TWI264050B - Cooling systems and apparatuses thereof for temperature control of semiconductor - Google Patents

Cooling systems and apparatuses thereof for temperature control of semiconductor Download PDF

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Publication number
TWI264050B
TWI264050B TW094125903A TW94125903A TWI264050B TW I264050 B TWI264050 B TW I264050B TW 094125903 A TW094125903 A TW 094125903A TW 94125903 A TW94125903 A TW 94125903A TW I264050 B TWI264050 B TW I264050B
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Taiwan
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porous
layer
contact layer
cooling device
flow
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TW094125903A
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Chinese (zh)
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TW200605178A (en
Inventor
Yi-Li Hsiao
Tse-Yi Chen
Jerry Hwang
Chin-Hsin Peng
Jean Wang
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Taiwan Semiconductor Mfg
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

Cooling systems and apparatuses are provided. An exemplary embodiment of system includes a fluid medium circulating device and a cooling apparatus connected to the electrostatic chuck. The cooling apparatus comprises an inlet, an outlet, a porous flow layer, a porous contact layer contacting the electrostatic chuck, and a porous heat exchange layer disposed between the flow layer and the contact layer. The inlet communicates with the flow layer, and the outlet communicates with the contact layer. The fluid medium is introduced into the flow layer from the inlet and sequentially flows through the heat exchange layer and the contact layer. The fluid medium is discharged from the contact layer through the outlet, thereby exchanging heat from the semiconductor wafer. The fluid medium circulating device connects the inlet and the outlet and circulates the fluid medium.

Description

1264〇5〇 九、發明說明： 【發明所屬之技術領域】 、本舍明係有關於-種半導體晶圓的溫度控制系統，制係有關於—種 適用於積體電路之製程巾半導體晶圓之溫度控儀統，其巾前述半導體晶 圓係固定於一靜電承載座上。 【先前技術】1264〇5〇9, Invention Description: [Technical Fields of the Invention] This publication relates to a temperature control system for a semiconductor wafer, and relates to a semiconductor wafer for a process paper suitable for an integrated circuit. In the temperature controller system, the semiconductor wafer of the towel is fixed on an electrostatic carrier. [Prior Art]

在白知半導體7L件的製造過財，靜電承載錢經倾絲固定—物 ^例如可將靜電承载座可設置於—製程反應腔室内，藉以固定—半導體 曰曰圓…般㈣，瞒靜電承載贿在高精度的半導體餘巾使用，例如 理氣相沉積(PVD)、化學氣相沉積(CVD)、濺鍍相關製程或者餘刻 衣私等等’其巾靜包承載座之主要功用在於：可透過靜電力穩固地吸附半 導體晶圓，進喊到精密定位之目的，同日福此可利於在半導體晶圓切 成薄膜以及其他特定結構。 夕 A由=溫度的變化往往是影響半導體製程良率的重要因素，為了達到特 „Critkal Dimension)要求’靜電承载座_般係必須在—溫度穩定: 衣妓^巾使用。為了避免製程温度的細變化影響產品的品質盘良、 對於半導體晶®的溫度控顯得相#重要，尤其在—轉加熱或 製程中，更需要隨時地保持晶圓溫度的穩定。 /恤、 習知美國專利u.s•娜，218(Mayer et ai)揭露了—種可防 晶圓之靜電承载座結構，如第〗圖所示，其靜電減座結構轉包 撐體Β以及-蓋板D，上述餘D位設置於支擇體β上方，In the manufacture of Baizhi Semiconductor 7L parts, the electrostatic load is fixed by the tilting wire. For example, the electrostatic carrier can be placed in the process chamber, so that the semiconductor can be fixed (four). Bribe in the use of high-precision semiconductor waste towels, such as vapor deposition (PVD), chemical vapor deposition (CVD), sputtering related processes or remnant clothing, etc. The main function of the towel static carrier is: The electrostatic adsorption of semiconductor wafers is firmly carried out, and the purpose of precision positioning is to facilitate the cutting of thin films and other specific structures on semiconductor wafers. The change of temperature from the A is often an important factor affecting the yield of the semiconductor process. In order to meet the requirements of the “Critkal Dimension”, the 'electrostatic carrier' must be in-temperature stable: the use of clothing is used. To avoid the process temperature Fine changes affect the quality of the product, and the temperature control of the Semiconductor Crystal® is important. Especially in the heating or process, it is necessary to keep the temperature of the wafer stable at any time. / Shirt, US patent US • Na, 218 (Mayer et ai) discloses a structure that can prevent the electrostatic carrier of the wafer. As shown in the figure, the static reduction structure is transferred to the support body and the cover D, and the remaining D bits are set. Above the support body β,

則位於蓋板D中央之-_D1内。於第i辭，前述切體3之=A 置具有-Μ狀之突出部Β1，—靜電赌體£則設置於前述突出部則丄， 此外一金屬電極Ε1設置於靜電吸附體Ε内部，並連接一一’ 特別地是，在支撐體i内部設有複數個通道m，藉由使一工===It is located in the center of the cover D - _D1. In the first sentence, the cutting body 3 has a protrusion-shaped protrusion Β1, and the electrostatic gambling body is disposed on the protruding portion, and the metal electrode Ε1 is disposed inside the electrostatic adsorption body ,. Connection one by one' In particular, a plurality of channels m are provided inside the support body i by making a work ===

0503-A30939TWF 5 1264050 B二内流動’可以用來冷部上方的晶圓a。 【發明内容】 本發明提供一種冷卻系統，藉由使一工作流體流經冷卻系統内部，藉 以控制一半導體晶圓之溫度，其中半導體晶圓係固定於一靜電承載座。上 述冷卻裝置包括一多孔隙流動層、一多孔隙接觸層、一多孔隙熱交換層、 一入口端、一出口端以及循環裝置。前述多孔隙接觸層連接靜電承載座。 月；1述多孔隙熱交換層設置於多孔隙流動層與多孔隙接觸層之間。前述入口 φ 端連接多孔隙流動層，出口端則連接多孔隙接觸層，其中工作流體自入口 端依序流經多孔隙流動層、多孔隙熱交換層以及多孔隙接觸層，並經由出 口端流出多孔隙接觸層，藉以與半導體晶圓進行熱交換。前述循環裝置連 接入口端以及出口端，用以驅動工作流體循環地於冷卻系統内流動，並使 得工作流體於冷卻系統内形成一迴路。 於一較佳實施例中，前述多孔隙流動層具有複數個開孔，分別連接入 口端，工作流體係由入口端經過前述開孔流入多孔隙流動層。 於一較佳實施例中，前述開孔係設置於冷卻裝置之底部。 於一較佳實施例中，前述多孔隙接觸層具有一環狀空間，環繞於多孔 隙翻層外圍並連接前述端。 於一較佳實施例中，前述多孔隙接觸層之密度小於多孔隙熱交換層之 密度。 於一較佳實施例中 於一較佳實施例中 於一較佳實施例中 於一較佳實施例中 於一較佳實施例中 於一較佳實施例中 ’前述多孔隙流動層具有複數個管狀結構。 ’前述多孔隙流動層具有複數個柱狀結構。 ，前述多孔隙流動層具有一網狀結構。 ，前述多孔隙熱交換層具有複數個管狀結構。 ’前述多孔隙熱交換層具有複數個柱狀結構。 ’前述多孔隙熱交換層具有一網.狀結構;。 0503-A30939TWF 6 1264050 於-較佳實施例中，前述多孔隙熱交換層呈有銀。 於—較佳實施例中，前述多孔隙熱交換層呈有銅。 於-較佳實施财’前述多孔隙_層具魏數條狀結構。 於-較佳實施例中，前述多孔隙接觸層具有複數餘狀結構。 於-較佳實施例中，前述纽_觸層具有—網狀結構。 於:較佳實施例中，前述魏裝置具有_幫浦，驅動工作流體循環地 方;々部系統内流動。 為使本明之上述及其他目的、特徵和優職更明顯紐，下文特舉 具體之較佳實細，並配合所關歧詳細說明。 【實施方式】 首先請第2圖，本發明之冷卻系統1〇主要係用以冷卻一半導體晶圓A， •其中上述半導體晶圓A係固定於一靜電承載座c上。於本實施例中，冷卻 ，系、先10主要包括一冷伸裝置C’以及-循環裝置(未圖示），其中冷卻裝置c， 連接於靜電承載座c下方。 真如第2圖所示，4述冷卻裝置C’具有一本體M，在本體M底部以及側 φ 邊則分別設有一入口端1以及複數個出口端2。特別地是，前述本體Μ係 由一個夕孔隙層所構成，其中冷卻裝置c,可連接_循環裝置(未圖示），並 透過循環裝置驅動一工作流體於上述冷卻裝置c，内循環地流動。舉例而 a，上述循環裝置可為一幫浦，分別連接於前述入口端1以及出口端2，藉 此可驅動工作流體形成一迴路，其中前述工作流體可以採用水、乙二醇， 或者水和乙二醇的混合物。 於弟2圖中’本體Μ包括一多孔隙流動層3、一多孔隙熱交換層4以 及一多孔隙接觸層5,其中多孔隙熱交換層4設置於多孔隙流動層3以及多 孔隙接觸層5之間。特別地是，在多孔隙流動層3底部設有複數個開孔6， 上述開孔6係與入口端1相連接，工作流體可由入口端丨經過開孔6而流 0503-A30939TWF 7 1264050 八本體M。此外、前述出口端2則係連接於多孔隙接觸層5外圍，如此一 來，前述工作流體可以經由入口端1以及出口端2流入/流出本體M(如第2 圖中箭頭所示），並形成一循環迴路。0503-A30939TWF 5 1264050 B inside flow ' can be used for wafer a above the cold part. SUMMARY OF THE INVENTION The present invention provides a cooling system for controlling the temperature of a semiconductor wafer by passing a working fluid through the interior of the cooling system, wherein the semiconductor wafer is attached to an electrostatic carrier. The cooling device includes a porous flow layer, a porous contact layer, a porous heat exchange layer, an inlet end, an outlet end, and a circulation device. The aforementioned porous contact layer is connected to the electrostatic carrier. The porous heat exchange layer is disposed between the porous flow layer and the porous contact layer. The inlet φ end is connected to the porous flow layer, and the outlet end is connected to the porous contact layer, wherein the working fluid flows through the porous flow layer, the porous heat exchange layer and the porous contact layer from the inlet end sequentially, and flows out through the outlet end. A porous contact layer for heat exchange with a semiconductor wafer. The circulation device is connected to the inlet end and the outlet end for driving the working fluid to flow in the cooling system cyclically, and to make the working fluid form a circuit in the cooling system. In a preferred embodiment, the porous flow layer has a plurality of openings, respectively connected to the inlet end, and the working fluid system flows from the inlet end into the porous flow layer through the openings. In a preferred embodiment, the opening is provided at the bottom of the cooling device. In a preferred embodiment, the porous contact layer has an annular space surrounding the periphery of the porous layer and connecting the ends. In a preferred embodiment, the density of the porous contact layer is less than the density of the porous heat exchange layer. In a preferred embodiment, in a preferred embodiment, in a preferred embodiment, in a preferred embodiment, in a preferred embodiment, the aforementioned porous flow layer has a plurality A tubular structure. The aforementioned porous flow layer has a plurality of columnar structures. The aforementioned porous flow layer has a network structure. The foregoing porous heat exchange layer has a plurality of tubular structures. The aforementioned porous heat exchange layer has a plurality of columnar structures. The aforementioned porous heat exchange layer has a mesh-like structure; 0503-A30939TWF 6 1264050 In a preferred embodiment, the aforementioned porous heat exchange layer is silver. In a preferred embodiment, the porous heat exchange layer is copper. The above-mentioned porous layer has a Wei number strip structure. In a preferred embodiment, the porous contact layer has a plurality of cohesive structures. In a preferred embodiment, the aforementioned ruthenium layer has a network structure. In the preferred embodiment, the Wei device has a pump that drives the working fluid to circulate; the inside of the jaw system flows. In order to make the above and other objects, features and advantages of the present invention more obvious, the following is a detailed description of the details and details. [Embodiment] First, in FIG. 2, the cooling system 1 of the present invention is mainly used for cooling a semiconductor wafer A. The semiconductor wafer A is fixed to an electrostatic carrier c. In the present embodiment, the cooling system 10 includes a cold stretching device C' and a circulation device (not shown), wherein the cooling device c is connected below the electrostatic carrier c. As shown in Fig. 2, the cooling device C' has a body M, and an inlet end 1 and a plurality of outlet ends 2 are respectively provided at the bottom of the body M and at the side φ side. In particular, the body raft is composed of a layer of latitude, wherein the cooling device c is connectable to a circulation device (not shown), and a circulating fluid is used to drive a working fluid to the cooling device c to circulate internally. . For example, a, the circulation device may be a pump connected to the inlet end 1 and the outlet end 2 respectively, thereby driving a working fluid to form a circuit, wherein the working fluid may be water, ethylene glycol, or water and a mixture of ethylene glycol. In Figure 2, the 'body' includes a porous flow layer 3, a porous heat exchange layer 4, and a porous contact layer 5, wherein the porous heat exchange layer 4 is disposed in the porous flow layer 3 and the porous contact layer. Between 5 In particular, a plurality of openings 6 are formed in the bottom of the porous flow layer 3, the openings 6 are connected to the inlet end 1, and the working fluid can flow from the inlet end through the opening 6 and flow 0503-A30939TWF 7 1264050 M. In addition, the outlet end 2 is connected to the periphery of the porous contact layer 5, so that the working fluid can flow into/out the body M via the inlet end 1 and the outlet end 2 (as indicated by the arrow in FIG. 2), and Form a loop.

接著請參閱第3a圖，該圖係表示本發明中多孔隙流動層3的上視圖。 於一較佳實施例中，多孔隙流動層3可為網狀結構，然而亦可採用具有複 數個官狀或柱狀結構所組成之多孔隙材質，如此一來當工作流體由開孔6 進入本體Μ後可迅速地在多孔隙流動層3内部流動，同時可均勻地擴散至 多孔隙流動層3與多孔隙熱交換層4間_接面。上述多孔隙流動層3不 僅可用以支撐上方多孔雜交換層4,同時藉由使王作越在多孔隙流動層 3中迅速地流動，可提升整體溫度分佈之均勻性。 夕再請荼閱第3b目，該圖係表示多孔隙熱交換層4的上視圖。如同前述 纽隙流動層3，多孔_交換層4可為網狀結構，然而亦可採用具有複數 個管狀或柱狀結構所組成之多孔赌f。特別地是，在多孔隙熱交換^ 中更具有高導熱性材質，例如銀、銅轉他合金材質。如第3b圖所示:前 述夕孔隙熱交換層4㈣具有均⑽佈之複數個微小絲7，藉此可以使來 自多孔隙流動層3的工作流體均勻地分散於多孔隙熱交換層4内部。於本 發财，融多·熱錢層4可有效地使1作越在二維方向(如第％ 圖所不之平面)上的均勻地擴散，因此主要來自半導體晶圓A背面所產生 熱可以充分耻纽_交_ 4 _與轉越進行齡換，進而 效地改善半導體晶圓A整體溫度均勻性。 於第2以及3C圖中’前述多孔隙接觸層5係位於本體Μ中三個多孔隙 =的最t層’並且和用以固定半導體晶圓Α之靜電承载座C相連 本貝％例中，轉體關Α可視為—熱源，透過上述麟可 圓A所產生的熱經由靜電承龜c傳遞至纽隙接觸層5 隙接觸層5於工作流觀賴雜。於—健實翻巾 觸層5可包含將細讀，例域、_其他合金 順、接Next, please refer to Fig. 3a, which shows a top view of the porous flow layer 3 of the present invention. In a preferred embodiment, the porous flow layer 3 may be a mesh structure, but a porous material having a plurality of official or columnar structures may be used, so that when the working fluid enters through the opening 6 The body can be quickly flowed inside the porous flow layer 3 while being uniformly diffused to the inter-porous flow layer 3 and the porous heat exchange layer 4. The above porous flow layer 3 can be used not only to support the upper porous miscellaneous exchange layer 4, but also to improve the uniformity of the overall temperature distribution by allowing the king to flow rapidly in the porous flow layer 3. Further, please refer to item 3b, which shows a top view of the porous heat exchange layer 4. Like the aforementioned gap flow layer 3, the porous exchange layer 4 may be a network structure, but a porous bet having a plurality of tubular or columnar structures may also be employed. In particular, it has a highly thermally conductive material such as silver or copper-transfer alloy in the porous heat exchange. As shown in Fig. 3b, the foregoing porphyrous heat exchange layer 4 (4) has a plurality of fine filaments 7 of a uniform (10) cloth, whereby the working fluid from the porous flow layer 3 can be uniformly dispersed inside the porous heat exchange layer 4. In this fortune, the Rondo Hot Money Layer 4 can effectively spread 1 uniformly in the two-dimensional direction (such as the plane of the % map), so the heat generated mainly from the back side of the semiconductor wafer A can be Full shame _ _ _ 4 _ and transfer to change the age, and then effectively improve the overall temperature uniformity of the semiconductor wafer A. In the 2nd and 3Cth drawings, 'the aforementioned porous contact layer 5 is located in the bulk layer of the three most porous = the most t-layer' and is connected to the electrostatic carrier C for fixing the semiconductor wafer cassette. The rotating body can be regarded as a heat source, and the heat generated by the above-mentioned Linkeyuan A is transmitted to the gap contact layer 5 through the electrostatic carrier c to the working layer.于—健实翻巾 Touch layer 5 can contain fine reading, example domain, _ other alloys

0503-A30939TWF 1264050 如弟％圖所示，前述出口端2係與多孔隙接觸層5外圍之—環形空間 =通，工作流體可由多孔雜觸層5中央㈣流至獅㈣η後，再經 =出:端2流峨Μ。接著請_併軸％以及％圖，複數個柱狀體9 =佈於多接觸層5内部，藉以形成—多孔隙結構，其中工作流體可 雕柱狀9間所形成的空隙8迅速地向外移動。制地是，前述工作流 =可以朝各個不財向流向多孔隙翻㈣5外_環形空間H，如此可有 利於工作流體迅速地由各出口端2排出本體Μ。0503-A30939TWF 1264050 As shown in the figure %, the outlet end 2 is connected to the periphery of the porous contact layer 5 - the annular space = pass, and the working fluid can flow from the center (4) of the porous contact layer 5 to the lion (four) η, and then = : End 2 rogue. Then, _ parallel axis % and % map, a plurality of columnar bodies 9 = cloth inside the multi-contact layer 5, thereby forming a multi-porous structure, wherein the working fluid can be carved into the columnar spaces 9 formed by the gaps 8 rapidly outward mobile. The system is that the aforementioned workflow = can flow toward the non-conservative flow to the porous (four) 5 outer - annular space H, so that the working fluid can be quickly discharged from the outlet end 2 by the respective outlet ends 2.

於-較佳實施例中’前述多孔隙接觸層5可為網狀結構，'然而亦可採 =具有複數個管狀錄狀結構所組成之多孔畴f ^如此—來，半導體晶 =A所鼓的熱可經由其背面傳敍乡絲觸層$，並與纽隙接觸層$ ，工作流體進行熱交換。於—較佳實施例中，前述多孔隙接觸層5之密 =小於多孔贿交換層4，藉此可加紅作流體在纽隙接觸層5内之流 L度，並迅速地將熱量由出口端2排出。 針對不同的積體電路製程，尤其是對於淺溝槽分離(shaU〇wIn the preferred embodiment, the foregoing porous contact layer 5 may be a network structure, but it may also be a porous domain having a plurality of tubular recording structures. Thus, the semiconductor crystal=A drum The heat can be passed through the back of the line to the home touch layer $, and with the new gap contact layer $, the working fluid is heat exchanged. In the preferred embodiment, the density of the porous contact layer 5 is less than that of the porous brittle exchange layer 4, whereby redness can be added as the flow L of the fluid in the gap contact layer 5, and the heat is quickly removed from the outlet. End 2 is discharged. For different integrated circuit processes, especially for shallow trench separation (shaU〇w

Trench -_η，STI)以及採用電聚或非電漿形式之多晶矽㈣础㈣)製程而^ =物麵轉(PVD)、化學氣相沉積(cvd)等等，藉由本發明之冷卻系 提升在—維平社之溫度均勻性’啊可有效地抑制半導體晶圓在 衣牙壬§中所產生的溫度變化。 供综上所述’本發明不僅構造簡單且成本低廉，可節省人力以及硬體設 備的支出，此外亦可改善製㈣穩定性進而提昇產品的良率。 〆羽;、、沐么$已以較佳貫施例揭露如上’然其並非用以限定本發明，任 何熟習此徽藝者，在不麟本發明之精神和範Μ，仍可作些許的更動 ” □此本ϋ之保護範圍當視後社巾請專利範圍所界定者為準。Trench -_η, STI) and polycrystalline silicon (IV) based on electropolymerization or non-plasma (4)) process = surface plane rotation (PVD), chemical vapor deposition (cvd), etc., by the cooling system of the present invention - The temperature uniformity of the company can effectively suppress the temperature changes generated by the semiconductor wafer in the gingival §. In summary, the present invention not only has a simple structure and low cost, but also saves manpower and hardware equipment expenditure, and can also improve the stability of the system (4) and thereby improve the yield of the product. 〆羽;,,沐, $ has been disclosed as a better example. However, it is not intended to limit the invention. Anyone who is familiar with this art can still make some changes in the spirit and scope of the invention. □ The scope of protection of this 当 is subject to the definition of patent scope.

0503-A30939TWF 9 1264050 【圖式簡單說明】 第1圖係表示習知靜電承載座之示意圖； 第2圖係表示本發明之冷卻系統示意圖； 第3a圖係表示第2圖中多孔隙流動層之上視圖； 第3b圖係表示第2圖中多孔隙熱交換層之上視圖； 第3c圖係表示第2圖中多孔隙接觸層之上視圖；以及 第3d圖係表示第3c圖中P區域之放大圖。 【主要元件符號說明】 2〜出口端； 4〜多孔隙熱交換層； 6〜開孔； 8〜空隙； 10〜冷卻系統； B〜支撐體； B2〜通道； C’〜冷卻裝置 E〜靜電吸附體； Μ〜本體。 1〜入口端； 3〜多孔隙流動層； 5〜多孔隙接觸層； 7〜孔隙； 9〜柱狀體； A〜晶圓， B1〜突出部； C〜靜電承載座； D〜蓋板； E1〜金屬電極； 0503-A30939TWF 100503-A30939TWF 9 1264050 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a conventional electrostatic carrier; Fig. 2 is a schematic view showing a cooling system of the present invention; and Fig. 3a is a view showing a porous flow layer in Fig. 2; Figure 3b shows the top view of the porous heat exchange layer in Figure 2; Figure 3c shows the top view of the porous contact layer in Figure 2; and Figure 3d shows the P area in Figure 3c Magnified view. [Main component symbol description] 2~ outlet end; 4~ porous heat exchange layer; 6~ opening; 8~ void; 10~ cooling system; B~ support; B2~ channel; C'~ cooling device E~ static Adsorbed body; Μ ~ body. 1 to the inlet end; 3 to the porous flow layer; 5 to the porous contact layer; 7 to the pores; 9 to the columnar body; A to the wafer, B1 to the protrusion; C to the electrostatic carrier; E1~metal electrode; 0503-A30939TWF 10

Claims (1)

1264050 十、申請專利範圍： 1·一種冷卻裝置，一工作流體流經該冷卻裝置内部，用以控制一半導體 晶圓之溫度，其中該半導體晶圓係固定於一靜電承載座，該冷卻裝置包括： 一多孔隙流動層； 一多孔隙接觸層，連接該靜電承載座； 一多孔隙熱交換層，設置於該多孔隙流動層與該多孔隙接觸層之間； 一入口端，連接該多孔隙流動層；以及 出口 ί% ’連接該多孔隙接觸層，其中該工作流體自該入口端依序流 經該多孔隙流動層、該多孔隙熱交換層以及該多孔隙接觸層，並經由該出 口端流出該多孔隙接觸層，藉以與該半導體晶圓進行熱交換。 2·如申請專利範圍第1項所述之冷卻裝置，其中該多孔隙流動層具有複 數個開孔，分別連接該入口端，該工作流體係由該入口端經過該等開^^流 入該多孔隙流動層。 3·如申請專利範圍第1項所述之冷卻裝置，其中該等開孔設置於該冷卻 裝置之底部。 4·如申請專利範圍帛1項所述之冷卻|置，其中該多孔隙接觸層具有一 環狀空間，環繞該多孔隙接觸層外圍並連接該出口端。 5·如申請專利範圍第1項所述之冷卻裝置，其中該多孔隙接觸層之密度 小於該多孔隙熱交換層之密度。 6·如申請專利範圍第1項所述之冷卻裝置，其中該多孔隙流動層具有複 數個管狀結構。 7_如申請專利範圍第1項所述之冷卻裳置，其中該多孔隙流動層具有複 數個柱狀結構。 8·如申請專利範IS第1賴述之冷魏置，其巾該多孔隙流動層具有一 網狀結構。 9.如申請專利範圍第1項所述之冷卻裳置，其中該多孔隙熱交換層具有 0503-A30939TWF 11 1264050 複數個管狀結構。 其中該多孔隙熱交換層具 其中該多孔隙熱交換層具 10.如申請專利範圍第1項所述之冷卻裝置 有複數個柱狀結構。 11·如申請專利範圍第1項所述之冷卻裝置 有一網狀結構。 12.如申請專纖圍第丨賴述之冷卻裝置，其中該纽_交換層且 有銀。 ....... η.如申請專利範圍第丨項所述之冷卻裝置，其中該多孔_交換層具 有銅。 曰 Κ如申請專利範圍第丨項所述之冷卻裝置，其中該多孔隙接觸層具有 複數個管狀結構。 15_如申請專利範圍第丨賴述之冷卻裝置，其巾該纽隙接觸層具有 複數個柱狀結構。 16·如申請專利範圍第丨項所述之冷卻裝置，其中該多孔隙接觸層具有 一網狀結構。 曰” 17·—種冷卻系統，一工作流體流經該冷卻裝置内部，用以控制一半導 體晶圓之溫度，其中該半導體晶圓係固定於一靜電承載座，該冷卻裝置包 括： 一多孔隙流動層； 一多孔隙接觸層，連接該靜電承載座； 一多孔隙熱交換層，設置於該多孔隙流動層與該多孔隙接觸層之間； 一入口端，連接該多孔隙流動層； 一出口端，連接該多孔隙接觸層，其中該工作流體自該入口端依序流 經該多孔隙流動層、該多孔隙熱交換層以及該多孔隙接觸層，並經由該出 口端流出該多孔隙接觸層，藉以與該半導體晶圓進行熱交換；以及 一循環裝置，連接該入口端以及該出口端，用以驅動該工作流體循環 0503-A30939TWP 12 1264050 地於該冷卻系統内流動，並使得該工作流體於該冷卻系統内形成一迴路。 18.如申請專利範圍第17項所述之冷卻系統，其中該循環裝置具有一幫 浦，驅動該工作流體循環地於該冷卻系統内流動。1264050 X. Patent Application Range: 1. A cooling device through which a working fluid flows to control the temperature of a semiconductor wafer, wherein the semiconductor wafer is fixed to an electrostatic carrier, the cooling device includes a multi-porous flow layer; a porous contact layer connecting the electrostatic carrier; a porous heat exchange layer disposed between the porous flow layer and the porous contact layer; an inlet end connecting the porous a flow layer; and an outlet '% 'connecting the porous contact layer, wherein the working fluid flows sequentially from the inlet end through the porous flow layer, the porous heat exchange layer, and the porous contact layer, and through the outlet The end of the porous contact layer flows out to exchange heat with the semiconductor wafer. 2. The cooling device of claim 1, wherein the porous flow layer has a plurality of openings connected to the inlet end, and the working flow system flows from the inlet end through the opening Pore flow layer. 3. The cooling device of claim 1, wherein the openings are disposed at a bottom of the cooling device. 4. The cooling device of claim 1, wherein the porous contact layer has an annular space surrounding the periphery of the porous contact layer and connecting the outlet end. 5. The cooling device of claim 1, wherein the density of the porous contact layer is less than the density of the porous heat exchange layer. 6. The cooling device of claim 1, wherein the porous flow layer has a plurality of tubular structures. 7_ The cooling skirt according to claim 1, wherein the porous flow layer has a plurality of columnar structures. 8. In the case of applying the patent, the first embodiment of the invention, the porous flow layer has a network structure. 9. The cooling skirt of claim 1, wherein the porous heat exchange layer has a plurality of tubular structures of 0503-A30939TWF 11 1264050. Wherein the porous heat exchange layer has the porous heat exchange layer. 10. The cooling device according to claim 1 has a plurality of columnar structures. 11. The cooling device according to item 1 of the patent application has a mesh structure. 12. If you apply for the cooling device of the special fiber 丨 丨 丨 丨 , , , , , , , , , , , , , , The cooling device according to claim 2, wherein the porous exchange layer has copper. The cooling device of claim 2, wherein the porous contact layer has a plurality of tubular structures. 15_ As for the cooling device of the patent application, the contact layer of the gap has a plurality of columnar structures. The cooling device of claim 2, wherein the porous contact layer has a network structure. a cooling system in which a working fluid flows through the interior of the cooling device for controlling the temperature of a semiconductor wafer, wherein the semiconductor wafer is fixed to an electrostatic carrier, the cooling device comprising: a porous a flow layer; a porous contact layer connecting the electrostatic carrier; a porous heat exchange layer disposed between the porous flow layer and the porous contact layer; an inlet end connecting the porous flow layer; An outlet end connecting the porous contact layer, wherein the working fluid flows sequentially from the inlet end through the porous flow layer, the porous heat exchange layer and the porous contact layer, and flows out of the porous layer through the outlet end a contact layer for exchanging heat with the semiconductor wafer; and a circulation device connecting the inlet end and the outlet end for driving the working fluid circulation 0503-A30939TWP 12 1264050 to flow in the cooling system, and causing the The working fluid forms a circuit in the cooling system. 18. The cooling system according to claim 17, wherein the circulating device has A pump for driving the working fluid circulation flow within the cooling system. 0503-A30939TWF 130503-A30939TWF 13
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