CN100392884C - Light-emitting diode and its producing method - Google Patents
Light-emitting diode and its producing method Download PDFInfo
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- CN100392884C CN100392884C CNB2005100886719A CN200510088671A CN100392884C CN 100392884 C CN100392884 C CN 100392884C CN B2005100886719 A CNB2005100886719 A CN B2005100886719A CN 200510088671 A CN200510088671 A CN 200510088671A CN 100392884 C CN100392884 C CN 100392884C
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Abstract
The invention relates to a light-emitting diode, and relative production, wherein said light-emitting diode comprises a base board, the first doping semi-conductor layer, a lighting layer, the second doping semi-conductor layer, the first dielectric layer, the first conductive plug, the first electrode and the second electrode; the first doping semi-conductor layer is above the base board; the lighting layer and the second doping semi-conductor layer are above part of the first doping semi-conductor layer; the first dielectric layer is above part of first doping semi-conductor layer that not covered by lighting layer; the first electrode on the first dielectric layer is connected to the first doping semi-conductor layer via the first conductive plug of first dielectric layer; and the second electrode is connected to the second doping semi-conductor layer.
Description
Technical field
The present invention relates to a kind of light-emitting component and manufacture method thereof, and particularly relate to a kind of light-emitting diode and manufacture method thereof.
Background technology
Because light-emitting diode and conventional bulb relatively have absolute advantage, for example volume is little, life-span is long, low-voltage/current drives, be difficult for breaking, there is not significant heat problem when luminous, do not contain mercury (not having pollution problem), the good characteristics such as (power savings) of luminous efficiency, and the luminous efficiency of light-emitting diode improved constantly in recent years, therefore light-emitting diode replaces fluorescent lamp and self-heating bulb gradually in some field, for example needs the scanner lamp source of reaction at a high speed, the Dashboard illumination of Backlight For Liquid Crystal Display Panels or front light-source automobile, traffic lights and general lighting device etc.
And because nitrogenous III-V compounds of group is the material of broadband energy gap, its emission wavelength can be contained to ruddiness from ultraviolet light always, can say so and almost contain the wave band of whole visible light.Therefore, utilize the compound semiconductor of nitrogen gallium, be widely used in the various light emitting modules as the light-emitting diode of gallium nitride (GaN), aluminium gallium nitride alloy (GaAlN), InGaN (GaInN) etc.
Fig. 1 is the generalized section of known light-emitting diode.Please refer to Fig. 1, light-emitting diode 100 is made of substrate 110, n type doping semiconductor layer 120, electrode 122, luminescent layer 130, p type doping semiconductor layer 140, transparency conducting layer 150 and electrode 142.Wherein, n type doping semiconductor layer 120, luminescent layer 130, p type doping semiconductor layer 140, transparency conducting layer 150 and electrode 142 are to be set in turn on the substrate 110, and luminescent layer 130 only covers the n type doping semiconductor layer 120 of part, and electrode 122 promptly is arranged on not on the n type doping semiconductor layer 120 that is covered by luminescent layer 130.
Please continue with reference to Fig. 1, the light-emitting area of light-emitting diode 100 mainly is the area that depends on luminescent layer 130, that is to say, the area of luminescent layer 130 is bigger, and the light-emitting area of light-emitting diode 100 is also just big.But because luminescent layer 130 all is arranged on the n type doping semiconductor layer 120 with electrode 122, therefore increase the area of luminescent layer 130, just must dwindle the area of electrode 122 as desire.Yet,, will increase the difficulty of follow-up lead-in wire bonding (wire bonding) technology, and then influence the manufacturing qualification rate of light-emitting diode 100 if the area of electrode 122 is too small.
Summary of the invention
In view of the foregoing, purpose of the present invention just provides a kind of light-emitting diode, and it can have large-area luminescent layer and electrode simultaneously, increasing the light-emitting area of this light-emitting diode, and improves the qualification rate of the lead key closing process of this light-emitting diode.
Another object of the present invention provides a kind of manufacturing method for LED, and it can increase the light-emitting area of light-emitting diode under the situation of the qualification rate that does not reduce follow-up lead key closing process.
The present invention proposes a kind of light emitting diode construction, comprises substrate, the first type doping semiconductor layer, luminescent layer, the second type doping semiconductor layer, first dielectric layer, first conductive plunger, first electrode and second electrode.Wherein, the first type doping semiconductor layer is to be arranged on the substrate, and luminescent layer and the second type doping semiconductor layer are to be set in turn on the part first type doping semiconductor layer.First dielectric layer is to be arranged at not on the part first type doping semiconductor layer that is covered by luminescent layer, and first electrode that is arranged on first dielectric layer is to be electrically connected on the first type doping semiconductor layer by first conductive plunger that is arranged in first dielectric layer.In addition, second electrode then is to be electrically connected on the second type doping semiconductor layer.
In preferred embodiment of the present invention, above-mentioned light-emitting diode can also comprise second dielectric layer, and it is to be arranged on the part second type doping semiconductor layer.In one example, above-mentioned light-emitting diode can also comprise second conductive plunger, and it is arranged in second dielectric layer.And second electrode is arranged on second dielectric layer, and is electrically connected with the second type doping semiconductor layer by this second conductive plunger.
In preferred embodiment of the present invention, above-mentioned light-emitting diode can also comprise transparency conducting layer, is arranged between the above-mentioned second type doping semiconductor layer and second electrode.
In preferred embodiment of the present invention, the material of the above-mentioned first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer comprises the III-V group iii v compound semiconductor material.For instance, the material of the first type doping semiconductor layer, luminescent layer and the second type doping semiconductor layer for example is gallium nitride, gallium phosphide or gallium arsenide phosphide.
In preferred embodiment of the present invention, the above-mentioned first type doped semiconductor for example is a n type doping semiconductor layer, and the second type doping semiconductor layer for example is a p type doping semiconductor layer.Certainly, in another embodiment, the first type doped semiconductor also can be a p type doping semiconductor layer, and the second type doping semiconductor layer then for example is a n type doping semiconductor layer.
In preferred embodiment of the present invention, the material of aforesaid substrate can be sapphire, carborundum, spinelle or silicon.
The present invention also proposes a kind of manufacturing method for LED, and the method is to form earlier the first type doping semiconductor layer, luminescent layer, the second type doping semiconductor layer and mask layer (masklayer) on substrate successively.Wherein, mask layer is to expose the part second type doping semiconductor layer.Then, be mask with the mask layer, remove the second type doping semiconductor layer and the luminescent layer below it that expose, to expose the part first type doping semiconductor layer.Then, on the mask layer and the first type doping semiconductor layer, form dielectric materials layer.Afterwards, remove part dielectric materials layer and mask layer, on not by the part first type doping semiconductor layer that luminescent layer covered, to form first dielectric layer.Then, in first dielectric layer, form first conductive plunger, to be electrically connected with the first type doping semiconductor layer.Then form first electrode and second electrode more respectively, wherein second electrode is to be electrically connected with the second type doping semiconductor layer, and first electrode is to be electrically connected with the first type doping semiconductor layer by first conductive plunger.
In preferred embodiment of the present invention, above-mentioned not by part second type doping semiconductor layer and the luminescent layer below it that mask layer covered, remove by being equipped with the anisotropy etching.
In preferred embodiment of the present invention, the method that removes above-mentioned mask layer and part dielectric materials layer for example is to form the patterning photoresist layer earlier on dielectric materials layer, and this patterning photoresist layer is to expose the part dielectric materials layer.Then, utilize this patterning photoresist layer to be mask, remove this dielectric materials layer, mask layer that this patterning photoresist layer is exposed successively.Afterwards, remove patterning photoresist layer and part dielectric materials layer.
In preferred embodiment of the present invention, the material of above-mentioned mask layer for example is a nickel, and it for example is to remove by wang aqueous solution.
In preferred embodiment of the present invention, the material of above-mentioned dielectric materials layer for example is a silicon dioxide, and it for example is to remove by hydrogen fluoride.
In preferred embodiment of the present invention, the above-mentioned method that removes patterning photoresist layer and part dielectric materials layer for example is earlier diaphragm to be adhered on the patterning photoresist layer, and then tear and get this diaphragm, so that patterning photoresist layer and part dielectric materials layer are torn off from substrate together with this diaphragm.
In preferred embodiment of the present invention, after forming this first dielectric layer and before forming first electrode and second electrode, second dielectric layer can also be formed, earlier on substrate with the cover part second type doping semiconductor layer.And then in second dielectric layer, form second conductive plunger, so that second electrode of follow-up formation passes through this second conductive plunger, and be electrically connected with the second type doping semiconductor layer.
In preferred embodiment of the present invention, after forming this first dielectric layer and before forming second electrode, also be included on the second type doping semiconductor layer and form transparency conducting layer.
The present invention is provided with first dielectric layer between first electrode of light-emitting diode and the first type doping semiconductor layer, so that first electrode is electrically connected with the first type doping semiconductor layer by first conductive plunger in first dielectric layer, and then reduce resistance between first electrode and the first type doping semiconductor layer, to improve the electrical characteristics of light-emitting diode.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Fig. 1 is the generalized section of known light-emitting diode.
Fig. 2 A to Fig. 2 F is the manufacturing process profile of light-emitting diode in the preferred embodiment of the present invention.
Fig. 3 A to Fig. 3 D is the flow process profile of the structure of formation Fig. 2 D.
Fig. 4 is the profile of the light-emitting diode of another embodiment of the present invention.
Fig. 5 is the profile of the light-emitting diode of another embodiment of the present invention.
The main element description of symbols
100,200,400,500: light-emitting diode
110,210: substrate
120:n type doping semiconductor layer
122,142: electrode
130,230: luminescent layer
140:p type doping semiconductor layer
150,290: transparency conducting layer
220: the first type doping semiconductor layers
240: the second type doping semiconductor layers
250: mask layer
260: dielectric materials layer
262: the first dielectric layers
264: the first conductive plungers
266: the second dielectric layers
268: the second conductive plungers
270: the patterning photoresist layer
272: diaphragm
282: the first electrodes
284: the second electrodes
Embodiment
Fig. 2 A to Fig. 2 F is the manufacturing process profile of light-emitting diode in the preferred embodiment of the present invention.Please refer to Fig. 2 A, at first on substrate 210, form the first type doping semiconductor layer 220, luminescent layer 230, the second type doping semiconductor layer 240 and mask layer 250 successively.Wherein, mask layer 250 is to expose the part second type doping semiconductor layer 240.
From the above, the material of substrate 210 for example is sapphire (sapphire), carborundum, spinelle or silicon.The material of the first type doping semiconductor layer 220, luminescent layer 230 and the second type doping semiconductor layer 240 for example is the III-V group iii v compound semiconductor material, and commonly used be gallium nitride, gallium phosphide or gallium arsenide phosphide.The first type doping semiconductor layer 220 of present embodiment for example is a n type doping semiconductor layer, and 240 of the second type doping semiconductor layers for example are p type doping semiconductor layers.But in other embodiments, the first type doping semiconductor layer 220 also can be a p type doping semiconductor layer, and the second type doping semiconductor layer 240 then is a n type doping semiconductor layer.In addition, the material of mask layer 250 for example is a nickel.
Please refer to Fig. 2 B, is mask with mask layer 250 then, removes the part second type doping semiconductor layer 240 and part luminescent layer 230, to expose the first type doping semiconductor layer 220 of part.In the present embodiment, it is the luminescent layer 230 that mode with anisotropic etching (anisotropic etching) removes the second type doping semiconductor layer 240 that mask layer 250 exposed and its below.For example, this anisotropic etching process for example is reactive ion etching (reaction ion etching, a RIE) technology.
Please follow C, on substrate 200, form dielectric materials layer 260, to cover the mask layer 250 and the first type doping semiconductor layer 220 with reference to Fig. 2.Wherein, the material of dielectric materials layer 260 for example is a silicon dioxide.Then, please refer to Fig. 2 D, remove the dielectric materials layer 260 of mask layer 250 and part, on 250 exposed portions of mask layer, the first type doping semiconductor layer 220, to form first dielectric layer 262.Below will describe the process that forms first dielectric layer 262 for example in detail, but it is not in order to limit the present invention.
Fig. 3 A to Fig. 3 D is the flow process profile of the structure of formation Fig. 2 D.Please refer to Fig. 3 A, present embodiment for example is to form patterning photoresist layer 270 earlier on dielectric materials layer 260, then utilizes patterning photoresist layer 270 for mask, removes the part dielectric materials layer 260 that patterning photoresist layer 270 is exposed.In this step, can carry out Wet-type etching (wetetching) by hydrogen fluoride (HF) solution, to remove in the present embodiment by silicon dioxide (SiO
2) dielectric materials layer 260 formed.Please refer to Fig. 3 B, after removing the dielectric materials layer 260 that exposes, then remove mask layer 250 again.In this step, it for example is to carry out Wet-type etching (wet etching) by chloroazotic acid (aqua regia) solution, to remove the mask layer of being made up of nickel in the present embodiment 250.
At last, remove patterning photoresist layer 270 and not etched part dielectric materials layer 260, on the first type doped semiconductor 220, to form first dielectric layer 262 of Fig. 2 D.It should be noted that it for example is to remove patterning photoresist layer 270 herein, and part dielectric materials layer 260 and patterning photoresist layer 270 are stripped from from substrate 210 in the lump in the mode of peeling off (lift-off).For instance, please refer to Fig. 3 C, present embodiment for example is earlier diaphragm 272 to be adhered on the patterning photoresist layer, and then shown in Fig. 3 D, diaphragm 272 is peeled off from substrate 210, so that patterning photoresist layer 270 is stripped from from substrate 210 together with this diaphragm 272 with part dielectric materials layer 260, to form the structure of Fig. 2 D.
Please refer to Fig. 2 E, after forming first dielectric layer 262, then in first dielectric layer 262, form first conductive plunger 264, to be electrically connected to the first type doping semiconductor layer 220.Wherein, first conductive plunger 264 for example is that mode with evaporation forms.Then, please refer to Fig. 2 F, form first electrode 282 and second electrode 284, wherein the material of first electrode 282 and second electrode 284 for example is that aluminium or other have the electric conducting material of high reflectance.At this, because first electrode 282 is to be formed on first dielectric layer 262, and by first conductive plunger 264 and being electrically connected with the first type doping semiconductor layer 220, therefore can have than known technology is better between first electrode 282 and the first type doping semiconductor layer 220 and electrically contact, and then improve the reliability (reliability) of first electrode 282.
What deserves to be mentioned is at this, shown in Fig. 2 F, form before second electrode 284, transparency conducting layer 290 can also be formed, to improve the conduction uniformity of electric current earlier at the first type doping semiconductor layer 220, luminescent layer 230 and the second type doping semiconductor layer 240 on the second type doping semiconductor layer 240.Wherein, the material of transparency conducting layer 290 for example be indium tin oxide (Indium Tin Oxide, ITO) or indium-zinc oxide (Indium Zinc Oxide, IZO).Second electrode 284 of present embodiment promptly is to be formed on the transparency conducting layer 290, and is electrically connected with the second type doping semiconductor layer 240 by transparency conducting layer 290.
Specifically, please refer to Fig. 4, in another embodiment of the present invention, can also be after forming first dielectric layer 262, and form before first conductive plunger 264, on substrate 210, form second dielectric layer 266, to cover first dielectric layer 262 and the second type doping semiconductor layer 240, when forming first conductive plunger 264, in second dielectric layer 266, form second conductive plunger 268 that is electrically connected with the second type doping semiconductor layer 240 in the lump then.Afterwards,, form first electrode 282 and second electrode 284, to be electrically connected to the first type doping semiconductor layer 220 and the second type doping semiconductor layer 240 respectively as the explanation of above-mentioned embodiment.First conductive plunger 264 that it should be noted that this embodiment is to run through first dielectric layer 262 to be electrically connected with the first type doping semiconductor layer 220 with second dielectric layer 266.
Please continue with reference to Fig. 4, because present embodiment is that first electrode 282 is arranged on second dielectric layer 266, therefore can under the prerequisite of the area that needn't dwindle first electrode 282, increase the area of luminescent layer 230, and then increase the light-emitting area of this light-emitting diode 400.And, if need to improve the qualification rate of follow-up lead key closing process in the actual process, also can not cause bad influence to the light-emitting area of light-emitting diode 400 by the area that increases by first electrode 282.In other words, light-emitting diode 400 can have the lead key closing process of big light-emitting area and high qualification rate simultaneously.
After forming first electrode 282 and second electrode 284, promptly roughly finish the manufacturing of light-emitting diode 200, follow-up other technology is then known by the person of ordinary skill in the field, repeats no more herein.
To be example below, describe light-emitting diode structure of the present invention in detail, so that the person of ordinary skill in the field understands characteristics of the present invention more with the light-emitting diode 200 of Fig. 2 F.
Please refer to Fig. 2 F, light-emitting diode 200 is made of substrate 210, the first type doping semiconductor layer 220, luminescent layer 230, the second type doping semiconductor layer 240, first dielectric layer 262, first conductive plunger 264, first electrode 282 and second electrode 284.Wherein, the first type doping semiconductor layer 220 is to be arranged on the substrate 210, and the luminescent layer 230 and the second type doping semiconductor layer 240 are to be set in turn on the part first type doping semiconductor layer 220, and 262 of first dielectric layers are to be arranged at not on the part first type doping semiconductor layer 220 that is covered by luminescent layer 230.
From the above, first electrode 282 that is arranged on first dielectric layer 262 is to be electrically connected on the first type doping semiconductor layer 220 by first conductive plunger 264 that is arranged in first dielectric layer 262.284 at second electrode is to be electrically connected on the second type doping semiconductor layer 240, and it for example is by being arranged at the transparency conducting layer 290 on the second type doping semiconductor layer 240, and is electrically connected with the second type doping semiconductor layer 240.At this,, therefore can reduce the resistance between first electrode 282 and the first type doping semiconductor layer 220 because first electrode 282 of light-emitting diode 200 is to be electrically connected on the first type doping semiconductor layer 220 by first conductive plunger 264.
What deserves to be mentioned is, in other embodiments of the invention, as shown in Figure 4, on first dielectric layer 262, also be provided with second dielectric layer 266, and first electrode 264 is to be arranged on second dielectric layer 266, and by running through first conductive plunger 264 of second dielectric layer 266 and first dielectric layer 262, and be electrically connected to the first type doping semiconductor layer 220.Perhaps, as shown in Figure 5, first dielectric layer 262 can be partly to cover the second type doping semiconductor layer 240.Thus, can increase the area at the predetermined set place of first electrode 282, and then under the prerequisite of not dwindling luminescent layer 230 areas, increase the area of first electrode 282, be beneficial to carry out follow-up lead key closing process.
Need be in this explanation be, first dielectric layer 262 of Fig. 4 and second dielectric layer 266 can be the explanations as above-mentioned embodiment, in different process, form respectively, but in other embodiments, first dielectric layer 262 is being made of same rete with in the technology with second dielectric layer 266, and the present invention is not limited this.
In addition, the person of ordinary skill in the field will be appreciated that, the manufacturing process of the light-emitting diode 500 of Fig. 5 for example is to form successively on substrate 210 earlier after the first type doping semiconductor layer 220, luminescent layer 230, the second type doping semiconductor layer 240 and the transparency conducting layer 290, form first dielectric layer 262 again, to cover the first type doping semiconductor layer 220 and the second type doping semiconductor layer 240 partly.Wherein, first dielectric layer 262 for example is with photoetching and etched mode and form.The technology of follow-up formation first conductive plunger 264, second conductive plunger 268, first electrode 282 and second electrode 284 is then same as the previously described embodiments to be repeated no more herein.
In sum, light-emitting diode of the present invention is between first electrode and the first type doping semiconductor layer first dielectric layer to be set, so that first electrode is electrically connected with the first type doping semiconductor layer by first conductive plunger in first dielectric layer, and then reduce resistance between first electrode and the first type doping semiconductor layer, to improve the electrical characteristics of light-emitting diode.
In addition, because first electrode of light-emitting diode of the present invention is not to be arranged on the first type doping semiconductor layer, therefore can under the prerequisite of not dwindling first electrode area, increases the area of luminescent layer, and then increase the light-emitting area of light-emitting diode.With another angle, the present invention also can increase the area of first electrode under the situation of not dwindling the luminescent layer area, and then improves the qualification rate of follow-up lead key closing process.
Generally speaking, with known technology by contrast, light-emitting diode of the present invention not only has bigger light-emitting area, and light-emitting diode of the present invention also can have bigger electrode area, thereby can reach the purpose that increases light-emitting area and improve the qualification rate of lead key closing process simultaneously.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and improvement, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (17)
1. light-emitting diode is characterized in that comprising:
Substrate;
The first type doping semiconductor layer is arranged on this substrate;
Luminescent layer is arranged on this first type doping semiconductor layer of part;
The second type doping semiconductor layer is arranged on this luminescent layer;
First dielectric layer is arranged at not by on this first type doping semiconductor layer of part that this luminescent layer covered;
First conductive plunger runs through this first dielectric layer and is electrically connected with this first type doping semiconductor layer;
First electrode is arranged on this first dielectric layer, to be electrically connected with this first type doping semiconductor layer by this first conductive plunger; And
Second electrode is electrically connected on this second type doping semiconductor layer.
2. light-emitting diode according to claim 1 is characterized in that also comprising second dielectric layer, is arranged on this second type doping semiconductor layer of part.
3. light-emitting diode according to claim 2, it is characterized in that also comprising second conductive plunger, be arranged in this second dielectric layer, and this second electrode is to be arranged on this second dielectric layer, and is electrically connected with this second type doping semiconductor layer by this second conductive plunger.
4. light-emitting diode according to claim 1 is characterized in that also comprising transparency conducting layer, is arranged between this second type doping semiconductor layer and this second electrode.
5. light-emitting diode according to claim 1 is characterized in that the material of this first type doping semiconductor layer, this luminescent layer and this second type doping semiconductor layer comprises the III-V group iii v compound semiconductor material.
6. light-emitting diode according to claim 5 is characterized in that this III-V group iii v compound semiconductor material comprises gallium nitride, gallium phosphide or gallium arsenide phosphide.
7. light-emitting diode according to claim 1 it is characterized in that this first type doping semiconductor layer is a n type doping semiconductor layer, and this second type doping semiconductor layer is a p type doping semiconductor layer.
8. light-emitting diode according to claim 1 it is characterized in that this first type doping semiconductor layer is a p type doping semiconductor layer, and this second type doping semiconductor layer is a n type doping semiconductor layer.
9. light-emitting diode according to claim 1 is characterized in that this substrate comprises sapphire, carborundum, spinelle or silicon substrate.
10. manufacturing method for LED is characterized in that comprising:
Form the first type doping semiconductor layer, luminescent layer, second type doping semiconductor layer and the mask layer on substrate successively, wherein this mask layer exposes this second type doping semiconductor layer of part;
With this mask layer is mask, removes this second type doping semiconductor layer and this luminescent layer of part of exposing, to expose this first type doping semiconductor layer of part;
On this mask layer and this first type doping semiconductor layer, form dielectric materials layer;
Remove this mask layer and this dielectric materials layer of part, on not by this first type doping semiconductor layer of part that this luminescent layer covered, to form first dielectric layer;
In this first dielectric layer, form first conductive plunger, to be electrically connected with this first type doping semiconductor layer; And
Form first electrode and second electrode respectively, wherein this second electrode is to be electrically connected with this second type doping semiconductor layer, and this first electrode is to be electrically connected with this first type doping semiconductor layer by this first conductive plunger.
11. manufacturing method for LED according to claim 10 is characterized in that this second type doping semiconductor layer of part and this luminescent layer of part remove by anisotropic etching.
12. manufacturing method for LED according to claim 10 is characterized in that the method that removes this mask layer and this dielectric materials layer of part comprises:
On this dielectric materials layer, form the patterning photoresist layer;
Utilize this patterning photoresist layer to be mask, remove this patterning photoresist layer institute this dielectric materials layer of exposed portions;
Utilize this patterning photoresist layer to be mask, remove this mask layer; And
Remove this patterning photoresist layer and this dielectric materials layer of part.
13. manufacturing method for LED according to claim 12, the material that it is characterized in that this mask layer is a nickel, and this mask layer is to remove by wang aqueous solution.
14. manufacturing method for LED according to claim 12, the material that it is characterized in that this dielectric materials layer is a silicon dioxide, and this dielectric materials layer is to remove by hydrogen fluoride.
15. manufacturing method for LED according to claim 12 is characterized in that the method that removes this patterning photoresist layer and this dielectric materials layer of part comprises:
Diaphragm is adhered on this patterning photoresist layer; And
Peel off this diaphragm, so that this patterning photoresist layer is stripped from from this substrate together with this diaphragm with this dielectric materials layer of part.
16. manufacturing method for LED according to claim 10 is characterized in that after forming this first dielectric layer and before forming this first electrode and this second electrode, also comprises:
On this substrate, form second dielectric layer, with this second type doping semiconductor layer of cover part; And
In this second dielectric layer, form second conductive plunger,, and be electrically connected with this second type doping semiconductor layer so that this of follow-up formation second electrode passes through this second conductive plunger.
17. manufacturing method for LED according to claim 10 is characterized in that after forming this first dielectric layer and before forming this second electrode, also is included on this second type doping semiconductor layer and forms transparency conducting layer.
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| CNB2005100886719A CN100392884C (en) | 2005-08-01 | 2005-08-01 | Light-emitting diode and its producing method |
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| CN101859836B (en) * | 2009-04-07 | 2014-05-28 | 江苏璨扬光电有限公司 | Light-conducting type light-emitting diode and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639165A (en) * | 1986-06-30 | 1988-01-14 | Matsushita Electric Ind Co Ltd | Light-emitting diode |
| JPH05175546A (en) * | 1991-12-24 | 1993-07-13 | Kyocera Corp | Semiconductor light emitting element |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS639165A (en) * | 1986-06-30 | 1988-01-14 | Matsushita Electric Ind Co Ltd | Light-emitting diode |
| JPH05175546A (en) * | 1991-12-24 | 1993-07-13 | Kyocera Corp | Semiconductor light emitting element |
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Effective date of registration: 20091218 Address after: No. 99 Longyuan Road, Longtan science and Technology Industrial Zone, Longtan Township, Taoyuan County, Taiwan Co-patentee after: LUMENS Limited by Share Ltd Patentee after: Bright circle Au Optronics Co Address before: Longtan County, Taoyuan County, Taiwan province Longtan science and Technology Industrial Park, No. 99, Dragon Garden Road Patentee before: Formosa Epitaxy Incorporation |