TW442360B

TW442360B - CMP device with temperature control

Info

Publication number: TW442360B
Application number: TW87102659A
Authority: TW
Inventors: Chi-Fa Lin
Original assignee: Winbond Electronics Corp
Priority date: 1998-02-24
Filing date: 1998-02-24
Publication date: 2001-06-23

Abstract

This invention relates to a chemical mechanical polishing (CMP) device with temperature, utilizing a heating device to heat the storage device for object to be polished, the transporting device, the polishing pad, and the tray to a set temperature, and precisely controlling the temperature of whole system by a central temperature control unit, to obtain the best chemical mechanical polishing result.

Description

經濟部中央標準局員工消費合作社印繁 ^4^2 36 0 _ 五、發明説明（l ) — 本發明係有關於一種化學機械研磨製程之溫度控制裝置，用以改善化學機械研磨結果。在極大型積體電路（ULSI)或液晶顯示器（LCD)，或矽晶圓研磨製程中，所使用的平坦化技術中，常用化學機械研磨法。它使用了如第i圖所示的方式，使ULSI之半導體基板' 矽晶圓（或LCD之透明基板）12的表面，與有加研磨液11的研磨墊13表面接觸，利用機械切削力與化學研磨液的化學作用’來削平基板12表面因電路圖形所造成的兩低起伏。然而傳統的化學機械研磨設備，皆著重在研磨墊片 13、托盤14的幾何形狀設計、以及化學研磨液丨丨化學成伤做改良研究，對於影響化學反應速率相當重要的「溫度控制」部份’皆無重要之改善。有鑑於此’.本發明之目的在於對化學機械研磨裝置作精確的全系統溫度控制，以得到最好的化學機械研磨結果。對化學機械研磨製程而言，化學反應的控制，為決定製程結果的重要因素，其中關於被研磨物之溫度與均勻度的控制’將影響化學反應的活性，因而導致不同的反應速率’本發明即在提昇與被研磨物相接觸之系統溫度的控制能力，以改善化學機械研磨的結果。本發明之具溫度控制之化學機械研磨裝置包括儲存裝置、研磨墊、傳送裝置、托盤、以及加熱裝置。其中被研磨物儲存在儲存裝置内，而傳送裝置將被研磨物從 {請先閱讀背面之注意事項再填寫本頁} —- . 訂本紙狀度適财關tm- ( CNS ) a7^ (ITo^Tg?^ 經濟部中央標嗥局員工消費合作社印製 y 442 36 Q ab] 五、發明説明（2 ) ~~ ~ _~^-— 儲存裝置取出並送至研磨墊上，在研磨墊上塗有研磨液，托盤固持著被研磨物，並使被研磨物在研磨墊上以化學機械法研磨；而加熱裝置可將儲存裝置、研磨墊、傳送襞置及托盤加熱至一既定溫度，以改善化學機械研磨結果。本發明尚包括一中央溫控儀，連接於上述儲存裝置、傳送裝置、研磨墊、托盤、研磨液、及加熱裝置，用於控制加熱裝置，而將儲存裝置、傳送裝置、研磨墊、研磨液、及托盤準確的加熱並保持在既定溫度。本發明所採用溫度範圍，取決於機台零件溫度忍受度、及研磨液有效使用溫度，故為0〜100 1皆適用，但主要著重以下要點： [1] .較高的溫度’可提高化學反應速率，進而提高研磨速率’因為依據亞儉尼爾斯（Arrhenius)化學反應方程式：化學反應速率K正比於e_Q/RT ’其中Q代表反應的活化能之常數’ R為理想氣體常數，T為絕對溫度。 [2] .必須使基板輸入研磨系統的所有部分，保持於恆溫狀態，避免因溫度差造成之降溫效應不均勻，而破壞研磨速率及均勻度。 [3] _利用各種機械及幾何設計方法儘可能提昇溫度分佈均勻度。综合以上考量，本發明所採用之較佳溫度大約在 20〜80 eC。圖式之簡單說明：本紙乐尺度適用中國國家標準（CNS ) Μ現格（210X297公釐） <铕先閱讀背面之注意事項#填寫本頁) I裝· 442360 A 7 B7 五'發明説明（3) 第1圖係化學機械研磨設備之示意圖；第2A圖顯示本發明之熱控制的儲存裝置之第一應用例；第2B圖顯示本發明之熱控制的儲存裝置之第二應用例；第2C圖顯示本發明之熱控制的儲存裝置之第三應用例；第3A圖顯示本發明之熱控制之機械手臂；第3B圖顯示本發明之熱控制傳送路線之第一應用例；第3C圖顯示本發明之熱控制傳送路線之第二應用例；第4A圖顯示本發明之熱控制研磨墊之第一應用例；第4B圖顯示本發明之熱控制研磨墊之第二應用例；第4C圖顯示本發明之熱控制研磨墊之第三應用例；第4D圖顯示本發明之熱控制研磨墊之第四應用例；第4E圖顯示本發明之熱控制研磨墊之第五應用例。第5圖顯示本發明以_中央溫控儀作全系統溫度控制。標號說明： 11研磨液 12基板本紙張尺度適用中國國家標準（cns ---------装------訂------次I · (請先閱讀背面之^意事項再填艿本頁) 經濟部中央標準局員工消費合作社印繁 f 442 3 6 〇 A7 B7 五、發明説明（4) 13 研磨墊 14 托盤 21 基板 22 晶舟室 23 紅外線加熱源 24 熱氣管路 25 輸送皮帶 26 預熱槽 27 輸送槽 31 機械手臂 32 熱線圈 36 研磨塾 37 管線 38 研磨墊 39 管線 40 轉盤 41 研磨墊 401 内本體 402外本體 403 隔板 (諳先閲讀背面之注意事項再填寫本頁) —装茲配合圖面說明本發明之較佳實施例。本發明可適用於極大型積體電路（ULSI)之半導體基板、矽晶圓以及液晶顯示器（LCD)之透明基板的研磨。由於使用化學機械研磨法牽涉到基板儲存、基板傳送、及基板研磨等過程，本發明針對以上過程實施溫度控制，以提升研磨製程的平坦度、速率、及均勻度，進而全面提升研磨製程的品質與產量。茲將化學機械研磨製程的溫控分述如下： 1 ·熱控制的儲存裝置請參閱第2 A-2C圖，當基板21放入晶舟室22後，即利用升溫的恆温控制裝置，使基板提升至適當溫度與均勻度’以提高在化學機械研磨時之化學活性。第2A圖顯示熱控制的儲存裝置之第一應用例，在晶舟至22四周裝設數個紅外線加熱源23，用以對晶舟室 6 ) Λ4規格（ΤΪ0 Χ297公-—---Yin Fan, a Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs ^ 4 ^ 2 36 0 _ V. Description of the Invention (l)-The present invention relates to a temperature control device for a chemical mechanical polishing process to improve chemical mechanical polishing results. In the ultra-large-scale integrated circuit (ULSI), liquid crystal display (LCD), or silicon wafer polishing process, chemical mechanical polishing is commonly used in the planarization technology. It uses the method shown in Figure i to bring the surface of ULSI's semiconductor substrate 'silicon wafer (or transparent substrate of LCD) 12 into contact with the surface of polishing pad 13 with polishing liquid 11 and use mechanical cutting force to contact The chemical action of the chemical polishing liquid is used to flatten the two low fluctuations on the surface of the substrate 12 caused by the circuit pattern. However, the traditional chemical mechanical polishing equipment focuses on the geometric design of the polishing pad 13, the tray 14, and the chemical polishing fluid. Improvement studies on chemical damage are important "temperature control" parts that affect the chemical reaction rate. 'No significant improvement. In view of this, the object of the present invention is to perform accurate system-wide temperature control of the chemical mechanical polishing device to obtain the best chemical mechanical polishing results. For the chemical mechanical polishing process, the control of chemical reactions is an important factor in determining the results of the process. Among them, the control of the temperature and uniformity of the object to be milled will affect the activity of the chemical reaction, thus leading to different reaction rates. That is to improve the temperature control ability of the system in contact with the object to be abraded to improve the result of chemical mechanical polishing. The chemical mechanical polishing device with temperature control of the present invention includes a storage device, a polishing pad, a conveying device, a tray, and a heating device. The abrasives are stored in the storage device, and the conveying device removes the abrasives from {Please read the precautions on the back before filling in this page} —-. The form of the paper is suitable for financial management tm- (CNS) a7 ^ (ITo ^ Tg? ^ Printed by the Consumer Cooperatives of the Central Bureau of Standards, Ministry of Economic Affairs y 442 36 Q ab] V. Description of the Invention (2) ~~ ~ _ ~ ^ -— The storage device is taken out and sent to the polishing pad, and the polishing pad is coated with Grinding liquid, the tray holds the object to be ground, and the object to be ground is chemically and mechanically ground on the polishing pad; and the heating device can heat the storage device, the polishing pad, the conveying set and the tray to a predetermined temperature to improve the chemical machinery Grinding results. The present invention also includes a central temperature controller connected to the storage device, transfer device, polishing pad, tray, polishing liquid, and heating device, which is used to control the heating device, and the storage device, transfer device, and polishing pad , Grinding liquid, and tray are accurately heated and maintained at a predetermined temperature. The temperature range used in the present invention depends on the temperature tolerance of the machine parts and the effective use temperature of the grinding liquid, so 0 ~ 100 1 is suitable Use, but mainly focus on the following points: [1]. Higher temperature 'can increase the chemical reaction rate, and then improve the grinding rate', because according to the Arrhenius chemical reaction equation: the chemical reaction rate K is proportional to e_Q / RT 'where Q represents the constant of the activation energy of the reaction' R is the ideal gas constant and T is the absolute temperature. [2]. All parts of the substrate input system must be kept at a constant temperature to avoid the cooling effect caused by the temperature difference. Non-uniformity, which destroys the grinding rate and uniformity. [3] _Using various mechanical and geometric design methods to improve the uniformity of temperature distribution as much as possible. Based on the above considerations, the preferred temperature used in the present invention is about 20 ~ 80 eC. Figure A simple explanation of the formula: The paper scale is applicable to the Chinese National Standard (CNS). The current standard is 210X297 mm. &Lt; Please read the notes on the back first # Fill this page) I. · 442360 A 7 B7 Five 'invention description (3 ) Figure 1 is a schematic diagram of a chemical mechanical polishing equipment; Figure 2A shows a first application example of a thermally controlled storage device of the present invention; Figure 2B shows a thermal control of the present invention The second application example of the storage device; Fig. 2C shows the third application example of the thermally controlled storage device of the present invention; Fig. 3A shows the thermally controlled mechanical arm of the present invention; and Fig. 3B shows the thermally controlled transmission route of the present invention. The first application example; FIG. 3C shows the second application example of the thermal control transmission route of the present invention; FIG. 4A shows the first application example of the thermal control polishing pad of the present invention; and FIG. 4B shows the thermal control polishing of the present invention The second application example of the pad; FIG. 4C shows the third application example of the thermally controlled polishing pad of the present invention; FIG. 4D shows the fourth application example of the thermally controlled polishing pad of the present invention; and FIG. 4E shows the thermal control of the present invention The fifth application example of the polishing pad. Fig. 5 shows that the present invention uses a central temperature controller for system-wide temperature control. Explanation of symbols: 11 abrasive liquid 12 substrate This paper size applies to Chinese national standards (cns --------- installation ------ order ------ time I · (Please read the back of ^ Please fill in this page again) Yin Fan f 442 3 6 〇A7 B7 Employee Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (4) 13 Polishing pad 14 Tray 21 Substrate 22 Wafer chamber 23 Infrared heating source 24 Hot air pipe Road 25 Conveyor belt 26 Preheating slot 27 Conveying slot 31 Robot arm 32 Thermal coil 36 Grinding pad 37 Line 38 Grinding pad 39 Line 40 Turntable 41 Grinding pad 401 Inner body 402 Outer body 403 Partition (谙 Read the precautions on the back before (Fill in this page) —A description of the preferred embodiment of the present invention is given in conjunction with the drawings. The present invention can be applied to the polishing of semiconductor substrates, silicon wafers, and transparent substrates of liquid crystal displays (LCDs) in very large integrated circuits (ULSI) Since the use of chemical mechanical polishing involves substrate storage, substrate transfer, and substrate polishing, the present invention implements temperature control for the above processes to improve the flatness, rate, and uniformity of the polishing process. Comprehensively improve the quality and output of the grinding process. The temperature control of the chemical mechanical grinding process is described as follows: 1 · Please refer to Figure 2 A-2C for the thermally controlled storage device. When the substrate 21 is placed in the boat chamber 22, Utilizing a constant temperature control device to raise the temperature to a proper temperature and uniformity to increase the chemical activity during chemical mechanical polishing. Figure 2A shows the first application example of a thermally controlled storage device. Set a number of infrared heating sources 23 for the wafer boat room 6) Λ4 size (ΤΪ0 × 297 公 —----

，1T 經濟部中央標準局貝工消f合作社印製 I I—― 44238η ^ -- B7 經濟部中央標準局負工消費合作杜印繁五、發明説明（5) 22内的基板21照射’使基板21溫度上升，晶舟室22可以石英製成’使紅外線能穿透。第2B圖顯示熱控制的儲存裝置之第二應用例，在晶舟室22四周裝設管路24，且在管路24上開設數個孔洞，用以對晶舟室22喷出熱氣’使晶舟室22内的基板21在熱氣氛下’達到預定的溫度。第2C圖顯示熱控制的儲存裝置之第三應用例，此例係直接將裝有基板之晶舟室浸於熱液體中，使基板21達到並保持在預定的溫度，該熱液體可為研磨時所使用的研磨液（slurry)或去離子水。 2.熱控制的傳送路線熱系統基板傳送到研磨托盤的路線，必須保持恆溫控制，其傳遞方式有機械傳遞法、或經由以高壓液體為載體來傳送等方式，惟必須確保基板傳送到研磨托盤的路線的恆溫控制，此可透過熱氣氛，熱液體’熱線圈，紅外線加熱源等方式精確控制溫度及均勻度，以提高化學機械研磨製程之化學活性與均勻度。將基板由前述晶舟室取出，或者是將基板放在研磨機台上皆利用機械手臂來完成，請參閱第3八圖，機械手臂31内設有熱線圈32，用以加熱機板接觸時能保持基板的溫度。在，、基請參閲第3B圖，其顯示熱控制傳送路線之第一應用例，機械手臂將基板2丨由晶舟室22取出，然後放於輸送皮帶25上輸送，輸送皮帶25可用前述之熱氣氛或紅 7 裝— , --訂 (請先閏讀背面之"'意事項再填寫本頁〕本纸張尺度適用中國國家標率（CNS) Ai4現格（210x297公舞）經濟部中央樣準局買工消費合作社印裂 4 42 3 6 〇 A7 Γ~~·----Β7 五、發明説明（6) 外線加熱源預熱之。第3C圖顯示熱控制傳送路線之第二應用例，其中晶舟室22係浸於含熱液體之預熱槽26中，一輸送槽27與預熱槽20頂部相接，使輸送槽27中亦裝有熱液體，而輸送皮帶25設置在輸送槽27中，用以輸送浸泡於熱液體中的基板21。 3·熱控制的研磨墊由於基板研磨部與研磨墊直接接觸，故而這方面的溫控尤為重要’須精確控制整個研磨墊面均勻溫度。請參閱第4A圖’其顯示本發明之熱控制研磨墊之第一應用例，其中，在研磨墊36底下設置放射狀之管線37，此管線37可為熱氣管路或熱線圈，用以均勻加熱研磨墊 36。第4B圖顯示本發明之熱控制研磨墊之第二應用例，其中’在研磨墊38底下設置的管線39為同心圓狀，此種同心圓的配置方式亦能均勻加熱研磨墊。第4C圖顯示本發明之熱控制研磨墊之第三應用例，其中，在研磨墊底下設置放射狀加上同心圓狀的管線而成。第4D圖顯示本發明之熱控制研磨墊之第四應用例，其中，在研磨塾底下設置格狀加上同心圓狀的管線而成。以上管線的配置形狀皆可使加熱均勻。請參閱第4E圖，其顯示本發明之熱控制研磨墊之第五應用例，其係在轉盤40内部引進熱流體，藉以均勻加熱設在上面的研磨墊41。轉盤40具有中空的内本體4〇1 及外本體402 ’内本體401的内部以複數個隔板4〇3隔 8 本紙張尺度適用中國固家標孪（CNS ) Λ4規格（210X297公龙） ^^^1 1^1 n ^^^1 i f · n^i ^^^1 t^n ^^^1 ―V -s" (1*先閱讀背面之注意事項再填寫本頁) Μ 442 3 6 0 五、發明説明（7) 開’且在每一隔板403上開設有複數個孔洞，圖中箭頭顯示前述熱流體之流動狀態，熱流體被引入内本體40 1 後，經由孔洞而通過層層的隔板403使熱分佈較為均勻，熱流體在流出内本體401後便接觸於外本體402，並將熱傳給研磨墊41，然後反折向下流動，最後由外本體402 的底部引出。而該研磨墊41上，得視情況加入適量的潤展液。 4. 熱控制的托盤由於基板與托盤亦直接接觸，故而這方面的溫控同樣重要，須精確控制整個研磨墊面均勻溫度，可透過熱線圈方式預熱，其設計與前項熱控制研磨墊相同，如第 4A〜4E圖所示，可採用放射狀、同心圓狀、放射狀加上同心圓狀、或格狀加上同心圓狀的管線等。 5. 整合的基板接觸系統熱控制將化學機械研磨CMP系統中與基板接觸部視為一全系統的概念’利用精確的熱溫控儀使整個研磨系統維持恆溫’經由整合的中央溫控儀（如第5圖）輸入與調整研磨系統的溫度設定值’保持輸入系統的物質溫差必須愈小愈好（例如：$ 2 °C )’並視系統的忍受度而提高整個系統溫度以提升化學反應的活性，增快反應速率，同時由於溫差的降低可使系統的熱平衡維持較穩定，而得以產生最好的化學機械研磨結果。經由整合的中央溫控儀，輸入與調整研磨系統的溫度設定值’吾人得到最有效率，最快速的溫度設定值， 9 本紙張尺度適用中國國家標华（CNS ) Λ4現格（21GX297公楚) ~~---- ---------ΐ衣—— (請先閱讀背面之注意事項再填辑本頁) 丁 *-° 經濟部中央標準局員工消費合作社印製 442 36 Q___ab；五、發明説明（8 ) 避免過分的溫度失衡及升溫速率不均等造成的干擾，經由此一整合控制的熱平衡系統，可以提高化學機械研磨製程的控制精確度，減少溫度梯度差以得到最佳的製程結果。而本發明所揭示之化學機械研磨裝置，其研磨標的（被研磨物），可為晶圓、積體電路（VLSI)或是液晶顯示器（LCD)__等。而常用於積體電路之平坦化製程中。雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此項技藝者，在不脫離本發明之精神和範圍内，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。 ϋ n - n ---1 n I 种衣--I ί - I n ^ * · (讀先閱讀背面之注意事項再填寫本頁} 經濟部中央標準局員工消費合作社印裝本紙張尺度適用中國國家標準（CNS ) Λ4規格（210 X 297公釐） ----一__, 1T Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Cooperative Printing II—44238η ^-B7 Duan Fan, Central Laboratories of the Ministry of Economic Affairs, Consumption Cooperation Du Yinfan 5. Description of the Invention (5) Substrate 21 in 22 illuminates the substrate 21 When the temperature rises, the boat chamber 22 can be made of quartz to allow infrared rays to pass through. FIG. 2B shows a second application example of the thermally controlled storage device. A pipeline 24 is installed around the boat chamber 22, and a plurality of holes are opened in the pipeline 24 for spraying hot gas to the boat chamber 22. The substrate 21 in the wafer boat chamber 22 reaches a predetermined temperature in a hot atmosphere. Figure 2C shows a third application example of the thermally controlled storage device. This example directly immerses the wafer boat with the substrate in a hot liquid, so that the substrate 21 reaches and maintains a predetermined temperature. The hot liquid can be ground. Slurry or deionized water used at the time. 2. Thermally controlled transfer route The route for transferring the substrate of the thermal system to the polishing tray must be controlled at a constant temperature. The transfer method includes mechanical transfer method or transfer using high-pressure liquid as a carrier. However, it must ensure that the substrate is transferred to the polishing tray. The constant temperature control of the route can accurately control the temperature and uniformity through the hot atmosphere, hot liquid 'thermal coil, infrared heating source and other methods to improve the chemical activity and uniformity of the chemical mechanical polishing process. The substrate is taken out from the wafer boat chamber mentioned above, or the substrate is placed on the polishing machine table using a mechanical arm. Please refer to Figure 38. The mechanical arm 31 is provided with a thermal coil 32 for heating the plate when it is in contact. Can maintain the temperature of the substrate. Here, please refer to FIG. 3B, which shows the first application example of the thermal control transmission route. The robot arm takes the substrate 2 丨 from the boat chamber 22, and then transports it on the conveyor belt 25. The conveyor belt 25 can be used as described above. Hot atmosphere or red 7 pack —,-order (please read the "quotation on the back" and fill in this page first) This paper size is applicable to China National Standards (CNS) Ai4 standard (210x297 public dance) Economy The Central Procurement Bureau of the Ministry of Foreign Affairs and the Consumers Cooperatives printed a crack 4 42 3 6 〇A7 Γ ~~ · ---- B7 V. Description of the invention (6) Preheating the outside heating source. Figure 3C shows the first part of the thermal control transmission route. Two application examples, in which the boat chamber 22 is immersed in a preheating tank 26 containing hot liquid, a conveying tank 27 is connected to the top of the preheating tank 20, so that the hot liquid is also contained in the transporting tank 27, and the transporting belt 25 It is set in the conveying tank 27 for conveying the substrate 21 immersed in the hot liquid. 3. Thermally controlled polishing pads Since the substrate polishing part is in direct contact with the polishing pads, the temperature control in this respect is particularly important. Uniform surface temperature. Please refer to Figure 4A, which shows the thermal control of the present invention. A first application example of manufacturing a polishing pad, wherein a radial line 37 is provided under the polishing pad 36, and this line 37 may be a hot gas pipe or a thermal coil for uniformly heating the polishing pad 36. FIG. 4B shows the present invention. A second application example of a thermally controlled polishing pad, in which the pipeline 39 provided under the polishing pad 38 is concentric, and this concentric circle configuration can also uniformly heat the polishing pad. Figure 4C shows the thermally controlled polishing of the present invention. A third application example of the pad, wherein radial and concentric circular pipelines are provided under the polishing pad. Figure 4D shows a fourth application example of the thermally controlled polishing pad of the present invention, in which the The grid is formed by adding concentric circular pipelines. The configuration shapes of the above pipelines can make the heating uniform. Please refer to FIG. 4E, which shows a fifth application example of the thermal control polishing pad of the present invention, which is inside the turntable 40. The hot pad is introduced to uniformly heat the polishing pad 41 provided thereon. The turntable 40 has a hollow inner body 401 and an outer body 402. The inside of the inner body 401 is separated by a plurality of partitions 403. The paper size is applicable. Guogu Family Standard Twin (CNS) Λ4 specification (210X297 male dragon) ^^^ 1 1 ^ 1 n ^^^ 1 if · n ^ i ^^^ 1 t ^ n ^^^ 1 ―V -s " (1 (Please read the precautions on the back before filling this page) Μ 442 3 6 0 V. Description of the invention (7) Open and each hole 403 is provided with a plurality of holes, the arrow in the figure shows the flow state of the aforementioned hot fluid After the hot fluid is introduced into the inner body 40 1, the heat distribution is made more uniform through the layers of the partition 403 through the holes. After the hot fluid flows out of the inner body 401, it contacts the outer body 402 and transfers the heat to the polishing pad 41. , Then fold back and flow down, and finally come out from the bottom of the outer body 402. On the polishing pad 41, an appropriate amount of a lubricant may be added as appropriate. 4. The thermally controlled tray is also in direct contact with the substrate. Therefore, temperature control in this area is equally important. It is necessary to accurately control the uniform temperature of the entire polishing pad surface. It can be preheated by means of a thermal coil. Its design is the same as the thermal control polishing pad described above. As shown in Figures 4A to 4E, radial, concentric, radial and concentric circles, or grid-shaped and concentric circular pipelines can be used. 5. Integrated substrate contact system thermal control The contact between the substrate and the substrate in the chemical mechanical polishing CMP system is regarded as a system-wide concept of 'using an accurate thermal temperature controller to maintain the entire polishing system at a constant temperature' via an integrated central temperature controller ( (Figure 5) Enter and adjust the temperature setting value of the grinding system. 'Keep the temperature difference of the material in the input system as small as possible (eg: $ 2 ° C)' and increase the temperature of the entire system to increase the chemical reaction depending on the tolerance of the system. The faster the reaction rate, and the lower the temperature difference, the more stable the thermal balance of the system, which can produce the best CMP results. Through the integrated central temperature controller, input and adjust the temperature setting value of the grinding system. 'We get the most efficient and fastest temperature setting value. 9 This paper size is applicable to China National Standards (CNS) Λ4 grid (21GX297) ) ~~ ---- --------- ΐ 衣 —— (Please read the notes on the back before editing this page) Ding *-° Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 442 36 Q___ab; 5. Description of the invention (8) Avoid excessive interference caused by temperature imbalance and uneven heating rate. Through this integrated control, the thermal balance system can improve the control accuracy of the chemical mechanical polishing process and reduce the temperature gradient difference to get the most Good process results. The chemical mechanical polishing device disclosed in the present invention may be a wafer, an integrated circuit (VLSI), or a liquid crystal display (LCD). It is often used in the planarization process of integrated circuits. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some changes and retouching without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. ϋ n-n --- 1 n I clothing --I ί-I n ^ * · (Read the precautions on the back before filling out this page} Printed on paper by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs. National Standard (CNS) Λ4 Specification (210 X 297 mm) ----_

Claims

riHiv Printing Policy of Employee Consumer Cooperatives, Central Standards Bureau, Ministry of Economic Affairs

1. —A kind of chemical mechanical polishing device with temperature control, including: a polishing pad, and a polishing liquid is provided on the polishing pad; a tray, which holds an object to be abrasive, and makes the object to be chemically mechanically placed on the abrasive pad; And a heating device to heat the tray to a predetermined temperature so that the polishing pad, the tray, and the object to be ground are maintained in a constant temperature state within two degrees Celsius. 2. The chemical-mechanical polishing device with temperature control according to item 1 of the scope of patent application, further comprising a storage device for storing the object to be ground, and a storage device for taking the object from the storage device. And transmitting to the conveying device on the polishing pad, and the heating device further comprises heating the storage device and the conveying device to the predetermined temperature. 3. The chemical mechanical polishing device with temperature control according to item 1 or 2 of the scope of patent application, wherein the predetermined temperature is 20 ~ 80 ° C. 4. The chemical mechanical polishing device with temperature control according to item 2 of the scope of patent application, wherein the storage device is made of quartz, and the heating device is an infrared heating source, which is arranged around the storage device for heating The object to be ground stored in the storage device. 5. The chemical-mechanical polishing device with temperature control as described in item 2 of the scope of patent application, wherein the heating device is a hot gas pipeline, which is arranged around the storage device and is used to spray hot air to heat and store in the storage device. Inside the object to be ground. 6. The chemical mechanical polishing device with temperature control according to item 2 of the scope of patent application, wherein the heating device is a preheating tank storing hot liquid, and the storage device is immersed in the preheating tank for Store it in this storage container (please read the precautions on the back before filling this page). The size of the paper is applicable to China National Standards (CNS) A4 (210X297 mm) r 442360 6. Application scope

Abrasives in the printed collections of the Work and Consumer Cooperatives of the Central Bureau of Standards, the Ministry of Economic Affairs. 7_ The chemical mechanical grinding dress with temperature control as described in item 2 of the patent application scope of the application, wherein the conveying device includes a robot arm, and the heating device is a heating coil, which is arranged in the robot arm to heat the Mechanical arm. 8. The chemical mechanical polishing device with temperature control according to item 2 of the scope of the patent application, wherein the conveying device includes a conveying belt, and the heating device is an infrared heating source, which is arranged around the conveying belt for heating A conveying belt for conveying the object to be ground. 9. The chemical-mechanical polishing device with temperature control as described in the second item of the scope of Shenying's patent, wherein the conveying device includes a conveying belt, and the heating device is a hot gas pipeline, which is arranged around the conveying belt for spraying. The hot air is emitted to heat the conveying belt that conveys the object to be ground. 10. The chemical mechanical polishing device with temperature control according to item 2 of the scope of patent application, wherein 'the heating device is a conveying tank storing a hot liquid, and the conveying device includes a conveying belt provided in the conveying tank. . 11 ‘The chemical mechanical polishing device with temperature control as described in item 1 of the scope of the patent application, wherein the heating device is a hot gas pipe or a thermal coil and is provided under the polishing pad to uniformly heat the polishing pad. 12. The chemical mechanical polishing device with temperature control as described in item 11 of the scope of the patent application, wherein the heating device is radial. 13_ The chemical-mechanical polishing device with temperature control according to item 11 in the scope of the patent of Shenyin, wherein the heating device is concentric. 14_ Chemicals with temperature control as described in item 11 of the scope of patent application 210-29 ^-} ---- Please read first Back 5: I i Order

r 44236 〇 6. Scope of patent application Mechanical grinding device, in which the heating device is radial plus concentric circles. 15. The chemical mechanical polishing device with temperature control as described in item 11 of the scope of patent application, wherein the heating device is in the shape of a grid plus concentric circles. 16. The chemical mechanical polishing device with temperature control according to item 1 of the scope of the patent application, wherein the heating device is provided under the polishing pad, the heating device includes a hollow inner body and an outer body, and a hot liquid is supplied by the After the inner body is introduced into the heating device, the inner body is led out from the outer body for uniformly heating the grinding mill. 17. The chemical mechanical polishing device with temperature control according to item 16 of the scope of the patent application, wherein the inside of the inner body is separated by a plurality of partitions, and a plurality of holes are provided in each partition. After the hot liquid is introduced into the inner vessel, the heat distribution is uniformed through the layers of the partitions through the holes. 18. The chemical mechanical grinding device with temperature control according to item 1 of the scope of the patent application, wherein the heating device is a hot gas pipe or a thermal coil and is provided in the tray to uniformly heat the tray. 19. The chemical mechanical polishing device with temperature control according to item 18 of the scope of application for a patent, wherein the heating device is radial. 20. The chemical mechanical polishing device with temperature control according to item 18 of the scope of the patent application, wherein the heating device has a concentric circle shape. 21. The chemical mechanical polishing device with temperature control according to item 18 of the scope of patent application, wherein the heating device is radial plus concentric circles. 22. The chemical mechanical polishing device with temperature control according to item 18 of the scope of the patent application, wherein the heating device is in the shape of a grid plus concentric circles. In use _ house standard (CNS) Α department # (21GX297 mm) — ——; ---------------—, π —------ f.- (Please (Please read the note on the back of the page before filling in this page.) Printed by the Central Consumer Bureau of the Ministry of Economic Affairs, Consumer Work Cooperative, 44236ο Α8 Β8 C8 D8

Inkmaker of the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperatives • Patent application scope 23. The chemical mechanical polishing device with temperature control as described in item 1 of the patent application scope, wherein the object to be polished is a semiconductor of a very large integrated circuit Substrate. 24. The chemical mechanical polishing device with temperature control as described in item 1 of the scope of the patent application, wherein the object to be polished is a transparent substrate of a liquid crystal display. 25. A chemical mechanical polishing device with temperature control, comprising: a polishing pad, and a polishing liquid is provided on the polishing pad; a tray, which holds an object to be polished, and makes the object to be polished on the polishing pad by chemical mechanical method Grinding; heating device, heating the tray to a predetermined temperature; a central temperature controller connected to the polishing pad, the tray, the polishing liquid, and the heating device for controlling the heating device to heat the polishing pad and the tray to The predetermined temperature. 26. The chemical mechanical polishing device with temperature control according to item 25 of the scope of patent application, wherein the predetermined temperature is 20 to 80 ° C. 27. The chemical-mechanical polishing device with temperature control according to item 25 of the scope of the patent application, wherein the heating device is a hot air pipe or a thermal coil and is arranged under the polishing pad to uniformly heat the polishing pad. 28. The chemical mechanical polishing device with temperature control as described in item 27 of the scope of application for a patent, wherein the heating device is radial. 29. The chemical mechanical polishing device with temperature control as described in item 27 of the scope of the patent application, wherein the heating device is concentric. 30. The chemical mechanical polishing device with temperature control as described in item 27 of the scope of patent application, wherein the heating device has a radial shape and a concentric circle shape. (Please read the precautions on the back before filling out this page) This paper size is applicable to China National Standard (CNS) A4 specification (2 丨 0 X 297 mm)

Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, 31 ′ The chemical mechanical grinding device with temperature control as described in item 27 of the scope of patent application, wherein the heating device is in the shape of a grid plus concentric circles. 32. The chemical-mechanical polishing device with temperature control according to item 25 of the scope of patent application, wherein the heating device is disposed under the polishing pad, the heating device includes a hollow inner body and an outer body, and a hot liquid is supplied by the After the inner body is introduced into the heating device, the inner body is led out from the outer body for uniformly heating the grinding mill <. 33. The chemical mechanical polishing device with temperature control according to item 32 of the scope of patent application, wherein the inside of the inner body is separated by a plurality of partitions, and a plurality of holes are provided in each partition. After the hot liquid is introduced into the inner body, the heat is distributed uniformly through the layers of the separator through the holes. 34. The chemical-mechanical grinding device with temperature control according to item 25 of the scope of the patent application, wherein the heating device is a hot gas pipe or a heat coil and is provided in the tray to uniformly heat the tray. 35_ The chemical mechanical polishing device with temperature control as described in item 34 of the patent scope of the patent, wherein the heating device is radial. 36. The chemical mechanical polishing device with temperature control according to item 34 of the scope of patent application, wherein the heating device is concentric. 37. The chemical mechanical polishing device with temperature control as described in item 34 of the scope of patent application, wherein the heating device is radial plus concentric circles. 38_ The chemical mechanical polishing device with temperature control according to item 34 of the scope of patent application, wherein the heating device is in the shape of a grid plus concentric circles. 39_ Chemical paper with temperature control as described in item 25 of the scope of patent application. Standards (CNS) & Specifications (21c | x-297) ---- (Please read the back Note ^ Please fill in this page j

4 42 36 0 g88 Patent application scope The mechanical grinding device of the consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs, where the object to be ground is a semiconductor substrate of a very large integrated circuit. 40. The chemical mechanical polishing device with temperature control according to item 25 of the scope of the patent application, wherein the object to be polished is a transparent substrate of a liquid crystal display. 41. The chemical mechanical polishing device with temperature control according to item 25 of the scope of patent application, wherein the object to be polished is a silicon wafer. 42. A chemical mechanical polishing device with temperature control, comprising: a polishing pad, and a polishing liquid is provided on the polishing pad; a tray, which holds an object to be polished, and makes the object to be ground on the polishing pad by chemical mechanical method Grinding; and a heating device that directly or indirectly heats the polishing pad, the tray, and the object to be maintained, so that the polishing pad, the tray, and the object to be maintained are maintained at a constant temperature within two degrees Celsius. 43. The chemical mechanical polishing device with temperature control according to item 42 of the scope of patent application, further comprising a storage device for storing the object to be ground, and a storage device for removing the object from the storage device And transmitting to the conveying device on the polishing pad, and the heating device further comprises heating the storage device and the conveying device to the predetermined temperature. 44. The chemical mechanical polishing device with temperature control according to item 42 or 43 of the scope of patent application, wherein the predetermined temperature is 20 ~ 80 ° C. 45. The chemical mechanical polishing device with temperature control according to item 43 of the scope of patent application, wherein the storage device is made of quartz, and the heating device is an infrared heating source, which is arranged around the storage device for heating 16 This paper size applies to Chinese national standards (CNS > A4 size (210X297 mm) (Please read the notes on the back before filling in this card)) Order r 44236 Π ABCD

Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 6. Scope of patent application The abrasives stored in the storage device. 46. The chemical-mechanical grinding device with temperature control according to item 43 of the scope of the patent application, wherein the heating device is a hot gas line and is arranged around the storage device for ejecting hot gas to heat and store in the storage device Inside the object to be ground. 47. The chemical mechanical polishing device with temperature control according to item 43 of the scope of the patent application, wherein the heating device is a preheating tank storing hot liquid, and the storage device is immersed in the preheating tank for The object to be ground stored in the storage device is heated. 48. The chemical mechanical polishing device with temperature control according to item 43 of the scope of patent application, wherein the conveying device includes a robot arm, and the heating device is a heating coil, which is arranged in the robot arm to heat the robot arm . 49. The chemical mechanical polishing device with temperature control according to item 43 of the scope of the patent application, wherein the conveying device includes a conveying belt, and the heating device is an infrared heating source, which is arranged around the conveying belt for heating A conveying belt for conveying the object to be ground. 50. The chemical mechanical polishing device with temperature control according to item 43 of the scope of the patent application, wherein the conveying device includes a conveying belt, and the heating device is a hot gas pipeline, which is arranged around the conveying belt for ejecting The hot air heats the conveying belt that conveys the object to be ground. 51. The chemical mechanical polishing device with temperature control according to item 43 of the scope of patent application, wherein the heating device is a conveying tank for storing hot liquid, and the conveying device includes a conveying belt provided in the conveying tank. . 17 This paper size is based on the Chinese national standard (CNS > A4 now (210X297 mm) (Please read the precautions on the back before filling out this page) Order

52. The chemical-mechanical grinding device with temperature control according to item 42 of the scope of the patent application, wherein the heating device is a hot gas pipe or a heat coil, which is set under the research material, and the grinding grate is heated uniformly. 53 'The temperature-controlled chemical mechanical polishing device as described in the scope of patent application (52), where' The heating device is radial. 54. The chemical mechanical polishing device with temperature control according to item 52 of the scope of the patent application, wherein the heating device has a concentric circle shape. 55. The chemical-mechanical polishing device with temperature control according to item 52 of the scope of the patent application, wherein the heating device is radial and concentric. 56. The chemical mechanical grinding dress with temperature control according to item 52 of the scope of the patent application, wherein the heating device is in the shape of a grid plus a concentric circle. 57_ The chemical mechanical polishing device with temperature control according to item 42 of the scope of patent application, wherein the heating device is arranged under the polishing pad, and the heating device includes a hollow inner body and an outer body. After the main body is introduced into the heating device, the main body is led out from the outer body for uniformly heating the grinding mill. 58 · Printed by the Shellfish Consumer Cooperative of the Ministry of Chemical Economy of the Ministry of Chemical Economy and the Temperature Control System described in item 57 of the scope of patent application (please read the precautions on the back before filling this page). The inside of the inner body is separated by a plurality of partitions, and a plurality of holes are provided on each partition. After the hot liquid is introduced into the inner body, the holes are passed through the layers of the partitions so that Even heat distribution. 59. The chemical-mechanical grinding device with temperature control according to item 42 of the scope of the patent application, wherein the heating device is a hot gas pipe or a heat coil, and is arranged in the tray to uniformly heat the tray. This paper home ladder ¥ (CNS) A4 now (210X297 mm) I, —i — ^ —----------- 1442 3 〇q A8 B8 C8 D8 六、 Application for patent scope 6 The chemical-mechanical polishing device with temperature control as described in item 59 of the scope of the patent application, its heating device is radial. 61. Chemical mechanical polishing device with temperature control as described in item 59 of the scope of patent application, wherein the heating device is concentric n 62. Chemical mechanical polishing with temperature control as described in item 59 of the scope of patent application The device, wherein the heating device is radial and concentric. 63. The chemical mechanical polishing device with temperature control as described in item 59 of the scope of the patent application, wherein the heating device has a grid shape and a concentric circle shape. 64. The chemical mechanical polishing device with temperature control according to item 42 of the scope of the patent application, wherein the object to be polished is a semiconductor substrate of a very large integrated circuit. 65. The chemical mechanical polishing device with temperature control according to item 42 of the scope of the patent application, wherein the object to be polished is a transparent substrate of a liquid crystal display. (Please read the precautions on the back before filling out this page) Order Printed by the Consumer Standards Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs This paper uses the Chinese National Standard (CNS) Α4 size (210X297 mm)