CN103904132B - A kind of method regulating titanium silicide/silicon Schottky contact potential barrier - Google Patents
A kind of method regulating titanium silicide/silicon Schottky contact potential barrier Download PDFInfo
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- CN103904132B CN103904132B CN201410093312.1A CN201410093312A CN103904132B CN 103904132 B CN103904132 B CN 103904132B CN 201410093312 A CN201410093312 A CN 201410093312A CN 103904132 B CN103904132 B CN 103904132B
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- titanium silicide
- silicon
- oxygen atom
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- thin films
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- 229910021341 titanium silicide Inorganic materials 0.000 title claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 46
- 239000010703 silicon Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000005036 potential barrier Methods 0.000 title claims description 4
- 230000001105 regulatory effect Effects 0.000 title claims description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 34
- 239000010409 thin film Substances 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 17
- 239000010936 titanium Substances 0.000 claims description 17
- 229910052719 titanium Inorganic materials 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 16
- 239000012528 membrane Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 238000004064 recycling Methods 0.000 claims description 4
- 238000003746 solid phase reaction Methods 0.000 claims description 4
- 238000010671 solid-state reaction Methods 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 abstract description 12
- 238000012545 processing Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 4
- 229910008486 TiSix Inorganic materials 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000011017 operating method Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention belongs to microelectronics technology, a kind of regulate the method for Schottky contact barrier between titanium silicide and silicon.The present invention, by introducing appropriate oxygen atom in titanium silicide thin films, forms titanium silicide (TiSix, include oxygen atom) and/silicon Schottky contact structure, it is achieved to effective regulation of Schottky contact barrier between titanium silicide and silicon.Comparing the technological process of common titanium silicide/silicon Schotty commutation diode, the present invention has only to increase the introducing technique of a step oxygen atom, so that it may obtaining the regulation of obvious contact berrier, whole processing step is simple, has a good application prospect.
Description
Technical field
The invention belongs to microelectronics technology, be specifically related to regulate titanium silicide (TiSix) and silicon between the method for Schottky contact barrier.
Background technology
Schottky device is not only widely used in the electronic information fields such as communication, computer, automobile, and it is applied to the national defence key projects such as Aeronautics and Astronautics, due to titanium have that fusing point is high, proportion is little, specific strength is high, good toughness, resisting fatigue, corrosion-resistant, heat conductivity is low, high and low temperature tolerance performance is good, under the conditions of rapid heat cycle, stress is little etc., and feature is to make high pressure, low forward voltage drop and the more satisfactory new material of high switching speed Schottky diode, current titanium silicide/silicon Schotty diode is widely studied.
The performance of schottky device is mainly restricted by Schottky contact barrier.The contact berrier of common titanium silicide/silicon Schotty commutation diode is about 0.69eV, this is owing to interface is due to Presence of an interface state, fermi level is pinned near the valence band of Si, causes electronic barrier relatively big, thus limits the lifting of titanium silicide/silicon Schotty commutation diode performance.Because electronic barrier height is the key factor determining ON state current size, bigger electronic barrier limits the flowing of electronics, and the ON state current causing device is little.
Current semiconductor device is constantly towards the direction progress of high energy low price, and processing step is as the key factor in constraint device production cost, is especially worth the concern of research worker.Conveniently being easy to get of simple, the technique consumptive material of processing step is all the important method of optimised devices technique.Owing to aliging at the bottom of the conduction band of titanium oxide and n-type silicon, titanium oxide/n-type silicon shows as Ohmic contact, and electronic barrier height is the lowest.The method effectively regulating contact berrier by introducing appropriate oxygen atom in the titanium silicide thin films in titanium silicide/silicon Schotty commutation diode is simple, and effect is notable, the contact berrier of gained titanium silicide/silicon Schotty commutation diode is about 0.61eV, far below the contact berrier of common titanium silicide/silicon Schotty commutation diode 0.69eV.
Summary of the invention
It is an object of the invention to propose the preparation method of titanium silicide/silicon Schotty commutation diode that a kind of processing step can regulate simply, again diode contact potential barrier.
Between regulation titanium silicide and silicon that the present invention proposes, the method for Schottky contact barrier, comprises the concrete steps that, introduces appropriate oxygen atom in the titanium silicide thin films in titanium silicide/silicon Schotty commutation diode, it is achieved contact berrier regulates.
The method of Schottky contact barrier between regulation titanium silicide and silicon that the present invention proposes, the method for described introducing oxygen atom can have two kinds, they respectively:
(1) after depositing metal titanium membrane on a silicon substrate, by ion implanting or diffusion way, oxygen atom is incorporated in metal titanium membrane, recycling annealing process, solid state reaction by metal titanium membrane Yu substrate silicon, while forming titanium silicide/silicon Schotty rectifying contact, oxygen atom is mixed in the titanium silicide thin films formed；Or
(2) after depositing metal titanium membrane on a silicon substrate, realizing the solid state reaction of Titanium and substrate silicon first with annealing process, generate titanium silicide/silicon Schotty rectifying contact, oxygen atom is incorporated in titanium silicide thin films by recycling ion implanting or diffusion technique.
In the present invention, the titanium silicide thin films containing oxygen atom ultimately generated is 10 with oxygen atom average body concentration in the nano thickness of substrate silicon contact interface titanium silicide thin films side 1015-1024 cm-3.Preferably oxygen atom average body concentration is 1020-1022
cm-3。
In the present invention, thermal annealing temperatures is 500 ~ 1000oC, the time is 1 second ~ 10 minutes.Preferably thermal annealing temperatures is 700 ~ 900oC, the time is 1 ~ 2 minute.
Due to the fact that the introducing technique having only to increase by a step oxygen atom in common titanium silicide/silicon Schotty transistor technology, so that it may obtaining the regulation of obvious contact berrier, whole processing step is simple.
The concrete operation step of the present invention is divided into two kinds, as follows:
The first scheme operating procedure:
1, the cleaning surface silicon chip substrate processed based on over cleaning carries out the deposit of metallic titanium membrane；
2, by ion implanting or diffusion way, appropriate oxygen atom is incorporated in metal titanium membrane；
3, carrying out thermal annealing, thermal annealing temperatures is 500 ~ 1000oC, the time is 1 second ~ 10 minutes so that the titanium silicide thin films containing oxygen atom ultimately generated is 10 with oxygen atom average body concentration in the nano thickness of substrate silicon contact interface titanium silicide thin films side 1015-1024 cm-3。
First scheme operating procedure:
1, the cleaning surface silicon chip substrate processed based on over cleaning carries out the deposit of metallic titanium membrane；
2, carrying out thermal annealing, thermal annealing temperatures is 500 ~ 1000oC, the time is 1 second ~ 10 minutes；
3, ion implanting or diffusion technique is utilized to be incorporated in titanium silicide thin films by appropriate oxygen atom so that the titanium silicide thin films containing oxygen atom ultimately generated is 10 with oxygen atom average body concentration in the nano thickness of substrate silicon contact interface titanium silicide thin films side 1015-1024 cm-3。
The present invention, by introducing appropriate oxygen atom in titanium silicide thin films, forms titanium silicide (TiSix includes oxygen atom)/Si Schottky contact structure, it is achieved to effective regulation of Schottky contact barrier between titanium silicide and silicon.Under forward bias, the operating current of this kind of Schottky contacts is via the barrier region circulation after reducing, thus can obtain higher operating current.Its I-V characteristic contrasts as shown in Figure 1.
Accompanying drawing explanation
Fig. 1 is the impact that oxygen mixes on titanium silicide/silicon Schotty diode rectification characteristic.
Fig. 2 Fig. 6 is the schematic diagram (side view) of technological process.
Detailed description of the invention
Further describe the present invention below in conjunction with the accompanying drawings:
The first solution process step:
1, the cleaning surface silicon substrate processed based on over cleaning carries out the deposit of metallic titanium membrane, as shown in Figure 2；
2, appropriate oxygen atom is incorporated in metal titanium membrane, as shown in Figure 3 by ion implanting or diffusion way；
3, carrying out thermal annealing, thermal annealing temperatures is 500 ~ 1000oC, the time is 1 second ~ 10 minutes so that the titanium silicide thin films containing oxygen atom ultimately generated is 10 with oxygen atom average body concentration in the nano thickness of substrate silicon contact interface titanium silicide thin films side 1015-1024 cm-3, final result is as shown in Figure 6.
First scheme processing step:
1, the cleaning surface silicon chip substrate processed based on over cleaning carries out the deposit of metallic titanium membrane, as shown in Figure 1；
2, carrying out thermal annealing, thermal annealing temperatures is 500 ~ 1000oC, the time is 1 second ~ 10 minutes, as shown in Figure 4；
3, ion implanting or diffusion technique is utilized to be incorporated in titanium silicide thin films by appropriate oxygen atom, as shown in Figure 5 so that the titanium silicide thin films containing oxygen atom ultimately generated is 10 with oxygen atom average body concentration in the nano thickness of substrate silicon contact interface titanium silicide thin films side 1015-1024 cm-3, final result is as shown in Figure 6.
Claims (3)
1. the method regulating titanium silicide/silicon Schottky contact potential barrier, it is characterised in that concretely comprise the following steps: introduce appropriate oxygen atom in the titanium silicide thin films in titanium silicide/silicon Schotty commutation diode, it is achieved contact berrier regulates；
The method of described introducing oxygen atom has two kinds, they respectively:
(1) after depositing metal titanium membrane on a silicon substrate, by ion implanting or diffusion way, oxygen atom is incorporated in metal titanium membrane, recycling annealing process, make metal titanium membrane and substrate silicon generation solid state reaction, while forming titanium silicide/silicon Schotty rectifying contact, oxygen atom is mixed in the titanium silicide thin films formed；
(2) after depositing metal titanium membrane on a silicon substrate, Titanium and substrate silicon generation solid state reaction is made first with annealing process, generating titanium silicide/silicon Schotty rectifying contact, oxygen atom is incorporated in titanium silicide thin films by recycling ion implanting or diffusion technique, and carries out suitable after annealing process.
Method the most according to claim 1, it is characterised in that described annealing temperature is 500 ~ 1000 DEG C, the time is 1 second ~ 10 minutes.
Method the most according to claim 1, it is characterised in that the titanium silicide thin films containing oxygen atom ultimately generated is 10 with oxygen atom average body concentration in titanium silicide thin films 10 nano thickness of substrate silicon contact interface side15-1024 cm-3。
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410093312.1A CN103904132B (en) | 2014-03-14 | 2014-03-14 | A kind of method regulating titanium silicide/silicon Schottky contact potential barrier |
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| CN103904132A CN103904132A (en) | 2014-07-02 |
| CN103904132B true CN103904132B (en) | 2017-01-04 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101697357A (en) * | 2009-05-12 | 2010-04-21 | 上海芯石微电子有限公司 | Schottky barrier diode and preparation method thereof |
| CN101916719A (en) * | 2010-07-17 | 2010-12-15 | 厦门大学 | Method for adjusting Schottky contact barrier height of metal and N-type germanium |
| CN103311316A (en) * | 2012-03-08 | 2013-09-18 | 中国科学院微电子研究所 | Schottky diode and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101697357A (en) * | 2009-05-12 | 2010-04-21 | 上海芯石微电子有限公司 | Schottky barrier diode and preparation method thereof |
| CN101916719A (en) * | 2010-07-17 | 2010-12-15 | 厦门大学 | Method for adjusting Schottky contact barrier height of metal and N-type germanium |
| CN103311316A (en) * | 2012-03-08 | 2013-09-18 | 中国科学院微电子研究所 | Schottky diode and method of manufacturing the same |
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Granted publication date: 20170104 Termination date: 20190314 |