CN100405446C - Signal processing circuit, low voltage signal generator and picture display provided with them - Google Patents

Signal processing circuit, low voltage signal generator and picture display provided with them Download PDF

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Publication number
CN100405446C
CN100405446C CNB021200017A CN02120001A CN100405446C CN 100405446 C CN100405446 C CN 100405446C CN B021200017 A CNB021200017 A CN B021200017A CN 02120001 A CN02120001 A CN 02120001A CN 100405446 C CN100405446 C CN 100405446C
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circuit
signal
logic amplitude
low
logical operation
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CN1387177A (en
Inventor
山下英彦
鹫尾一
久保田靖
G·A·凯尔恩斯
M·J·布劳恩劳
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Sharp Corp
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Sharp Corp
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611—Control of matrices with row and column drivers
    • G09G3/3685—Details of drivers for data electrodes
    • G09G3/3688—Details of drivers for data electrodes suitable for active matrices only
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0289—Details of voltage level shifters arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Logic Circuits (AREA)
  • Liquid Crystal (AREA)

Abstract

A signal processing circuit, a low-voltage signal generator, and an image display incorporating the same is provided. There are provided: a first logic operation circuit which performs a logic operation using a high-amplitude logic signal; a transmission system having a load capacitance; and a low-voltage signal generator which is a step-down level shifter transforming an incoming high-amplitude logic signal from the first logic operation circuit to a low-amplitude logic signal having a lower amplitude than the high-amplitude logic signal for output to the transmission system. In the configuration, the first logic operation circuit operates based on a high-amplitude logic signal, and is therefore free from malfunctions and performs operations at high speed. Further, the transmission system introducing a load capacitance transmits a low-amplitude logic signal and therefore restrains increases in electric power consumption and occurrence of unnecessary radiation.

Description

Signal processing circuit, low voltage signal generator and image display device thereof
Technical field
Circuit that the present invention relates to the signal that image display devices such as for example liquid crystal indicator are applied is provided etc. carries out the low voltage signal generator of the signal processing circuit of logical operation and wherein used generation low voltage signal and the image display device with these parts like that.
Background technology
In having the device of extensive transmission circuit, known to have to be arranged in rectangular liquid crystal cell, EL (electroluminescence) element and LED (light emitting diode) element etc. and image display device that form.Such matrix type image display device, liquid crystal indicator 101 for example shown in Figure 28 comprise having the display part 102 of the rectangular configuration of pixel PIX, the data signal wire driving circuit 103 that drives each pixel PIX and scan signal line drive circuit 104.In case control circuit 105 generates the picture signal DAT of the show state of each pixel PIX of expression, just can be according to this picture signal DAT display image.The following describes concise and to the point working condition.In data signal wire driving circuit 103, utilize shift register, with clock signals such as clock signal SCK synchronously with signal wire S nPulse be sent to signal wire S successively N+1, utilize this shift pulse to generate sampling pulse.Its effect is, in sampling unit 103b, is taken into the picture signal DAT of input synchronously with sampling pulse, writes each data signal line SD.In addition, in scan signal line line drive circuit 104, utilize shift register, synchronous with clock signals such as clock signal GCK, the pulse of scan signal line GLn is displaced to scan signal line GL successively N+1Utilize this shift pulse to generate the strobe pulse of selecting scan signal line GLn.Its effect is the switching of this on-off element in control pixel PIX of repeatedly promoting blood circulation, and the picture signal (data) that writes each data signal line SD is write each pixel PIX, and the data that will write each pixel PIX are simultaneously kept.
In recent years, for miniaturization and the high definition that realizes liquid crystal indicator, and in order to lower installation cost, adopt the technology of the integrally formed pel array that shows and driving circuit on same substrate, this technology has caused people's attention.In the liquid crystal indicator of such driving circuit type in aggregates, because this substrate must use transparency carrier when transmission type liquid crystal display device (constitute present widely used), therefore in most cases adopt the polysilicon system silicon thin film transistor that can on quartz base plate or glass substrate, constitute as active component.
The mobility of polysilicon system silicon thin film transistor (below be called " multi-crystal TFT ") is about 10～100cm 2About/VS, in addition, the threshold value of N type and P type is respectively+1～+ 4V and-1～-4V.In order to make circuit working, supply voltage and input logic amplitude must be much higher than the threshold value of TFT, thereby the voltage of the circuit that adopts multi-crystal TFT about for need of work 10～12V.
In addition, liquid crystal indicator can be used as PDA (Personal Digital Assistant, personal digital assistant) or the watch-dog of portable information apparatus such as mobile phone or desk-top computer, these devices itself are to be made of the IC or the LSI that adopt monocrystalline silicon, and signal voltage is the highest also to have only 3～5V.Therefore, low logic amplitude input control signal with 3V was housed in the past boosted to level shift circuit about 12V in LCD panel.For example a day disclosure special permission spy opens shown in flat 11-272240 communique (open day is on October 8th, 1999) and the United States Patent (USP) No. 6081131 (the patent date of record is June 27 in 2000).These as shown in figure 29, before the input of data signal wire driving circuit 103 and scan signal line drive circuit 104, level shift circuit is set, with the low logic amplitude control signal of outside input in addition level move, output to the shift register of each driving circuit again.
But in above-mentioned method, the clock signal that shift register drives usefulness is high logic amplitude signal, but also with the distribution of data signal wire driving circuit 103 roughly the same length on transmit.
Here consider the load capacitance of shift register clock signal wire.Shown in Figure 30 is that general shift register is a D flip-flop.Clock signal distribution (CK and CKB) links to each other with whole shift register, connects two transistorized grid levels of each level on each clock cable, load grid capacitance that Here it is.
In addition, distribution itself since with capacitance to substrate coupling, so electric capacity represents with following formula, promptly
C wire＝C plate+C fringe
＝ε ox(W-T/2)L/H+ε ox·2πL/ln[1+2H(1+(1+T/H) 1/2)/T]
＝ε ox{(W-T/2)/H+2π/ln[1+2H(1+(1+T/H) 1/2)/T]}L…(1)
In the formula, C WireBe total wiring capacitance, C PlateWiring capacitance during for consideration substrate and parallel flat, C FringeThe electric capacity that causes of edge effect for wiring.The result (" MOS integrated circuit basis ", former centre write, modern science society publish) of following formula for adopting the equivalent model shown in Figure 31 (a) and (b) replaces edge capacitance C with the cylinder wiring FringeEffect.In the formula, W is a wiring width, and L is a length of arrangement wire, and T is the wiring thickness, and H is a field oxide film thickness, ε OxBe the thick specific inductive capacity of field oxide film, by this formula as can be known, the wiring capacitance increase that is directly proportional with length of arrangement wire L.In addition also have the capacitive coupling with adjacent wire, its effect also is directly proportional with length of arrangement wire L.
That is to say that the load capacitance of clock cable increases along with the progression of shift register and the increase of length of arrangement wire and the increase that is directly proportional.
In addition,, were it not for static current sinking, then can be represented by the formula, promptly owing to the power that transmitting signal consumes
P＝C LfV 2…(2)
In the formula, P is a consumed power, C LBe load capacitance, f is a frequency of operation, and V is an operating voltage.
According to the result of formula (1) and (2), if signal transmits in the wiring with load, then consumed power with apart from being directly proportional increase.And if the signal logic amplitude of this transmission is big, then consumed power is pressed square increase of amplitude.Thereby, after being boosted with level shift circuit, exports to above-mentioned low logic amplitude input control signal in the example of prior art of data signal wire driving circuit and scan signal line drive circuit, and the consumed power of clock cable increases.In addition, because high logic amplitude and the wiring of clock signal at a high speed spread all over whole base plate, therefore might produce the unwanted width of cloth and penetrate.
Describedly different be the signal-line driving circuit of the liquid crystal indicator that the employing polysilicon that the Japanese kokai publication hei 6-95073 communique of Figure 32 (open day is on April 8th, 1994) proposes is made or the part of scan line drive circuit with top.Shift register 201 drives with low logic amplitude signal.Its output boosts to the high logic amplitude signal that liquid crystal drive is used with level shift circuit 202.On clock cable, only transmit low logic amplitude signal with this, penetrate to suppress the consumed power and the unwanted width of cloth.But in this example, because the shift register that all forms than the polysilicon of monocrystalline silicon difference with recited above, mobility and threshold value with low logic amplitude driving, the voltage margin that therefore drives usefulness is little, the probability height of generation misoperation.In addition, compare with adopting high logic amplitude signal, actuating speed is also slow.
TOHKEMY 2000-75842 communique (open day is on March 14th, 2000) and spy open 2000-163003 communique (open day is on June 16th, 2000) and then are following manner.Figure 33 is the circuit diagram of the general shift register of employing d type flip flop.Shift register 301 employing d type flip flop 302a, 302b ... the structure that is formed by connecting.Open the 2000-75842 communique and the spy opens in the 2000-163003 communique the spy, as shown in figure 34, the signal utilization that on clock cable, transmit with low logic amplitude level shift circuit 303a, the 303b of decentralized configuration at different levels ... boost and be high logic amplitude signal, drive shift register with this high logic amplitude signal then, reduce as the consumed power on the clock cable of transmission system with this.In addition, owing to make shift register work, therefore can improve above-mentioned spy and open problems such as shift register action surplus in the flat 6-95073 communique and actuating speed with high logic amplitude.
But, the spy who comprises level shift circuit in the input part of clock signals at different levels opens under the situation of 2000-75842 communique and the special shift register of opening the 2000-163003 communique, till the signal-line driving circuit or the level shift circuit in the shift register the scan line drive circuit of clock signal in, be to keep low logic amplitude constant from external control circuit to LCD panel.Thereby, in LCD panel, when needing that before signal-line driving circuit or scan line drive circuit the signal from control circuit carried out logical operation, since should low logic amplitude signal the voltage action surplus of computing is little as mentioned above, to produce misoperation, perhaps arithmetic speed is slow, has problems in practicality.For example, in order to reduce the driving frequency of the shift register in the data signal wire driving circuit, it is heterogeneous that shift register is formed sometimes.In this case, must handle carry out frequency division from the clock signal of external circuit.In order to carry out such logical operation, as mentioned above, if adopt multi-crystal TFT, then the characteristic deficiency needs high logic amplitude signal.
Like this, in adopting the multi-crystal TFT device, signal operation portion is needed high logic amplitude signal, and to very long transmission system,, then need low logic amplitude signal from low consumpting power and the angle that do not have the width of cloth to penetrate.
Summary of the invention
The present invention proposes in view of the above problems, its purpose is, be provided in the formation with the logical operation portion that needs high logic amplitude signal, can suppress the increase of consumed power and signal processing circuit that the unwanted width of cloth is penetrated, the wherein low voltage signal generator of used generation low voltage signal and image display device with these parts.
In order to achieve the above object, signal processing circuit of the present invention, it is characterized in that, have that to adopt high logic amplitude signal to carry out the 1st logical operation circuit of logical operation, the transmission system with load capacitance and reduced voltage level walking circuit be low voltage signal generator, described reduced voltage level walking circuit is imported high logic amplitude signal from the 1st logical operation circuit, the high logic amplitude signal of input is transformed to the low logic amplitude signal of amplitude less than this high logic amplitude signal, and the low logic amplitude signal of conversion is exported to above-mentioned transmission system.
Again, low voltage signal generator of the present invention, be to have the low voltage signal generator that is provided with in the signal processing circuit of the transmission system that adopts high logic amplitude signal to carry out the 1st logical operation circuit of logical operation and have load capacitance, it is characterized in that, high logic amplitude signal is transformed to the low logic amplitude signal of amplitude less than this high logic amplitude signal.
Adopt above-mentioned formation, after the 1st logical operation circuit carries out computing with high logic amplitude signal, the high logic amplitude signal of the 1st logical operation circuit being exported as the low voltage signal generator of reduced voltage level walking circuit is transformed to low logic amplitude signal, and the low logic amplitude signal of conversion is added on the transmission system of load capacitance.
Thereby, at the 1st logical operation circuit, owing to adopt high logic amplitude signal, therefore can not cause misoperation, can high-speed computation, in the transmission system of load capacitance is arranged,, therefore can transmit the output signal of the 1st logical operation circuit simultaneously with low consumpting power owing to adopt low logic amplitude signal.So, in formation, can suppress the increase and the unwanted width of cloth of consumed power and penetrate with the logical operation portion that needs high logic amplitude signal.That is to say that the reduced voltage level walking circuit that signal processing circuit that the logical operation portion of the high logic amplitude signal of needs and the above-mentioned transmission system of wishing to adopt low logic amplitude signal in order to reduce consumed power are combined can be provided and can generate low logic amplitude signal according to high logic amplitude signal be a low voltage signal generator.
Like this, for transmission system, the high voltage signal that utilizes certain the 1st circuit to need generates low voltage signal, and is transferred to the 2nd circuit, can reduce the consumed power of transmission system with this.That is can be provided in the circuit that adopts multi-crystal TFT, the logical operation portion of the high logic amplitude signal of needs is constituted with the circuit that needs the low transmission system logic amplitude signal, that have load capacitance to be made up in order to reduce consumed power and what generate low logic amplitude signal low voltage signal generator according to high logic amplitude signal is the reduced voltage level walking circuit.
In addition, as the 2nd logical operation circuit that is connected with above-mentioned transmission system, can be the circuit that adopts above-mentioned low logic amplitude signal to carry out logical operation, also can be the circuit that adopts high logic amplitude signal to carry out logical operation.The logical operation circuit that constitutes by polysilicon system silicon thin film transistor for example, high speed processing then must drive with high logic amplitude signal if desired, and if can low-speed processing, then can drive with low logic amplitude signal.In the above-described configuration, because the reduced voltage level walking circuit is set between the 1st logical operation circuit and transmission system, therefore compare with the situation that the reduced voltage level walking circuit is set between transmission system and the 2nd logical operation circuit, can suppress the increase and the unwanted width of cloth of consumed power and penetrate.
At the 2nd logical operation circuit is when adopting high logic amplitude signal to carry out the circuit of logical operation, between above-mentioned transmission system and the 2nd logical operation circuit, configuration will be transformed to amplitude from the low logic amplitude signal of above-mentioned transmission system input greater than the high logic amplitude signal of this low logic amplitude signal and export to the boost level walking circuit of the 2nd logical operation circuit.Like this,, also adopt high logic amplitude signal, can not cause misoperation, carry out high-speed computation even at the 2nd logical operation circuit.In addition, the high logic amplitude signal of the high logic amplitude signal that the 1st logical operation circuit adopts and the employing of the 2nd logical operation circuit can same-amplitude, also can various amplitude.
On the other hand, be when adopting low logic amplitude signal to carry out the circuit of logical operation,, therefore can suppress the expansion of circuit scale at the 2nd logical operation circuit owing to there is no need between transmission system and the 2nd logical operation circuit, the boost level walking circuit to be set.
In addition, image display device of the present invention, be a plurality of pixels with rectangular configuration, many data signal lines that are provided with at each row of above-mentioned a plurality of pixels, each capable multi-strip scanning signal wire that is provided with in above-mentioned a plurality of pixels, drive the data signal wire driving circuit of above-mentioned many data signal lines, and the image display device that drives the scan signal line drive circuit of above-mentioned multi-strip scanning signal wire, it is characterized in that, certain one drive circuit in above-mentioned data signal wire driving circuit and the said scanning signals line drive circuit or two driving circuits have the 1st logical operation circuit that adopts high logic amplitude signal to carry out logical operation, transmission system with load capacitance, and the reduced voltage level walking circuit is a low voltage signal generator, described reduced voltage level walking circuit is imported high logic amplitude signal from the 1st logical operation circuit, the high frequency logic amplitude signal of input is transformed to the low logic amplitude signal of amplitude less than this high logic amplitude signal, and the low logic amplitude signal of conversion is exported to above-mentioned transmission system.
Adopt above-mentioned formation, the low voltage signal generator of above-mentioned formation is set on the some driving circuits in data signal wire driving circuit and scan signal line drive circuit or two driving circuits.
Thereby, for the circuit that for example clock signal of input is carried out frequency division as the 1st logical operation circuit, adopt high logic amplitude signal, can not cause misoperation, carry out high-speed computation, for transmission system, adopt low logic amplitude signal simultaneously, can transmit the output signal of the 1st logical operation circuit with low consumpting power with load capacitance.Therefore, in image display device, can realize high speed logic computing and low power consumption simultaneously.
Other purposes of the present invention, feature and advantage, according to the following stated with fully aware of.In addition, strong point of the present invention will obtain understanding in the following explanation of carrying out with reference to accompanying drawing.
Description of drawings
Figure 1 shows that the block scheme of the present invention's one form, is the block scheme of data signal wire driving circuit configuration example that expression has the two-phase shift register type active matrix image display device of low voltage signal generator.
Figure 2 shows that the block scheme of monolithic active matrix image display device configuration example,
Figure 3 shows that the circuit diagram of rising edge type 2 frequency divider configuration examples.
Figure 4 shows that the circuit diagram of negative edge type 2 frequency divider configuration examples.
Figure 5 shows that the action timing diagram of 2 frequency dividers and shift register.
Fig. 6～Figure 13 shows that circuit diagram of low voltage signal generator configuration example of the present invention.
Figure 14 shows that the working timing figure of low voltage signal generator shown in Figure 6.
Figure 15 shows that the working timing figure of low voltage signal generator shown in Figure 7.
Figure 16 shows that the working timing figure of low voltage signal generator shown in Figure 8.
Figure 17 shows that the working timing figure of low voltage signal generator shown in Figure 9.
Figure 18 shows that the working timing figure of low voltage signal generator shown in Figure 10.
Figure 19 shows that the working timing figure of low voltage signal generator shown in Figure 11.
Figure 20 shows that the working timing figure of low voltage signal generator shown in Figure 12.
Shown in Figure 21 is the working timing figure of low voltage signal generator shown in Figure 13.
Shown in Figure 22 is the block scheme of the universal of circuit formation of the present invention.
Shown in Figure 23ly being the block scheme of another form of the present invention, is the block scheme of the data signal wire driving circuit configuration example of the active matrix image display device of expression with low voltage signal generator and inversion clock signal generator.
Shown in Figure 24ly being the block scheme of another form of the present invention, is the block scheme of the digital data signal line drive circuit configuration example of the active matrix image display device of expression with low voltage signal generator.
Shown in Figure 25ly being the block scheme of another form of the present invention, is the block scheme that expression and the circuit of Figure 22 constitute signal processing circuit configuration example inequality.
Figure 26 is the circuit diagram of the concise and to the point formation of expression circular type shaker.
Figure 27 is the curve map of the relation of oscillation frequency and supply voltage in the expression circular type shaker shown in Figure 26.
Figure 28 has the block scheme of the existing monolithic active matrix image display device configuration example of high voltage interface for expression.
Figure 29 has the block scheme of the existing monolithic active matrix image display device configuration example of low voltage interface for expression.
Shown in Figure 30 for representing that general shift register is the circuit diagram of d type flip flop configuration example.
Figure 31 (a) reaches (b) for trying to achieve the equivalent model that wiring capacitance is used.
Figure 32 is illustrated in the have level shift circuit that will boost as the output of the shift register of low logic amplitude signal, the block schemes of the configuration example of existing shift register at different levels.
Figure 33 is the block scheme of the configuration example of d type flip flop for the general shift register of expression.
Figure 34 is illustrated in have level shift circuit that the low logic amplitude signal as clock signal is boosted, the block schemes of the configuration example of existing shift register at different levels.
Embodiment
[example 1]
According to Fig. 1～Figure 22 an example of the present invention is described below.
The present invention can be widely used in adopting the circuit of polysilicon, below as a desirable example, just is applicable to that the situation of the image display device with two-phase shift register describes.In addition, here,, be that example describes with the liquid crystal indicator as image display device.
The heterogeneous shift register that comprises two-phase is when driving frequency is the irrealizable such high speed of single-phase shift register, is used for driving with low-speed parallel the shift register of usefulness.
Fig. 2 is the overall construction drawing of basic image display device, image display device has the display part 22 of the rectangular configuration of pixel PIX, data signal wire driving circuit 23, scan signal line drive circuit 24 and logical operation circuit 26, have LCD panel 21, have the control circuit 25 that each circuit is controlled simultaneously as display board.Data signal wire driving circuit 23 and scan signal line drive circuit 24 have shift register (23a and 24a) respectively.In addition, data signal wire driving circuit 23 also has the 23b of sampling portion.
Figure 1 shows that basic image display device overall construction drawing, be the data signal wire driving circuit among Fig. 2.Just by the interface portion of display board one side and external control circuit the frequency of clock signal is carried out the logical operation circuit 11 (the quite circuit 26 of Fig. 2) of frequency division and had constituting as the shift register 16a of two-phase shift register and the data signal wire driving circuit 12 of 16b and sample circuit 17 (circuit 23 that is equivalent to Fig. 2) at decentralized configuration level shift circuits at different levels as the LCD panel 10 (LCD panel 21 that is equivalent to Fig. 2) of the display board of image display device.Display part and scan signal line drive circuit in Fig. 1, have been omitted.
When reducing worker and reduce wiring capacitance, above-mentioned logical operation circuit 11, data signal wire driving circuit 12, not shown display part and scan signal line drive circuit are arranged on the same substrate.In addition, for integrated more pixel, enlarge display area, above-mentioned each driving circuit and logical operation circuit are made of the polysilicon system silicon thin film transistor that forms on glass substrate.Also have, even adopt common glass substrate (strain point is at the glass substrate below 600 ℃), in order not produce warpage or bending in response to the operation more than the height, above-mentioned polysilicon transistors will be made under the technological temperature below 600 ℃.
By the foregoing circuit that polysilicon system silicon thin film transistor forms, its driving voltage Vdd is set at for example about 12V.In addition, control circuit 25 is to form with the single crystal silicon pipe on the substrate different with above-mentioned each circuit 22～24 and 26 among Fig. 2, and driving voltage Vhh is set at the value of the driving voltage Vdd that is lower than above-mentioned polysilicon circuit for for example 3V or below the 3V.
The following describes working condition.The clock signal ck of 3V, the 3MHz that is generated by control circuit and the inversion clock signal ckb with complementary relationship utilize boost level walking circuit 13a and the 13b in the LCD panel 10 of Fig. 1 to boost to 12V.Signal separately utilizes 2 frequency divider 14a and 14b, and frequency is reduced half, generates two signals with complementary relationship.Promptly clock signal C K1 and the complementary signal thereof by clock signal ck generation 12V, 1.5MHz is inversion clock signal CK1B.Simultaneously, clock signal C K2 and the complementary signal thereof that generates 12V, 1.5MHz by the inversion clock signal ckb of clock signal ck is inversion clock signal CK2B.
From the data signal wire driving circuit of external control circuit 25 with beginning pulse signal sp and anti-phase beginning pulse signal spb with complementary relationship, utilize boost level walking circuit 13c to boost to 12V, input to shift register 16a and 16b, in addition, each clock signal utilization by from the data signal wire driving circuit of external control circuit 25 with beginning pulse signal sp and have reduced voltage level walking circuit 15a, 15b, 15c and the 15d of the anti-phase beginning pulse signal spb control of complementary relationship, be depressurized to 3V from 12V.Should low logic amplitude clock signal data signal wire driving circuit 12 in, transmit, shift register at different levels boost to again the logical operation action need high logic amplitude be 12V, be used for pulse and be shifted.Generate sampling pulse then, take a sample, export to data signal line (not shown in Fig. 1), show with 17 pairs of data-signals of sample circuit.
Fig. 3 and Figure 4 shows that one of above-mentioned 2 frequency divider 14a and 14b circuit diagram example.Utilize the method for the clock signal of incoming frequency f, to output terminal Q and output terminal QB with complementary relationship thereof respectively clock signal and the inversion clock signal of output frequency f/2.Fig. 3 is the rising edge type with the rising edge synchronization action of input clock signal, and Fig. 4 is the negative edge type with input clock signal negative edge synchronization action.
Fig. 5 is the signal timing diagram of data signal wire driving circuit.If following liter is that example describes along type, then the rising edge of rising edge type 2 frequency divider 14a and the clock signal C K that utilizes level shift circuit 13a to boost generates clock signal C K1 and complementary signal is inversion clock signal CK1B synchronously.In addition, rising edge type 2 frequency divider 14b generate clock signal C K2 synchronously with the rising edge that utilizes the inversion clock signal CKB that level shift circuit 13b boosts and complementary signal is inversion clock signal CK2B.Like this, have the phase differential in 1/4 cycle between clock signal C K1 and CK2 are mutual, in addition, clock signal C K1B and CK2B also have the phase differential in 1/4 cycle.
What adopt here is the rising edge type, can certainly adopt the negative edge type.
Then, utilize reduced voltage level walking circuit 15a～15d of Fig. 1 to carry out step-down, and utilize boost level walking circuit at different levels to boost, clock signal C K1 and inversion clock signal CK1B are input to shift register 16a, and clock signal C K2 and inversion clock signal CK2B input to shift register 16b.The rising edge of sampling pulse S1 and CK1 is synchronous, and the rising edge of sampling pulse S2 and CK2 is synchronous.In addition, the rising edge of sampling pulse S3 and CK1B is synchronous, and the rising edge of sampling pulse S4 and CK2B is synchronous.Generate the sampling pulse of transmission successively of the sequential that decision takes a sample to data with this.
Figure 6 shows that the adoptable low voltage signal generator of the present invention is the example of the circuit diagram of reduced voltage level walking circuit.This reduced voltage level walking circuit is made of 4 transistors and 1 phase inverter, high logic amplitude clock signal is connected with described transistorized grid as input (INPUT), and low logic amplitude signal promptly begins pulse signal sp or anti-phase beginning pulse signal spb is connected with described transistorized source electrode.Beginning pulse signal sp is electronegative potential Vss in the almost whole period of 1 gated sweep time.In addition, anti-phase beginning pulse signal spb is noble potential Vhh in the almost whole period of 1 gated sweep time.Here, therefore Vhh is the high level of low-voltage amplitude owing to be the output of external control circuit 25, is 3V under the situation of earlier figures 1.Owing to come the Push And Release of oxide-semiconductor control transistors, so make the anti-phase beginning pulse signal spb of the noble potential Vhh that is connected with source electrode or the beginning pulse signal sp of the low-voltage Vss that is connected with source electrode passes through with the high logic amplitude signal of 12V.The anti-phase output that this reduced voltage level walking circuit generates output and has complementary relationship.
In this formation,, therefore can reduce the interface end subnumber of external control circuit 25 and LCD panel owing to not preparing to supply with again the power supply that the noble potential of low logic amplitude is used in order to drive the reduced voltage level walking circuit.Adopt beginning pulse and anti-phase beginning pulse in this example, but also can be with other low logic amplitude signals.This low voltage signal generator shown in Figure 6 is that the reduced voltage level walking circuit only is made of the N transistor npn npn, can certainly only constitute by the P transistor npn npn or by the CMOS that adopts N transistor npn npn and P transistor npn npn.
Figure 14 shows that low voltage signal generator shown in Figure 6 is the sequential chart of reduced voltage level walking circuit.It is that noble potential is 3V (=Vhh-Vss) the pulse of Vhh, electronegative potential Vss that data signal wire driving circuit begins pulse signal sp and anti-phase beginning pulse signal spb.On the other hand, because input is that frequency is carried out output after the logical operation of 2 frequency divisions, therefore has noble potential and is Vdd, electronegative potential and be 12V (=Vdd-Vss) the amplitude of Vss.Utilize this high logic amplitude signal to carry out Push And Release, generate the 3V that noble potential Vhh, electronegative potential are Vss (=Vhh-Vss) clock signal and inversion clock signal with this.
Figure 7 shows that the adoptable low voltage signal generator of the present invention is the example of the circuit diagram of reduced voltage level walking circuit.This reduced voltage level walking circuit is made of 4 transistors and 1 phase inverter, high logic amplitude clock signal is connected with described transistorized grid as input (INPUT), and low logic amplitude signal is that the low level of anti-phase beginning pulse signal spb or high logic amplitude and low logic amplitude is that power supply potential Vss is sent to described transistorized source electrode.Anti-phase beginning pulse signal spb is noble potential Vhh in the almost whole period of 1 gated sweep time.Here, therefore Vhh is the high level of low-voltage amplitude owing to be the output of external control circuit 25, is 3V under the situation of earlier figures 1.Owing to utilize the high logic amplitude signal of 12V to come the Push And Release of oxide-semiconductor control transistors, therefore make the noble potential Vhh of the anti-phase beginning pulse signal spb that is connected with source electrode or the high logic amplitude that is connected with source electrode reaches the electronegative potential Vss that hangs down the logic amplitude and passes through.
In this formation,, therefore can reduce the interface end subnumber of external control circuit 25 and LCD panel owing to not preparing to supply with again the power supply that the noble potential of low logic amplitude is used in order to drive the reduced voltage level walking circuit.Adopt anti-phase beginning pulse in this example, but also can be with other low logic amplitude signal.This low voltage signal generator shown in Figure 7 promptly reduces level shift circuit and only is made of the N transistor npn npn, can certainly only constitute by the P transistor npn npn or by the CMOS that adopts N transistor npn npn and P transistor npn npn.
Figure 15 shows that low voltage signal generator shown in Figure 7 is the sequential chart of reduced voltage level walking circuit.Anti-phase beginning is that noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) the pulse of Vss towards signal spb affectionately.In addition, because input is that frequency is carried out output after the logical operation of 2 frequency divisions, therefore has noble potential and is Vdd, electronegative potential and be 12V (=Vdd-Vss) the amplitude of Vss.Utilize this high logic amplitude signal to carry out Push And Release, the generation noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) clock signal and the inversion clock signal of Vss.
Figure 8 shows that the adoptable low voltage signal generator of the present invention is the example of the circuit diagram of reduced voltage level walking circuit.This reduced voltage level walking circuit is made of 4 transistors and 1 phase inverter, high logic amplitude clock signal is connected with described transistorized grid as input (INPUT), and the high level that low logic amplitude signal promptly begins pulse signal sp or logic amplitude is that power supply potential Vhh is connected with described transistorized source electrode.Beginning pulse signal sp is electronegative potential Vss in the almost whole period of 1 gated sweep time.Here, therefore Vhh is 3V under the situation of above-mentioned Fig. 1 owing to be the output of external control circuit 25.Owing to utilize the high logic amplitude signal of 12V to come the Push And Release of oxide-semiconductor control transistors, therefore make the electronegative potential Vss of the beginning pulse signal sp that is connected with source electrode or the noble potential Vhh of the low logic amplitude that is connected with source electrode passes through.
Be to adopt the beginning pulse in this example, but also can adopt other low logic amplitude signal.This low voltage signal generator shown in Figure 8 is that the reduced voltage level walking circuit only is made of the N transistor npn npn, can certainly only constitute by the P transistor npn npn or by the CMOS that adopts N transistor npn npn and P transistor npn npn.
Figure 16 is the sequential chart of reduced voltage level walking circuit for expression low voltage signal generator shown in Figure 8.Beginning pulse signal sp is that noble potential is that Vhh, electronegative potential are the 3V (=Vhh-Vss) pulse of Vss.In addition, because input is that frequency is carried out output after the logical operation of 2 frequency divisions, therefore has noble potential and is Vdd, electronegative potential and be 12V (=Vdd-Vss) the amplitude of Vss.Utilize high logic amplitude signal to carry out Push And Release, the generation noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) clock signal and the inversion clock signal of Vss.
Figure 9 shows that the adoptable low voltage signal generator of the present invention promptly reduces the example of the circuit diagram of level shift circuit.This reduced voltage level walking circuit is made of 4 transistors and 1 phase inverter, high logic amplitude clock signal is connected with described transistorized grid as input (INPUT), and the high level of low logic amplitude is that the low level of power supply potential Vhh or high logic amplitude and low logic amplitude is that power supply potential Vss is connected with described transistorized source electrode.The electronegative potential Vss of the noble potential Vhh of low logic amplitude or high logic amplitude and low logic amplitude externally control circuit 25 generates, and Vhh is 3V under the situation of earlier figures 1.Owing to utilize the high logic amplitude signal of 12V to come the Push And Release of oxide-semiconductor control transistors, the noble potential Vhh of the low logic amplitude that is connected with source electrode or the electronegative potential Vss of high logic amplitude and low logic amplitude passed through.
This low voltage signal generator shown in Figure 9 is that the reduced voltage level walking circuit only is made of the N transistor npn npn, can certainly only constitute by the P transistor npn npn or by the CMOS that adopts N transistor npn npn and P transistor npn npn.
Figure 17 is the sequential chart of reduced voltage level walking circuit for expression low voltage signal generator shown in Figure 9.Because the noble potential of low logic amplitude is Vhh, the electronegative potential of high logic amplitude and low logic amplitude is Vss, thus potential difference (PD) be 3V (=Vhh-Vss).In addition, because input is that frequency is carried out output after the logical operation of 2 frequency divisions, therefore has noble potential and is Vdd, electronegative potential and be 12V (=Vdd-Vss) the amplitude of Vss.Utilize this high logic amplitude signal to carry out Push And Release, the generation noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) clock signal and the inversion clock signal of Vss.
Figure 10 shows that the adoptable low voltage signal generator of the present invention is about to the example of the circuit diagram of low level walking circuit.This reduced voltage level walking circuit is made of 2 transistors and 1 phase inverter, high logic amplitude clock signal is connected with described transistorized grid as input (INPUT), and low logic amplitude signal promptly begins pulse signal sp or anti-phase beginning pulse signal spb is connected with described transistorized source electrode.Beginning pulse signal sp is electronegative potential Vss in the almost whole period of 1 gated sweep time.On the other hand, anti-phase beginning pulse signal spb also is noble potential Vhh in the almost whole period of 1 gated sweep time.Here, therefore Vhh is the high level of low-voltage amplitude owing to be the output of external control circuit 5, is 3V under the situation of earlier figures 1.Owing to utilize the high logic amplitude signal of 12V to come the Push And Release of oxide-semiconductor control transistors, therefore make the noble potential Vhh of the anti-phase beginning pulse signal spb that is connected with source electrode or the electronegative potential Vss of the beginning pulse signal sp that is connected with source electrode passes through.This reduced voltage level walking circuit generates output signal.
In this formation,, therefore can reduce the interface end subnumber of external control circuit 25 and LCD panel owing to not preparing to supply with again the power supply that the noble potential of low logic amplitude is used in order to drive the reduced voltage level walking circuit.Be to adopt beginning pulse and anti-phase beginning pulse in this example, but also can be with other low logic amplitude signal.This low voltage signal generator shown in Figure 10 promptly reduces level shift circuit and only is made of the N transistor npn npn, can certainly only constitute by the P transistor npn npn or by the CMOS that adopts N transistor npn npn and P transistor npn npn.
Figure 18 is the sequential chart of reduced voltage level walking circuit for low voltage signal generator shown in Figure 10.The beginning pulse signal sp of data signal wire driving circuit and anti-phase beginning pulse signal spb are that noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) the pulse of Vss.In addition, because input is that frequency is carried out output after the logical operation of 2 frequency divisions, therefore has noble potential and is Vdd, electronegative potential and be 12V (=Vdd-Vss) the amplitude of Vss.Utilize this high logic amplitude signal to carry out Push And Release, the generation noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) the clock signal of Vss.
Figure 11 shows that the adoptable low-potential signal generator of the present invention promptly reduces the example of the circuit diagram of level shift circuit.This reduced voltage level walking circuit is made of 2 transistors and 1 phase inverter, high logic amplitude clock signal is connected with described transistorized grid as input (INPUT), low logic amplitude signal is that the low level of anti-phase beginning pulse spb or high logic amplitude and low logic amplitude is that power supply potential Vss is connected with described transistorized source electrode, and anti-phase beginning pulse signal spb is noble potential Vhh in the almost whole period of 1 gated sweep time.Here, therefore Vhh is the high level of low-voltage amplitude owing to be the output of external control circuit 25, is 3V under the situation of earlier figures 1.Owing to utilize the high logic amplitude signal of 12V to come the Push And Release of oxide-semiconductor control transistors, therefore make the noble potential Vhh of the anti-phase beginning pulse signal spb that is connected with source electrode or the high logic amplitude that is connected with source electrode reaches the low-voltage Vss that hangs down the logic amplitude and passes through.
In this formation,, therefore can reduce the interface end subnumber of external control circuit 25 and LCD panel owing to not preparing to supply with again the power supply that the noble potential of low logic amplitude is used in order to drive the reduced voltage level walking circuit.Be to adopt anti-phase beginning pulse in this example, but also can be with other low logic amplitude signal.This low voltage signal generator shown in Figure 11 promptly reduces level shift circuit and only is made of the N transistor npn npn, can certainly only constitute by the P transistor npn npn or by the CMOS that adopts N transistor npn npn and P transistor npn npn.
Figure 19 shows that low voltage signal generator shown in Figure 11 is the sequential chart of reduced voltage level walking circuit.Anti-phase beginning pulse signal spb is that noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) the pulse of Vss.In addition, because input is that frequency is carried out output after the logical operation of 2 frequency divisions, therefore has noble potential and is Vdd, electronegative potential and be 12V (=Vdd-Vss) the amplitude of Vss.Utilize this high logic amplitude signal to carry out Push And Release, the generation noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) the clock signal of Vss.
Figure 12 shows that the adoptable low voltage signal generator of the present invention promptly reduces the example of the circuit diagram of level shift circuit.This reduced voltage level walking circuit is made of 2 transistors and 1 phase inverter, high logic amplitude clock signal is connected with described transistorized grid as input (INPUT), and the high level that low logic amplitude signal promptly begins pulse signal sp or low logic amplitude is power supply potential Vhh and state transistorized source electrode and be connected.Beginning pulse signal sp is electronegative potential Vss in the almost whole period of 1 gated sweep time.Here, therefore Vhh is 3V under the situation of Fig. 1 owing to be the output of external control circuit 25.Owing to utilize the high logical signal of 12V to come the Push And Release of oxide-semiconductor control transistors, therefore make the electronegative potential Vss of the beginning pulse signal sp that is connected with source electrode or the noble potential Vhh of the low logic amplitude that is connected with source electrode passes through.
Be to adopt the beginning pulse in this example, but also can adopt other low logic amplitude signal.This low voltage signal generator shown in Figure 12 is that the reduced voltage level walking circuit only is made of the N transistor npn npn, can certainly only constitute by the P transistor npn npn or by the CMOS that adopts N transistor npn npn and P transistor npn npn.
Figure 20 is that expression low voltage signal generator shown in Figure 12 is the sequential chart of reduced voltage level walking circuit.Beginning pulse signal sp is that noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) the pulse of Vss.In addition, because input is that frequency is carried out output after the logical operation of 2 frequency divisions, therefore has noble potential and is Vdd, electronegative potential and be 12V (=Vdd-Vss) the amplitude of Vss.Utilize high logic amplitude signal to carry out Push And Release, the generation noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) the clock signal of Vss.
Figure 13 shows that the adoptable low voltage signal generator of the present invention promptly reduces the example of the circuit diagram of level shift circuit.This reduced voltage level walking circuit is made of 2 transistors and 1 phase inverter, high logic amplitude clock signal is connected with described transistorized grid as input (INPUT), and the high level of low logic amplitude is that the low level of power supply potential Vhh or high logic amplitude and low logic amplitude is that power supply potential Vss is connected with described transistorized source electrode.The electronegative potential Vss of the noble potential Vhh of low logic amplitude or high logic amplitude and low logic amplitude externally control circuit 25 generates, Vhh is 3V under the situation of earlier figures 1, owing to utilize the high logic amplitude signal of 12V to come the Push And Release of oxide-semiconductor control transistors, the noble potential Vhh of the low logic amplitude that is connected with source electrode or the electronegative potential Vss of high logic amplitude and low logic amplitude passed through.
This low voltage signal generator shown in Figure 13 is that the reduced voltage level walking circuit only is made of the N transistor npn npn, can certainly only constitute by the P transistor npn npn or by the CMOS that adopts N transistor npn npn and P transistor npn npn.
Shown in Figure 21 is that low voltage signal generator shown in Figure 13 is the sequential chart of reduced voltage level walking circuit.Because the noble potential of low logic amplitude is Vhh, the electronegative potential of high logic amplitude and low logic amplitude is Vss, thus potential difference (PD) be 3V (=Vhh-Vss).In addition, because input is that frequency is carried out output after the logical operation of 2 frequency divisions, therefore has noble potential and is Vdd, electronegative potential and be 12V (=Vdd-Vss) the amplitude of Vss.Utilize this high logic amplitude signal to carry out Push And Release, the generation noble potential is that Vhh, electronegative potential are 3V (=Vhh-Vss) the clock signal of Vss.
By Fig. 6～low voltage signal generator shown in Figure 13 is that the reduced voltage level walking circuit is an example, also can be other formations of utilizing the low logic amplitude signal of high logic amplitude signal output.
Utilize this example, because LCD panel realizes the low-voltage input, making the clock signal by data signal wire driving circuit simultaneously is low-voltage, therefore can realize low consumpting power.For example in this example, owing to voltage can be reduced to 3V from 12V, so the consumed power of clock cable can be reduced to 1/16 significantly.Also have,, therefore can also reduce unwanted radiation because voltage is reduced.
This example is not only applicable to the data signal wire driving circuit of liquid crystal indicator, can also be applicable to scan signal line drive circuit.Can also be used for organic EL (Electro Luminescence, electroluminescence) in addition and (OLED) wait other display device.
This example is a concrete example.Shown in Figure 22 is general situation.By needs high logic shake the spoke signal logical operation circuit 31 and logical operation circuit 35 and between them, have in the circuit that the transmission system 33 of load capacitance constitutes, between logical operation circuit 31 and transmission system 33, be provided with from high logic amplitude signal and be transformed to the shake reduced voltage level walking circuit 32 of spoke signal of low logic, between transmission system 33 and logical operation circuit 35, setting is from hanging down the boost level walking circuit 34 that the logic amplitude signal is transformed to high logic amplitude signal, forming circuit like this.Like this, the consumed power of the load capacitance wiring that is directly proportional with voltage squared can be reduced significantly, unwanted radiation can be reduced simultaneously.
Circuit shown in Figure 22 not only can be used for LCD device, can also be used for organic EL (OLED) and wait other active matrix type displays.
[example 2]
According to Fig. 2 and Figure 23 another example of the present invention is described below.In addition, for convenience of description for the purpose of, the part additional phase that has an identical function with the member shown in the drawings of aforementioned example with symbol, and omit its explanation.
The present invention can be widely used in adopting the circuit of polysilicon, describes as the situation of its desirable example to the image display device that is used for single phase clock signal input below.
In order to drive, as shown in figure 30, to need clock signal and the inversion clock signal of complementary relationship is arranged with it the shift register of general d type flip flop as inscape.Shown in Figure 23 for the overall construction drawing of primary image display device be data signal wire driving circuit among Fig. 2.That is to say that image display device 40 generates the logical operation circuit 41 of inversion clock signal and constitutes having at the shift register 46 of decentralized configuration level shift circuits at different levels and the data signal wire driving circuit 42 of sample circuit 47 by accepting clock signal from external control circuit 25.Display part and scan signal line drive circuit in the diagram of Figure 23, have been omitted.
When reducing worker and reduce wiring capacitance, above-mentioned logical operation circuit 41, data signal wire driving circuit 42, not shown display part and scan signal line drive circuit are arranged on the same substrate.In addition, for integrated more pixel, enlarge display area, above-mentioned each driving circuit and logical circuit are made of the polycrystalline SiTFT that forms on the glass substrate.Have, even adopt common glass substrate (strain point is at the glass substrate below 600 ℃), in order not produce warpage in response to the technology more than the height, above-mentioned polysilicon transistors will be made under the technological temperature below 600 ℃ again.
Because the foregoing circuit that polycrystalline SiTFT forms, its driving voltage Vdd is set at for example about 12V.In addition, in Fig. 2, control circuit 25 is to form with the single crystal silicon pipe on the substrate different with above-mentioned each circuit 22～24 and 26, and driving voltage Vhh for example is set at 3V or below the 3V, is the value of the driving voltage Vdd that is lower than above-mentioned polysilicon circuit.
The following describes working condition, from the data signal wire driving circuit of external control circuit 25 with beginning pulse signal sp and anti-phase beginning pulse signal spb with complementary relationship, utilize boost level walking circuit 43b to boost to 12V, input to shift register 46.In addition, by the 3V clock signal ck that control circuit 25 generates, utilize the level shift circuit 43a in the LCD panel 40 to boost to 12V.The signal that boosts utilizes phase inverter 44, generates the 12V inversion clock signal CKB with complementary relationship.Inversion clock signal CKB is by being used to from the data signal wire driving circuit of external control circuit 25 to be depressurized to 3V from 12V with beginning pulse signal sp and have the reduced voltage level walking circuit 45 of the anti-phase beginning pulse signal spb control of complementary relationship.The clock signal ck that should hang down logic amplitude inversion clock signal ckb and not utilize boost level walking circuit 43a to boost transmits in data signal wire driving circuit 42, boosting shift register at different levels, to move needed high logic amplitude for logical operation be 12V again, is used for the pulse displacement.Then, generate sampling pulse, take a sample, output to each data signal line (not shown in Figure 23), show at 47 pairs of data-signals of sample circuit.
Adopt this example,, therefore do not need to reduce the number of terminals of interface from the outside input because the inversion clock signal generates in LCD panel.
The used low voltage signal generator of this example is the reduced voltage level walking circuit, is Fig. 6～circuit shown in Figure 13, but also can be other formations of utilizing the low logic amplitude signal of high logic amplitude signal output.About low voltage signal generator is the work of reduced voltage level walking circuit, identical with example 1 explanation.
Adopt the present invention, because LCD panel realizes the low-voltage input, making the clock signal by data signal wire driving circuit simultaneously is low-voltage, therefore can realize low power consumption.For example in this example, owing to voltage can be reduced to 3V from 12V, so the consumed power of clock cable can be reduced to 1/16 significantly.Also have,, therefore can also reduce unwanted radiation because voltage is reduced.
The present invention is not only applicable to the data signal wire driving circuit of liquid crystal indicator, can also be used for scan line drive circuit.Can also be used for organic EL (OLED) in addition and wait other display device.
[example 3]
According to Fig. 2 and Figure 24 another other examples of the present invention are described below.In addition, for convenience of description for the purpose of, the member additional phase that has an identical function with the member shown in the drawings of aforementioned example with symbol, and omit its explanation.
The present invention can be widely used in adopting the logical circuit of polysilicon, below as its desirable example, the situation of the image display device that is applicable to the numeral input is described.
Shown in Figure 24 is data signal wire driving circuit in the primary image display device, just the data number of it is believed that line drive circuit 50 acceptance of image display device are from the clock signal ck of external circuit, inversion clock signal ckb, beginning pulse sp, control signals such as anti-phase beginning pulse spb and digital data input signal (digital input) and move, constitute by the shift register 51 of decentralized configuration level shift circuit and the sample circuit 56 that data are taken a sample, described shift register is to make high-frequency signal reduce to 1/6 frequency and D/A (below be called the DA converter) is controlled the shift register of usefulness, it is shift register 51 to the decentralized configuration level shift circuit, 66 phase DA converters 52 that carry out the DA conversion simultaneously, low logic amplitude signal is transformed to the boost level walking circuit 53 of high logic amplitude signal, high logic amplitude signal is transformed to the reduced voltage level walking circuit 54a and the 54b of low logic amplitude signal, and sample circuit 56 controlled the shift register of usefulness, in the diagram of Figure 24, omitted display part and scan signal line drive circuit.
When reducing worker and reduce wiring capacitance, above-mentioned data signal wire driving circuit 50, not shown display part and scan signal line drive circuit are arranged on the same substrate.In addition, for integrated more pixel, enlarge display area, above-mentioned each driving circuit and logical operation circuit are made of the polycrystalline SiTFT that forms on the glass substrate.Also have, even adopt common glass substrate (strain point is at the glass substrate below 600 ℃), in order not produce warpage or bending in response to the technology more than the height, above-mentioned polysilicon transistors will be made under the technological temperature below 600 ℃.
By the foregoing circuit that polycrystalline SiTFT forms, its driving voltage Vdd is set at for example about 12V.In addition, control circuit 25 (with reference to Fig. 2) is to form with the single crystal silicon pipe on the substrate different with data signal wire driving circuit, display part and scan signal line drive circuit, driving voltage Vhh for example is set at 3V or below the 3V, is the value of the driving voltage Vdd that is lower than above-mentioned polysilicon circuit.
The following describes working condition, the beginning pulse signal sp and the anti-phase beginning pulse signal spb that will be 3V from the low logic amplitude of external control circuit 25 input to boost level walking circuit 53, the beginning pulse signal SP that to generate high logic amplitude signal be 12V.The beginning pulse signal SP of this 12V, be input to shift register 51 at configuration level shift circuits at different levels from the low logic amplitude of the external control circuit 25 clock signal ck that is 3V and inversion clock signal ckb.Utilize beginning arteries and veins station signal SP that shift register 51 is started working.Clock signal ck and inversion clock signal ckb as low logic amplitude signal boost to 12V with level shift circuit at different levels, are used to drive shift register.Shift register is worked with 3MHz, but for export again 6 numerical datas are once carried out DA conversion (D/A switch) usefulness with 6 DA converters 52 signal as clock signal, be 500KHz with frequency transformation.The clock signal C K of this high logic amplitude 12V and inversion clock signal CKB, the beginning pulse signal sp by utilizing low logic amplitude 3V and the formation low-voltage clock-signal generator of anti-phase beginning pulse signal spb control are reduced voltage level walking circuit 54a and 54b, generate clock signal ck and the inversion clock signal ckb of low logic amplitude 3V.Utilize these low logics shake spoke clock signal ck and inversion clock signal ckb and be transformed to the shake beginning pulse signal SP of spoke 12V signal of high logic, make shift register 55 work at configuration boost level walking circuits at different levels with boost level walking circuit 53.According to sequential, with utilizing the aanalogvoltage of 6 phase DA converters, 52 conversion to export to data signal line (not shown), to show with sample circuit 56 by shift register 55 decisions.
The direct ratio ground that is routed to of the clock cable in the shift register 55 and the sum of series of shift register and the roughly the same length of shift register forms load capacitance, produce power consumption thus, but transmit because the clock signal utilization that is shift register 51 of high logic amplitude is transformed to low logic amplitude signal as the reduced voltage level walking circuit 54a of low-voltage clock-signal generator and 54b, therefore can realize low-power signal.For example in this example, owing to voltage can be reduced to 3V from 12V, so the consumed power of clock cable can be reduced to 1/16 significantly.Also have,, therefore can also reduce unwanted radiation because voltage is reduced.
The used low voltage signal generator of the present invention is the reduced voltage level walking circuit, is Fig. 6～circuit shown in Figure 13, but also can be other formations of utilizing the low logic amplitude signal of high logic amplitude signal output.About low voltage signal generator is the work of reduced voltage level walking circuit, identical with example 1 explanation.
The present invention not only can be used for liquid crystal indicator, can also be used for organic EL (OLED) and wait other active matrix type display.
Be described in detail as top institute, adopt the present invention, to shake the signal that transmits on the load capacitance circuit that a plurality of logical operation portion of spoke signal connected to the high logic of needs as the low logic spoke signal that shakes, and can reduce power consumption significantly and reduce the unwanted width of cloth and penetrate with this.
[example 4]
According to Figure 25～Figure 27 another example of the present invention is described below.Shown in Figure 25 is the structure diagram of the signal processing circuit of this example.
Signal processing circuit 60 be have the 1st logical operation circuit 61 with the work of high logic amplitude signal, be the signal processing circuit of transmission system 63 with amplitude less than the 2nd logical operation circuit 64 and the load capacitance between them of the low logic amplitude signal work of this high logic amplitude signal, in this signal processing circuit, employing is between the 1st logical operation circuit 61 and transmission system 63, and being provided with high logic amplitude signal is transformed to the reduced voltage level walking circuit that hangs down the logic amplitude signal is the circuit structure of low voltage signal generator 62.
Generally speaking, the supply voltage of circuit is high more, and this circuit more can high speed motion.About this point, the circular type shaker that will frequently use in order to confirm transistorized performance describes with reference to Figure 26 and Figure 27 as the example of circuit.
As shown in figure 26, circular type shaker 70 is by the phase inverter 71 of odd level ... constitute, form the structure of the output of afterbody phase inverter 71 being imported the 1st grade of phase inverter 71.Phase inverter 71 is that the high level signal input is transformed to low level signal output, or the low level signal input is transformed to the circuit of high level signal output.Thereby, by odd level phase inverter 71 ... the circular type shaker 70 that constitutes can vibrate.Transistorized performance is good more, and circular type shaker 70 more can be with the high frequency starting of oscillation.
Shown in Figure 27 is the oscillation frequency of circular type shaker 70 and the relation of supply voltage.Circular type shaker 70 used herein is by 19 grades of phase inverters 71 ... constitute, it is that 6 μ m, the wide W of raceway groove are 8 μ m that each phase inverter 71 adopts the long L of raceway groove of n transistor npn npn, and the long L of the raceway groove of p transistor npn npn is that 6 μ m, the wide W of raceway groove are the polysilicon transistors of 6 μ m.
Just be appreciated that increase along with supply voltage VDD, the oscillation frequency f of circular type shaker with reference to Figure 27 OscIncrease.For example, when supply voltage VDD is 4V, oscillation frequency f OscBe about 1.5MHz, and supply voltage VDD is when being 12V, oscillation frequency f OscBe about 12MHz.
That is to say, need only circuit, can reduce supply voltage with low-speed processing.Therefore, the 2nd logical operation circuit 64 shown in Figure 25 if processing speed can be lower than the speed of the 1st logical operation circuit 61, then can drive with low logic amplitude signal.
At this moment, for transmission system 63, owing to utilize reduced voltage level walking circuit 62 with low logic amplitude signal transmission, therefore between transmission system 63 and the 2nd logical operation circuit 64, do not need to be provided with and shown in Figure 22 will hang down the boost level walking circuit 34 that the logic amplitude signal is transformed to high logic amplitude signal, can suppress the increase of circuit scale like this.
Again, with reference to Figure 22 and Figure 25, because no matter the 2nd logical operation circuit 35 and 64 is with the work of high logic amplitude signal, still with low logic amplitude signal work, in transmission system 63 is to utilize the low logic amplitude signal of reduced voltage level walking circuit 62 transmission, therefore can reduce the consumed power of the load capacitance wiring that is directly proportional with voltage squared significantly, can reduce the unwanted width of cloth simultaneously and penetrate.
In addition, this example can be widely used in adopting the circuit of monocrystalline silicon or polysilicon.Also have, this example not only can be used for liquid crystal indicator, can also be used for organic EL (OLED) and wait other active matrix type displays.
As mentioned above, signal processing circuit of the present invention is that low voltage signal generator constitutes by adopting high logic amplitude signal to carry out the 1st logical operation circuit of logical operation, the transmission system with load capacitance and reduced voltage level walking circuit, described reduced voltage level walking circuit is to import high logic amplitude signal from the 1st logical operation circuit, the high logic amplitude signal of input is transformed to the low logic amplitude signal of amplitude less than this high logic amplitude signal, and the low logic amplitude signal of conversion is exported to the circuit of above-mentioned transmission system.
Like this, at the 1st logical operation circuit, adopt high logic amplitude signal, can not cause misoperation, can high-speed computation, simultaneously in transmission system as load capacitance, adopt low logic amplitude signal, can be with the output signal of low consumpting power transmission from the 1st logical operation circuit.Therefore have such effect, promptly in formation, can suppress the increase of consumed power, suppress the unwanted width of cloth and penetrate with the logical operation portion that needs high logic amplitude signal.
In addition, as the 2nd logical operation circuit that is connected with above-mentioned transmission system, can be the circuit that adopts above-mentioned low logic amplitude signal to carry out logical operation, also can be the circuit that adopts high logic amplitude signal to carry out logical operation.For example the logical operation circuit that is made of polysilicon system silicon thin film transistor if need carry out high speed processing, then must drive with high logic amplitude signal, gets final product and carry out low-speed processing, then can drive with low logic amplitude signal.In the above-described configuration, because the reduced voltage level walking circuit is set between the 1st logical operation circuit and transmission system, therefore and the situation that the reduced voltage level walking circuit is set between transmission system and the 2nd logical operation circuit compare, have and can suppress consumed power and increase and suppress the effect that the unwanted width of cloth is penetrated.
At the 2nd logical operation circuit is when adopting high logic amplitude signal to carry out the circuit of logical operation, between above-mentioned transmission system and the 2nd logical operation circuit, outfit will be transformed to the boost level walking circuit of exporting to the 2nd logical operation circuit behind the high logic amplitude signal of amplitude greater than this low logic amplitude signal from the low logic amplitude signal of above-mentioned transmission system input.The effect that obtains like this is, even adopt high logic amplitude signal at the 2nd logical operation circuit, also can not cause misoperation, can carry out high-speed computation.In addition, the used high logic amplitude signal of the 1st logical operation circuit with at the used high logic amplitude signal of the 2nd logical operation circuit, can same-amplitude, also can various amplitude.
In addition, be when adopting low logic amplitude signal to carry out the circuit of logical operation at the 2nd logical operation circuit, owing between transmission system and the 2nd logical operation circuit, do not need to be provided with the boost level walking circuit, therefore have and suppress the effect that circuit scale increases.
In addition, signal processing circuit of the present invention, as mentioned above, at least one computing circuit of the 1st logical operation circuit and the 2nd logical operation circuit is made of polysilicon system silicon thin film transistor in the above-described configuration.
Adopt said structure, at least one computing circuit of the 1st logical operation circuit and the 2nd logical operation circuit is made of polysilicon system silicon thin film transistor.Therefore except the effect that said structure produces, also has the effect that can adapt to late-class circuit more neatly.
In addition, low voltage signal generator of the present invention, as mentioned above, be to possess the low voltage signal generator that is provided with in the signal processing circuit of the transmission system that adopts high logic amplitude signal to carry out the 1st logical operation circuit of logical operation and load capacitance is arranged, have high logic amplitude signal is transformed to the structure of amplitude less than the low logic amplitude signal of this high logic amplitude signal.Above-mentioned low voltage signal generator is preferably disposed between the outgoing side and above-mentioned transmission system of the 1st logical operation circuit.
Adopt above-mentioned formation, as mentioned above, at the 1st logical operation circuit, adopt high logic amplitude signal, can not cause misoperation, can high-speed computation, simultaneously in transmission system as load capacitance, adopt low logic amplitude signal, can be with the output signal of low power consumption transmission from the 1st logical operation circuit.Therefore have such effect, promptly in structure, can suppress the increase of consumed power, suppress the unwanted width of cloth and penetrate with the logical operation portion that needs high logic amplitude signal.
That is to say, it is the low voltage signal generator that is provided with in the signal processing circuit of wishing with the logical operation portion of the high logic amplitude signal of needs and in order to reduce consumed power to be combined with the above-mentioned transmission system of hanging down the logic amplitude signal, its effect is that can provide and can generate the reduced voltage level walking circuit that hangs down the logic amplitude signal from high logic amplitude signal is low voltage signal generator.
In addition, low voltage signal generator of the present invention is to constitute like this, promptly as mentioned above, have a plurality of transistors that constitute gate circuit in the above-described configuration, this transistor is made of with transistor with transistor and the output of one or more high level one or more low level outputs, above-mentioned low level output transistor, the above-mentioned high logic amplitude signal of input on its grid, during being transfused to, above-mentioned high logic amplitude signal is the low logic amplitude signal of low level current potential in its input side input, generate the low level current potential of the low level power of above-mentioned low logic amplitude signal, and generate some signals in the low level current potential of high level power supply of above-mentioned high logic amplitude signal, from the low level current potential of its outgoing side output as low logic amplitude signal, above-mentioned high level output transistor, the above-mentioned high logic amplitude signal of input on its grid, during being transfused to, above-mentioned high logic amplitude signal is the low logic amplitude signal of high level current potential in its input side input, and the some signals in the high level current potential of above-mentioned low level power, from the high level current potential of its outgoing side output as low logic amplitude signal.
Adopt above-mentioned formation, utilize above-mentioned high logic amplitude signal to make above-mentioned grid circuit Push And Release, from the low logic amplitude signal of above-mentioned each transistor output.Therefore, except the effect that above-mentioned formation produces, also has the effect that can realize above-mentioned low voltage signal generator with simple structure.
In addition, the structure of low voltage signal generator of the present invention as mentioned above, be in the above-described configuration, above-mentioned signal processing circuit is used to have a plurality of pixels of rectangular configuration, many data signal lines that are provided with at each row of above-mentioned a plurality of pixels, each capable multi-strip scanning signal wire that is provided with in above-mentioned a plurality of pixels, drive the data signal wire driving circuit of above-mentioned many data signal lines, and the image display device that drives the scan signal line drive circuit of above-mentioned multi-strip scanning signal wire, the low logic amplitude signal of low level current potential during above-mentioned high logic amplitude signal is transfused to, be to represent that the work of above-mentioned data signal wire driving circuit begins the beginning pulse signal in period, the inversion signal that the low logic amplitude signal of high level current potential is above-mentioned beginning pulse signal during above-mentioned high logic amplitude signal is transfused to.
Adopt above-mentioned formation, utilize above-mentioned high logic amplitude signal to make above-mentioned grid circuit Push And Release, from the low logic amplitude signal of above-mentioned transistor output.Therefore, except the effect that above-mentioned formation produces, also has the effect that can realize above-mentioned low voltage signal generator with simple structure.
In addition, the structure of low voltage signal generator of the present invention is except above-mentioned formation as mentioned above, and above-mentioned a plurality of transistors are also exported the structure of above-mentioned low logic amplitude signal and inversion signal thereof respectively.
Adopt above-mentioned formation, export above-mentioned low logic amplitude signal and inversion signal thereof.Therefore, except the effect that above-mentioned formation produces, also has the more effect of flexible adaptation late-class circuit.
In addition, low voltage signal generator of the present invention as mentioned above, except above-mentioned formation, is that the silicon thin film transistor of polysilicon system constitutes.
Adopt above-mentioned formation, at least one computing circuit or the above-mentioned low voltage signal generator of above-mentioned the 1st logical operation circuit and the 2nd logical operation circuit are made of polysilicon system silicon thin film transistor.Therefore, except the effect that above-mentioned formation produces, also has the more effect of flexible adaptation late-class circuit.
In addition, image display device of the present invention, as mentioned above, be a plurality of pixels with rectangular configuration, many data signal lines that are provided with at each row of above-mentioned a plurality of pixels, each capable multi-strip scanning signal wire that is provided with in above-mentioned a plurality of pixels, drive the data signal wire driving circuit of above-mentioned many data signal lines, and the image display device that drives the scan signal line drive circuit of above-mentioned multi-strip scanning signal wire, in above-mentioned image display device, some driving circuits of above-mentioned data signal wire driving circuit and said scanning signals line drive circuit or two driving circuits have the 1st logical operation circuit that adopts high logic amplitude signal to carry out logical operation, the transmission system that load capacitance is arranged, and the reduced voltage level walking circuit is a low voltage signal generator, described reduced voltage level walking circuit is imported high logic amplitude signal from the 1st logical operation circuit, the high logic amplitude signal of input is transformed to the low logic amplitude signal of amplitude less than this high logic amplitude signal, and the low logic amplitude signal of conversion is exported to above-mentioned transmission system.
Like this, the effect that has is, in for example circuit with the input clock signal frequency division as the 1st logical operation circuit, adopt high logic amplitude signal, can not cause misoperation ground high-speed computation, in having the transmission system of load capacitance, adopt low logic amplitude signal simultaneously, can transmit the output signal of the 1st logical operation circuit with low consumpting power.Therefore, in image display device, has the effect that can realize high speed logic computing and low consumpting power simultaneously.
In addition, as the 2nd logical operation circuit that is connected with above-mentioned transmission system, can be the circuit that adopts above-mentioned low logic amplitude signal to carry out logical operation, also can be the circuit that adopts high logic amplitude signal to carry out logical operation.In the above-described configuration, because the reduced voltage level walking circuit is set between the 1st logical operation circuit and transmission system, therefore and the situation that the reduced voltage level walking circuit is set between transmission system and the 2nd logical operation circuit compare, have the increase that can suppress consumed power and suppress the effect that the unwanted width of cloth is penetrated.
At the 2nd logical operation circuit is when adopting high logic amplitude signal to carry out the circuit of logical operation, between above-mentioned transmission system and the 2nd logical operation circuit, outfit will be transformed to the boost level walking circuit of exporting to the 2nd logical operation circuit behind the high logic amplitude signal of amplitude greater than this low logic amplitude signal from the low logic amplitude signal of above-mentioned transmission system input.Doing the effect that obtains like this is, even at for example shift register as the 2nd logical operation circuit, also can adopt high logic amplitude signal and can not cause that misoperation ground carries out high-speed computation.In addition, the used high logic amplitude signal of the 1st logical operation circuit with at the used high logic amplitude signal of the 2nd logical operation circuit, can same-amplitude, also can various amplitude.
In addition, at the 2nd logical operation circuit is when adopting low logic amplitude signal to carry out the circuit of logical operation, owing between transmission system and the 2nd logical operation circuit, do not need to be provided with the boost level walking circuit, therefore have and to suppress the effect that circuit scale increases.
In addition, the formation of image display device of the present invention is, as mentioned above, except above-mentioned formation, the 1st logical operation circuit is the clock signal frequency dividing circuit with the clock signal frequency division, the 2nd logical operation circuit is the circuit of a plurality of shift register concatenation, connects above-mentioned boost level walking circuit on each shift register.
Adopt said structure, as the reduced voltage level walking circuit of above-mentioned low voltage signal generator output buck with above-mentioned clock signal frequency dividing circuit.Therefore, except the effect that above-mentioned formation produces, also has the effect that can realize above-mentioned image display device with simple formation.
In addition, the formation of image display device of the present invention is, as mentioned above, except above-mentioned formation, the 1st logical operation circuit is the inversion clock signal circuit that generates the inversion clock signal from clock signal, the 2nd logical operation circuit is the circuit of a plurality of shift register concatenation, connects above-mentioned boost level walking circuit on each shift register.
Adopt above-mentioned formation, as the reduced voltage level walking circuit of above-mentioned low voltage signal generator with above-mentioned inversion clock signal circuit generate anti-phase to the clock signal step-down.Therefore, except the effect that above-mentioned formation produces, also has the effect that can realize above-mentioned image display device with simple formation.
In addition, the formation of image display device of the present invention is, as mentioned above, except above-mentioned formation, above-mentioned data signal wire driving circuit also has the reduced voltage level walking circuit as above-mentioned low voltage signal generator, the 1st logical operation circuit is the circuit of a plurality of shift register concatenation, it is i.e. the 1st shift-register circuit of circuit that determines the sequential of taking a sample to digital data, the 2nd logical operation circuit is the circuit of a plurality of shift register concatenation, is i.e. the 2nd shift register circuit of circuit of the decision sequential of exporting to above-mentioned data signal line.
Adopt above-mentioned formation, as the reduced voltage level walking circuit of above-mentioned low voltage signal generator output buck with above-mentioned the 1st shift register.Therefore, except the effect that above-mentioned formation produces, also has the effect that can realize above-mentioned image display device with simple structure.
In addition, image display device of the present invention, as mentioned above, in the above-described configuration, at least the 1 logical operation circuit is made of polysilicon system silicon thin film transistor.
Adopt above-mentioned formation, at least the 1 logical operation circuit is made of polysilicon system silicon thin film transistor.Therefore, except the effect that above-mentioned formation produces, also has the effect that can adapt to late-class circuit more neatly.
In addition, signal processing circuit of the present invention also can constitute like this, promptly possessing the device that comprises a plurality of logical operation portions and comprise the transmission system of load, promptly in the circuit that constitutes by the logical operation circuit 1 of the high logic amplitude signal of needs and logical operation circuit 2 and the load capacitance between them, the reduced voltage level walking circuit that is transformed to low logic amplitude signal from high logic amplitude signal is set between logical operation circuit 1 and load capacitance, the boost level walking circuit that is transformed to high logic amplitude signal from low logic amplitude signal is set between load capacitance and logical operation circuit 2.
In addition, low voltage signal generator of the present invention also can constitute like this, promptly has the reduced voltage level walking circuit that it is characterized in that being transformed to from high logic amplitude signal low logic amplitude signal in this circuit constitutes.
In addition, signal processing circuit of the present invention also can constitute like this, promptly in the above-described configuration, high logic amplitude signal is connected with the transistor gate that constitutes by door, source electrode is connected with the high level power supply potential of low logic amplitude signal or low logic amplitude signal or the low level power current potential of high logic amplitude signal and low logic amplitude signal, generates the output of low logic amplitude signal.
In addition, signal processing circuit of the present invention also can constitute like this, and promptly in the above-described configuration, the low logic amplitude signal that is connected with transistorized source electrode is beginning pulse signal or anti-phase beginning pulse signal.
In addition, signal processing circuit of the present invention also can constitute like this, and promptly in the above-described configuration, the low logic amplitude signal that is connected with transistorized source electrode is the low level power current potential of anti-phase beginning pulse signal or high logic amplitude signal and low logic amplitude signal.
In addition, signal processing circuit of the present invention also can constitute like this, and promptly in the above-described configuration, the low logic amplitude signal that is connected with transistorized source electrode is the high level power supply potential of beginning pulse signal or low logic amplitude signal.
In addition, signal processing circuit of the present invention also can constitute like this, and promptly in the above-described configuration, what be connected with transistorized source electrode is the high level power supply potential of low logic amplitude signal or the low level of low logic amplitude signal.
In addition, signal processing circuit of the present invention also can constitute like this, promptly in the above-described configuration, high logic amplitude signal is connected with the transistor gate that constitutes by door, source electrode is connected with the high level power supply potential of low logic amplitude signal or low logic amplitude signal or the low level power current potential of high logic amplitude signal and low logic amplitude signal, generates the output and the anti-phase output of low logic amplitude signal.
In addition, signal processing circuit of the present invention also can constitute like this, and promptly in the above-described configuration, some circuit of these logical operation circuits are made by polysilicon.
Like this, the consumed power of the load capacitance of minimizing and voltage squared or direct ratio wiring can reduce the unwanted width of cloth simultaneously and penetrate significantly.
In addition, image display device of the present invention also can constitute like this, be a plurality of pixels of described image display device with rectangular configuration, at many data signal lines of each row configuration of above-mentioned each pixel, at multi-strip scanning signal wire, scan signal line drive circuit and the data signal wire driving circuit of each row configuration of above-mentioned each pixel, described scan signal line drive circuit with the sweep signal of mutual different sequential and the 1st clock signal of predesignating the cycle is synchronously supplied with above-mentioned each scan signal line successively; Described data signal wire driving circuit is from synchronously supplying with successively with the 2nd clock signal of predesignating the cycle, and represent the picture signal of the show state of above-mentioned each pixel, each pixel decimation data-signal to the scan signal line of supplying with said scanning signals, export to above-mentioned each data signal line then, in described image display device, have the signal processing circuit and the reduced voltage level walking circuit that constitute as mentioned above.
In addition, image display device of the present invention also can constitute like this, promptly in the above-described configuration, have the level shift circuit that input clock signal is boosted, connected clock signal frequency dividing circuit, with the level shift circuit of above-mentioned frequency dividing circuit output buck, at a plurality of shift registers with boost level walking circuit at different levels and control the data signal wire driving circuit that constitutes by sample circuit to the output of data signal line.Like this, can reduce the consumed power of load capacitance wiring significantly, can reduce the unwanted width of cloth simultaneously and penetrate.
In addition, image display device of the present invention also can constitute like this, promptly in the above-described configuration, have the circuit that generates the inversion clock signal after the clock signal accepted, with the level shift circuit of above-mentioned inversion clock signal step-down, at the shift registers with boost level walking circuit at different levels and control the data signal wire driving circuit that constitutes by sample circuit to the output of data signal line.Like this, the consumed power of load capacitance wiring can be reduced significantly, unwanted radiation can be reduced simultaneously.
In addition, image display device of the present invention also can constitute like this, promptly in the above-described configuration, have sequential that decision obtains numerical data and the 1st shift registers with boost level walking circuit at different levels, will above-mentioned the 1st shift register level shift circuit, digital analog converter, the decision of output buck export to the sequential of data signal line and have the 2nd shift register of boost level walking circuit and control the data signal wire driving circuit that constitutes by sample circuit the output of data signal line at different levels.Like this, can reduce the consumed power of load capacitance wiring significantly, can reduce the unwanted width of cloth simultaneously and penetrate.
In addition, image display device of the present invention also can constitute like this, promptly in the above-described configuration, have by the level shift circuit that input clock signal is boosted, connected clock signal frequency dividing circuit, with the level shift circuit of the output buck of above-mentioned frequency dividing circuit and the scan signal line drive circuit that constitutes at a plurality of shift registers with boost level walking circuit at different levels.Like this, the consumed power of load capacitance wiring can be reduced significantly, unwanted radiation can be reduced simultaneously.
In addition, image display device of the present invention also can constitute like this, promptly in the above-described configuration, have by accept to generate the circuit of inversion clock signal after the clock signal, with the level shift circuit of above-mentioned inversion clock signal step-down and the scan signal line drive circuit that constitutes at the shift registers with boost level walking circuit at different levels.Like this, can reduce the consumed power of load capacitance wiring significantly, can reduce the unwanted width of cloth simultaneously and penetrate.
The concrete example or the embodiment that in detailed description of the invention, adopt, all the time just in order to illustrate technology contents of the present invention, should narrow definition be not only to be defined in such object lesson, in the scope of spirit of the present invention and following Patent right requirement item, can carry out various changes.

Claims (18)

1. a signal processing circuit is characterized in that having
Adopt high logic amplitude signal carry out logical operation the 1st logical operation circuit (31,61),
Have load capacitance transmission system (33,63) and
The reduced voltage level walking circuit is low voltage signal generator (32,62),
Described reduced voltage level walking circuit is from the high logic amplitude signal of the 1st logical operation circuit (31,61) input, the high logic amplitude signal of input is transformed to the low logic amplitude signal of amplitude less than this high logic amplitude signal, and the low logic amplitude signal of conversion is exported to described transmission system (33,63).
2. signal processing circuit as claimed in claim 1 is characterized in that, the silicon thin film transistor that at least the 1 logical operation circuit (31,61) is made by polysilicon constitutes.
3. signal processing circuit as claimed in claim 1, it is characterized in that, also have with described transmission system (33,63) and be connected, and the 2nd logical operation circuit (64) that adopts the described low logic amplitude signal imported by described transmission system (33,63) by described reduced voltage level walking circuit (32,62) to carry out logical operation.
4. signal processing circuit as claimed in claim 1 is characterized in that also having
To be transformed to from the low logic amplitude signal of described transmission system (33,63) input the boost level walking circuit (34) exported behind the high logic amplitude signal of amplitude greater than this low logic amplitude signal and
The 2nd logical operation circuit (35) that the high logic amplitude signal that employing is imported from this boost level walking circuit (34) carries out logical operation.
5. signal processing circuit as claimed in claim 4 is characterized in that, the silicon thin film transistor that at least the 2 logical operation circuit (35) is made by polysilicon constitutes.
6. a low voltage signal generator that is provided with in the signal processing circuit that possesses the transmission system (33,63) that adopts high logic amplitude signal to carry out the 1st logical operation circuit (31,61) of logical operation and have load capacitance is characterized in that,
High logic amplitude signal is transformed to the low logic amplitude signal of amplitude less than this high logic amplitude signal.
7. low voltage signal generator as claimed in claim 6 is characterized in that, described low voltage signal generator is arranged between the outgoing side and described transmission system (33,63) of the 1st logical operation circuit (31,61).
8. low voltage signal generator as claimed in claim 6 is characterized in that,
Have a plurality of transistors that constitute gate circuit, this transistor is made of with transistor with transistor and the output of one or more high level one or more low level outputs,
Described low level output transistor, import described high logic amplitude signal at its grid, the low logic amplitude signal of its input side input low level current potential during described high logic amplitude signal is transfused to, generate described logic amplitude signal low level power low level current potential (Vss) and generate shake some signals in the low level current potential (Vss) of high level power supply of spoke signal of described high logic, from the low level current potential of its outgoing side output as low logic amplitude signal
Described high level output transistor, import described high logic amplitude signal at its grid, some signals in the high level current potential (Vhh) of the low logic amplitude signal of its input side input high level current potential during described high logic amplitude signal is transfused to and described low level power are from the high level current potential of its outgoing side output as low logic amplitude signal.
9. low voltage signal generator as claimed in claim 8 is characterized in that,
Described signal processing circuit is used to possess a plurality of pixel (PIX of rectangular configuration ...), many data signal line (SD being provided with at each row of described a plurality of pixels ...), multi-strip scanning signal wire (GL of being provided with at each row of described a plurality of pixels ...), drive described many data signal line (SD ...) data signal wire driving circuit (23) and drive described multi-strip scanning signal wire (GL ...) the image display device of scan signal line drive circuit (24)
The low logic amplitude signal of low level current potential is to represent that the work of described data signal wire driving circuit begins the beginning pulse signal (sp) in period during described high logic amplitude signal is transfused to,
The inversion signal (spb) that the low logic amplitude signal of high level current potential is described beginning pulse signal during described high logic amplitude signal is transfused to.
10. low voltage signal generator as claimed in claim 8 is characterized in that, each transistor in described a plurality of transistors is exported described low logic amplitude signal and inversion signal thereof.
11. low voltage signal generator as claimed in claim 6 is characterized in that, the silicon thin film transistor that described low voltage signal generator is made by polysilicon constitutes.
12. image display device, a plurality of pixel (PIX with rectangular configuration ...), many data signal line (SD being provided with at each row of described a plurality of pixels ...), multi-strip scanning signal wire (GL of being provided with at each row of described a plurality of pixels ...), drive described many data signal line (SD ...) data signal wire driving circuit (23) and drive described multi-strip scanning signal wire (GL ...) scan signal line drive circuit (24), it is characterized in that
Some driving circuits or two driving circuits in described data signal wire driving circuit (23) and the described scan signal line drive circuit (24) have
Adopt high logic amplitude signal carry out logical operation the 1st logical operation circuit (31,61),
Have load capacitance transmission system (33,63) and
The reduced voltage level walking circuit is low voltage signal generator (32,62);
Described reduced voltage level walking circuit is from the high logic amplitude signal of the 1st logical operation circuit (31,61) input, the high logic amplitude signal of input is transformed to the low logic amplitude signal of amplitude less than this high logic amplitude signal, and the low logic amplitude signal of conversion is exported to described transmission system (33,63).
13. image display device as claimed in claim 12, it is characterized in that, also have with described transmission system (33,63) and be connected, and the 2nd logical operation circuit (64) that adopts the described low logic amplitude signal imported by described transmission system (33,63) from described reduced voltage level walking circuit (32,62) to carry out logical operation.
14. image display device as claimed in claim 12 is characterized in that, also has
To be transformed to from the low logic amplitude signal of described transmission system (33,63) input the boost level walking circuit (34) exported behind the high logic amplitude signal of amplitude greater than this low logic amplitude signal and
The 2nd logical operation circuit (35) that the high logic amplitude signal that employing is imported from this boost level movable electrical appliances (34) carries out logical operation.
15. image display device as claimed in claim 14 is characterized in that,
The 1st logical operation circuit (31) is the clock model frequency dividing circuit (14a, 14b) with the clock signal frequency division,
The 2nd logical operation circuit (35) is the circuit (16a, 16b) of a plurality of shift register concatenation,
Connect described boost level walking circuit on each shift register.
16. image display device as claimed in claim 14 is characterized in that,
The 1st logical operation circuit (31) is the inversion clock signal circuit that generates the inversion clock signal from clock signal,
The 2nd logical operation circuit (35) is the circuit (16a, 16b) of a plurality of shift register concatenation,
Connect described boost level walking circuit on each shift register.
17. image display device as claimed in claim 14 is characterized in that,
It is the reduced voltage level walking circuit that described data signal wire driving circuit has described low voltage signal generator,
The 1st logical operation circuit (31) is the circuit of a plurality of shift register concatenation, is i.e. the 1st shift-register circuit (51) of circuit that determines the sequential of taking a sample to digital data,
The 2nd logical operation circuit (35) is the circuit of a plurality of shift register concatenation, is that decision is the 2nd shift-register circuit (55) to the circuit of the sequential of described data signal line output.
18. image display device as claimed in claim 12 is characterized in that, the silicon thin film transistor that at least the 1 logical operation circuit (31) is made by polysilicon constitutes.
CNB021200017A 2001-05-18 2002-05-17 Signal processing circuit, low voltage signal generator and picture display provided with them Expired - Fee Related CN100405446C (en)

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KR100541060B1 (en) 2006-01-10
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KR20020088400A (en) 2002-11-27
CN1387177A (en) 2002-12-25
US20020180722A1 (en) 2002-12-05
TWI231875B (en) 2005-05-01
JP2003037492A (en) 2003-02-07
US7978169B2 (en) 2011-07-12
KR100687640B1 (en) 2007-02-27
US7358950B2 (en) 2008-04-15
JP3916986B2 (en) 2007-05-23
US20080150924A1 (en) 2008-06-26
KR100742671B1 (en) 2007-07-25

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