CN100436060C - Grinding pad and its making process - Google Patents
Grinding pad and its making process Download PDFInfo
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- CN100436060C CN100436060C CNB2004100429691A CN200410042969A CN100436060C CN 100436060 C CN100436060 C CN 100436060C CN B2004100429691 A CNB2004100429691 A CN B2004100429691A CN 200410042969 A CN200410042969 A CN 200410042969A CN 100436060 C CN100436060 C CN 100436060C
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Abstract
The present invention relates to a grinding pad and a making method thereof. The grinding pad is provided with a grinding surface, a back surface and side walls which are connected with the grinding surface and the back surface. The grinding pad is also provided with a central area and a grinding area, wherein the central area of the grinding surface is bulged under the action of stress squeeze in a grinding process, so at least one buffering stress pattern is arranged in the central area. The buffering stress pattern can buffer stress which is borne by the central area of the grinding pad in the grinding process in order to avoid the central area from being bulged under the action of stress squeeze, a wafer carrier is further prevented from being rubbed with the bulged part, and a wafer is prevented from being polluted by generated debris. In addition, at least a cambered surface is arranged on the side walls of the grinding pad, the wafer carrier is prevented from being rubbed with the side walls, and the wafer is prevented from being polluted by generated debris.
Description
Technical field
The present invention relates to a kind of grinding pad and manufacture method thereof that is used for cmp, particularly relate to a kind of grinding pad and manufacture method thereof that can prevent to produce in the process of lapping chip.
Background technology
With the technology of present planarization, (Chemical MechanicalPolishing CMP) is the technology of the normal comprehensive planarization of using (Global Planarization) now to chemical mechanical milling method.Generally speaking, in the process of cmp, it is by the lapping liquid (slurry) with suspension polishing particles (abrasive particle) and has suitable elasticity (elasticity) and the grinding pad of hardness (hardness), carries out relative motion each other to reach the purpose of planarization at crystal column surface.
See also shown in Figure 1ly, look and side view on existing known grinding pad and the wafer carrier.This wafer 100 is by a wafer carrier 102 carrying, and the mode of its carrying for example is to utilize one to cover ring 104 and wafer 100 is configured in the bottom surface of this wafer carrier 102.This wafer carrier 102 can drive wafers 100 and rotate on a grinding pad 110, and this grinding pad 110 and by a grinding table 120 controls it rotates, and between the surface of wafer 100 and grinding pad 110, provide a lapping liquid to grind processing procedure.Polishing particles in crystal column surface and the lapping liquid can contact with each other, and producing rubs makes crystal column surface produce consume, so that its surface is smooth gradually, and the relative motion that above-mentioned grinding pad 110 and crystal column surface carry out each other, except wafer 100 and grinding pad 110 rotate, also comprise the side-to-side motion of wafer.
Please continue to consult shown in Figure 1, when wafer carrier 102 drives the side-to-side motion of doing in the milling zone 112 of wafer 100 at grinding pad 110 by a small margin, but can produce the extrusion stress of past grinding pad 110 center positions to grinding pad 110, be extruded projection to cause center 114.And when proceeding to grind processing procedure on the grinding pad 110 of wafer 100 in bowing, the ring 104 that covers of wafer carrier 102 may rub with center 114 generations of grinding pad 110 upper process, and then produces chip.Because covering on the ring 104 in the general wafer carrier 102 is that design has groove 106, therefore friction and the chip that produces may enter inside via the groove 106 that covers ring 104, and contact with wafer 100, cause wafer 100 to be polluted.
In addition, because the abradant surface of grinding pad 110 and the sidewall 116 of grinding pad 110 are rectangular structure kenels, so when wafer carrier 104 drives the side-to-side motion of doing in the milling zone 112 of wafer 100 at grinding pad 110 by a small margin, the ring 104 that covers of wafer carrier 102 may rub and the generation chip with sidewall 116 generations of grinding pad 110, therefore the chip that rubs and produce may enter inside via the groove 106 that covers ring 104, and contact, and then cause wafer 100 to be polluted with wafer 100.
So know as available from the above, existing known grinding pad its in the center or the ring that covers of regular meeting of edge and wafer carrier produce friction and generation chip, and then cause wafer to be polluted.
This shows that above-mentioned existing grinding pad and manufacture method thereof obviously still have inconvenience and defective, and demand urgently further being improved in structure, manufacture method and use.In order to solve the problem that grinding pad and manufacture method thereof exist, relevant manufacturer there's no one who doesn't or isn't seeks solution painstakingly, but do not see always that for a long time suitable design finished by development, and common product does not have appropriate structure to address the above problem, and this obviously is the problem that the anxious desire of relevant dealer solves.
Because the defective that above-mentioned existing grinding pad and manufacture method thereof exist, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, and the utilization of cooperation scientific principle, actively studied innovation, in the hope of founding a kind of new grinding pad and manufacture method thereof, can improve general existing grinding pad and manufacture method thereof, make it have more practicality.Through constantly research, design, and after studying sample and improvement repeatedly, create the present invention who has practical value finally.
Summary of the invention
The objective of the invention is to, overcome the existing grinding pad of cmp and the defective that manufacture method exists thereof of being used for, and provide a kind of new grinding pad and manufacture method thereof, technical problem to be solved is to make its center that can avoid grinding pad be squeezed in the process of grinding stress and bowing, and the center that can avoid grinding pad is in the process of grinding, because of friction produces chip, thereby be suitable for practicality more.
Another object of the present invention is to, a kind of grinding pad and manufacture method thereof that is used for cmp is provided, technical problem to be solved is to make its sidewall of avoiding grinding pad in the process of grinding, and because of friction produces chip, thereby is suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of grinding pad that is used for cmp according to the present invention's proposition, this grinding pad has an abradant surface, a back side and a sidewall that is connected with this abradant surface and this back side, and this grinding pad has a milling zone and a center, milling zone is positioned at around the described center, dispose most first grooves with first degree of depth, in this center of this grinding pad is to dispose a buffering stress pattern, to be buffered in the stress that this place, center of this abradant surface is subjected in the process of lapping.The buffering stress pattern is by most second grooves with one second degree of depth or at least one opening with one second degree of depth is constituted, and described second degree of depth is greater than first degree of depth and less than half of this grinding pad gross thickness.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid grinding pad, wherein said buffering stress pattern is configured in this abradant surface.
Aforesaid grinding pad, wherein said buffering stress pattern is configured in this back side.
Aforesaid grinding pad, wherein said buffering stress pattern is configured in this abradant surface and this back side.
Aforesaid grinding pad, wherein said sidewall has more at least one cambered surface, and this cambered surface is to be adjacent to this abradant surface.
Aforesaid grinding pad have more at least one cambered surface on wherein said those second grooves or this opening and the formed sidewall of this abradant surface, and this cambered surface is to be adjacent to this abradant surface.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.A kind of manufacture method that is used for the grinding pad of cmp according to the present invention's proposition, this grinding pad has an abradant surface, a back side and a sidewall that is connected with this abradant surface and this back side, and this grinding pad has a milling zone and a center, it may further comprise the steps: this milling zone at this grinding pad forms most first grooves with first degree of depth, and form a buffering stress pattern in this center of this grinding pad, to be buffered in the stress that this place, center of this abradant surface is subjected in the process of lapping.The buffering stress pattern is by most second grooves with one second degree of depth or at least one opening with one second degree of depth is constituted, and described second degree of depth is greater than first degree of depth and less than half of this grinding pad gross thickness
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of aforesaid grinding pad, the method for this buffering stress pattern of wherein said formation comprise utilizes machinery or chemical processing procedure to form this buffering stress pattern in this center.
When the manufacture method of aforesaid grinding pad, the method for this buffering stress pattern of wherein said formation are included in molded this grinding pad, utilize mould to come molded with buffering stress pattern.
The manufacture method of aforesaid grinding pad, wherein said buffering stress pattern is formed in this abradant surface.
The manufacture method of aforesaid grinding pad, wherein said buffering stress pattern is formed in this back side.
The manufacture method of aforesaid grinding pad, wherein said buffering stress pattern is formed in this abradant surface and this back side.
The manufacture method of aforesaid grinding pad, the manufacture method of wherein said grinding pad more may further comprise the steps: form at least one cambered surface being adjacent on this side-walls at this abradant surface place, produce chip to avoid in process of lapping this side-walls to be worn.
The manufacture method of aforesaid grinding pad, the method for wherein said this cambered surface of formation comprise utilizes machinery or chemical processing procedure to form this cambered surface at this sidewall.
When the manufacture method of aforesaid grinding pad, the method for wherein said this cambered surface of formation are included in molded this grinding pad, utilize mould to come molded with this cambered surface pattern.
The manufacture method of aforesaid grinding pad, the manufacture method of wherein said grinding pad more may further comprise the steps: be adjacent to this abradant surface and this buffering stress pattern place forms at least one cambered surface.
The manufacture method of aforesaid grinding pad, the method for wherein said those cambered surfaces of formation comprise utilizes machinery or chemical processing procedure to form those cambered surfaces at this sidewall.
When the manufacture method of aforesaid grinding pad, the method for wherein said this cambered surface of formation are included in molded this grinding pad, utilize mould to come molded with this cambered surface pattern.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.A kind of grinding pad that is used for cmp according to the present invention's proposition, this grinding pad has an abradant surface, a back side and a sidewall that is connected with this abradant surface and this back side, on this sidewall, has at least one cambered surface, and this cambered surface is to be adjacent to this abradant surface, and this side-walls is worn and produces chip in process of lapping to avoid.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.A kind of manufacture method that is used for the grinding pad of cmp according to the present invention's proposition, this grinding pad has an abradant surface, a back side and a sidewall that is connected with this abradant surface and this back side, it may further comprise the steps: form at least one cambered surface being adjacent on this side-walls at this abradant surface place, produce chip to avoid in process of lapping this side-walls to be worn.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
The manufacture method of aforesaid grinding pad, the method for wherein said this cambered surface of formation comprise utilizes machinery or chemical processing procedure to form this cambered surface at this sidewall.
When the manufacture method of aforesaid grinding pad, the method for wherein said this cambered surface of formation are included in molded this grinding pad, utilize mould to come molded with this cambered surface pattern.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, in order to reach aforementioned goal of the invention, major technique of the present invention thes contents are as follows:
The present invention proposes a kind of grinding pad that is used for cmp, and it has an abradant surface, a back side and a sidewall that is connected with the abradant surface and the back side, and this grinding pad has a milling zone and a center.Wherein, can in grinding processing procedure, be squeezed stress and bowing of the center of grinding pad.Specifically, be that design has at least one buffering stress pattern in the center of this grinding pad, the stress in order to the buffering center is born in grinding processing procedure is subjected to the stress extruding and projection to avoid this center.
Based on above-mentioned purpose, the present invention more proposes a kind of manufacture method that is used for the grinding pad of cmp, and this grinding pad has an abradant surface, a back side and a sidewall that is connected with the abradant surface and the back side, and this grinding pad has a milling zone and a center.Wherein, the center of grinding pad can in grinding processing procedure, be squeezed stress and bowing, therefore the manufacture method of grinding pad promptly forms at least one buffering stress pattern at the place, center of grinding pad, the stress that the center that this buffering stress pattern can cushion grinding pad is born in grinding processing procedure is subjected to the stress extruding and projection to avoid this center.
Based on above-mentioned purpose, the present invention reintroduces a kind of grinding pad that is used for cmp, this grinding pad has an abradant surface, a back side and a sidewall that is connected with the abradant surface and the back side, it has at least one cambered surface on sidewall, and this cambered surface is to be adjacent to abradant surface, produces chip to avoid this sidewall to be worn in process of lapping.
The present invention proposes a kind of manufacture method that is used for the grinding pad of cmp in addition, this grinding pad has an abradant surface, a back side and a sidewall that is connected with the abradant surface and the back side, the manufacture method of this grinding pad mainly is to form at least one cambered surface on the sidewall of grinding pad, and this cambered surface can be avoided this sidewall to be worn in process of lapping and produce chip.
In preferred embodiment of the present invention, above-mentioned buffering stress pattern for example is all can in the abradant surface, the back side or its two sides that are configured in the center of grinding pad, and this buffering stress pattern for example is to utilize machinery or chemical processing procedure to form in the center of grinding pad, or utilizing mould with buffering stress pattern, the center at grinding pad in the process of molded abrasive pad forms.In addition, this buffering stress pattern for example is that most grooves or at least one opening constitute.
In preferred embodiment of the present invention, above-mentioned cambered surface for example is to utilize machinery or chemical processing procedure to form at the sidewall of grinding pad, or utilizes the mould with cambered surface pattern, and the sidewall at grinding pad in the process of molded abrasive pad forms.
In preferred embodiment of the present invention, more can form at least one cambered surface on the formed sidewall of above-mentioned groove or opening and abradant surface, and this cambered surface is to be adjacent to abradant surface.This cambered surface is for example to be to utilize machinery or chemical processing procedure to form on groove or opening and the formed sidewall of abradant surface equally, or utilize mould with cambered surface pattern, in the process of molded abrasive pad, on groove or opening and the formed sidewall of abradant surface, form.
Via as can be known above-mentioned, the invention relates to a kind of grinding pad and manufacture method thereof that is used for cmp, wherein this grinding pad has an abradant surface, a back side and one sidewall that connects of abradant surface and the back side therewith, and this grinding pad has center and milling zone, wherein the center of abradant surface is in and can be subjected to the stress extruding in the process of lapping and projection, thereby is that design has at least one buffering stress pattern in the center.The stress that the center that this buffering stress pattern is the available buffer grinding pad is born in grinding processing procedure can be avoided the center to be subjected to the stress extruding and projection, and then prevent wafer carrier protruding part friction therewith, and the debris contamination wafer that produces.In addition, on the sidewall of grinding pad at least one cambered surface of design, can avoid in process of lapping wafer carrier sidewall friction therewith, and the debris contamination wafer that produces.
In sum, grinding pad that the present invention is special and manufacture method thereof, the center that can avoid grinding pad in the process of grinding, be squeezed stress and bowing, and can avoid the center of grinding pad in the process of grinding, to produce chip because of friction; The present invention also can avoid the sidewall of grinding pad to produce chip because of friction in the process of grinding.It has above-mentioned many advantages and practical value, and in like product and manufacture method, do not see have similar structural design and method to publish or use and really genus innovation, no matter it all has bigger improvement on product structure, manufacture method or function, have large improvement technically, and produced handy and practical effect, and more existing grinding pad and manufacture method thereof have the multinomial effect of enhancement, thereby be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is the top view that has known grinding pad now.
Fig. 2 is the top view of a kind of grinding pad of a preferred embodiment of the present invention.
Fig. 3 A to Fig. 3 K is the profile of a kind of grinding pad of several preferred embodiments of the present invention.
100: wafer 102: wafer carrier
104: cover ring 106: groove
110: grinding pad 112: milling zone
114: center 116: sidewall
120: grinding table 200: grinding pad
202: abradant surface 204: the back side
206: milling zone 210: center
208: the first groove 212a, 212b: buffering stress pattern
214: stress direction d: grinding pad thickness
220,230: sidewall 222,232: cambered surface
The specific embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to grinding pad and its specific embodiment of manufacture method, structure, manufacture method step, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Please consult simultaneously shown in Fig. 2 and Fig. 3 A, Fig. 2 is the top view of a kind of grinding pad of a preferred embodiment of the present invention, and Fig. 3 A then is the structural representation of I-I ' section among Fig. 2.This grinding pad 200 has an abradant surface 202 and a back side 204, and grinding pad 200 generally is divided into milling zone 206 and 210 two zones, center.In this preferred embodiment, the material of this grinding pad 200 for example is a kind of foam polymer precursor, and this foam polymer precursor for example is polyurethane (PU), epoxy resin, the U.S. fat of anti-ming tree the and relevant thermosetting resin foaming body.
Include a plurality of first grooves 208 in the milling zone 206 of grinding pad 200, these a little first grooves 208 can make lapping liquid can be evenly distributed on the grinding pad 200 in grinding processing procedure.In addition, the center 210 of grinding pad 200 for example is a border circular areas homocentric with grinding pad 100, and its radius for example is 40mm.In the present invention, be that design has buffering stress pattern 212a in the center 210 of grinding pad 200, grind in the processing procedure extrusion stress in order to buffering because of past center 210 directions that oscillating motion produced of wafer, to avoid center 210 because of the extrusion stress bowing, wherein, the application of force direction of extrusion stress for example is the direction shown in the label 214.
In a preferred embodiment, buffering stress pattern 212a for example is made of an opening, and its degree of depth for example is the degree of depth greater than first groove 208, and less than 50% of grinding pad 100 thickness d.And the formation method of buffering stress pattern 212a can be to utilize mechanical processing procedure, for example be in center 210, to cut out buffering stress pattern 212a with cutter, or utilize chemical processing procedure, and for example be etched mode, in center 210, form buffering stress pattern 212a.Certainly, the formation method of buffering stress pattern 212a also can be the molded mode of utilizing, and to have the mould of buffering stress pattern, forms the buffering stress pattern 212a in the center 210 in the lump when forming grinding pad 200.
Please consult simultaneously shown in Fig. 2 and Fig. 3 B, in another preferred embodiment of the present invention, buffering stress pattern 212a is configured in the center 210 at the back side 204 of grinding pad 200, and its degree of depth for example is the degree of depth greater than first groove 208, and less than 50% of grinding pad 100 thickness d.And its formation method is same as the previously described embodiments, promptly repeats no more at this.
Please consult simultaneously shown in Fig. 2 and Fig. 3 C, in another preferred embodiment of the present invention, also can on the abradant surface 202 of grinding pad 200 and the back side 204, be formed with buffering stress pattern 212a simultaneously, and the indivedual degree of depth of the buffering stress pattern 212a on the abradant surface 202 and the back side 204 for example are the degree of depth greater than first groove 208, and total depth for example is less than 50% of grinding pad 100 thickness d.
In the above-described embodiment, buffering stress pattern on the grinding pad is to be that example explains with single patterns of openings, yet, the shape of the buffering stress pattern of the present invention and unmatchful grinding pad center is limited, the buffering stress pattern on the grinding pad of the present invention be can any procedure for processing allows pattern be present in the center of grinding pad.The patterns of openings of being formed by at least one circular open or polygonal-shaped openings etc. for example.
In the above-described embodiments, the buffering stress pattern of grinding pad is to be patterns of openings, yet in another preferred embodiment of the present invention, the buffering stress pattern of grinding pad center can also be by the formed buffering stress pattern of a plurality of grooves.
Please consult simultaneously shown in Fig. 2 and Fig. 3 D, buffering stress pattern 212b for example is made up of most second grooves, its degree of depth for example is the degree of depth greater than first groove 208, and less than 50% of grinding pad 100 thickness, and be to be configured in the center 210 of abradant surface 202, bestow the extrusion stress of center 210 in order to wafer in the absorption grinding processing procedure, to avoid center 210 because of the extrusion stress bowing.And the generation type of buffering stress pattern 212b is identical with the buffering stress pattern 212a of the foregoing description, for example be in center 210, to cut out buffering stress pattern 212b with cutter, or utilize chemical processing procedure, for example be etched mode, in center 210, form buffering stress pattern 212b.Certainly, the formation method of this buffering stress pattern 212b also can be to utilize the mould with buffering stress pattern, forms in the lump in the molding process of grinding pad 200.
See also shown in Fig. 3 E, in another preferred embodiment, the buffering stress pattern 212b of channel patterns also can be formed in the center 210 at the back side 204 of grinding pad 200, and its degree of depth for example is the degree of depth greater than first groove 208, and less than 50% of grinding pad 100 thickness d.
See also shown in Fig. 3 F, in another preferred embodiment, the buffering stress pattern 212b of channel patterns can also be in the center 210 that is formed at simultaneously on the abradant surface 202 and the back side 204, and the indivedual degree of depth of the buffering stress pattern 212b on the abradant surface 202 and the back side 204 for example are the degree of depth greater than first groove 208, and total depth for example is less than 50% of grinding pad 100 thickness d.
In addition, see also shown in Fig. 3 G and Fig. 3 H, grinding pad 200 of the present invention more can dispose the buffering stress pattern 212a and the 212b of patterns of openings and channel patterns respectively in the center 210 at the abradant surface 202 and the back side 204, and the buffering stress pattern 212a on abradant surface 202 and the back side 204 and the total depth of 212b for example are less than 50% of grinding pad 100 thickness.
And in the above-described embodiments, the distribution pattern that forms the buffering stress pattern of plough groove type can be concentric circles, whirlpool shape, trellis or radial-like streak, also can be hole (perforation) shape or the like, and the present invention is not limited its distribution pattern.
In all embodiment of the present invention, buffering stress pattern on the grinding pad, its degree of depth for example is the degree of depth greater than the shallow trench in the milling zone, and the degree of depth summation of the buffering stress pattern on the abradant surface and the back side for example is less than 50% of grinding pad thickness, so that the extrusion stress that oscillating motion caused of wafer in the processing procedure can effectively be cushioned in the center of grinding pad, be unlikely to again to cross the thin phenomenon of rupture that takes place herein because of the thickness of center.Therefore, grinding pad among the present invention is the pattern that is formed with available buffer stress in the center, these a little patterns can be buffered in and grind the stress of bestowing the grinding pad center in the processing procedure, make that the center of grinding pad can be because of not being subjected to stress extruding projection in grinding processing procedure, and then the service life of prolongation grinding pad, more can avoid wafer carrier in grinding processing procedure, to produce friction, prevent that grinding pad from polluting crystal column surface because of the chip that wearing and tearing produce with herein jut.
See also shown in Fig. 3 I, in another preferred embodiment, the sidewall 220 between the abradant surface 202 and the back side 204 of being connected in for fear of grinding pad 200, in the process of grinding, produce chip because being subjected to the friction that covers ring of wafer carrier, be to be adjacent to formation one cambered surface 222 in sidewall 220 places at abradant surface 202 places, the formation method of this cambered surface 222 can be to utilize mechanical processing procedure, for example be on the sidewall 220 that is adjacent to abradant surface 202 places, to cut out this cambered surface 222 with cutter, or utilize chemical processing procedure, for example be etched mode, on the sidewall 220 that is adjacent to abradant surface 202 places, form this cambered surface 222.Certainly, the formation method of cambered surface 222 also can be the molded mode of utilizing, and to have the mould of these cambered surface 222 identical patterns, forms the cambered surface 222 in the center 210 in the lump when forming grinding pad 200.
See also shown in Fig. 3 J, in another preferred embodiment, the sidewall 220 between the abradant surface 202 and the back side 204 of being connected in for fear of grinding pad 200, in the process of grinding, because of the friction that covers ring that is subjected to wafer carrier produces chip, be to be adjacent to formation a plurality of cambered surfaces 222 (this figure shows it with two cambered surfaces) in sidewall 220 places at abradant surface 202 places, its formation method is same as the previously described embodiments, promptly repeats no more at this.
See also shown in Fig. 3 K, it should be noted that, because after in the center 210 of grinding pad 200, forming buffering stress pattern 212a (being opening), abradant surface 202 also is the kenel at right angle with the formed sidewall 230 of buffering stress pattern 212a, it is in the process of grinding, may be subjected to the friction that covers ring of wafer carrier equally and produce chip, therefore be on the sidewall 230 that is adjacent to abradant surface 202, to form at least one cambered surface 232, and the formation method of this cambered surface 232 is identical with above-mentioned cambered surface 222, promptly repeats no more at this.In addition, this figure illustrates with at least one cambered surface of design on abradant surface 202 and the formed sidewall 230 of buffering stress pattern 212a, should know and be familiar with this skill person, the cambered surface design also can design on abradant surface 202 and the formed sidewall of buffering stress pattern 212b (being groove), and the number of this cambered surface can be one or more.
From the above, disclosed cambered surface 222 all is to cooperate buffering stress pattern 212a to illustrate in the foregoing description, certainly being familiar with this skill person should know, in the process that the sidewall 220 that only will solve grinding pad 200 is especially grinding, can be because of friction produce the situation of chip, can only design cambered surface 222 separately and need not collocation buffering stress pattern.In other words, the design of buffering stress pattern of the present invention and cambered surface, be optionally to be configured in maybe will cushion stress pattern and cambered surface on the grinding pad and be configured on the grinding pad jointly, with the sidewall of solution grinding pad or the center projection of grinding pad, and encircle the problem that friction produces chip with covering of wafer carrier, thus, can guarantee that wafer can not recruit contaminated in the process of grinding.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (18)
1, a kind of grinding pad that is used for cmp, this grinding pad has an abradant surface, a back side and a sidewall that is connected with this abradant surface and this back side, and this grinding pad has a milling zone and a center, wherein said milling zone is positioned at around the described center, dispose most first grooves, it is characterized in that with first degree of depth:
In this center of this grinding pad is to dispose a buffering stress pattern, to be buffered in the stress that this place, center of this abradant surface is subjected in the process of lapping, wherein said buffering stress pattern is by most second grooves with one second degree of depth or at least one opening with one second degree of depth is constituted, and described second degree of depth is greater than first degree of depth and less than half of this grinding pad gross thickness.
2, the grinding pad that is used for cmp according to claim 1 is characterized in that wherein said buffering stress pattern is configured in this abradant surface.
3, the grinding pad that is used for cmp according to claim 1 is characterized in that wherein said buffering stress pattern is configured in this back side.
4, the grinding pad that is used for cmp according to claim 1 is characterized in that wherein said buffering stress pattern is configured in this abradant surface and this back side.
5, the grinding pad that is used for cmp according to claim 1 it is characterized in that wherein said sidewall has more at least one cambered surface, and this cambered surface is to be adjacent to this abradant surface.
6, the grinding pad that is used for cmp according to claim 1 it is characterized in that having more at least one cambered surface on wherein said those second grooves or this opening and the formed sidewall of this abradant surface, and this cambered surface is to be adjacent to this abradant surface.
7, a kind of manufacture method that is used for the grinding pad of cmp, this grinding pad has an abradant surface, a back side and a sidewall that is connected with this abradant surface and this back side, and this grinding pad has a milling zone and a center, wherein said milling zone is positioned at around the described center, it is characterized in that it may further comprise the steps:
This milling zone at this grinding pad forms most first grooves with first degree of depth; And
Form a buffering stress pattern in this center of this grinding pad, to be buffered in the stress that this place, center of this abradant surface is subjected in the process of lapping, wherein said buffering stress pattern is by most second grooves with one second degree of depth or at least one opening with one second degree of depth is constituted, and described second degree of depth is greater than first degree of depth and less than half of this grinding pad gross thickness.
8, the manufacture method that is used for the grinding pad of cmp according to claim 7, the method that it is characterized in that this buffering stress pattern of wherein said formation comprise utilizes machinery or chemical processing procedure to form this buffering stress pattern in this center.
When 9, the manufacture method that is used for the grinding pad of cmp according to claim 7, the method that it is characterized in that this buffering stress pattern of wherein said formation are included in molded this grinding pad, utilize mould to come molded with buffering stress pattern.
10, the manufacture method that is used for the grinding pad of cmp according to claim 7 is characterized in that wherein said buffering stress pattern is formed in this abradant surface.
11, the manufacture method that is used for the grinding pad of cmp according to claim 7 is characterized in that wherein said buffering stress pattern is formed in this back side.
12, the manufacture method that is used for the grinding pad of cmp according to claim 7 is characterized in that wherein said buffering stress pattern is formed in this abradant surface and this back side.
13, the manufacture method that is used for the grinding pad of cmp according to claim 7 is characterized in that the manufacture method of wherein said grinding pad more may further comprise the steps:
Form at least one cambered surface being adjacent on this side-walls at this abradant surface place, produce chip to avoid in process of lapping this side-walls to be worn.
14, the manufacture method that is used for the grinding pad of cmp according to claim 13, the method that it is characterized in that wherein said this cambered surface of formation comprise utilizes machinery or chemical processing procedure to form this cambered surface at this sidewall.
When 15, the manufacture method that is used for the grinding pad of cmp according to claim 13, the method that it is characterized in that wherein said this cambered surface of formation are included in molded this grinding pad, utilize mould to come molded with this cambered surface pattern.
16, the manufacture method that is used for the grinding pad of cmp according to claim 13 is characterized in that the manufacture method of wherein said grinding pad more may further comprise the steps:
Be adjacent to this abradant surface and this buffering stress pattern place forms at least one cambered surface.
17, the manufacture method that is used for the grinding pad of cmp according to claim 16, the method that it is characterized in that wherein said those cambered surfaces of formation comprise utilizes machinery or chemical processing procedure to form those cambered surfaces at this sidewall.
When 18, the manufacture method that is used for the grinding pad of cmp according to claim 16, the method that it is characterized in that wherein said those cambered surfaces of formation are included in molded this grinding pad, utilize mould to come molded with those cambered surface patterns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100429691A CN100436060C (en) | 2004-06-04 | 2004-06-04 | Grinding pad and its making process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100429691A CN100436060C (en) | 2004-06-04 | 2004-06-04 | Grinding pad and its making process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1706594A CN1706594A (en) | 2005-12-14 |
| CN100436060C true CN100436060C (en) | 2008-11-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100429691A Active CN100436060C (en) | 2004-06-04 | 2004-06-04 | Grinding pad and its making process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100436060C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009139401A1 (en) * | 2008-05-16 | 2009-11-19 | 東レ株式会社 | Polishing pad |
| TWI595968B (en) * | 2016-08-11 | 2017-08-21 | 宋建宏 | Polishing pad and method for manufacturing the same |
| TWI642772B (en) * | 2017-03-31 | 2018-12-01 | 智勝科技股份有限公司 | Polishing pad and polishing method |
| TWI674947B (en) * | 2018-04-19 | 2019-10-21 | 智勝科技股份有限公司 | Polishing pad, manufacturing method of polishing pad and polishing method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1227152A (en) * | 1998-02-26 | 1999-09-01 | 日本电气株式会社 | Chemical mechanical polishing apparatus and method of chemical mechanical polishing |
| US6517419B1 (en) * | 1999-10-27 | 2003-02-11 | Strasbaugh | Shaping polishing pad for small head chemical mechanical planarization |
| US6520847B2 (en) * | 1997-05-15 | 2003-02-18 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in chemical mechanical polishing |
| CN1118354C (en) * | 1997-05-09 | 2003-08-20 | 罗德尔控股公司 | Mosaic polishing pads and method relating thereto |
| US20030224706A1 (en) * | 2002-05-31 | 2003-12-04 | Sabo Gary L. | Foam buffing/polishing pad |
| CN1494983A (en) * | 2002-06-03 | 2004-05-12 | Jsr��ʽ���� | Polishing mattress and multilayer polishing mattress |
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2004
- 2004-06-04 CN CNB2004100429691A patent/CN100436060C/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1118354C (en) * | 1997-05-09 | 2003-08-20 | 罗德尔控股公司 | Mosaic polishing pads and method relating thereto |
| US6520847B2 (en) * | 1997-05-15 | 2003-02-18 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in chemical mechanical polishing |
| CN1227152A (en) * | 1998-02-26 | 1999-09-01 | 日本电气株式会社 | Chemical mechanical polishing apparatus and method of chemical mechanical polishing |
| US6517419B1 (en) * | 1999-10-27 | 2003-02-11 | Strasbaugh | Shaping polishing pad for small head chemical mechanical planarization |
| US20030224706A1 (en) * | 2002-05-31 | 2003-12-04 | Sabo Gary L. | Foam buffing/polishing pad |
| CN1494983A (en) * | 2002-06-03 | 2004-05-12 | Jsr��ʽ���� | Polishing mattress and multilayer polishing mattress |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1706594A (en) | 2005-12-14 |
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