bearing on the described cyclic lug and clogs described peristome,
The described processed substrate of mounting and when described processed substrate handled on described mounting table by described processed substrate, described cyclic lug and described wide diameter portion, stops up the whole gaps between pin inserting hole and the lifter pin.
2. substrate placing mechanism as claimed in claim 1 is characterized in that:
The upper face side of described cyclic lug is in order to guide wide diameter portion and to make lifter pin be positioned at the central authorities of pin inserting hole and tilt towards side-lower.
3. substrate placing mechanism as claimed in claim 2 is characterized in that:
Side-lower tilted in the following side direction of described wide diameter portion.
4. as each described substrate placing mechanism in the claim 1～3, it is characterized in that:
In described lifter pin, the diameter that forms part outstanding when supporting substrates is littler than wide diameter portion.
5. as each described substrate placing mechanism in the claim 1～3, it is characterized in that:
If as first wide diameter portion, then at the upper side of this wide diameter portion, and when lifter pin was positioned at the lifting position of accepting substrate, the part that is arranged in the pin inserting hole was provided with second wide diameter portion with described wide diameter portion.
6. as each described substrate placing mechanism in the claim 1～3, it is characterized in that:
Described lifter pin is configured to separate with lifting body, utilizes the deadweight of lifter pin, and wide diameter portion is bearing on the cyclic lug.
7. a substrate board treatment is characterized in that, comprising:
Container handling; Be arranged on each described substrate placing mechanism in the claim 1～3 in the container handling; And will be supplied to processing gas supply part in the container handling to the processing gas that processed substrate is handled.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005288295 | 2005-09-30 | ||
| JP2005288295 | 2005-09-30 | ||
| JP2006095167 | 2006-03-30 |
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| Publication Number | Publication Date |
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| CN1941318A CN1941318A (en) | 2007-04-04 |
| CN100440476C true CN100440476C (en) | 2008-12-03 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101289620A Expired - Fee Related CN100440476C (en) | 2005-09-30 | 2006-09-05 | Substrate placing mechanism and substrate processing device |
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| CN (1) | CN100440476C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107078090A (en) * | 2014-10-03 | 2017-08-18 | 应用材料公司 | Spring loaded pin for base assembly and the processing method using the spring loaded pin |
| USD980884S1 (en) | 2021-03-02 | 2023-03-14 | Applied Materials, Inc. | Lift pin |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9728429B2 (en) | 2010-07-27 | 2017-08-08 | Lam Research Corporation | Parasitic plasma prevention in plasma processing chambers |
| CN103515280B (en) * | 2012-06-18 | 2016-04-27 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Push pin device, bottom electrode assembly and installation and removal method thereof |
| CN102820250B (en) * | 2012-08-14 | 2015-04-22 | 沈阳拓荆科技有限公司 | Sectional pin for semiconductor coating equipment |
| CN104465453B (en) * | 2013-09-20 | 2018-10-30 | 住友电气工业株式会社 | The wafer heater of plasma CVD equipment |
| KR102215641B1 (en) * | 2013-12-18 | 2021-02-16 | 주성엔지니어링(주) | Lift pin assembly and substrate processing apparatus having the same |
| CN104752303A (en) * | 2013-12-31 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Lifting device, reaction chamber and plasma processing device |
| CN105093588B (en) * | 2015-08-24 | 2018-05-08 | 京东方科技集团股份有限公司 | A kind of supporting pin and absorption board |
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| JP2004343032A (en) * | 2003-04-21 | 2004-12-02 | Tokyo Electron Ltd | Lifting mechanism of workpiece and processor of same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107078090A (en) * | 2014-10-03 | 2017-08-18 | 应用材料公司 | Spring loaded pin for base assembly and the processing method using the spring loaded pin |
| CN107078090B (en) * | 2014-10-03 | 2020-06-05 | 应用材料公司 | Spring loaded pin for a base assembly and process using the same |
| USD980884S1 (en) | 2021-03-02 | 2023-03-14 | Applied Materials, Inc. | Lift pin |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1941318A (en) | 2007-04-04 |
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