CN100405073C - 防止半导体器件中大电流损伤的电容器击穿测试结构 - Google Patents
防止半导体器件中大电流损伤的电容器击穿测试结构 Download PDFInfo
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- CN100405073C CN100405073C CNB2004100934686A CN200410093468A CN100405073C CN 100405073 C CN100405073 C CN 100405073C CN B2004100934686 A CNB2004100934686 A CN B2004100934686A CN 200410093468 A CN200410093468 A CN 200410093468A CN 100405073 C CN100405073 C CN 100405073C
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CNB2004100934686A CN100405073C (zh) | 2004-12-22 | 2004-12-22 | 防止半导体器件中大电流损伤的电容器击穿测试结构 |
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CNB2004100934686A CN100405073C (zh) | 2004-12-22 | 2004-12-22 | 防止半导体器件中大电流损伤的电容器击穿测试结构 |
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CN1797017A CN1797017A (zh) | 2006-07-05 |
CN100405073C true CN100405073C (zh) | 2008-07-23 |
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CNB2004100934686A Expired - Fee Related CN100405073C (zh) | 2004-12-22 | 2004-12-22 | 防止半导体器件中大电流损伤的电容器击穿测试结构 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101387681B (zh) * | 2008-11-05 | 2011-04-06 | 南通海立电子有限公司 | 一种检测大容量电容器隐性击穿的装置 |
CN103018500A (zh) * | 2012-11-29 | 2013-04-03 | 上海华力微电子有限公司 | 防止半自动探针台探针烧针的装置 |
CN104142459B (zh) * | 2013-05-09 | 2017-07-14 | 中芯国际集成电路制造(上海)有限公司 | 半导体检测电路及检测方法 |
CN103337468A (zh) * | 2013-06-27 | 2013-10-02 | 上海华力微电子有限公司 | 测试结构 |
CN103869111B (zh) * | 2014-02-21 | 2016-08-17 | 上海华力微电子有限公司 | 一种通用型针座及其使用方法 |
CN106124961A (zh) * | 2016-09-19 | 2016-11-16 | 武汉新芯集成电路制造有限公司 | 一种测试结构 |
CN112327120B (zh) * | 2021-01-06 | 2021-07-23 | 乐清海创智能科技有限公司 | 一种电容器耐击穿检测系统 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60185174A (ja) * | 1984-03-05 | 1985-09-20 | Hitachi Ltd | 絶縁体膜の評価方法 |
JPS6279375A (ja) * | 1985-10-02 | 1987-04-11 | Seiko Instr & Electronics Ltd | 絶縁膜の評価方法 |
JPS63124437A (ja) * | 1986-11-14 | 1988-05-27 | Hitachi Ltd | 半導体素子用絶縁体薄膜の評価装置 |
US4823088A (en) * | 1986-05-09 | 1989-04-18 | Oki Electric Industry Co., Ltd. | Method of and apparatus for testing semiconductor device for electrostatic discharge damage |
JP2000269290A (ja) * | 1999-03-18 | 2000-09-29 | Toshiba Corp | テスト構造およびそれを用いた評価方法 |
US20020033710A1 (en) * | 1998-08-31 | 2002-03-21 | Lg Semicon Co., Ltd. | TDDB test pattern and method for testing TDDB of MOS capacitor dielectric |
CN1588102A (zh) * | 2004-08-19 | 2005-03-02 | 信息产业部电子第五研究所 | 在高温恒定电场中与时间有关的介质击穿试验方法 |
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2004
- 2004-12-22 CN CNB2004100934686A patent/CN100405073C/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60185174A (ja) * | 1984-03-05 | 1985-09-20 | Hitachi Ltd | 絶縁体膜の評価方法 |
JPS6279375A (ja) * | 1985-10-02 | 1987-04-11 | Seiko Instr & Electronics Ltd | 絶縁膜の評価方法 |
US4823088A (en) * | 1986-05-09 | 1989-04-18 | Oki Electric Industry Co., Ltd. | Method of and apparatus for testing semiconductor device for electrostatic discharge damage |
JPS63124437A (ja) * | 1986-11-14 | 1988-05-27 | Hitachi Ltd | 半導体素子用絶縁体薄膜の評価装置 |
US20020033710A1 (en) * | 1998-08-31 | 2002-03-21 | Lg Semicon Co., Ltd. | TDDB test pattern and method for testing TDDB of MOS capacitor dielectric |
JP2000269290A (ja) * | 1999-03-18 | 2000-09-29 | Toshiba Corp | テスト構造およびそれを用いた評価方法 |
CN1588102A (zh) * | 2004-08-19 | 2005-03-02 | 信息产业部电子第五研究所 | 在高温恒定电场中与时间有关的介质击穿试验方法 |
Non-Patent Citations (6)
Title |
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3.4mm超薄SiO2栅介质的特性. 许晓燕,谭静荣,高文钰,黄如,田大宇,张兴.电子学报,第30卷第2期. 2002 |
3.4mm超薄SiO2栅介质的特性. 许晓燕,谭静荣,高文钰,黄如,田大宇,张兴.电子学报,第30卷第2期. 2002 * |
脉冲和直流应力下栅氧化膜击穿特性的差别. 范焕章,王刚宁,张蓓蓉,贺德洪,桂力敏.华东师范大学学报(自然科学版),第1998年卷第1期. 1998 |
脉冲和直流应力下栅氧化膜击穿特性的差别. 范焕章,王刚宁,张蓓蓉,贺德洪,桂力敏.华东师范大学学报(自然科学版),第1998年卷第1期. 1998 * |
高温恒定电场栅氧化层TDDB寿命测试方法研究. 王涛,李斌,罗宏伟.电子产品可靠性与环境试验,第2004年卷第2期. 2004 |
高温恒定电场栅氧化层TDDB寿命测试方法研究. 王涛,李斌,罗宏伟.电子产品可靠性与环境试验,第2004年卷第2期. 2004 * |
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CN1797017A (zh) | 2006-07-05 |
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