201117257 六、發明說明： 【發明所屬之技術領域】 本發明是有關使用於例如進行半導體晶圓等的基板的 處理之基板處理系統的加熱裝置的昇溫控制方法、程式、 電腦記錄媒體及使用於基板處理系統的加熱裝置的昇溫控 制裝置。 【先前技術】 一般，半導體裝置的製造製程之光飩刻（ Photolithography )處理是例如進行在半導體晶圓等的基板 上塗佈光阻劑液形成光阻劑膜的光阻劑塗佈處理、在光阻 劑膜使所定的圖案曝光的曝光處理、使被曝光的光阻劑膜 顯像的顯像處理、使顯像處理後的晶圓乾燥的加熱處理等 的各種處理。 該等一連串的處理，通常是使用塗佈顯像處理系統來 進行。塗佈顯像處理系統是具有：例如以卡匣單位來搬出 入基板的卡匣站、及配置有複數個用以對基板進行各種處 理的處理裝置之處理站、及在鄰接的曝光裝置與處理站之 間進行基板的交接之介面站等（專利文獻1 )。 在例如專利文獻1所揭示那樣的塗佈顯像處理系統中 ，以能夠立即開始被搬入該塗佈顯像處理系統的晶圓的處 理之方式，設置於處理站內的複數個加熱裝置，通常是在 預先被昇溫至所定的溫度之狀態下待機。此情況，該塗佈 顯像處理系統的起動時，加熱裝置的昇溫會藉由內藏於加 -5- 201117257 熱裝置之例如電力加熱器來一齊進行。 〔先行技術文獻〕 〔專利文獻〕 〔專利文獻1〕特開2006-287178號公報 【發明內容】 (發明所欲解決的課題） 可是，加熱裝置在被昇溫至所定的溫度之狀態下待機 的狀態，電力加熱器的消費電力是只補充從加熱裝置放射 至加熱裝置的外部之熱量的部分，此保溫所要的電力是形 成加熱裝置的昇溫所要的電力，亦即峰値時的電力的一半 以下。因此，若比較塗佈顯像處理系統的通常運轉時的消 費電力與加熱裝置的昇溫時的消費電力，則通常運轉時的 消費電力是形成加熱裝置的昇溫時的消費電力的一半以下 〇 然而，可有關在塗佈顯像處理系統的電力系統的上位 所設置的電力設備，例如變壓器或遮斷器等的電力設備， 儘管塗佈顯像處理系統的通常運轉時的消費電力爲加熱裝 置的昇溫時的消費電力的一半以下，還是需要對於塗佈顯 像處理系統的消費電力的峰値具有耐力的設計。因此，形 成對於塗佈顯像處理系統的通常運轉時的消費電力持過剩 的容量之電力設備，在電力設備的設置上花費多餘的費用 0 並且，在遠低於額定點的負荷領域運轉變壓器時，變 -6 - 201117257 壓器的效率會變差。因此，由省能源的觀點來看也是最好 降低峰値時的消費電力，使電力設備的容量接近通常運轉 時的消費電力。 本發明是有鑑於該點而硏發者，以將基板處理系統的 加熱裝置昇溫時，可使峰値時的消費電力降低爲目的。 (用以解決課題的手段） 用以達成前述目的之本發明，係於基板處理系統中， 控制複數的加熱裝置的昇溫之方法，該基板處理系統係具 備用以加熱基板的複數的加熱裝置，按照被設定於所定的 處理方法（Recipe)之順序來處理基板，其特徵爲： 按照下列至少其中任一個、或組合二個以上的規則來 昇溫前述複數的加熱裝置， 即，以被設定於前述所定的處理方法之基板的處理順 序昇溫加熱裝置之規則： 在層疊於上下方向而配置的前述複數的加熱裝置中， 由配置於下方的加熱裝置到配置於上方的加熱裝置的順序 昇溫之規則： 由從昇溫開始到昇溫完了的制定時間短的加熱裝置到 前述制定時間長的加熱裝置的順序昇溫之規則； 而且’一邊使隨著一前述加熱裝置的昇溫而從該一加 熱裝置放射的熱傳達至其他的前述加熱裝置，一邊進行前 述複數的加熱裝置的昇溫。 若根據本發明，則因爲在起動基板處理系統時，根據 201117257 所定的規則來階段性地進行加熱裝置的昇溫，所以可降低 基板處理系統起動時的消費電力的峰値。因此，與以往那 樣一齊進行各加熱裝置的昇溫時作比較，可縮小在塗佈顯 像處理系統的電力系統的上位所設置之電力設備的容量。 藉此，可降低電力設備的設置所要的費用。並且，在基板 處理系統的起動時，亦即峰値時的消費電力與通常運轉時 的消費電力的差小，所以可使在基板處理系統的上位所設 置之變壓器等的電力設備運轉於比以往更接近額定點的點 。因此，電力設備的運轉時的效率會提升，可使在電力設 備的能源損失減少。 而且，在加熱裝置的昇溫中，一邊使從昇溫完了的加 熱裝置或昇溫中的加熱裝置所放射的熱傳達至其他的加熱 裝置，一邊進行昇溫，因此可縮短加熱裝置的昇溫所要的 時間ώ 另外，以設定於前述所定的處理方法之基板的處理順 序來昇溫加熱裝置時，亦可以各加熱裝置按照設定於前述 處理方法之基板的處理順序來進行基板的加熱之前，該加 熱裝置的昇溫能夠預先完了的方式，控制開始該各加熱裝 置的昇溫之時期。 亦可監視在前述複數的加熱裝置所被消費的電力的總 量，以前述消費電力的總量不會超過所定的値之方式，控 制供給至前述各加熱裝置的電力的量。 該情況，亦可以和被設定於前述處理方法之基板的處 理順序相反的順序來使供給至前述加熱裝置的電力的量減 -8- 201117257 少。 前述複數的加熱裝置係分別具備載置基板來加熱的加 熱板，前述加熱板係被區劃成複數的領域，可在該各領域 設定溫度，在昇溫前述加熱板時，以能夠從前述加熱板的 外側往該加熱板的內側之方向傳達熱的方式，昇溫前述熱 處理板。 若根據別的觀點的本發明，則可提供一種爲了使前述 加熱裝置的昇溫控制方法藉由基板處理系統來實行，而於 控制該基板處理系統的控制裝置的電腦上動作之程式。 又，若根據別的觀點的本發明，則可提供一種儲存程 式之讀取可能的電腦記憶媒體。 又，別的觀點的本發明，係具備加熱基板的複數的加 熱裝置，按照被設定於所定的處理方法之順序來處理基板 之基板處理系統，其特徵爲： 具有按照下列至少其中任一個、或組合二個以上的規 則來昇溫前述複數的加熱裝置之控制裝置， 即，以被設定於前述所定的處理方法之基板的處理順 序昇溫加熱裝置之規則； 在層疊於上下方向而配置的前述複數的加熱裝置中， 由配置於下方的加熱裝置到配置於上方的加熱裝置的順序 昇溫之規則； 由從昇溫開始到昇溫完了的制定時間短的加熱裝置到 前述制定時間長的加熱裝置的順序昇溫之規則； 前述複數的加熱裝置係以使隨著一前述加熱裝置的昇 -9 - 201117257 溫而從該一加熱裝置放射的熱能夠傳達至其他 裝置之方式配置。 前述控制裝置係以設定於前述所定的處理 的處理順序來昇溫加熱裝置時，以各加熱裝置 前述處理方法之基板的處理順序來進行基板的 該加熱裝置的昇溫能夠預先完了的方式，更控 裝置的昇溫的開始時期。 前述控制裝置可更進行監視在前述複數的 被消費的電力的總量，以前述消費電力的總量 定的値之方式，使供給至前述各加熱裝置的電 之控制。該情況，亦可進行以和被設定於前述 基板的處理順序相反的順序來使供給至前述加 力的暈減少之控制。 前述複數的加熱裝置係分別具備載置基板 熱板，前述加熱板係被區劃成複數的領域，可 設定溫度，前述控制裝置可更進行在昇溫前述 以能夠從前述加熱板的外側往該加熱板的內側 熱的方式，昇溫前述熱處理板之控制。 〔發明的效果〕 若根據本發明，則在昇溫基板處理系統的 ，可使峰値時的消費電力降低。 【實施方式】 的前述加熱 方法之基板 按照設定於 加熱之前， 制該各加熱 加熱裝置所 不會超過所 力的量減少 處理方法之 熱裝置的電 來加熱的加 在該各領域 加熱板時， 之方向傳達 加熱裝置時 -10- 201117257 以下，說明有關本發明的實施形態。圖1是表示作爲 本實施形態的基板處理系統之塗佈顯像處理系統1的內部 構成的槪略說明圖。圖2及圖3是表示塗佈顯像處理系統1 的內部構成的槪略側面圖。 塗佈顯像處理系統1是如圖1所示，具有一體連接作爲 搬出入部的卡匣站2、作爲處理部的處理站3、及作爲搬送 部的介面站5的構成。該卡匣站2是例如在與外部之間搬出 入卡匣C，該處理站3是具備在光蝕刻處理中單片式實施所 定處理的複數的各種處理單元，該介面站5是在與處理站3 鄰接的曝光裝置4之間進行晶圓W的交接。 卡匣站2是例如被分成卡匣搬出入部10及晶圓搬送部 11。例如卡匣搬出入部10是設於塗佈顯像處理系統1的Y方 向負方向（圖1的左方向）側的端部。在卡匣搬出入部10 設有卡匣載置台12。在卡匣載置台12上設有複數例如4個 的載置板13。載置板13是在水平方向的X方向（圖1的上下 方向）排列成一列而設置。對塗佈顯像處理系統1的外部 搬出入卡匣C時，可在該等的載置板13載置卡匣C。 在晶圓搬送部11如圖1所示設有可在延伸於X方向的搬 送路20上移動自如的晶圓搬送裝置21。晶圓搬送裝置21是 在上下方向及鉛直軸周圍（Θ方向）也可移動自如，可在 各載置板13上的卡匣C與後述的處理站3的第3區塊G3的交 接裝置之間搬送晶圓W。 在處理站3是設有具備各種單元的複數例如4個的區塊 Gl、G2、G3、G4。例如在處理站3的正面側（圖1的X方向 -11 - 201117257 負方向側）設有第1區塊G 1，在處理站3的背面側（圖1的 X方向正方向側）設有第2區塊G2。並且，在處理站3的卡 匣站2側（圖1的Y方向負方向側）設有第3區塊G3，在處 理站3的介面站5側（圖1的Y方向正方向側）設有第4區塊 G4 » 例如在第1區塊G1，如圖2所示，由下依序重疊4段複 數的液處理單元，例如顯像處理晶圆W的顯像處理單元30 、在晶圓W的光阻劑膜的下層形成反射防止膜（以下稱爲 「下部反射防止膜」）的下部反射防止膜形成單元31、在 晶圓W塗佈光阻劑液而形成光阻劑膜的光阻劑塗佈單元32 、在晶圓W的光阻劑膜的上層形成反射防止膜（以下稱爲 「上部反射防止膜」）的上部反射防止膜形成單元33。 例如第1區塊G1的各單元30〜33是在水平方向具有複 數個處理時收容晶圓W的杯F，可將複數的晶圓W並行處理 〇 例如在第2區塊G2，如圖3所示設有作爲進行晶圓W的 熱處理的加熱裝置之複數的熱處理單元40〜43。各熱處理 單元40〜43是由下依熱處理單元4〇〜43的順序層疊設置， 以從各熱處理單元40〜43放射的熱能夠傳達至其他的熱處 理單元之方式構成。熱處理單元40、41、42、43是分別配 置成與顯像處理單元30、下部反射防止膜形成單元31、光 阻劑塗佈單元3 2、上部反射防止膜形成單元3 3同程度的高 度。 例如在第3區塊G3是由下依序設有複數的交接單元50 -12- 201117257 、51、52、53、54、55、56。並且，在第4區塊G4是由下 依序設有複數的交接單元60、61、62。 如圖1所示，在被第1區塊G1〜第4區塊G4所包圍的領 域中形成有晶圓搬送領域D。在晶圓搬送領域D，例如圖3 所示，由下依序設有晶圓搬送裝置7 0、7 1、7 2、7 3。晶圓 搬送裝置70、71、72、73可例如在各區塊G1〜G4的同程 度的高度的所定單元搬送晶圓W。 並且，在晶圓搬送領域D設有在第3區塊G3與第4區塊 G4之間直線性地搬送晶圓W的梭子搬送裝置80。 梭子搬送裝置80是例如在圖3的Y方向直線性地移動自 如。梭子搬送裝置80是在支撐晶圓W的狀態下移動於Y方 向，可在第3區塊G3的交接單元52與第4區塊G4的交接單 元62之間搬送晶圓W。 如圖1所示，在第3區塊G3的X方向正方向側設有晶圓 搬送裝置90。晶圓搬送裝置90是具有例如在前後方向、Θ 方向及上下方向移動自如的搬送臂。晶圓搬送裝置90是在 支撐晶圓W的狀態下移動於上下，可在第3區塊G3內的各 交接單元搬送晶圓W。 在介面站5設有晶圓搬送裝置100。晶圓搬送裝置100 是具有例如在前後方向、Θ方向及上下方向移動自如的搬 送臂。晶圓搬送裝置100是例如在搬送臂支撐晶圓W，可 在第4區塊G4內的各交接單元、曝光裝置4搬送晶圓W。 其次，說明有關熱處理單元40的構成。圖4是表示熱 處理單元40的構成的槪略橫剖面圖，圖5是表示熱處理單 201117257 元40的構成的槪略縱剖面圖。 熱處理單元40是如圖4所示具有可閉鎖內部的處理容 器110，在處理容器110對向於晶圓搬送裝置70的側面形成 有晶圓W的搬出入口 111。並且，如圖5所示，熱處理單元 40是在處理容器110內具有：載置晶圓W來加熱的熱板112 、及載置晶圓W來溫度調節的冷卻板1 1 3，可進行加熱處 理與冷卻處理的雙方。 熱板11 2是具有厚度的大致圓盤形狀。熱板112具有水 平的上面，在該上面設有例如吸引晶圓W的吸引口（未圖 示）。藉由來自此吸引口的吸引，可將晶圓W吸附保持於 熱板1 12上。 如圖5所示，在熱板112的內部設有電力加熱器121， 藉由後述的控制裝置150來控制往電力加熱器121之電力的 供給暈，藉此可將熱板112控制於所定的設定溫度。 在熱板11 2形成有貫通於上下方向的複數個貫通孔122 。在貫通孔122中設有昇降銷123。昇降銷123可藉由汽缸 等的昇降驅動機構124來上下作動。昇降銷123是插通貫通 孔122內來突出至熱板112的上面，可支撐晶圓W來昇降。 在熱板1〗2設有用以保持該熱板II2的外周部之環狀的 保持構件125。在保持構件125設有包圍該保持構件125的 外周，收容昇降銷123之筒狀的支承環126。 冷卻板113是具有厚度的大致圓盤形狀。冷卻板113具 有水平的上面，在該上面設有例如吸引晶圓w的吸引口（ 未圖示）。藉由來自此吸引口的吸引’可將晶圓W吸附保 -14- 201117257 持於冷卻板1 1 3上。 在冷卻板113的內部內藏有例如Peltier device等的冷 卻構件（未圖示），可將冷卻板1 1 3調整至所定的設定溫 度。 冷卻板113的其他構成是具有與熱板Π2同樣的構成。 亦即，在冷卻板1 1 3中形成有貫通於上下方向的複數個貫 通孔131。在貫通孔131中設有昇降銷132。昇降銷132是可 藉由汽缸等的昇降驅動機構133來上下作動。昇降銷132是 插通貫通孔131內而突出至冷卻板113的上面，可支撐晶圓 W來昇降。 在冷卻板113設有用以保持該冷卻板113的外周部之環 狀的保持構件134。在保持構件134設有包圍該保持構件 134的外周，收容昇降銷132之筒狀的支承環135。另外， 有關熱處理單元41〜43的構成是與熱處理單元40的構成相 同，因此省略說明。[Technical Field] The present invention relates to a temperature rise control method, a program, a computer recording medium, and a substrate for use in a substrate processing system for processing a substrate such as a semiconductor wafer. A temperature rise control device for the heating device of the processing system. [Prior Art] In general, a photolithography process for manufacturing a semiconductor device is, for example, a photoresist coating process in which a photoresist liquid is applied onto a substrate such as a semiconductor wafer to form a photoresist film. The photoresist film is subjected to various processes such as exposure treatment for exposing a predetermined pattern, development processing for developing an exposed photoresist film, and heat treatment for drying a wafer after development. These series of processes are usually performed using a coating development processing system. The coating development processing system includes, for example, a cassette station that carries in and out of the substrate in a cassette unit, and a processing station in which a plurality of processing units for performing various processing on the substrate are disposed, and an adjacent exposure apparatus and processing An interface station that transfers substrates between stations, etc. (Patent Document 1). For example, in the coating development processing system disclosed in Patent Document 1, a plurality of heating devices installed in the processing station are usually provided so that the processing of the wafer to be carried into the coating development processing system can be immediately started. Standby in a state where the temperature is raised to a predetermined temperature in advance. In this case, when the coating development processing system is started, the temperature rise of the heating device is performed by means of, for example, an electric heater built in the heating device of -5 - 201117257. [PRIOR ART DOCUMENT] [Patent Document 1] JP-A-2006-287178 (Problem to be Solved by the Invention) However, the heating device is in a state of being warmed up to a predetermined temperature. The power consumption of the electric heater is a portion that supplements only the heat radiated from the heating device to the outside of the heating device. The electric power required for the heat insulation is the electric power required to increase the temperature of the heating device, that is, less than half of the electric power at the time of peaking. Therefore, when the power consumption during the normal operation of the application processing system and the power consumption during the temperature rise of the heating device are compared, the power consumption during the normal operation is less than or equal to half of the power consumption when the heating device is heated. The power device provided in the upper position of the power system to which the development processing system is applied, such as a power device such as a transformer or a breaker, although the power consumption during the normal operation of the coating development processing system is the temperature rise of the heating device At least half of the consumption power of the time, there is still a need for endurance design for the peak of the power consumption of the coating development processing system. Therefore, an electric power device that has an excess capacity for the consumption power of the normal operation of the coating development processing system is formed, and an extra cost is incurred in the installation of the electric power device. 0, and when the transformer is operated in a load region far below the rated point. , change -6 - 201117257 The efficiency of the press will be worse. Therefore, from the viewpoint of energy saving, it is also preferable to reduce the consumption power at the peak, so that the capacity of the power equipment is close to the power consumption during normal operation. In view of the above, the present invention has an object of reducing the power consumption at the time of peaking when the temperature of the heating device of the substrate processing system is raised. (Means for Solving the Problem) The present invention for achieving the above object is a method for controlling the temperature rise of a plurality of heating devices in a substrate processing system, the substrate processing system including a plurality of heating devices for heating the substrate, The substrate is processed in the order set in a predetermined processing method (recipe), wherein the plurality of heating devices are heated according to at least one of the following or a combination of two or more rules, that is, set in the foregoing The processing procedure of the substrate of the predetermined processing method is the rule of heating the heating device: in the plurality of heating devices arranged in the vertical direction, the heating means arranged in the lower direction is heated to the order of the heating device disposed above: a step of sequentially heating the heating device having a short development time from the start of the temperature rise to the temperature rise to the heating device having a long development time; and 'heating the heat radiated from the heating device as the temperature of the heating device is increased Carrying out the above plurality of heating devices to other heating devices Warming. According to the present invention, since the temperature rise of the heating device is performed stepwise according to the rule defined in 201117257 when the substrate processing system is started, the peak of the power consumption at the time of starting the substrate processing system can be reduced. Therefore, the capacity of the power equipment installed in the upper position of the power system of the coating development processing system can be reduced as compared with the case where the temperature of each heating device is increased in the same manner as in the related art. Thereby, the cost of setting up the power device can be reduced. In addition, when the substrate processing system is started, that is, the difference between the power consumption at the peak time and the power consumption during normal operation is small, it is possible to operate the power device such as a transformer provided in the upper position of the substrate processing system. Closer to the point of the rated point. Therefore, the efficiency of the operation of the electric equipment is increased, and the energy loss in the electric equipment can be reduced. In addition, when the temperature of the heating device is increased, the heat emitted from the heating device after the temperature rise or the heating device during the temperature rise is transmitted to the other heating device, and the temperature is raised. Therefore, the time required for the temperature rise of the heating device can be shortened. When the heating device is heated by the processing order of the substrate set in the predetermined processing method, the heating device may be heated before the heating of the substrate in accordance with the processing order of the substrate set in the processing method. In the completed manner, the period of temperature rise of each of the heating devices is controlled. It is also possible to monitor the total amount of electric power consumed by the plurality of heating devices, and control the amount of electric power supplied to each of the heating devices so that the total amount of the consumed electric power does not exceed a predetermined value. In this case, the amount of electric power supplied to the heating device may be reduced by -8 - 201117257 in the reverse order of the processing procedure of the substrate set in the processing method. Each of the plurality of heating devices includes a heating plate on which a substrate is placed and heated, and the heating plate is divided into a plurality of fields, and a temperature can be set in each of the fields, and when the heating plate is heated, the heating plate can be heated from the heating plate. The outer side is heated to the inside of the heating plate to heat the heat treatment plate. According to another aspect of the invention, there is provided a program for operating a computer for controlling a control device of the substrate processing system in order to cause the temperature increase control method of the heating device to be performed by a substrate processing system. Further, according to the present invention from another viewpoint, it is possible to provide a computer memory medium capable of reading in a storage mode. Further, according to another aspect of the invention, there is provided a substrate processing system for processing a substrate in accordance with a plurality of heating means for heating a substrate, wherein the substrate processing system is processed in the order of a predetermined processing method, and has at least one of the following, or a control device for heating the plurality of heating devices by combining two or more rules, that is, a rule for heating the heating device in a processing order of the substrate set in the predetermined processing method; and the plurality of the plurality of stacked in the vertical direction In the heating device, the heating device disposed below is heated to the temperature of the heating device disposed above, and the heating device is heated from the heating device to the heating device having a short heating time to the heating device having a long development time. The plurality of heating devices are configured such that heat radiated from the heating device can be transmitted to the other device as the temperature of the heating device is increased from -9 to 201117257. In the control device, when the heating device is heated in the processing order set in the predetermined process, the temperature of the heating device in the substrate can be pre-finished in the processing order of the substrate in each of the heating devices. The beginning of the warming up. The control device can further monitor the total amount of the consumed electric power, and control the electric power supplied to each of the heating devices in a manner that is determined by the total amount of the consumed electric power. In this case, it is also possible to control the halo reduction supplied to the above-described boosting force in the reverse order of the processing order set on the substrate. Each of the plurality of heating devices includes a substrate hot plate, the heating plate is divided into a plurality of fields, and a temperature can be set, and the control device can further increase the temperature to the heater plate from the outside of the heating plate. The inside of the heat is heated to control the heat treatment plate. [Effects of the Invention] According to the present invention, in the temperature-increasing substrate processing system, the power consumption at the time of peaking can be reduced. [Embodiment] The substrate of the heating method is set before the heating, and when the heating and heating devices are not heated by the heat of the heat treatment device of the amount reduction processing method, the heating plates are applied to the respective fields. When the heating device is conveyed in the direction of the present invention -10- 201117257 Hereinafter, an embodiment of the present invention will be described. Fig. 1 is a schematic explanatory view showing the internal configuration of a coating development processing system 1 as a substrate processing system according to the present embodiment. 2 and 3 are schematic side views showing the internal configuration of the coating development processing system 1. As shown in Fig. 1, the coating development processing system 1 has a configuration in which a cassette station 2 as a loading and unloading unit, a processing station 3 as a processing unit, and a mesa station 5 as a transport unit are integrally connected. The card station 2 carries out, for example, a cassette C, which is provided with a plurality of processing units that are individually processed in a photolithography process, and the interface station 5 is processed and processed. The wafer 3 is transferred between the adjacent exposure devices 4 of the station 3. The cassette station 2 is divided into, for example, a cassette loading/unloading unit 10 and a wafer transfer unit 11. For example, the cassette loading/unloading portion 10 is an end portion provided on the side in the negative Y direction (the left direction in Fig. 1) of the application development processing system 1. A cassette mounting table 12 is provided in the cassette loading and unloading portion 10. A plurality of, for example, four mounting plates 13 are provided on the cassette mounting table 12. The placing plates 13 are provided in a line in the horizontal direction (the vertical direction in Fig. 1). When the cassette C is carried out from the outside of the coating development processing system 1, the cassette C can be placed on the mounting sheets 13. As shown in Fig. 1, the wafer transfer unit 11 is provided with a wafer transfer device 21 that can move freely on the transfer path 20 extending in the X direction. The wafer transfer device 21 is also movably movable in the vertical direction and around the vertical axis (Θ direction), and the transfer device of the cassette C on each of the mounting plates 13 and the third block G3 of the processing station 3 to be described later Transfer wafer W between. The processing station 3 is provided with a plurality of blocks G1, G2, G3, and G4 having a plurality of units, for example, four. For example, the first block G1 is provided on the front side of the processing station 3 (the X direction -11 - 201117257 on the negative side in FIG. 1), and is provided on the back side of the processing station 3 (the positive side in the X direction of FIG. 1). Block 2 G2. Further, the third block G3 is provided on the side of the cassette station 2 of the processing station 3 (the negative side in the Y direction of FIG. 1), and is provided on the interface station 5 side of the processing station 3 (the positive direction side in the Y direction of FIG. 1). There is a fourth block G4 » For example, in the first block G1, as shown in FIG. 2, a liquid processing unit of four stages is superimposed in sequence, for example, a development processing unit 30 for developing the wafer W, in the crystal The lower anti-reflection film forming unit 31 of the anti-reflection film (hereinafter referred to as "lower anti-reflection film") is formed on the lower layer of the photoresist film of the circle W, and the photoresist liquid is applied onto the wafer W to form a photoresist film. The photoresist coating unit 32 forms an upper anti-reflection film forming unit 33 of an anti-reflection film (hereinafter referred to as an "upper reflection preventing film") on the upper layer of the photoresist film of the wafer W. For example, each of the cells 30 to 33 of the first block G1 is a cup F that accommodates the wafer W when there are a plurality of processes in the horizontal direction, and the plurality of wafers W can be processed in parallel, for example, in the second block G2, as shown in FIG. Heat treatment units 40 to 43 as a plurality of heating means for performing heat treatment of the wafer W are provided. Each of the heat treatment units 40 to 43 is stacked in the order of the heat treatment units 4 to 43 in order, and the heat radiated from each of the heat treatment units 40 to 43 can be transmitted to another heat treatment unit. The heat treatment units 40, 41, 42, and 43 are disposed to have the same height as the development processing unit 30, the lower reflection preventing film forming unit 31, the photoresist applying unit 3, and the upper anti-reflection film forming unit 33, respectively. For example, in the third block G3, a plurality of transfer units 50-12-201117257, 51, 52, 53, 54, 55, 56 are sequentially arranged. Further, in the fourth block G4, a plurality of delivery units 60, 61, 62 are sequentially provided. As shown in Fig. 1, a wafer transfer area D is formed in a region surrounded by the first block G1 to the fourth block G4. In the wafer transfer area D, for example, as shown in FIG. 3, wafer transfer apparatuses 70, 7 1 , 7 2, and 7 3 are sequentially disposed. The wafer transfer apparatuses 70, 71, 72, and 73 can transport the wafer W, for example, at a predetermined unit of the same height of each of the blocks G1 to G4. Further, in the wafer transfer area D, a shuttle transport device 80 that linearly transports the wafer W between the third block G3 and the fourth block G4 is provided. The shuttle conveying device 80 is linearly movable, for example, in the Y direction of Fig. 3 . The shuttle conveying device 80 is moved in the Y direction while supporting the wafer W, and the wafer W can be conveyed between the delivery unit 52 of the third block G3 and the delivery unit 62 of the fourth block G4. As shown in Fig. 1, a wafer transfer device 90 is provided on the positive side in the X direction of the third block G3. The wafer transfer device 90 is a transfer arm that is movable in, for example, the front-rear direction, the 方向 direction, and the vertical direction. The wafer transfer device 90 is moved up and down while supporting the wafer W, and the wafer W can be transferred to each transfer unit in the third block G3. The wafer transfer apparatus 100 is provided in the interface station 5. The wafer transfer device 100 is a transfer arm that is movable in, for example, the front-rear direction, the x-direction, and the vertical direction. In the wafer transfer apparatus 100, for example, the wafer W is supported by the transfer arm, and the wafer W can be transported by the transfer unit and the exposure apparatus 4 in the fourth block G4. Next, the configuration of the heat treatment unit 40 will be described. Fig. 4 is a schematic cross-sectional view showing a configuration of a heat treatment unit 40, and Fig. 5 is a schematic longitudinal sectional view showing a configuration of a heat treatment unit 201117257. The heat treatment unit 40 has a process container 110 having a lockable interior as shown in Fig. 4, and a carry-out port 111 in which the wafer W is formed on the side surface of the wafer transfer device 70 in the process container 110. Further, as shown in FIG. 5, the heat treatment unit 40 is provided with a hot plate 112 on which the wafer W is placed and heated, and a cooling plate 1 1 3 on which the wafer W is placed and temperature-controlled, in the processing container 110, and can be heated. Both sides of the treatment and cooling process. The hot plate 11 2 is a substantially disk shape having a thickness. The hot plate 112 has a horizontal upper surface on which a suction port (not shown) for attracting the wafer W is provided, for example. The wafer W can be adsorbed and held on the hot plate 1 12 by suction from the suction port. As shown in FIG. 5, an electric heater 121 is provided inside the hot plate 112, and the supply device to the electric heater 121 is controlled by a control device 150 to be described later, whereby the hot plate 112 can be controlled to a predetermined level. set temperature. A plurality of through holes 122 penetrating in the vertical direction are formed in the hot plate 11 2 . A lift pin 123 is provided in the through hole 122. The lift pin 123 can be moved up and down by a lift drive mechanism 124 such as a cylinder. The lift pin 123 is inserted into the through hole 122 to protrude above the hot plate 112, and supports the wafer W to be raised and lowered. The heat plate 1 is provided with a ring-shaped holding member 125 for holding the outer peripheral portion of the hot plate II2. The holding member 125 is provided with a cylindrical support ring 126 that accommodates the outer periphery of the holding member 125 and houses the lift pin 123. The cooling plate 113 is in the shape of a substantially disk having a thickness. The cooling plate 113 has a horizontal upper surface on which a suction port (not shown) for sucking the wafer w is provided, for example. The wafer W can be held on the cooling plate 1 1 3 by the attraction from the suction port. A cooling member (not shown) such as a Peltier device is housed inside the cooling plate 113, and the cooling plate 1 13 can be adjusted to a predetermined set temperature. The other configuration of the cooling plate 113 has the same configuration as that of the hot plate Π2. That is, a plurality of through holes 131 penetrating in the vertical direction are formed in the cooling plate 1 1 3 . A lift pin 132 is provided in the through hole 131. The lift pin 132 is vertically movable by a lift drive mechanism 133 such as a cylinder. The lift pins 132 are inserted into the through holes 131 and protrude to the upper surface of the cooling plate 113 to support the wafer W to be raised and lowered. The cooling plate 113 is provided with a ring-shaped holding member 134 for holding the outer peripheral portion of the cooling plate 113. The holding member 134 is provided with a cylindrical support ring 135 that surrounds the outer periphery of the holding member 134 and houses the lift pins 132. Further, since the configurations of the heat treatment units 41 to 43 are the same as those of the heat treatment unit 40, the description thereof is omitted.
如圖1所示，塗佈顯像處理系統1具有控制裝置1 50。 控制裝置1 50是例如電腦，具有程式儲存部1 5 1。在程式儲 存部151中儲存有用以控制上述各處理單元或各搬送裝置 等的驅動系統的動作，而使塗佈顯像處理系統1的所定作 用、亦即晶圓W的加熱處理、光阻劑液的塗佈、顯像、晶 圓W的搬送路徑的控制等實現之程式，所謂的處理方法。 處理方法是按各處理種別來作成，例如操作者可選擇處理 方法，選擇後的處理方法會從程式儲存部151藉由控制裝 置150來讀出，按照所被讀出的處理方法來實行各晶圓W -15- 201117257 的處埋。 並且，在控制裝置150的程式儲存部151中亦儲存有在 塗佈顯像處理系統1的起動時，爲了控制熱處理單元40〜 43的熱板112的昇溫而制定規則的程式之昇溫方法（recipe )。另外，前述程式是被記錄於例如電腦可讀取的硬碟（ HD)、軟碟（FD)、光碟（CD)、光磁碟（MO)、記憶 卡等電腦可讀取的記憶媒體者，亦可爲從該記憶媒體安裝 於控制裝置1 5 0者。 本實施形態的處理方法是例如圖6的流程圖所示的順 序來設定工程。圖6所示的工程S1是藉由下部反射防止膜 形成單元31及熱處理單元41來形成下部反射防止膜。工程 S2是藉由光阻劑塗佈單元32及熱處理單元42來形成塗佈膜 。工程S3是藉由上部反射防止膜形成單元33及熱處理單元 43來形成上部反射膜。工程S4是藉由曝光裝置4來進行曝 光。在工程S5中則是藉由顯像處理單元30及熱處理單元40 來進行顯像處理。 其次，說明有關控制裝置150之熱板112的溫度控制及 昇溫方法。各熱處理單元40〜43的熱板112的設定溫度是 按照熱處理的目的來設定成相異的値。在本實施形態中， 例如各熱處理單元40〜43的熱板112a〜112d的溫度是分別 設定成Ta〜Td。 在將熱處理單元40的熱板112a昇溫至設定溫度Ta時’ 例如圖7所示，在熱板112a到達設定溫度Ta爲止的昇溫期 間Ha 1，如圖8所示，相當於電力加熱器1 2 1的額定値之電 -16- 201117257 力Pal會被供給至電力加熱器121，藉由控制裝置150來控 制電源裝置（未圖示）的輸出。熱板1 1 2a的溫度到達設定 溫度Ta，熱板U2a被保持於設定溫度Ta的保溫期間Ha2， 控制裝置150會使電源裝置的輸出降低，將熱板1 12a保持 於設定溫度Ta，亦即進行供給相當於補充從熱板1 1 2放射 至外部的熱量的部分之電力Pa2的控制。其他的熱處理單 元41〜43的熱板112b〜112d時也是同樣的。 在被儲存於程式儲存部151的昇溫方法中設定有各熱 處理單元40〜43的熱板112a〜112d的昇溫開始的順序、及 昇溫開始的時機。本實施形態的昇溫方法是以被設定於處 理方法之晶圓W的處理順序來依序，亦即以使用於工程S1 的熱處理單元41、使用於工程S2的熱處理單元42、使用於 工程S3的熱處理單元43、使用於工程S5的熱處理單元40的 順序開始昇溫之方式設定昇溫開始的順序。 昇溫方法之昇溫開始的時機，例如圖9所示，最初昇 溫開始的熱處理單元4 1的熱板1 1 2b —旦經過昇溫期間Hb 1 後到達設定溫度Tb，則在昇溫方法中被設定成第2個被昇 溫的熱板1 12c的昇溫會被開始。另外，被設定於昇溫方法 的各熱板1 12a〜1 1 2d的昇溫開始的順序、及昇溫開始的時 機是例如可藉由操作員來任意地變更。 本實施形態的塗佈顯像處理系統1是如以上那樣構成 ，其次說明有關在以上那樣構成的基板處理系統1所被進 行的晶圓處理。 藉由塗佈顯像處理系統1來實行圖6的流程圖所示的基 -17- 201117257 板處理時，首先，按照被設定於昇溫方法的順序來開始各 熱處理單元40〜43的熱板112a〜112d的昇溫。 一旦各熱處理單元40〜43的昇溫開始’則如圖10所示 ，首先熱處理單元41的熱板1 12b會被昇溫至設定溫度Tb。 此時，藉由控制裝置1 5 〇來控制從電源裝置（未圖示）供 給至熱板112b的電力加熱器121之電力’在到達設定溫度 Tb的昇溫期間Hbl，如圖1 1所示’相當於額定値的電力Pbl 會被供給至電力加熱器1 2 1 » —旦昇溫期間Hb 1經過而熱板 1 1 2 b的溫度達設定溫度Tb，則控制裝置1 5 0會使供給至熱 板1 12b的電力減少至Pb2，且開始熱處理單元42的熱板 112c的昇溫。此時，從熱處理單元41放射的熱會傳達至熱 處理單元42，藉此熱板112c僅所定的溫度ATc與初期的狀 態作比較成溫度上昇的狀態。 —旦熱板1 12c的昇溫開始，則與熱板1 12b同樣’到達 設定溫度Tc爲止是相當於電力加熱器121的額定値之電力 Pci會被供給，一旦昇溫期間Hcl經過，熱板1 12c到達設定 溫度Tc，則藉由控制裝置1 50來使電力的供給量減少至電 力Pc2，且電力Pdl會被供給至熱處理單元43的熱板U2d， 熱板11 2d的昇溫開始。熱板112d也是在熱處理單元41、42 的昇溫進行的期間，藉由從熱處理單元4 1、42所放射的熱 來形成僅所定的溫度上昇的狀態。一旦熱板1 1 2d的昇溫期 間Hdl經過，熱板112d到達設定溫度Td，則電力的供給量 會被減少至電力Pd2，且電力Pal會被供給至熱處理單元40 的熱板1 12a，同樣地開始熱板〗12a的昇溫。另外，此時， -18- 201117257 塗佈顯像處理系統1的消費電力是形成峰値Pm。 一旦熱板112a的昇溫期間Hal經過，熱板112a到達設 定溫度Ta，則藉由控制裝置1 50來使電力的供給量減少至 Pa2。 —旦各熱處理單元40〜43的所有熱板112a〜112d的昇 溫完了，則根據處理方法開始晶圓W的處理。 在晶圓W的處理中，首先，收容複數片晶圓W的卡匣C 會被載置於卡匣站10的所定卡匣載置板13。然後，藉由基 板搬裝置21來依序取出卡匣C內的各晶圓W，搬送至處理 站1】.的第3處理裝置群G3之例如交接裝置53。 其次，晶圓W會藉由晶圓搬送裝置71來搬送至第2區 塊G.2的熱處理單元41，藉由冷卻板113來溫度調節處理。 然後，晶圓W會藉由晶圓搬送裝置7 1來搬送至例如第1區 塊G I的下部反射防止膜形成單元3 1，在晶圓W上形成下部 反射防止膜。然後晶圓W會被搬送至第2區塊G2的熱處理 單元41，藉由熱板112來進行加熱處理（圖6的工程S1)。 然後回到第3區塊G3的交接單元53。 其次，晶圓W會藉由晶圓搬送裝置90來搬送至同第3 區塊G3的交接單元54。然後晶圓W會藉由晶圓搬送裝置72 來搬送至第2區塊G2的熱處理單元42，藉由冷卻板113來溫 度調節處理。然後，晶圓W會藉由晶圓搬送裝置72來搬送 至第1區塊G 1的光阻劑塗佈單元3 2，在晶圓W上形成光阻 劑膜。然後晶圓W會藉由晶圓搬送裝置72來搬送至熱處理 單元42，藉由熱板112來進行預烘烤處理（圖6的工程S2) -19- 201117257 。然後，晶圓w會藉由晶圓搬送裝置72來回到第3區塊G3 的交接單元55。 其次，晶圓W會藉由晶圓搬送裝置90來搬送至同第3 區塊G3的交接單元54。然後晶圓W會藉由晶圓搬送裝置73 來搬送至第2區塊G2的熱處理單元43，藉由冷卻板113來溫 度調節處理。然後，晶圓W會藉由晶圓搬送裝置73來搬送 至第1區塊G1的上部反射防止膜形成裝置33，在晶圓W上 形成上部反射防止膜（圖6的工程S3)。然後，晶圓W會 藉由晶圓搬送裝置73來搬送至第3區塊G3的交接單元56。 其次，晶圓W會藉由晶圓搬送裝置90來搬送至交接單 元52，藉由梭子搬送裝置80來搬送至第4區塊G4的交接單 元62。然後，晶圓W會藉由介面站7的晶圓搬送裝置100來 搬送至曝光裝置6，進行曝光處理（圖6的工程S4)。 其次，晶圓W會藉由晶圓搬送裝置100來搬送至第4區 塊G4的交接單元60。然後，晶圓W會藉由晶圓搬送裝置70 來搬送至熱處理單元40，進行曝光後烘烤處理。其次，晶 圓W會藉由冷卻板113來溫度調節處理，然後，藉由晶圓 搬送裝置70來搬送至顯像處理單元30，被顯像。顯像終了 後，晶圓W會藉由晶圓搬送裝置70來搬送至熱處理單元40 ，進行後烘烤處理。然後，晶圓W會藉由冷卻板113來冷 卻（圖6的工程S 5 )。 然後，晶圓W會藉由晶圓搬送裝置70來搬送至第3區 塊G3的交接單元50，然後藉由卡匣站4的晶圓搬送裝置21 來搬送至所定的載置板14的卡匣C。如此，完成一連串的 20- 201117257 來搬送至所定的載置板14的卡匣C。如此，完成一連串的 處理（光蝕刻處理），在晶圓W上形成所定的光阻劑圖案 〇 若根據以上的實施形態，則在起動塗佈顯像處理系統 1時，因爲是根據昇溫方法來階段性地進行各熱處理單元 40〜43的熱板112a〜112d的昇溫，所以可降低塗佈顯像處 理系統1起動時的消費電力的峰値。因此，與以往那樣一 起進行各熱處理單元40〜43的昇溫時作比較，可縮小塗佈 顯像處理系統1的電力系統的上位所設置的電力設備的容 量。藉此，可降低電力設備的設置所要的費用。又，由於 塗佈顯像處理系統1的起動時，亦即峰値時的消費電力與 通常運轉時的消費電力的差變小，因此可在比以往更接近 額定點的點運轉塗佈顯像處理系統1的上位所設置的變壓 器等的電力設備。因此，電力設備的運轉時的效率會提升 ，可使能源的損失減少。 而且，在熱處理單元40〜43的昇溫中，是一邊使從昇 溫完了的熱處理單元或昇溫中的熱處理單元所放射的熱傳 達至其他的熱處理單元，一邊進行昇溫，因此可縮短各熱 處理單元40〜43的昇溫所要的時間。 另外，在以上的實施形態中，是在各熱處理單元40〜 4 3的昇溫全部完了後，開始晶圓W往塗佈顯像處理單元1 的搬入，但亦可在全部的熱處理單元40〜43的昇溫完了前 將晶圓W往塗佈顯像處理單元1搬入，按照被設定於處理 方法之晶圓W的處理順序來將晶圓W加熱於各熱處理單元 -21 - 201117257 40〜43時，以各熱處理單元40〜43的昇溫能夠預先完了的 方式，控制各熱處理單元40〜43的昇溫開始的時期。 具體而言，例如以圖1 0所示的程序來進行昇溫時，被 搬入塗佈顯像處理單元1的晶圓W按照處理方法來搬入熱 處理單元42爲止所要的時間是比熱處理單元42的熱板1 12c 的昇溫期間Hcl短的時間Hx。於是，在熱處理單元41的熱 板1 1 2b的昇溫完了的時間點往塗佈顯像處理單元1搬入晶 圓W時，按照處理方法來將晶圓W搬送至熱處理單元42的 時間點是熱處理單元42的昇溫未完了，造成晶圓W的處理 會停滯。此情況，例如圖1 0中虛線所示，只要預先設定昇 溫方法，使開始昇溫熱處理單元42的熱板1 12c的時機不是 在熱板11 2b的昇溫完了後，而是在熱板112b的昇溫中，且 從熱板1 12b的昇溫完了到熱板1 12c的昇溫完了的期間比時 間Hx更短，便可藉由控制裝置150來適當地控制熱板112c 的昇溫，不會有晶圓W的處理停滯的情形。並且，在如此 進行昇溫的控制下，可縮短從塗佈顯像處理系統1的起動 到晶圓W的處理開始的等待時間，因此可使塗佈顯像處理 系統1的生產性提升。有關熱板112c以後進行熱處理的熱 板1 12d、1 12a之晶圓W的處理停滯的迴避之方法也是同樣 的，因此省略說明。 另外，藉由提早各熱板112a〜112d的昇溫開始的時機 ，例如圖1 1中虛線所示，有可能相當於電力加熱器1 2 1的 額定値之電力會同時被供給至各熱處理單元4〇〜43中複數 的熱處理單元。該情況，恐會有在塗佈顯像處理系統1的 -22- 201117257 消費電力超過上位的電源系統的額定値，例如設置於電力 系統的保護繼電器等跳脫之虞。因此，爲了防止如此的保 護繼電器等的跳脫，亦可例如設置監視被供給至各熱處理 單元4〇〜43的電力加熱器121的電力總量之檢測手段152, 藉由控制裝置1 50來進行限制供給至各熱處理單元40〜43 的電力量之控制，而使藉由檢測手段1 5 2所檢測出的消費 電力的總量不會超過所定的値，例如保護繼電器等的保護 動作的設定値。 以不會超過保護繼電器等的保護動作的設定値之方式 ，限制供給至各熱處理單元40〜43之電力的量時，亦可例 如以和設定於處理方法之晶圓W的加熱處理的順序相反的 順序，亦即在本實施形態中是以熱處理單元40、43、42 ' 4 1的順序來使供給至各熱處理單元的電力量減少。如此一 來’即使發生需要藉由控制裝置1 50來限制供給至各熱處 理單元40〜43的電力量時，還是可按照被設定於處理方法 之晶圓W的處理順序來繼續熱處理單元40〜43的昇溫。因 此’不會有因熱板112的昇溫未完了所引起晶圓W的處理 中斷之情形。 以上的實施形態是對於一個的熱板112設置一個的電 力加熱器1 2 1 ’但亦可例如圖1 2所示，將熱板1 1 2區劃成同 心圓狀的3個領域A〗〜A3，在各領域分別設置電力加熱器 121 ’爲可在每個領域進行溫度設定的構成。如此在熱板 1 1 2設置複數的領域a〗〜A3下，例如在將熱板1 1 2昇溫時 ’可從熱板1 1 2的外側往內側，亦即依領域A1〜領域A3的 -23- 201117257 順序開始昇溫。藉此’使領域A1的熱傳達至往領域A3的 方向，可更抑制熱板II2的昇溫所要的電力的消費量。另 外，在圖12中是繪出3個的領域A1〜A3，但區劃的數量並 非限於3個，且區劃的形狀也可不爲同心圓狀，例如可爲 扇型狀等。 並且，藉由控制裝置1 50來限制供給至各熱處理單元 40〜43的電力量時，例如可不是同時限制往熱板112的領 域A 1〜A3的全部電力加熱器1 2 1供給電力，而是例如以能 夠由內側的領域，亦即從領域A3往領域A 1的順序來限制 的方式進行控制。如此一來，即使往領域A2及領域A3之 電力的供給量被控制裝置1 50所限制時，還是可例如藉由 來自領域A1的熱傳導來進行領域A1及領域A2的昇溫。 另外，以上的實施形態的昇溫方法是以熱處理單元40 〜43的昇溫開始的順序與處理方法之晶圓W的加熱處理的 順序能夠一致的方式來設定昇溫開始的順序，但設定於昇 溫方法之昇溫開始的順序，亦可例如由熱板1 1 2的昇溫開 始到昇溫完了的制定時間短的順序開始昇溫者，或使層疊 於上下方向而配置的熱處理單元40〜43由配置於下方的熱 處理單元40到配置於上方的熱處理單元43的順序開始昇溫 者。 由熱板1 1 2的昇溫開始到昇溫完了的制定時間短的順 序開始昇溫時，例如在圖1 0中以昇溫所要的時間短的順序 ’亦即熱板1 12c、1 12a、1 12b、1 12d的順序來設定昇溫方 法。在如此設定昇溫方法時，例如圖13所示進行各熱處理 -24- 201117257 單元40〜43的熱板1 12a〜1 12d的昇溫。此情況，至昇溫完 了的制定時間短的熱板例如熱板1 1 2c可在到達設定溫度Tc 後以少的電力來傳達熱至其他的熱處理單元。 又，根據發明者們驗證，例如從熱處理單元4 1放射的 熱，相較於熱處理單元40，更容易對熱處理單元42傳達。 亦即從一熱處理單兀放射的熱，相較於位在下方的熱處理 單元，更容易對位在上方的熱處理單元傳達。因此，可使 熱處理單元4〇〜43由下往上，亦即以熱處理單元40、41、 42、43的順序開始昇溫。該情況，可最有效率進行各熱處 理單元40〜43的昇溫。 另外，例如使熱處理單元40〜43以由下往上的順序來 昇溫時，或以至熱處理單元40的昇溫完了的制定時間短的 順序來昇溫時，亦可先在控制裝置1 50的程式儲存部1 5 1儲 存各個的昇溫方法，在塗佈顯像處理系統1的起動時組合 選擇複數的昇溫方法。而且，在同時選擇複數的昇溫方法 時，亦可選擇優先實施哪個的昇溫方法。 說明有關同時選擇複數的昇溫方法的情況。例如各熱 處理單元40〜43的熱板112a〜112d的設置溫度，爲了對應 於複數的處理方法，例如圖14所示在各熱處理單元40〜43 內，更於每個區域201〜208設定不同的値。在圖14中，例 如區域204、207的設定溫度爲180°C，區域201的設定溫度 爲200t，區域202、205、206、208的設定溫度爲250 °C， 區域203的設定溫度爲設定於350 °C。昇溫順序是由昇溫方 法選擇根據處理方法的順序來昇溫者、及使熱處理單元40 -25- 201117257 〜43由下至上的順序來昇溫者，優先選擇依處理方法順序 昇溫者。另外，處理方法之加熱處理是依區域201〜208的 順序來進行者。此情況，例如圖1 5所示，首先在處理方法 中，最初進行晶圓W的加熱處理的區域201、202、及配置 於最下段的區域207的昇溫會開始。 其次，一旦設定溫度最低的區域207的昇溫完了，則 區域202的其次進行晶圓W的加熱處理的區域203、及配置 於最下段的區域208的昇溫會開始（圖15的期間K1)。 然後，一旦區域201到達設定溫度，則區域203的其次 進行晶圓W的加熱處理的區域204的昇溫會開始（圖15的 期間K2)。 然後，區域202會到達設定溫度，且藉由來自區域201 或區域202的熱傳達來預先昇溫的區域2 04也會到達設定溫 度，區域204的其次進行晶圓W的加熱處理的區域205的昇 溫會開始（圖15的期間K3 )。然後，一旦區域204到達設 定溫度，則區域206的昇溫會開始（圖15的期間K4 )，不 在全部的區域中熱板的昇溫完了。 另外，像以上那樣來選擇複數昇溫方法時，當然亦可 藉由控制裝置150來限制往電力加熱器121供給電力。此時 ，電力的限制是被控制成在所被選擇的昇溫方法中由最後 昇溫開始者依序進行電力的限制。 以上，一邊參照附圖一邊說明有關本發明的較佳實施 形態，但本發明並非限於該例。只要是該當業者，便可在 申請專利範圍所記載的思想範疇內，思及各種的變更例或 -26- 201117257 修正例，當然該等亦隸屬本發明的技術範圍。本發明並非 限於此例，可採用各種的形態。本發明亦可適用於基板爲 晶圓以外的FPD (平面直角顯示器）、光罩用的掩膜板等 其他的基板時。 〔產業上的利用可能性〕 本發明是對於進行基板處理系統用加熱裝置的昇溫有 用。 【圖式簡單說明】 圖1是表示本實施形態的塗佈顯像處理系統內部構成 的槪略平面圖。 圖2是表示本實施形態的塗佈顯像處理系統內部構成 的槪略側面圖。 圖3是表示本實施形態的塗佈顯像處理系統內部構成 的槪略側面圖。 圖4是表示熱處理單元的構成的槪略橫剖面圖。 圖5是表示熱處理單元的構成的槪略縱剖面圖。 圖6是表示晶圓處理的各工程的流程圖。 圖7是表示昇溫時的熱板的溫度變動的圖表。 圖8是表示往昇溫時的熱板的電力供給量的變動的圖 表。 圖9是表示熱板的開始的時機的圖表。 圖10是表示昇溫時的熱板的溫度變動的圖表。 -27- 201117257 圖Π是表示往昇溫時的熱板之電力供給量的變動的圖 表。 圖12是表示熱板的構成的平面圖^ 圖13是表示昇溫時的熱板的溫度變動的圖表。 圖14是表示熱處理單元的構成及設定溫度的槪略說明 圖。 圖15是表示昇溫時的熱板的溫度變動的圖表。 【主要元件符號說明】 1 :塗佈顯像處理系統 2 :卡匣站 3 :處理站 4 :曝光裝置 5 :介面站 1〇 :卡匣搬入部 Π :晶圓搬送部 12 :卡匣載置台 13 :卡匣載置板 20 :搬送路 2 1 :晶圓搬送裝置 3 〇 :顯像處理單元 3 1 :下部反射防止膜形成單元 3 2 :光阻劑塗佈單元 3 3 :上部反射防止膜形成單元 -28- 201117257 4 0 ~ 50〜 6 0 ~ 70〜 80 ： 90 ： 100 110 111 112 113 12 1 122 123 124 125 126 13 1 132 133 134 13 5 150 15 1 43 :熱處理單元 5 6 :交接單元 62 :交接單元 73 :晶圓搬送裝置 梭子搬送裝置 晶圓搬送裝置 :晶圓搬送裝置 :處理容器 :搬出入口 :熱板 :冷卻板 :電力加熱器 :貫通孔 :昇降銷 :昇降驅動機構 :保持構件 :支承環 :貫通孔 :昇降銷 =昇降驅動機構 :保持構件 :支承環 :控制裝置 :程式儲存部 -29- 201117257 152 :檢測手段 201〜208:區域 W :晶圓 F :杯 D :晶圓搬送領域 C :卡匣 -30-As shown in FIG. 1, the coating development processing system 1 has a control device 150. The control device 150 is, for example, a computer and has a program storage unit 151. The program storage unit 151 stores an operation for controlling the drive system of each of the processing units or the respective transfer devices, and the predetermined function of the application development processing system 1, that is, the heat treatment of the wafer W and the photoresist. A program for realizing the application of liquid coating, development, and control of the transport path of the wafer W, so-called processing method. The processing method is created for each processing type. For example, the operator can select a processing method, and the selected processing method is read from the program storage unit 151 by the control device 150, and each crystal is executed in accordance with the processing method to be read. Round W -15- 201117257 buried. Further, in the program storage unit 151 of the control device 150, a temperature raising method for formulating a rule for controlling the temperature rise of the hot plates 112 of the heat treatment units 40 to 43 at the time of starting the application of the development processing system 1 is also stored (recipe). ). In addition, the aforementioned program is recorded on a computer readable hard disk (HD), floppy disk (FD), compact disc (CD), optical disk (MO), memory card and other computer readable memory media. It may also be installed in the control device 150 from the memory medium. The processing method of this embodiment is, for example, a setting process shown in the flowchart of Fig. 6 . The process S1 shown in Fig. 6 is a lower reflection preventing film formed by the lower reflection preventing film forming unit 31 and the heat treatment unit 41. The process S2 is to form a coating film by the photoresist coating unit 32 and the heat treatment unit 42. The upper side reflection film is formed by the upper reflection preventing film forming unit 33 and the heat treatment unit 43 in the step S3. The project S4 is exposed by the exposure device 4. In the project S5, the development processing is performed by the development processing unit 30 and the heat treatment unit 40. Next, a method of temperature control and temperature rise of the hot plate 112 of the control device 150 will be described. The set temperature of the hot plate 112 of each of the heat treatment units 40 to 43 is set to be different depending on the purpose of the heat treatment. In the present embodiment, for example, the temperatures of the hot plates 112a to 112d of the respective heat treatment units 40 to 43 are set to Ta to Td, respectively. When the hot plate 112a of the heat treatment unit 40 is heated to the set temperature Ta, for example, as shown in FIG. 7, the temperature rise period Ha1 until the hot plate 112a reaches the set temperature Ta is equivalent to the electric heater 12 as shown in FIG. The rated power of 1 - 201117257 force Pal is supplied to the electric heater 121, and the output of the power supply device (not shown) is controlled by the control device 150. When the temperature of the hot plate 1 1 2a reaches the set temperature Ta, the hot plate U2a is held at the set temperature Ta of the set temperature Ta, the control device 150 lowers the output of the power supply device, and maintains the hot plate 12a at the set temperature Ta, that is, Control is performed to supply electric power Pa2 corresponding to a portion that supplements heat radiated from the hot plate 112 to the outside. The same applies to the hot plates 112b to 112d of the other heat treatment units 41 to 43. In the temperature raising method stored in the program storage unit 151, the order in which the temperature rise of the hot plates 112a to 112d of the heat treatment units 40 to 43 is started and the timing at which the temperature rise is started are set. The temperature rising method of the present embodiment is sequentially performed in the order of processing of the wafer W set in the processing method, that is, the heat treatment unit 41 used in the process S1, the heat treatment unit 42 used in the process S2, and the process S3. The order of the temperature rise start is set such that the heat treatment unit 43 and the heat treatment unit 40 used in the process S5 start to increase the temperature. When the temperature rise of the temperature rising method is started, for example, as shown in FIG. 9, the hot plate 1 1 2b of the heat treatment unit 4 1 that has started the temperature rise first reaches the set temperature Tb after the temperature rising period Hb 1 , and is set to the temperature in the temperature raising method. The temperature rise of the two heated hot plates 1 12c will be started. In addition, the order of the temperature rise start of each of the hot plates 1 12a to 1 1 2d set in the temperature rising method, and the timing of the temperature rise start can be arbitrarily changed by, for example, an operator. The coating development processing system 1 of the present embodiment is configured as described above, and the wafer processing performed by the substrate processing system 1 configured as described above will be described next. When the base 17-201117257 plate process shown in the flowchart of FIG. 6 is performed by applying the development processing system 1, first, the hot plates 112a of the respective heat treatment units 40 to 43 are started in the order set in the temperature increase method. ~112d warming up. When the temperature rise of each of the heat treatment units 40 to 43 is started, as shown in Fig. 10, first, the hot plate 1 12b of the heat treatment unit 41 is heated to the set temperature Tb. At this time, the control unit 15 5 控制 controls the electric power 'from the power supply device (not shown) to the electric heater 121 of the hot plate 112 b to reach the set temperature Tb during the temperature rise period H b b, as shown in FIG. 11 . The electric power Pbl corresponding to the rated enthalpy is supplied to the electric heater 1 2 1 » Once the temperature rise period Hb 1 passes and the temperature of the hot plate 1 1 2 b reaches the set temperature Tb, the control device 150 supplies the heat to the heat. The electric power of the board 1 12b is reduced to Pb2, and the temperature rise of the hot plate 112c of the heat treatment unit 42 is started. At this time, the heat radiated from the heat treatment unit 41 is transmitted to the heat treatment unit 42, whereby the hot plate 112c is compared with the initial state of the temperature ATc, and the temperature rises. When the temperature rise of the hot plate 1 12c is started, the electric power Pci corresponding to the rated electric power of the electric heater 121 is supplied as the hot plate 1 12b reaches the set temperature Tc, and the hot plate 1 12c is passed once the temperature rise period Hcl passes. When the set temperature Tc is reached, the supply amount of electric power is reduced to the electric power Pc2 by the control device 150, and the electric power Pd1 is supplied to the hot plate U2d of the heat treatment unit 43, and the temperature rise of the hot plate 11 2d is started. In the hot plate 112d, while the temperature rise of the heat treatment units 41, 42 is being performed, only a predetermined temperature rise is formed by the heat radiated from the heat treatment units 41, 42. Once the heating period Hdl of the hot plate 11 2d passes and the hot plate 112d reaches the set temperature Td, the supply amount of electric power is reduced to the electric power Pd2, and the electric power Pal is supplied to the hot plate 1 12a of the heat treatment unit 40, similarly Start the heating of the hot plate 〖12a. Further, at this time, the power consumption of the coating development processing system 1 of -18-201117257 is the formation peak Pm. When the heating period Hal of the hot plate 112a passes and the hot plate 112a reaches the set temperature Ta, the supply amount of electric power is reduced to Pa2 by the control device 150. When the temperature rise of all the hot plates 112a to 112d of the respective heat treatment units 40 to 43 is completed, the processing of the wafer W is started in accordance with the processing method. In the processing of the wafer W, first, the cassette C accommodating the plurality of wafers W is placed on the predetermined cassette mounting plate 13 of the cassette station 10. Then, the substrate W in the cassette C is sequentially taken out by the substrate carrying device 21, and transported to the transfer device 53 of the third processing device group G3 of the processing station 1 for example. Next, the wafer W is transported to the heat treatment unit 41 of the second block G.2 by the wafer transfer device 71, and the temperature adjustment process is performed by the cooling plate 113. Then, the wafer W is transported to the lower anti-reflection film forming unit 3 1 of the first block G I by the wafer transfer device 71, and a lower anti-reflection film is formed on the wafer W. Then, the wafer W is transported to the heat treatment unit 41 of the second block G2, and the heat treatment is performed by the hot plate 112 (the process S1 of Fig. 6). Then, it returns to the handover unit 53 of the third block G3. Next, the wafer W is transported to the delivery unit 54 of the third block G3 by the wafer transfer device 90. Then, the wafer W is transported to the heat treatment unit 42 of the second block G2 by the wafer transfer device 72, and the temperature is adjusted by the cooling plate 113. Then, the wafer W is transferred to the photoresist applying unit 3 2 of the first block G 1 by the wafer transfer device 72, and a photoresist film is formed on the wafer W. Then, the wafer W is transported to the heat treatment unit 42 by the wafer transfer device 72, and the pre-baking process is performed by the hot plate 112 (engineering S2 of Fig. 6) -19-201117257. Then, the wafer w is returned to the delivery unit 55 of the third block G3 by the wafer transfer device 72. Next, the wafer W is transported to the delivery unit 54 of the third block G3 by the wafer transfer device 90. Then, the wafer W is transported to the heat treatment unit 43 of the second block G2 by the wafer transfer device 73, and the temperature is adjusted by the cooling plate 113. Then, the wafer W is transported to the upper anti-reflection film forming device 33 of the first block G1 by the wafer transfer device 73, and an upper anti-reflection film is formed on the wafer W (the process S3 of Fig. 6). Then, the wafer W is transported to the delivery unit 56 of the third block G3 by the wafer transfer device 73. Next, the wafer W is transported to the delivery unit 52 by the wafer transfer device 90, and transported to the delivery unit 62 of the fourth block G4 by the shuttle transport device 80. Then, the wafer W is transported to the exposure device 6 by the wafer transfer device 100 of the interface station 7, and exposure processing is performed (the process S4 of Fig. 6). Next, the wafer W is transported to the delivery unit 60 of the fourth block G4 by the wafer transfer apparatus 100. Then, the wafer W is transferred to the heat treatment unit 40 by the wafer transfer device 70, and subjected to post-exposure baking treatment. Next, the wafer W is subjected to temperature adjustment processing by the cooling plate 113, and then transported to the development processing unit 30 by the wafer transfer device 70 to be developed. After the development is completed, the wafer W is transferred to the heat treatment unit 40 by the wafer transfer device 70 to perform post-baking treatment. Then, the wafer W is cooled by the cooling plate 113 (engineering S 5 of Fig. 6). Then, the wafer W is transported to the delivery unit 50 of the third block G3 by the wafer transfer device 70, and then transferred to the card of the predetermined mounting plate 14 by the wafer transfer device 21 of the cassette station 4.匣C. In this way, a series of 20-201117257 is completed to be transported to the cassette C of the predetermined mounting plate 14. In this way, a series of processes (photoetching process) is completed, and a predetermined photoresist pattern is formed on the wafer W. According to the above embodiment, when the development processing system 1 is started, it is based on the temperature rising method. Since the temperature rise of the hot plates 112a to 112d of each of the heat treatment units 40 to 43 is performed stepwise, the peak of the power consumption at the time of starting the application of the development processing system 1 can be reduced. Therefore, in comparison with the conventional heating of the heat treatment units 40 to 43, the capacity of the power device provided in the upper position of the power system of the application development processing system 1 can be reduced. Thereby, the cost of setting up the power device can be reduced. In addition, since the difference between the power consumption at the time of peaking and the power consumption during normal operation is small at the time of starting the application of the development processing system 1, the coating development can be performed at a point closer to the rated point than in the related art. An electric device such as a transformer provided in the upper position of the system 1 is processed. Therefore, the efficiency of the operation of the electric equipment is increased, and the loss of energy can be reduced. Further, in the temperature rise of the heat treatment units 40 to 43, the heat is radiated from the heat treatment unit that has been heated up or the heat treatment unit during the temperature rise to the other heat treatment unit, and the temperature is increased. Therefore, the heat treatment units 40 to 29 can be shortened. The time required for the temperature rise of 43. Further, in the above embodiment, after the temperature rise of each of the heat treatment units 40 to 43 is completed, the loading of the wafer W into the coating development processing unit 1 is started, but all of the heat treatment units 40 to 43 may be used. When the temperature rise is completed, the wafer W is carried into the coating development processing unit 1, and when the wafer W is heated in the processing order of the wafer W set in the processing method, the heat treatment unit 21 - 201117257 40 to 43 is heated. The timing at which the temperature rise of each of the heat treatment units 40 to 43 is started is controlled so that the temperature rise of each of the heat treatment units 40 to 43 can be completed in advance. Specifically, for example, when the temperature is raised by the program shown in FIG. 10, the time required for the wafer W carried into the coating development processing unit 1 to be carried into the heat treatment unit 42 according to the processing method is higher than the heat of the heat treatment unit 42. The temperature rise period Hcl of the plate 1 12c is short Hx. Then, when the wafer W is loaded into the coating development processing unit 1 at the time when the temperature rise of the hot plate 1 1 2b of the heat treatment unit 41 is completed, the time at which the wafer W is transferred to the heat treatment unit 42 in accordance with the processing method is heat treatment. The temperature rise of the unit 42 is not completed, and the processing of the wafer W is stagnant. In this case, for example, as indicated by a broken line in Fig. 10, if the temperature rising method is set in advance, the timing of starting the hot plate 12c of the heat-treating heat treatment unit 42 is not the temperature rise of the hot plate 112b after the temperature rise of the hot plate 11b is completed. In the middle, when the temperature rise of the hot plate 1 12b is completed and the temperature rise of the hot plate 12c is completed, the temperature rise is shorter than the time Hx, and the temperature rise of the hot plate 112c can be appropriately controlled by the control device 150 without the wafer W. The situation of dealing with stagnation. Further, under the control of the temperature rise as described above, the waiting time from the start of the application of the coating development processing system 1 to the start of the processing of the wafer W can be shortened, so that the productivity of the coating development processing system 1 can be improved. The method of avoiding the stagnation of the processing of the wafer W of the hot plates 1 12d and 1 12a which are heat-treated after the hot plate 112c is the same, and therefore the description thereof will be omitted. Further, by the timing at which the temperature rise of each of the hot plates 112a to 112d is started, for example, as indicated by a broken line in FIG. 11, it is possible that the electric power corresponding to the rated electric power of the electric heater 1 2 1 is simultaneously supplied to each heat treatment unit 4 〇~43 The number of heat treatment units. In this case, there is a fear that the power consumption of the power supply system that exceeds the upper level of the power consumption of the coating processing system 1 is -22-201117257, for example, the protection relay provided in the power system is tripped. Therefore, in order to prevent such a jump of the protective relay or the like, for example, a detecting means 152 for monitoring the total amount of electric power supplied to the electric heaters 121 of the respective heat treatment units 4 to 43 may be provided by the control means 150. The control of the amount of electric power supplied to each of the heat treatment units 40 to 43 is restricted, and the total amount of the consumed electric power detected by the detecting means 152 does not exceed a predetermined value, for example, the setting of the protection operation of the protective relay or the like. . When the amount of electric power supplied to each of the heat treatment units 40 to 43 is limited so as not to exceed the setting of the protection operation of the protection relay or the like, for example, the order of the heat treatment of the wafer W set in the processing method may be reversed. In the present embodiment, in the present embodiment, the amount of electric power supplied to each heat treatment unit is reduced in the order of the heat treatment units 40, 43, and 42'. In this way, even if it is necessary to limit the amount of electric power supplied to each of the heat treatment units 40 to 43 by the control device 150, the heat treatment units 40 to 43 can be continued in accordance with the processing order of the wafer W set in the processing method. Warming up. Therefore, there is no possibility that the processing of the wafer W is interrupted because the temperature rise of the hot plate 112 is not completed. In the above embodiment, one electric heater 1 2 1 ' is provided for one hot plate 112. However, as shown in FIG. 12, for example, the hot plate 1 1 2 is divided into three fields A to D3 concentrically. The electric heater 121' is provided in each of the fields, and the temperature is set in each area. Thus, in the case where the hot plate 1 1 2 is provided with a plurality of fields a to A3, for example, when the hot plate 1 1 2 is heated, it can be viewed from the outer side of the hot plate 1 1 2 to the inner side, that is, according to the field A1 to the field A3. 23- 201117257 The sequence begins to heat up. By this, the heat of the field A1 is transmitted to the direction of the field A3, and the amount of electric power required for the temperature rise of the hot plate II2 can be further suppressed. Further, in Fig. 12, three fields A1 to A3 are drawn, but the number of divisions is not limited to three, and the shape of the division may not be concentric, and may be, for example, a fan shape or the like. Further, when the amount of electric power supplied to each of the heat treatment units 40 to 43 is limited by the control device 150, for example, it is not necessary to simultaneously limit the supply of electric power to all of the electric heaters 1 2 1 of the fields A 1 to A3 of the hot plate 112. For example, it is controlled so as to be limited by the inner field, that is, the order from the field A3 to the field A1. As a result, even if the amount of electric power supplied to the field A2 and the field A3 is limited by the control device 150, the temperature rise of the field A1 and the field A2 can be performed, for example, by heat conduction from the field A1. Further, in the temperature rising method of the above embodiment, the order of temperature rise is set such that the order of temperature rise of the heat treatment units 40 to 43 is the same as the order of heat treatment of the wafer W of the processing method, but the temperature rise method is set. In the order in which the temperature rise is started, for example, the temperature rise is started from the start of the temperature rise of the hot plate 112 to the time when the temperature rise is completed, or the heat treatment units 40 to 43 stacked in the vertical direction are placed under the heat treatment. The order in which the unit 40 is placed in the upper heat treatment unit 43 starts to increase temperature. When the temperature rise from the start of the temperature rise of the hot plate 112 to the time when the temperature rise is completed, for example, in the order of the time required for the temperature rise in FIG. 10, the hot plates 1 12c, 1 12a, 1 12b, Set the temperature rise method by the order of 1 12d. When the temperature raising method is set as described above, for example, as shown in Fig. 13, the temperature rise of the hot plates 1 12a to 1 12d of the respective heat treatments -24 - 201117257 units 40 to 43 is performed. In this case, the hot plate having a short heating time, for example, the hot plate 11 2c, can reach the set temperature Tc and then transfer the heat to the other heat treatment unit with less electric power. Further, according to the inventors' verification, for example, the heat radiated from the heat treatment unit 41 is more easily transmitted to the heat treatment unit 42 than the heat treatment unit 40. That is, the heat radiated from a single heat treatment is more easily conveyed to the heat treatment unit located above than the heat treatment unit located below. Therefore, the heat treatment units 4A to 43 can be heated from the bottom to the top, that is, in the order of the heat treatment units 40, 41, 42, and 43. In this case, the temperature rise of each of the heat treatment units 40 to 43 can be performed most efficiently. Further, for example, when the heat treatment units 40 to 43 are heated up in the order from the bottom to the top, or when the temperature rise time of the heat treatment unit 40 is shortened, the temperature may be raised in the program storage unit of the control device 150. 1 5 1 The respective temperature rising methods are stored, and a plurality of temperature rising methods are selected in combination at the start of application of the development processing system 1. Further, when a plurality of temperature raising methods are simultaneously selected, it is also possible to select which of the temperature raising methods is preferentially implemented. A description will be given of the case where the temperature rising method of the plural is selected at the same time. For example, the temperature of the hot plates 112a to 112d of the heat treatment units 40 to 43 is set to be different for each of the regions 201 to 208 in order to correspond to the plurality of processing methods, for example, as shown in FIG. 14 in each of the heat treatment units 40 to 43. value. In FIG. 14, for example, the set temperatures of the regions 204 and 207 are 180 ° C, the set temperature of the region 201 is 200 t, the set temperatures of the regions 202, 205, 206, and 208 are 250 ° C, and the set temperature of the region 203 is set at 350 °C. The order of temperature rise is selected by the temperature rising method in accordance with the order of the processing method, and the temperature of the heat treatment unit 40 - 25 - 201117257 - 43 is increased from the bottom to the top, and the temperature is sequentially selected according to the processing method. Further, the heat treatment of the processing method is performed in the order of the regions 201 to 208. In this case, for example, as shown in Fig. 15, first, in the processing method, the temperature rise of the regions 201 and 202 where the wafer W is first heat-treated, and the region 207 disposed at the lowermost portion are started. Then, when the temperature rise of the region 207 having the lowest temperature is completed, the temperature rise of the region 203 in which the wafer W is heated and the region 208 disposed in the lowermost region of the region 202 is started (period K1 in Fig. 15). Then, when the region 201 reaches the set temperature, the temperature rise of the region 204 of the region 203, which is followed by the heat treatment of the wafer W, starts (period K2 in Fig. 15). Then, the region 202 reaches the set temperature, and the region 2 04 that has been previously warmed up by the heat transfer from the region 201 or the region 202 also reaches the set temperature, and the region 204 of the region 204 is heated up by the heat treatment of the wafer W. It will start (period K3 in Figure 15). Then, when the region 204 reaches the set temperature, the temperature rise of the region 206 is started (period K4 in Fig. 15), and the temperature rise of the hot plate is not completed in all the regions. Further, when the complex temperature increasing method is selected as described above, it is of course possible to restrict the supply of electric power to the electric heater 121 by the control device 150. At this time, the limitation of the electric power is controlled so as to sequentially limit the electric power by the last temperature rise starter in the selected temperature rising method. The preferred embodiments of the present invention have been described above with reference to the drawings, but the present invention is not limited to the examples. As long as it is the person in charge, it is possible to think of various modifications or modifications in the scope of the invention described in the scope of the patent application, and of course, these are also within the technical scope of the present invention. The present invention is not limited to this example, and various forms can be employed. The present invention is also applicable to a case where the substrate is an FPD (planar right-angle display) other than the wafer, or a mask such as a mask for a photomask. [Industrial Applicability] The present invention is useful for raising the temperature of a heating device for a substrate processing system. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic plan view showing the internal structure of a coating development processing system according to an embodiment of the present invention. Fig. 2 is a schematic side view showing the internal structure of a coating development processing system of the embodiment. Fig. 3 is a schematic side view showing the internal structure of the coating development processing system of the embodiment. 4 is a schematic cross-sectional view showing a configuration of a heat treatment unit. Fig. 5 is a schematic longitudinal cross-sectional view showing a configuration of a heat treatment unit. Fig. 6 is a flow chart showing each process of wafer processing. Fig. 7 is a graph showing temperature fluctuations of a hot plate at the time of temperature rise. Fig. 8 is a graph showing a change in the amount of electric power supplied to the hot plate at the time of temperature rise. Fig. 9 is a graph showing the timing of starting the hot plate. Fig. 10 is a graph showing temperature fluctuations of a hot plate at the time of temperature rise. -27- 201117257 Figure Π is a graph showing the fluctuation of the amount of power supplied to the hot plate during temperature rise. Fig. 12 is a plan view showing a configuration of a hot plate. Fig. 13 is a graph showing temperature fluctuations of a hot plate during temperature rise. Fig. 14 is a schematic explanatory view showing the configuration of a heat treatment unit and a set temperature; Fig. 15 is a graph showing temperature fluctuations of a hot plate at the time of temperature rise. [Description of main component symbols] 1 : Coating development processing system 2 : Card station 3 : Processing station 4 : Exposure device 5 : Interface station 1 : Card loading unit 晶圆 : Wafer transfer unit 12 : cassette mounting table 13 : cassette mounting plate 20 : conveying path 2 1 : wafer transfer device 3 : development processing unit 3 1 : lower reflection preventing film forming unit 3 2 : photoresist coating unit 3 3 : upper reflection preventing film Forming unit-28- 201117257 4 0 ~ 50~ 6 0 ~ 70~ 80 : 90 : 100 110 111 112 113 12 1 122 123 124 125 126 13 1 132 133 134 13 5 150 15 1 43 : Heat treatment unit 5 6 : Handover Unit 62: delivery unit 73: wafer transfer device shuttle transfer device wafer transfer device: wafer transfer device: processing container: carry-out inlet: hot plate: cooling plate: electric heater: through hole: lift pin: lift drive mechanism: Holding member: Support ring: Through hole: Lifting pin = Lifting drive mechanism: Holding member: Support ring: Control device: Program storage unit -29- 201117257 152: Detection means 201 to 208: Area W: Wafer F: Cup D: Wafer transfer field C: Karma-30-