CN100593842C - Method for preparing nanocrystalline diamond film field-effect transistor - Google Patents
Method for preparing nanocrystalline diamond film field-effect transistor Download PDFInfo
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- CN100593842C CN100593842C CN200810040004A CN200810040004A CN100593842C CN 100593842 C CN100593842 C CN 100593842C CN 200810040004 A CN200810040004 A CN 200810040004A CN 200810040004 A CN200810040004 A CN 200810040004A CN 100593842 C CN100593842 C CN 100593842C
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Abstract
The invention relates to a preparation method for a nano-crystalline diamond film field effect transistor, which essentially comprises the steps: putting a pre-treated silicon substrate in the reaction chamber of a microwave plasma chemical vapor deposition device to be taken as a deposition substrate; carrying out the growth of the diamond film in the mixed reaction gas of methane and hydrogen; carrying out hydrogen plasma etching and obtaining the p-typed nano-crystalline diamond film; adopting an ion beam sputtering device and lithography masks technology to manufacture the source, drain and gate electrodes of the field effect transistor on the surface of the p-typed nano-crystalline diamond film. The method can directly manufacture the device without polishing treatment, which has theadvantages of simple manufacturing technique and lower cost, thus being beneficial to the large-scale application of the diamond based devices.
Description
Technical field
What the present invention relates to is a kind of based on the p type manufacture method of dopen Nano diamond Thin Film Transistor (TFT) not, belongs to the fabricating parts in inorganic non-metal field.
Background technology
In recent years, photoelectron technology plays more and more important effect in advanced information society, and the integrated and photoelectron integrated technology of photon is had higher requirement to the power of device, frequency, working temperature etc.Photoelectric device-the photistor that is made of bipolar transistor (BJT) or field-effect transistor three terminal devices such as (FET) has important application prospects.Ambipolar relatively photistor, the field effect photistor can be realized the hypervelocity optical detection, the response time can reach tens ps, is expected to be used widely in photoelectricity is integrated.FET generally adopts Si and GaAs material at present.Traditional silicon device more and more shows its limitation in high frequency, high-power field, and is unwell to high radiation condition.Though the GaAs device can obtain excellent high frequency characteristics,, can't realize high power work because the disruptive field intensity and the thermal conductivity of material are low.The research of this respect at present mainly concentrates on wide bandgap semiconductor materials such as SiC, GaN and diamond, because the restriction of material itself, can't solve heat dissipation problem well based on the device of SiC or GaN material.Diamond is a kind of functional material that integrates multiple premium properties, has characteristics such as high breakdown electric field, high saturated charge carrier drift speed, high heat conductance.In addition, diamond also has good chemical stability, good mechanical performance, attriting performance, resistance to elevated temperatures reaches and organism has favorable compatibility, cause the extensive concern in fields such as microelectric technique, photoelectron technology, micromechanics, become one of focus of new material research.The eighties in 20th century, chemical vapor deposition (CVD) method synthesis of diamond film technology and p type doping techniques make a breakthrough, and make people utilize adamantine hope to be achieved on a large scale.Studies show that: the electronic device based on diamond thin can be brought into play irreplaceable effect in the occasion that silicon device can't be used, can realize high temperature, at a high speed, high power and radioresistance device, therefore be acknowledged as one of the most rising novel electron material.
Because diamond n type doping techniques is not also broken through, all diamond based fets of report are p type boron (B) doped channel device or the non-doped with hydrogen of p type (H) terminal end surface channel device at present.But because boron acceptor activation energy big (370meV), even at high temperature can not activate fully, cause B doped channel FET to have less drain current and mutual conductance, and cause big reverse leakage current again when under high temperature, big voltage, working, be unfavorable for device work.It was gratifying, under the not doping situation, the CVD diamond surface is handled by hydrogen plasma can obtain hydrogen (H) terminal p type surface conduction channel, this raceway groove is equivalent to the two-dimensional hole gas (2DHG) that an activation energy is lower than 23meV, and successfully be made into H terminal end surface channel fet device, the manufacture craft of this H terminal end surface channel device is very simple, does not need doping, oxidation and passivation layer deposition process, and cost of manufacture is starkly lower than p type B doped diamond FET and silica-based FET.Yet, the doping of developing in the world at present or not the doped diamond based fet all adopt the micron order polycrystalline diamond films, surface roughness often higher (representative value is that a hundreds of nm is to several μ m magnitudes), the electrode that needs just to carry out device after the polishing is made, and because diamond hardness is very big, handle very difficulty by means such as machinery, chemical polishings, cost is relatively too high, limited the research of diamond based fet device, caused it not open up new prospect fully as yet so far in the application aspect microelectronics, optoelectronics and the bioelectronics.
With respect to the micron order polycrystalline diamond films, the nanocrystalline diamond film surface is very smooth, surface roughness can reach tens even several nanometer scale, do not need follow-up polishing just can directly carry out the delicate execution of electrode, and the nanocrystalline diamond film that obtains under the suitable preparation technology has p type conductive capability equally, need not to carry out p type boron and mixes.Therefore the p type not dopen Nano diamond Thin Film Transistor (TFT) with respect to traditional diamond based transistor, the device activation voltage of both can having avoided mixing is too high, the shortcoming that drain current is too little, simplified manufacture craft than polycrystalline diamond films device again, greatly reduce cost of manufacture, this will greatly promote the application of diamond based fet device in every field.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of nanocrystalline diamond film field-effect transistor.
For achieving the above object, the present invention adopts following technical scheme.
A kind of preparation method of nanocrystalline diamond film field-effect transistor is characterized in that this technology has following process and step:
1) silicon substrate preliminary treatment: adopt (100) mirror finish silicon chip as deposition substrate; Adopt HF acid ultrasonic cleaning 5～15 minutes, to remove the silicon oxide layer on surface; In order to increase the nucleation density of nanocrystalline diamond film, the bortz powder foot couple silicon substrate mechanical lapping of use 100nm particle diameter 10～15 minutes; With the ultrasonic cleaning 10～20 minutes in the acetone soln that is mixed with the 100nm bortz powder of the silicon chip after grinding; Again silicon chip is used deionized water and acetone ultrasonic cleaning respectively at last,, put into the reative cell of microwave plasma CVD (MPCVD) device after the oven dry until the silicon chip surface cleaning;
2) p type nanocrystalline diamond film preparation: with vacuum pump reative cell is evacuated to 5～7Pa earlier, with molecular pump reative cell is evacuated to 10 then
-2Below the Pa, feed reacting gas (mist of methane and hydrogen), the flow of regulating methane and hydrogen is respectively 40～60 standard ml/min and 120～160 standard ml/min; The air pressure of reative cell is set at 0.5KPa～1kPa; Substrate bias is set at 50～150V; Underlayer temperature is controlled at 620～680 ℃; Microwave power is set at 1200W～1600W; 2～4 hours film growth time; After growth course is finished methane flow is adjusted to 0, adjusting air pressure is 2～3KPa, kept hydrogen flowing quantity 120～160 standard ml/min 1～2 hour, promptly used the hydrogen plasma etching processing 1～2 hour, form a p type thin layer on the nanocrystalline diamond film surface, the same when other condition is with growth in this etching processing process;
3) preparation of field-effect transistor (FET): adopt ion beam sputtering instrument and mask technology source, leakage and gate electrode at fabricating yard, p type nanocrystalline diamond film surface effect transistor, source, drain electrode adopt gold as electrode material, form Ohm contact electrode, it is electrode material that gate electrode adopts aluminium, forms the schottky junctions touched electrode; Electrode is a strip, and width is 400～600 microns, is spaced apart 200～300 microns between the electrode, and the metal electrode layer thickness is 100～300nm.
The present invention not on the dopen Nano diamond thin-film material, designs and produces the FET device in the p type, for the making of high-performance, low-cost diamond thin FET device provides a kind of new method.
The present invention is characterized in the p type dopen Nano diamond film not that obtains the H terminal by the hydrogen plasma of nanocrystalline diamond film is handled; On nanocrystalline diamond film, make electrode, the diamond thin FET device that obtained performance is good.
The present invention compares with prior art, has following remarkable advantage:
(1) the present invention is having incomparable advantage than material FET devices such as traditional Si, GaAs aspect high frequency, the high power applications.
(2) the present invention need not mix and just can obtain p type diamond, has much lower excitation voltage and bigger drain current than existing boron-doped diamond based fet, and device performance improves.
(3) the present invention does not need polishing just can directly carry out the device electrode making, has simpler manufacture craft and lower cost than existing polycrystalline diamond based fet device.This helps promoting the large-scale application of diamond based device.
Description of drawings
Fig. 1 is a not dopen Nano diamond Thin Film Transistor (TFT) structural representation of p type of the present invention.
Embodiment
After now specific embodiments of the invention being described in.
Embodiment 1
The technical process and the step of present embodiment are as follows:
(1) silicon substrate preliminary treatment: adopt 1 * 1cm
2(100) the mirror finish silicon chip is as deposition substrate.Adopt HF acid ultrasonic cleaning 10 minutes, remove the silicon oxide layer of silicon face.In order to increase nucleation density, the bortz powder foot couple silicon substrate mechanical lapping of use 100nm particle diameter 10 minutes.With the ultrasonic cleaning 15 minutes in the acetone soln that is mixed with the 100nm bortz powder of the silicon chip after grinding.Then with silicon chip with washed with de-ionized water 5 minutes, clean 2 times with acetone again, each 10 minutes, put into the reative cell of microwave plasma CVD device after the oven dry.
(2) p type nanocrystalline diamond film preparation: with vacuum pump reative cell is evacuated to 5Pa earlier, with molecular pump reative cell is evacuated to 5 * 10 then
-3Pa feeds reacting gas (mist of methane and hydrogen), and the flow of regulating methane and hydrogen is respectively 50 standard ml/min and 160 standard ml/min; The air pressure of settling chamber is set at 1kPa; Substrate bias is set at 100V; Underlayer temperature is controlled at 660 ℃; Microwave power is set at 1500W; 3 hours film growth time; After growth course is finished methane flow is adjusted to 0, adjusting air pressure is 3KPa, kept hydrogen flowing quantity 160 standard ml/min 1 hour, promptly used the hydrogen plasma etching processing 1 hour, form a p type thin layer on the nanocrystalline diamond film surface, the same when other condition is with growth in this etching processing process.
(3) preparation of field-effect transistor (FET): adopt LDM150D ion beam sputtering instrument and mask technology to make source, leakage and the gate electrode of FET device as shown in Figure 1 on p type nanocrystalline diamond film surface.Source, drain electrode adopt gold as electrode material, form ohmic contact, and it is electrode material that gate electrode adopts aluminium, form Schottky contacts, form depletion layer in p type diamond layer.Electrode is a strip, and width is 400 microns, is spaced apart 200 microns between the electrode, and the gold electrode layer thickness is 200nm, and the aluminium electrode layers thickness is 100nm.
Carry out electric performance test by the FET device to above preparation, the result shows that this device has tangible field-effect transistor I-E characteristic.When gate voltage be-during 0.5V, drain saturation current reaches 8 μ A.
Claims (1)
1. the preparation method of a nanocrystalline diamond film field-effect transistor is characterized in that this preparation method has following process and step:
1) silicon substrate preliminary treatment: to (100) mirror finish silicon chip, adopt HF acid ultrasonic cleaning 5～15 minutes, to remove the silicon oxide layer on surface, with the bortz powder foot couple silicon chip mechanical lapping of 100nm particle diameter 10～15 minutes, ultrasonic cleaning 10～20 minutes in the acetone soln that is mixed with the 100nm diamond dust again, then silicon chip is used deionized water and acetone ultrasonic cleaning respectively, until the silicon chip surface cleaning, the reative cell of putting into microwave plasma CVD device after the oven dry is as deposition substrate;
2) p type nanocrystalline diamond film preparation: with vacuum pump reative cell is evacuated to 5～7Pa earlier, with molecular pump reative cell is evacuated to 10 then
-2Below the Pa, feed the hybrid reaction gas of methane and hydrogen, the flow of regulating methane and hydrogen is respectively 40～60 standard ml/min and 120～160 standard ml/min; The air pressure of reative cell is set at 0.5～1kPa, substrate bias is set at 50～150V, underlayer temperature is controlled at 620～680 ℃, microwave power is set at 1200～1600W, and 2～4 hours film growth time is after growth course is finished, carry out the hydrogen plasma etching processing: methane flow is adjusted to 0, adjusting air pressure is 2～3KPa, keeps hydrogen flowing quantity 120～160 standard ml/min 1～2 hour, promptly gets p type nanocrystalline diamond film;
3) preparation of nanocrystalline diamond film field-effect transistor: adopt ion beam sputtering instrument and mask technology source, leakage and gate electrode at fabricating yard, p type nanocrystalline diamond film surface effect transistor, source, drain electrode adopt gold as electrode material, form Ohm contact electrode, it is electrode material that gate electrode adopts aluminium, forms the schottky junctions touched electrode; Electrode is a strip, and width is 400～600 microns, is spaced apart 200～300 microns between the electrode, and the metal electrode layer thickness is 100～300nm.
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Families Citing this family (16)
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| CN101859704B (en) * | 2010-05-26 | 2012-05-02 | 上海大学 | Preparation method of high-temperature and high-power field effect transistor |
| CN102403209B (en) * | 2011-11-10 | 2013-04-03 | 上海大学 | Preparation method for ohmic contact electrode based on diamond film field effect transistor |
| CN105510406A (en) * | 2016-01-13 | 2016-04-20 | 邱林新 | Transformer for preventing steam corrosion |
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| CN107331602A (en) * | 2017-06-27 | 2017-11-07 | 中国科学院微电子研究所 | Method for improving surface hole concentration of diamond material |
| CN107331701A (en) * | 2017-06-27 | 2017-11-07 | 中国科学院微电子研究所 | Method for optimizing conductive characteristics of diamond material channel |
| CN107146756A (en) * | 2017-06-27 | 2017-09-08 | 中国科学院微电子研究所 | Method for preparing field effect transistor with diamond substrate |
| CN107275192B (en) * | 2017-07-10 | 2019-10-22 | 北京科技大学 | High-performance diamond method for semiconductor is prepared based on inexpensive single-crystal diamond |
| CN107481935A (en) * | 2017-07-28 | 2017-12-15 | 中国电子科技集团公司第十三研究所 | The preparation method of diamond base field-effect transistor |
| CN108101031A (en) * | 2017-12-22 | 2018-06-01 | 燕山大学 | A kind of preparation method of diadust surface in situ growth graphene layer |
| CN108711549A (en) * | 2018-04-28 | 2018-10-26 | 西安交通大学 | Ultrathin alumina dielectric layer diamond field effect transistor and preparation method thereof |
| CN111334779B (en) * | 2018-12-18 | 2023-08-15 | 深圳先进技术研究院 | Boron-doped diamond film and preparation method thereof, oil-water separation element, water treatment electrode and preparation method thereof, and water treatment device |
| CN111211161A (en) * | 2020-01-15 | 2020-05-29 | 中山大学 | Bidirectional heat-dissipation longitudinal gallium nitride power transistor and preparation method thereof |
| CN113628944B (en) * | 2021-06-21 | 2022-11-04 | 北京大学 | Method for preparing field electron emission cathode |
| CN113529050B (en) * | 2021-07-05 | 2022-09-20 | 云南民族大学 | Plasma etching method for polishing diamond film and product thereof |
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| CN1532899A (en) * | 2003-03-24 | 2004-09-29 | 中国科学院化学研究所 | Method for preparing carbon nitride/carbon nano tube field effect transistor with nano junction |
| CN101053075A (en) * | 2005-06-20 | 2007-10-10 | 日本电信电话株式会社 | Diamond semiconductor element and method for manufacturing same |
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| CN1532899A (en) * | 2003-03-24 | 2004-09-29 | 中国科学院化学研究所 | Method for preparing carbon nitride/carbon nano tube field effect transistor with nano junction |
| CN101053075A (en) * | 2005-06-20 | 2007-10-10 | 日本电信电话株式会社 | Diamond semiconductor element and method for manufacturing same |
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