CN100420033C - Field effect transistor - Google Patents
Field effect transistor Download PDFInfo
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- CN100420033C CN100420033C CNB2004100520341A CN200410052034A CN100420033C CN 100420033 C CN100420033 C CN 100420033C CN B2004100520341 A CNB2004100520341 A CN B2004100520341A CN 200410052034 A CN200410052034 A CN 200410052034A CN 100420033 C CN100420033 C CN 100420033C
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- effect transistor
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Abstract
The present invention relates to a field effect transistor which comprises a first conductive type semiconductor layer, a second conductive type source electrode area, a second conductive type drain electrode area, an insulating oxidizing layer, a source electrode, a drain electrode and a grid electrode, wherein the second conductive type source electrode area and the second conductive type drain electrode area are respectively formed on the semiconductor layer, and a certain distance is kept between the source electrode area and the drain electrode area; the insulating oxidizing layer is formed on the semiconductor layer and positioned between the source electrode area and the drain electrode area; the source electrode, the drain electrode and the grid electrode are respectively formed in the source electrode area, the drain electrode area and the insulating oxidizing layer; the semiconductor layer is a carbon nanotube layer with semiconductivity.
Description
[technical field]
The present invention relates to a kind of field-effect transistor, relate in particular to a kind of field-effect transistor and manufacture method thereof based on carbon nano-tube.
[background technology]
Since first IC (Integrated Circuit) is born, based on the research and development of the microprocessor products of silicon device and be manufactured under the Moore's Law very fast development of speed of doubling with per 18 months transistorized quantity.By 2002, microprocessor contained 7,600 ten thousand transistors, can realize very strong functions.Yet scientific circles generally believe that Moore's Law can be ineffective forever, and 50 nanometers are limit of modern semiconductors technology, and the most up-to-date techniques of Intel are 0.13 micron, and promptly the silicon limit will arrive in 10～15 years.
The basis of silicon device is the crystal that silicon atom is formed.The discontinuous energy level of silicon atom has constituted energy band in the crystal, and the electronics in the semiconductor moves in energy band.The energy that can be with is far longer than the energy of silicon atom energy level, and it can make electronics overflow from the particular level of atom.If transistor size is very little on the silicon chip, can be with the electronics that causes to overflow and will produce seriously electric leakage between the adjacent transistor, cause electronic switch " to turn-off ".In addition, transistor size is too small also can cause great difficulty to heat radiation.The difficult problem of these physical properties will make the cost that improves the silicon device integrated level more and more higher.
Since 1991, Ijima finds that carbon nano-tube is (specifically referring to Nature, 1991,354,56) since, 1998, IBM cooperates with NEC successfully to make field-effect transistor (specifically referring to Applied Physics Letters, 1998,73 with the carbon nano-tube of a semiconductive, 2447), thus drawn back the prelude that replaces silicon device with the carbon device.Should reveal electric property well based on the transistor body of a carbon nano-tube, when grid voltage changed, the electricity between source drain was led and is changed to 100,000 times.Because the size of carbon nano-tube is very little, it is predicted that if make device with carbon nano-tube, the comparable current state-of-the-art 0.13 micron silicon device of its transistorized density is high 60,000 times.
Yet above-mentioned field-effect transistor with the single-root carbon nano-tube preparation need adopt special preparation technology, as using atomic force microscope (AFM, Atom Force Microscope) processes, preparation cost is very high, only is suitable for the experimental stage, is not suitable for large-scale production.
Therefore, provide that a kind of preparation method is simple, cost is low, the field-effect transistor of good in thermal property is very necessary.
[summary of the invention]
Be to solve the technical problem of prior art, the purpose of this invention is to provide that a kind of preparation method is simple, cost is low, the field-effect transistor of good in thermal property.
Another object of the present invention provides the preparation method of this kind field-effect transistor.
For realizing purpose of the present invention, the invention provides a kind of field-effect transistor, it comprises the semiconductor layer of one first conduction type; The drain region of the source region of one second conduction type and one second conduction type is formed at above-mentioned semiconductor layer respectively, and this source region and this drain region are at a distance of certain distance; One insulating oxide is formed at above-mentioned semiconductor layer, and between above-mentioned source region and drain region; One source pole electrode, a drain electrode and a gate electrode are formed at above-mentioned source region, drain region and insulating oxide respectively, and wherein, this semiconductor layer is the carbon nanotube layer of semiconductor.
The diameter of carbon nano-tube is 2～10 nanometers in the carbon nanotube layer of the present invention, highly is 20～500 nanometers, and the material of insulating oxide is a silicon dioxide.
For realizing another object of the present invention, the present invention also provides a kind of method for preparing this kind field-effect transistor, may further comprise the steps:
The semiconductive carbon nano tube layer substrate of one first conduction type is provided;
Form the source region and the drain region of second conduction type at above-mentioned carbon nanotube layer substrate, this source region and drain region are at a distance of certain distance;
Forming an insulating oxide on the carbon nanotube substrate, between source region and the drain region;
Metal electrode is set respectively on above-mentioned source region, drain region and insulating oxide.
Compared with prior art, field-effect transistor of the present invention has following advantage: one, and directly adopt carbon nanotube layer to substitute the silicon substrate of conventional field effect transistor, can combine with the traditional silicon technology, be fit to large-scale production and application; Its two, carbon nano-tube itself has high conductive coefficient, reaches 400～1000Watt/mK, thereby the heat that can effectively transistor work be produced dissipates fast, improves existing heat dissipation problem thereby solve when integrated level; They are three years old, owing to adopt carbon nano-tube as substrate, the processing of its nanoscale can be so that the technology of 0.13 micron of silicon device becomes littler at present, below 60 nanometers, so it is littler that the size of each transistor can become, and, can realize moving and finish transistorized switching function, thereby can reduce the generation of system thermal with still less electronics because carbon atom itself is more stable than silicon atom.
[description of drawings]
Fig. 1 is the schematic diagram of field-effect transistor of the present invention.
Fig. 2 is the preparation method's of a field-effect transistor of the present invention schematic diagram.
[embodiment]
The present invention is described in detail below in conjunction with the accompanying drawings and the specific embodiments.
See also Fig. 1, the invention provides a kind of field-effect transistor 11, it comprises a P type carbon nanotube layer 12 substrates; One N type doped region is formed at above-mentioned P type carbon nanotube layer 12 as a source region 13 and a N type doped region respectively as drain region 14, and this source region 13 and drain region 14 are at a distance of certain distance; One insulating oxide 15 is formed on the above-mentioned P type carbon nanotube layer 12, and between above-mentioned source region 13 and drain region 14; One source pole electrode 131, a drain electrode 141 and a gate electrode 151 are formed at respectively on above-mentioned source region 13, drain region 14 and the insulating oxide 15.Wherein, the insulating oxide 15 of present embodiment is a silicon dioxide layer, and metal electrode is selected from aluminium, gold or copper electrode.
The present invention further provides a kind of preparation method of field-effect transistor 11, it may further comprise the steps:
Step 10 provides a P type carbon nanotube layer substrate;
Step 20 is to mix by ion injection method at a distance of certain distance at above-mentioned P type carbon nanotube layer substrate, forms the source region and the drain region of N type, and wherein present embodiment adopts phosphonium ion to mix;
Step 30 is to form an insulating oxide on the carbon nanotube layer substrate, between source region and the drain region;
Step 40 is metal electrode to be set respectively on above-mentioned source region, drain region and insulating oxide, forms source electrode, drain electrode and the gate electrode of field-effect transistor respectively.
The formation method of carbon nanotube layer substrate of the present invention may further comprise the steps:
One substrate is provided, and base material can be selected from carbon, glass or silicon;
Deposition one catalyst layer in substrate, the thickness of catalyst layer is 5～30 nanometers, the method for catalyst layer deposition can be selected the vacuum thermal evaporation volatility process for use, also optional deposited by electron beam evaporation method.The material of catalyst can be selected iron, cobalt, nickel, platinum, palladium or its alloy for use, and present embodiment selects for use iron as catalyst material, and the thickness of its deposition is 10 nanometers;
The substrate that will have catalyst layer places air, and annealing is so that the catalyst layer oxidation, shrink and to become nano level catalyst granules.Treat that annealing finishes; the substrate that will be distributed with catalyst granules again places (figure does not show) in the reative cell; feed carbon source gas acetylene and protective gas argon gas; utilize the low temperature thermal chemical vapor deposition method; carbon nano-tube on above-mentioned catalyst granules; form carbon nano-tube film, carbon source gas also can be selected the gas of other carbon containing for use, as ethene, benzene, carbon monoxide etc.Wherein, during as carbon source gas, its protective gas should be selected hydrogen for use with benzene, and during as carbon source gas, its catalyst should be selected iron pentacarbonyl Fe (CO) for use with carbon monoxide
5The diameter of the carbon nano-tube that the present invention generates is 2～10 nanometers, highly is 20～500 nanometers, and the growth temperature of low temperature chemical vapor deposition method is 550～600 degrees centigrade.
The field-effect transistor 11 of present embodiment is the P-channel metal-oxide-semiconductor field-effect transistor, it will be understood by those skilled in the art that n type carbon nanotube layer substrate carried out the doping of P type can form N channel-type mos field effect transistor.Equally, the silicon substrate with semiconductor type carbon nano-tube layer replacement conventional transistor also can form junction field effect transistor, other field-effect transistor such as insulated-gate type field effect transistor.
Field-effect transistor of the present invention has following advantage: one, and directly adopt carbon nanotube layer to substitute the silicon substrate of conventional field effect transistor, can combine with the traditional silicon technology, be fit to large-scale production and application; Its two, CNT itself has high thermal conductivity factor, reaches 400～1000Watt/mK, thereby the heat that can effectively transistor work be produced dissipates fast, improves existing heat dissipation problem thereby solve when integrated level; They are three years old, owing to adopt CNT as substrate, the processing of its nanoscale can be so that the technique of 0.13 micron of silicon device becomes less at present, below 60 nanometers, so each transistorized size also becomes less, and because carbon atom itself is more stable than silicon atom, can realizes moving to finish transistorized switching function with still less electronics, thereby can reduce the generation of system thermal.
Claims (6)
1. method for preparing field-effect transistor may further comprise the steps:
One substrate is provided, and deposition one catalyst layer feeds carbon source gas in this substrate, utilizes the low temperature thermal chemical vapor deposition method to form carbon nanotube layer, with the semiconductive carbon nano tube layer substrate as one first conduction type;
Form the source region and the drain region of second conduction type at above-mentioned carbon nanotube layer substrate, this source region and drain region are at a distance of certain distance;
Forming an insulating oxide on the carbon nanotube layer substrate, between source region and the drain region;
Metal electrode is set respectively on above-mentioned source region, drain region and insulating oxide.
2. the preparation method of field-effect transistor as claimed in claim 1 is characterized in that this base material is selected from carbon, glass or silicon.
3. the preparation method of field-effect transistor as claimed in claim 1 is characterized in that this carbon source gas is selected from acetylene, ethene, benzene or carbon monoxide.
4. the preparation method of field-effect transistor as claimed in claim 1 is characterized in that this catalyst material chosen from Fe, cobalt, nickel, platinum, palladium or its alloy.
5. the preparation method of field-effect transistor as claimed in claim 1, the growth temperature that it is characterized in that this low temperature chemical vapor deposition method is 550～600 degrees centigrade.
6. the preparation method of field-effect transistor as claimed in claim 1, the formation method that it is characterized in that this source region and drain region is an ion implantation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100520341A CN100420033C (en) | 2004-10-28 | 2004-10-28 | Field effect transistor |
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| CNB2004100520341A CN100420033C (en) | 2004-10-28 | 2004-10-28 | Field effect transistor |
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| CN1767208A CN1767208A (en) | 2006-05-03 |
| CN100420033C true CN100420033C (en) | 2008-09-17 |
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| CNB2004100520341A Expired - Fee Related CN100420033C (en) | 2004-10-28 | 2004-10-28 | Field effect transistor |
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| CN102299053B (en) * | 2010-06-22 | 2014-04-02 | 中国科学院微电子研究所 | Semiconductor device and manufacturing method thereof |
| CN103969314B (en) * | 2014-05-06 | 2017-02-15 | 中国农业科学院农业信息研究所 | Multi-parameter ionic sensor and preparation method thereof, as well as multi-parameter ionic sensor chip and monitoring system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6515339B2 (en) * | 2000-07-18 | 2003-02-04 | Lg Electronics Inc. | Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
| US20030178617A1 (en) * | 2002-03-20 | 2003-09-25 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
| CN1466218A (en) * | 2002-07-05 | 2004-01-07 | 中国科学院物理研究所 | RAM made of carbon nano tube and preparation method thereof |
| CN1474458A (en) * | 2002-08-07 | 2004-02-11 | 中国科学院物理研究所 | Single-electron storage designed based on coulomb damping principle and its preparing method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6515339B2 (en) * | 2000-07-18 | 2003-02-04 | Lg Electronics Inc. | Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method |
| US20030178617A1 (en) * | 2002-03-20 | 2003-09-25 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
| CN1466218A (en) * | 2002-07-05 | 2004-01-07 | 中国科学院物理研究所 | RAM made of carbon nano tube and preparation method thereof |
| CN1474458A (en) * | 2002-08-07 | 2004-02-11 | 中国科学院物理研究所 | Single-electron storage designed based on coulomb damping principle and its preparing method |
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