CN100421018C - Structure of TFT LCD array base plate and manufacturing method of the same - Google Patents
Structure of TFT LCD array base plate and manufacturing method of the same Download PDFInfo
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- CN100421018C CN100421018C CNB2006101452177A CN200610145217A CN100421018C CN 100421018 C CN100421018 C CN 100421018C CN B2006101452177 A CNB2006101452177 A CN B2006101452177A CN 200610145217 A CN200610145217 A CN 200610145217A CN 100421018 C CN100421018 C CN 100421018C
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Abstract
This invention discloses one TFT LCD array base board structure, which comprises glass base board to form film transistor array on glass baseboard; one coating layer forming between glass base board and film transistor array with film layer as polyimide film. This invention also discloses one process method, which comprises the following steps: firstly providing one glass baseboard; then sticking polyimide film on glass baseboard; finally processing film transducer array on the polyimide film surface.
Description
Technical field
The present invention relates to structure and the manufacture method thereof of a kind of Thin Film Transistor-LCD (TFT LCD), relate in particular to a kind of structure and manufacture method thereof of TFT LCD array base palte.
Background technology
LCD (LCD) technology has had development by leaps and bounds in nearly ten years, all obtained very much progress from the size of screen to the quality that shows.Through continuous effort, the performance of LCD each side has reached the level of traditional C RT, and the trend that replaces CRT is arranged greatly.
Along with the continuous expansion that LCD produces, the competition between each production firm also is growing more intense.Each producer is when improving constantly properties of product, and also or else disconnected effort reduces production cost of products, thereby improves the competitive power in market.Show that at LCD glass substrate occupies very big ratio in the cost of product.In the method that reduces finished product, improve raw-material utilization factor, the utilization factor that particularly improves glass substrate is one of direction of each manufacturer's widespread effort at present.
Make in the technology of TFT LCD array base palte in the prior art; directly on glass substrate by method deposit film materials such as sputter, PECVD, MBE; on film, coat photoresist then; method by mask exposure forms needed figure on photoresist; the material area that to do not protected by photoresist by etching etches away again, peels off photoresist at last.Required TFT circuit version is finally made in the circulation of " deposition-photoetching-etching " operation through several times.Its concrete structure as shown in Figure 1.As shown in Figure 1, be positioned at and be followed successively by gate electrode 7, gate insulation layer 8, a-Si layer 9 on the glass substrate 1.A-Si is last to be source electrode and drain electrode 11.The source-drain electrode top is followed successively by passivation layer 12, transparent pixels electrode 13.Be N+a-Si layer 10 between a-Si layer 9 and source electrode and the drain electrode 11, it mainly act as the conductivity that contacts that metal electrode and a-Si layer are leaked in the raising source.Passivation layer 12 comprises all parts of source-drain electrode 11, gate electrode 7, act as protection TFT device.Putting connecting hole respectively at source-drain electrode 11, gate electrode on 7 positions on the passivation layer 12.Connecting hole is driveed to source leakage metal.Transparent conductive material, as ITO etc., the preparation connecting line forms transparent pixels electrode 13 by connecting hole in source electrode 11 parts.
In in recent years, by the unremitting effort of engineers, the technology of preparation display element has been tending towards ripe on organic substrate.But, never in the production of TFT LCD panel, use on a large scale because the transmittance of organic substrate is lower.Glass substrate relies on its excellent transmittance and chemical stability, is the main matrix of TFT LCD panel always.Because the glass substrate price is higher, and the yield that TFT LCD panel industry is produced is limited, makes substandard product can only smash processing.Because underproof just thin film transistor (TFT) (TFT) circuit part for its substrate glass substrate, is put into output without any variation from starting material in the substandard product.Substandard product is smashed for the glass substrate that accounts for TFT LCD panel cost significant proportion, be undoubtedly a kind of waste.
Summary of the invention
The present invention is directed to the defective of prior art, a kind of structure and manufacture method of TFT LCD array base palte is provided, it improves the method for glass substrate utilization factor by the pad pasting mode, thereby reduces the cost of manufacture of TFT LCD panel.
To achieve these goals, the invention provides a kind of structure of TFT LCD array base palte, comprising: glass substrate is formed on the thin film transistor (TFT) array part on the glass substrate, wherein a Kapton is formed between glass substrate and the thin film transistor (TFT) array part.
In the such scheme, described Kapton relies on atmospheric pressure or cementing agent and glass substrate evenly to combine.Described Kapton has resistance to elevated temperatures and certain decay resistance.
To achieve these goals, the present invention provides a kind of manufacture method of structure of TFT LCD array base palte simultaneously, comprising:
Step 1 provides a glass substrate
In the such scheme, the Kapton that pastes in the described step 2 is to adopt special-purpose pad pasting machinery to stick.The Kapton step that pastes in the perhaps described step 2 is: at first, adopt the method for spraying or spraying to form water membrane at glass baseplate surface; Then, Kapton is placed on the glass substrate that is attached with moisture film, treat the correct location of Kapton after, remove the bubble and the moisture content of Kapton inside with scraper plate.
In the manufacturing process of prior art array base palte, can only smash aftertreatment to the defective array base palte that occurs after the substrate detection compares, the present invention has adopted and evenly pasted one deck Kapton on glass substrate, on Kapton, adopt the array base palte manufacturing process of typical TFT LCD to prepare circuit then, as detect the back and find substandard product, film is together taken off the method that glass substrate is recycled and reused together with the circuit part on it.The present invention can reclaim use again with the glass substrate of defective array base palte, has reduced the manufacturing cost of TFT LCD panel, has prevented the broken dust that produces of glass, has reduced discharging wastes, has protected environment.
Below in conjunction with description of drawings and specific embodiment the present invention is further elaborated.
Description of drawings
Fig. 1 is the sectional view of TFT LCD array base-plate structure in the prior art;
Fig. 2 is the sectional view of finishing behind the invention glass substrate pad pasting after the structural manufacturing process of TFT LCD array base palte;
Fig. 3 occurs in the manufacture process behind the glass substrate pad pasting of the present invention taking off the membrane process synoptic diagram after bad;
Fig. 4 is the present invention's film coating process synoptic diagram on glass substrate;
Fig. 5 is the sectional view behind the pad pasting on the glass substrate of the present invention;
Fig. 6 is the sectional view that deposits for the first time behind the glass substrate pad pasting of the present invention behind the grid metal level;
Fig. 7 is the sectional view that carries out for the first time behind the glass substrate pad pasting of the present invention after the photoetching process;
Fig. 8 is the sectional view that carries out for the first time behind the glass substrate pad pasting of the present invention behind the etching technics;
Fig. 9 is the method formation water membrane synoptic diagram that the present invention adopts spraying or sprays at glass baseplate surface;
Figure 10 is that the present invention is placed on synoptic diagram on the glass substrate that is attached with moisture film with the Kapton that size is slightly larger than glass substrate;
Figure 11 is that the present invention moulds inner bubble and the moisture content synoptic diagram of material scraper plate removing with rake.
Mark among the figure: 1, glass substrate; 2, Kapton, 3, pad pasting roller; 4, glass substrate transfer roller; 5, grid metal level; 6, grid part photoresist; 7, gate electrode; 8, gate insulation layer; 9, a-Si layer; 10, N+a-Si layer; 11, source-drain electrode; 12, passivation layer; 13, transparent pixels electrode; 14, moisture film; 15, scraper plate.
Embodiment
Figure 2 shows that the sectional view of the structure of TFT LCD array base palte of the present invention.As shown in Figure 2, this structure comprises, glass substrate 1 is formed on the array structure on the glass substrate 1, and wherein array structure comprises, gate electrode 7, gate insulation layer 8, a-Si layer 9.A-Si is last to be source electrode and drain electrode 11.The source-drain electrode top is followed successively by source source/drain insulation layer 12, transparent pixels electrode 13.Be N+a-Si layer 10 between a-Si layer 9 and source electrode and the drain electrode 11, it mainly act as the conductivity that contacts that metal electrode and a-Si layer are leaked in the raising source.Passivation layer 12 comprises all parts of source-drain electrode 11, gate electrode 7, act as protection TFT device.Putting connecting hole respectively at source-drain electrode 11, gate electrode on 7 positions on the passivation layer 12.Connecting hole is driveed to source leakage metal.Transparent conductive material, as ITO etc., the preparation connecting line forms transparent pixels electrode 13 by connecting hole in source electrode 11 parts.Above-mentioned part does not have difference with of the prior art, and the present invention is different from the prior art part and is, Kapton 2 is arranged between glass substrate 1 and thin film transistor (TFT) array.Thin 2 thickness of the polyimide film that is pasted are about 50 μ m, and are little to the transmitance influence of TFT LCD panel, overcome the problem that the array base palte that directly prepares TFTLCD on organic substrate sees through rate variance.In addition, because the present invention has polyimide film thin 2 between glass substrate 1 and thin film transistor (TFT) array, so when detecting by array base palte, when discovery has substandard product, polyimide rete 2 can be taken off together with the thin film transistor (TFT) array that adheres on it, as shown in Figure 3, glass substrate be reclaimed, again come into operation, thereby reduced the manufacturing cost of TFT LCD panel.The structure of the thin film transistor (TFT) array on the polyimide film that provides among Fig. 2 thin 2 only is a concrete implementation column, and the structurally variable of this thin film transistor (TFT) array changes into any form of the prior art.
The manufacture method of array base palte of the present invention is described in detail in detail below in conjunction with specific embodiment.
Embodiment one:
At first, adopt special-purpose pad pasting machinery, rely on pad pasting roller 3 and atmospheric pressure on it that Kapton 2 entirely is attached to glass substrate 1 (glass substrate 1 is placed on the glass substrate transfer roller 4), its method that pastes as shown in Figure 4.Paste the sectional tool body structure that reunites behind the imide membrane as shown in Figure 5.Some Kapton product simultaneously scribbles cementing agent, helps to bond together with glass substrate better.
Then, use methods such as sputter, PECVD, MBE or printing, preparation grid metal level 5 on Kapton 2, its sectional tool body structure is as shown in Figure 6.Coat photoresist again on film, the method by mask exposure forms needed figure on photoresist, and wherein grid part photoresist 6 keeps, and its sectional tool body structure as shown in Figure 7.The material area that to do not protected by photoresist by etching etches away again, peels off photoresist at last, obtains gate electrode 7, and its sectional tool body structure as shown in Figure 8.
Through the circulation of 3 to 5 " deposition-photoetching-etching " operations, finally make required tft array substrate structure.Its TFT position partial cross section figure as shown in Figure 2.
The array base palte that is up to the standards is carried out the preparation technology of typical TFT LCD again, as can finish the preparation of TFT LCD display module to operations such as box, liquid crystal injections.
Array base palte process detection as TFT LCD, the discovery product is defective, in the time of need scrapping, needn't use the method for substrate being broken into pieces the back recovery that adopts as present, only need the Kapton on the glass substrate is together taken off together with the part of the tft array on it, then the glass substrate recovery is got final product.Its specific implementation method as shown in Figure 3.
Embodiment two:
At first, adopt the method for spraying or spraying to form water membrane 14, as shown in Figure 9 at glass baseplate surface.The effect of this moisture film 14 is: improve the flowability of Kapton, drive away the bubble that is detained on the positions such as cut, sand holes, pit and fabric depression, thereby improve the flatness and the homogeneity of pad pasting.
Then, the Kapton that size is slightly larger than glass substrate is placed on the glass substrate that is attached with moisture film, as shown in figure 10.Behind the correct location of film, hold straight rake level with both hands with glue and mould material scraper plate 15 and dial to both sides by the centre and scrape, remove inner bubble and moisture content, as shown in figure 11.Running into the part has the place of not fitting, and with the hair drier heating, film and glass is fitted fully.After checking between Kapton and the glass substrate no any bubble or wrinkle, according to embodiment 1 in method or additive method of the prior art on film, prepare required TFT circuit, finally make the array base palte of required TFT LCD.
The array base palte that is up to the standards is carried out the preparation technology of typical TFT LCD again, as can finish the preparation of TFT LCD display module to operations such as box, liquid crystal injections.
Array base palte process detection as TFT LCD, the discovery product is defective, in the time of need scrapping, needn't use the method for substrate being broken into pieces the back recovery that adopts as present, only need the Kapton on the glass substrate is together taken off together with the part of the tft array on it, then the glass substrate recovery is got final product.
In the TFT LCD technology, the maximum temperature of processing is 350 ℃, appears in plasma reinforced chemical vapour deposition method (PECVD) process at present.In the magnetron sputtering technique of deposition ground floor grid material, processing temperature is 120 ℃.Kapton is a kind of novel high temperature resistant organic polymer thin film, be by pyromellitic acid anhydride (PMDA) and diaminodiphenyl ether (ODA) in extremely strong property solvent dimethyl acetamide (DMAC) through polycondensation and hydrostomia film forming, forming through imidization again. it is the present best film class insulating material of performance in the world, has excellent mechanical property, electrical property, chemical stability and very high radiation resistance, high temperature resistant and resistance to low temperature (269 ℃ to+400 ℃).Use Kapton can satisfy the requirement of use as the rete that pastes.
In the manufacturing process of prior art array base palte, substrate is detected the defective array base palte that the back occurs to smash aftertreatment.The glass substrate of defective array base palte can be reclaimed use again after adopting the present invention, this prevents the broken dust that produces of glass for the manufacturing cost that reduces TFT LCD panel, reduces discharging wastes, and the protection environment all has wholesome effect.
In addition, core of the present invention is to attach the film that can tear it down on the glass substrate, and then makes the array structure part in the above, as for the concrete form of array structure, can be transformed to of the prior art any; In addition, although the film that the present invention provides is specially Kapton, also can be other film that satisfies performance requirement and substitute.
It should be noted that at last, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art should can use different materials and equipment to realize it as required, promptly can make amendment or be equal to replacement, and not break away from the spirit and scope of technical solution of the present invention technical scheme of the present invention.
Claims (6)
1. the structure of a TFT LCD array base palte comprises: glass substrate, be formed on the thin film transistor (TFT) array part on the glass substrate, and it is characterized in that: a Kapton is formed between glass substrate and the thin film transistor (TFT) array part.
2. the structure of array base palte according to claim 1 is characterized in that: described Kapton relies on atmospheric pressure or cementing agent and glass substrate evenly to combine.
3. the structure of array base palte according to claim 1 and 2, it is characterized in that: described Kapton is the Kapton with resistance to elevated temperatures and decay resistance.
4. the manufacture method of the structure of a TFT LCD array base palte is characterized in that, comprising:
Step 1 provides a glass substrate
Step 2 pastes Kapton on glass substrate;
Step 3 is in the Kapton surface preparation thin film transistor (TFT) array part of completing steps 2.
5. manufacture method according to claim 4 is characterized in that: the Kapton that pastes in the described step 2 adopts pad pasting machinery to stick.
6. manufacture method according to claim 4 is characterized in that: the Kapton step that pastes in the described step 2 comprises:
At first, adopt the method for spraying or spraying to form water membrane at glass baseplate surface;
Then, Kapton is placed on the glass substrate that is attached with moisture film, treat the correct location of Kapton after, remove the bubble and the moisture content of Kapton inside with scraper plate.
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| Application Number | Priority Date | Filing Date | Title |
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| CNB2006101452177A CN100421018C (en) | 2006-11-17 | 2006-11-17 | Structure of TFT LCD array base plate and manufacturing method of the same |
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| CNB2006101452177A CN100421018C (en) | 2006-11-17 | 2006-11-17 | Structure of TFT LCD array base plate and manufacturing method of the same |
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| CN100421018C true CN100421018C (en) | 2008-09-24 |
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Families Citing this family (12)
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| CN102207640B (en) * | 2010-03-30 | 2014-05-28 | 比亚迪股份有限公司 | Method for recycling TFT (Thin Film Transistor) liquid crystal display with liquid crystal bubbles |
| CN102496562B (en) * | 2011-11-30 | 2014-01-01 | 中国科学院半导体研究所 | Method of adhering flexible thin-film material to glass substrate |
| US11497681B2 (en) | 2012-02-28 | 2022-11-15 | Corning Incorporated | Glass articles with low-friction coatings |
| US10737973B2 (en) | 2012-02-28 | 2020-08-11 | Corning Incorporated | Pharmaceutical glass coating for achieving particle reduction |
| CN107540242B (en) | 2012-02-28 | 2020-11-20 | 康宁股份有限公司 | Glass article with low friction coating |
| US10273048B2 (en) | 2012-06-07 | 2019-04-30 | Corning Incorporated | Delamination resistant glass containers with heat-tolerant coatings |
| US9034442B2 (en) | 2012-11-30 | 2015-05-19 | Corning Incorporated | Strengthened borosilicate glass containers with improved damage tolerance |
| US10117806B2 (en) | 2012-11-30 | 2018-11-06 | Corning Incorporated | Strengthened glass containers resistant to delamination and damage |
| MX2017002898A (en) | 2014-09-05 | 2017-10-11 | Corning Inc | Glass articles and methods for improving the reliability of glass articles. |
| US10065884B2 (en) | 2014-11-26 | 2018-09-04 | Corning Incorporated | Methods for producing strengthened and durable glass containers |
| EP3150564B1 (en) | 2015-09-30 | 2018-12-05 | Corning Incorporated | Halogenated polyimide siloxane chemical compositions and glass articles with halogenated polylmide siloxane low-friction coatings |
| MX2018005349A (en) | 2015-10-30 | 2018-05-17 | Corning Inc | Glass articles with mixed polymer and metal oxide coatings. |
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Effective date of registration: 20201123 Address after: 215200 No. 1700, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu, Zhongshan North Road Patentee after: Gaochuang (Suzhou) Electronics Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100176 No. 8 West Central Road, Beijing economic and Technological Development Zone Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. |