TWI642772B - Polishing pad and polishing method - Google Patents

Abstract

A polishing pad suitable for use in a polishing process and comprising an abrasive layer, an adhesive layer, and at least one heat storage material. The polishing layer has a polishing surface and a back surface opposite to each other. The adhesive layer is disposed on the back surface of the polishing layer. At least one region of the heat storage material is disposed above the adhesive layer.

Description

Polishing pad and grinding method

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a polishing pad and a method of polishing, and more particularly to a polishing pad which can be lowered in temperature during a polishing process and a polishing method using the same.

In the manufacturing process of components in the industry, the grinding process is a technique that is more commonly used today to planarize the surface of the object being ground. In the polishing process, a polishing liquid may be optionally provided between the surface of the object and the polishing pad, and planarized by mechanical friction generated by relative movement of the object and the polishing pad relative to each other. The interface between the layers of the polishing pad is usually adhered by an adhesive layer, but the temperature of the polishing pad during the polishing process is increased by the heat generated by the friction, so that the adhesive layer is liable to be deteriorated, deformed or reduced in viscosity, thereby affecting The stability of the grinding process.

Therefore, there is still a need to provide means for reducing the temperature of the polishing pad during the polishing process for the industry to choose.

The invention provides a polishing pad and a grinding method, so that during the grinding process During the process, the temperature of the polishing pad can be adjusted to avoid the problem that the adhesive layer is deteriorated, deformed or deteriorated due to high temperature during the polishing process.

The polishing pad of the present invention is suitable for use in a polishing process and includes an abrasive layer, an adhesive layer, and at least one heat storage material. The polishing layer has a polishing surface and a back surface opposite to each other. The adhesive layer is disposed on the back surface of the polishing layer. At least one region of the heat storage material is disposed above the adhesive layer.

The polishing pad of the present invention is suitable for use in a polishing process and includes an abrasive layer, a substrate layer, a first adhesive layer, a second adhesive layer, and at least one heat storage material. The base layer is disposed below the polishing layer. The first adhesive layer is disposed between the polishing layer and the base layer. The second adhesive layer is disposed below the base layer. At least one region of the heat storage material is disposed between the first adhesive layer and the second adhesive layer.

The grinding method of the present invention is suitable for abrasive articles and includes the following steps. A polishing pad is provided, wherein the polishing pad is any one of the polishing pads described above. Pressure is applied to the article to press onto the polishing pad. Relative motion is provided to the object and the polishing pad for the grinding process.

Based on the above, in the polishing pad of the present invention, the region disposed through the at least one heat storage material is located above the adhesive layer, or the region disposed through the at least one heat storage material is located between the first adhesive layer and the second adhesive layer Therefore, when the polishing process using the polishing pad of the present invention is performed, the degree of temperature increase caused by mechanical friction of the polishing pad of the present invention can be reduced, thereby preventing the adhesive layer from being deteriorated, deformed or adhered due to high temperature during the polishing process. The problem of sexual decline.

In order to make the above features and advantages of the present invention more apparent, the following is a special The embodiments are described in detail below in conjunction with the drawings.

100, 200, 300, 400, 500, 600‧‧‧ polishing pads

110, 210, 310, 410, 510, 610‧‧ ‧ abrasive layer

120, 220, 320‧‧‧ adhesive layer

130, 330, 430, 530, 630 ‧ ‧ thermal storage materials

230a‧‧‧First heat storage material

230b‧‧‧second heat storage material

140, 240, 340, 440, 540, 640‧ ‧ coating

350‧‧‧ interface layer

420a, 520a, 620a‧‧‧ first adhesive layer

420b, 520b, 620b‧‧‧ second adhesive layer

460, 560, 660‧ ‧ basal layer

A‧‧‧Milling track area

B‧‧‧ Non-grinding track area

BS‧‧‧Back

C‧‧‧ Rotation Center

D‧‧‧Ditch depth

G‧‧‧ trench

Gb‧‧‧ bottom

H, K, L, M‧‧‧ heat storage areas

Ht, Kt, Lt, Mt‧‧‧ top edge

Lb, Mb‧‧‧ bottom edge

PS‧‧‧Grinding surface

S10, S12, S14‧‧ steps

T‧‧‧ thickness

1 is a schematic top view of a polishing pad according to a first embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view taken along line I-I' of Fig. 1.

Figure 3 is a graph showing the relationship between the polishing time of the polishing pad of the present invention and the abrasive article of the conventional polishing pad and the temperature of the polishing pad.

4 is a schematic cross-sectional view of a polishing pad in a radial direction in accordance with a second embodiment of the present invention.

Figure 5 is a graph of temperature versus heat flow rate for two heat storage materials of the present invention.

Figure 6 is a schematic cross-sectional view of a polishing pad in a radial direction in accordance with a third embodiment of the present invention.

Figure 7 is a schematic cross-sectional view of a polishing pad in a radial direction in accordance with a fourth embodiment of the present invention.

Figure 8 is a schematic cross-sectional view of a polishing pad in a radial direction in accordance with a fifth embodiment of the present invention.

Figure 9 is a schematic cross-sectional view of a polishing pad in a radial direction in accordance with a sixth embodiment of the present invention.

Figure 10 is a flow chart of a polishing method in accordance with an embodiment of the present invention.

1 is a schematic top view of a polishing pad according to a first embodiment of the present invention. Fig. 2 is a schematic cross-sectional view taken along line I-I' of Fig. 1. In detail, the line I-I' in Fig. 1 is disposed along the radial direction, that is, Fig. 2 is a schematic cross-sectional view in the radial direction.

Referring to FIG. 1 and FIG. 2 simultaneously, the polishing pad 100 of the present embodiment includes a polishing track area A and a non-polishing track area B, wherein the non-polishing track area B surrounds the surrounding grinding track area A. In detail, the polishing pad 100 is suitable for a polishing process to polish an object, and when the object is subjected to a grinding process using the polishing pad 100, the object is placed substantially in the polishing track area A. In addition, the polishing pad 100 has a rotation center C, and the polishing pad 100 rotates counterclockwise or clockwise around the rotation center C. The center of rotation C is, for example, at the center point of the polishing pad 100.

On the other hand, in the present embodiment, the polishing pad 100 includes the polishing layer 110, the plurality of grooves G, the adhesive layer 120, and the heat storage material 130. It must be noted that, in order to clearly indicate the grinding track area A and the non-polishing track area B, the groove G is omitted in FIG.

The polishing layer 110 has a polishing surface PS and a back surface BS with respect to the polishing surface PS. In the present embodiment, when the object is subjected to the polishing process using the polishing pad 100, the object comes into contact with the polishing surface PS of the polishing layer 110. In addition, in the present embodiment, the polishing layer 110 is composed of, for example, a polymer substrate, wherein the polymer substrate may be polyester, polyether, polyurethane, or polycarbonate. ), polyacrylate, polybutadiene, or the rest via a suitable thermosetting resin (thermosetting) A polymer substrate synthesized from a thermoplastic resin or a thermoplastic resin, but the invention is not limited thereto.

The groove G is disposed in the polishing surface PS of the polishing layer 110. In the present embodiment, the bottom portion Gb of the groove G has a groove depth D from the polishing surface PS. In addition, in the present embodiment, although the cross section of the polishing pad 100 in the radial direction includes a plurality of grooves G (as shown in FIG. 2 ), the present invention is not limited thereto as long as the polishing pad 100 includes at least one groove. Groove G falls within the scope of the present invention. Further, the distribution shape of the groove G may be, for example, a concentric circle, a different center circle, an ellipse, a polygonal ring, a spiral ring, an irregular ring, a parallel line shape, a radial shape, a radial arc shape, a spiral shape, a dot shape, and an XY lattice.

The adhesive layer 120 is disposed on the back surface BS of the polishing layer 110. That is, in the present embodiment, the adhesive layer 120 is adhered to the back surface BS of the polishing layer 110. In addition, in the present embodiment, the adhesive layer 120 includes, but is not limited to, a carrierless adhesive or a double-sided adhesive. The material of the adhesive layer 120 is, for example, an acrylic adhesive, an anthrone rubber, a rubber adhesive, an epoxy resin adhesive or a polyurethane adhesive, but the present invention is not limited thereto.

The heat storage material 130 is disposed in the heat storage region H. In the present embodiment, the heat storage region H is located above the adhesive layer 120 and does not contact the bottom portion Gb of the trench G. As described above, the groove G has a groove depth D, and the distance between the top edge Ht of the heat storage region H and the abrasive surface PS is greater than D. In addition, the distance between the top edge Ht and the polishing surface PS may be selected to be less than or equal to 1.5D, so that the area in which the heat storage material 130 is disposed is larger to achieve an effect of effectively lowering the temperature of the polishing pad. From another point of view, in the present embodiment, the top edge Ht of the heat storage region H does not contact or overlap with the bottom portion Gb of the groove G.

Further, in the present embodiment, the heat storage material 130 is dispersed in the material of the polishing layer 110. That is, in the present embodiment, the heat storage material 130 is distributed in a portion of the polishing layer 110, and the method of manufacturing the polishing layer 110 includes the step of mixing the heat storage material 130 with the material constituting the polishing layer 110. Specifically, the heat storage material 130 is distributed in the polishing layer 110 below the position where the distance between the polishing surface PS is greater than D, and the portion of the polishing layer 110 including the heat storage material 130 and the portion not including the heat storage material 130 Portions are, for example, combined by perfusion. From another point of view, in the present embodiment, the heat storage region H is located in a portion of the polishing layer 110.

Additionally, a coating 140 that coats the heat storage material 130 can be selected to form as desired. In detail, in the present embodiment, the material of the coating layer 140 does not chemically react with the material of the polishing layer 110 or the heat storage material 130. Specifically, in the present embodiment, the material of the coating layer 140 is, for example, an organic material, and includes a phenol resin, a urea resin, a polystyrene or a polyamide, but the present invention is not limited thereto.

In addition, in the present embodiment, the heat storage material 130 includes an inorganic heat storage material, an organic heat storage material, or a combination thereof. Specifically, the inorganic heat storage materials include (but are not limited to): hydrate salts, for example sodium acetate trihydrate (CH ₃ COONa.3H ₂ O) or calcium chloride hexahydrate (CaCl ₂ .6H ₂ O The organic heat storage material includes, but is not limited to, a polyol, a fatty alcohol, a fatty acid or an alkane compound, wherein the polyol is, for example, trimethylolpropane (TMP, C ₆ H ₁₄ O ₃ ), a fatty alcohol such as Is 1-tetradecanol (C ₁₄ H ₃₀ O), and the fatty acid is, for example, lauric acid (CH ₃ (CH ₂ ) ₁₀ COOH) or citric acid (Capric acid, CH ₃ (CH ₂ ) ₈ COOH), The alkane compound is, for example, n-icosane (C ₂₀ H ₄₂ ), n-docosane (C ₂₁ H ₄₄ ), n-docosane (C ₂₂ H ₄₆ ), n-tricosane (C ₂₃ H ₄₈ ) or N-tetracosane (C ₂₄ H ₅₀ ).

It is worth mentioning that the heat storage material 130 will absorb the heat in a specific temperature or temperature range to absorb the surrounding heat, thereby achieving the purpose of reducing the ambient temperature. In detail, in the present embodiment, the heat storage material 130 undergoes an endothermic reaction at a specific temperature, which is between the lowest temperature Tmin and the highest temperature Tmax that the polishing pad 100 has during the polishing process. That is to say, in the present embodiment, the heat storage material 130 must undergo an endothermic reaction during the polishing process. As such, in the present embodiment, the through-polishing pad 100 includes the heat storage material 130 such that heat generated by the mechanical friction can be absorbed by the heat storage material 130 during the polishing process, whereby the polishing pad 100 is caused by mechanical friction. The degree of temperature rise is lowered, and the purpose of effectively lowering the temperature of the polishing pad 100 is achieved. 3 is a view showing the relationship between the polishing time of the polishing pad of the present invention and the polishing article of the conventional polishing pad and the polishing pad temperature. As can be seen from FIG. 3, during the polishing process for polishing the object, compared with the conventional polishing pad, The polishing pad of the present invention has a lower temperature.

In detail, the minimum temperature Tmin may be the temperature of the normal temperature water (between about 25 ° C and 35 ° C) or the temperature of the cooled water (for example, 10 ° C or less). This is because the minimum temperature Tmin is the surface temperature when the polishing pad 100 performs the cleaning process while the machine is idle, or when the cleaning process is performed before the next object enters the polishing pad 100, wherein the cleaning process can use normal temperature water or after cooling. After the water comes. In addition, the maximum temperature Tmax depends on different grinding processes. For example, during the oxide polishing process, the maximum temperature of the polishing pad is about 65 ° C; during the copper polishing process, the maximum temperature of the polishing pad is about 55 ° C; during the tungsten polishing process, the maximum temperature of the polishing pad is about 80 ° °C. Additionally, the particular temperature can be a fixed temperature or a range of temperatures.

Further, in the present embodiment, the physical state or molecular structure of the heat storage material 130 may change after the endothermic reaction occurs. For example, in one embodiment, the intermolecular arrangement of the heat storage material 130 after the endothermic reaction occurs is looser than the intermolecular arrangement prior to the endothermic reaction. In other words, the intermolecular arrangement of the heat storage material 130 before the endothermic reaction occurs is denser than the intermolecular arrangement after the endothermic reaction occurs. In another embodiment, in one embodiment, the heat storage material 130 transitions from a first solid state to a second solid state due to an endothermic reaction, wherein the first solid state is different from the molecular arrangement of the second solid state, such as a crystal. The arrangement is different.

It should be noted that, as described above, in the present embodiment, the through-polishing pad 100 includes the heat storage material 130 such that the temperature of the polishing pad 100 during the polishing process can be lowered. As a result, the heat storage region H disposed with the heat storage material 130 is located above the adhesive layer 120, so that the adhesive layer 120 disposed under the heat storage region H does not deteriorate, deform, or adhere to the high temperature during the polishing process. The problem of declining sex to maintain the stability of the grinding process.

On the other hand, in the present embodiment, the heat storage region H through which the heat storage material 130 is disposed is not in contact with the bottom portion Gb of the groove G, so that when used When the grinding pad 100 performs a grinding process on the object, it is possible to prevent the object from coming into contact with the heat storage material 130 to cause scratching and affect the polishing quality.

In the embodiment of FIG. 2, although the heat storage region H in which the heat storage material 130 is disposed is not in contact with the bottom portion Gb of the groove G in the polishing pad 100, the present invention is not limited thereto. The selection of the distance between the top edge Ht of the heat storage region H and the polishing surface PS may depend on the degree of wear of the polishing layer 110 when the polishing pad 100 is in use. In other embodiments, the top edge Ht of the heat storage region H is D/2, 2D/3, 3D/4, 4D/5, or D from the abrasive surface PS, thereby avoiding objects and heat in these embodiments. The storage material 130 contacts and causes scratches and affects the quality of the polishing. In addition, in other embodiments, for some specific polishing processes, the object may be less likely to be scratched, or the heat storage material 130 that is not easily scratched by the object may be selected, and the heat storage material 130 may be selectively distributed throughout the polishing pad 100. In the polishing layer 110.

Further, in the present embodiment, the polishing pad 100 includes the coating layer 140 covering the heat storage material 130, but the present invention is not limited thereto. In other embodiments, where the material of the abrasive layer 110 mixed with the heat storage material 130 is capable of sealing the heat storage material 130 therein, the polishing pad 100 may not include the cladding layer 140 that coats the heat storage material 130.

In the first embodiment described above, the polishing pad 100 includes one type of heat storage material 130 disposed in the polishing track area A and the non-polishing track area B, but the present invention is not limited thereto. The polishing track area A generally has a higher temperature relative to the non-ground track area, so in other embodiments, the heat included in the polishing pad 100 The storage material 130 may also optionally be disposed in the polishing track area A to achieve a more even effect of the extent to which the temperature of the polishing pad 100 is lowered during the polishing process. In addition, in other embodiments, the polishing pad may also include different heat storage materials disposed in the polishing track area A and the non-polishing track area B, respectively. Hereinafter, a detailed description will be given with reference to FIG. 4.

4 is a schematic cross-sectional view of a polishing pad in a radial direction in accordance with a second embodiment of the present invention. Referring to Figure 1 for a top view of the polishing pad 200 of Figure 4, the position of the cross-section of Figure 4 can be referred to the position of the line I-I' of Figure 1. Referring to FIG. 4 and FIG. 2 simultaneously, the polishing pad 200 of FIG. 4 is similar to the polishing pad 100 of FIG. 2, and therefore the same or similar elements are denoted by the same or similar symbols, and the related description may refer to the foregoing and will not be repeated. In addition, the polishing layer 210 and the adhesive layer 220 may be the same as or similar to those of the first embodiment described above, and thus the related description will not be repeated. Hereinafter, the difference between the two will be described.

Referring to FIG. 4 , in the embodiment, the polishing pad 200 includes a first heat storage material 230 a and a second heat storage material 230 b , and the first heat storage material 230 a and the second heat storage material 230 b are disposed in the heat storage region H. in. From another point of view, in the present embodiment, the first heat storage material 230a is disposed in the polishing track area A, and the second heat storage material 230b is disposed in the non-polishing track area B. That is, in the present embodiment, different heat storage materials are disposed in different regions of the polishing pad 200.

In addition, in the present embodiment, the first heat storage material 230a and the second heat storage material 230b are all dispersed in the material of the polishing layer 210. That is, in In this embodiment, the first heat storage material 230a and the second heat storage material 230b are distributed in the polishing layer 210, and the method of manufacturing the polishing layer 210 includes respectively forming structural portions corresponding to the polishing track area A and the non-polishing track area B. The method of forming the structural portion corresponding to the polishing track area A includes, for example, a step of mixing the first heat storage material 230a with the material constituting the polishing layer 210, and a method of forming the structural portion corresponding to the non-polishing track area B includes, for example, : a step of mixing the second heat storage material 230b with the material constituting the polishing layer 210. Specifically, the first heat storage material 230a and the second heat storage material 230b are distributed in the polishing layer 210 at a position lower than a distance between the polishing surface PS and greater than D. In addition, in an embodiment, the manufacturing method of the polishing layer 210 includes, for example, after forming a structural portion corresponding to the polishing track region A and a structural portion corresponding to the non-polishing track region B, respectively, and combining the two structures, wherein the two structures are combined For example, bonding is performed by an adhesive or a heat fusion method. In another embodiment, the manufacturing method of the polishing layer 210 includes, for example, forming a structural portion corresponding to the polishing track region A using a filling method, and then forming a structural portion corresponding to the non-polishing track region B using a filling method, where the corresponding non-polishing The structural portion of the track area B is integrally connected with the structural portion of the corresponding grinding track area A that has been formed. The portion of the polishing layer 210 including the first heat storage material 230a and the second heat storage material 230b and the portion not including the first heat storage material 230a and the second heat storage material 230b are respectively combined by a perfusion method. From another point of view, in the present embodiment, the heat storage region H is located in a portion of the polishing layer 210.

In addition, the coated first heat storage material 230a is selectively formed as needed. And the coating layer 240 of the second heat storage material 230b, and the characteristics and materials of the coating layer 240 are as described in the coating layer 140 in the foregoing first embodiment, and thus will not be described herein.

In addition, in the present embodiment, the first heat storage material 230a and the second heat storage material 230b respectively include an inorganic heat storage material, an organic heat storage material, or a combination thereof. Specifically, the inorganic heat storage materials include (but are not limited to): hydrate salts, for example sodium acetate trihydrate (CH ₃ COONa.3H ₂ O) or calcium chloride hexahydrate (CaCl ₂ .6H ₂ O The organic heat storage material includes, but is not limited to, a polyol, a fatty alcohol, a fatty acid or an alkane compound, wherein the polyol is, for example, trimethylolpropane (TMP, C ₆ H ₁₄ O ₃ ), a fatty alcohol such as Is 1-tetradecanol (C ₁₄ H ₃₀ O), and the fatty acid is, for example, lauric acid (CH ₃ (CH ₂ ) ₁₀ COOH) or citric acid (Capric acid, CH ₃ (CH ₂ ) ₈ COOH), The alkane compound is, for example, n-icosane (C ₂₀ H ₄₂ ), n-docosane (C ₂₁ H ₄₄ ), n-docosane (C ₂₂ H ₄₆ ), n-tricosane (C ₂₃ H ₄₈ ) or N-tetracosane (C ₂₄ H ₅₀ ).

It is worth mentioning that the first heat storage material 230a and the second heat storage material 230b may absorb heat in different specific temperatures or different temperature ranges to absorb the surrounding heat, thereby achieving the purpose of reducing the ambient temperature. In detail, in the present embodiment, the first heat storage material 230a and the second heat storage material 230b may have an endothermic reaction at different specific temperatures, and the different specific temperatures are between the polishing pad 200 and the polishing process. The minimum temperature Tmin and the highest temperature Tmax during the period. That is to say, in the present embodiment, both the first heat storage material 230a and the second heat storage material 230b undergo an endothermic reaction during the polishing process. As shown in FIG. 5, the first heat storage material 230a and the second heat storage material 230b will undergo an endothermic reaction at a different temperature between the lowest temperature Tmin and the highest temperature Tmax. As such, in the present embodiment, the through-polishing pad 200 includes the first heat storage material 230a and the second heat storage material 230b, so that the heat generated by the mechanical friction can be used by the first heat storage material 230a during the polishing process. The second heat storage material 230b is absorbed, whereby the degree of temperature rise caused by the mechanical friction of the polishing pad 200 is lowered, and the purpose of effectively lowering the temperature of the polishing pad 200 is achieved, as shown in FIG. In addition, the specific temperature may be a fixed temperature or a temperature range.

Further, the inventors have found that when the object is subjected to a grinding process using a polishing pad, there is a temperature drop between different regions of the polishing pad, that is, the polishing pad has a temperature gradient or a non-uniform temperature distribution. In view of this, in the present embodiment, the polishing pad 200 transmits the first heat storage material 230a and the second heat storage which respectively generate an endothermic reaction at different specific temperatures in the polishing track area A and the non-polishing track area B. The material 230b is such that the extent to which the temperature of the polishing pad 200 is lowered during the polishing process can be more evenly averaged. For example, in an embodiment in which the polishing pad 200 corresponds to a temperature in the polishing track area A during the polishing process that is higher than a temperature in the non-polishing track area B, the polishing pad 200 has the included characteristics as shown in FIG. The first heat storage material 230a and the second heat storage material 230b have a lower endothermic reaction temperature than the second heat storage material 230b, or the first heat storage material 230a is compared to the first heat storage material 230a. The two heat storage material 230b has a large heat absorption amount (the area occupied by the endothermic peak as shown in FIG. 5), so that the temperature of the polishing pad 200 can be more uniformly adjusted.

In addition, in the present embodiment, after the endothermic reaction occurs, the physical state or molecular structure of the first heat storage material 230a and the physical state or molecular structure of the second heat storage material 230b may change, which is the same as the foregoing first embodiment. The heat storage material 130 is the same, and thus the related description has been described in detail in the foregoing first embodiment, and thus will not be described again.

It should be noted that, as described above, in the present embodiment, the through-polishing pad 200 includes the first heat storage material 230a and the second heat storage material 230b, so that the temperature of the polishing pad 200 during the polishing process can be adjusted evenly. drop. As a result, the heat storage region H disposed with the first heat storage material 230a and the second heat storage material 230b is located above the adhesive layer 220, so that the adhesive layer 220 disposed under the heat storage region H is not during the polishing process. The problem of deterioration, deformation, or viscosity reduction due to high temperature occurs to maintain the stability of the polishing process.

On the other hand, in the present embodiment, the heat storage region H through which the first heat storage material 230a and the second heat storage material 230b are disposed is not in contact with the bottom portion Gb of the groove G, so that the object is used when the polishing pad 200 is used. During the polishing process, it is possible to prevent the object from coming into contact with the first heat storage material 230a and the second heat storage material 230b, causing scratches and affecting the polishing quality.

In the embodiment of FIG. 4, although the heat storage region H in which the first heat storage material 230a and the second heat storage material 230b are disposed is not in contact with the bottom portion Gb of the groove G in the polishing pad 200, the present invention does not Limited to this. The selection of the distance between the top edge Ht of the heat storage region H and the polishing surface PS may depend on the degree of wear of the polishing layer 210 when the polishing pad 200 is in use. In other embodiments The top edge Ht of the heat storage region H is D/2, 2D/3, 3D/4, 4D/5, or D from the abrasive surface PS, thereby avoiding the object and the first heat storage material in these embodiments. The contact between 230a and the second heat storage material 230b causes scratching and affects the quality of the polishing. In addition, in other embodiments, for some specific polishing processes, the object may not be easily scratched, or the first heat storage material 230a and the second heat storage material 230b that are not easy to scratch the object are selected, and the first heat storage is performed. The material 230a and the second heat storage material 230b may be selectively distributed throughout the polishing layer 210 of the polishing pad 200.

Further, in the present embodiment, the polishing pad 200 includes the coating layer 240 covering the first heat storage material 230a and the second heat storage material 230b, but the present invention is not limited thereto. In other embodiments, the material of the polishing layer 210 mixed with the first heat storage material 230a and the second heat storage material 230b can seal the first heat storage material 230a and the second heat storage material 230b therein. The polishing pad 200 may not include the coating layer 240 covering the first heat storage material 230a and the second heat storage material 230b.

In the foregoing first embodiment, the heat storage material 130 is dispersed in the material of the polishing layer 110 in the corresponding heat storage region H, but the present invention is not limited thereto. In other embodiments, the heat storage material may also be present in the polishing pad in a pattern that forms an interface layer in the heat storage region H. Hereinafter, a detailed description will be given with reference to Fig. 6 .

Figure 6 is a schematic cross-sectional view of a polishing pad in a radial direction in accordance with another embodiment of the present invention. FIG. 1 is a top view of the polishing pad 300 of FIG. The position of the section of Fig. 6 can be referred to the position of the line I-I' in Fig. 1. Referring to FIG. 6 and FIG. 2 simultaneously, the polishing pad 300 of FIG. 6 is similar to the polishing pad 100 of FIG. 2, and therefore the same or similar elements are denoted by the same or similar symbols, and the related description may be omitted from the foregoing. In addition, the polishing layer 310 and the adhesive layer 320 may be the same as or similar to those in the foregoing first embodiment, and thus the related description will not be repeated. Hereinafter, the difference between the two will be described.

Referring to FIG. 6 , in the present embodiment, the heat storage material 330 is disposed in the heat storage region H. In detail, in the present embodiment, the heat storage material 330 forms the interface layer 350 in the heat storage region H. That is, in the present embodiment, the heat storage region H covers the entire interface layer 350 formed of the heat storage material 330. In the present embodiment, the interface layer 350 is located above the adhesive layer 320. In the present embodiment, the interface layer 350 is disposed between the adhesive layer 320 and the polishing layer 310. Further, as described above, since the heat storage region H does not come into contact with the bottom portion Gb of the groove G, the interface layer 350 disposed in the heat storage region H does not come into contact with the bottom portion Gb of the groove G.

In one embodiment, the interface layer 350 and the polishing layer 310 are fabricated using, for example, the same mold. In detail, the method of manufacturing the interface layer 350 and the polishing layer 310 includes, for example, injecting the heat storage material 330 into the mold to form the interface layer 350 by using a potting method, and injecting the material to be formed into the polishing layer 310 by using a potting method. In the mold of the interface layer 350. However, the present invention is not limited to the above-described method of manufacturing the interface layer 350 and the polishing layer 310. The present invention may also select the structure of the interface layer 350 and the polishing layer 310 by other manufacturing methods.

In addition, the coating layer 340 covering the heat storage material 330 may be selected as needed, and the characteristics and materials of the coating layer 340 are as described in the coating layer 140 in the first embodiment, and thus will not be described herein.

Additionally, in the present embodiment, the heat storage material 330 includes an inorganic heat storage material, an organic heat storage material, or a combination thereof. Specifically, the inorganic heat storage materials include (but are not limited to): hydrate salts, for example sodium acetate trihydrate (CH ₃ COONa.3H ₂ O) or calcium chloride hexahydrate (CaCl ₂ .6H ₂ O The organic heat storage material includes, but is not limited to, a polyol, a fatty alcohol, a fatty acid or an alkane compound, wherein the polyol is, for example, trimethylolpropane (TMP, C ₆ H ₁₄ O ₃ ), a fatty alcohol such as Is 1-tetradecanol (C ₁₄ H ₃₀ O), and the fatty acid is, for example, lauric acid (CH ₃ (CH ₂ ) ₁₀ COOH) or citric acid (Capric acid, CH ₃ (CH ₂ ) ₈ COOH), The alkane compound is, for example, n-icosane (C ₂₀ H ₄₂ ), n-docosane (C ₂₁ H ₄₄ ), n-docosane (C ₂₂ H ₄₆ ), n-tricosane (C ₂₃ H ₄₈ ) or N-tetracosane (C ₂₄ H ₅₀ ).

It is worth mentioning that the heat storage material 330 will absorb the heat in a specific temperature or temperature range to absorb the surrounding heat, thereby achieving the purpose of reducing the ambient temperature. In detail, in the present embodiment, the heat storage material 330 may undergo an endothermic reaction at a specific temperature, which is between the lowest temperature Tmin and the highest temperature Tmax that the polishing pad 300 has during the polishing process. That is to say, in the present embodiment, the heat storage material 330 must undergo an endothermic reaction during the polishing process. As such, in the present embodiment, the through-polishing pad 300 includes the heat storage material 330 such that heat generated by the mechanical friction can be absorbed by the heat storage material 330 during the polishing process, whereby the polishing pad 300 is mechanically rubbed The degree of temperature rise caused is lowered, and the purpose of effectively lowering the temperature of the polishing pad 300 is achieved as shown in FIG. In addition, the specific temperature may be a fixed temperature or a temperature range.

In addition, in the present embodiment, after the endothermic reaction occurs, the physical state or molecular structure of the heat storage material 330 changes, which is the same as the heat storage material 130 in the first embodiment described above, and thus the related description has been made in the foregoing. This embodiment is described in detail in the embodiment, and thus will not be described again.

It should be noted that, as described above, in the present embodiment, the through-polishing pad 300 includes the heat storage material 330 such that the temperature of the polishing pad 300 during the polishing process can be lowered. In this way, the heat storage region H disposed with the heat storage material 330 is located above the adhesive layer 320, so that the adhesive layer 320 disposed under the heat storage region H does not deteriorate, deform, or adhere to the high temperature during the polishing process. The problem of declining sex to maintain the stability of the grinding process.

Further, in the present embodiment, the polishing pad 300 includes the coating layer 340 covering the heat storage material 330, but the present invention is not limited thereto. In other embodiments, the polishing pad 300 may not include the coating layer 340 covering the heat storage material 330 in the case where the heat storage material 330 after the endothermic reaction does not easily flow to contaminate the polishing layer 310 or the adhesive layer 320.

Further, based on the contents of the second and third embodiments, the polishing pad 300 of the third embodiment can also adopt the same concept as that of the polishing pad 200 of the second embodiment, through the polishing track area A and the non-polishing track area. Different heat storage materials are arranged in B, instead of being originally arranged in the grinding track area A and non-research A heat storage material 330 in the track area B is ground to achieve a more even effect of the extent to which the temperature of the polishing pad 300 is lowered during the polishing process. Incidentally, the polishing track area A generally has a higher temperature than the non-polishing track area B, and the heat storage material 330 included in the polishing pad 300 may also be disposed only in the grinding track area A, and may also be achieved. During the polishing process, the degree to which the temperature of the polishing pad 300 is lowered can be more evenly averaged.

Figure 7 is a schematic cross-sectional view of a polishing pad in a radial direction in accordance with another embodiment of the present invention. Referring to Figure 1 for a top view of the polishing pad 400 of Figure 7, the position of the cross-section of Figure 7 can be referred to the position of the line I-I' in Figure 1. Referring to FIG. 7 and FIG. 2 simultaneously, the polishing pad 400 of FIG. 7 is similar to the polishing pad 100 of FIG. 2, the difference is mainly that the polishing pad structures of the two are different, and the same or similar symbols are used to denote the same or similar components. And the related description can refer to the foregoing and will not be repeated. In addition, the polishing layer 410 may be the same as or similar to the corresponding one in the foregoing first embodiment, and thus the related description will not be repeated. Hereinafter, the difference between the two will be described.

Referring to FIG. 7 , the polishing pad 400 includes a base layer 460 disposed under the polishing layer 410 . In detail, in the present embodiment, the base layer 460 is used to pad the polishing layer 410 in the polishing pad 400, and the material of the base layer 460 is, for example, polyurethane, polybutadiene, polyethylene, polypropylene, polyethylene, and A copolymer of ethylene vinyl acetate or a copolymer of polypropylene and ethylene vinyl acetate, but the invention is not limited thereto.

The polishing pad 400 includes a first adhesive layer 420a disposed between the polishing layer 410 and the base layer 460. In detail, in the present embodiment, the first adhesive layer 420a is used to adhere the polishing layer 410 to the base layer 460. In addition, in the present embodiment, The first adhesive layer 420a includes, but is not limited to, a carrierless adhesive, a double-sided adhesive, a hot melt adhesive, or a moisture hardener. The material of the first adhesive layer 420a is, for example, an acrylic adhesive, an anthrone adhesive, a rubber adhesive, an epoxy resin adhesive or a polyurethane adhesive, but the invention is not limited thereto.

The polishing pad 400 includes a second adhesive layer 420b disposed under the base layer 460. In detail, in the present embodiment, the second adhesive layer 420b is adhered to the back surface of the base layer 460 away from the first adhesive layer 420a. That is, the base layer 460 is located between the first adhesive layer 420a and the second adhesive layer 420b. In addition, in the present embodiment, the second adhesive layer 420b includes, but is not limited to, a carrierless adhesive or a double-sided adhesive. The material of the second adhesive layer 420b is, for example, an acrylic adhesive, an anthrone adhesive, a rubber adhesive, an epoxy resin adhesive or a polyurethane adhesive, but the present invention is not limited thereto.

The heat storage material 430 is disposed in the heat storage area K. In the present embodiment, the heat storage region K is located between the first adhesive layer 420a and the second adhesive layer 420b. In detail, in the present embodiment, the heat storage region K covers the entire base layer 460. That is, the base layer 460 has a thickness T, and the distance between the top edge Kt of the heat storage region K and the bottom edge Kb is T.

In addition, in the present embodiment, the heat storage material 430 is dispersed in the material of the base layer 460. That is, in the present embodiment, the heat storage material 430 is distributed in the base layer 460, and the method of manufacturing the base layer 460 includes the step of mixing the heat storage material 430 with the material constituting the base layer 460.

In addition, the coating layer 440 covering the heat storage material 430 is selectively formed as needed, and the characteristics and materials of the coating layer 440 are as described in the foregoing first embodiment. The cover layer 140 is described, and thus will not be described again.

Additionally, in the present embodiment, the heat storage material 430 includes an inorganic heat storage material, an organic heat storage material, or a combination thereof. Specifically, the inorganic heat storage materials include (but are not limited to): hydrate salts, for example sodium acetate trihydrate (CH ₃ COONa.3H ₂ O) or calcium chloride hexahydrate (CaCl ₂ .6H ₂ O The organic heat storage material includes, but is not limited to, a polyol, a fatty alcohol, a fatty acid or an alkane compound, wherein the polyol is, for example, trimethylolpropane (TMP, C ₆ H ₁₄ O ₃ ), a fatty alcohol such as Is 1-tetradecanol (C ₁₄ H ₃₀ O), and the fatty acid is, for example, lauric acid (CH ₃ (CH ₂ ) ₁₀ COOH) or citric acid (Capric acid, CH ₃ (CH ₂ ) ₈ COOH), The alkane compound is, for example, n-icosane (C ₂₀ H ₄₂ ), n-docosane (C ₂₁ H ₄₄ ), n-docosane (C ₂₂ H ₄₆ ), n-tricosane (C ₂₃ H ₄₈ ) or N-tetracosane (C ₂₄ H ₅₀ ).

It is worth mentioning that the heat storage material 430 will absorb the heat in a specific temperature or temperature range to absorb the surrounding heat, thereby achieving the purpose of reducing the ambient temperature. In detail, in the present embodiment, the heat storage material 430 undergoes an endothermic reaction at a specific temperature, which is between the lowest temperature Tmin and the highest temperature Tmax that the polishing pad 400 has during the polishing process. That is to say, in the present embodiment, the heat storage material 430 must undergo an endothermic reaction during the polishing process. As such, in the present embodiment, the through-polishing pad 400 includes the heat storage material 430 such that heat generated by mechanical friction can be absorbed by the heat storage material 430 during the polishing process, whereby the polishing pad 400 is caused by mechanical friction. The degree of temperature rise is lowered, and the purpose of effectively lowering the temperature of the polishing pad 400 is achieved, as shown in FIG. In addition, the specific temperature may be one. A fixed temperature or a temperature range.

In addition, in the present embodiment, after the endothermic reaction occurs, the physical state or molecular structure of the heat storage material 430 is changed, which is the same as the heat storage material 130 in the first embodiment described above, and thus the related description has been described above. This embodiment is described in detail in the embodiment, and thus will not be described again.

It should be noted that, as described above, in the present embodiment, the through-polishing pad 400 includes the heat storage material 430 such that the temperature of the polishing pad 400 during the polishing process can be lowered. As a result, the heat storage area K disposed with the heat storage material 430 is located between the first adhesive layer 420a and the second adhesive layer 420b, so that the first adhesive layer 420a and the second adhesive disposed on both sides of the heat storage area K are adhered. The layer 420b does not suffer from deterioration, deformation, or viscosity reduction due to high temperature during the polishing process to maintain the stability of the polishing process.

Further, in the present embodiment, the polishing pad 400 includes the coating layer 440 covering the heat storage material 430, but the present invention is not limited thereto. In other embodiments, where the material of the substrate layer 460 mixed with the heat storage material 430 is capable of sealing the heat storage material 430 therein, the polishing pad 400 may not include the cladding layer 440 that coats the heat storage material 430.

Further, it is understood from the contents of the first to fourth embodiments that the polishing pad 400 of the fourth embodiment can adopt the same concept as the polishing pads 100 to 300 of the first to third embodiments, in the first adhesive layer 420a. A heat storage region configured with a heat storage material is formed above.

In addition, based on the contents of the second and fourth embodiments, the fourth implementation The polishing pad 400 of the embodiment can also adopt the same concept as that of the polishing pad 200 of the second embodiment, and the heat storage material is disposed in the polishing track area A and the non-polishing track area B, respectively, instead of being originally disposed in the grinding track area. A heat storage material 430 in the A and non-grinding track areas B is such that the degree to which the temperature of the polishing pad 400 is lowered during the polishing process can be more evenly averaged. Incidentally, the polishing track area A generally has a higher temperature than the non-polishing track area B, and the heat storage material 430 included in the polishing pad 400 may also be disposed only in the grinding track area A, and may also be achieved. During the polishing process, the degree to which the temperature of the polishing pad 400 is lowered can be more evenly averaged.

In the fourth embodiment described above, the heat storage region K covers the entire base layer 460, but the present invention is not limited thereto. The inventors have found that each adhesive layer has a different adhesive strength depending on the material selected for each adhesive layer, and each adhesive layer has a relatively different resistance to heat generated during the polishing process, so the heat storage region K does not necessarily need to cover the entire substrate layer. 460. In view of this, in other embodiments, the heat storage region K may also be located in a portion of the substrate layer. Hereinafter, a detailed description will be given with reference to FIGS. 8 and 9.

Figure 8 is a schematic cross-sectional view of a polishing pad in a radial direction in accordance with a fifth embodiment of the present invention. Referring to Figure 1 for a top view of the polishing pad 500 of Figure 8, the position of the cross-section of Figure 8 can be referred to the position of the line I-I' in Figure 1. Referring to FIG. 8 and FIG. 7 simultaneously, the polishing pad 500 of FIG. 8 is similar to the polishing pad 400 of FIG. 7. Therefore, the same or similar elements are denoted by the same or similar symbols, and the related description may be omitted from the foregoing. In addition, the polishing layer 510, the first adhesive layer 520a, and the second adhesive layer The 520b, the heat storage material 530, and the cladding layer 540 may be the same as or similar to those of the foregoing fourth embodiment, and thus the related description will not be repeated. Hereinafter, the difference between the two will be described.

Referring to FIG. 8, in the present embodiment, the heat storage region L in which the heat storage material 530 is disposed is located between the first adhesive layer 520a and the second adhesive layer 520b. In detail, in the present embodiment, the heat storage region L is located in the base layer 560 adjacent to the portion of the first adhesive layer 520a. That is, in the present embodiment, the heat storage region L is located below the first adhesive layer 520a. From another point of view, in the present embodiment, the base layer 560 has a thickness T, and the top edge Lt of the heat storage region L and the bottom edge Lb have a distance of T/3 to less than T.

In addition, in the present embodiment, the method of manufacturing the base layer 560 includes the step of mixing the heat storage material 530 with the material constituting the base layer 560, and the portion of the base layer 560 including the heat storage material 530 and the heat storage material is not included. Portions of 530 are, for example, combined by perfusion.

It should be noted that, in the present embodiment, since the heat storage material 530 must undergo an endothermic reaction during the polishing process, the through-polishing pad 500 includes the heat storage material 530, so that the heat generated by the mechanical friction during the polishing process can be It is absorbed by the heat storage material 530, whereby the degree of temperature rise caused by the mechanical friction of the polishing pad 500 is lowered, and the purpose of effectively lowering the temperature of the polishing pad 500 is achieved, as shown in FIG. As a result, the heat storage region L disposed with the heat storage material 530 is located in the base layer 560 adjacent to the portion of the first adhesive layer 520a, so that the first adhesive layer 520a disposed above the heat storage region L is not ground. Process During the period, problems such as deterioration, deformation, or viscosity drop due to high temperature occur to maintain the stability of the polishing process.

Further, in the present embodiment, the polishing pad 500 includes the coating layer 540 covering the heat storage material 530, but the present invention is not limited thereto. In other embodiments, where the material of the substrate layer 560 mixed with the heat storage material 530 is capable of sealing the heat storage material 530 therein, the polishing pad 500 may not include the cladding layer 540 that coats the heat storage material 530.

Further, based on the contents of the first to third and fifth embodiments, the polishing pad 500 of the fifth embodiment can adopt the same concept as the polishing pads 100 to 300 of the first to third embodiments, and the first bonding can be performed. Above the layer 520a, a heat storage region configured with a heat storage material is formed.

Further, based on the contents of the second and fifth embodiments, the polishing pad 500 of the fifth embodiment can also adopt the same concept as the polishing pad 200 of the second embodiment, and is transmitted through the polishing track area A and the non-polishing track area. A different heat storage material is disposed in B, instead of a heat storage material 530 originally disposed in the polishing track area A and the non-polishing track area B, so as to achieve the degree that the temperature of the polishing pad 500 is lowered during the polishing process. A more even effect. Incidentally, the polishing track area A generally has a higher temperature than the non-polishing track area B, and the heat storage material 530 included in the polishing pad 500 may also be disposed only in the grinding track area A, and may also be achieved. During the polishing process, the degree to which the temperature of the polishing pad 500 is lowered can be more evenly averaged.

In addition, based on the contents of the third and fifth embodiments, the fifth implementation The polishing pad 500 of the mode can also adopt the same concept design as the polishing pad 300 of the third embodiment, and the heat storage material 530 is formed in the heat storage region L to form an interface layer between the base layer and the first adhesive layer. In place of the original fifth embodiment, the heat storage material 530 is disposed to be dispersed in the material of the base layer 560 in the corresponding heat storage region L to achieve the same effect of the invention, that is, the temperature of the polishing pad 500 during the polishing process can be lowered. effect.

Figure 9 is a schematic cross-sectional view of a polishing pad in a radial direction in accordance with a sixth embodiment of the present invention. Referring to Figure 1 for a top view of the polishing pad 600 of Figure 9, the cross-sectional position of Figure 9 can be referred to the position of the line I-I' in Figure 1. Referring to FIG. 9 and FIG. 8 simultaneously, the polishing pad 600 of FIG. 9 is similar to the polishing pad 500 of FIG. 8. Therefore, the same or similar elements are denoted by the same or similar symbols, and the related descriptions may be omitted from the foregoing. In addition, the polishing layer 610, the first adhesive layer 620a, the second adhesive layer 620b, the heat storage material 630, and the cladding layer 640 may be the same as or similar to those of the foregoing fifth embodiment, and thus the related description will not be repeated. Hereinafter, the difference between the two will be described.

Referring to FIG. 9 , in the present embodiment, the heat storage region M in which the heat storage material 630 is disposed is located between the first adhesive layer 620 a and the second adhesive layer 620 b . In detail, in the present embodiment, the heat storage region M is located in the base layer 660 adjacent to the portion of the second adhesive layer 620b. That is, in the present embodiment, the heat storage region M is located above the second adhesive layer 620b. From another point of view, in the present embodiment, the base layer 660 has a thickness T, and the top edge Mt of the heat storage region M and the bottom edge Mb have a distance of T/3 to less than T.

In addition, in the present embodiment, the method of manufacturing the base layer 660 includes the step of mixing the heat storage material 630 with the material constituting the base layer 660, and the portion of the base layer 660 including the heat storage material 630 and the heat storage material is not included. Portions of 630 are, for example, combined by perfusion.

It should be noted that, in the present embodiment, since the heat storage material 630 must undergo an endothermic reaction during the polishing process, the through-polishing pad 600 includes the heat storage material 630, so that the heat generated by the mechanical friction during the polishing process can be It is absorbed by the heat storage material 630, whereby the degree of temperature rise caused by the mechanical friction of the polishing pad 600 is lowered, and the purpose of effectively lowering the temperature of the polishing pad 600 is achieved, as shown in FIG. As a result, the heat storage region M disposed with the heat storage material 630 is located in the base layer 660 adjacent to the portion of the second adhesive layer 620b, so that the second adhesive layer 620b disposed above the heat storage region M is not ground. During the process, problems such as deterioration, deformation, or viscosity drop due to high temperature occur to maintain the stability of the polishing process.

Further, in the present embodiment, the polishing pad 600 includes a coating layer 640 covering the heat storage material 630, but the present invention is not limited thereto. In other embodiments, where the material of the substrate layer 660 mixed with the heat storage material 630 can seal the heat storage material 630 therein, the polishing pad 600 may not include the cladding layer 640 that covers the heat storage material 630.

Further, based on the contents of the first to third and sixth embodiments, the polishing pad 600 of the sixth embodiment can adopt the same concept as the polishing pads 100 to 300 of the first to third embodiments, and the first bonding can be performed. The upper layer 620a is formed with a configuration The heat storage area of the heat storage material.

Further, based on the contents of the second and sixth embodiments, the polishing pad 600 of the sixth embodiment can also adopt the same concept as that of the polishing pad 200 of the second embodiment, through the polishing track area A and the non-polishing track area. A different heat storage material is disposed in B, instead of a heat storage material 630 originally disposed in the polishing track area A and the non-polishing track area B, so as to achieve the degree that the temperature of the polishing pad 600 is lowered during the polishing process. A more even effect. Incidentally, the polishing track area A generally has a higher temperature than the non-polishing track area B, and the heat storage material 630 included in the polishing pad 600 may also be disposed only in the grinding track area A, and may also be achieved. During the polishing process, the degree to which the temperature of the polishing pad 600 is lowered can be more evenly averaged.

Further, based on the contents of the third and sixth embodiments, the polishing pad 600 of the sixth embodiment can also adopt the same concept as the polishing pad 300 of the third embodiment, by allowing the heat storage material 630 to be in the heat storage region M. Forming an interfacial layer between the base layer and the second adhesive layer, instead of disposing the heat storage material 630 in the material of the base layer 660 in the corresponding heat storage region M, in the sixth embodiment, to achieve the same invention. The effect is that the temperature of the polishing pad 600 during the polishing process can be lowered.

As described above, depending on the material selected for each adhesive layer, each has a different adhesive strength, and each adhesive layer has a relatively different resistance to heat generated during the polishing process. In view of the above, according to the contents of the foregoing fifth and sixth embodiments, any person having ordinary knowledge in the art should understand that the present invention The polishing pad may also include: two heat storage regions disposed with the heat storage material in the base layer adjacent to the first adhesive layer and the base layer adjacent to the second adhesive layer, or located on the base layer Two interfacial layers between the first adhesive layer and between the base layer and the second adhesive layer.

Figure 10 is a flow chart of a polishing method in accordance with an embodiment of the present invention. This grinding method is suitable for grinding objects. In detail, the polishing method can be applied to a manufacturing process for manufacturing industrial components, such as components used in the electronics industry, which can include semiconductors, integrated circuits, MEMS, energy conversion, communication, optics, storage discs, and Components such as displays, and articles used for fabricating these components may include semiconductor wafers, III V-group wafers, storage element carriers, ceramic substrates, polymer substrates, and glass substrates, etc., but are not intended to limit the invention. range.

Referring to FIG. 10, first, step S10 is performed to provide a polishing pad. In detail, in the present embodiment, the polishing pad may be any one of the polishing pads described in the above embodiments, such as a polishing pad 100/200/300/400/500/600. The related description of the polishing pad 100/200/300/400/500/600 has been described in detail above, and thus will not be described herein.

Next, step S12 is performed to apply pressure to the object. Thereby, the article is pressed against the polishing pad and brought into contact with the polishing pad. In detail, as described above, the article will be in contact with the abrasive surface PS of the abrasive layer 110/210/310/410/510/610. Further, the manner in which the object is applied with pressure is performed, for example, using a carrier capable of holding the article.

Thereafter, proceeding to step S14, providing relative to the object and the polishing pad Movement to use the polishing pad to grind the object to achieve planarization. In detail, the method of providing relative motion to the object and the polishing pad is, for example, rotating through the carrier to drive the polishing pad fixed on the carrier to rotate.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any one of ordinary skill in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

Claims (32)

A polishing pad suitable for use in a polishing process, the polishing pad comprising: an abrasive layer having abrasive surfaces and a back surface opposite to each other; an adhesive layer disposed on the back surface of the polishing layer; and at least one heat storage material, The at least one heat storage material is disposed above the adhesive layer, wherein the at least one heat storage material comprises an inorganic heat storage material, an organic heat storage material, or a combination thereof, the inorganic heat storage material including salt hydration The organic heat storage material comprises a polyol, a fatty alcohol, a fatty acid or an alkane compound. The polishing pad of claim 1, wherein the at least one heat storage material is dispersed in a material of the polishing layer. The polishing pad of claim 1, wherein the at least one heat storage material forms an interface layer in a region where the at least one heat storage material is disposed, the interface layer being located above the adhesive layer. The polishing pad of claim 1, further comprising at least one groove disposed in the polishing surface of the polishing layer, wherein the at least one heat storage material is disposed in an area that is not A groove bottom contacts. The polishing pad of claim 4, wherein a bottom of the at least one groove has a groove depth D from the polishing surface, and a top edge of the region where the at least one heat storage material is disposed The abrasive surfaces have a distance greater than D and less than or equal to 1.5D. The polishing pad of claim 1, wherein during the polishing process, the polishing pad has a minimum temperature of T _min and a maximum temperature of T _max , wherein the at least one heat storage material is between T An endothermic reaction occurs at a temperature between _min and _Tmax . The polishing pad according to claim 6, wherein the intermolecular arrangement of the at least one heat storage material after the endothermic reaction is looser than the intermolecular arrangement before the endothermic reaction. The polishing pad of claim 6, wherein the at least one heat storage material changes from a first solid state to a second solid state due to the occurrence of the endothermic reaction, the first solid state and the first The molecular arrangement of the two solid states is different. The polishing pad of claim 1, further comprising a coating layer covering the at least one heat storage material. The polishing pad of claim 9, wherein the material of the coating layer does not chemically react with the material of the polishing layer or the at least one heat storage material. The polishing pad of claim 1, further comprising a grinding track area and a non-grinding track area, wherein the grinding track area is configured with a first heat storage material, and the non-grinding track area is configured with a second heat storage material, wherein During the polishing process, the lowest temperature of the polishing pad is T _min and the highest temperature is T _max , and the first heat storage material and the second heat storage material are respectively between T _min and T _max The endothermic reaction occurs at different temperatures. The polishing pad of claim 11, wherein the first heat storage material has an endothermic reaction temperature lower than an endothermic reaction temperature of the second heat storage material. The polishing pad of claim 11, wherein the first heat storage material absorbs heat higher than the second heat storage material. A polishing pad suitable for a polishing process, the polishing pad comprising: an abrasive layer; a substrate layer disposed under the polishing layer; a first adhesive layer disposed between the polishing layer and the substrate layer; An adhesive layer disposed under the substrate layer; and at least one heat storage material, wherein the at least one heat storage material is disposed between the first adhesive layer and the second adhesive layer, wherein the at least A heat storage material includes an inorganic heat storage material, an organic heat storage material, or a combination thereof, the inorganic heat storage material including a salt hydrate, the organic heat storage material including a polyol, a fatty alcohol, a fatty acid, or an alkane compound. The polishing pad of claim 14, wherein the base layer has a thickness T, and a distance between the top edge and the bottom edge of the region where the at least one heat storage material is disposed has a distance of T/3 to T . The polishing pad of claim 14, wherein the at least one heat storage material is dispersed in a material of the base layer. The polishing pad of claim 16, wherein the at least one heat storage material is disposed in a region encompassing the entire substrate layer or at least one of: (a) adjacent to the first The base layer of a portion of the adhesive layer; (b) the base layer adjacent to a portion of the second adhesive layer. The polishing pad of claim 14, wherein the at least one heat storage material forms an interface layer in a region where the at least one heat storage material is disposed, the interface layer being located in at least one of the following positions (c) between the base layer and the first adhesive layer; (d) between the base layer and the second adhesive layer. The polishing pad of claim 14, wherein during the polishing process, the polishing pad has a minimum temperature of T _min and a maximum temperature of T _max , wherein the at least one heat storage material is between T An endothermic reaction occurs at a temperature between _min and _Tmax . The polishing pad of claim 19, wherein the intermolecular arrangement of the at least one heat storage material after the endothermic reaction is looser than the intermolecular arrangement prior to the endothermic reaction. The polishing pad of claim 19, wherein the at least one heat storage material changes from a first solid state to a second solid state due to the occurrence of the endothermic reaction, the first solid state and the first The molecular arrangement of the two solid states is different. The polishing pad of claim 14, further comprising a coating layer covering the at least one heat storage material. The polishing pad of claim 22, wherein the material of the coating layer does not chemically react with the material of the substrate layer or the at least one heat storage material. The polishing pad of claim 14, further comprising a grinding track area and a non-grinding track area, wherein the grinding track area is configured with a first heat storage material, and the non-grinding track area is configured with a second heat storage material, wherein During the polishing process, the lowest temperature of the polishing pad is T _min and the highest temperature is T _max , and the first heat storage material and the second heat storage material are respectively between T _min and T _max The endothermic reaction occurs at different temperatures. The polishing pad of claim 24, wherein the first heat storage material has an endothermic reaction temperature lower than an endothermic reaction temperature of the second heat storage material. The polishing pad of claim 24, wherein the first heat storage material absorbs heat higher than the second heat storage material. A grinding method, which is suitable for grinding an article, comprising: providing a polishing pad, such as the polishing pad of any one of claims 1 to 13; applying pressure to the article to press And polishing the substrate and the polishing pad to perform the grinding process. A polishing method, which is suitable for abrading articles, comprising: providing a polishing pad, such as the polishing pad of any one of claims 14 to 26; applying pressure to the article to press And polishing the substrate and the polishing pad to perform the grinding process. A polishing pad suitable for use in a polishing process, the polishing pad comprising: an abrasive layer having abrasive surfaces and a back surface opposite to each other; an adhesive layer disposed on the back surface of the polishing layer; and at least one heat storage material, The area where the at least one heat storage material is disposed is located above the adhesive layer, wherein during the polishing process, the polishing pad has a minimum temperature of Tmin and a maximum temperature of Tmax, wherein the at least one heat storage material is An endothermic reaction occurs at a temperature between Tmin and Tmax, and an intermolecular arrangement of the at least one heat storage material after the endothermic reaction is looser than an intermolecular arrangement before the endothermic reaction. A polishing pad suitable for use in a polishing process, the polishing pad comprising: an abrasive layer having abrasive surfaces and a back surface opposite to each other; an adhesive layer disposed on the back surface of the polishing layer; and at least one heat storage material, The area where the at least one heat storage material is disposed is located above the adhesive layer, wherein during the polishing process, the polishing pad has a minimum temperature of Tmin and a maximum temperature of Tmax, wherein the at least one heat storage material is An endothermic reaction occurs between temperatures between Tmin and Tmax, and At least one heat storage material transitions from a first solid state to a second solid state due to the occurrence of the endothermic reaction, the first solid state being different from the molecular arrangement of the second solid state. A polishing pad suitable for a polishing process, the polishing pad comprising: an abrasive layer; a substrate layer disposed under the polishing layer; a first adhesive layer disposed between the polishing layer and the substrate layer; An adhesive layer disposed under the substrate layer; and at least one heat storage material, wherein the at least one heat storage material is disposed between the first adhesive layer and the second adhesive layer, wherein During the polishing process, the polishing pad has a minimum temperature of Tmin and a maximum temperature of Tmax, wherein the at least one heat storage material undergoes an endothermic reaction at a temperature between Tmin and Tmax, and the at least one heat storage material is The intermolecular arrangement after the endothermic reaction is looser than the intermolecular arrangement before the endothermic reaction. A polishing pad suitable for use in a polishing process, the polishing pad comprising: an abrasive layer having abrasive surfaces and a back surface opposite to each other; an adhesive layer disposed on the back surface of the polishing layer; and at least one heat storage material, The area where the at least one heat storage material is disposed is located above the adhesive layer, wherein during the polishing process, the polishing pad has a minimum temperature of Tmin and a maximum temperature of Tmax, wherein the at least one heat storage material is An endothermic reaction occurs between temperatures between Tmin and Tmax, and the at least one heat storage material transitions from the first solid state due to the endothermic reaction occurring In the second solid state, the first solid state is different from the molecular arrangement of the second solid state.