CN100437117C - Composite beam piezoresistive accelerometer - Google Patents
Composite beam piezoresistive accelerometer Download PDFInfo
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- CN100437117C CN100437117C CNB2007100617393A CN200710061739A CN100437117C CN 100437117 C CN100437117 C CN 100437117C CN B2007100617393 A CNB2007100617393 A CN B2007100617393A CN 200710061739 A CN200710061739 A CN 200710061739A CN 100437117 C CN100437117 C CN 100437117C
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Abstract
This invention relates to a composite beam pressure drag accelerometer; belong to micro machine electronic technology. This invention solves existing problem of that structure of high g accelerometer can not satisfy characteristic request of first order's high inherent rate, wide frequency response scope and worse shock resistance. this accelerometer includes silica-based support carriage shell, spring beam, quality piece that through spring beam overhung in middle of carriage shell, varistor diffused on tip of spring beam. Silica-based support carriage shell undersurface by electrostatic link glass bottom cap. Quality piece is composed by frame body and quality core that through bridge hooked to frame body.
Description
Technical field
The present invention relates to the micromechanics electronic technology, specifically is a kind of composite beam piezoresistive accelerometer.
Background technology
Accelerometer is widely used in the vibration and the shock measurement of aviation, electronics, automobile and mechanical field.Along with the rise of micro electronmechanical MEMS industry, accelerometer is gradually to microminiaturized, integrated direction development.Because therefore advantages such as micro-acceleration gauge has that volume is little, light weight, cost are low, low in energy consumption, easy batch process have military and civilian prospect widely.Wherein piezoresistive accelerometer is widely used in the acceleration analysis of shock environment owing to having advantages such as the linearity is good, peripheral circuit is simple, anti-overload ability is strong.And based on the measurement demand of different shock environments, the accelerometer with high g values in the piezoresistive accelerometer is subjected to paying close attention to widely especially.
The structure of existing accelerometer with high g values has structures such as cantilever beam structure, fixed beam structure and twin island and five beam: the advantage of cantilever beam structure is highly sensitive, but its first natural frequency is low, and frequency response range is narrow, and its cross sensitivity is bigger; Fixed beam structure, mass moves up and down as piston, its first natural frequency is high more a lot of than cantilever beam structure, help enlarging the frequency response range of accelerometer, can eliminate simultaneously the influence of the transverse acceleration of the beam length direction that unsymmetric structure causes preferably, but under the situation that strain resistor quantity is identical in electric bridge, its sensitivity is lower than cantilever beam structure; The twin island and five beam structure, the voltage dependent resistor (VDR) of four detection usefulness is diffused on the center sill, two are parallel to two on beam perpendicular to beam, be connected to form Wheatstone bridge, this structure has the characteristics identical with fixed beam structure, cross sensitivity is lower, and frequency response characteristic is between cantilever beam structure and fixed beam structure.In a word, the structure of existing accelerometer with high g values can not satisfy first natural frequency height, the wide characteristic of frequency response range; In addition, shock resistance is relatively poor, can occur the phenomenon of beam fracture under many mal-conditions, thereby accelerometer was lost efficacy.
Summary of the invention
The present invention can not satisfy first natural frequency height, the wide characteristic requirement of frequency response range for the structure that solves existing high g accelerometer, and the relatively poor problem of shock resistance has proposed a kind of composite beam piezoresistive accelerometer simultaneously.
The present invention adopts following technical scheme to realize: composite beam piezoresistive accelerometer, comprise silica-based support frame, elastic beam, prop up the mass that is suspended from the middle of the silica-based support frame by elastic beam, the end of elastic beam (zone of stress maximum and linear change) diffusion has voltage dependent resistor (VDR), silica-based support frame bottom surface has the glass bottom by electrostatic bonding technology bonding, and mass is made of framework and the quality pellet that is fixed in the framework by tie-beam.
When mass be subjected to Z to acceleration do the time spent, mass is stressed to cause elastic beam flexural deformation, voltage dependent resistor (VDR) produces strain on the elastic beam, the voltage dependent resistor (VDR) resistance is changed, by the Wheatstone bridge output signal that voltage dependent resistor (VDR) connects and composes, signal is treated detect Z to accekeration, this process is consistent with the principle of existing piezoresistive accelerometer, and in this simultaneously, also be subjected to displacement tie-beam generation deformation between the framework of mass of the present invention and the quality pellet.Therefore when mass was subjected to high g inertial force and impacts, the framework of mass can play buffer action, makes the displacement of mass integral body less, and the inertial force that can bear is bigger, and anti-overload ability is improved, and avoids occurring under mal-condition the phenomenon that beam ruptures; The first natural frequency of this structure is higher simultaneously, the frequency response range broad.
Through the finite element ANSYS analysis:
Through data relatively, higher from the frequency of frequency accelerometer of the present invention, frequency response is better, and frequency response range is wide; And load same power, the maximum equivalent displacement of accelerometer of the present invention is less, and promptly it can bear higher g value under the same terms, realizes the function of anti high overload.
Compared with prior art, the present invention adopts the mass block structure that has framework, loading under the identical inertial force effect, the framework of mass plays the effect of buffering, make the whole displacement of mass of this structure littler, make it can bear higher g value, and have first natural frequency height, the wide advantage of frequency response range.The present invention adopts silicon-based substrate, carry out anisotropic etch by the wet corrosion KOH mordant of sending out at (100) crystal face, by etching time control corrosion depth, adopt the convex corner compensation technology simultaneously, obtain being fixed in the mass that the quality pellet in the framework constitutes by framework with by tie-beam; And adopt the ICP etching to obtain girder construction.The process technology that it adopted is all existing known technology, and those skilled in the art can realize the structure of accelerometer of the present invention by existing known process technology.
The present invention is rational in infrastructure, can satisfy first natural frequency height, the wide characteristic requirement of frequency response range, and have high anti-overload ability.
Description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is the A-A sectional view of Fig. 1;
The concrete Wheatstone bridge schematic diagram that Fig. 3 connects and composes for voltage dependent resistor (VDR) of the present invention;
Among the figure: the silica-based support frame of 1-; The 2-elastic beam; The 3-voltage dependent resistor (VDR); 4-glass bottom; The 5-framework; The 6-tie-beam; 7-quality pellet.
Embodiment
Composite beam piezoresistive accelerometer, comprise silica-based support frame 1, elastic beam 2, be suspended from mass in the middle of the silica-based support frame 1 by 2 of elastic beams, the end diffusion of elastic beam 2 has voltage dependent resistor (VDR) 3, silica-based support frame 1 bottom surface has glass bottom 4 by electrostatic bonding technology bonding, and mass is made of framework 5 and the quality pellets 7 that are fixed in the framework 5 by tie-beam 6.
During concrete enforcement, consider: 1, the power supply of wheatstone bridge circuits adopts the constant pressure source power supply, and big as resistance, its power consumption is little, and temperature is not easy to raise; 2, resistance is big, and variable quantity is big, and output is big, is of value to reasons such as improving sensitivity, the end of elastic beam 2, and promptly elastic beam 2 all is provided with voltage dependent resistor (VDR) 3 with the infall of mass, silica-based support frame 1.The Wheatstone bridge that voltage dependent resistor (VDR) 3 connects and composes, according to the output signal of electric bridge finally draw Z to acceleration.
Claims (1)
1, a kind of composite beam piezoresistive accelerometer, comprise silica-based support frame (1), elastic beam (2), be suspended from mass in the middle of the silica-based support frame (1) by elastic beam (2), the end diffusion of elastic beam (2) has voltage dependent resistor (VDR) (3), silica-based support frame (1) bottom surface has glass bottom (4) by electrostatic bonding technology bonding, it is characterized in that mass is fixed in interior quality pellet (7) formation of outer framework (5) by outer framework (5) with by tie-beam (6).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2007100617393A CN100437117C (en) | 2007-04-19 | 2007-04-19 | Composite beam piezoresistive accelerometer |
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CNB2007100617393A CN100437117C (en) | 2007-04-19 | 2007-04-19 | Composite beam piezoresistive accelerometer |
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CN101034094A CN101034094A (en) | 2007-09-12 |
CN100437117C true CN100437117C (en) | 2008-11-26 |
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CNB2007100617393A Expired - Fee Related CN100437117C (en) | 2007-04-19 | 2007-04-19 | Composite beam piezoresistive accelerometer |
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Families Citing this family (13)
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---|---|---|---|---|
JP5652775B2 (en) * | 2009-05-29 | 2015-01-14 | トレックス・セミコンダクター株式会社 | Acceleration sensor element and acceleration sensor having the same |
CN102141576B (en) * | 2010-12-28 | 2012-06-06 | 中北大学 | High-gravity (g) acceleration sensor in plane of micro-electromechanical system (MEMS) based on resonance tunnelling structure (RTS) |
CN104166016B (en) * | 2013-05-16 | 2016-06-01 | 中国科学院地质与地球物理研究所 | A kind of highly sensitive 3 axis MEMS jerkmeter and manufacturing process thereof |
CN103323623B (en) * | 2013-07-02 | 2014-12-03 | 中国工程物理研究院电子工程研究所 | Three-convex-beam micromechanical accelerometer |
CN103995148B (en) * | 2014-05-15 | 2016-05-18 | 中北大学 | High g sensor in biaxial MEMS face based on micro-beam detection architecture |
CN103983807B (en) * | 2014-05-15 | 2018-06-22 | 清华大学 | Silicon micromechanical accelerometer |
CN106908624A (en) | 2017-03-24 | 2017-06-30 | 京东方科技集团股份有限公司 | A kind of acceleration sensitive device and accelerometer |
CN107917662A (en) * | 2017-12-29 | 2018-04-17 | 浙江众泰汽车制造有限公司 | Vehicle bumper block strain detection testing device |
CN109231155B (en) * | 2018-09-04 | 2020-07-07 | 北京理工大学 | Piezoresistive MEMS acceleration sensor with composite beam structure and packaging device |
CN112798821B (en) * | 2020-12-28 | 2021-10-08 | 武汉大学 | Double-shaft piezoelectric accelerometer |
CN112881755B (en) * | 2021-01-19 | 2022-06-14 | 西北工业大学 | Broadband response silicon micro-mechanical accelerometer with high vibration stability |
CN114217094B (en) * | 2021-12-14 | 2023-07-25 | 安徽大学 | MEMS high g value triaxial accelerometer |
CN117572021B (en) * | 2024-01-17 | 2024-04-05 | 中国工程物理研究院电子工程研究所 | Sensitive structure and acceleration sensor |
Citations (6)
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EP0793102A2 (en) * | 1996-02-27 | 1997-09-03 | Gec Alsthom Limited | Sensor device |
CN2570793Y (en) * | 2002-08-30 | 2003-09-03 | 中国科学院上海微系统与信息技术研究所 | Micro-mechanical acceleration transducer with measuring range up to 2million m/s power |
CN1576852A (en) * | 2003-06-25 | 2005-02-09 | 松下电工株式会社 | Semiconductor acceleration sensor and method of manufacturing the same |
US20050097958A1 (en) * | 2003-11-10 | 2005-05-12 | Naokatsu Ikegami | Accelerometer |
CN1648673A (en) * | 2005-03-25 | 2005-08-03 | 中北大学 | Single chip double inertia parameter accelerometer gyroscope |
JP2007033319A (en) * | 2005-07-28 | 2007-02-08 | Citizen Watch Co Ltd | Electromechanical transducer |
-
2007
- 2007-04-19 CN CNB2007100617393A patent/CN100437117C/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0793102A2 (en) * | 1996-02-27 | 1997-09-03 | Gec Alsthom Limited | Sensor device |
CN2570793Y (en) * | 2002-08-30 | 2003-09-03 | 中国科学院上海微系统与信息技术研究所 | Micro-mechanical acceleration transducer with measuring range up to 2million m/s power |
CN1576852A (en) * | 2003-06-25 | 2005-02-09 | 松下电工株式会社 | Semiconductor acceleration sensor and method of manufacturing the same |
US20050097958A1 (en) * | 2003-11-10 | 2005-05-12 | Naokatsu Ikegami | Accelerometer |
CN1648673A (en) * | 2005-03-25 | 2005-08-03 | 中北大学 | Single chip double inertia parameter accelerometer gyroscope |
JP2007033319A (en) * | 2005-07-28 | 2007-02-08 | Citizen Watch Co Ltd | Electromechanical transducer |
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