CN103904132A - Method for adjusting titanium silicide/ silicon Schottky contact barrier - Google Patents
Method for adjusting titanium silicide/ silicon Schottky contact barrier Download PDFInfo
- Publication number
- CN103904132A CN103904132A CN201410093312.1A CN201410093312A CN103904132A CN 103904132 A CN103904132 A CN 103904132A CN 201410093312 A CN201410093312 A CN 201410093312A CN 103904132 A CN103904132 A CN 103904132A
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- China
- Prior art keywords
- titanium silicide
- silicon
- oxygen atom
- titanium
- thin films
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Links
- 229910021341 titanium silicide Inorganic materials 0.000 title claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000004888 barrier function Effects 0.000 title abstract description 15
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 34
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004064 recycling Methods 0.000 claims description 4
- 238000003746 solid phase reaction Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910008486 TiSix Inorganic materials 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000002929 anti-fatigue Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
The invention belongs to the field of the microelectronic technology, and particularly relates to a method for adjusting a titanium silicide/ silicon Schottky contact barrier. An appropriate quantity of oxygen atoms are led into a titanium silicide film, a titanium silicide (TiSix containing the oxygen atoms)/ silicon Schottky contact structure is formed, and effective adjustment of the Schottky contact barrier between the titanium silicide and the silicon is achieved. Compared with a process of a common titanium silicide/ silicon Schottky rectifier diode, the method for adjusting the titanium silicide/ silicon Schottky contact barrier obtains obvious contact barrier adjustment by only adding the oxygen atom leading-in process, the whole process step is simple and easy to implement, and the method has good application prospects.
Description
Technical field
The invention belongs to microelectronics technology, be specifically related to regulate titanium silicide (TiSi
x) and silicon between the method for Schottky contact barrier.
Background technology
Schottky device is not only widely used in the electronic information fields such as communication, computer, automobile, and be applied to the national defence key projects such as Aeronautics and Astronautics, because titanium has that fusing point is high, proportion is little, specific strength is high, good toughness, antifatigue, corrosion-resistant, conductive coefficient is low, high and low temperature tolerance performance is good, under rapid heat cycle condition, the features such as stress is little are to make the more satisfactory new material of high withstand voltage, low forward voltage drop and high switching speed Schottky diode, titanium silicide/silicon Schotty diode is widely studied at present.
The performance of schottky device is mainly subject to the restriction of Schottky contact barrier.The contact berrier of common titanium silicide/silicon Schotty rectifier diode is about 0.69eV, this is because interface is due to Presence of an interface state, Fermi level is pinned near the valence band of Si, causes electronic barrier larger, thereby has limited the lifting of titanium silicide/silicon Schotty rectifier diode performance.Because electronic barrier height is the key factor that determines ON state current size, larger electronic barrier has limited flowing of electronics, causes the ON state current of device little.
Current semiconductor device is constantly towards high energy direction progress at a low price, and processing step is as the key factor in restriction device production cost, is especially worth researcher's concern.Simple, being conveniently easy to get of technique consumptive material of processing step are all the important method of optimised devices technique.Due to alignment at the bottom of the conduction band of titanium oxide and N-shaped silicon, titanium oxide/N-shaped silicon shows as ohmic contact, and electronic barrier height is very low.Effectively regulate the method for contact berrier simple by introducing appropriate oxygen atom in the titanium silicide thin films in titanium silicide/silicon Schotty rectifier diode, and effect is remarkable, the contact berrier of gained titanium silicide/silicon Schotty rectifier diode is about 0.61eV, far below the contact berrier of common titanium silicide/silicon Schotty rectifier diode 0.69eV.
Summary of the invention
The object of the invention is to propose a kind of processing step and can regulate simply, again the preparation method of titanium silicide/silicon Schotty rectifier diode of diode contact berrier.
The method of Schottky contact barrier between the adjusting titanium silicide that the present invention proposes and silicon, concrete steps are, in the titanium silicide thin films in titanium silicide/silicon Schotty rectifier diode, introduce appropriate oxygen atom, realize contact berrier and regulate.
The method of Schottky contact barrier between the adjusting titanium silicide that the present invention proposes and silicon, the method for described introducing oxygen atom can have two kinds, they respectively:
(1) on silicon substrate after depositing metal titanium film, by Implantation or diffusion way, oxygen atom is incorporated in metal titanium membrane, recycling annealing process, by the solid phase reaction of metal titanium membrane and substrate silicon, in forming titanium silicide/silicon Schotty rectification contact, oxygen atom is mixed in the titanium silicide thin films of formation; Or
(2) on silicon substrate, after depositing metal titanium film, first utilize annealing process to realize the solid phase reaction of Titanium and substrate silicon, generate titanium silicide/silicon Schotty rectification contact, recycling Implantation or diffusion technology are incorporated into oxygen atom in titanium silicide thin films.
In the present invention, in the final titanium silicide thin films that contains oxygen atom generating and substrate silicon contact interface titanium silicide thin films one side 10 nano thickness, oxygen atom average body concentration is 10
15-10
24cm
-3.Preferably oxygen atom average body concentration is 10
20-10
22cm
-3.
In the present invention, thermal annealing temperature is 500 ~ 1000
oc, the time is 1 second ~ 10 minutes.Preferably thermal annealing temperature is 700 ~ 900
oc, the time is 1 ~ 2 minute.
The present invention, owing to only need to increase the introducing technique of a step oxygen atom in common titanium silicide/silicon Schotty transistor technology, just can obtain obvious contact berrier and regulate, and whole processing step is simple.
Concrete operation step of the present invention is divided into two kinds, as follows:
The first scheme operating procedure:
1, the clean surface silicon chip substrate based on passing through clean is carried out the deposit of Titanium film;
2, by Implantation or diffusion way, appropriate oxygen atom is incorporated in metal titanium membrane;
3, carry out thermal annealing, thermal annealing temperature is 500 ~ 1000
oc, the time is 1 second ~ 10 minutes, making oxygen atom average body concentration in the final titanium silicide thin films that contains oxygen atom generating and substrate silicon contact interface titanium silicide thin films one side 10 nano thickness is 10
15-10
24cm
-3.
First scheme operating procedure:
1, the clean surface silicon chip substrate based on passing through clean is carried out the deposit of Titanium film;
2, carry out thermal annealing, thermal annealing temperature is 500 ~ 1000
oc, the time is 1 second ~ 10 minutes;
3, utilize Implantation or diffusion technology that appropriate oxygen atom is incorporated in titanium silicide thin films, making oxygen atom average body concentration in the final titanium silicide thin films that contains oxygen atom generating and substrate silicon contact interface titanium silicide thin films one side 10 nano thickness is 10
15-10
24cm
-3.
The present invention, by introduce appropriate oxygen atom in titanium silicide thin films, forms titanium silicide (TiSix includes oxygen atom)/Si Schottky contacts structure, realizes the effective adjusting to Schottky contact barrier between titanium silicide and silicon.Under forward bias, the operating current of this kind of Schottky contacts circulates via the barrier region after reducing, thereby can obtain higher operating current.Its I-V Character Comparison as shown in Figure 1.
Accompanying drawing explanation
Fig. 1 is that oxygen mixes the impact on titanium silicide/silicon Schotty diode rectification characteristic.
Fig. 2-Fig. 6 is the schematic diagram (end view) of technological process.
Embodiment
Further describe the present invention below in conjunction with accompanying drawing:
The first scheme processing step:
1, the clean surface silicon substrate based on passing through clean carries out the deposit of Titanium film, as shown in Figure 2;
2, by Implantation or diffusion way, appropriate oxygen atom is incorporated in metal titanium membrane, as shown in Figure 3;
3, carry out thermal annealing, thermal annealing temperature is 500 ~ 1000
oc, the time is 1 second ~ 10 minutes, making oxygen atom average body concentration in the final titanium silicide thin films that contains oxygen atom generating and substrate silicon contact interface titanium silicide thin films one side 10 nano thickness is 10
15-10
24cm
-3, final result as shown in Figure 6.
First scheme processing step:
1, the clean surface silicon chip substrate based on passing through clean is carried out the deposit of Titanium film, as shown in Figure 1;
2, carry out thermal annealing, thermal annealing temperature is 500 ~ 1000
oc, the time is 1 second ~ 10 minutes, as shown in Figure 4;
3, utilize Implantation or diffusion technology that appropriate oxygen atom is incorporated in titanium silicide thin films, as shown in Figure 5, making oxygen atom average body concentration in the final titanium silicide thin films that contains oxygen atom generating and substrate silicon contact interface titanium silicide thin films one side 10 nano thickness is 10
15-10
24cm
-3, final result as shown in Figure 6.
Claims (4)
1. regulate a method for titanium silicide/silicon Schotty contact berrier, it is characterized in that concrete steps are: in the titanium silicide thin films in titanium silicide/silicon Schotty rectifier diode, introduce appropriate oxygen atom, realize contact berrier and regulate.
2. method according to claim 1, is characterized in that the method for described introducing oxygen atom has two kinds, they respectively:
(1) on silicon substrate after depositing metal titanium film, by Implantation or diffusion way, oxygen atom is incorporated in metal titanium membrane, recycling annealing process, make metal titanium membrane and substrate silicon generation solid phase reaction, in forming titanium silicide/silicon Schotty rectification contact, oxygen atom is mixed in the titanium silicide thin films of formation;
(2) on silicon substrate after depositing metal titanium film, first utilize annealing process to make Titanium and substrate silicon generation solid phase reaction, generate titanium silicide/silicon Schotty rectification contact, recycling Implantation or diffusion technology are incorporated into oxygen atom in titanium silicide thin films, and carry out suitable after annealing processing.
3. method according to claim 2, is characterized in that described thermal annealing temperature is 500 ~ 1000
oc, the time is 1 second ~ 10 minutes.
4. method according to claim 2, is characterized in that in the final titanium silicide thin films that contains oxygen atom generating and substrate silicon contact interface titanium silicide thin films one side 10 nano thickness, oxygen atom average body concentration is 10
15-10
24cm
-3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410093312.1A CN103904132B (en) | 2014-03-14 | 2014-03-14 | A kind of method regulating titanium silicide/silicon Schottky contact potential barrier |
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|---|---|---|---|
| CN201410093312.1A CN103904132B (en) | 2014-03-14 | 2014-03-14 | A kind of method regulating titanium silicide/silicon Schottky contact potential barrier |
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| Publication Number | Publication Date |
|---|---|
| CN103904132A true CN103904132A (en) | 2014-07-02 |
| CN103904132B CN103904132B (en) | 2017-01-04 |
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|---|---|---|---|
| CN201410093312.1A Expired - Fee Related CN103904132B (en) | 2014-03-14 | 2014-03-14 | A kind of method regulating titanium silicide/silicon Schottky contact potential barrier |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172632A (en) * | 2016-11-21 | 2018-06-15 | 丰田自动车株式会社 | The manufacturing method of semiconductor device |
| CN115799065A (en) * | 2022-11-17 | 2023-03-14 | 扬州国宇电子有限公司 | Preparation method of TiSi potential barrier |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080230804A1 (en) * | 2007-03-22 | 2008-09-25 | Kabushiki Kaisha Toshiba | Semiconductor device and fabrication method of same |
| CN101697357A (en) * | 2009-05-12 | 2010-04-21 | 上海芯石微电子有限公司 | Schottky barrier diode and preparation method thereof |
| CN101916719A (en) * | 2010-07-17 | 2010-12-15 | 厦门大学 | Method for adjusting Schottky contact barrier height of metal and N-type germanium |
| CN103311316A (en) * | 2012-03-08 | 2013-09-18 | 中国科学院微电子研究所 | Schottky diode and manufacturing method thereof |
-
2014
- 2014-03-14 CN CN201410093312.1A patent/CN103904132B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080230804A1 (en) * | 2007-03-22 | 2008-09-25 | Kabushiki Kaisha Toshiba | Semiconductor device and fabrication method of same |
| CN101697357A (en) * | 2009-05-12 | 2010-04-21 | 上海芯石微电子有限公司 | Schottky barrier diode and preparation method thereof |
| CN101916719A (en) * | 2010-07-17 | 2010-12-15 | 厦门大学 | Method for adjusting Schottky contact barrier height of metal and N-type germanium |
| CN103311316A (en) * | 2012-03-08 | 2013-09-18 | 中国科学院微电子研究所 | Schottky diode and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172632A (en) * | 2016-11-21 | 2018-06-15 | 丰田自动车株式会社 | The manufacturing method of semiconductor device |
| CN115799065A (en) * | 2022-11-17 | 2023-03-14 | 扬州国宇电子有限公司 | Preparation method of TiSi potential barrier |
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| Publication number | Publication date |
|---|---|
| CN103904132B (en) | 2017-01-04 |
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Granted publication date: 20170104 Termination date: 20190314 |